JPH02196421A - Electrode forming method for silicon carbide semiconductor element - Google Patents
Electrode forming method for silicon carbide semiconductor elementInfo
- Publication number
- JPH02196421A JPH02196421A JP1571089A JP1571089A JPH02196421A JP H02196421 A JPH02196421 A JP H02196421A JP 1571089 A JP1571089 A JP 1571089A JP 1571089 A JP1571089 A JP 1571089A JP H02196421 A JPH02196421 A JP H02196421A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- film
- type
- type sic
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は炭化ケイ素半導体素子のｔＦｉ形成方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for forming tFi in a silicon carbide semiconductor device.
（ロ）従来の技術
炭化ケイ＄（ＳｉＣ）は高温高圧下で動作可能な耐環境
性半導体材料として注目されており、また光学的バンド
ギャップが広く容易にｐｎ接合が形成できることから青
色発光素子材料としても期待されている。(b) Conventional technology Silicon carbide (SiC) is attracting attention as an environment-resistant semiconductor material that can operate under high temperature and high pressure, and is also a material for blue light emitting devices because it has a wide optical band gap and can easily form a pn junction. It is also expected.
斯るＳｉＣには、従来オーミック電極として、１９８７
年秋期応用物理学会予稿集、２９ａ−Ｗ−１，５８６頁
、または同予稿集、２７ｐ−Ｄ−７，６８０頁等に示さ
れている如く、ｐ型ＳｉＣ上に、Ａｌ、またはＡｌ−３
ｉが、ｎ型ＳｉＣ上にＮ＋が用いられている。Such SiC has been used as an ohmic electrode since 1987.
As shown in the Proceedings of the Japan Society of Applied Physics, Fall 2009, 29a-W-1, p. 586, or the same proceedings, 27p-D-7, p. 680, Al or Al-3
i is N+ on n-type SiC.
第２図に従来のＳｉＣ半導体素子の一例を示す。斯るＳ
ｉＣ半導体素子の製造方法は、先ずｎ型ＳｉＣ基板（１
０）を用意し、該ｎ型ＳｉＣ基板（１０）の−主面上に
、ｎ型ＳｉＣ層（１１）、ｐ型ＳｉＣ層（１２）をＬＰ
Ｅ法等のエピタキシャル成長法を用いて順次積層する。FIG. 2 shows an example of a conventional SiC semiconductor device. Such S
The method for manufacturing an iC semiconductor device begins with an n-type SiC substrate (1
0) is prepared, and an n-type SiC layer (11) and a p-type SiC layer (12) are LP-produced on the negative main surface of the n-type SiC substrate (10).
The layers are sequentially stacked using an epitaxial growth method such as the E method.
次いで斯る積層基板をウェットエツチング等で表面処理
した後、ｐ型ＳｉＣ層上にＡｌ−５ｉ電極膜（１３）を
、ｎ型ＳｉＣ基板（１０）の他主面上にＮｉ電極膜（１
４）をそれぞれ真空蒸着する。しかる後、斯る積層基板
にアルゴン雰囲気中にて９００〜１０００℃で５分程度
の熱処理を施すことに よって、各電極膜はＳｉＣと合
金化し、オーミック性を得るものである。Next, after surface-treating the laminated substrate by wet etching or the like, an Al-5i electrode film (13) is formed on the p-type SiC layer, and a Ni electrode film (13) is formed on the other main surface of the n-type SiC substrate (10).
4) are each vacuum-deposited. Thereafter, the laminated substrate is heat-treated at 900 to 1000° C. for about 5 minutes in an argon atmosphere, so that each electrode film is alloyed with SiC to obtain ohmic properties.
（ハ）発明が解決しようとする課題
しかし乍ら、斯る従来方法で電極を形成した場合、特に
ｎ型ＳｉＣ層側の電極において、オーミック性が得られ
ず、順方向電流電圧特性の立上り電圧が高くなる等、素
子特性がばらつくといった問題が生じる。これは、ｎ型
ＳｉＣ層と電極膜の間のコンタクト抵抗が十分低減され
ていないことによるものである。(c) Problems to be Solved by the Invention However, when electrodes are formed using such a conventional method, ohmic properties cannot be obtained, especially in the electrodes on the n-type SiC layer side, and the rising voltage of the forward current-voltage characteristics A problem arises in that element characteristics vary, such as an increase in . This is because the contact resistance between the n-type SiC layer and the electrode film is not sufficiently reduced.
斯る点を解決するために、ｎ型ＳｉＣ層上に高濃度のｎ
型ＳｉＣ層（ｐ”型ＳｉＣ層）をエピタキシャル成長さ
せ、ｎ型ＳｉＣ層（ここではｐ１型ＳｉＣ層）と電極膜
とのコンタクト抵抗の低減を図る方法が考えら仇る。し
かし、この方法では、ｐ１型ＳｉＣ層を形成するための
成長室が別途必要となり、装置が大型化し、製造コスト
が高くなるといった問題が生じる。In order to solve this problem, a high concentration of n is applied on the n-type SiC layer.
A method that can be considered is to epitaxially grow a type SiC layer (p" type SiC layer) and reduce the contact resistance between the n type SiC layer (here, the p1 type SiC layer) and the electrode film. However, with this method, A separate growth chamber is required to form the p1 type SiC layer, resulting in problems such as an increase in the size of the device and an increase in manufacturing cost.
また、ｎ型ＳｉＣ層上に直接Ａｌ膜を被着し、これを熱
処理することによってＡ１をｎ型ＳｉＣ層に拡散させｐ
１型ＳｉＣ層を形成する方法が考えられる。しかし、こ
の方法では形成されるｐ４型ＳｉＣ層が不均一に分布し
、ＳｉＣ表面が荒れてしまうといった問題を有している
。これは、後に電極を形成した時、電流が素子内を不均
一に流れる原因となり、素子特性が低下するため不都合
である。In addition, by depositing an Al film directly on the n-type SiC layer and heat-treating it, Al is diffused into the n-type SiC layer.
A method of forming a type 1 SiC layer is considered. However, this method has the problem that the formed p4 type SiC layer is unevenly distributed and the SiC surface becomes rough. This is disadvantageous because it causes current to flow non-uniformly within the device when electrodes are formed later, resulting in deterioration of device characteristics.
したがって、本発明は均一なｐ＋型ＳｉＣ層を容易に形
成することができ、ｐ型ＳｉＣと電流との間のコンタク
ト抵抗が低減可能な炭化ケイ素半導体素子の電流形成方
法を提供するものである。Therefore, the present invention provides a method for forming a current in a silicon carbide semiconductor device, which can easily form a uniform p+ type SiC layer and can reduce the contact resistance between the p-type SiC and the current.
（ニ）課題を解決するための手段
本発明は、炭化ケイ素半導体素子に電極を形成する方法
であって、上記課題を解決するため、ｐ型炭化ケイ素上
に、炭化ケイ素よりも酸素と強い反応を示す金属膜とＡ
１膜をこの順に積層する工程と、この積層膜を熱処理し
、ｐ型炭化ケイ素表面に高濃度ｐ型炭化ケイ素層を形成
する工程と、上記積層膜を除去する工程と、上記高濃度
ｐ型炭化ケイ素層上にオーミック電極を形成する工程と
、を備えることを特徴とする。(d) Means for Solving the Problems The present invention is a method of forming an electrode on a silicon carbide semiconductor device, and in order to solve the above problems, a method for forming electrodes on p-type silicon carbide that has a stronger reaction with oxygen than silicon carbide. A metal film showing
a step of laminating one film in this order, a step of heat-treating the laminated film to form a high concentration p-type silicon carbide layer on the p-type silicon carbide surface, a step of removing the laminated film, and a step of removing the high concentration p-type silicon carbide layer. forming an ohmic electrode on the silicon carbide layer.
（ホ）作用
本発明者らが検討した結果、ＳｉＣ上に被着されたＡｌ
膜を熱処理し、Ａ１をＳｉＣ中に拡散させる方法におい
て、ｐ“型ＳｉＣ層が不均一に分布し、反応界面が荒れ
るのは、ＳｉＣ表面に不均一に生成している自然酸化膜
に起因するものと判明した。(e) Effect As a result of studies by the present inventors, Al deposited on SiC
In the method of heat-treating the film and diffusing A1 into SiC, the p" type SiC layer is distributed non-uniformly and the reaction interface becomes rough due to the natural oxide film that is non-uniformly formed on the SiC surface. It turned out to be something.
そこで本発明方法は、ｐ型ＳｉＣ層にＡ１膜を積層する
前に、ＳｉＣよりも酸素と強い反応を示す金属膜を積層
することによって、当該金属膜はｐ型ＳｉＣ表面に生成
された自然酸化膜と反応し、当該自然酸化膜を還元する
。Therefore, in the method of the present invention, before stacking the A1 film on the p-type SiC layer, by stacking a metal film that has a stronger reaction with oxygen than SiC, the metal film is removed from the natural oxidation generated on the p-type SiC surface. Reacts with the film and reduces the natural oxide film.
（へ）実施例
第１図は本発明方法の一実施例を示し、ＳｉＣ発光ダイ
オードの製造工程別断面図である。以下、図を参照して
本発明方法を説明する。(F) Embodiment FIG. 1 shows an embodiment of the method of the present invention, and is a sectional view of each manufacturing process of a SiC light emitting diode. The method of the present invention will be explained below with reference to the drawings.
先ず、第１図（ａ）に示す如く、ｎ型ＳｉＣ基板（１）
を用意し、該ｎ型ＳｉＣ基板（１）の−主面上に、ｎ型
ＳｉＣ層（２）及びｎ型ＳｉＣ層（３）を周知のＬＰＥ
法、ＣＶＤ法等で順次エピタキシャル成長させる。First, as shown in FIG. 1(a), an n-type SiC substrate (1)
was prepared, and an n-type SiC layer (2) and an n-type SiC layer (3) were formed on the main surface of the n-type SiC substrate (1) using a well-known LPE process.
Epitaxial growth is performed sequentially using a method such as a method, a CVD method, or the like.
次に、斯る積層基板の表面をウェットエツチングにより
清浄化する。このエツチング処理後、ＳｉＣ表面を分析
したところ、表面には〜１００人程度０自然酸化膜が生
成されていた。即ち、自然酸化膜はＳｉＣ表面を清浄化
したのち、直ちに雰囲気中の酸素と結合して生成される
ものであり、回避することは困難である。したがって、
本実施例では、斯る自然酸化膜による悪影響を避けるた
め次のような手段を用いる。Next, the surface of the laminated substrate is cleaned by wet etching. After this etching treatment, the SiC surface was analyzed, and it was found that about 100 natural oxide films had been formed on the surface. That is, a natural oxide film is formed by combining with oxygen in the atmosphere immediately after cleaning the SiC surface, and is difficult to avoid. therefore,
In this embodiment, the following means are used to avoid the adverse effects of such a natural oxide film.
上述したＳｉＣ表面の清浄化の後、第１図（ｂ）に示す
如く、ｎ型ＳｉＣ層（３）上に、ＳｉＣよりも強く酸素
と反応する金属、例えばＴｉ膜（４）を膜厚３００〜３
０００人程度真空蒸着し、更にこめ上にＡｌ膜（５）を
膜厚５００〜１００００人程度真空蒸着する。この時、
Ｔｉ膜（４）はｎ型ＳｉＣ層（３）表面に生成されてい
る自然酸化膜中の酸素と反応し、自然酸化膜を還元する
。After cleaning the SiC surface as described above, as shown in FIG. 1(b), a metal that reacts more strongly with oxygen than SiC, such as a Ti film (4), is deposited on the n-type SiC layer (3) to a thickness of 300 mm. ~3
The aluminum film (5) is then vacuum-deposited on the temple to a thickness of about 500 to 10,000 people. At this time,
The Ti film (4) reacts with oxygen in the natural oxide film formed on the surface of the n-type SiC layer (3) and reduces the natural oxide film.
次いで、斯る積層基板を９００〜１０００℃で熱処理す
る。これにより、Ａｌ膜（５）中のＡ１１１Ｔｉ膜（４
）を通過し、ｐ型ＳｉＣ層（３）内に拡散する。Next, such a laminated substrate is heat-treated at 900 to 1000°C. As a result, the A111Ti film (4) in the Al film (5)
) and diffuses into the p-type SiC layer (3).
本実施例においては、ｐ型ＳｉＣ層（３）上の自然酸化
膜は還元され存在しないので、Ａ１はｐ型ＳｉＣ層（３
）内に均一に拡散する。これにより、第１図（ｃ）に示
す如く、ｐ型ＳｉＣ層（３）表面には、高濃度に不純物
がドーピングされたｐ＋型Ｓ１Ｃ層（６）が、均一に形
成される。In this example, since the natural oxide film on the p-type SiC layer (3) is reduced and does not exist, A1 is the p-type SiC layer (3).
) evenly diffused within. As a result, as shown in FIG. 1(c), a p+ type S1C layer (6) doped with impurities at a high concentration is uniformly formed on the surface of the p type SiC layer (3).
しかる後、第１図（ｄ）に示す如く、ｐ“型ＳｉＣ層（
６）上のＴ１膜（４）及び残存するＡｌ膜（５）をフッ
酸系エツチング液、例えばフッ酸：硝酸＝１＝１の混合
液を用いてエツチング除去する。After that, as shown in FIG. 1(d), a p" type SiC layer (
6) Remove the upper T1 film (4) and remaining Al film (5) by etching using a hydrofluoric acid-based etching solution, for example, a mixed solution of hydrofluoric acid:nitric acid=1=1.
最後に、第１図（ｅ）に示す如く、ｐ“型ＳｉＣ層（６
）上に、ｎ型オーミック電極、例えば膜厚５００人のＴ
ｉ膜と膜厚５０００人のＡｌ膜をこの順に積層したＡｌ
／Ｔｉｔ極膜（７）を、また、ｎ型ＳｉＣ基板（１）の
他主面上に、ｎ型オーミック電極、例えば、膜厚５００
０人のＮｉ１ｌ極膜（８）を夫々真空蒸着し、これらを
９００〜１０００人で約５分間熱処理を施す。これによ
り各電極膜はＳｉＣと合金化し、オーミック性を得る。Finally, as shown in FIG. 1(e), a p" type SiC layer (6
) on top of the n-type ohmic electrode, for example, a film thickness of 500 mm.
An Al film made by laminating an i film and an Al film with a thickness of 5000 in this order.
/Tit electrode film (7) is also formed on the other main surface of the n-type SiC substrate (1) with an n-type ohmic electrode, e.g.
A Ni11 electrode film (8) is vacuum-deposited by 0 people, respectively, and heat-treated for about 5 minutes by 900 to 1000 people. As a result, each electrode film is alloyed with SiC to obtain ohmic properties.
本実施例ではＳｉＣよりも酸素と強く反応する金属とし
てＴｉ膜（４）を用いたが、他に、Ｍｏ、Ｐｄ、Ｔａ、
Ｃｒ、Ｗを用いても同様の効果が得られる。In this example, Ti film (4) was used as a metal that reacts more strongly with oxygen than SiC, but other metals such as Mo, Pd, Ta,
Similar effects can be obtained by using Cr or W.
また、本実施例ではＳｉＣ発光ダイオードについて説明
したが、本発明方法はＳｉＣ発光ダイオードの電極形成
に限ることなく、ＳｉＣを用いたバイポーラトランジス
タ、ＦＥＴ等他のＳｉＣ半導体素子の電極形成にも適用
できることは勿論である。Furthermore, although this embodiment describes a SiC light emitting diode, the method of the present invention is not limited to forming electrodes of SiC light emitting diodes, but can also be applied to forming electrodes of other SiC semiconductor devices such as bipolar transistors and FETs using SiC. Of course.
（ト）発明の効果
本発明方法によれば、ｐ型ＳｉＣ層に、Ａ１膜を積層す
る前に、ＳｉＣよりも酸素と強い反応を示す金属膜を積
層することによって、当該金属膜がｐ型ＳｉＣ表面に生
成されている自然酸化膜を還元する。これによって、Ａ
１膜中のＡｌがｐ型ＳｉＣ表面に均一に熱拡散していく
ことができるため、表面が荒れることなく均一なｐ４型
ＳｉＣ層が形成される。その結果、ｐ＋型ＳｉＣ層の上
に形成される電極膜から素子内に電流が均一に注入され
ることとなり、さらにｐ“型ＳｉＣと電極との間のコン
タクト抵抗が低減されるため、素子特性は安定する。ま
た本発明方法によれば、従来の装置を用いて容易にｐ＋
型ＳｉＣ層を形成することができるので、装置が大型化
することはない。(g) Effects of the Invention According to the method of the present invention, before laminating the A1 film on the p-type SiC layer, by laminating a metal film that reacts more strongly with oxygen than SiC, the metal film becomes p-type. The natural oxide film formed on the SiC surface is reduced. By this, A
Since Al in one film can uniformly thermally diffuse onto the p-type SiC surface, a uniform p4-type SiC layer is formed without surface roughening. As a result, current is uniformly injected into the device from the electrode film formed on the p+ type SiC layer, and the contact resistance between the p" type SiC and the electrode is reduced, which improves the device characteristics. Furthermore, according to the method of the present invention, p +
Since a type SiC layer can be formed, the device does not become larger.
第１図は本発明方法の一実施例を示す工程別断面図、第
２図は従来装置を示す断面図である。FIG. 1 is a sectional view of each step showing an embodiment of the method of the present invention, and FIG. 2 is a sectional view of a conventional apparatus.
Claims (1)
いて、ｐ型炭化ケイ素上に、炭化ケイ素よりも酸素と強
い反応を示す金属膜とＡｌ膜をこの順に積層する工程と
、この積層膜を熱処理し、ｐ型炭化ケイ素表面に高濃度
ｐ型炭化ケイ素層を形成する工程と、上記積層膜を除去
する工程と、上記高濃度ｐ型炭化ケイ素層上にオーミッ
ク電極を形成する工程と、を備えることを特徴とする炭
化ケイ素半導体素子の電極形成方法。(1) A method for forming an electrode on a silicon carbide semiconductor device includes the step of laminating, in this order, a metal film and an Al film, which react more strongly with oxygen than silicon carbide, on p-type silicon carbide, and heat-treating this laminated film. and includes the steps of forming a high concentration p-type silicon carbide layer on the p-type silicon carbide surface, removing the laminated film, and forming an ohmic electrode on the high concentration p-type silicon carbide layer. A method for forming electrodes of a silicon carbide semiconductor device, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1571089A JPH02196421A (en) | 1989-01-25 | 1989-01-25 | Electrode forming method for silicon carbide semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1571089A JPH02196421A (en) | 1989-01-25 | 1989-01-25 | Electrode forming method for silicon carbide semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02196421A true JPH02196421A (en) | 1990-08-03 |
Family
ID=11896326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1571089A Pending JPH02196421A (en) | 1989-01-25 | 1989-01-25 | Electrode forming method for silicon carbide semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196421A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994006153A1 (en) * | 1992-09-10 | 1994-03-17 | Cree Research, Inc. | Ohmic contact structure between platinum and silicon carbide |
| JP2006261624A (en) * | 2005-03-14 | 2006-09-28 | Denso Corp | Method for forming ohmic connection of wideband semiconductor |
| JP2008078434A (en) * | 2006-09-22 | 2008-04-03 | Toyota Motor Corp | Semiconductor device and manufacturing method thereof |
| JP2008109150A (en) * | 2007-11-30 | 2008-05-08 | Denso Corp | Silicon carbide semiconductor device and manufacturing method thereof |
| WO2010082264A1 (en) * | 2009-01-15 | 2010-07-22 | 昭和電工株式会社 | Silicon carbide semiconductor device and method for producing silicon carbide semiconductor device |
-
1989
- 1989-01-25 JP JP1571089A patent/JPH02196421A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994006153A1 (en) * | 1992-09-10 | 1994-03-17 | Cree Research, Inc. | Ohmic contact structure between platinum and silicon carbide |
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| US5409859A (en) * | 1992-09-10 | 1995-04-25 | Cree Research, Inc. | Method of forming platinum ohmic contact to p-type silicon carbide |
| JP2006261624A (en) * | 2005-03-14 | 2006-09-28 | Denso Corp | Method for forming ohmic connection of wideband semiconductor |
| JP2008078434A (en) * | 2006-09-22 | 2008-04-03 | Toyota Motor Corp | Semiconductor device and manufacturing method thereof |
| JP2008109150A (en) * | 2007-11-30 | 2008-05-08 | Denso Corp | Silicon carbide semiconductor device and manufacturing method thereof |
| WO2010082264A1 (en) * | 2009-01-15 | 2010-07-22 | 昭和電工株式会社 | Silicon carbide semiconductor device and method for producing silicon carbide semiconductor device |
| JP2010165838A (en) * | 2009-01-15 | 2010-07-29 | Showa Denko Kk | Silicon carbide semiconductor device and method of manufacturing the same |
| US8466474B2 (en) | 2009-01-15 | 2013-06-18 | Showa Denko K.K. | Silicon carbide semiconductor device and method of producing silicon carbide semiconductor device |
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