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JPH025237A - Optical information recording/reproducing/erasing member and optical disk - Google Patents

Optical information recording/reproducing/erasing member and optical disk

Info

Publication number
JPH025237A
JPH025237A JP63153928A JP15392888A JPH025237A JP H025237 A JPH025237 A JP H025237A JP 63153928 A JP63153928 A JP 63153928A JP 15392888 A JP15392888 A JP 15392888A JP H025237 A JPH025237 A JP H025237A
Authority
JP
Japan
Prior art keywords
recording
thin film
gete
reproducing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63153928A
Other languages
Japanese (ja)
Other versions
JPH0825338B2 (en
Inventor
Takeo Ota
太田 威夫
Shigeaki Furukawa
惠昭 古川
Tetsuya Akiyama
哲也 秋山
Hidemi Isomura
秀己 磯村
Masami Uchida
内田 正美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63153928A priority Critical patent/JPH0825338B2/en
Publication of JPH025237A publication Critical patent/JPH025237A/en
Publication of JPH0825338B2 publication Critical patent/JPH0825338B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

PURPOSE:To obtain a member that can perform the crystallization with a short circle spot by choosing a specific recording thin film and forming this film on a substrate. CONSTITUTION:A mixture of GeTe and Ge (mol ratio X set as 0<X<0.3) is used as a thin film material and formed on a substrate. A GeTe alloy has a high melting point and is turned into a thin film for acquisition of an amorphous film. This film is irradiated by the laser light and heated and cooled to secure the recording actions for acquisition of an amorphous state and the crystallization. Such a composition matter has a high crystallizing speed and is crystallized with a short laser spot or circle spot. On the other hand, said composition matter receives the limitation of the cooling speed at formation of an amorphous mark owing to the high crystallizing speed. Therefore the crystallizing speed is controlled by mixing Ge having a higher melting point. Thus it is possible to suppress the change of sensitivity due to the diameters of crystallized grains in the recording and erasing cycles and to improve the cycle characteristics.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はレーザービーム等により、情報を高密度、大容
量で記録再生、及び消去できる光学情報記録再生消去部
材と光ディスクに関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical information recording/reproducing/erasing member and an optical disk that are capable of recording, reproducing, and erasing information with high density and large capacity using a laser beam or the like.

従来の技術 光デイスクメモリに関しては、TeとTea。Conventional technology Regarding optical disk memory, Te and Tea.

を主成分とするTeOx (0<x<2.0)薄膜を用
いた追記型のディスクがある。さらに、レーザ光により
薄膜を加熱し、溶融し、急冷することにより、非晶質化
し情報を記録しまたこれを加熱し、徐冷することにより
結晶化し、消去することができる材料としては、ニス・
アール・オプシンスキ(S 、R、Ovshinsky
)氏等のカルコゲン材料Ge15Te81sbz St
等が知られている。また、As! S3やA3= Se
3あるいはSb、3e。
There is a write-once type disk using a thin film of TeOx (0<x<2.0) whose main component is TeOx (0<x<2.0). Furthermore, varnish is a material that can record information by heating a thin film with laser light, melting it, and rapidly cooling it, and then crystallizing and erasing information by heating and slowly cooling it.・
Earl Ovshinsky (S, R, Ovshinsky)
) et al.'s chalcogen material Ge15Te81sbz St
etc. are known. Also, As! S3 or A3 = Se
3 or Sb, 3e.

等カルコゲン元素と周期律表第■族あるいはGe等の第
■族元素等の組み合せからなる薄膜等が広く知られてい
る。これらの薄膜にレーザ光で情報を記録し、その情報
を消去する方法としては、あらかじめ薄膜を結晶化させ
ておき、これにφ1μmに絞ったレーザ光を情報に対応
させて強度変調を施し、例えば、円盤状の記録ディスク
を回転せしめて照射し、このレーザ光照射部位は、薄膜
の融点以上に昇温し、かつ急冷し、非晶質化したマーク
として情報の記録がおこなえる。この情報を消去するに
際してはディスクの回転トラック方向に長いスポット光
を照射することにより、薄膜を加熱昇温させ、長いスポ
ット光による徐冷効果によって再び結晶化させる方法が
知られている。
Thin films made of a combination of an isochalcogenic element and an element from group Ⅰ of the periodic table or a group ① element such as Ge are widely known. In order to record information on these thin films with laser light and erase that information, the thin film is crystallized in advance, and a laser light focused on a diameter of 1 μm is intensity-modulated in accordance with the information, for example. A disc-shaped recording disk is rotated and irradiated, and the area irradiated with the laser beam is heated to a temperature higher than the melting point of the thin film and rapidly cooled, so that information can be recorded as an amorphous mark. A known method for erasing this information is to irradiate a long spot light in the direction of the rotating track of the disk to heat the thin film to raise its temperature, and then crystallize it again by the slow cooling effect of the long spot light.

発明が解決しようとする課題 薄膜を加熱昇温し、溶融急冷非晶質化および加熱昇温結
晶化の手段を用いる情報記録および消去可能な記録媒体
における第一の課題は結晶化に際し、長いスポット光に
よる徐冷効果を必要とすることである。第二の課題は加
熱サイクルに対応して信号品質が変動することである。
Problems to be Solved by the Invention The first problem with information recording and erasable recording media that uses means of heating a thin film to raise its temperature, melting and quenching it into an amorphous state, and heating and heating it to crystallize it is that the first problem is that long spots are created during crystallization. This requires a slow cooling effect using light. The second problem is that the signal quality fluctuates in response to heating cycles.

この変動要因としては、記録スポット光および消去スポ
ット光による400℃以上の急速な加熱、冷却の多数回
のくりかえし刺激による基板材質の熱的、機械的な損傷
がある。さらに、記録薄膜の熱的、機械的な損傷がある
。記録薄膜については、その構成組成によっては、膜中
の組成、成分の場所的な変化いわゆる偏析が発生する場
合もある。
Factors contributing to this variation include thermal and mechanical damage to the substrate material due to repeated stimulation of rapid heating and cooling of 400° C. or higher by the recording spot light and the erasing spot light many times. Furthermore, there is thermal and mechanical damage to the recording thin film. Regarding the recording thin film, depending on its composition, local changes in the composition and components in the film, so-called segregation, may occur.

基板あるいは記録膜が以上のような変化を生じた場合、
記録再生、消去のサイクルにおいて、ノイズの増大を生
じ、サイクル特性の劣化が発生するという課題があった
If the substrate or recording film undergoes any of the above changes,
In the recording/reproducing/erasing cycle, there is a problem in that noise increases and cycle characteristics deteriorate.

本発明の目的は第一に短い、サークルスポットで結晶化
をおこなえる部材を提供することである。
The first object of the present invention is to provide a member that can perform crystallization in a short, circular spot.

第二の目的はサイクル特性の安定な部材を提供すること
である。
The second purpose is to provide a member with stable cycle characteristics.

課題を解決するための手段 本発明は、レーザ光等の照射により熱的に薄膜の状態を
変化させて情報を記録および消去する部材において、薄
膜材料として、GeTeと、Geの混合体とし、Geと
GeTeのモル比をXとして、X = G e / G
 e T eを0<X<0.3に選び、これを基板に形
成してなることを特徴とする光学情報記録再生消去部材
を提供するものである。
Means for Solving the Problems The present invention provides a member for recording and erasing information by thermally changing the state of the thin film through irradiation with laser light, etc. The thin film material is a mixture of GeTe and Ge. and GeTe, where X is the molar ratio of
The present invention provides an optical information recording/reproducing/erasing member characterized in that eTe is selected to satisfy 0<X<0.3 and is formed on a substrate.

作用 GeTe合金は融点が、Tm=725℃と高く、薄膜化
することにより、非晶質膜が得られ、この膜にレーザ光
を照射し、昇温溶融急冷あるいは、昇温徐冷することに
より非晶質化、結晶化の記録作用を有する。
Function GeTe alloy has a high melting point of Tm=725°C, and by making it into a thin film, an amorphous film can be obtained.By irradiating this film with laser light and melting and rapidly cooling it at an elevated temperature, or by slowly cooling it at an elevated temperature. It has a recording effect of amorphization and crystallization.

この組成体は結晶化速度が速く、短いレーザスポットや
サークルスポットで結晶化する性質を有する。しかしな
がら、逆に結晶化速度が速いために非晶質化マーク形成
に、冷却速度の制限をうける。そこで、融点の高い、T
m=936℃のGeを混合することにより、結晶化速度
を制御する。Geの混合量を多くすることにしたがって
結晶化速度が低下し、逆に非晶質化マーク形成が容易に
なる。このGeは結晶化、非晶質化の過程において、G
eTeの結晶化粒径の成長に対する阻止効果を有し、記
録、消去のサイクルにおいて結晶化粒径による感度変化
を押さえサイクル特性の向上をもたらす。
This composition has a fast crystallization rate and has the property of crystallizing in a short laser spot or circle spot. However, on the contrary, since the crystallization rate is fast, the formation of amorphous marks is limited by the cooling rate. Therefore, T with a high melting point
The crystallization rate is controlled by mixing Ge at m=936°C. As the amount of Ge mixed increases, the crystallization speed decreases, and conversely, the formation of amorphous marks becomes easier. In the process of crystallization and amorphization, this Ge
It has the effect of inhibiting the growth of the crystallized grain size of eTe, suppresses sensitivity changes due to the crystallized grain size during recording and erasing cycles, and improves cycle characteristics.

実施例 以下本発明の一実施例について、図面を用いて説明する
EXAMPLE An example of the present invention will be described below with reference to the drawings.

記録層である薄膜を形成する基板としては、あらかじめ
、レーザ光案内用の溝あるいは、ピット列を形成したポ
リカーボネイト等の樹脂基板あるいは、ガラス板を用い
る。この表面にあらかじめ耐熱性のすぐれたZnSある
いはsio、等の第一の無機誘電体層を形成してお(。
As the substrate on which the thin film serving as the recording layer is formed, a resin substrate made of polycarbonate or the like, or a glass plate, on which grooves or pit rows for guiding laser light are formed in advance is used. On this surface, a first inorganic dielectric layer such as ZnS or SIO, which has excellent heat resistance, is formed in advance.

この誘電体層としては510!を15モル%以上含ませ
たZnS誘電体層が好ましい。
This dielectric layer is 510! A ZnS dielectric layer containing 15 mol % or more of ZnS is preferred.

この上に、GeTe合金および過剰Geからなる混合薄
膜を形成する。さらにこの記録薄膜層の上に第二の無機
誘電体層を設けることにより耐熱性の向上をはかること
ができる。薄膜形成の方法としては、真空蒸着あるいは
、スバフタ法が使用できる。第二の無機誘電体層の上に
反射層を設けることにより、感度の向上をはかることも
できる。
On top of this, a mixed thin film consisting of a GeTe alloy and excess Ge is formed. Furthermore, heat resistance can be improved by providing a second inorganic dielectric layer on this recording thin film layer. As a method for forming a thin film, vacuum evaporation or a vacuum deposition method can be used. Sensitivity can also be improved by providing a reflective layer on the second inorganic dielectric layer.

この薄膜の膜厚として80n+++を選ぶ。さらに保護
板としてポリカーボネイト板を接着剤で密着する。
80n+++ is selected as the thickness of this thin film. Furthermore, a polycarbonate plate is attached with adhesive as a protective plate.

φ130 vnaのディスクとして、1800rpm回
転でfl=3.43MHzの信号と、f 2 =1.0
MHzの信号のオーパーライト特性を測定する。オーバ
ーライドは、1ケのサークルスポットφ1μmのレーザ
光により、高いパワーレベル18IIW、低いパワーレ
ベル101のパワーレベル間の変調で、高いパワーレベ
ルで非晶質化マークを形成し、低いパワーレベルで非晶
質化マークを結晶化して消去する同時消録の方法である
As a disk of φ130 vna, a signal of fl = 3.43 MHz at 1800 rpm rotation and f 2 = 1.0
Measure the overwrite characteristics of a MHz signal. Override is a modulation between a high power level of 18IIW and a low power level of 101 using a laser beam with a circle spot of 1 μm in diameter, forming an amorphous mark at a high power level and forming an amorphous mark at a low power level. This is a simultaneous erasure method that crystallizes and erases the quality marks.

第1図に記録薄膜の組成と記録特性および消去特性の関
係をしめす。記録薄膜の組成はX−Ge/ G e T
 eであられす。記録特性はC/Nであられす。消去特
性は消去率であられす。X=Oつまり、過剰Geがない
場合は記録C/Nは低く、これは、非晶質化マークが形
成されにくいことに対応している。Geが少し入るだけ
で記録C/Nは急に増大しX=0.1以上で50dB以
上になる。ただし、消去率は逆にx=0つまり、過剰G
eがない場合の方が高く、Ge量が増加するにしたがっ
て低下する。X−0,4以上で20dB以下になる。サ
イクル特性は、Geが少ない領域では記録振幅の低下に
より限界が生ずる。Geが多い領域ではノイズレベルの
増大により限界が生ずる。X=0.2では、C/Nおよ
び消去率が高く、さらに、IE+5サイクル以上安定で
ある。
FIG. 1 shows the relationship between the composition of the recording thin film and its recording and erasing characteristics. The composition of the recording thin film is X-Ge/GeT
Hail e. The recording characteristics are C/N. The erasure characteristic is expressed as the erasure rate. In other words, when there is no excess Ge, the recording C/N is low, which corresponds to the fact that amorphous marks are less likely to be formed. When only a small amount of Ge is added, the recording C/N suddenly increases and becomes 50 dB or more when X=0.1 or more. However, the erasure rate is x = 0, that is, the excess G
It is higher when there is no e, and decreases as the amount of Ge increases. It becomes 20dB or less at X-0.4 or higher. The cycle characteristics have a limit due to a decrease in recording amplitude in a region where Ge is small. In regions with a lot of Ge, a limit arises due to an increase in the noise level. When X=0.2, the C/N and erasure rate are high, and furthermore, it is stable for IE+5 cycles or more.

発明の効果 レーザ光による記録再生消去をおこなう部材において、
GeTe合金に過剰Geを混合した記録薄膜によりつぎ
の効果を得る。
Effects of the invention In a member that performs recording, reproducing and erasing using a laser beam,
The following effects can be obtained by using a recording thin film made of a GeTe alloy mixed with excess Ge.

(11非晶質化記録および、結晶化消去が容易で1スポ
ツトサークルビームオーバライトが可能。
(11 Amorphous recording and crystallization erasure are easy, and one-spot circle beam overwriting is possible.

(2)多サイクル記録および消去においてC/N。(2) C/N in multi-cycle recording and erasing.

消去率特性がすぐれる。Excellent erasure rate characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における光学情報記録再生消
去部材の記録薄膜の組成とレーザ記録、消去特性をあら
れすグラフである。 ■・・・・・・記録特性C/N、2・・・・・・消去特
性、消去率。
FIG. 1 is a graph showing the composition of the recording thin film and the laser recording and erasing characteristics of an optical information recording/reproducing/erasing member in one embodiment of the present invention. ■... Recording characteristics C/N, 2... Erasing characteristics, erasing rate.

Claims (3)

【特許請求の範囲】[Claims] (1)レーザー光の照射により、そのエネルギーを吸収
して昇温し、溶融し、急冷し、アモルファス化する性質
とアモルファスの状態を昇温することにより、結晶化す
る性質を有する記録薄膜としてGeTe合金と過剰Ge
の混合体とし、Ge/GeTeのモル比をXとして、0
<X<0.3に選び基板に形成してなる光学情報記録再
生消去部材。
(1) GeTe can be used as a recording thin film that has the property of absorbing the energy of laser light, heating up, melting, rapidly cooling, and becoming amorphous, and the property of crystallizing by heating the amorphous state. Alloys and excess Ge
, and the molar ratio of Ge/GeTe is X, 0
An optical information recording/reproducing/erasing member formed on a substrate selected to satisfy <X<0.3.
(2)基板の上にあらかじめ誘電体層を形成し、その上
にGeTe−過剰Geからなる薄膜を形成し、さらにそ
の上に誘電体層を形成し、さらにその誘電体層の上に反
射層を形成してなる請求項(1)記載の光学情報記録再
生消去部材。
(2) A dielectric layer is formed on the substrate in advance, a thin film made of GeTe-excess Ge is formed on it, a dielectric layer is further formed on it, and a reflective layer is further formed on the dielectric layer. The optical information recording/reproducing/erasing member according to claim 1, wherein the optical information recording/reproducing/erasing member is formed of:
(3)記録薄膜としてGeTe−過剰Geからなる材料
を用いた光ディスク。
(3) An optical disc using a material consisting of GeTe-excess Ge as a recording thin film.
JP63153928A 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member recording / reproducing / erasing method Expired - Fee Related JPH0825338B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63153928A JPH0825338B2 (en) 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member recording / reproducing / erasing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63153928A JPH0825338B2 (en) 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member recording / reproducing / erasing method

Publications (2)

Publication Number Publication Date
JPH025237A true JPH025237A (en) 1990-01-10
JPH0825338B2 JPH0825338B2 (en) 1996-03-13

Family

ID=15573142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63153928A Expired - Fee Related JPH0825338B2 (en) 1988-06-22 1988-06-22 Optical information recording / reproducing / erasing member recording / reproducing / erasing method

Country Status (1)

Country Link
JP (1) JPH0825338B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04146188A (en) * 1990-10-09 1992-05-20 Matsushita Electric Ind Co Ltd Optical information recording medium and manufacture thereof
WO2000039794A1 (en) * 1998-12-25 2000-07-06 Teijin Limited Phase change-type optical recording medium and process for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60157894A (en) * 1984-01-27 1985-08-19 Nippon Columbia Co Ltd Optical information recording medium
JPS6166696A (en) * 1984-09-11 1986-04-05 Nippon Telegr & Teleph Corp <Ntt> Laser recording medium
JPS62279533A (en) * 1986-05-28 1987-12-04 Toshiba Corp Optical recording medium
JPS6339387A (en) * 1986-08-05 1988-02-19 Toray Ind Inc Optical recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60157894A (en) * 1984-01-27 1985-08-19 Nippon Columbia Co Ltd Optical information recording medium
JPS6166696A (en) * 1984-09-11 1986-04-05 Nippon Telegr & Teleph Corp <Ntt> Laser recording medium
JPS62279533A (en) * 1986-05-28 1987-12-04 Toshiba Corp Optical recording medium
JPS6339387A (en) * 1986-08-05 1988-02-19 Toray Ind Inc Optical recording medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04146188A (en) * 1990-10-09 1992-05-20 Matsushita Electric Ind Co Ltd Optical information recording medium and manufacture thereof
WO2000039794A1 (en) * 1998-12-25 2000-07-06 Teijin Limited Phase change-type optical recording medium and process for manufacturing the same

Also Published As

Publication number Publication date
JPH0825338B2 (en) 1996-03-13

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