JPH0235297B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial application field] The present invention uses light (light in a broad sense here, including ultraviolet rays,
(visible light, infrared rays, X-rays, gamma rays, etc.)
Regarding electrophotographic light-receiving members sensitive to magnetic waves
Ru. For more details, see Coherence of laser light etc.
Regarding electrophotographic light-receiving members suitable for using light
do. [Conventional technology] How to record digital image information as an image and
The laser is modulated according to the digital image information.
– By optically scanning the light-receiving member with light
Form an electrostatic latent image, then develop the latent image, if necessary.
Perform processing such as transfer and fixing accordingly, and record the image.
The method of recording is well known. Especially electronic photography
In the image forming method using the method, the laser
Small and inexpensive He-Ne laser or semiconductor laser
laser (usually has an emission wavelength of 650-820nm)
It is common to record images using . Especially when using a semiconductor laser,
As a light-receiving member for child photography, its light sensitivity range
The consistency is much higher than that of other types of light-receiving materials.
In addition to being superior, it has a high Bitkers hardness.
In terms of being non-polluting from a social perspective, for example,
Disclosed in Publication No. 86341 and Japanese Unexamined Patent Publication No. 56-83746.
Amorphous material containing silicon atoms (hereinafter referred to as "A")
A light-receiving member made of
It is. However, the photoreceptive layer is an A-Si layer with a single layer structure.
While maintaining its high light sensitivity, it can be used for electrophotography.
10 required¹²To ensure dark resistance of Ωcm or more
is a hydrogen atom, a silicon atom, or in addition to these
Boron atoms are controlled in a specific amount range in the layer.
Because it is necessary to structurally contain the
It is necessary to strictly control the formation, etc.
Significant limitations on tolerances in the design of light-receiving components
There is. There are blockages that can expand this design tolerance.
Effectively utilizes high light sensitivity even with low dark resistance
Examples of things that have been made available include:
Publication No. 54-121743, Japanese Unexamined Patent Publication No. 57-4053, Special
Photoreception as described in Japanese Patent No. 57-4172
Two or more layers with different conductive properties
As a structure, a depletion layer is formed inside the photoreceptor layer.
or JP-A-57-52178, JP-A No. 52179, JP-A No. 57-52178,
Publication No. 52180, No. 58159, No. 58160, No. 58161
As described in the report, between the support and the photoreceptive layer,
or/and a barrier layer is provided on the upper surface of the photoreceptive layer.
Increase the apparent dark resistance by creating a multilayer structure.
A light-receiving member has been proposed. Through such proposals, A-Si light receiving members
In its commercialization design tolerances or manufacturing
Dramatic progress has been made in ease of management and productivity.
The speed of development toward commercialization is accelerating.
ing. This kind of light-receiving layer uses a light-receiving member with a multilayer structure.
When performing laser recording with
Because of this, laser light is coherent monochromatic light.
Therefore, the free surface of the laser beam irradiation side of the photoreceptive layer, the light
Each layer constituting the receptor layer and the relationship between the support and the light receptor layer
Layer interface (hereinafter, both this free surface and layer interface will be referred to as
It is reflected from the ``interface''.
Each of the reflected lights may cause interference. This interference phenomenon occurs in the visible image formed.
So-called interference fringes appear and cause image defects.
This is especially true for mid-tone images with high gradation.
When forming a
Ru. Furthermore, the wavelength range of the semiconductor laser light used
As the wavelength becomes longer, the laser in the photosensitive layer
As the light absorption decreases, the above-mentioned interference phenomenon becomes noticeable.
Author: This point will be explained with reference to the drawings. Fig. 1 shows the light-receiving layer of the light-receiving member.
The light incident on the layer I₀reflected at the upper interface 102.
Reflected light R₁, the reflected light R reflected at the lower interface 101₂
It shows. The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is λ.
As, the thickness of a certain layer is gradually λ/2n or more. If the thickness is uneven due to the difference in thickness, the reflected light R₁,R₂is 2nd=
mλ (m is an integer, reflected light strengthens each other) and 2nd = (m
+1/2) λ (m is an integer, reflected light weakens each other) conditions
The amount of light absorbed by a certain layer and
and changes in the amount of transmitted light. In a light receiving member with a multilayer structure, as shown in FIG.
Interference effects occur in each layer, as shown in Figure 2.
A synergistic negative effect of each interference occurs. So
Therefore, the interference fringes corresponding to the interference fringe pattern are transferred to the transfer member.
A defective image appears on the visible image transferred and fixed on top.
It was the cause of the statue. As a way to solve this inconvenience, the support surface
Diamond cutting the surface to ±500Å to ±10000Å
A method of forming a light scattering surface with unevenness (e.g.
JP-A-58-162975), aluminum support
The surface is treated with black alumite or coated with resin.
Carbon, colored pigments, and dyes are dispersed in the
Method of providing an absorbing layer (for example, Japanese Patent Application Laid-open No. 165845/1983)
Publication), the surface of the aluminum support is made of satin-like aluminum.
Sand grains can be removed by mite treatment or sandblasting.
Light scattering is achieved by providing microscopic irregularities on the surface of the support.
A method of providing an anti-diffuse reflection layer (for example, JP-A-57-
16554) etc. have been proposed. However, with these conventional methods,
It is not possible to completely eliminate the interference fringe pattern caused by
Ivy. That is, the first method is to apply a specific size to the surface of the support.
It is true that there are many uneven surfaces, so the light
What can be done to prevent the appearance of interference fringes due to scattering effects?
However, the specular reflected light component still accounts for light scattering.
Because there is currently an interference fringe pattern caused by the specularly reflected light,
In addition to remaining light, light scattering on the surface of the support
Due to the scattering effect, the irradiation spot spreads, and the
This caused a decrease in resolution. The second method is at the level of black alumite treatment,
Complete absorption is impossible, and the light reflected on the surface of the support
remains. In addition, when providing a colored pigment-dispersed resin layer,
When forming the A-Si layer, degassing from the resin layer
The layer quality of the photoreceptive layer that is formed is markedly affected.
plasma when the resin layer forms A-Si.
Due to damage caused by heat, the original absorption function is lost.
In addition to reducing the
adversely affecting the formation of the A-Si photosensitive layer, etc.
There are some inconveniences. In the case of the third method of irregularly roughening the support surface
For example, as shown in Fig. 3, the incident light I₀is a light receiver
A part of the light is reflected on the surface of the layer 302 and becomes reflected light.
R₁The rest advances into the inside of the photoreceptive layer 302.
Transmitted light I₁becomes. Transmitted light I₁is the support 30
On the surface of 2, some of the light is scattered and expanded.
Scattered light K₁,K₂,K₃...and the rest is specularly reflected.
reflected light R₂, and a part of it is the emitted light R₃Tonatsu
and go outside. Therefore, the reflected light R₁interfere with
Outgoing light R, which is a component of₃remains, so it is still
Therefore, the interference fringe pattern cannot be completely erased. It also prevents interference and multiple reflections inside the light-receiving layer.
In order to prevent
When added, light is diffused within the photoreceptive layer and Haleshi
There is also the disadvantage that the resolution decreases due to the generation of shadows.
Ivy. In particular, in a multilayered light receiving member, the fourth
As shown in the figure, the surface of the support 401 is irregularly
Even if it is roughened, the reflected light R on the surface of the first layer 402₂，
Reflected light R on the second layer₁, right opposite on the support body 401 side
Radiation R₃interfere with each other to reduce the thickness of each layer of the light-receiving member.
Accordingly, an interference fringe pattern occurs. Therefore, multi-layer
In the light-receiving member having the structure, the surface of the support 401
By roughening the surface irregularly, interference fringes cannot be completely prevented.
It was impossible. In addition, the surface of the support may be coated by methods such as sandblasting.
When roughening a surface irregularly, the roughness will vary between lots.
There is a lot of variation in
However, the surface roughness is uneven, making it difficult to manage manufacturing.
It was bad. In addition, relatively large protrusions appear randomly.
These large protrusions are often formed when exposed to light.
causing localized breakdown of the receptive layer.
Ta. Alternatively, if the support surface 501 is simply roughened regularly,
In this case, as shown in FIG.
A photoreceptive layer 502 is deposited along the uneven shape of
Therefore, the uneven slope surface of the support 501 and the light-receiving layer 5
The inclined surface of the unevenness of 02 becomes parallel. Therefore, in that part, the incident light is 2nd₁= mλ
or 2nd₁= (m+1/2)λ is established, and the bright area and
or the dark side. In addition, in the entire photoreceptive layer, the photoreceptive layer
layer thickness d₁,d₂,d₃,d_FourThe maximum of the differences between
It is clear that there is non-uniformity in the layer thickness, which is greater than λ/2n. Dark stripes appear. Therefore, the surface of the support 501 is regularly roughened.
However, it is not possible to completely prevent the occurrence of interference fringes.
I can't. In addition, a multilayer structure is formed on a support whose surface is regularly roughened.
Even when a photoreceptive layer of
The surface of the support described for the single-layer light-receiving member
The interaction between the specularly reflected light and the reflected light on the surface of the photoreceptive layer.
In addition to interference caused by reflected light at the interface between each layer,
Because of the interference fringe pattern of the light-receiving member of the single-layer structure,
It becomes more complicated than the degree of expression. [Purpose of the invention] The object of the present invention is to eliminate the above-mentioned drawbacks and to
To provide a new light-receiving member for electrophotography with photoreceptivity.
Is Rukoto. Another object of the invention is to use coherent monochromatic light.
A power source that is suitable for image formation and easy to manage in manufacturing.
An object of the present invention is to provide a light-receiving member for child photography. Yet another object of the present invention is to
At the same time, the appearance of interference fringes and spots during reversal development can be realized simultaneously.
What's more, electrophotographic light can be completely eliminated.
It is also a matter of providing a receiving member. Another object of the present invention is to utilize electrophotography to
Digital image recording, especially halftone information
Clear and high-resolution digital image recording with information
Provide high-quality light-receiving materials for electrophotography
It's also something to do. Yet another object of the present invention is high photosensitivity,
High signal-to-noise ratio characteristics and good electrical connection between supports
To provide a light-receiving member for electrophotography that has tactile properties.
It is also said. Another object of the present invention is to achieve the above-mentioned excellent properties.
In addition, durability, continuous repeatability, and electrical withstand voltage
properties, usage environment characteristics, mechanical durability and light reception characteristics
By providing excellent light-receiving materials for electrophotography,
There is also. [Summary of the invention] The light-receiving member for electrophotography of the present invention (hereinafter referred to as "light-receiving member")
(referred to as "container parts") are Cross-sectional shape at predetermined cutting position is 0.3μm to 500μm
Main peak with maximum depth of 0.1μm to 5μm in pitch
Many convex parts with convex shapes with superimposed peaks are displayed.
a support formed on the surface; Silicon atoms, germanium atoms, hydrogen atoms and
and/or silicon atoms.
The first layer formed by silicon atoms, hydrogen atoms and
and/or silicon atoms.
The second layer formed by silicon atoms and carbon atoms
and a surface layer composed of an amorphous material containing
a photoreceptive layer; has At least one of the first layer and the second layer
On the other hand, it also contains a substance that controls conductivity, and this substance is
The distribution state of the substance in the containing layer region is determined by the layer thickness.
In addition to being non-uniform in the direction, The germanium source contained in the first layer
The distribution of children is uneven in the layer thickness direction, The photoreceptive layer has at least a portion within the short range.
characterized by having one or more pairs of non-parallel interfaces
Ru. The present invention will be explained in detail below with reference to the drawings.
Ru. FIG. 6 is a diagram for explaining the basic principle of the present invention.
It is an explanatory diagram. In the present invention, the resolution is smaller than the required resolution of the device.
On a support (not shown) having a concave and convex shape,
It has a multi-layered light-receiving layer along the convex inclined surface,
As shown enlarged in FIG. 6A, the second layer 60
2 layer thickness d_Fivefrom d₆Because it changes continuously,
The interface 603 and the interface 604 have a tendency toward each other.
ing. Therefore, this minute part
The coherent light incident on
interference occurs, producing minute interference fringe patterns. Moreover, as shown in FIG. 7, the first layer 701 and the second layer 7
02 interface 703 and the free surface 70 of the second layer 702
4 are non-parallel, the input is as shown in A in Figure 7.
Light I₀Reflected light R₁and output light R₃and its progression
Since the directions are different from each other, the interfaces 703 and 704 are flat.
(The degree of interference is lower than “B” in Figure 7)
Decrease. Therefore, as shown in Figure 7C, the pair of interfaces
If the relationship is parallel, A is less parallel than B is if the relationship is non-parallel.
Even if there is interference, the difference in brightness of the interference fringe pattern can be ignored.
becomes smaller over time. As a result, the amount of incident light on a minute part
are averaged. This means that the second layer 602, as shown in FIG.
The layer thickness is macroscopically non-uniform (d₇≠d₈) but the same
Therefore, the amount of incident light becomes uniform in the entire layer area.
(See “D” in Figure 6). In addition, when the photoreceptive layer has a multilayer structure,
When coherent light is transmitted from the emission side to the second layer
To describe the effects of the present invention, as shown in Fig. 8.
, the incident light I₀For, the reflected light R₁,R₂,R₃,R_Four，
R_Fiveexists. Therefore, each layer has Figure 7.
What has been explained above occurs. Moreover, each layer interface within a microscopic part is a kind of slip
It acts as a tube and causes diffraction development there. the
Therefore, interference in each layer is due to interference due to difference in layer thickness and layer boundary.
The effect appears as a product of interference due to surface diffraction.
Ru. Therefore, when considering the entire photoreceptive layer, the interference is
According to the present invention, the light receiving
As the number of layers that make up the storage layer increases, the
Layer interference effects can be prevented. In addition, interference fringes that occur within a minute part are
Since the size of the spot is smaller than the diameter of the irradiated light spot,
However, it appears in the image because it is smaller than the resolution limit.
There isn't. Also, even if it appears in the image, the eye
Since it is less than the resolution of
stomach. In the present invention, the uneven inclined surface directs reflected light in one direction.
It is preferable to have a mirror finish to ensure alignment.
Delicious. The size of the minute part (uneven shape) suitable for the present invention
(for one cycle), let L be the spot diameter of the irradiated light.
If, ≦L. Moreover, in order to achieve the purpose of the present invention more effectively,
is the difference in layer thickness (d_Five−d₆) is the light
If the wavelength of the emitted light is λ, then d_Five−d₆≧λ/2n (n: refractive index of the second layer 602) It is desirable to have one. In the present invention, microscopic portions of a multilayered photoreceptive layer
(hereinafter referred to as "microcolumn") within a layer thickness of
At least any two layer interfaces are non-parallel.
As shown in the relationship, the layer thickness of each layer is within the microcolumn.
However, if this condition is satisfied, the minute
Any two layer interfaces in the column are parallel
It's okay if it's hot. However, the layers forming the parallel layer interface can be any two layers.
The difference in layer thickness at two positions is λ/2n (n: refractive index of layer) The layer is formed with a uniform thickness in the entire area as shown below.
It is desirable that Silicon atoms and germanium that make up the photoreceptive layer
A first layer containing silicon atoms and a second layer containing silicon atoms.
The purpose of the present invention can be more effectively and
Optical precision of layer thickness for easy achievement
Plasma vapor phase method (PCVD)
method), optical CVD method, and thermal CVD method. Method for processing a support to achieve the object of the present invention
For example, chemical etching, electroplating, etc.
Physical methods such as chemical methods, vapor deposition, and sputtering
Mechanical methods such as machining and lathe machining can be used.
Ru. However, in order to easily manage production, lathes
Mechanical processing methods such as these are preferred. For example, when machining the support with a lathe, etc.,
As shown in Fig. 46, a bib with a V-shaped cutting edge is used.
Rub it with diamond powder to give it the desired shape.
Cutting tool 1 with a sharp cutting edge is used on a milling machine, lathe, etc.
Fixed in a predetermined position on a cutting machine, for example cylindrical
A program in which the support is designed in advance according to the desired
Move regularly in a specified direction while rotating according to
The support surface can be precisely cut by
By doing this, the desired uneven shape, pitch, and depth can be formed.
be done. Formed by this cutting method
The linear protrusions created by the unevenness are inside the cylindrical support.
It has a spiral structure centered on the central axis. protruding thread
The line structure can be double, triple, multi-spiral, or crossed.
There is no problem even if it has a spiral structure. Or, in addition to the spiral structure, a straight line along the central axis
A structure may be introduced. The convex portion within a predetermined cross section of the support of the present invention is
In order to increase the effectiveness of
Therefore, it is preferable to have the same shape in a first-order approximation.
stomach. In addition, in order to enhance the effect of the present invention, the convex portion
Preferably arranged regularly or periodically.
Delicious. Furthermore, the convex portion can achieve the effects of the present invention.
further enhances the adhesion between the photoreceptive layer and the support.
Therefore, it is preferable to have a plurality of sub-peaks. In addition to each of these, it is possible to efficiently direct incident light to one side.
In order to scatter in the direction, the convex portion is centered around the main peak.
Symmetrical (Figure 9A) or asymmetrical (Figure 9B)
It is preferable that they be unified. However, support
Both are mixed to increase the degree of freedom in body processing control.
It's good to be doing that. In the present invention, the surface of the support is controlled in a controlled manner.
Each dimension of unevenness provided in the
Taking these points into consideration, the purpose of the present invention can be effectively achieved.
It is set up so that it can be done. That is, firstly, the A-Si layer constituting the photoreceptive layer
is structurally sensitive to the state of the surface on which the layer is formed.
Therefore, the layer quality varies greatly depending on the surface condition. Therefore, the layer quality of the A-Si layer does not deteriorate.
The irregularities provided on the surface of the support are similar to
You need to set the Second, the free surface of the photoreceptor layer has extreme irregularities.
When cleaning after image formation,
You will not be able to perform the process completely. Also, when cleaning the blade,
There is a problem in that the board becomes damaged more quickly. The above-mentioned layer deposition problems and the electrophotographic process
problems with access and conditions to prevent interference fringes.
As a result of the study, the pitch of the recesses on the surface of the support was found to be suitable.
Preferably 500 μm to 0.3 μm, more preferably 200 μm
~1μm, optimally 50μm ~ 5μm is desirable.
stomach. Also, the maximum depth of the recess is preferably 0.1 μm to 5 μm.
m, more preferably 0.3μm to 3μm, optimally 0.6μm
It is desirable that the thickness is between m and 2 μm. on the support surface
If the pitch and maximum depth of the recess are within the above range,
In this case, the slope of the slope of the recess (or linear protrusion) is
Preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees
degree, optimally 4 degrees to 10 degrees. Also, the layer thickness of each layer deposited on such a support
The maximum difference in layer thickness due to the non-uniformity of
Preferably 0.1 μm to 2 μm, more preferably 0.1 μm
~1.5μm, optimally 0.2μm ~ 1μm.
Delicious. Furthermore, the light-receiving layer in the light-receiving member of the present invention is
Amorphous containing silicon atoms and germanium atoms
a first layer composed of a material and containing silicon atoms;
A second layer composed of an amorphous material and exhibiting photoconductivity
and a surface layer are provided in order from the support side.
The gel in the first layer is
The distribution state of manium atoms is non-uniform in the layer thickness direction.
with excellent electrical, optical, and
Indicates conductive properties, electrical voltage resistance, and usage environment characteristics.
vinegar. In particular, it has been applied as a light-receiving member for electrophotography.
In some cases, the residual potential has no effect on image formation.
Its electrical characteristics are stable, high sensitivity, and high
It has a signal-to-noise ratio and is resistant to light fatigue and repeated use.
Good usage characteristics, high density, and vivid halftones.
Stable, clear, high-resolution, high-quality images
can be obtained repeatedly. Furthermore, the light-receiving member of the present invention can absorb light in the entire visible light region.
It has high photosensitivity, especially at long wavelengths.
Because of its excellent thermal characteristics, it is especially suitable for semiconductor lasers.
It has excellent matching and fast photoresponse. Hereinafter, according to the drawings, the light receiving member of the present invention will be explained.
This will be explained in detail. FIG. 10 shows a light receiving member according to an embodiment of the present invention.
The schematic diagram shown schematically to explain the layer structure of
FIG. The light receiving member 1004 shown in FIG.
A light-receiving layer is provided on the support 1001 for the member.
It has 1000. The light-receiving layer 1000 is coated with gel from the support 1001 side.
Manium atoms and optionally hydrogen atoms or/and
a-Si (hereinafter referred to as
(abbreviated as “a-SiGe(H,X)”)
First layer G1002 and hydrogen atoms or
is/and a-Si containing halogen atom X (hereinafter referred to as
(abbreviated as “a-Si(H,X)”)
A second layer S1003 having conductivity and a surface layer 1
It has a layer structure in which 005 and 005 are laminated in order (here
(X represents a halogen atom). first layer G
The germanium atoms contained in 1002 are
The first layer G1002 is continuous in the layer thickness direction.
and the side on which the support body 1001 is provided.
is the opposite side (surface layer 1005 of photoreceptive layer 1000)
side) on the support body 1001 side.
The first layer G100 is distributed so as to have a uniform distribution.
Contained in 2. In the light receiving member of the present invention, in the first layer G,
The distribution state of germanium atoms contained in the layer is
In the thickness direction, the distribution state is as described above,
Uniform distribution in the in-plane direction parallel to the support surface
It is desirable that the In the present invention, provided on the first layer G
The second layer S contains no germanium atoms.
The photoreceptive layer is formed in such a layered structure.
In particular, relatively short wavelengths including the visible light region
For light of all wavelengths from to relatively long wavelengths
Obtained as a light-receiving material with excellent photosensitivity.
be. Furthermore, germanium atoms in the first layer G
The distribution state is that germanium atoms are continuous in the entire layer area.
distribution of germanium atoms in the layer thickness direction.
degree C decreases from the support side towards the second layer S
Since the change is given, the first layer G and the second layer G
It has excellent affinity with layer S and will be described later.
Similarly, the germanium atoms at the end of the support
By extremely increasing the distribution concentration C, semiconductor
In the second layer S when a body laser etc. are used, almost no
The light on the long wavelength side that cannot be fully absorbed is placed in the first layer G.
It is virtually completely absorbable and supports
Interference due to reflection from the body surface can be prevented.
Ru. Further, in the light receiving member of the present invention, the first layer
Each of the amorphous materials forming G and the second layer S is
have a common component: silicon atoms
Therefore, chemical stability can be ensured at the laminated interface.
It is composed. FIG. 11 to FIG. 19 show the light in the present invention.
Germanium contained in the first layer G of the receiving member
A typical example of the distribution state of mu atoms in the layer thickness direction is shown.
Ru. In Figures 11 to 19, the horizontal axis is germanium.
The vertical axis represents the distribution concentration C of nium atoms in the first layer G.
indicates the layer thickness of t_Bis the end surface of the first layer G on the support side
the position of t_Tis the end surface of layer G on the opposite side from the support side
Indicates the location of That is, the content of germanium atoms
The first layer G is t_BT from the side_TLayer formation towards the side
It will be done. FIG. 11 shows the germanium contained in the first layer G.
First typical example of the distribution state of Ni atoms in the layer thickness direction
is shown. In the example shown in Figure 11, germanium atoms
The surface on which the first layer G containing
Interface position t in contact with the surface of layer G of 1_BMoret₁rank
Up to this point, the distribution concentration C of germanium atoms is C₁
Germanium atoms are formed while taking a certain value.
contained in the first layer G, located at the position t₁than concentration
C₂The interface position t_Tgradually and continuously decreasing until
has been done. Interface position t_Tgermanium in
The distribution concentration C of atoms is C₃It is said that In the example shown in Figure 12, it contains
The distribution concentration C of germanium atoms is at position t_BMore position
t_TConcentration C up to_Fourgradually and continuously decreasing from
position t_Tconcentration C at_FiveForm a distribution state such that
are doing. In the case of Figure 13, position t_BMore position₂to
is the distribution concentration C of germanium atoms is the concentration C₆and
It is assumed to be a constant value, and the position t₂and position t_TBetween
Gradually and continuously decreased, position t_TIn, the distribution
The concentration C is assumed to be substantially zero (here, substantially
Zero means that the amount is below the detection limit). In the case of Figure 14, the distribution of germanium atoms
Concentration C is at position t_BMore position_Tup to the concentration C₈Yo
is gradually decreased continuously, and the position t_Tin real terms
It is said to be zero. In the example shown in Figure 15, the germanium source
The distribution density C of the child is at the position t_Band position t₃in between
is the concentration C₉is a constant value, and the position t_TIt is dark in
degree C_TenIt is said that position t₃and position t_TThe distribution is between
The concentration C is linearly proportional to the position t₃More position_Tuntil
has been reduced. In the example shown in FIG. 16, the distribution concentration C
is position t_BMore position_Fouruntil the concentration C₁₁Take a constant value of
position t_FourMore position_Tuntil the concentration C₁₂More concentration C₁₃
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 17, the position t_BMore position
t_TUntil , the distribution concentration C of germanium atoms is
Concentration C₁₄linearly so that it more effectively reaches zero
is decreasing. In Figure 18, position t_BMore position_Fiveleading to
Until then, the distribution concentration C of germanium atoms is the concentration
C₁₅More concentration C₁₆is linearly decreased until the position
t_Fiveand position t_TBetween, the concentration C₁₆with a constant value of
An example is shown. In the example shown in Figure 19, germanium
The distribution concentration C of atoms is the position t_Bconcentration C at₁₇in
Yes, position t₆This concentration C until it reaches₁₇the beginning
is gradually decreased, and t₆around the position of
is sharply decreased at position t₆Then the concentration C₁₈considered to be
Ru. position t₆and position t₇At first, the relationship between
decreased, and then decreased slowly and gradually.
position t₇At concentration C₁₉and position t₇and position t₈between
Then, the position t is gradually decreased very slowly.₈
, the concentration C₂₀leading to. position t₈and position t_Tbetween
The concentration C₂₀Figure so that it becomes more substantially zero.
It is reduced according to a curve with a shape as shown in FIG. As described above, from FIGS. 11 to 19, the first layer
Germanium atoms contained in G in the layer thickness direction
As we have explained some typical examples of distribution states, the present invention
In the light, germanium is added on the support side.
It has a part with a high distribution concentration C of atoms, and the interface t_Tto the side
In this case, the distribution concentration C is relatively small compared to the support side.
germanium atom with a reduced portion
A distribution is provided in the first layer G. The light receiving layer constituting the receiving member in the present invention
The constituting first layer G is preferably supported as described above.
There is a relatively high concentration of germanium atoms on the support side.
It is desirable to have a localized region A containing
stomach. In the present invention, the localized region (A) is shown in FIGS.
To explain using the symbols shown in Figure 19, the interface position
Placement_TIt is preferable to set the distance within 5μ.
It is. In the present invention, the localized region (A) is located at the interface position.
t_BFull layer area up to 5μ thick (L_T)
Yes, there is also a layer region (L_T) if it is considered part of
There is also. The localized region (A) is transformed into a layered region (L_T) or as part of
Whether it should be all depends on the requirements of the photoreceptive layer to be formed.
It is determined as appropriate according to the characteristics to be used. The localized region (A) is the germanium contained therein.
Germanium elementary as the distribution state of atoms in the layer thickness direction
The maximum value Cmax of the distribution concentration of children is
and preferably 1000 atomic ppm or more, more preferably 1000 atomic ppm or more.
Suitably 5000 atomic ppm or more, optimally 1×
Ten^FourThe distribution state is such that it is more than atomic ppm.
It is desirable that the layer be formed in such a way that it can be easily removed. That is, in the present invention, germanium atoms
The first layer contained has a layer thickness from the support side.
Within 5μ (t_BThe maximum of the distribution concentration in the layer region of 5μ layer from
Preferably formed such that there is a value Cmax
It is something. In the present invention, the components constituting the formed photoreceptive layer are
The amount of hydrogen atoms (H) contained in the second layer S or
Amount of halogen atom (X) or hydrogen atom and halogen
The sum of the amounts of atoms (H+X) is preferably 1 to
40 atomic%, more preferably 5-30 atomic%, maximum
It is preferably 5 to 25 atomic%. In the present invention, the gel contained in the first layer
As for the content of manium atoms, the purpose of the present invention is
Decide as appropriate according to your wishes so that they can be effectively achieved.
but preferably 1 to 9.5×10^Fiveatomic ppm,
More preferably 100 to 8×10^Fiveatomic ppm, optimal
500 to 7×10^FivePreferably atomic ppm
It's something new. In the present invention, the first layer G and the second layer S
Thickness is determined by weight to effectively achieve the purpose of the present invention.
The light-receiving member formed because it is one of the important factors
The light-receiving member is
due care must be taken when designing the
Ru. In the present invention, the layer thickness T of the first layer G_BI like it
or 30 Å to 50 μ, more preferably 40 Å to 40 μ,
Optimally, the thickness is preferably 50 Å to 30 μ. Further, the layer thickness T of the second layer S is preferably 0.5 to
90μ, more preferably 1-80μ, optimally 2-50μ
It is desirable that Layer thickness T of first layer G_Band the layer thickness T of the second layer S
(T_B+T) is the characteristic required for both layer regions.
and the characteristics required for the entire photoreceptive layer.
Based on the mechanical relevance, when designing the layer of the photoreceptor material.
It is determined as appropriate according to desire. In the light receiving member of the present invention, the above (T_B
The numerical range of +T) is preferably 1 to
100μ, more preferably 1-80μ, optimally 2-50μ
It is desirable that this is done. In a more preferred embodiment of the present invention,
Above layer thickness T_BAnd the layer thickness T is preferably
T_B/T≦1, for each
It is desirable that appropriate values be selected accordingly. Layer thickness T in the above case_Band the value of layer thickness T
More preferably, T_B/T≦0.9,
Optimally T_B/T≦0.8 so that the relationship is satisfied
Layer thickness T_BIt is desirable that the values of the layer thickness T and the layer thickness T be determined.
It's a good thing. In the present invention, the gel contained in the first layer G
The content of rumanium atoms is 1×10^Fiveatomic ppm
In the above case, the layer thickness T of the first layer G_Bas,
It is desirable to make it fairly thin, preferably 30μ
or less, more preferably 25μ or less, optimally 20μ or less
It is desirable that it be placed at the bottom. In the present invention, a photoreceptive layer is configured as necessary.
The hydrogen contained in the first layer G and the second layer S
Specifically, the rogen atom (X) is
Chlorine, bromine, and iodine, especially
Chlorine and chlorine can be mentioned as suitable ones.
Ru. In the present invention, a-SiGe(H,X)
For example, glow discharge is used to form the first layer G.
method, sputtering method, or ion platey method.
By using a vacuum deposition method that utilizes a discharge phenomenon such as a
It will be done. For example, by the glow discharge method, a
- Forming the first layer G composed of SiGe(H,X)
Basically, silicon atoms (Si) are
Raw material gas and germanium atoms for Si supply that can be supplied
(Ge) and raw material gas for Ge supply and necessary
Raw material gas or/and for hydrogen atom (H) introduction depending on
The raw material gas for introducing halogen atoms (X) is
Introduce the desired gas pressure into the deposition chamber that can be reduced in pressure.
to generate a glow discharge in the deposition chamber, and
on a given support surface in place.
The distribution concentration of the contained germanium atoms can be adjusted to the desired concentration.
a-SiGe (H,
It is sufficient to form a layer consisting of X). Also, spats
When forming by the taring method, for example, Ar, He
or based on inert gases such as
Target composed of Si in a mixed gas atmosphere
Using two targets composed of and Ge,
or using a mixed target of Si and Ge.
When sputtering, add hydrogen atoms (H) as necessary.
Or/and the gas for introducing halogen atoms (X) is
It can be introduced into a deposition chamber for puttering. Raw material gas for supplying Si used in the present invention
SiH is a substance that can become_Four,Si₂H₆,Si₃H₈，
Si_FourH_TenSilicon hydride in a gaseous state such as
(silanes) are listed as being effectively used.
In particular, ease of handling during layer creation work and Si supply
SiH in terms of efficiency etc._Four,Si₂H₆, is preferable
It is mentioned as Substances that can be used as raw material gas for Ge supply include:
GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀gaseous such as
germanium hydride is effective
It is used for layer creation, especially for layer creation.
Ease of handling during work, good Ge supply efficiency, etc.
So, GeH_Four,Ge₂H₆,Ge₃H₈is preferred.
can be mentioned. For introducing halogen atoms used in the present invention
Many halogenated gases are effective as raw material gases for
For example, halogen gas, halogen
compounds, interhalogens, halogen-substituted
Gaseous or gasifiable materials such as silane derivatives
Preferred examples include rogene compounds. Furthermore, silicon atoms and halogen atoms
Constituent halves in a gaseous state or capable of being gasified
Silicon hydride compounds containing rogen atoms are also effective.
In the present invention, it can be mentioned as such. Halogen compounds that can be suitably used in the present invention
Specifically, the substances include fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF₃，
BrF_Five,BrF₃,IF₃,IF_Five, ICl, IBr, etc.
Intermediate compounds can be mentioned. Silicon compounds containing halogen atoms, so-called halogens
Examples of silane derivatives substituted with carbon atoms include
For example, SiF_Four,Si₂F₆,SiCl_Four, SiBr_Fouretc.
Silicon halogenide can be cited as a preferred option.
come. Adopts silicon compounds containing such halogen atoms
The characteristic light reception of the present invention is achieved by the glow discharge method.
When forming a container member, a raw material gas for Ge supply is used.
Hydrogenation as a raw material gas that can supply Si along with gas
onto the desired support without the use of silicon gas.
First layer made of a-SiGe containing halogen atoms
It is possible to form a G. According to the glow discharge method,
When creating layer G of 1, basically, for example, Si
Silicon halide and Ge as raw material gas for supply
germanium hydride, which is the raw material gas for supply;
Ar, H₂, He, etc., at a specified mixing ratio and gas flow.
in a deposition chamber in which the first layer G is formed in such a manner that the amount of
These gases are released by introducing a glow discharge.
By creating a lasma atmosphere, the desired support can be achieved.
Although the first layer G can be formed on the support,
To make it easier to control the ratio of hydrogen atoms introduced
In addition to these gases, add hydrogen gas or hydrogen source for measurement.
The desired amount of silicon compound gas containing carbon atoms is also mixed into the layer.
It may be formed. In addition, each gas can be used not only as a single species but also in a predetermined mixing ratio.
There is no problem even if a plurality of them are mixed and used. Reactive sputtering method or ion plate
a-SiGe (H,
To form layer G of 1, for example, sputtering
In the case of the method, a target consisting of Si and a target consisting of Ge are used.
two targets, or one consisting of Si and Ge.
Use the target to connect this to the desired gas plasma
sputtering in an atmosphere of
In the case of the ing method, for example, polycrystalline silicon or
is monocrystalline silicon and polycrystalline germanium or single crystal
Deposition boat using crystalline germanium and crystal germanium as evaporation sources, respectively.
This evaporation source can be heated using resistance heating method or electronic
Heated and evaporated by tron beam method (EB method) etc.
Pass the flying evaporates through the desired gas plasma atmosphere.
You can do it by letting it pass. At this time, sputtering method, ion plate
In both cases, halogen is present in the layer formed.
In order to introduce a ion atom, the above-mentioned halogen compound or
is the silicon compound gas containing the above halogen atom.
is introduced into the deposition chamber to create a plasma atmosphere of the gas.
It is a good idea to form it. In addition, when introducing hydrogen atoms, hydrogen atom guide
Required raw material gas, e.g. H₂, or the above
Gases such as silanes and/or germanium hydride
The gas is introduced into a deposition chamber for sputtering.
All that is required is to form a plasma atmosphere of gases. In the present invention, raw materials for introducing halogen atoms
The halogen compounds or halogens listed above as gases
Silicon compounds containing gen are used as effective ones.
In addition, HF, HCl,
Hydrogen halides such as HBr, HI, SiH₂F₂，
SiH₂I₂,SiH₂Cl₂,SiHCl₃,SiH₂Br₂,SiHBr₃etc
halogen-substituted silicon hydride, and GeHF₃，
GeH₂F₂, GeH₃F, GeHCl₃, GeH₂Cl₂，
GeH₃Cl, GeHBr₃, GeH₂Br₂, GeH₃Br,
GeHI₃, GeH₂I₂, GeH₃Hydrogenation and halogenation of I, etc.
Hydrogen atoms such as germanium are one of the constituent elements.
halides, GeF_Four, GeCl_Four, GeBr_Four, GeI_Four，
GeF₂, GeCl₂, GeBr₂, GeI₂halogenated gel such as
Manium, etc. in gaseous state or capable of being gasified
The substance is also effective as a starting material for the formation of the first layer G.
I can list many. Among these substances, halogenated substances containing hydrogen atoms
When forming the first layer G, halogen atoms are added to the layer.
to control electrical or photoelectric characteristics at the same time as introducing
Since extremely effective hydrogen atoms are also introduced, the present invention
It is used as a suitable raw material for halogen introduction.
used. Introducing hydrogen atoms into the first layer G structurally
In addition to the above, H₂, or SiH_Four,Si₂H₆，
Si₃H₈,Si_FourH_TenTo supply Ge with silicon hydride such as
germanium or germanium compound, or
is GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀Hydrogenation of etc.
Silicon or Si to supply germanium and Si
A discharge is generated by coexisting a recon compound and a recon compound in the deposition chamber.
It can also be done by causing it to occur. In a preferred embodiment of the invention, the photoreceptor formed
Hydrogen atoms contained in the first layer G constituting the storage layer
Amount of child (H) or amount of halogen atom (X) or hydrogen atom
The sum of the amounts of children and halogen atoms (H + X) is preferably
is 0.01~40atomic%, more preferably 0.05~
30 atomic%, optimally 0.1 to 25 atomic%
is desirable. Hydrogen atoms (H) or/and
To control the amount of halogen atoms (X) and halogen atoms (X), for example
For example, support temperature or/and hydrogen atom (H) or halo
Starting material used to contain the Gen atom (X)
The amount of material introduced into the deposition system, the discharge force, etc.
It's better to control it. In the present invention, it is composed of a-Si(H,X).
In order to form the second layer S, the first layer S described above must be formed.
From among the starting materials (I) for G formation, for Ge supply
The starting materials excluding the starting materials that become the raw material gas for
Using the starting material () for forming layer S of 2,
Same method and conditions as when forming the first layer G
It can be done according to. That is, in the present invention, a structure composed of a-Si(H,X)
To form the second layer S, for example, glow is used.
Discharge method, sputtering method, or ion spray
For vacuum deposition methods that utilize discharge phenomena such as the Teing method.
It is accomplished by doing so. For example, by glow discharge method
Form a second layer S composed of a-Si(H,X)
To do this, basically the silicon atoms mentioned above are
Along with the raw material gas for Si supply that can supply (Si),
or/and halo for introducing hydrogen atoms (H) as necessary.
The internal pressure of the raw material gas for introducing Gen atoms (X) is reduced.
The product can be introduced into a deposition chamber that can be
– to generate an electrical discharge and to
a-Si(H,X) on the surface of a predetermined support.
It is sufficient to form a layer that Also, sputtering method
For example, inert materials such as Ar, He, etc.
gas or a mixture of gases based on these gases
Sputtering a target composed of Si in an atmosphere
When ringing, hydrogen atoms (H) or/and halogen atoms
Deposition of gas for sputtering for introduction of child (X)
It's good to have it installed in your room. In the light receiving member 1004 of the present invention, less
At least the first layer G1002 or/and the second layer S
1003 contains a substance (C) that controls conduction properties
and the desired layer contains the substance (C).
The conduction properties are given. In the present invention, the first layer G1002 or/
and the conductive properties contained in the second layer S1003.
Dominating substance (C) contains substance (C)
The substance (C) may be contained in the entire layer area of the layer.
Contained unevenly in some layer regions of the contained layer
may have been done. However, in any case, the said substance
In the layer region (PN) containing (C), the corresponding
The state of distribution of the substance in the layer thickness direction is assumed to be non-uniform. That is, for example, the entire layer area of the first layer G is
If the substance (C) is contained, the first layer G
The substance is distributed more toward the support side.
(C) is contained in the first layer G. In this way, in the layer region (PN), the material
Making the distribution concentration of (C) uneven in the layer thickness direction
and optical and electrical bonding at the contact interface with other layers.
can be made good. Substance (C) that controls conduction properties in the present invention
The first layer G is unevenly distributed in some layer regions of the first layer G.
When the substance (C) is contained in the layer G of
The layer region (PN) containing is the edge of the first layer G.
It is established as a departmental area, and can be changed as required each time.
It can be decided as appropriate. In the present invention, the above substance is contained in the second layer S.
When containing (C), preferably at least
Also, in the layer region including the contact interface with the first layer G,
It is desirable to include substance (C). Both the first layer G and the second layer S support conductive properties.
When containing the substance (C), the first layer G
A layer region containing the substance (C) in
and the substance (C) in the second layer S is contained.
Provided so that the layered areas are in contact with each other.
is desirable. Moreover, before being contained in the first layer G and the second layer S
The substance (C) is present in the first layer G and the second layer S.
They may be of the same type or different types;
The content may be the same or different in each layer.
stomach. However, in the present invention, each layer contains
When the substance (C) is the same type in both
In this case, the content in the first layer G should be sufficiently increased, or
Or, if a substance (C) with different electrical characteristics is used,
It is preferable that each desired layer contains each of them. In the present invention, at least the light-receiving layer is composed of
conduction in the first layer G and/or the second layer S
By containing a substance (C) that controls the characteristics
layer region containing the substance (C) [first layer]
G or part or all of the second layer S
The conduction characteristics can be adjusted as desired.
Things like this that can be controlled
Quality C includes so-called impurities in the semiconductor field.
In the present invention, formation
a-Si(H,X) or
p-type conduction for/and a-SiGe(H,X)
P-type impurities give properties and n-type conductivity properties.
n-type impurities can be mentioned. Specifically, as a p-type impurity,
Atoms belonging to the group (Group atoms), for example, B (B)
element), Al (aluminum), Ga (gallium), In
Especially suitable are Tl (thallium), etc.
B and Ga are used for this purpose. As an n-type impurity, it belongs to group of the periodic table.
atoms (group atoms), e.g. P (phosphorus), As (arsenic)
element), Sb (antimony), Bi (bismuth), etc.
In particular, P and As are preferably used. In the present invention, the substance C that controls conduction properties is
Its content in the contained layer area (PN)
is the conductivity required for the layer region (PN) or
is designed so that the layer region (PN) is in direct contact with the support.
If the contact surface with the support is
In the organic relationship, such as the relationship with the characteristics that
You can choose as you like. Also, the layer region (PN) is not provided in direct contact with the layer region (PN).
to other layer regions or contact interfaces with other layer regions.
The relationship with the conduction characteristics is also considered, and the conduction characteristics are controlled.
The content of the substance to be controlled is selected appropriately. In the present invention, contained in the layer region (PN)
As the content of the substance (C) that controls the conduction properties of
is preferably 0.01 to 5×10^Fouratomic ppm, more
Preferably 0.5 to 1×10^Fouratomic ppm, optimally
1~5×10³It is preferable to set it as atomic ppm. In the present invention, the substance that controls the conduction characteristics
The substance in the layer region (PN) containing (C)
Preferably the content of quality (C) is 30 atomic ppm or less.
above, more preferably 50 atomic ppm or more, optimally
By setting it to 100 atomic ppm or more,
If the substance (C) to be contained is the above-mentioned p-type impurity,
In some cases, the free surface of the photoreceptor layer is treated with a polar charge.
When subjected to treatment, electricity is transferred from the support side into the photoreceptive layer.
It is possible to effectively prevent child injection, and the above-mentioned
When the substance (C) to be contained is the above n-type impurity
In this method, the free surface of the photoreceptor layer undergoes a polar charging treatment.
Holes are injected from the support side into the photoreceptor when receiving light.
can be effectively prevented. In the above case, as mentioned above, the layer area
In the layer area (Z) excluding the area (PN), there is a layer
Substances that control the conduction properties contained in the region (PN)
The conduction type polarity is different from the conduction type polarity of quality (C).
It may contain a substance (C) that controls the conductive properties.
or have conduction characteristics with conduction types of the same polarity.
The controlling substance (C) is contained in the layer region (PN).
contained in an amount much smaller than the actual amount.
It's a good thing. In such a case, the material contained in the layer region (Z)
the content of the substance (C) that governs the conduction properties; and
The substance contained in the layer region (PN)
Appropriately as desired depending on the polarity and content of (C)
Although it is determined, preferably 0.001~
1000atomic ppm, more preferably 0.05~
500atomic ppm, optimally 0.1-200atomic ppm
It is desirable that this is done. In the present invention, a layer region (PN) and a layer region
(Z) contains a substance (C) that controls the same kind of conductivity.
If it has, the content in the layer region (Z)
As such, it is preferably 30 atomic ppm or less.
is desirable. In the present invention, a layer region (PN) and a layer region
(Z) contains a substance that controls the same kind of conductivity.
When the content in the layer area (Z) is
is preferably 30 atomic ppm or less.
Delicious. In the present invention, one polarity is added to the photoreceptive layer.
Contains a substance that controls conductivity and has a conductivity type.
a conductive layer region with a conductivity type of the other polarity.
Direct contact with the layer containing the substance that controls the
A so-called depletion layer is provided in the contact region.
You can also do that. clogging, for example, the above p-type impurity in the photoreceptor layer.
The layer region containing the n-type impurity and the layer region containing the n-type impurity mentioned above.
The so-called p-n layer is placed in direct contact with the layer region.
A junction can be formed to provide a depletion layer. FIG. 27 to FIG. 35 show the light in the present invention.
Material layer contained in the layer region (PN) of the receiving member
A typical example of the distribution state in the layer thickness direction of (C) is shown.
Ru. In each figure, the layer thickness and concentration are indicated.
If the values are shown as they are, the differences between each figure will not be clear.
These figures are shown in extreme form due to
should be understood as a schematic representation. As the actual distribution
Therefore, the object of the present invention can be achieved and desired
t so that the distribution concentration line can be obtained._i(1≦i≦8)
or C_i(1≦i≦17) or
The entire cloth curve should be multiplied by an appropriate coefficient.
It is. In Figures 27 to 35, the horizontal axis is the material
The distribution concentration C of (C) is the vertical axis is the layer area (PN)
indicates the layer thickness of t_Bis the layer area (PN) on the support side
The position of the end face is t_Tis the layer area on the opposite side from the support side
Indicates the position of the end face of (PN). That is, substance (C)
The layer area (PN) contained in is t_BT from the side_Ttowards the side
Layer formation is then carried out. Figure 29 shows the substances contained in the layer region (PN).
The first typical example of the distribution state of quality (C) in the layer thickness direction is
shown. In the example shown in FIG. 27, the content of substance (C)
The surface where the layer region (PN) is formed and the layer region
The interface position t where the surface of the region (PN) contacts_BMoret₁of
Up to the position, the distribution concentration C of substance (C) is C₁Become
Layer region where substance (C) is formed while taking a certain value
(PN), position t₁Rather than concentration C₂Than
Interface position t_Tgradually and continuously decreased until
There is. Interface position t_TThe distribution concentration of substance (C) is
The degree C is assumed to be substantially zero (here, it is substantially zero).
This means that the amount is below the detection limit. ). In the example shown in Figure 28, it contains
The distribution concentration C of substance (C) is at position t_BMore position_Tto
concentration C until₃Gradually and continuously decreases from position t_T
concentration C at_FourForm a distribution state such that
There is. In the case of Figure 29, position t_BMore position₂to
is the distribution concentration C of substance (C) is the concentration C_Fiveand a constant value
and position t₂and position t_Tgradually between
Continuously decreased position t_T, the distribution concentration C
is essentially zero. In the case of Figure 30, the distribution concentration C of substance (C) is
position t_BMore position_Tup to the concentration C₆First series
Continuously gradually decreased, position t₃more rapid succession
position t_Tvirtually zero in
It is. In the example shown in Figure 31, the fraction of substance (C) is
The cloth density C is at the position t_Band position t_FourIn between, the concentration
C₇is a constant value, and the position t_TIn , the distribution concentration C
is assumed to be zero. position t_Fourand position t_TThe distribution is between
The concentration C is linearly proportional to the position t_FourMore position_Tuntil
has been reduced. In the example shown in FIG. 32, the distribution concentration C
is position t_BMore position_Fiveuntil the concentration C₈Take a constant value of
position t_FiveMore position_Tuntil the concentration C₉More concentration C_Ten
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 33, the position t_BMore position
t_TUntil , the distribution concentration C of substance (C) is the concentration
C₁₁Decrease linearly to more effectively reach zero
are doing. In Figure 34, position t_BMore position₆leading to
Until the distribution concentration C of substance (C) is the concentration C₁₂Than
Concentration C₁₃is linearly decreased until the position t₆position
Placement_TBetween, the concentration C₁₃is assumed to be a constant value of
An example is shown. In the example shown in Figure 35, the substance (C)
The distribution concentration C is at the position t_Bconcentration C at₁₄and
position t₇This concentration C until it reaches₁₄The beginning is Yutsu
It is greatly reduced, t₇Near the position of
position t has been reduced to₇Then the concentration C₁₅It is said that position t₇and position t₈At first, the relationship between
decreased, and then decreased slowly and gradually.
position t₈At concentration C₁₆and position t₈and position t₉between
The position t is gradually decreased.₉In, the concentration
C₁₇leading to. position t₉and position t_TThe concentration between
C₁₇Shape as shown in the figure to make it more substantially zero
It is decreasing according to the curve of As described above, from FIGS. 27 to 35, the layer region
The layer thickness direction of the substance (C) contained in (PN)
As we have explained some typical examples of distribution states, the present invention
In the case of a substance (C) on the support side,
It has a part with a high distribution concentration C, and the interface t_Ton the side
, the distribution concentration C is considerably lower than that on the support side.
The distribution state of the substance (C) having the darkened parts is layered.
It is desirable that it be provided in the area (PN). The light receiving layer constituting the receiving member in the present invention
The constituting layer region (PN) is preferably as described above.
The substance (C) is contained at a relatively high concentration on the support side.
It is desirable to have a localized region (B) with
stomach. In the present invention, the localized region (B) is shown in FIG.
To explain using the symbols shown in Figures 35 to 35, the field
surface position t_BIt is desirable that it be provided within 5μ.
It's a good thing. In the present invention, the localized region (B) is an interface
position t_BIf the total layer area (L) is up to 5μ thick,
In some cases, it may be part of the layer region (L).
There are also cases. Should the localized region (B) be part of the layered region (L)?
Whether it is all or not depends on the requirements of the photoreceptive layer to be formed.
It is determined as appropriate according to the characteristics to be used. In the layer constituting the photoreceptive layer, there is a layer that controls the conduction properties.
substances (C), such as group atoms or group
Inclusion of the substance (C) by structurally introducing group atoms
To form a layered region (PN),
In some cases, the starting material for the introduction of group atoms or
The starting material for introducing group atoms is introduced into the deposition chamber in a gaseous state.
introduced along with other starting materials to form the photoreceptive layer.
Just put it in. It can serve as a starting material for the introduction of such group atoms.
Examples of substances that are in a gaseous state at room temperature and pressure are
At least something that can be easily gasified under layer-forming conditions is
Preferably adopted. Such group atom conductors
Specifically, it is used as a starting material for introducing boron atoms.
As, B₂H₆,B_FourH_Ten,B_FiveH₉,B_FiveH₁₁，
B₆H_Ten,B₆H₁₂,B₆H₁₄Boron hydride, BF etc.₃，
BCl₃,BBr₃Examples include boron halides such as.
In addition, AlCl₃,GaCl₃, Ga(CH₃)₃,InCl₃，
TiCl₃etc. can also be mentioned. As a starting material for the introduction of group atoms,
It is effectively used for introducing phosphorus atoms.
So, PH₃,P₂H_FourHydrogenated phosphorus, PH etc._FourI, P.F.₃，
P.F._Five, PCl₃, PCl_Five, PBr₃, PBr_Five, P.I.₃etc. halogen
Examples include phosphorus chloride. In addition, AsH₃,AsF₃，
AsCl₃, AsBr₃,AsF_Five,SbH₃,SbF₃,SbF_Five，
SbCl₃,SbCl_Five,SiH₃,SiCl₃, BiBr₃etc. also group
Listed as an effective starting material for atom introduction
can be done. In the light receiving member 1004 shown in FIG.
In other words, the surface layer 1 formed on the second layer 1003
005 has a free surface, is mainly moisture resistant, continuous repeating
characteristics, electrical pressure resistance, operating environment characteristics, mechanical resistance
Achieving the objectives of the present invention in terms of durability and photoreceptive properties.
It is established for the purpose of The surface layer 1005 in the present invention is made of silicon raw material.
(Si), carbon atom (C), and hydrogen atom if necessary
Amorphous containing (H) or/and halogen atom (X)
Material (hereinafter referred to as “a-(Si_xC_1-x)_y(H,X)_1-y”
vinegar. However, 0<x<1 and 0<y<≦1)
be done. a-(Si_xC_1-x)_y(H,X)_1-yA surface composed of
The layer 1005 is formed using a plasma method such as a glow discharge method.
Polymer vapor phase method (PCVD method), optical CVD method, thermal
CVD method, sputtering method, electron bee
This can be done by the Mu method, etc. These manufacturing methods are
construction conditions, level of capital investment, manufacturing scale,
Factors such as the desired characteristics of the photoconductive member to be manufactured
Therefore, it is selected and adopted as appropriate, but depending on the desired characteristics.
Manufacturing conditions for manufacturing a photoreceptive member with
Along with silicon atoms, which are relatively easy to control,
Surface layer 1 in which carbon atoms and halogen atoms are formed
Is it an advantage that it can be easily introduced into 005?
Therefore, glow discharge method or sputtering method is preferable.
Adopted. Furthermore, in the present invention, glow emission
Electric method and sputtering method can be combined in the same equipment system.
The surface layer 1005 may be formed using the same method. The surface layer 1005 is formed by a glow discharge method.
To do this, a-(Si_xC_1-x)_y(H,X)_1-yRaw material gas for formation
If necessary, mix with diluent gas at the specified mixing ratio.
Then, introduce it into a vacuum deposition chamber equipped with a support.
The introduced gas causes a glow discharge.
This turns into gas plasma and forms it on the support.
on the layer that is a-(Si_xC_1-x)_y(H,X)_1-y All you have to do is deposit it. In the present invention, a-(Si_xC_1-x)_y(H,X)_1-y
As raw material gas for formation, silicon atoms (Si),
Carbon atom (C), hydrogen atom (H), halogen atom (X)
A gaseous substance whose constituent atoms are at least one of
Inside the gasified substance or gasified substance
Most of them can be used. Si is one of the constituent elements among Si, C, H, and
When using a raw material gas as a silicon, for example, Si
A raw material gas with C as a constituent atom and C as a constituent atom.
raw material gas and, if necessary, H as a constituent atom.
or/and a raw material gas containing X as a constituent atom
or
Raw material gas consisting of Si as a constituent atom and consisting of C and H
Raw material gas containing atoms or/and constituent elements consisting of C and X
This is also done at the desired mixing ratio with the raw material gas.
, or mix it with Si, or use an element whose constituent atoms are Si.
A raw material gas and three constituent atoms: Si, C, and H.
Raw material gas or three constituent atoms of Si, C and X
It can be used by mixing with raw material gas.
Ru. In addition, there is also a raw material gas whose constituent atoms are Si and H.
mixed with raw material gas containing C as a constituent atom.
It is also possible to use a raw material gas containing Si and X as constituent atoms.
Used by mixing raw material gas containing C as a constituent atom.
You may. In the present invention, the surface layer 1005 contains
Suitable halogen atoms (X) include F,
Cl, Br, I, especially F, Cl are preferred
It is. In the present invention, forming the surface layer 1005
It can be used as a raw material gas that can be effectively used for
The gas is in a gas state at room temperature and pressure, or it is easily
Examples include substances that can be gasified. In the present invention, raw materials for forming the surface layer 1005
The gases that can be effectively used are Si and H.
SiH as a constituent atom_Four,Si₂H₆,Si₃H₈,Si_FourH_Tenetc.
Silicon hydride gas such as silane, C and H
For example, saturated carbon atoms having 1 to 4 carbon atoms,
Japanese hydrocarbons, ethylene hydrocarbons having 2 to 4 carbon atoms
element, acetylenic hydrocarbon having 2 to 3 carbon atoms, halo
Gen simple substance, hydrogen halide, interhalogen compound,
Silicon halide, halogen-substituted silicon hydride, hydrogen
Examples include silicon oxide. Specifically, saturation
Methane (CH_Four), ethane
(C₂H₆), propane (C₃H₈), n-butane (n-
C_FourH_Ten), pentane (C_FiveH₁₂), ethylene hydrocarbon
As, ethylene (C₂H_Four),propylene
(C₃H₆), butene-1 (C_FourH₈), butene-2
(C_FourH₈), isobutylene (C_FourH₈), penten
(C_FiveH_Ten), and acetylene hydrocarbons include acetylene hydrocarbons.
Chyrene (C₂H₂), methylacetylene (C₃H_Four), b
Chin (C_FourH₆), as a single halogen, fluorine,
Halogen gas, halogenation of chlorine, bromine, and iodine
Hydrogen includes FH, HI, HCl, HBr, and halogens.
Intermediate compounds include BrF, ClF, ClF₃,ClF_Five，
BrF_Five,BrF₃,IF₇,IF_Five, ICl, IBr, halogenation
As silicon, SiF_Four,Si₂F₆,SiCl₃Br,
SiCl₂Br₂,SiClBr₃,SiCl₃I, SiBr_Four, halogen
As silicon hydride, SiH₂F₂,SiH₂Cl₃，
SiH₃Cl, SiH₃Br, SiH₃Br, SiH₂Br₂,SiHBr₃,
As silicon hydride, SiH_Four,Si₂H₈,Si₃H₈，
Si_FourH_TenSilanes such as
I can do it. In addition to these, CF_Four,CCl_Four, CBr_Four,CHF₃，
CH₂F₂,CH₃F, CH₃Cl, CH₃Br, CH₃I,
C₂H_FiveHalogen-substituted paraffinic hydrocarbons such as Cl, etc.
Basic, SF_Four,SCIENCE FICTION₆Fluorinated sulfur compounds, Si
(CH₃)_Four,Si(C₂H_Five)_Four, etc., alkyl silicides and SiCl
(CH₃)₃,SiCl₂(CH₃)₂, SiCl₃CH₃etc. halogen
Silane derivatives such as alkyl silicides are also effective.
It can be mentioned as one of the following. These surface layer 1005 forming substances are formed
Silicon raw material is contained in the surface layer 1005 at a predetermined composition ratio.
carbon atoms and halogen atoms and optionally water.
The shape of the surface layer 1005 is such that it contains elementary atoms.
The selected materials are used in the construction as desired. For example, silicon atoms, carbon atoms, and hydrogen atoms
can be easily incorporated and a layer with desired properties can be formed.
Si(CH₃)_Fourand contains halogen atoms.
SiHCl as a₃,SiH₂Cl₂,SiCl_Four,or
Yes, SiH₃Add Cl, etc. to the specified mixing ratio to form a gaseous
Introduced into the apparatus for forming the surface layer 1005 in
By generating a low discharge, a-(Si_x
C_1-x)(Cl+H)_1-yA surface layer 1005 consisting of
can be achieved. Surface layer 1005 is formed by sputtering method.
To form, single crystal or polycrystalline Si wafer
- or C wafer or a mixture of Si and C
If you target a wafer with
and halogen atoms or/and hydrogen atoms as necessary.
in various gas atmospheres containing carbon dioxide as a component.
This can be done by puttering. For example, using a Si wafer as a target
Then, the source for introducing C and H or/and
Dilute the raw gas as necessary and use it for sputtering.
The gas plasma of these gases is introduced into the deposition chamber.
The Si wafer is sputtered by forming a matrix.
Just Google it. Additionally, Si and C are separate targets.
or using a single target with a mixture of Si and C.
By using hydrogen atoms or
is/or in a gas atmosphere containing halogen atoms.
It is done by sputtering with
Ru. Substances that serve as raw material gas for introduction of C, H and X
As, the surface shown in the glow discharge example mentioned earlier
The material for forming layer 1005 is sputtered.
It can also be used as an effective substance in some cases. In the present invention, the surface layer 1005 is treated by glow discharge.
Used when forming by sputtering method or sputtering method.
The diluent gas used is so-called rare gas, for example,
He, Ne, Ar, etc. are preferred.
Can be done. The surface layer 1005 in the present invention meets the requirements.
carefully shaped to give the desired characteristics.
will be accomplished. That is, Si, C, H or/and X as necessary.
The composition of the substances used as constituent atoms depends on the conditions for their creation.
Structurally, it takes forms ranging from crystals to amorphous.
In terms of electrical properties, it ranges from conductive to semiconducting to insulating.
properties ranging from photoconductive to non-photoconductive.
Each shows electrical properties, and in the present invention,
a-(Si_xC_1-x)_y
(H,X)_1-yas desired so that a
The selection of the creation conditions is made strictly. For example, table
The main purpose of the surface layer 1005 is to improve electrical voltage resistance.
To set it up, a-(Si_xC_1-x)_y(H,X)_1-y has no significant electrically insulative behavior in the operating environment.
Created as a crystalline material. In addition, improvements in continuous repeated use characteristics and usage environment characteristics
A surface layer 1005 is provided mainly for the purpose of
In some cases, the degree of electrical insulation mentioned above is relaxed to some extent.
and has a certain degree of sensitivity to the light that is irradiated.
As an amorphous material a-(Si_xC_1-x)_y(H,X)_1-y is created. on the second layer surface a-(Si_xC_1-x)_y(H,X)_1-y During layer formation, when forming the surface layer 1005 consisting of
The support temperature determines the structure and properties of the layer formed.
This is an important factor that influences the present invention.
has the desired properties a-(Si_xC_1-x)_y(H,X)_1-y support during layer creation so that the layer can be created as desired.
It is desirable that the temperature be tightly controlled. The desired objectives of the present invention are effectively achieved.
In accordance with the method of forming the surface layer 1005 for
The optimal range is selected to form the surface layer 1005.
Preferably carried out at 20-400℃, more preferred
temperature is 50 to 350℃, optimally 100 to 300℃.
is desirable. For forming the surface layer 1005
is based on delicate control of the composition ratio of the atoms that make up the layer.
Controlling thickness is relatively easy compared to other methods
Glow discharge method or sputtering
Although it is advantageous to adopt the
When forming the surface layer 1005, the above-mentioned support body temperature
The discharge power during layer formation is created as well as the degree of a-(Si_xC_1-x)_y(H,X)_1-y It is one of the important factors that influences the characteristics of Characteristics for achieving the purpose of the present invention
have a-(Si_xC_1-x)_y(H,X)_1-y discharge power to be created effectively and productively.
- Conditions are preferably 10 to 1000W, more suitable
20 to 750W, optimally 50 to 650W.
It is desirable. The gas pressure in the deposition chamber is preferably between 0.01 and 1 Torr.
It is desirable that the value is approximately 0.1 to 0.5 Torr.
stomach. In the present invention, a surface layer 1005 is created.
Desired numerical range of support temperature and discharge power for
The above range of values can be cited as the range, but this
The layer creation factors such as
of the desired characteristics, rather than the a-(Si_xC_1-x)_y(H,X)_1-y reciprocal so that a surface layer 1005 consisting of
The best of each layer creation factor based on organic relationships.
It is desirable to be able to determine an appropriate value. In the surface layer 1005 of the light receiving member of the present invention
The amount of carbon atoms contained depends on the composition of the surface layer 1005.
The desired features to achieve the objectives of the invention as well as the conditions for formation
It is important to form the surface layer 1005 that provides
It is a factor. Carbon contained in the surface layer 1005 in the present invention
The amount of elementary atoms is determined by the amount of amorphous atoms forming the surface layer 1005.
Depending on the type of material and its characteristics, as appropriate.
It can be determined by That is, the general formula a-(Si_xC_1-x)_y(H,X)_1-y
Amorphous materials shown in can be roughly divided into silicon
Amorphous material (hereinafter referred to as
After that, “a-Si_aC_1-a”. However, 0<a<1),
Composed of silicon atoms, carbon atoms, and hydrogen atoms
amorphous material (hereinafter referred to as “a-(Si_bC_1-b)_cH_1-c"and
write down However, 0<b, c<1), silicon atoms and
Carbon atoms, halogen atoms, and hydrogen atoms if necessary
An amorphous material (hereinafter referred to as “a-(Si_d
C_1-d)_e(H,X)_1-e”. However, 0<d, e<
1). In the present invention, the surface layer 1005 is made of a-Si._a
C_1-aWhen the surface layer 1005 contains
The amount of carbon atoms included is preferably 1×10^-3~
90 atomic%, more preferably 1-80 atomic%, most
Suitably, it is desirable to set it to 10 to 75 atomic%.
It is. That is, the previous a-Si_aC_1-aIn the display of a of
If carried out, a is preferably 0.1 to 0.99999, more preferably
is between 0.2 and 0.99, optimally between 0.25 and 0.9. In the present invention, the surface layer 1005 is a-(Si_b
C_1-b)_cH_1-cWhen the surface layer 1005 is composed of
The amount of carbon atoms contained is preferably 1×10^-3
~90 atomic%, more preferably 1~
90 atomic%, optimally 10-80 atomic%
is desirable. As the content of hydrogen atoms
preferably 1 to 40 atomic%, more preferably
Usually 2-35 atomic%, optimally 5-30 atomic%
It is desirable that the hydrogen content be within these ranges.
In practice, the light-receiving member formed when there is a
It can be fully applied as an excellent product in various fields. That is, the previous a-(Si_bC_1-b)_cH_1-cDo it with the display
b is preferably 0.1 to 0.99999, more preferably
is preferably 0.1 to 0.99, optimally 0.15 to 0.9, c
preferably 0.6 to 0.99, more preferably 0.65 to 0.98, most preferably
It is preferably 0.7 to 0.95. The surface layer 1005 is a-(Si_dC_1-d)_e(H,X)_1
-eWhen the surface layer 1005 includes
The content of carbon atoms is preferably
is 1×10^-3~90 atomic%, more preferably 1
~90 atomic%, optimally 10-80 atomic%
It is desirable that the Contains halogen atoms
The amount is preferably 1 to 20 atomic%.
It is desirable that halogen atoms be present in these ranges.
The actual light-receiving member created when there is a
It can be applied to many surfaces. as needed
The content of hydrogen atoms is preferably
is less than 19 atomic%, more preferably 13 atomic%.
It is desirable that the That is, the previous a-(Si_dC_1-d)_e(H,X)_1-ed,
If expressed as e, d is preferably 0.1 to
0.99999, more preferably 0.1-0.99, optimally
0.15 to 0.9, preferably e, 0.8 to 0.99, more preferably
Suitably 0.82 to 0.99, optimally 0.85 to 0.98.
is desirable. Numerical range of layer thickness of surface layer 1005 in the present invention
This is important for effectively achieving the purpose of the present invention.
This is one of the important factors. In order to effectively achieve the purpose of the present invention,
It can be determined as desired depending on the situation. Moreover, the layer thickness of the surface layer 1005 is determined by
The amount of carbon atoms and the thickness of the first layer and second layer
Even in the relationship between
be applied as desired under organic relationships according to gender.
It is necessary to decide accordingly. In addition, it is possible to add economic considerations that take into account productivity and mass production.
It is desirable that considerations also be made in terms of cost efficiency. Book
The thickness of the surface layer 1005 in the invention is preferably
Preferably 0.003 to 30μ, preferably 0.004 to 20μ, optimal
It is desirable that the value be 0.005 to 10μ.
Ru. The surface layer 1005 has a protective layer for mechanical durability.
Acts as a protective layer, and optically acts as an anti-reflection layer.
You can let the Lord carry out the work of the Lord. The surface layer 1005 is reflective when the following conditions are met.
Suitable to act as a preventive layer. That is, the refractive index of the surface layer 1005 is n, and the layer thickness is
d, and if the wavelength of the incident light is λ, then d=λ/4n , or an odd multiple thereof, the surface layer is reflective
Suitable as a preventive layer. Also, the refractive index of the second layer
When is set to na, the refractive index n of the surface layer is n=√ and the thickness d of the surface layer is d=λ/4n or an odd multiple thereof, the surface layer is anti-reflective.
Ideal as a layer. a-Si:H as the second layer
The refractive index of a-Si:H is approximately 3.3 when used in
Therefore, a material with a refractive index of 1.82 is used as the surface layer.
Are suitable. a-Si:H adjusts the amount of C
Therefore, the refractive index can be set to such a value.
mechanical durability, interlayer adhesion and electrical
Since the characteristics can be fully satisfied, the surface
It is the most suitable material for the layer. In addition, the surface layer 1005 plays a role as an antireflection layer.
When focusing on , the thickness of the surface layer is
More preferably, the thickness is 0.05 to 2 μm. The support used in the present invention includes conductive
It may be electrically conductive or electrically insulating. conductive support
Examples of materials include NiCr, stainless steel, Al,
Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd, etc.
Examples include metals and alloys thereof. As the electrically insulating support, polyester, polyester, etc.
Liethylene, polycarbonate, cellulose acetate
Tate, polypropylene, polyvinyl chloride, poly
Vinylidene chloride, polystyrene, polyamide, etc.
Synthetic resin film or sheet, glass, ceramic
Tsuku, paper, etc. are usually used. electrical insulation of these
The sexual support preferably has at least one surface thereof.
is conductively treated, and the other side is on the conductively treated surface side.
Preferably, layers are provided. For example, if it is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Pd,In₂O₃, SnO₂,ITO(In₂O₃+SnO₂) etc.
Conductivity is imparted by providing a thin film of
or synthetic resin film such as polyester film.
For ilms, NiCr, Al, Ag, Pb, Zn, Ni,
Gold such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc.
Vacuum evaporation, electron beam evaporation, sputtering
Provided on the surface with a ring etc., or attached with the metal mentioned above.
The surface is laminated to make it conductive.
Granted. The shape of the support body may be cylindrical or base.
It can be of any shape such as a bolt shape or a plate shape, and can be shaped as desired.
The shape is determined, for example, as shown in Fig. 10.
The light receiving member 1004 is used as a light receiving member for electrophotography.
For continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape.
stomach. The thickness of the support is determined so that the desired light-receiving member is formed.
However, as a light receiving member,
When flexibility is required, it can be used as a support.
As much as possible within the range where the function can be fully demonstrated.
thinned out. However, in such cases, the manufacturing of the support
preferred from the viewpoints of handling, mechanical strength, etc.
or more than 10μ. Next, an example of the method for manufacturing the light receiving member of the present invention will be described.
The outline will be explained. Figure 20 shows an example of a light-receiving member manufacturing device.
vinegar. In the figure, gas cylinders from 2002 to 2006, 2045
The container contains a material for forming the light-receiving member of the present invention.
The raw material gas is sealed, and as an example,
In 2002, SiH_FourGas (purity 99.999% or less)
SiH_Four) cylinder, 2003 is GeH_Fourgas (pure
Degree 99.999% or less, GeH_Four) cylinder, 20
04 is SiF_FourGas (purity 99.99%, hereinafter referred to as SiF)_Four)
Cylinder, 2005 is H₂B diluted with₂H₆gas
(Purity 99.999%, below B₂H₆/H₂abbreviated as) cylinder,
2006 is H₂Gas (99.999% purity) cylinder, 2
045 is CH_FourGas (99.999% purity) cylinder
Ru. To let these gases flow into the reaction chamber 2001
is for gas cylinders 2002-2006, 2045
Lube 2022-2026, 2044, Leak Val
Make sure that the tab 2035 is closed and
Inflow valve 2012-2016, 2043, outflow
Valve 2017-2021, 2041, auxiliary valve
Confirm that pages 2032 and 2033 are open.
First, open the main valve 2034 to open the reaction chamber.
2001, and exhaust the inside of each gas pipe. then true
The reading of sky total 2036 is about 5×10^-6When it becomes torr
Auxiliary valve 2032, 2033 at the point, outflow valve
Close 2017-2021, 2041. Next, a photoreceptive layer is placed on the cylindrical substrate 2037.
To give an example of forming a gas cylinder 2
SiH from 002_FourGas, from gas cylinder 2003
GeH_FourGas, gas cylinder B from 2005₂H₆/H₂
Gas, H from 2006₂Gas valve 2022,
2023, 2025, and 2026 to open the outlet pressure gauge.
2027, 2028, 2030, 2031
Pressure 1Kg/cm²Adjust the inflow valve 2012,2
Gradually open 013, 2015, 2016 and
Souflo controller 2007, 2008, 20
10 and 2011, respectively. continues to flow
Outlet valve 2017, 2018, 2020, 202
1. Gradually open the auxiliary valves 2032 and 2033.
the respective gases are caused to flow into the reaction chamber 2001. child
SiH when_FourGas flow rate, GeH_Fourgas flow rate,
B₂H₆/H₂Gas flow rate, H₂The ratio of gas flow rates is the desired value
Outflow valve 2017, 2018, 2
020, 2021, and the reaction chamber 200
Vacuum gauge 203 so that the pressure inside 1 reaches the desired value.
Open the main valve 2034 while checking the reading of 6.
Adjust. Then, the temperature of the base 2037 increases.
Temperature range from 50 to 400℃ by heater 2038
After confirming that the power supply 204 is set to
0 to the desired power and plug it into the reaction chamber 2001.
A low discharge is generated and at the same time a pre-designed
GeH according to the gas rate curve_FourGas flow rate and
B₂H₆/H₂Adjust the gas flow rate manually or with an external drive motor.
Valve 2018, 2020 by method such as data
It is formed by gradually changing the opening of the
Germanium atoms and boron atoms contained in the layer
control the distribution concentration of Maintain the glow discharge for the desired time as described above.
Then, the first layer G is deposited on the base 2037 to a desired layer thickness.
Form. Steps in which the first layer G is formed to a desired layer thickness
At the floor, completely close the outflow valve 2018.
Other than that and changing the discharge conditions as necessary,
Glow discharge for the desired time using similar conditions and procedures.
By maintaining germanium atoms on the first layer G
Forming a second layer S that does not substantially contain
I can do it. In addition, each of the first layer S and the second layer G has a flow
By opening and closing the outlet valve 2020 as appropriate, boron-containing
It may be included, it may not be included, or each layer may be
It is also possible to contain boron only in some layer regions.
Ru. After forming the above second layer S, mass flow condenser
Trawlers 2007 and 2042 at the specified flow rate ratio
except for the settings, following similar conditions and procedures.
By maintaining the glow discharge for the desired time, the second layer S
Mainly composed of silicon atoms and carbon atoms on top
The surface layer can be formed to a desired thickness. While forming layers, aim to make the layer formation uniform.
The base body 2037 is rotated by a motor 2039 to
It is desirable to rotate at a constant speed. Examples will be described below. Example 1 Al support (length (L) 357mm, diameter (r) 80mm)
was machined using a lathe to give the surface texture as shown in Figure 21B.
Ta. Next, using the deposition apparatus shown in Figure 20,
Following various operating procedures under the conditions shown, A-Si
A photoreceptive member for electrophotography is placed on the above-mentioned Al support.
Deposited. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figures 22 and 36.
Mass Flow Controller 2007,2
008 and 2010 on computer
(HP9845B). Incidentally, the surface layer was deposited as follows. After deposition of the second layer, CH_Fourgas flow
amount is SiH_FourFlow rate ratio to gas flow rate is SiH_Four/CH_Four
Mass floco corresponding to each gas so that = 1/30
Set the controller to 0.5μ with high frequency power 150W
m-thick a-SiC(H) was deposited. A-Si:H produced in this way for electrophotography
The surface condition of the light receiving member is as shown in Figure 21C.
Ta. Regarding the light-receiving members for electrophotography as described above,
Image exposure device shown in Figure 26 (laser light wavelength
Perform image exposure at 780 nm, spot diameter 80 μm),
It was developed and transferred to obtain an image. the resulting image
No interference fringe pattern was observed in the image, which is sufficient for practical use.
So it was hot. Example 2 After depositing up to the second layer in the same manner as in Example 1,
Hydrogen (H₂) Argon (Ar) gas cylinder
, clean the deposition device, and remove the
sputtering target and graphite made of Si.
A sputtering target made of fiite and
so that the area ratio becomes as shown in Table 1 Sample No. 101.
It's all over the page. The light receiving member is installed and the deposition device is installed.
Sufficiently reduce the pressure inside the equipment using a diffusion pump. Then Al
High frequency power 150W by introducing gas up to 0.015torr
generates a glow discharge to sputter the surface material.
Then, a surface layer of Sample No. 101 in Table 1 was placed on the support.
Deposited. Similarly, the Si and graphite targets
By changing the area ratio, the surface layer was changed to Samples No. 102 to 107 in Table 1.
Same method as above except forming as shown in
A light-receiving member was prepared using the following steps. Each of the electrophotographic light-receiving members thus obtained
Image exposure with laser as in Example 1
After repeating the process up to transfer approximately 50,000 times, the image is
When we performed image evaluation, we obtained the results shown in Table 1.
Ta. Example 3 When forming the surface layer, SiH_Fourgas and CH_Fourgas flow rate
By changing the ratio, silicon atoms and carbon in the surface layer
Example 1 and all except for changing the content ratio of atoms.
A light-receiving member for electrophotography is prepared using a similar method.
We created each. Each of the electrophotographic light-receiving members thus obtained
Image exposure with laser as in Example 1
After repeating the process up to transfer approximately 50,000 times, the image is
When we performed image evaluation, we obtained the results shown in Table 2.
Ta. Example 4 When forming the surface layer, SiH_Fourgas, SiF_Fourgas, CH_Four
silicon in the surface layer by changing the gas flow rate ratio.
Except for changing the content ratio of atoms and carbon atoms,
A photoreceptor for electrophotography was prepared in exactly the same manner as in Example 1.
Each container member was manufactured. Each of the electrophotographic light-receiving members thus obtained
Image exposure with laser as in Example 1
After repeating the process up to transfer approximately 50,000 times, the image is
When we performed image evaluation, we obtained the results shown in Table 3.
Ta. Example 5 Exactly the same as Example 1 except for changing the layer thickness of the surface layer.
Each of the electrophotographic light-receiving members is prepared using various methods.
Created. Each of the electrophotographic light-receiving members thus obtained
Image formation, development, and cleaning were carried out in the same manner as in Example 1.
Repeat the cleaning process and obtain the results shown in Table 4.
Ta. Example 6 The discharge power during the preparation of the surface layer was 300W, and the average
Completely the same as Example 1 except that the layer thickness was 2 μm.
An electrophotographic light-receiving member was produced by this method. The surface of the electrophotographic light-receiving member thus obtained
The average layer thickness difference between the center and both ends was 0.5 μm.
Furthermore, the difference in layer thickness at minute portions was 0.1 μm. In such light-receiving materials for electrophotography, interference fringes cannot be seen.
The image was created and developed using the same equipment as in Example 1.
I repeated the image and cleaning process, but it didn't work.
It was sufficient for the purpose. Example 7 Surface cylindrical Al support shown in Figure 43
on the body in the same manner as in Example 1 under the conditions shown in Table 5.
A light-receiving member for electrophotography was formed. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figures 23 and 37.
Mass flow controller 2007,2
008 and 2010 on computer
(HP9845B). Examples of these light-receiving members for electrophotography
Perform image exposure using an image exposure device similar to 1.
No visible image on plain paper after being developed, transferred, or fixed
I got it. Continuously perform this image forming process 100,000 times
I went there. In all of the images obtained in this case, interference
No stripes were observed, and the properties were sufficient for practical use. or,
Is there any difference between the initial image and the 100,000th image?
It was a high quality image. Example 8 Surface cylindrical Al support shown in Figure 44
Example except that it was performed on the body under the conditions shown in Table 6.
A light-receiving member for electrophotography is formed in the same manner as in 1.
Ta. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figures 24 and 38.
Mass Flow Controller 2007,2
008 and 2010 on computer
(HP9845B). Examples of these light-receiving members for electrophotography
Perform image exposure using an image exposure device similar to 1.
No visible image on plain paper after being developed, transferred, or fixed
I got it. This kind of image forming process is repeated 100,000 times in a row.
I went there. In all of the images obtained in this case, interference
No stripes were observed, and the properties were sufficient for practical use. or,
Is there any difference between the initial image and the 100,000th image?
It was a high quality image. Example 9 Surface cylindrical Al support shown in Figure 45
Example except that it was performed on the body under the conditions shown in Table 6.
A light-receiving member for electrophotography is formed in the same manner as in 1.
Ta. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figures 25 and 39.
Mass Flow Controller 2007,2
008 and 2010 on computer
(HP9845B). Examples of these light-receiving members for electrophotography
Perform image exposure using an image exposure device similar to 1.
No visible image on plain paper after being developed, transferred, or fixed
I got it. This kind of image forming process is repeated 100,000 times in a row.
I went there. In all of the images obtained in this case, interference
No stripes were observed, and the properties were sufficient for practical use. or,
Is there any difference between the initial image and the 100,000th image?
It was a high quality image. Example 10 Surface cylindrical Al support shown in Figure 43
Example except that it was performed on the body under the conditions shown in Table 7.
A light-receiving member for electrophotography is formed in the same manner as in 1.
Ta. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figure 40.
Souflo Controller 2007, 2008 and 2
010 is controlled by a computer (HP9845B).
I controlled it. Examples of these light-receiving members for electrophotography
Perform image exposure using an image exposure device similar to 1.
No visible image on plain paper after being developed, transferred, or fixed
I got it. This kind of image forming process is repeated 100,000 times in a row.
I went there. In all of the images obtained in this case, interference
No stripes were observed, and the properties were sufficient for practical use. or,
Is there any difference between the initial image and the 100,000th image?
It was a high quality image. Example 11 Cylindrical Al support with surface properties shown in Figure 44
Example except that it was performed on the body under the conditions shown in Table 8.
A light-receiving member for electrophotography is formed in the same manner as in 1.
Ta. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figure 41.
Souflo Controller 2007, 2008 and 2
010 is controlled by a computer (HP9845B).
I controlled it. Examples of these light-receiving members for electrophotography
Perform image exposure using an image exposure device similar to 1.
No visible image on plain paper after being developed, transferred, or fixed
I got it. This kind of image forming process is repeated 100,000 times in a row.
I went there. In all of the images obtained in this case, interference
No stripes were observed, and the properties were sufficient for practical use. or,
Is there any difference between the initial image and the 100,000th image?
It was a high quality image. Example 12 Surface cylindrical Al support shown in Figure 45
Example except that it was performed on the body under the conditions shown in Table 9.
A light-receiving member for electrophotography is formed in the same manner as in 1.
Ta. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figure 42.
Souflo Controller 2007, 2008 and 2
010 is controlled by a computer (HP9845B).
I controlled it. Examples of these light-receiving members for electrophotography
Perform image exposure using an image exposure device similar to 1.
No visible image on plain paper after being developed, transferred, or fixed
I got it. Continuously perform this image forming process 100,000 times
I went there. In all of the images obtained in this case, interference
No stripes were observed, and the properties were sufficient for practical use. or,
Is there any difference between the initial image and the 100,000th image?
It was a high quality image.

[Table] ◎〓Very good ○〓Good △〓Sufficient for practical use
× = Causes image defects

[Table] ◎〓Very good ○〓Good △〓Sufficient for practical use ×〓Produces image defects

[Table] ◎〓Very good ○〓Good △〓Sufficient for practical use
× = Causes image defects

【table】

【table】

【table】

【table】

【table】

【table】

【table】

[Table] [Effects of the invention] As explained in detail above, according to the present invention,
It is suitable for image formation using coherent monochromatic light, easy to manufacture, and can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development. A light-receiving member having excellent mechanical durability, particularly abrasion resistance, and light-receiving properties can be provided.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of a typical support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. Figures 11 to 19 are
FIG. 3 is an explanatory diagram for explaining the distribution state of germanium atoms in the layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. Second
FIG. 1 is an explanatory diagram of the surface state of the Al support used in Examples. Figures 22 to 25 and 36
42 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 shows an image exposure apparatus used in the example. FIGS. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the layer region (PN). 43rd
Figures 44 and 45 show the Al used in the example.
FIG. 3 is an explanatory diagram of the surface state of a support. Figure 46 shows
It is an explanatory view for explaining processing of a support body. 1000...Photoreceptive layer, 1001...Al support,
1002...first layer, 1003...second layer, 10
04...Light receiving member, 1005...Surface layer, 2601
...Light receiving member for electrophotography, 2602...Semiconductor laser, 2603...Fθ lens, 2604...Polygon mirror, 2605...Plan view of exposure device, 2606
...A side view of the exposure device.

Claims (1)

[Claims] 1. The cross-sectional shape at a predetermined cutting position is 0.3 μm to 500 μm.
A support having a large number of convex portions formed on its surface, each having a convex shape in which sub-peaks are superimposed on a main peak with a maximum depth of 0.1 μm to 5 μm at m pitch, and silicon atoms, germanium atoms, hydrogen atoms, and/or or a first layer made of an amorphous material made of silicon atoms and hydrogen atoms and/or halogen atoms, and a second layer made of an amorphous material made of silicon atoms and hydrogen atoms and/or halogen atoms; a light-receiving layer having a surface layer made of an amorphous material containing carbon atoms, and a substance controlling conductivity in at least one of the first layer and the second layer. and the distribution state of the substance is non-uniform in the layer thickness direction in the layer region containing the substance, and the distribution state of the germanium atoms contained in the first layer is non-uniform in the layer thickness direction. A light-receiving member for electrophotography, wherein the light-receiving layer has at least one pair of non-parallel interfaces within a shot range. 2. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are regularly arranged. 3. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are arranged periodically. 4. The light-receiving member for electrophotography according to claim 1, wherein each of the convex portions has the same shape in a linear approximation. 5. The light-receiving member for electrophotography according to claim 1, wherein the convex portion has a plurality of sub-peaks. 6. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. 7. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. 8. The electrophotographic light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing.