JPH0284359U - - Google Patents
Info
- Publication number
- JPH0284359U JPH0284359U JP16411988U JP16411988U JPH0284359U JP H0284359 U JPH0284359 U JP H0284359U JP 16411988 U JP16411988 U JP 16411988U JP 16411988 U JP16411988 U JP 16411988U JP H0284359 U JPH0284359 U JP H0284359U
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- lead portion
- supplies
- desired current
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
第１図は、本考案に係るレーザダイオードユニ
ツトの好適な実施例を示す全体概略図、第２図は
、第１図における―線断面図、第３図は、従
来のレーザダイオードユニツトの概略図である。
１……レーザダイオードユニツト、２……Ｐ―
Ｎ接合領域、３……基台（フオトダイオード）、
５……レーザダイオード、９……基板、９Ｃ……
絶縁膜、１１……リード部（第１のリード部）、
１３……リード部（第２のリード部）、１５……
リード部、２３……保護カバー、２５……反射部
、２５Ａ……テーパ面、２６……保護膜。
Fig. 1 is an overall schematic diagram showing a preferred embodiment of a laser diode unit according to the present invention, Fig. 2 is a sectional view taken along the line - - in Fig. 1, and Fig. 3 is a schematic diagram of a conventional laser diode unit. It is. 1...Laser diode unit, 2...P-
N junction region, 3...base (photodiode),
5...Laser diode, 9...Substrate, 9C...
Insulating film, 11... lead part (first lead part),
13...Lead part (second lead part), 15...
Lead part, 23...protective cover, 25...reflection part, 25A...tapered surface, 26...protective film.
Claims (1)
が設けられるレーザダイオードユニツトであつて
、 前記サブマウント用基台の厚さ方向一側面には
、レーザダイオードと、当該レーザダイオードの
レーザ光を受光するフオトダイオードとが各々配
設され、 前記基板には、前記レーザダイオードに所望の
電流を供給する第１のリード部と、前記フオトダ
イオードから出力される電流を取り出す第２のリ
ード部とが設けられるとともに、 前記レーザダイオードおよび前記フオトダイオ
ードが保護膜によつて被覆された、 ことを特徴とするレーザダイオードユニツト。[Claims for Utility Model Registration] A laser diode unit in which a submount base is provided on one side in the thickness direction of a substrate, wherein a laser diode and a submount base are provided on one side in the thickness direction of the submount base. , and a photodiode that receives the laser light from the laser diode, and the substrate includes a first lead portion that supplies a desired current to the laser diode, and a first lead portion that supplies a desired current to the laser diode, and a first lead portion that supplies a desired current to the laser diode, and a first lead portion that supplies a desired current to the laser diode. A laser diode unit, further comprising: a second lead portion for taking out the laser diode, and the laser diode and the photodiode are covered with a protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16411988U JPH0284359U (en) | 1988-12-19 | 1988-12-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16411988U JPH0284359U (en) | 1988-12-19 | 1988-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0284359U true JPH0284359U (en) | 1990-06-29 |
Family
ID=31449448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16411988U Pending JPH0284359U (en) | 1988-12-19 | 1988-12-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0284359U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160189A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Semiconductor luminous device incorporated with photodetector |
| JPS63278289A (en) * | 1987-03-30 | 1988-11-15 | Hitachi Ltd | semiconductor light emitting device |
-
1988
- 1988-12-19 JP JP16411988U patent/JPH0284359U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160189A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Semiconductor luminous device incorporated with photodetector |
| JPS63278289A (en) * | 1987-03-30 | 1988-11-15 | Hitachi Ltd | semiconductor light emitting device |