JPH02267267A - Method and device for forming a thin film on film - Google Patents

Abstract

PURPOSE:To prevent the enlargement and complication of the device at the time of conveying a film in a vacuum vessel and forming a thin film on the surface by the vaporized grains by impressing a high-frequency voltage on a film supporting means and treating the film with an electric discharge. CONSTITUTION:The film 4 is delivered from a delivery core 7 in the vacuum vessel 2, wound around a cooling can 3 and wound on a winding core 8. At this time, the vacuum vessel 2 is held at about 1X10<-5>-3X10<-4>Torr, a vaporizing source 6 is heated by a heater 5 to generate vaporized grains, and a thin film is formed on the surface of the film 4. In the device of such structure, a high-frequency power source 9a is connected to the cooling can 3 supporting the film 4, a high-frequency voltage is impressed on the can, and an electric discharge is generated in the vicinity of the can 3. Consequently, the film 4 need not be treated with a glow discharge at different degrees of vacuum before and after the formation of the thin film, the device need not be enlarged or complicated, and an excellent thin film is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a method for forming a thin film on a film and an apparatus used therefor, and more particularly, a method and apparatus for forming a thin film on a film while being conveyed in a vacuum chamber. Regarding improvements.

Technical background of the invention and its problems The back side of the film being conveyed in a vacuum chamber is supported by a supporting means such as a cooling can, and the evaporated particles in the vacuum chamber are deposited on the surface of the film to form a thin film. Methods for forming thin films are known.

In this method of forming a thin film, the film is usually subjected to a glow discharge treatment before and after the deposition of evaporated particles to purify and activate the surface.

To form a thin film on the film surface by subjecting the film surface to such glow discharge treatment, a thin film forming apparatus as shown in FIG. 3 is used. That is, the thin film forming apparatus 1101 includes a pre-processing chamber 102 and a post-processing chamber 103 using glow discharge in the upper part of the inside of the vacuum chamber 2 divided by the partition wall 2a, and a film conveying chamber arranged below each of these processing chambers 102 and 103. It includes a feeding core 7 and a winding core 8 as means, and a cooling can 3 disposed at a substantially intermediate position between the feeding core 7 and the winding core 8.

Further, a vapor deposition source 6 is provided in the lower part of the inside of the vacuum chamber 2, and this vapor deposition source 6 is heated by a heater 5 as an evaporation means.

In such a thin film forming apparatus 101, a power source 9 is connected to a pre-processing chamber 102 and a post-processing chamber 103, so that glow discharge can be generated in these processing chambers 102 and 103. In FIG. 3, 10 is a mask, 12
is the exhaust pipe.

In the thin film forming apparatus 101 as described above, the film 4 sent out from the sending core 7 during thin film formation is wound around the outer peripheral surface of the cooling can 3 via the pretreatment chamber 102, and evaporated particles are formed on the surface of this wound portion. A thin film is formed. The film 4 on which the thin film has been formed is then wound onto the winding core 8 via the post-processing chamber 103. On this occasion,
In the processing chambers 102 and 103, glow discharge is generated at a vacuum level of around 0 and 1 jorr.

By subjecting the film 4 to glow discharge treatment in this way to purify and activate the film surface, the adhesion of the thin film formed on the film surface can be improved.

However, in this glow discharge treatment, the degree of vacuum (I x 10"
It was necessary to carry out the process at a different degree of vacuum (~3 x 10-'1 orr).

Therefore, apparatus 1 to which such a thin film forming method is applied
01, it is necessary to separately provide the pre-treatment chamber 102 and post-treatment chamber 103 in the vacuum chamber 2 as described above. For this reason, the apparatus f1.01 has a problem in that its film transport system is complicated and the apparatus itself is large, making maintenance management complicated.

Furthermore, by performing glow discharge treatment before and after depositing the evaporated particles, the film 4 becomes electrically charged, making it difficult to transport the film smoothly. .

Furthermore, the device m! Due to the enlargement of the processing chamber 101,
Since the distance between 02 and the cooling can 3 becomes longer, the activity of the film 4 pretreated by glow discharge decreases before reaching the cooling can 3, and as a result, the peel strength of the formed thin film decreases. There was a problem.

Purpose of the Invention The present invention aims to solve the above-mentioned problems in the prior art, and prevents the complexity and size of the device, the charging of the film, and the reduction in film activity before thin film formation. The purpose of the present invention is to provide a method for forming a thin film on a film, and a thin film forming apparatus used therein.

Summary of the Invention The method of forming a thin film on a form according to the present invention includes supporting a film conveyed in a vacuum chamber by a support means, and applying a high frequency voltage to the support means to generate an electric discharge on the film. Both surfaces to be treated are characterized in that evaporated particles in a vacuum chamber are deposited on the surface of the film to form a thin film.

The apparatus for forming a thin film on a film according to the present invention includes a conveyance means for conveying the film within a vacuum chamber, an evaporation means for evaporating a vapor deposition source to generate evaporated particles within the vacuum chamber, and a conveyance means for conveying the film within the vacuum chamber. The present invention is characterized by comprising a support means for supporting the back surface of the film to be coated, and a high-frequency voltage application means for applying a high-frequency voltage to the support means.

In the thin film forming method according to the present invention, a high frequency voltage is applied to a supporting means that supports the film being transported during transport, and electric discharge is generated at the vacuum level when forming the thin film, before and after forming the thin film. There is no need to perform glow discharge treatment on the film at different degrees of vacuum. Therefore, it is possible to prevent the device from becoming larger and more complicated, and to prevent the film from being charged with electricity during transportation and from decreasing the activity of the film before forming a thin film.

The thin film forming apparatus according to the present invention does not require a pre-treatment chamber and a post-treatment chamber for performing glow discharge, and therefore has a simple structure and easy maintenance. Further, the film can be transported smoothly, and the peel strength of the obtained thin film is high.

Detailed Description of the Invention The method for forming a thin film on a film according to the present invention will be described below.
I will explain in detail.

In the present invention, a high frequency voltage is applied to the supporting means that supports the film being conveyed, and a thin film is formed on the film while generating electric discharge. This will be explained based on FIGS. 1 and 2. In addition, in FIG. 1 and FIG. 2, common parts are given the same reference numerals.

1 and 2 show a thin film forming apparatus according to the present invention. As shown in FIG. 1, in this thin film forming apparatus 1, a feeding core 7 and a winding core 8, which serve as film transport means, are disposed above the inside of a vacuum chamber 2, and approximately the same as that of the feeding core 7 and winding core 8 are provided. The cooling can 3 is provided at an intermediate lower position. This cooling can 3
constitutes a support means for the film 4.

Further, an evaporation source 6 is provided in the lower part of the inside of the vacuum chamber 2, and this evaporation source 6 is heated by a heater 5 serving as an evaporation means to evaporate and generate evaporated particles.

In this thin film forming apparatus 1, a high frequency power source 9a is connected to the cooling can 3 via a matching box (not shown), so that a high frequency voltage can be applied to the cooling can 3. In FIG. 1, 10 is a mask, 11 is a gas introduction pipe, and 12 is an exhaust pipe.

Although this thin film forming apparatus 1 is provided with a cooling can 3 as a means for supporting the back surface of the film, in the present invention, the means for supporting the film back surface is not particularly limited as long as it is a member capable of supporting the film during conveyance, and may be, for example, an endless belt. etc.

Further, as shown in FIG. 2, the thin film forming apparatus IA may partition the inside of the vacuum chamber 2 into an upper part and a lower part by providing a partition wall 2a, and may further provide an exhaust pipe 31 above the inside of the vacuum tank 2. . In this apparatus IA, the upper and lower parts of the interior of the vacuum chamber 2 can be maintained at different degrees of vacuum during thin film formation.

In order to form a thin film using the thin film forming apparatus 1 or IA as described above, the film 4 is first mounted on a conveying means consisting of a feed core 7 and a winding core 8. At this time, the film 4 is supported from the back side by being wound around the outer peripheral surface of the cooling can 3.

After the film 4 is attached in this way and the vapor deposition source 6 is attached, the pressure inside the vacuum chamber 2 is reduced, and then the vapor deposition source 6 is heated and evaporated.

The degree of vacuum in the vacuum chamber 2 at this time is usually 1 x 10' to 3
X 10-'fort, preferably 1!2.3x10
” 2 x 10-'Iort.

This degree of vacuum is a value in the vicinity of the thin film forming part, and the vicinity of the thin film forming part means an area up to about 1:3 of the straight line distance from the film to the vapor deposition source.

In the present invention, an inert gas such as argon gas may be introduced into the vacuum chamber 2 from the gas introduction tube 11 to maintain the vacuum condition as described above, or oxygen gas may be introduced into the vacuum chamber 2 when performing reactive vapor deposition. A gas such as gas or nitrogen gas may be introduced, or residual gas may be introduced.

In this way, after setting the degree of vacuum in the vacuum chamber 2 to the above conditions and stabilizing the concentration of evaporated particles, transport of the film 4 is started and a high frequency voltage is applied to the cooling can 3.

The high frequency voltage applied to the cooling can is IQQ
It means a voltage having a frequency of KHs or higher. In the present invention, only the high frequency voltage as described above may be applied (or the high frequency voltage may be applied while being superimposed on the DC voltage.

Alternatively, a magnetic field may be applied near the cooling can 3 where discharge occurs to stabilize the discharge.

When such a high frequency voltage is applied to the cooling can 3, a discharge occurs near the cooling can.

At this time, the voltage of the DC component generated in the cooling can, that is, the DC voltage (DC) is 0.2 to 8, preferably 0.
It is desirable that the voltage is in the range of 4 to 6 KV. This DC voltage vDC is set to the same conditions even when only the high frequency voltage is applied or when the high frequency voltage is applied in a superimposed manner on the DC voltage.

The DC voltage vDc induced in the cooling can is 0.2
If it is less than KV, not only will the discharge be unstable,
The collision energy of evaporated particles on the film is reduced,
There is a tendency that a thin film with good stability and adhesion strength cannot be obtained. On the other hand, if the DC voltage vDc exceeds 8 KV, thermal damage to the film tends to increase.

By performing such a discharge treatment, the film 4 sent out from the delivery core 7 is activated by discharge treatment at a portion supported by the cooling can 3 during transportation, that is, a portion where a thin film is formed. Therefore, when forming a thin film, the activity of the film 4 may be reduced or
will not become charged.

Further, the evaporated particles generated from the vapor deposition source 6 due to the discharge are ionized and collide with the surface of the film 4 more strongly than non-ionized particles, so that the peel strength of the formed thin film can be improved.

Note that other ionization means may be used to promote ionization of the evaporated particles.

Effects of the Invention The thin film forming method according to the present invention applies a high frequency voltage to the intermediate support part and generates discharge at the vacuum level when forming the thin film, so the film is subjected to glow discharge treatment before and after forming the thin film. There is no need to carry out this process, and it is possible to prevent an apparatus for forming a thin film from becoming larger and more complicated using this method.

Further, the film is not charged during film transport, and furthermore, since discharge occurs in the thin film formation area, the activity of the film does not decrease before the thin film is formed.

The thin film forming apparatus according to the present invention does not require a pre-treatment chamber and a post-treatment chamber for performing glow discharge, and therefore has a simple structure and easy maintenance. Further, since the film is not charged during transport, the film can be transported smoothly, and the thin film can be formed in a sufficiently active state, so the peel strength of the obtained thin film is high.

EXAMPLES The present invention will be explained below with reference to Examples, but the present invention is not limited to these Examples.

■A 30 μm thick polyparabanic acid film (film 4) and copper (evaporation source 6) are attached to the apparatus IA shown in FIG. IX
After setting the temperature to 10' tau, the vapor deposition source 6 was heated to generate vaporized particles.

Next, while conveying the film 4 at a conveyance speed of 8 m/min, a DC voltage of 3 KV is superimposed on a high frequency voltage of a frequency of 13.56 MHz and a power of IKw, and the cooling can 3 is
was applied to generate a discharge to form a Cu film. The Cu film formed had a thickness of 2 μm.

The peel strength of the Cu film thus formed on the film surface was measured using an apparatus as shown in FIG. In the apparatus shown in FIG. 4, the back surface of the film 4 is fixed to the support base 20 via the adhesive layer 21, and the tip of the adhesive strength measuring rod 23 is bonded to the Cu film 4a via the adhesive layer 24. ,
Next, the adhesive strength measuring rod 23 is pulled up, and the peel strength of the film can be measured using a U gauge (not shown).

Table 1 shows the measurement results using the above measuring device.

Comparative Example 1 A thin film was formed on the film surface in the same manner as in Example 1, except that no voltage was applied to the cooling can 3.

The peel strength of the obtained Cu film was measured in the same manner as in Example 1.

The results obtained are shown in Table 1. The values shown in Table 1 are relative values with the peel strength in Example 1 being 100.

Comparative Example 2 A thin film was formed by equipping the thin film forming apparatus 101 shown in FIG. 3 with the same film 4 and vapor deposition source 6 as in Example 1.

During thin film formation, the pretreatment chamber 102 and the posttreatment chamber 1
Introducing nitrogen gas to 03 and vacuum degree IX10-11ot
It was held at r. Further, the degree of vacuum near the sending core 7 and the winding core 8 was 4×10'tour, and the degree of vacuum near the thin film forming part was 6×10'ton.

The peel strength of the formed thin film was measured in the same manner as in Example 1.

The results obtained are shown in Table 1. Note that the values shown in Table 1 are relative values with the peel strength in Example 1 being 100.

Table 1 1. IA... Thin film forming device 2... Vacuum chamber 3... Cooling can 4.
... Film substrate 5 ... Heater 6 ... Vapor deposition source
7... Feeding core 8... Winding core 9.
・High frequency power supply 10 ・Mask

[Brief explanation of drawings]

1 and 2 are schematic cross-sectional views of the apparatus used in the thin film forming method according to the present invention, FIG. 3 is a schematic cross-sectional view of the apparatus used in the conventional thin film forming method, and FIG. 4 is the peel strength of the thin film. 1 is a schematic diagram showing an apparatus for measuring .

Claims (2)

[Claims] (1) The film being conveyed in the vacuum chamber is supported by a support means, and a high frequency voltage is applied to the support means to generate a discharge to perform discharge treatment on the film, and the surface of the film is placed in the vacuum chamber. A method for forming a thin film on a film, the method comprising forming a thin film by depositing evaporated particles generated from an evaporation source within the film. (2) A conveyance means for conveying the film within the vacuum chamber, an evaporation means for evaporating a deposition source to generate evaporated particles within the vacuum chamber, and a support for supporting the back surface of the film conveyed within the vacuum chamber. 1. An apparatus for forming a thin film on a film, comprising: means for forming a thin film on a film; and a high-frequency voltage applying means for applying a high-frequency voltage to the supporting means.