JPH02270145A - Optical information recording, reproducing and erasing member - Google Patents
Optical information recording, reproducing and erasing memberInfo
- Publication number
- JPH02270145A JPH02270145A JP1090174A JP9017489A JPH02270145A JP H02270145 A JPH02270145 A JP H02270145A JP 1090174 A JP1090174 A JP 1090174A JP 9017489 A JP9017489 A JP 9017489A JP H02270145 A JPH02270145 A JP H02270145A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- reproducing
- optical information
- thin film
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はレーザービーム等により、情報を高密度、大容
量で記録再生、及び消去できる光学情報記録再生消去部
材に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an optical information recording/reproducing/erasing member capable of recording, reproducing, and erasing information with high density and large capacity using a laser beam or the like.
従来の技術
光デイスクメモリに関しては、TeとTe02を主成分
とするTeOx (0<x<2.0)薄膜を用いた追記
型のディスクがある。さらに、レーザー光により薄膜を
加熱し、溶融し、急冷することにより、非晶質化し情報
を記録しましたこれを加熱し、徐冷することにより結晶
化し、消去することができる材料としては、S、R,0
vshinsky(ニス・アール・オプシンスキー)氏
等のカルコゲン材料Ge15Te81Sb2S2等が知
られている。Regarding conventional optical disk memories, there is a write-once type disk using a TeOx (0<x<2.0) thin film whose main components are Te and Te02. Furthermore, by heating the thin film with a laser beam, melting it, and rapidly cooling it, it became amorphous and recorded information.A material that can be crystallized and erased by heating and slowly cooling it is S. ,R,0
Chalcogen materials such as Ge15Te81Sb2S2 by Nis R. Opshinsky et al. are known.
また、As2S3やAs2Se3あるいはSb2Se3
等カルコゲン元素と周期律表第■族あるいはGe等の第
■族元素等の組み合せからなる薄膜等が広く知られてい
る。これらの薄膜をレーザ光ガイド用の溝を設けた基板
に形成し、光ディスクとして用いることができる。これ
らのディスクにレーザ光で情報を記録し、その情報を消
去する方法としてはあらかじめ薄膜を結晶化させておき
、これに〜Φ1μmに絞ったレーザ光を情報に対応させ
て強度変調を施し、例えば、円盤状の記録ディスクを回
転せしめて照射し、このピークパワーレーザ光照射部位
は、薄膜の融点以上に昇温し、かつ急冷し、非晶質化し
たマークとして情報の記録がおこなえる。そしてこの変
調バイアスパワーレーザ光照射部位は、薄膜の結晶化温
度以上に昇温し、既記緑信号情報を消去する働きがあり
、オーバライドできる。Also, As2S3, As2Se3 or Sb2Se3
Thin films made of a combination of an isochalcogenic element and an element from group Ⅰ of the periodic table or a group ① element such as Ge are widely known. These thin films can be formed on a substrate provided with a groove for guiding laser light and used as an optical disk. In order to record information on these disks with laser light and erase that information, a thin film is crystallized in advance, and a laser light focused to ~1 μm is intensity-modulated in accordance with the information, for example. A disc-shaped recording disk is rotated and irradiated, and the area irradiated with the peak power laser beam is heated to a temperature higher than the melting point of the thin film and rapidly cooled, so that information can be recorded as an amorphous mark. The area irradiated with the modulated bias power laser beam is heated to a temperature higher than the crystallization temperature of the thin film, and has the function of erasing the green signal information, which can be overridden.
レーザー光は該記録薄膜を融点以上に昇温し、また結晶
化温度以上に昇温する。このため、記録薄膜の上面およ
び下面に耐熱性のすぐれた誘電体を、基板および接着層
に対する保護層を設ける。The laser beam raises the temperature of the recording thin film above its melting point and also above its crystallization temperature. For this purpose, a dielectric material with excellent heat resistance is provided on the upper and lower surfaces of the recording thin film, and a protective layer for the substrate and adhesive layer is provided.
これら誘電体の熱的な性質により、昇温および急冷、冷
の特性がかわり、記録および消去の特性を選ぶことがで
きる。Depending on the thermal properties of these dielectrics, heating, rapid cooling, and cooling characteristics change, and recording and erasing characteristics can be selected.
発明が解決しようとする課題
薄膜を加熱昇温し、溶融急冷非晶質化および加熱昇温結
晶化の手段を用いる情報記録および消去可能なオーバラ
イド記録媒体における第一の課題は、消去特性である。Problems to be Solved by the Invention The first problem in information recording and erasable override recording media that use means of heating a thin film to raise its temperature, melting, rapidly cooling, and crystallizing by heating and heating is the erasing property. .
第二の課題は記録消去のサイクル特性である。The second issue is the cycle characteristics of recording and erasing.
本発明の目的は記録消去特性のすぐれたサイクル特性の
安定な光ディスクを提供することである。An object of the present invention is to provide an optical disc with excellent recording/erasing characteristics and stable cycle characteristics.
課題を解決するための手段
本発明は、レーザ光等の照射により熱的に薄膜の状態を
変化させて情報を記録および消去する部材において、下
面の誘電体層と上面の誘電体層の材質をかえて、下面側
で基板側の膜厚を大にするとともに、その熱伝導率を上
面の誘電体層の材質より、小に選ぶ構成を有することを
特徴とする光学情報記録再生消去部材を提供するもので
ある。Means for Solving the Problems The present invention provides a material for recording and erasing information by thermally changing the state of a thin film through irradiation with laser light, etc. On the contrary, we provide an optical information recording/reproducing/erasing member characterized in that the thickness of the film on the substrate side is increased on the lower surface side, and the thermal conductivity thereof is selected to be smaller than that of the material of the dielectric layer on the upper surface. It is something to do.
作用
Teを含む非晶質膜は、その融点は代表的なもので40
0°Cから900°Cと広い温度範囲にある。The melting point of an amorphous film containing active Te is typically 40
It has a wide temperature range from 0°C to 900°C.
これらの膜にレーザ光を照射し、昇温徐冷することによ
り結晶化が行える。この温度は、−船釣に融点より低い
結晶化温度領域である。また、この結晶化した膜に高い
パワーレベルのレーザ光ヲアて、その融点以上に加熱す
ると、その部分は溶融し急冷し、再び非晶質化し、マー
クが形成できる。Crystallization can be performed by irradiating these films with laser light and gradually increasing the temperature and cooling. This temperature is in the crystallization temperature range below the melting point. Furthermore, when this crystallized film is heated above its melting point with a laser beam of a high power level, that part melts, rapidly cools, becomes amorphous again, and marks can be formed.
記録マークとして非晶質化を選ぶと、このマークは、記
録薄膜が溶融し、冷却速度が速いほど非晶質状態の均一
なものが得られ、信号振幅が向上する。冷却速度が遅い
場合はマークの中心と周辺で非晶質化の程度に差が発生
する。次に、結晶化消去に際しては、レーザ光の照射に
より、既に記録が行われている非晶質マーク部を結晶化
温度以上に昇温し、結晶化させてこのマークを消去する
。When an amorphous recording mark is selected, the recording thin film melts, and the faster the cooling rate, the more uniform the amorphous state is obtained and the signal amplitude is improved. If the cooling rate is slow, there will be a difference in the degree of amorphization between the center and the periphery of the mark. Next, during crystallization erasing, the temperature of the amorphous mark portion on which recording has already been performed is raised to a temperature higher than the crystallization temperature by irradiation with a laser beam, thereby crystallizing and erasing the mark.
この時、マークが均一に結晶化するときは消去特性が向
上する。しかしながら、記録マークが不均一な場合は結
晶化消去の状態が不均一となり、消去特性が低下する。At this time, when the mark is uniformly crystallized, the erasing characteristics are improved. However, if the recorded marks are non-uniform, the state of crystallization and erasure will be non-uniform, and the erasing characteristics will deteriorate.
実施例
以下本発明の一実施例について、図面を用いて、詳細に
説明する。EXAMPLE Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
記録層である薄膜を形成する基板としては、第1図に示
すようにあらかじめ、レーザ光案内用の溝を形成したポ
リカーボネイト等の樹脂基板あるいは、2P法で溝を形
成したガラス板あるいは、ガラス板に直接溝を形成した
基板を用いる。この表面にあらかじめ耐熱性のすぐれた
誘電体として、熱伝導率が1.6 ・10’ Ca l
/Cm−’Cと小さい、ZnSを主成分とする下面の第
一の無機誘電体層1を形成しておく。この線膨張係数は
7.5×104/’Cである。この上に、Te−Ge−
3bからなる合金薄膜2を形成する。さらにこの記録薄
膜層の上に上面の第二の無1a誘電体層3を設ける。As shown in Figure 1, the substrate on which the thin film that is the recording layer is formed may be a resin substrate such as polycarbonate on which grooves for guiding laser light are formed in advance, a glass plate on which grooves are formed using the 2P method, or a glass plate. A substrate with grooves formed directly on it is used. This surface is preliminarily coated with a dielectric material with excellent heat resistance, which has a thermal conductivity of 1.6 ・10' Cal.
A first inorganic dielectric layer 1 on the lower surface, which is mainly composed of ZnS and has a small value of /Cm-'C, is formed. This linear expansion coefficient is 7.5×10 4 /′C. On top of this, Te-Ge-
3b is formed. Furthermore, a second 1a-free dielectric layer 3 on the upper surface is provided on this recording thin film layer.
この誘電体層としては、下面の材質としては、相異なる
誘電体を用いる。特に熱伝導率の大なるAINを主成分
とする膜を選ぶ。熱伝導率は、約6・10(であり、冷
却速度の向上をはかることが出来る。さらに、この上に
Afからなる反射層4を設ける。膜厚としては、下面の
誘電体を200nm以下に選び、上面の誘電体を110
0n以下に選ぶ。薄膜形成の方法としては、真空蒸着あ
るいは、スパッタ法が使用できる。第二の無機誘電体層
の上に反射層を設けることにより、感度の向上をはかる
こともできる。記録薄膜の膜厚として20nm以下の薄
い膜厚領域を選ぶことが重要である。さらに保護板とし
てポリカーボネイト板を接着剤で密着する。For this dielectric layer, different dielectrics are used as the material for the lower surface. In particular, a film whose main component is AIN, which has high thermal conductivity, is selected. Thermal conductivity is approximately 6.10 (which makes it possible to improve the cooling rate.Furthermore, a reflective layer 4 made of Af is provided on top of this.The thickness of the dielectric on the bottom surface is 200 nm or less. Select and set the top dielectric to 110
Select 0n or less. As a method for forming a thin film, vacuum evaporation or sputtering can be used. Sensitivity can also be improved by providing a reflective layer on the second inorganic dielectric layer. It is important to select a thin film thickness region of 20 nm or less as the film thickness of the recording thin film. Furthermore, a polycarbonate plate is attached with adhesive as a protective plate.
130IIII11のディスクとして、1800rpm
回転でfl−3,43MI(z(7)信号と、f2=1
.0MHzの信号のオーバーライド特性を測定する。オ
ーバーライドは、1ケのサークルスポット1mのレーザ
光により、高いパワーレベル1ロmW、iいパワーレベ
ル8mWのパワーレベル間の変調で、高いパワーレベル
で非晶質化マークを形成し、低いパワーレベルで非晶質
化マークを結晶化して消去する同時記録の方法である。130III11 disc, 1800rpm
Rotation fl-3,43MI (z(7) signal and f2=1
.. Measure the override characteristics of the 0MHz signal. The override is a modulation between the power levels of a high power level of 1 mW and an i.m. power level of 8 mW using a laser beam of one circle spot of 1 m, forming an amorphous mark at a high power level and forming an amorphous mark at a low power level. This is a simultaneous recording method in which the amorphous mark is crystallized and erased.
記録信号のC/N比としては、55dB以上が得られる
。さらに、消去特性として、オーバライド消去30dB
以上が得られる。A C/N ratio of 55 dB or more can be obtained for the recording signal. Furthermore, as an erasure characteristic, override erasure is 30dB.
The above is obtained.
本発明の構成の溝形状の相変化光ディスクについて、オ
ーバライドのサイクル特性を評価する。The override cycle characteristics of the groove-shaped phase change optical disk configured according to the present invention will be evaluated.
特にピットエラーレイトの特性を測定する。In particular, the characteristics of pit error rate are measured.
1000000サイクル以上劣化が見られない。No deterioration was observed after 1,000,000 cycles or more.
発明の効果 以上の構成により、次のような効果がある。Effect of the invention The above configuration has the following effects.
(1) 記録信号振幅が増大し、C/N比は55dB
以上に向上する。(1) Recording signal amplitude increases, C/N ratio is 55dB
Improve above.
(2)記録マークが均一化し、オーバライド消去率が3
0dB以上に向上する。(2) Recorded marks are uniform and the override erasure rate is 3
Improved by more than 0dB.
第1図は本発明の一実施例における光学情報記録再生消
去部材の溝形状断面図である。
1・・・・・・第1の無機誘電体層、2・・・・・・T
c−Ge−5bからなる合金薄膜、3・・・・・・第二
の無機誘電体層、4・・・・・・AIからなる反射層。
代理人の氏名 弁理士 粟野重孝 はか1名/−−−舅
一の然増1呼電ス水1
と −−−Te −Ge −ASbtr+%riA−金
、R)II。
3−−一第:n僻複功宅律1
4−んh鵡ηろ麦ぞ1
第1図FIG. 1 is a sectional view of the groove shape of an optical information recording/reproducing/erasing member in one embodiment of the present invention. 1...First inorganic dielectric layer, 2...T
An alloy thin film made of c-Ge-5b, 3... second inorganic dielectric layer, 4... reflective layer made of AI. Name of agent: Patent attorney Shigetaka Awano, 1 person/---1 father-in-law, 1 call, 1 call, and ---Te -Ge -ASbtr+%riA-Fri, R) II. 3--First: n Fukko Takuritsu 1 4-nh Parrot ro Mugizo 1 Figure 1
Claims (7)
して昇温し、溶融し、急冷し、アモルファス化する性質
とアモルファスの状態を昇温することにより、結晶化す
る性質を有する記録薄膜を用い、前記レーザー光の強度
変調により情報を記録する部材において前記記録薄膜層
の上面およびレーザー光入射側である下面に誘電体層を
有する構成で、前記誘電体層として、上面と下面に相異
なる誘電体を用いることを特徴とする光学情報記録再生
消去部材。(1) Using a recording thin film that has the property of absorbing the energy of laser light, heating up, melting, rapidly cooling, and becoming amorphous, and the property of crystallizing an amorphous state by heating it. , the member for recording information by intensity modulation of laser light has a dielectric layer on the upper surface of the recording thin film layer and the lower surface which is the laser light incident side, and the dielectric layer has different dielectric layers on the upper surface and the lower surface. An optical information recording/reproducing/erasing member characterized by using a body.
選ぶことを特徴とする請求項(1)記載の光学情報記録
再生消去部材。(2) The optical information recording/reproducing/erasing member according to claim (1), wherein the dielectric material is selected such that the thickness of the lower surface is larger than that of the upper surface.
より小さくなるように選ぶことを特徴とする請求項(1
)記載の光学情報記録再生消去部材。(3) Claim (1) characterized in that the dielectric material is selected such that the thermal conductivity of the lower surface is smaller than that of the upper surface.
) The optical information recording/reproducing/erasing member described in ).
用い、上面にAINを主成分とする膜を用いることを特
徴とする請求項(1)記載の光学情報記録再生消去部材
。(4) The optical information recording/reproducing/erasing member according to claim (1), wherein as the dielectric, a film mainly composed of ZnS is used on the lower surface, and a film mainly composed of AIN is used on the upper surface.
設けることを特徴とする請求項(1)記載の光学情報記
録再生消去部材。(5) The optical information recording/reproducing/erasing member according to claim (1), further comprising a reflective film having high thermal conductivity provided on the upper dielectric.
を用いることを特徴とする請求項(1)記載の光学情報
記録再生消去部材。(6) The optical information recording/reproducing/erasing member according to claim (1), wherein a material consisting of Te, Ge, and Sb is used for the recording thin film layer.
ぶことを特徴とする請求項(1)記載の光学情報記録再
生消去部材。(7) The optical information recording/reproducing/erasing member according to claim (1), wherein the recording thin film layer has a thickness of 20 nm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1090174A JP2538046B2 (en) | 1989-04-10 | 1989-04-10 | Optical information recording / reproducing / erasing member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1090174A JP2538046B2 (en) | 1989-04-10 | 1989-04-10 | Optical information recording / reproducing / erasing member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02270145A true JPH02270145A (en) | 1990-11-05 |
JP2538046B2 JP2538046B2 (en) | 1996-09-25 |
Family
ID=13991124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1090174A Expired - Fee Related JP2538046B2 (en) | 1989-04-10 | 1989-04-10 | Optical information recording / reproducing / erasing member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2538046B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02310833A (en) * | 1989-05-24 | 1990-12-26 | Nippon Columbia Co Ltd | Optical information recording medium |
JPH08318679A (en) * | 1996-07-01 | 1996-12-03 | Hitachi Ltd | Phase change recording medium |
US5712833A (en) * | 1993-12-28 | 1998-01-27 | Ogihara; Noriyuki | Durable magneto-optical disk having a rare earth-transition amorphous magneto-optical layer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54156521A (en) * | 1978-05-31 | 1979-12-10 | Asahi Chemical Ind | Picture forming material |
JPS56130394A (en) * | 1980-03-18 | 1981-10-13 | Asahi Chem Ind Co Ltd | Recording material for information |
JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
JPH02195537A (en) * | 1989-01-23 | 1990-08-02 | Matsushita Electric Ind Co Ltd | Component for optical information recording, reproducing and erasing |
-
1989
- 1989-04-10 JP JP1090174A patent/JP2538046B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54156521A (en) * | 1978-05-31 | 1979-12-10 | Asahi Chemical Ind | Picture forming material |
JPS56130394A (en) * | 1980-03-18 | 1981-10-13 | Asahi Chem Ind Co Ltd | Recording material for information |
JPH0256746A (en) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | Information carrier disk |
JPH02195537A (en) * | 1989-01-23 | 1990-08-02 | Matsushita Electric Ind Co Ltd | Component for optical information recording, reproducing and erasing |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02310833A (en) * | 1989-05-24 | 1990-12-26 | Nippon Columbia Co Ltd | Optical information recording medium |
US5712833A (en) * | 1993-12-28 | 1998-01-27 | Ogihara; Noriyuki | Durable magneto-optical disk having a rare earth-transition amorphous magneto-optical layer |
JPH08318679A (en) * | 1996-07-01 | 1996-12-03 | Hitachi Ltd | Phase change recording medium |
Also Published As
Publication number | Publication date |
---|---|
JP2538046B2 (en) | 1996-09-25 |
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