JPH0251891A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPH0251891A JPH0251891A JP63199903A JP19990388A JPH0251891A JP H0251891 A JPH0251891 A JP H0251891A JP 63199903 A JP63199903 A JP 63199903A JP 19990388 A JP19990388 A JP 19990388A JP H0251891 A JPH0251891 A JP H0251891A
- Authority
- JP
- Japan
- Prior art keywords
- cas
- light
- energy
- emitting
- red
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 3
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 claims abstract description 13
- 239000011159 matrix material Substances 0.000 claims abstract 3
- 229910052684 Cerium Inorganic materials 0.000 abstract description 6
- 229910052777 Praseodymium Inorganic materials 0.000 abstract description 6
- 229910052775 Thulium Inorganic materials 0.000 abstract description 6
- 239000002772 conduction electron Substances 0.000 description 8
- 239000012190 activator Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜EL素子の発光層の材料構成に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a material structure of a light emitting layer of a thin film EL device.
従来、CaS:Eu赤色EL素子の輝度の応答が遅い点
については、アプライド フイジツクスレターズ、50
(1987)第641ページから第643ページ(A
pplied Physics Letters旦立p
、p、641〜643 (1987))において論じら
れている。Regarding the slow luminance response of conventional CaS:Eu red EL elements, see Applied Physics Letters, 50.
(1987) pages 641 to 643 (A
pplied Physics Letters
, p. 641-643 (1987)).
上記従来技術では、駆動開始後輝度が飽和値に達するの
に要する時間(以下応答時間と呼ぶ)については考慮さ
れていなかった。一般にEL素子は、伝導電子が交流駆
IJjJ電圧により、絶縁層に挟まれた発光層を往復運
動する間に、発光中心を直接衝突励起することにより発
光する。この発光機構でCaS:EuEL素子の発光中
心Euを励起するのに、実用駆動周波数である6 0
Hzの交流対称パルス波形で駆動した場合、応答時間が
数秒から数十秒要する。これでは駆動に対してリアルタ
イムで応答することが要求される動画表示のフルカラー
ELデイスプレィ用赤色発光材料としてCaS:Euを
用いることができないという問題点があった。The above-mentioned conventional technology does not take into account the time required for the luminance to reach the saturation value after the start of driving (hereinafter referred to as response time). In general, an EL element emits light by direct collision excitation of a luminescent center while conduction electrons reciprocate in a luminescent layer sandwiched between insulating layers by an AC driving IJjJ voltage. In order to excite the luminescent center Eu of the CaS:EuEL element with this luminescent mechanism, the practical driving frequency is 60
When driven with a Hz AC symmetrical pulse waveform, the response time takes several seconds to several tens of seconds. This poses a problem in that CaS:Eu cannot be used as a red light-emitting material for a full-color EL display for displaying moving images, which requires real-time response to driving.
本発明の目的は、CaS:Eu赤色EL素子の応答時間
を減少させることにある。The purpose of the present invention is to reduce the response time of CaS:Eu red EL devices.
上記目的はCaS:Eu発光層にEuの他にCe、Pr
、TmなどCaS:Euに強く吸収される光を放出する
元素を添加することにより達成される。The above purpose is to add Ce and Pr in addition to Eu to the CaS:Eu light emitting layer.
, Tm, etc., which emit light that is strongly absorbed by CaS:Eu.
CaS : EuEL素子において発光層中を流れる伝
導電子によりEuを直接励起する場合、伝導電子のエネ
ルギーは約4eV、Euの励起に必要なエネルギーは約
1.9 eVであるから伝導電子は約2.1 eV
のエネルギーを発光層中で散逸した後にEuを励起する
。CaS:Euにおいて約2.1 eVのエネルギー
を散逸する過程が少ないため伝導電子がEuを励起する
までに時間を要し輝度の応答時間が長くなると考えられ
ている。CaS: When Eu is directly excited by conduction electrons flowing in the light-emitting layer in an EuEL device, the energy of the conduction electrons is about 4 eV, and the energy required to excite Eu is about 1.9 eV, so the energy of the conduction electrons is about 2. 1 eV
Eu is excited after dissipating the energy in the light emitting layer. In CaS:Eu, there are few processes to dissipate energy of about 2.1 eV, so it takes time for conduction electrons to excite Eu, and it is thought that the brightness response time becomes longer.
一方Euの共付活剤となるPr、Ce、Tmなどを励起
するのに必要なエネルギーは2.3 eV〜2.6
eVであり約4eVのエネルギーを持つ伝導電子がこ
れら共付活剤を励起するのに散逸すべきエネルギーは1
,4〜1.7eVとEuを直接励起するために散逸すべ
きエネルギーよりも低いため、伝導電子がPr、Ce、
Tmなどを励起するのに要する時間は一般に短いと考え
られ、実験的にもCaS:Pr、Ca、S:Ce、Ca
S:TmEL素子の駆動周波数60Hzにおける応答時
間は約10m5と短い。On the other hand, the energy required to excite Eu co-activators such as Pr, Ce, and Tm is 2.3 eV to 2.6
eV, and the energy that a conduction electron with an energy of about 4 eV must dissipate to excite these coactivators is 1
, 4 to 1.7 eV, which is lower than the energy that must be dissipated to directly excite Eu.
The time required to excite Tm, etc. is generally considered to be short, and experimentally, CaS:Pr, Ca, S:Ce, Ca
The response time of the S:TmEL element at a driving frequency of 60 Hz is as short as about 10 m5.
一方CaS:EuEL素子はエネルギー範囲2.3〜2
,6eV(波長範囲440〜480nm)の光を強く吸
収しこれは丁度Pr+ Ce、Tmなどが放出する光の
エネルギーに一致する。従ってCaS:EuEL素子の
CaS:Eu発光層にPr、Ce、Tmなどを共付活剤
として添加することにより、CaS:EuEL素子の応
答時間が従来の数s〜数十Sから、10 m s 〜1
00 m sまで短くなるのは、伝導電子がEuを直接
励起する形で発光が生じるのではなく、伝導電子は共付
活剤であるPr、Ce、Tmなどを励起し、これらが放
出する光がEuを励起する形で発光が生じるためと考え
られる。On the other hand, CaS:EuEL devices have an energy range of 2.3 to 2
, 6eV (wavelength range 440-480nm), which corresponds to the energy of light emitted by Pr+Ce, Tm, etc. Therefore, by adding Pr, Ce, Tm, etc. as co-activators to the CaS:Eu light emitting layer of the CaS:EuEL device, the response time of the CaS:EuEL device can be reduced from the conventional several seconds to tens of seconds to 10 ms. ~1
The reason why the light emission is shortened to 00 m s is that the conduction electrons do not directly excite Eu to emit light, but the conduction electrons excite the co-activators Pr, Ce, Tm, etc., and the light emitted by them. This is thought to be because light emission occurs when Eu is excited.
以下、本発明の一実施例を図を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例であるCaS:EuEL素子
の断面清適を示した図である。ガラス基板1 (例えば
Corning# 7059 )上にITOからなる透
明電極2を蒸着する。その上に例えばTazo5などか
らなる透明な下部絶縁層3を高周波スパッタリング法な
どで厚さ約0.5 μm蒸着する。さらにその上に、
Euを0 、3 mo1%、共付活剤としてCeをQ
、 l mo1%含んだCaSからなる発光ff4を電
子ビーム蒸着法などにより厚さ約1.0 μm蒸着する
。共付活剤はCe以外に。FIG. 1 is a diagram showing a cross-sectional view of a CaS:EuEL device according to an embodiment of the present invention. A transparent electrode 2 made of ITO is deposited on a glass substrate 1 (for example, Corning #7059). A transparent lower insulating layer 3 made of Tazo 5 or the like is deposited thereon to a thickness of about 0.5 μm by high frequency sputtering or the like. Furthermore, on top of that
Eu as 0.3 mo1%, Ce as co-activator Q
, l A light emitting ff4 made of CaS containing 1% of mole is deposited to a thickness of about 1.0 μm by electron beam evaporation or the like. The co-activator is other than Ce.
Pr、TmなどCaS中でEL発光しその発光スペクト
ルのエネルギーが約2.3〜2.6eVの範囲内にある
元素であればなんでも良い。さらにその上に例えばTa
zObなどからなる上部絶縁層5を高周波スパッタリン
グ法などで厚さ約0.5μm蒸着する。最後にその上に
Affなどからなる背面電極を蒸着する。Any element, such as Pr or Tm, may be used as long as it emits EL light in CaS and the energy of its emission spectrum is within the range of about 2.3 to 2.6 eV. Furthermore, for example, Ta
An upper insulating layer 5 made of zOb or the like is deposited to a thickness of about 0.5 μm by high frequency sputtering or the like. Finally, a back electrode made of Aff or the like is deposited thereon.
第2図は本発明の一実施例のCa、S:EuEL素子の
駆動周波数60 Hzにおける輝度応答時間の電圧依存
性を示した図である。横軸の電圧は発光開始電圧から肥
った電圧で示している。図に示す様に従来のCaS発光
層にEuを0 、3 mo1%だけ含んだEL素子の応
答時間は数S〜数十Sであるのに対して、CaS発光層
にEu0.3IIlo1%に加えてCeを0.01.m
o1%添加した結果応答時間は10m5〜100 m
sまで減少させることができた。FIG. 2 is a diagram showing the voltage dependence of the luminance response time at a driving frequency of 60 Hz of a Ca,S:EuEL element according to an embodiment of the present invention. The voltage on the horizontal axis is shown as an increase in voltage from the emission start voltage. As shown in the figure, the response time of a conventional EL device containing only 0.3 mo1% of Eu in the CaS light emitting layer is several S to several tens of S, whereas Ce is 0.01. m
As a result of adding o1%, the response time is 10m5 to 100m
It was possible to reduce it to s.
本発明によれば従来問題となったCaS:EuEL素子
の輝度応答時間を駆動周波数60 Hzにおいて数S〜
数十Sから動画表示のフルカラーE Lデイスプレィ用
赤色発光材料として要求される10m5〜100m5ま
で短縮する効果がある。According to the present invention, the luminance response time of the CaS:EuEL element, which has been a problem in the past, can be reduced to several S at a driving frequency of 60 Hz.
It has the effect of shortening the length from several tens of S to 10m5 to 100m5, which is required as a red light emitting material for a full color EL display for displaying moving images.
第1図は本発明の一実施例を示す図、第2図は本発明の
一実施例の素子の輝度応答時間に対する効果を示す図で
ある。
1・・ガラス基板、2・・・透明電極、3・・・下部絶
縁層。
・発光層。
5・・・上部絶縁層、
・背面電極。
第
図
第
図FIG. 1 is a diagram showing one embodiment of the present invention, and FIG. 2 is a diagram showing the effect on the luminance response time of the element according to one embodiment of the present invention. 1... Glass substrate, 2... Transparent electrode, 3... Lower insulating layer.・Light-emitting layer. 5... Upper insulating layer, - Back electrode. Figure Figure
Claims (1)
縁層で挟み、該絶縁層の表面に設けた電極を通して発光
層に交流電圧を印加することにより発光する赤色発光E
L素子において、CaS母体中に発光中心Euの他にC
e,Pr,TmなどCaS中でEL発光しその放出する
光のエネルギーがCaS:Euが強く吸収する約2.3
〜2.6eVの範囲内にある元素を添加したことを特徴
とする薄膜EL素子。1. A red light-emitting E that emits light by sandwiching a light-emitting layer consisting of a matrix material CaS and a luminescent center Eu between insulating layers and applying an alternating current voltage to the light-emitting layer through an electrode provided on the surface of the insulating layer.
In the L element, in addition to the emission center Eu, there is C in the CaS matrix.
e, Pr, Tm, etc. emit EL in CaS, and the energy of the emitted light is strongly absorbed by CaS:Eu, about 2.3
A thin film EL device characterized in that an element within the range of ~2.6 eV is added.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63199903A JPH0251891A (en) | 1988-08-12 | 1988-08-12 | Thin film el element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63199903A JPH0251891A (en) | 1988-08-12 | 1988-08-12 | Thin film el element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0251891A true JPH0251891A (en) | 1990-02-21 |
Family
ID=16415517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63199903A Pending JPH0251891A (en) | 1988-08-12 | 1988-08-12 | Thin film el element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0251891A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6876146B2 (en) | 2002-03-26 | 2005-04-05 | Tdk Corporation | Electroluminescence phosphor multilayer thin film and electroluminescence element |
US6939482B2 (en) | 2002-09-20 | 2005-09-06 | Tdk Corporation | Phosphor thin film, manufacturing method of the same, and electroluminescent panel |
US6942932B2 (en) | 2002-02-13 | 2005-09-13 | Tdk Corporation | Phosphor and EL panel |
US6984460B2 (en) | 2002-03-26 | 2006-01-10 | Tdk Corporation | Phosphor thin film, manufacturing method of the same, and electroluminescence panel |
US8466615B2 (en) | 2003-02-28 | 2013-06-18 | Ifire Ip Corporation | EL functional film and EL element |
-
1988
- 1988-08-12 JP JP63199903A patent/JPH0251891A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6942932B2 (en) | 2002-02-13 | 2005-09-13 | Tdk Corporation | Phosphor and EL panel |
US6876146B2 (en) | 2002-03-26 | 2005-04-05 | Tdk Corporation | Electroluminescence phosphor multilayer thin film and electroluminescence element |
US6984460B2 (en) | 2002-03-26 | 2006-01-10 | Tdk Corporation | Phosphor thin film, manufacturing method of the same, and electroluminescence panel |
US6939482B2 (en) | 2002-09-20 | 2005-09-06 | Tdk Corporation | Phosphor thin film, manufacturing method of the same, and electroluminescent panel |
US8466615B2 (en) | 2003-02-28 | 2013-06-18 | Ifire Ip Corporation | EL functional film and EL element |
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