JPH0261073A - Electroless tin plating bath and electroless tin plating method - Google Patents
Electroless tin plating bath and electroless tin plating methodInfo
- Publication number
- JPH0261073A JPH0261073A JP21184788A JP21184788A JPH0261073A JP H0261073 A JPH0261073 A JP H0261073A JP 21184788 A JP21184788 A JP 21184788A JP 21184788 A JP21184788 A JP 21184788A JP H0261073 A JPH0261073 A JP H0261073A
- Authority
- JP
- Japan
- Prior art keywords
- tin plating
- acid
- salt
- acids
- electroless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は酸性の無電解錫めっき浴及び無電解錫めっき方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an acidic electroless tin plating bath and an electroless tin plating method.
〔従来の技術及び発明が解決しようとする課題〕従来よ
り、電子部品等に半田付は性などの点から無電解錫めっ
きを施すことが行われているが、この場合電子部品等の
めっき不要箇所をマスキングし、必要箇所のみをめっき
する部分めっきがなされることが多い。かかる部分めっ
きを行なう場合、特に電子部品のめっきにおいてはマス
キング精度が強く要求され、これに対応して種々のマス
キング剤、マスキング方法が開発されているが、一般に
マスキング剤はアルカリ性に弱く、アルカリ性のめっき
浴でめっきを行なうとマスキング膜が剥離を起こすこと
があり、また電子部品等の素材が多様化していることに
より、耐アルカリ性の悪い素材も増え、このためかかる
部分めっき用のめっき浴として酸性タイプのものが望ま
れている。[Prior art and problems to be solved by the invention] Conventionally, electroless tin plating has been applied to electronic parts etc. from the viewpoint of soldering properties, etc., but in this case, plating of electronic parts etc. is unnecessary. Partial plating is often done by masking the area and plating only the necessary areas. When performing such partial plating, especially when plating electronic components, masking accuracy is strongly required, and various masking agents and masking methods have been developed in response to this, but in general, masking agents are sensitive to alkalinity and If plating is performed in a plating bath, the masking film may peel off, and as the materials used for electronic components become more diverse, the number of materials with poor alkali resistance is increasing, so acidic plating baths are used for such partial plating. type is desired.
従来、酸性の無電解錫めっき浴としては、塩化浴、硫酸
浴などが知られているが、これらの浴から得られる錫析
出物はその粒子が比較的粗く、また析出速度も遅いとい
う問題があり、従って微細で緻密な粒子の無電解錫めっ
き皮膜を与える酸性タイプのめっき浴が要求される。Conventionally, chloride baths, sulfuric acid baths, etc. are known as acidic electroless tin plating baths, but the problem is that the tin precipitates obtained from these baths have relatively coarse particles and the precipitation rate is slow. Therefore, an acidic type plating bath that provides an electroless tin plating film with fine and dense particles is required.
なお従来、アルカリ性の無電解錫めっき浴として、有機
スルホン酸類を3価のチタンイオンと共に用いた浴が知
られている(特公昭59−34229号公報)が、この
ようなアルカリ性の無電解錫めっき浴は上述したように
耐アルカリ性の弱いマスキング剤を用いた部分めっき、
耐アルカリ性の弱い素材に対しては適用し難い。Conventionally, a bath using organic sulfonic acids together with trivalent titanium ions has been known as an alkaline electroless tin plating bath (Japanese Patent Publication No. 34229/1983); As mentioned above, the bath is selective plating using a masking agent with weak alkali resistance.
It is difficult to apply to materials with weak alkali resistance.
本発明は、上記事情に鑑みなされたもので、均一で微細
な粒子の錫析出物を与え、かつ良好な析出速度を有する
酸性の無電解錫めっき浴及び該無電解錫めっき浴を用い
た無電解錫めっき方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and includes an acidic electroless tin plating bath that provides tin precipitates of uniform and fine particles and has a good deposition rate, and a tin plating bath using the electroless tin plating bath. The purpose is to provide an electrolytic tin plating method.
〔課題を解決するための手段及び作用〕本発明者らは、
上記目的を達成するため種々検討を行なった結果、酸と
して置換又は未置換のアルカンスルホン酸、ヒドロキシ
アルカンスルホン酸、ベンゼンスルホン酸及びナフタレ
ンスルホン酸から選ばれる1種以上の有機スルホン酸を
使用すると共に、2価−の錫塩としてこれら有機スルホ
ン酸の塩を使用し、かつチオ尿素を添加し、更にこれら
の成分を含む浴に水溶性ジルコニウム塩を添加すること
により、この浴から析出した錫皮膜は粒子が均一かつ微
細で、外観の良好な緻密な析出状態を有し、しかも析出
速度も比較的良好であることを見い出し、本発明をなす
に至ったものである。[Means and effects for solving the problem] The present inventors,
As a result of various studies to achieve the above objective, we have found that one or more organic sulfonic acids selected from substituted or unsubstituted alkanesulfonic acids, hydroxyalkanesulfonic acids, benzenesulfonic acids, and naphthalenesulfonic acids are used as acids, and By using salts of these organic sulfonic acids as divalent tin salts, adding thiourea, and further adding a water-soluble zirconium salt to a bath containing these components, a tin film was precipitated from this bath. The inventors have discovered that the particles are uniform and fine, have a dense precipitation state with good appearance, and have a relatively good precipitation rate, leading to the present invention.
以下、本発明につき更に詳しく説明する。The present invention will be explained in more detail below.
本発明に係る無電解錫めっき浴は、置換又は未置換のア
ルカンスルホン酸、ヒドロキシアルカンスルホン酸、ベ
ンゼンスルホン酸及びナフタレンスルホン酸から選ばれ
る1種以上の有機スルホン酸、これらスルホン酸の2価
の錫塩、チオ尿素、水溶性ジルコニラ・ム塩を含有して
なるものである。The electroless tin plating bath according to the present invention includes one or more organic sulfonic acids selected from substituted or unsubstituted alkanesulfonic acids, hydroxyalkanesulfonic acids, benzenesulfonic acids, and naphthalenesulfonic acids, and divalent tin plating baths of these sulfonic acids. It contains tin salt, thiourea, and water-soluble zirconyl salt.
ここで、未置換のアルカンスルホン酸としてはCn H
2n + x S O3H
(但し、nは1〜5、好ましくは1又は2である)で示
されるものが使用でき、未置換のヒドロキシアルカンス
ルホン酸としては
○H
C,l、H,、ヤ1−CH−C,H,,+、−5o3H
(但し、mは0〜2、Qは1〜3である)で示されるも
のが使用できる。また、置換アルカンスルホン酸、ヒド
ロキシアルカンスルホン酸としてはそのアルキル基の水
素原子の一部がハロゲン原子、アリール基、アルキルア
リール基、カルボキシル基、スルホン酸基などで置換さ
れたものが使用できる。一方、ベンゼンスルホン酸、ナ
フタレンスルホン酸は、下記式
で示されるものであるが、置換ベンゼンスルホン徴、ナ
フタレンスルホン酸としては、ベンゼン環、ナフタレン
環の水素原子の一部が水酸基、ハロゲン原子、アルキル
基、カルボキシル基、ニトロ基。Here, as the unsubstituted alkanesulfonic acid, CnH
Those represented by 2n + x S O3H (where n is 1 to 5, preferably 1 or 2) can be used, and unsubstituted hydroxyalkanesulfonic acids include ○H C,l,H,,Y1 -CH-C,H,,+,-5o3H
(However, m is 0 to 2, and Q is 1 to 3) can be used. Further, as substituted alkanesulfonic acids and hydroxyalkanesulfonic acids, those in which a portion of the hydrogen atoms of the alkyl groups are substituted with halogen atoms, aryl groups, alkylaryl groups, carboxyl groups, sulfonic acid groups, etc. can be used. On the other hand, benzenesulfonic acid and naphthalenesulfonic acid are represented by the following formula, and in naphthalenesulfonic acid, some of the hydrogen atoms in the benzene ring and naphthalene ring are hydroxyl groups, halogen atoms, alkyl group, carboxyl group, nitro group.
メルカプト基、アミノ基、スルホン酸基などで置換され
たものが使用できる。Those substituted with mercapto groups, amino groups, sulfonic acid groups, etc. can be used.
具体的には、本発明で好適に使用し得る有機カルボン酸
として、メタンスルホン酸、エタンスルホン酸、プロパ
ンスルホン酸、2−プロパンスルホン酸、ブタンスルホ
ン酸、2−ブタンスルホン酸、ペンタンスルホン酸、ク
ロルプロパンスルホン酸、2−ヒドロキシエタン−1−
スルホン酸、2−ヒドロキシプロパン−1−スルホン酸
、2−ヒドロキシブタン−1−スルホン酸、2−ヒドロ
キシペンタンスルホン酸、アリルスルホン酸、2−スル
ホ酢酸、2−又は3−スルホプロピオン酸、スルホこは
く酸、スルホマレイン酸、スルホフマル酸、ベンゼンス
ルホン酸、トルエンスルホン酸、キシレンスルホン酸、
ニトロベンゼンスルホン酸、スルホ安息香酸、スルホサ
ルチル酸、ベンズアルデヒドスルホン酸、p−フェノー
ルスルホン酸などが例示され、これらの1種又は2種以
上を組み合せて用いることができる。Specifically, organic carboxylic acids that can be suitably used in the present invention include methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, 2-propanesulfonic acid, butanesulfonic acid, 2-butanesulfonic acid, pentanesulfonic acid, Chlorpropanesulfonic acid, 2-hydroxyethane-1-
Sulfonic acid, 2-hydroxypropane-1-sulfonic acid, 2-hydroxybutane-1-sulfonic acid, 2-hydroxypentanesulfonic acid, allylsulfonic acid, 2-sulfoacetic acid, 2- or 3-sulfopropionic acid, sulfosuccinic acid acids, sulfomaleic acid, sulfofumaric acid, benzenesulfonic acid, toluenesulfonic acid, xylene sulfonic acid,
Examples include nitrobenzenesulfonic acid, sulfobenzoic acid, sulfosalicylic acid, benzaldehyde sulfonic acid, and p-phenolsulfonic acid, and one or more of these can be used in combination.
本発明のめっき浴は上述した有機スルホン酸とこれら有
機スルホン酸の2価の錫塩とを含むものであり、この場
合酸と錫塩とで有機スルホン酸の種類が相違していても
よいが、同じである方が好ましい。なお、有機スルホン
酸の2価の錫塩は、過剰の有機スルホン酸を用い、これ
に他の2価の錫塩を添加して、めっき浴中で有機スルホ
ン酸の2価の錫塩を形成するようにしてもよい。The plating bath of the present invention contains the above-mentioned organic sulfonic acids and divalent tin salts of these organic sulfonic acids, and in this case, the types of organic sulfonic acids may be different between the acid and the tin salt. , preferably the same. Note that the divalent tin salt of an organic sulfonic acid is prepared by using an excess of organic sulfonic acid and adding another divalent tin salt to it to form a divalent tin salt of an organic sulfonic acid in a plating bath. You may also do so.
上記有機スルホン酸の使用量は、めっき浴112当り2
0〜30og、特に50〜150gとすることが好まし
く、また2価の錫塩は錫イオンとして10〜50g、特
に10〜30gとすることが好ましい。この場合、有機
スルホン酸と2価の錫イオンとの割合は1〜10:1、
特に3〜7:1程度とすることが好適である。The amount of the organic sulfonic acid used is 2 per 112 plating baths.
It is preferable to set it as 0-30og, especially 50-150g, and it is preferable to set it as 10-50g, especially 10-30g of divalent tin salt as a tin ion. In this case, the ratio of organic sulfonic acid to divalent tin ion is 1 to 10:1,
In particular, a ratio of about 3 to 7:1 is suitable.
本発明で用いるチオ尿素は錯化剤といった作用を有する
もので、その使舟量はめっき浴IQ当り30〜130g
、特に50〜110gとすルコトが好ましい。The thiourea used in the present invention acts as a complexing agent, and the amount used is 30 to 130 g per plating bath IQ.
Especially preferred is 50 to 110 g.
本発明のめっき浴には、更に水溶性ジルコニウム塩を添
加するもので、水溶性ジルコニウム塩の添加により均一
で微細な粒子の析出皮膜を形成することができる。この
場合、水溶性ジルコニウム塩としては硝酸ジルコニウム
、ジルコニウムアセチルアセトネート等を用いることが
でき、その使用量はジルコニウムイオンとして10〜1
000■/Q、特に50〜200■/Qとすることが有
効である。ジルコニウム量が少なすぎると無電解錫めっ
き皮膜粒子の微細化効果が十分発揮されない場合があり
、多すぎると析出スピードが低下する場合が生じる。A water-soluble zirconium salt is further added to the plating bath of the present invention, and by adding the water-soluble zirconium salt, it is possible to form a precipitated film of uniform and fine particles. In this case, zirconium nitrate, zirconium acetylacetonate, etc. can be used as the water-soluble zirconium salt, and the amount used is 10 to 1 zirconium ion.
000 ■/Q, especially 50 to 200 ■/Q is effective. If the amount of zirconium is too small, the effect of making the particles of the electroless tin plating film finer may not be sufficiently exerted, and if it is too large, the precipitation speed may be reduced.
なお、本発明のめっき浴は酸性であり、特にpH0,2
〜1.5、より望ましくは0.5〜0.9であることが
好ましい。Note that the plating bath of the present invention is acidic, especially at pH 0.2.
-1.5, more preferably 0.5-0.9.
上述しためづき浴を用いて無電解錫めっきを行なう場合
、その温度は60〜90℃、特に65〜80”Cが好ま
しい。この場合、被めっき物は適宜選定され、例えば銅
、銅合金などの無電解錫めっきに好適に用いられる。な
お、めっきに際し、必要により撹拌を行なうこともでき
る。When performing electroless tin plating using the above-mentioned dipping bath, the temperature is preferably 60 to 90°C, particularly 65 to 80"C. In this case, the object to be plated is appropriately selected, such as copper, copper alloy, etc. It is suitably used for electroless tin plating.Additionally, stirring can be performed if necessary during plating.
次に、実施例により本発明を具体的に説明するが1本発
明は下記の実施例に制限されるものではない。Next, the present invention will be specifically explained with reference to examples, but the present invention is not limited to the following examples.
下記組成の無電解錫めっき浴を調製した。 An electroless tin plating bath having the following composition was prepared.
メタンスルホン酸 100 g / Qチオ
尿素 80 g / Q硝酸ジル
コニウム 100■/QpH0,8
次に、常法により前処理した銅板に上記めっき浴を用い
て70℃でめっきを行なった。Methanesulfonic acid 100 g/Q thiourea 80 g/Q zirconium nitrate 100 μ/Q pH 0.8 Next, plating was performed at 70° C. using the above plating bath on a copper plate pretreated by a conventional method.
得られた無電解錫めっき皮膜の外観は均一な銀白色を示
し、顕微鏡でa察したところ、参考写真1に示すように
粒子は微細で均一であった。The appearance of the obtained electroless tin plating film was a uniform silvery white color, and when observed under a microscope, the particles were fine and uniform, as shown in Reference Photo 1.
また、析出速度は3分で0.5声、30分で1.3pで
あった。Further, the deposition rate was 0.5 p in 3 minutes and 1.3 p in 30 minutes.
比較のため、硝酸ジルコニウムを添加しない以外は上記
と同様の組成のめっき浴を用いてめっきを行なった。得
られた無電解錫めっき皮膜は参考写真2に示すような粗
大な粒子を含むものであった。For comparison, plating was performed using a plating bath having the same composition as above except that zirconium nitrate was not added. The obtained electroless tin plating film contained coarse particles as shown in Reference Photo 2.
なお、参考写真1,2はいずれも倍率40倍の顕微鏡写
真である。Note that reference photographs 1 and 2 are both micrographs at a magnification of 40 times.
以上説明したように、本発明によれば均一で微細な粒子
からなる緻密な無電解錫めっき皮膜を酸性浴から形成す
ることができる。As explained above, according to the present invention, a dense electroless tin plating film made of uniform fine particles can be formed from an acid bath.
Claims (1)
アルカンスルホン酸、ベンゼンスルホン酸及びナフタレ
ンスルホン酸から選ばれる1種以上の有機スルホン酸、
これらスルホン酸の2価の錫塩、チオ尿素、水溶性ジル
コニウム塩を含有してなることを特徴とする無電解錫め
っき浴。 2、請求項1記載の無電解錫めっき浴を用いて被めっき
物を無電解錫めっきすることを特徴とする無電解錫めっ
き方法。[Scope of Claims] 1. One or more organic sulfonic acids selected from substituted or unsubstituted alkanesulfonic acids, hydroxyalkanesulfonic acids, benzenesulfonic acids, and naphthalenesulfonic acids;
An electroless tin plating bath characterized by containing a divalent tin salt of these sulfonic acids, thiourea, and a water-soluble zirconium salt. 2. An electroless tin plating method, characterized in that an object to be plated is electrolessly tin plated using the electroless tin plating bath according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21184788A JP2611364B2 (en) | 1988-08-26 | 1988-08-26 | Electroless tin plating bath and electroless tin plating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21184788A JP2611364B2 (en) | 1988-08-26 | 1988-08-26 | Electroless tin plating bath and electroless tin plating method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0261073A true JPH0261073A (en) | 1990-03-01 |
JP2611364B2 JP2611364B2 (en) | 1997-05-21 |
Family
ID=16612575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21184788A Expired - Lifetime JP2611364B2 (en) | 1988-08-26 | 1988-08-26 | Electroless tin plating bath and electroless tin plating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2611364B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0445282A (en) * | 1990-06-13 | 1992-02-14 | Sumitomo Light Metal Ind Ltd | Internally tinned copper pipe for feeding water and hot water and production thereof |
EP0915183A1 (en) * | 1997-11-07 | 1999-05-12 | ATOTECH Deutschland GmbH | Tinning of copper tubes |
US6180179B1 (en) | 1997-06-02 | 2001-01-30 | Nihon Parkerizing Co., Ltd. | Displace deposition-plated and doping-modified metal material and process for producing same |
US6821323B1 (en) * | 1999-11-12 | 2004-11-23 | Enthone Inc. | Process for the non-galvanic tin plating of copper or copper alloys |
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HUE061592T2 (en) | 2014-07-07 | 2023-07-28 | Honeywell Int Inc | Thermal interface material with ion scavenger |
KR102470083B1 (en) | 2014-12-05 | 2022-11-23 | 허니웰 인터내셔널 인코포레이티드 | High performance thermal interface materials with low thermal impedance |
US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
WO2017152353A1 (en) | 2016-03-08 | 2017-09-14 | Honeywell International Inc. | Phase change material |
US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
US11041103B2 (en) | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
-
1988
- 1988-08-26 JP JP21184788A patent/JP2611364B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0445282A (en) * | 1990-06-13 | 1992-02-14 | Sumitomo Light Metal Ind Ltd | Internally tinned copper pipe for feeding water and hot water and production thereof |
US6180179B1 (en) | 1997-06-02 | 2001-01-30 | Nihon Parkerizing Co., Ltd. | Displace deposition-plated and doping-modified metal material and process for producing same |
EP0915183A1 (en) * | 1997-11-07 | 1999-05-12 | ATOTECH Deutschland GmbH | Tinning of copper tubes |
US6821323B1 (en) * | 1999-11-12 | 2004-11-23 | Enthone Inc. | Process for the non-galvanic tin plating of copper or copper alloys |
Also Published As
Publication number | Publication date |
---|---|
JP2611364B2 (en) | 1997-05-21 |
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