[go: up one dir, main page]

JPH0274054A - Sealing method of semiconductor device - Google Patents

Sealing method of semiconductor device

Info

Publication number
JPH0274054A
JPH0274054A JP22575888A JP22575888A JPH0274054A JP H0274054 A JPH0274054 A JP H0274054A JP 22575888 A JP22575888 A JP 22575888A JP 22575888 A JP22575888 A JP 22575888A JP H0274054 A JPH0274054 A JP H0274054A
Authority
JP
Japan
Prior art keywords
metal
metal ring
pulse current
metal cap
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22575888A
Other languages
Japanese (ja)
Inventor
Mitsuo Sugimoto
杉本 三男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP22575888A priority Critical patent/JPH0274054A/en
Publication of JPH0274054A publication Critical patent/JPH0274054A/en
Pending legal-status Critical Current

Links

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve a power efficiency and a sealing property by a method wherein a pulse current is applied directly between a metal cap and a metal ring when they are electrically welded to each other. CONSTITUTION:An IC is mounted on a ceramic substrate 4 to which a metal ring 3 has been fixed and a metal cap 2 is put on the metal ring 3. Roller electrodes 1 are provided pressing the metal cap 2, a pulse current source 5 is connected between the roller electrodes 1 and the metal ring 3, and a pulse current is made to flow. When the wiring has taken place as mentioned above, the pulse current is made to flow from an electrode of the pulse current source 5 to the other electrode via the roller electrodes 1, the metal cap 2, and the metal ring 3, so that an invalid electrode is eliminated. By this setup, a power efficiency and a sealing property can be improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の封止方法に関し、特にセラミック
パッケージICの金属キャップ封止方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for sealing a semiconductor device, and more particularly to a method for sealing a metal cap of a ceramic package IC.

〔従来の技術〕[Conventional technology]

従来、この種の半導体装置の封止方法は、第2図に示す
とおり、メタルリング3が固着されたセラミック基板4
にICを装着しメタルリング3上に金属キャップ2を置
き、一対のローラを極1でメタルリング3上の金属キャ
ップ2を押え、そのローラ電極間にパルス電流を印加し
てメタルリング3と金属キャップ2を溶接し封止してい
た。
Conventionally, as shown in FIG. 2, a method for sealing a semiconductor device of this type involves a ceramic substrate 4 to which a metal ring 3 is fixed.
Mount the IC on the metal ring 3, place the metal cap 2 on the metal ring 3, press the metal cap 2 on the metal ring 3 with the pole 1 of a pair of rollers, and apply a pulse current between the roller electrodes to connect the metal ring 3 and the metal cap. Cap 2 was welded and sealed.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置の封止方法は、パルス電流を
ローラ電極間に印加していることより、その電流経路は
一方のローラ電極から金属キャップ2とメタルリング3
を通り、再び金属キャップを通りもう一方のローラ電極
へ流れる有効電流と、一方のローラ電極から金属キャッ
プ2のみを通りもう一方のローラ電極へ流れる無効電流
とに分流されるので、無効電流による電力効率源及び封
止性の低下という欠点がある。
In the conventional semiconductor device sealing method described above, a pulse current is applied between the roller electrodes, so that the current path is from one roller electrode to the metal cap 2 and the metal ring 3.
, the active current flows through the metal cap 2 again to the other roller electrode, and the reactive current flows from one roller electrode through only the metal cap 2 to the other roller electrode, so the power due to the reactive current There are disadvantages of reduced efficiency and sealing properties.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、半導体装置を装着したセラミックパッケージ
の金属キャップ封止において、金属キャップをパッケー
ジのメタルリングに電気溶接する際のパルス電流を直接
金属キャップとメタルリング間に流すことを特徴とする
The present invention is characterized in that in sealing a ceramic package equipped with a semiconductor device with a metal cap, a pulsed current for electrically welding the metal cap to a metal ring of the package is directly passed between the metal cap and the metal ring.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示す図である。メタルリン
グ3が固着されたセラミック基板4にICを装着しメタ
ルリング3上に金属キャップ2をかぶせる。ローラ電極
1を金属キャップ2を押えるように設置し、パルス電流
電源5をローラ電極1とメタルリング3との間に接続し
てパルス電流を流す。このように結線すると、パルス電
流はパルス電流電源5の一方の電極からローラ電11.
金属キャップ2.メタルリング3を通りパルス電流電源
5の他方の電極へと流れるので無効電流はなくなる。
FIG. 1 is a diagram showing an embodiment of the present invention. An IC is mounted on a ceramic substrate 4 to which a metal ring 3 is fixed, and a metal cap 2 is placed over the metal ring 3. A roller electrode 1 is installed so as to press a metal cap 2, and a pulse current power source 5 is connected between the roller electrode 1 and the metal ring 3 to apply a pulse current. By connecting the wires in this manner, a pulse current is transmitted from one electrode of the pulse current power source 5 to the roller electrode 11.
Metal cap 2. Since the current flows through the metal ring 3 to the other electrode of the pulsed current power source 5, there is no reactive current.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、パルス電流をセラミック
パッケージの金属キャップとメタルリング間に印加する
ことにより電力効率が上がり封止性を向上できる効果が
ある。
As described above, the present invention has the effect of increasing power efficiency and improving sealing performance by applying a pulsed current between the metal cap and metal ring of a ceramic package.

【図面の簡単な説明】 第1図は本発明の半導体装置の封止方法を説明する図、
第2図は従来の封止方法の説明図である。 1・・・ローラ電極、2・・・金属キャップ、3・・・
メタルリング、4・・・セラミック基板、5・・・パル
ス電流電源。
[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a diagram illustrating the method for sealing a semiconductor device of the present invention;
FIG. 2 is an explanatory diagram of a conventional sealing method. 1... Roller electrode, 2... Metal cap, 3...
Metal ring, 4... Ceramic substrate, 5... Pulse current power supply.

Claims (1)

【特許請求の範囲】[Claims] 半導体装置を装着したセラミックパッケージの金属キャ
ップ封止において、金属キャップをパッケージのメタル
リングに電気溶接する際のパルス電流を直接金属キャッ
プとメタルリング間に印加することを特徴とする半導体
装置の封止方法。
Sealing of a semiconductor device characterized by applying a pulsed current directly between the metal cap and the metal ring when electrically welding the metal cap to the metal ring of the package in metal cap sealing of a ceramic package equipped with a semiconductor device. Method.
JP22575888A 1988-09-09 1988-09-09 Sealing method of semiconductor device Pending JPH0274054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22575888A JPH0274054A (en) 1988-09-09 1988-09-09 Sealing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22575888A JPH0274054A (en) 1988-09-09 1988-09-09 Sealing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0274054A true JPH0274054A (en) 1990-03-14

Family

ID=16834355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22575888A Pending JPH0274054A (en) 1988-09-09 1988-09-09 Sealing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0274054A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102837136A (en) * 2012-09-11 2012-12-26 陕西华经微电子股份有限公司 Parallel seam welding process and apparatus of special-shaped structure packaging housing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421169A (en) * 1977-07-18 1979-02-17 Nec Corp Package for semiconductor
JPS5474374A (en) * 1977-11-26 1979-06-14 Nec Corp Sealing method for semiconductor container
JPS5477572A (en) * 1977-12-02 1979-06-21 Nec Corp Hermetic sealing method of package for semiconductor devices
JPS54155767A (en) * 1978-05-29 1979-12-08 Nec Corp Semiconductor device
JPS6230352A (en) * 1985-07-31 1987-02-09 Nec Corp Package for semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421169A (en) * 1977-07-18 1979-02-17 Nec Corp Package for semiconductor
JPS5474374A (en) * 1977-11-26 1979-06-14 Nec Corp Sealing method for semiconductor container
JPS5477572A (en) * 1977-12-02 1979-06-21 Nec Corp Hermetic sealing method of package for semiconductor devices
JPS54155767A (en) * 1978-05-29 1979-12-08 Nec Corp Semiconductor device
JPS6230352A (en) * 1985-07-31 1987-02-09 Nec Corp Package for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102837136A (en) * 2012-09-11 2012-12-26 陕西华经微电子股份有限公司 Parallel seam welding process and apparatus of special-shaped structure packaging housing

Similar Documents

Publication Publication Date Title
JPH0274054A (en) Sealing method of semiconductor device
CN207075047U (en) A kind of camera
JPH0252425B2 (en)
JP2515923B2 (en) Method for sealing semiconductor device
JPH01321664A (en) Resin sealed semiconductor device
JPS61237441A (en) Wire bonding method
JPH01257361A (en) Resin-sealed semiconductor device
JPS63305604A (en) Piezoelectric oscillator
JPS57166052A (en) Semiconductor device
JPH0138373B2 (en)
JPS6230352A (en) Package for semiconductor device
JPH01273343A (en) Lead frame
JPH0358450A (en) Ceramic package of semiconductor device
JPS61237442A (en) Wire bonding method
JPH02153555A (en) Hermetically sealed type semiconductor device
JPH03129840A (en) Resin-sealed semiconductor device
JPS5748253A (en) Lead frame for semiconductor device
JPH01187954A (en) Resin seal type semiconductor device
JPS6412560A (en) Semiconductor device
JPS57162451A (en) Semiconductor device
JPH10290140A (en) Surface acoustic wave device
JPS63122252A (en) Package for semiconductor device
JPH01110767A (en) Solid-state image pickup device
JPS55148449A (en) Semiconductor device
JPH0362564A (en) Semiconductor device