JPH025511A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH025511A JPH025511A JP15483088A JP15483088A JPH025511A JP H025511 A JPH025511 A JP H025511A JP 15483088 A JP15483088 A JP 15483088A JP 15483088 A JP15483088 A JP 15483088A JP H025511 A JPH025511 A JP H025511A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- group
- compound semiconductor
- iii
- zn5e
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 28
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 2
- 125000004429 atom Chemical group 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体装置に関し、特ｊシニ高純度で高品質の
半導体層からなるＩＩＩ −Ｖ族／ＩＩ−ＶＩｌ族環導
体装置関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device, and particularly to a III-V group/II-VII group ring conductor device comprising a semiconductor layer of high purity and high quality. .
［従来の技術］
従来より、ＩＩ −ＶＩ族化合物半導体は、ＩＩＩ −
Ｖ族化合物半導体基板上に結晶成長し、・ていた。例え
ば、Ｚｎ５ｅはＧａＡｓ基板上に成長し、７ｎＳはＧａ
Ｐ基板上に成長していた。この理由は１ｎｓｅとＧａＡ
ｓとの格子不整が小さい、ＺｎＳとＧａＰとのＪ’ｌｌ
子不整が小さいこと、ＩＩＩ −Ｖ族化合物基板が転位
が小さいこと、高品質であること、Ｓｉ、ＧｅなとのＩ
Ｖ族基板を用いた際に発生するアンチフＪ−，イズドメ
インの生成の問題がないことなどによる。[Prior Art] Conventionally, II-VI group compound semiconductors are III-VI group compound semiconductors.
Crystals were grown on a Group V compound semiconductor substrate. For example, Zn5e is grown on a GaAs substrate, and 7nS is grown on a GaAs substrate.
It was grown on a P substrate. The reason for this is 1nse and GaA
J'll of ZnS and GaP with small lattice mismatch with s
small misalignment, small dislocations in the III-V group compound substrate, high quality, and I
This is due to the fact that there is no problem of generation of anti-J-, is-domains that occur when a group V substrate is used.
［発明が解決しようどする課題］
しかしながら、ＧａＡｓ基板−トのＺｎ５ｅ成長を例に
取って説明すると、ＧａＡｓ／Ｚｎ５ｅヘテロ界面での
相互拡散が著しく、ＺｎおよびＳｅは４００℃の成長温
度において、１時間のうちに約５００人もＧａＡｓ中に
拡散する。また、ＧａおよびＡｓは４００℃の成長温度
で１時間のうちに、約７０人もＺｎ５ｅ中に拡散する（
Ｎ。[Problems to be Solved by the Invention] However, taking Zn5e growth on a GaAs substrate as an example, interdiffusion at the GaAs/Zn5e hetero interface is significant, and Zn and Se are Approximately 500 particles diffuse into the GaAs over time. In addition, Ga and As diffuse into Zn5e by about 70% in 1 hour at a growth temperature of 400°C (
N.
にｏｂａｙａｓｈｉ、 Ｊｐｎｊ、＾ｐｐ１．Ｐｈｙｓ
、 、に投稿中）。このペテロ界面における相互拡散に
よフて、ＧａＡｓ基板上に形成した２ｎＳｅ層はアンド
ープであってもＧａとＡｓにより自動的にドープされて
しまう。ni obayashi, Jpnj, ^pp1. Phys.
, currently posted). Due to this mutual diffusion at the Peter interface, the 2nSe layer formed on the GaAs substrate is automatically doped with Ga and As even if it is undoped.
さらにまた、ＧａＡｓ基板に拡散したＩｎとＳｅにより
ＧａＡｓ基板のＺｎ５ｅ近傍のＧａＡｓの導電形および
抵抗率が変化する。従って、ＧａＡｓが基板上にＺｎ５
ｅのＰＮ接合を形成した場合、ＧａＡｓ基板とＺｎ５ｅ
ヘテロ界面との相互拡散による制御不可能な変成層が形
成サレ、２ｎＳｅのＰＮダイオードの特性を劣化させて
いた。また７、ｎＳｅ／ＧａＡｓ超格子、量子井戸構造
の作製はへテロ界面の相互拡散により不可能であった。Furthermore, the conductivity type and resistivity of GaAs near Zn5e of the GaAs substrate change due to In and Se diffused into the GaAs substrate. Therefore, GaAs has Zn5 on the substrate.
When forming a PN junction of e, GaAs substrate and Zn5e
An uncontrollable metamorphic layer formed due to interdiffusion with the hetero interface deteriorated the characteristics of the 2nSe PN diode. Furthermore, it has been impossible to fabricate an nSe/GaAs superlattice or quantum well structure due to interdiffusion at the hetero interface.
従って、本発明の目的はＩＩ−ＶＩ族／ ＩＩＩ −Ｖ
族のへテロ構造において、原子の相互拡散を抑制し、特
性の優れたＰＮ接合ＩＩ −ＶＩｌ族環導体装置特に急
峻な界面を持つＩＩ −ＶＩ族／ ＩＩＩ −Ｖ族超格
子、量子井戸構造を提供することにある。Therefore, the object of the present invention is to group II-VI/III-V
In group heterostructures, PN junction II-VIl group ring conductor devices with excellent characteristics suppress interdiffusion of atoms. Especially, group II-VI/group III-V superlattices and quantum well structures with steep interfaces are developed. It is about providing.
［課題を解決するための手段Ｊ
かかる目的を達成するために、本発明の第１の形態は、
ＩＩＩ −Ｖ族化合物半導体基板に、ＩＩ −ＩＶ族化
合物半導体層のＰＮ接合を形成した構造において、ＩＩ
Ｉ −Ｖ族化合物半導体基板とＰ形またはＮ形ＩＩ −
ＶＬ族化合物半導体層との間に、ＩＩＩ族原子がＡ１で
あるＩＩＩ −Ｖ族化合物半導体層が挿入されているこ
とを特徴とする。[Means for Solving the Problems J In order to achieve such an object, the first form of the present invention is as follows:
In a structure in which a PN junction of a II-IV group compound semiconductor layer is formed on a III-V group compound semiconductor substrate,
I - V group compound semiconductor substrate and P type or N type II -
A III-V group compound semiconductor layer in which the group III atom is A1 is inserted between the VL group compound semiconductor layer and the VL group compound semiconductor layer.
本発明の第２の形態は、ＩＩＩ −Ｖ族化合物半導体層
とＴＩ −ＶＩ族化合物半導体層とを交互に繰り返した
構造において、ＩＩＩ −Ｖ族化合物半導体層とＩＩ
−ＶＩ属化合物半導体層との間に、Ｔｌｌｌ原子が＋ｌ
であるＩＩＩ −Ｖ族化合物半導体層が挿入されている
ことを特徴とする。A second embodiment of the present invention provides a structure in which III-V group compound semiconductor layers and TI-VI group compound semiconductor layers are alternately repeated.
-Tllll atoms +l between the group VI compound semiconductor layer
A III-V compound semiconductor layer is inserted therein.
［作 用］
本発明によれば、例えばＺｎ５ｅ／ＡｆｌＡｓへテロ接
合で代表されるＩＩ −ＶＩ族／Ａ１１−Ｖ族ヘテロ接
合による相互拡散は著しく少ない。この結果、Ｚｎ５ｅ
／ＧａＡｓヘテロ界面において物性の制御不可能な変成
層は形成されず、Ｚｎ５ｅ層へのＧａおよびＡｓのオー
トドーピングは著しく抑制される。[Function] According to the present invention, interdiffusion due to the II-VI group/A11-V group heterojunction represented by, for example, the Zn5e/AflAs heterojunction is significantly reduced. As a result, Zn5e
A metamorphic layer with uncontrollable physical properties is not formed at the /GaAs heterointerface, and autodoping of Ga and As into the Zn5e layer is significantly suppressed.
［実施例］
以下、図面を参照して本発明の実施例を詳細に説明する
。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
実施例１
第１図は本発明の半導体装置の一実施例を示す断面図で
ある。第１図はｐ−ＧａＡｓ基板上にｐ−へ１＾Ｓ層を
形成し、その上にＺｎ５ｅのＰＮ接合を形成した例を示
したものである。Embodiment 1 FIG. 1 is a sectional view showing an embodiment of the semiconductor device of the present invention. FIG. 1 shows an example in which a p-1^S layer is formed on a p-GaAs substrate, and a Zn5e PN junction is formed thereon.
ｐ−ＧａＡＳ基板１（Ｚｎドープ量、１ ｘ １０”ｃ
ｍ−’）上に厚ざ１０００人のｐ−ＡｆｉＡｓ層２（Ｚ
ｎドープ量、１ｘ１０”ｃｍ−３）順次厚さ５０００人
のｐ−Ｚｎ５ｅ層３（ＬｉあるいはＮドープ量、１ ｘ
１０”ｃｍ−３） 、および厚さ５０００人のＮ−Ｚ
ｎ５ｅ層４（ｃｉあるいはＡＪＺドープ量、１ ｘ １
０”ｃｍ−３）を形成して、Ｚｎ５ｅのＰＮ接合を形成
した。p-GaAS substrate 1 (Zn doping amount, 1 x 10”c
p-AfiAs layer 2 (Z
P-Zn5e layer 3 (Li or N doping amount, 1 x
10”cm-3), and 5000mm thick N-Z
n5e layer 4 (ci or AJZ doping amount, 1 x 1
0''cm-3) to form a Zn5e PN junction.
実施例２
第２図は本発明の半導体装置の他の実施例を示す断面図
である。Embodiment 2 FIG. 2 is a sectional view showing another embodiment of the semiconductor device of the present invention.
第２図はＮ−ＧａＡｓ基板上にＮ−ＡＪ：ｔＡｓ層を形
成し、その上にＺｎ５ｅのＰＮ接合を形成した例を示し
たものである。FIG. 2 shows an example in which an N-AJ:tAs layer is formed on an N-GaAs substrate, and a Zn5e PN junction is formed thereon.
Ｎ−ＧａＡｓ基板５（Ｓｉのドープ量、１ ｘ １ｏ”
ｃｍ−３）上に厚さ１０００人のＮ−１Ａｓ層６（Ｓｅ
のドープ量、１ ｘ １０′８ｃ「３） 、順次厚さ５
０００人のＮ−Ｚｎ５ｅ層７（ｃｉあるいはＡ１ドープ
量、Ｉ Ｘ １０”ｃｍ−ジ、および厚さ５０００人の
ｐ−Ｚｎ５ｅ層８（ＬｉあるいはＮドープ量、１ ｘ
１０”ｃｍ−’）を形成して、Ｚｎ５ｅのＰＮ接合を形
成した。N-GaAs substrate 5 (Si doping amount, 1 x 1o"
cm-3) with a thickness of 1000 N-1As layer 6 (Se
doping amount, 1 x 10'8c "3), successive thickness 5
000 thick N-Zn5e layer 7 (ci or A1 doping, I
10"cm-') to form a Zn5e PN junction.
上記の各実施例において、ＡｕＡｓはＧａＡｓよりも結
合エネルギーが約１ｅＶ程度強いために、＋ｌ原子ある
いはＡｓ原子は容易にＺｎ５ｅ層に拡散しないことが予
想される。実際、Ａ１１Ａｓ／ＧａＡｓヘテロ界面のＳ
ＩＭＳ分析、 ＡＥＳ分析により界面急峻性は分解能以
下であり、ＧａＡｓ／Ｚｎ５ｅど比Ｑ１ノ下へテロ界面
における構成原子の相互拡散性は著しく抑制さ１＋丁い
ることがわかった。In each of the above embodiments, since AuAs has a stronger binding energy than GaAs by about 1 eV, it is expected that +l atoms or As atoms will not easily diffuse into the Zn5e layer. In fact, the S of the A11As/GaAs hetero interface
IMS analysis and AES analysis revealed that the interface steepness was below the resolution, and that the interdiffusivity of the constituent atoms at the heterointerface was significantly suppressed by 1+ mm under the GaAs/Zn5e ratio Q1.
このことにより従来問題となっていたＺｎ５ｅ／ＧａＡ
ｓヘテロ界面の変成層は形成されず、Ｚｎ５ｅ層へのＧ
ａとＡｓのオートドーピングの問題が解決ざね、良好な
ＰＮ接合特性を示した。This caused Zn5e/GaA, which had been a problem in the past.
A metamorphic layer at the s-hetero interface is not formed, and G to the Zn5e layer
The problem of autodoping of a and As was resolved, and good PN junction characteristics were exhibited.
実施例ユ
第３図は本発明の半導体装置のさらに別の実施例を示す
断面図である。ＩＩＩ −Ｖ族化合物半導体ＧａＡｓ層
とＩＩ−ＶＩ族化合物半導体層７ｎＳｅ層との間ＩｃＡ
ｎ Ａｓ層を挟んだ例を示ず。ＧａＡｓ基板９上に厚さ
１０人のＡＱＡｓ層１０層厚０１００ 人のＧａＡｓ層
１１、厚さ１０人のＡｆ２Ａｓ層１２、層上２厚８１０
０ 人のＺｎ５ｅ層１′３を形成したｔ）のである。以
下は同様の構造を繰り返ｌノで積層する。Embodiment FIG. 3 is a sectional view showing still another embodiment of the semiconductor device of the present invention. IcA between the III-V group compound semiconductor GaAs layer and the II-VI group compound semiconductor layer 7nSe layer
n An example of sandwiching an As layer is not shown. A GaAs layer 11 with a thickness of 10 people, an Af2As layer 12 with a thickness of 10 people, an AQAs layer with a thickness of 10 people on the GaAs substrate 9, and a thickness of 810 nm on the top layer.
t) in which the Zn5e layer 1'3 was formed. Below, similar structures are repeatedly laminated one after another.
このような積層構造においては、従来問題となっている
Ｚｎ５ｅ／ＧａＡｓへ″ｊ′−ロ界面における構成原子
の相互拡散による超格子構造の破壊は観測されず、良好
な折子井戸発光が観察さシまた。In such a laminated structure, destruction of the superlattice structure due to interdiffusion of constituent atoms at the "j'-lo interface in Zn5e/GaAs, which has been a problem in the past, was not observed, and good folding well luminescence was observed. Also.
［発明の効果］
以上説明１ノたよう６″、、本発明によれば、例えば７
、ｎＳｅ／ＡＪ２ Ａｓヘテロ接合で代表さ才′ｐる＋
ｉ −ｖｉ族／Ａｊ２−Ｖ族ヘテロ接合による相互拡散
は著しく少ない、この結果、Ｚｎ５ｅ／ＧａＡｓヘテロ
界面において物性の制御不可能な変成層は形成されず、
Ｚｎ５ｅ層へのＧａおよびＡｓのオートドーピングは著
しく抑ル１さ、ｌする。[Effect of the invention] According to the present invention, for example 7
, represented by the nSe/AJ2As heterojunction
Interdiffusion due to the i-vi group/Aj2-V group heterojunction is extremely small, and as a result, no metamorphic layer with uncontrollable physical properties is formed at the Zn5e/GaAs heterointerface.
Autodoping of Ga and As into the Zn5e layer is significantly suppressed.
従って、ＰＮ接合を用いた可視光発光ダイオードの特性
は向上ｌ・、急峻な界面性を要求するＺｎ５ｅ／ Ａ
ｆｔ Ａｓ層 ＧａＡｓ超格子、量子井戸構造の実現が
可能どなる。Therefore, the characteristics of visible light emitting diodes using PN junctions are improved.
ft As layer GaAs superlattice makes it possible to realize a quantum well structure.
第１図は本発明の一実施例を示す断面図、第２図は本発
明の他の実施例を示す断面図、第３図は本発明のさらに
他の実施例を示す断面図である。
１・・・ｐ−ＧａＡＳ基板、
２・・・ｐ−ＡＪ２Ａｓ層、
３ ＝ｊｐ−４ｎＳｅ層、
４−−−Ｎ−ＺｎＳｅ層、
５− Ｎ−ＧａＡｓ基板、
６・・・Ｎ−ＡρＡｓ層、
７ ・−Ｎ−１ｎｓｅ層。
８・・・ｐ−１ｎＳｅ層。
り ＝−Ｇ ａＡ ｓ ｊ、％ ＠ｉ 、１０−−−
ＡｆＩＡｓ層、
１１＝Ｇａ八ｓｌ’５．
１２・・・ ＡＱＡｓ層、
１３−−−ＺｎＳｅ層。FIG. 1 is a sectional view showing one embodiment of the invention, FIG. 2 is a sectional view showing another embodiment of the invention, and FIG. 3 is a sectional view showing still another embodiment of the invention. 1... p-GaAS substrate, 2... p-AJ2As layer, 3 = jp-4nSe layer, 4---N-ZnSe layer, 5- N-GaAs substrate, 6... N-AρAs layer, 7.-N-1nse layer. 8...p-1nSe layer. ri = -G aA s j, % @i, 10---
AfIAs layer, 11=Ga8sl'5. 12... AQAs layer, 13---ZnSe layer.
Claims (1)
導体層のＰＮ接合を形成した構造において、III−Ｖ族
化合物半導体基板とＰ形またはＮ形II−VI族化合物半導
体層との間に、III族原子がＡｌであるIII−Ｖ族化合物
半導体層が挿入されていることを特徴とする半導体装置
。 ２）III−Ｖ族化合物半導体層とII−VI族化合物半導体
層とを交互に繰り返した構造において、III−Ｖ族化合
物半導体層とII−VI属化合物半導体層との間に、III族
原子がＡｌであるIII−Ｖ族化合物半導体層が挿入され
ていることを特徴とする半導体装置。[Claims] 1) In a structure in which a PN junction of a II-IV group compound semiconductor layer is formed on a III-V group compound semiconductor substrate, a p-n junction of a III-V group compound semiconductor substrate and a P-type or N-type II-VI group 1. A semiconductor device characterized in that a III-V compound semiconductor layer whose group III atoms are Al is inserted between the compound semiconductor layer and the compound semiconductor layer. 2) In a structure in which group III-V compound semiconductor layers and group II-VI compound semiconductor layers are alternately repeated, group III atoms are present between the group III-V compound semiconductor layer and the group II-VI compound semiconductor layer. A semiconductor device characterized in that a III-V group compound semiconductor layer made of Al is inserted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15483088A JPH025511A (en) | 1988-06-24 | 1988-06-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15483088A JPH025511A (en) | 1988-06-24 | 1988-06-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH025511A true JPH025511A (en) | 1990-01-10 |
Family
ID=15592811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15483088A Pending JPH025511A (en) | 1988-06-24 | 1988-06-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH025511A (en) |
-
1988
- 1988-06-24 JP JP15483088A patent/JPH025511A/en active Pending
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