JPH0222973A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH0222973A JPH0222973A JP63174489A JP17448988A JPH0222973A JP H0222973 A JPH0222973 A JP H0222973A JP 63174489 A JP63174489 A JP 63174489A JP 17448988 A JP17448988 A JP 17448988A JP H0222973 A JPH0222973 A JP H0222973A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- solid
- state image
- infrared ray
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000035945 sensitivity Effects 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 16
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910021140 PdSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、固体撮像装置に関するもので、特に赤外線
を撮像するものの構成に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a solid-state imaging device, and particularly to the configuration of an infrared imaging device.
第５図は、従来の赤外線固体撮像装置の構成の一例を示
したものである０図において、１は第１の赤外線固体撮
像素子、２は赤外線固体撮像素子の赤外線検出器アレイ
、３は第２の赤外線固体撮像素子、４は赤外線固体撮像
素子２の赤外線検出器アレイ、５は赤外線用のレンズ、
１３は赤外線用のハーフミラ−である。FIG. 5 shows an example of the configuration of a conventional infrared solid-state imaging device. In FIG. 2 an infrared solid-state image sensor; 4 an infrared detector array of the infrared solid-state image sensor 2; 5 an infrared lens;
13 is a half mirror for infrared rays.
次に動作について説明する。赤外線用のハーフミラ−１
３は赤外線レンズ５からの赤外光を素子ｌと素子３の方
へ２つに分ける。そのため赤外線レンズ５によって素子
１と素子３の両方に赤外像が結像される。Next, the operation will be explained. Half mirror 1 for infrared light
3 divides the infrared light from the infrared lens 5 into two parts toward element 1 and element 3. Therefore, infrared images are formed on both elements 1 and 3 by the infrared lens 5.
ここで素子１と３の赤外線検出器アレイ２と４が画素ピ
ンチの半ピッチ分だけずれるように配置すると、赤外線
レンズ５の側から見ると、素子ｌの赤外線検出器アレイ
２の画素の間に素子３の赤外線検出器アレイ４が配置さ
れることになる。これにより、赤外線固体撮像素子を１
個だけ使用した場合に比べ倍の解像度を得ることが可能
になる。If the infrared detector arrays 2 and 4 of elements 1 and 3 are arranged so as to be shifted by a half pitch of the pixel pinch, then when viewed from the infrared lens 5 side, there is a gap between the pixels of the infrared detector array 2 of element l. An infrared detector array 4 of elements 3 will be arranged. This allows one infrared solid-state image sensor to be
It is possible to obtain twice the resolution compared to when only one is used.
また、赤外線固体撮像素子１，３の上に赤外線フィルタ
を設けたり、赤外線固体撮像素子１，３が互いに異なっ
た分光感度特性の赤外線検出器を持つようにすれば、異
なった波長の光信号を取出すことも可能になる。Furthermore, if an infrared filter is provided on the infrared solid-state image sensors 1 and 3, or if the infrared solid-state image sensors 1 and 3 have infrared detectors with different spectral sensitivity characteristics, optical signals of different wavelengths can be detected. It also becomes possible to take it out.
従来の固体撮像装置は以上のように構成されているので
、２個の赤外線固体撮像素子を使って解像度を上げたり
異なった波長の光信号を別々に取出すためには、複雑な
光学系が必要であった。また光学系も大きなスペースが
必要であった。Conventional solid-state imaging devices are configured as described above, so a complex optical system is required to increase resolution using two infrared solid-state imaging devices or to extract optical signals of different wavelengths separately. Met. The optical system also required a large space.
この発明は、上記のような従来のものの問題点を解消す
るためになされたもので、２個の固体撮像素子を用いて
解像度を上げたり異なった波長の光信号を別々に取出す
ようにする際、光学系を簡単かつスペースの小さいもの
とすることができる固体撮像装置を得ることを目的とす
る。This invention was made in order to solve the problems of the conventional ones as described above. An object of the present invention is to obtain a solid-state imaging device that can have a simple optical system and a small space.
この発明に係る固体撮像装置は、２つの赤外線固体撮像
素子の検出器形成面を互いに向がい合わせて配置したも
のである。In the solid-state imaging device according to the present invention, two infrared solid-state imaging devices are arranged with their detector forming surfaces facing each other.
この発明は、上述のように構成したので、上部の赤外線
固体撮像素子と下部の赤外線固体撮像素子の画素を半ピ
ツチずらせて配置したり、さらには２つの固体撮像素子
の間に赤外線フィルタを設けたり互いに異なった分光感
度特性を持った赤外線固体撮像素子を用いたりすること
により、１つの赤外線固体撮像素子を使用した場合に比
べ倍の解像度を持った赤外線固体撮像装置を実現したり
、さらには２つの赤外線固体撮像素子から異なった波長
の赤外線信号を取出すことも単純な光学系で可能になる
。Since this invention is configured as described above, the pixels of the upper infrared solid-state image sensor and the lower infrared solid-state image sensor are arranged with a half-pitch shift, and furthermore, an infrared filter is provided between the two solid-state image sensors. By using infrared solid-state imaging devices with different spectral sensitivity characteristics, it is possible to realize an infrared solid-state imaging device with twice the resolution compared to the case of using a single infrared solid-state imaging device, and even more. It also becomes possible to extract infrared signals of different wavelengths from two infrared solid-state imaging devices with a simple optical system.
以下、この発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例による固体撮像装置を示し、
図において、１は第１の赤外線固体撮像素子、２は赤外
線固体撮像素子１の赤外線検出器アレイ、３は第２の赤
外線固体撮像素子、４は赤外線固体撮像素子２の赤外線
検出器アレイ、５は赤外線用のレンズである。FIG. 1 shows a solid-state imaging device according to an embodiment of the present invention,
In the figure, 1 is the first infrared solid-state image sensor, 2 is the infrared detector array of the infrared solid-state image sensor 1, 3 is the second infrared solid-state image sensor, 4 is the infrared detector array of the infrared solid-state image sensor 2, and 5 is the infrared detector array of the infrared solid-state image sensor 2. is an infrared lens.
赤外線固体撮像素子１，３はお互いに検出器形成面が向
かい合っている。このような構成を実現する実装方法と
して赤外線固体撮像素子１．３を接着剤等ではり合わせ
てもよいし、また第２図に示すようにバンプを使っては
り合わせてもよい。The infrared solid-state imaging devices 1 and 3 have detector forming surfaces facing each other. As a mounting method for realizing such a configuration, the infrared solid-state image pickup devices 1.3 may be bonded together using an adhesive or the like, or may be bonded together using bumps as shown in FIG.
この第２図において、６はチップｌのＩ１０パッド、７
．８はチップ３上に形成されたパッド、９はパッド６と
７とを結びなおかつチップ１と３を固定するＩｎバンブ
である。パッド７．８はチップ１のＩ１０パッドとなる
。１０はチップ３の■１０パッドである。In this FIG. 2, 6 is the I10 pad of chip l, 7
．． 8 is a pad formed on the chip 3, and 9 is an In bump that reconnects the pads 6 and 7 and fixes the chips 1 and 3. Pad 7.8 becomes the I10 pad of chip 1. 10 is the 10 pad of chip 3.
次に動作について説明する。赤外線レンズ５の焦点面は
チップ１．３の検出器面と一致している。Next, the operation will be explained. The focal plane of the infrared lens 5 coincides with the detector plane of the chip 1.3.
赤外線レンズ５で結像された赤外像は赤外線固体撮像素
子１．３で撮像される。一般にＳｉ半導体上にシヲソト
キバリアダイオードの赤外線検出器アレイとその光信号
を読出す手段とをモノリシックに形成した赤外線固体撮
像素子は、Ｓｉ半導体が赤外光に対し透明であることか
ら、光の入射方向は検出器面でもその裏面でも良い、赤
外線レンズからの赤外光は、チップ１の裏面より入射し
、チップ１で赤外像が撮像される。チップ１で吸収され
なかった赤外光はチップ３で撮像される。The infrared image formed by the infrared lens 5 is captured by the infrared solid-state image sensor 1.3. Generally, an infrared solid-state image sensor, in which an infrared detector array of phosphor barrier diodes and a means for reading out the optical signals thereof are monolithically formed on a Si semiconductor, is transparent to infrared light, so it is difficult to detect light. The infrared light from the infrared lens enters the chip 1 from the back surface, and an infrared image is captured by the chip 1. Infrared light not absorbed by chip 1 is imaged by chip 3.
第３図は赤外線固体撮像素子の画素部の拡大図である。FIG. 3 is an enlarged view of the pixel portion of the infrared solid-state image sensor.
１１は垂直電荷転送部で、赤外線検出器２の光信号を転
送する。垂直電荷転送部１１は赤外光に感度を持たず、
赤外光の吸収も少ない、従って第１図に示したように、
赤外線固体撮像素子１と３の赤外線検出器２と４を半ピ
ツチずらせて配置することにより、チップ１の垂直電荷
転送部を透過した赤外光をチップ３の赤外線検出器４で
検出することが可能となる。A vertical charge transfer section 11 transfers the optical signal from the infrared detector 2. The vertical charge transfer section 11 has no sensitivity to infrared light,
It also absorbs less infrared light, so as shown in Figure 1,
By arranging the infrared detectors 2 and 4 of the infrared solid-state imaging devices 1 and 3 so as to be shifted by half a pitch, the infrared light transmitted through the vertical charge transfer section of the chip 1 can be detected by the infrared detector 4 of the chip 3. It becomes possible.
このように、本実施例によれば、２つの赤外線固体撮像
素子を互いに半ピッチ分ずらせて配置するようにしたの
で、赤外像に対する解像度の向上を構成簡単な光学系で
実現することができる。As described above, according to this embodiment, since the two infrared solid-state imaging devices are arranged with a half-pitch shift from each other, it is possible to improve the resolution of infrared images with an optical system with a simple configuration. .
また上記実施例では解像度の向上のみについて説明した
が、第４図に示すようにチップ１とチップ３との間に赤
外線フィルタ１２を挟んでチップ１とチップ３とが互い
に異なった分光感度特性を持つようにすることにより、
互いに異なった波長の光信号を別々に取出せるようにす
ることも可能である。Further, in the above embodiment, only the improvement in resolution was explained, but as shown in FIG. By having
It is also possible to separately extract optical signals of different wavelengths.
また、チップ１とチップ３そのものがお互いに異なった
分光感度特性を持つようにしてもよく、例えば金属と半
導体で形成されるショットキ接合を赤外線検出器とした
場合、金属と半導体の種類によりショットキ接合のバリ
ヤ高が異なるため、色々な種類の分光感度特性を持った
赤外線検出器が作れる。−例としてチップ１の赤外線検
出器２をＰｔＳｉとＰ形Ｓｔ半導体のショットキ接合で
形成し、チップ３の赤外線検出器４をＰｄＳ ｉまたは
ＩｒＳｉとＰ形Ｓｉ半導体のショットキ接合で形成すれ
ばよく、この場合赤外線フィルタなしで異なった波長の
赤外線を光電変換することができる。Furthermore, the chips 1 and 3 themselves may have different spectral sensitivity characteristics. For example, if a Schottky junction formed of a metal and a semiconductor is used as an infrared detector, the Schottky junction may differ depending on the type of metal and semiconductor. Because the barrier heights of the two types differ, it is possible to create infrared detectors with various types of spectral sensitivity characteristics. - For example, the infrared detector 2 of the chip 1 may be formed of a Schottky junction of PtSi and P-type St semiconductor, and the infrared detector 4 of the chip 3 may be formed of a Schottky junction of PdSi or IrSi and P-type Si semiconductor, In this case, infrared rays of different wavelengths can be photoelectrically converted without an infrared filter.
（発明の効果〕
以上のように、この発明に係る固体撮像素子によれば、
２つの赤外線固体撮像素子を検出器形成面を互いに向か
い合わせて配置するようにしたので、上部の赤外線固体
撮像素子と下部の赤外線固体撮像素子を半ピツチずらせ
て配置したり、さらに２つの赤外線固体撮像素子の間に
赤外線フィルタを設けたり、互いに異なった分光感度特
性を持った赤外線検出器を用いたりすることにより、単
純な光学系により解像度を倍にしたり、異った波長の光
信号を別々に取出したりすることが可能となる。(Effects of the Invention) As described above, according to the solid-state image sensor according to the present invention,
Since the two infrared solid-state image sensors are arranged with their detector forming surfaces facing each other, the upper infrared solid-state image sensor and the lower infrared solid-state image sensor are arranged half a pitch apart, and the two infrared solid-state image sensors By installing an infrared filter between the image sensors or using infrared detectors with different spectral sensitivity characteristics, it is possible to double the resolution with a simple optical system or to separate optical signals of different wavelengths. It becomes possible to take it out.
第１図はこの発明の一実施例による赤外線固体描像装置
の構成を示す図、第２図は第１図の構成を実現する実装
方法の一例を示す図、第３図は赤外線固体撮像素子の画
素部を示す拡大図、第４図はこの発明の他の実施例を示
す図、第５図は従来の赤外線固体描像装置の構成を示す
図である。
図において、１．３は固体撮像素子、２．４は赤外線検
出器、５は赤外線レンズ、６．７はパッド、８．１０は
Ｉ１０パッド、９はバンブである。FIG. 1 is a diagram showing the configuration of an infrared solid-state imaging device according to an embodiment of the present invention, FIG. 2 is a diagram showing an example of a mounting method for realizing the configuration of FIG. 1, and FIG. 3 is a diagram showing an infrared solid-state imaging device. FIG. 4 is an enlarged view showing a pixel portion, FIG. 4 is a view showing another embodiment of the present invention, and FIG. 5 is a view showing the configuration of a conventional infrared solid-state imaging device. In the figure, 1.3 is a solid-state image sensor, 2.4 is an infrared detector, 5 is an infrared lens, 6.7 is a pad, 8.10 is an I10 pad, and 9 is a bump.
Claims (1)
対し感度を有する光電変換部と該光電変換部からの電気
信号を読出す機構とを有する第１、第２の固体撮像素子
を備え、 第１の固体撮像素子上に第２の固体撮像素子を、互いに
光電変換部形成面を向かい合わせて配置してなることを
特徴とする固体撮像装置。(1) In a solid-state imaging device, a first and a second photoelectric conversion unit arranged one-dimensionally or two-dimensionally on a semiconductor substrate and having a sensitivity to infrared rays and a mechanism for reading an electrical signal from the photoelectric conversion unit What is claimed is: 1. A solid-state imaging device comprising: a solid-state imaging device, wherein a second solid-state imaging device is disposed on the first solid-state imaging device with their photoelectric conversion portion forming surfaces facing each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174489A JPH0222973A (en) | 1988-07-12 | 1988-07-12 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174489A JPH0222973A (en) | 1988-07-12 | 1988-07-12 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0222973A true JPH0222973A (en) | 1990-01-25 |
Family
ID=15979380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63174489A Pending JPH0222973A (en) | 1988-07-12 | 1988-07-12 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222973A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0597327A (en) * | 1991-08-27 | 1993-04-20 | Takashi Funabiki | Bobbin for covering |
| WO2000062344A1 (en) * | 1999-04-13 | 2000-10-19 | Hamamatsu Photonics K.K. | Semiconductor device |
| JP2011238773A (en) * | 2010-05-11 | 2011-11-24 | Panasonic Corp | Composite type imaging element and imaging apparatus having the same |
| JP2012104759A (en) * | 2010-11-12 | 2012-05-31 | Fujitsu Ltd | Infrared image sensor and infrared imaging apparatus |
| WO2012111851A1 (en) * | 2011-02-18 | 2012-08-23 | 日本電気株式会社 | Infrared detection sensor array and infrared detection device |
| JP2012216584A (en) * | 2011-03-31 | 2012-11-08 | Hamamatsu Photonics Kk | Photodiode array module, and method of manufacturing the same |
| WO2013064753A1 (en) * | 2010-11-03 | 2013-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Monolithic multispectral visible-and-infrared imager |
| JP2021525896A (en) * | 2018-05-31 | 2021-09-27 | ソル・インコーポレイテッドＳｏｌ Ｉｎｃ． | Large-area sample analyzer for video-based equipment, sample analyzer for video-based equipment that uses differences in medium characteristics, and methods for measuring and analyzing samples using this |
| US12159473B2 (en) | 2018-05-31 | 2024-12-03 | Sol Inc. | Device for analyzing large-area sample based on image, device for analyzing sample based on image by using difference in medium characteristic, and method for measuring and analyzing sample using the same |
-
1988
- 1988-07-12 JP JP63174489A patent/JPH0222973A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0597327A (en) * | 1991-08-27 | 1993-04-20 | Takashi Funabiki | Bobbin for covering |
| WO2000062344A1 (en) * | 1999-04-13 | 2000-10-19 | Hamamatsu Photonics K.K. | Semiconductor device |
| US6872992B2 (en) | 1999-04-13 | 2005-03-29 | Hamamatsu Photonics K.K. | Semiconductor device for detecting wide wavelength ranges |
| JP4786035B2 (en) * | 1999-04-13 | 2011-10-05 | 浜松ホトニクス株式会社 | Semiconductor device |
| JP2011238773A (en) * | 2010-05-11 | 2011-11-24 | Panasonic Corp | Composite type imaging element and imaging apparatus having the same |
| US9245915B2 (en) | 2010-11-03 | 2016-01-26 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Monolithic multispectral visible and infrared imager |
| WO2013064753A1 (en) * | 2010-11-03 | 2013-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Monolithic multispectral visible-and-infrared imager |
| JP2012104759A (en) * | 2010-11-12 | 2012-05-31 | Fujitsu Ltd | Infrared image sensor and infrared imaging apparatus |
| WO2012111851A1 (en) * | 2011-02-18 | 2012-08-23 | 日本電気株式会社 | Infrared detection sensor array and infrared detection device |
| JP2012216584A (en) * | 2011-03-31 | 2012-11-08 | Hamamatsu Photonics Kk | Photodiode array module, and method of manufacturing the same |
| US9496298B2 (en) | 2011-03-31 | 2016-11-15 | Hamamatsu Photonics K.K. | Photodiode array module and method for manufacturing same |
| JP2021525896A (en) * | 2018-05-31 | 2021-09-27 | ソル・インコーポレイテッドＳｏｌ Ｉｎｃ． | Large-area sample analyzer for video-based equipment, sample analyzer for video-based equipment that uses differences in medium characteristics, and methods for measuring and analyzing samples using this |
| US11624899B2 (en) | 2018-05-31 | 2023-04-11 | Sol Inc. | Device for analyzing large-area sample based on image, device for analyzing sample based on image by using difference in medium characteristic, and method for measuring and analyzing sample using the same |
| US12159473B2 (en) | 2018-05-31 | 2024-12-03 | Sol Inc. | Device for analyzing large-area sample based on image, device for analyzing sample based on image by using difference in medium characteristic, and method for measuring and analyzing sample using the same |
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