JPH0225424B2 - - Google Patents
Info
- Publication number
- JPH0225424B2 JPH0225424B2 JP6944484A JP6944484A JPH0225424B2 JP H0225424 B2 JPH0225424 B2 JP H0225424B2 JP 6944484 A JP6944484 A JP 6944484A JP 6944484 A JP6944484 A JP 6944484A JP H0225424 B2 JPH0225424 B2 JP H0225424B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- insulating material
- heat insulating
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は金属蒸気を基板に蒸着させる蒸着装
置の熱しや閉に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to heating and closing of a vapor deposition apparatus for vapor depositing metal vapor onto a substrate.
従来の蒸着装置に使用されているるつぼを第1
図は示す。図において、1はるつぼ、2は金属、
3は複数の小孔、4は金属蒸気、5はフイラメン
ト、6は電源、7は電源、8はグリツド、9はフ
イラメント、10は電源、11は電源、12は加
速電極、13は基板、14は蒸着膜、15は電
源、16はシールド板、17は真空容器である。
The first crucible used in conventional vapor deposition equipment
The figure shows. In the figure, 1 is a crucible, 2 is a metal,
3 is a plurality of small holes, 4 is a metal vapor, 5 is a filament, 6 is a power source, 7 is a power source, 8 is a grid, 9 is a filament, 10 is a power source, 11 is a power source, 12 is an accelerating electrode, 13 is a substrate, 14 1 is a deposited film, 15 is a power source, 16 is a shield plate, and 17 is a vacuum container.
次に動作を説明する。第1図において、フイラ
メント5は電源6によつて加熱され、電源7によ
つて与えられた電圧により電子の衝突を受けてる
つぼ1は加熱される。るつぼ1内の金属2は蒸発
し、小孔3より真空中に噴射する。噴射された金
属蒸気4はフイラメント9、電源10、グリツド
8によつて電子の衝突を受けてイオン化し、加速
電極12と電源15によつて金属蒸気4は加速さ
れ、基板13に射突し蒸着膜14を作る。この
時、るつぼ1は高温になり輻射熱が周囲に放出さ
れる。 Next, the operation will be explained. In FIG. 1, the filament 5 is heated by a power source 6, and the crucible 1, which is bombarded with electrons, is heated by the voltage applied by a power source 7. The metal 2 in the crucible 1 evaporates and is injected into the vacuum through the small hole 3. The injected metal vapor 4 is ionized by collision with electrons by the filament 9, power source 10, and grid 8. The metal vapor 4 is accelerated by the accelerating electrode 12 and the power source 15, and impinges on the substrate 13 for vapor deposition. A membrane 14 is made. At this time, the crucible 1 becomes high in temperature and radiant heat is released to the surroundings.
このため、るつぼ1の外周には輻射熱を反射さ
せるシールド板16を側面と底部に配置してお
り、上部は加速電極12を熱シールド板と共用す
る。しかし、加速電極12はるつぼ1より離れた
位置であるため金属蒸気4が広がつて通るための
開口部が大きくとられている。このためるつぼ1
の噴射面からの輻射熱は開口部通り基板13に到
達して、加熱することになるので、基板13を冷
す必要がある。 For this reason, shield plates 16 for reflecting radiant heat are arranged on the side and bottom of the outer periphery of the crucible 1, and the accelerating electrode 12 is also used as a heat shield plate on the upper part. However, since the accelerating electrode 12 is located at a distance from the crucible 1, the opening through which the metal vapor 4 spreads is made large. Crucible for this purpose 1
Since the radiant heat from the injection surface reaches the substrate 13 through the opening and heats it, it is necessary to cool the substrate 13.
本発明は上記のような欠点をなくすため、るつ
ぼ1から噴出する面上の近傍に小孔3から噴出す
る金属蒸気4をさまたげない第3図に示すような
細長い長方形の穴をあけた断熱材を上面にはり付
け輻射熱が基板に直接届かないようにして、基板
の熱影響を小さくしたものである。
In order to eliminate the above-mentioned drawbacks, the present invention provides a heat insulating material with elongated rectangular holes as shown in FIG. is attached to the top surface to prevent radiant heat from directly reaching the board, reducing the thermal effect on the board.
第2図において、21は断熱材、22は断熱材
21に設けた細長い長方形の穴である。その他は
従来と同じである。 In FIG. 2, 21 is a heat insulating material, and 22 is an elongated rectangular hole provided in the heat insulating material 21. In FIG. Others are the same as before.
るつぼ1の小孔3から噴出する金属蒸気は、小
孔22を通るが、この穴の面積は小さく、るつぼ
1からの輻射熱のほとんどが遮へいされる。 The metal vapor ejected from the small hole 3 of the crucible 1 passes through the small hole 22, but the area of this hole is small and most of the radiant heat from the crucible 1 is shielded.
第4図は他の実施例を示すもので、断熱材23
の開口部は干鳥足状に配列され上面に向つて拡開
した円錐状の複数個の穴24で形成されている。
これによつて、るつぼの小孔間の距離を大きくで
きるので、穴明け加工が容易になる。また、蒸着
中の熱応力による割れも少なくなる。なお、穴2
4は円錐状でなく、円筒状の穴でもよい。 FIG. 4 shows another embodiment, in which the heat insulating material 23
The opening is formed by a plurality of conical holes 24 arranged in a bird's-leg shape and widening toward the top surface.
This allows the distance between the small holes of the crucible to be increased, making drilling easier. Furthermore, cracks due to thermal stress during vapor deposition are also reduced. In addition, hole 2
4 may be a cylindrical hole instead of a conical hole.
この発明によると、断熱材でるつぼからの輻射
熱のほとんどが遮ぎられるので、基板に到達する
熱が非常に少なくなるため、基板への熱の影響を
低減できる。
According to this invention, since most of the radiant heat from the crucible is blocked by the heat insulating material, the amount of heat reaching the substrate is extremely small, so that the influence of heat on the substrate can be reduced.
第1図は従来の薄膜形成装置を示す構成図、第
2図は本発明の一実施例を示す構成図、第3図は
第2図の主要部を示す斜視図、第4図はこの発明
の他の実施例を示す斜視図である。
図において、1はるつぼ、12は加速電極、1
3は基板、21は断熱材、22は穴である。な
お、各図中同一符号は同一又は相当部分を示す。
Fig. 1 is a block diagram showing a conventional thin film forming apparatus, Fig. 2 is a block diagram showing an embodiment of the present invention, Fig. 3 is a perspective view showing the main parts of Fig. 2, and Fig. 4 is a block diagram showing the present invention. FIG. 3 is a perspective view showing another embodiment of the invention. In the figure, 1 is a crucible, 12 is an accelerating electrode, 1
3 is a substrate, 21 is a heat insulating material, and 22 is a hole. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
記るつぼ内の溶融金属の蒸気を複数個の小孔から
真空中に噴射してイオン化し、イオン化された金
属蒸気をさらに加速して基板に衝突させて上記基
板に薄膜を形成させるものにおいて、開口部をも
つた断熱材で上記るつぼの上面を被い、上記小孔
を上記断熱材の開口部に連通するように配列した
ことを特徴とする薄膜形成装置。 2 断熱材の開口部は長方形でるつぼの小孔が複
数個配列されていることを特徴とする特許請求の
範囲第1項記載の薄膜形成装置。 3 断熱材の開口部は干鳥足状に配置されている
ことを特徴とする特許請求の範囲第1項記載の薄
膜形成装置。[Claims] 1. Melting metal in a crucible at high temperature in a vacuum, injecting the vapor of the molten metal in the crucible into the vacuum through a plurality of small holes to ionize the ionized metal vapor. The crucible is further accelerated to collide with the substrate to form a thin film on the substrate, and the upper surface of the crucible is covered with a heat insulating material having an opening, and the small hole is communicated with the opening of the heat insulating material. A thin film forming apparatus characterized in that the thin film is arranged in an array. 2. The thin film forming apparatus according to claim 1, wherein the opening of the heat insulating material is rectangular and has a plurality of crucible small holes arranged therein. 3. The thin film forming apparatus according to claim 1, wherein the openings of the heat insulating material are arranged in a bird's-leg shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6944484A JPS60211067A (en) | 1984-04-06 | 1984-04-06 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6944484A JPS60211067A (en) | 1984-04-06 | 1984-04-06 | Film forming apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60211067A JPS60211067A (en) | 1985-10-23 |
JPH0225424B2 true JPH0225424B2 (en) | 1990-06-04 |
Family
ID=13402812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6944484A Granted JPS60211067A (en) | 1984-04-06 | 1984-04-06 | Film forming apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60211067A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0745711B2 (en) * | 1987-12-10 | 1995-05-17 | 株式会社日立製作所 | High directional vapor deposition equipment |
JP2701363B2 (en) * | 1988-09-12 | 1998-01-21 | 三菱電機株式会社 | Semiconductor device manufacturing method and thin film forming apparatus used therefor |
-
1984
- 1984-04-06 JP JP6944484A patent/JPS60211067A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60211067A (en) | 1985-10-23 |
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