JPH02187305A - Wafer dividing blade - Google Patents
Wafer dividing bladeInfo
- Publication number
- JPH02187305A JPH02187305A JP1006839A JP683989A JPH02187305A JP H02187305 A JPH02187305 A JP H02187305A JP 1006839 A JP1006839 A JP 1006839A JP 683989 A JP683989 A JP 683989A JP H02187305 A JPH02187305 A JP H02187305A
- Authority
- JP
- Japan
- Prior art keywords
- blade
- cross
- wafer dividing
- sectional
- sectional structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 5
- 238000005336 cracking Methods 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
ｒ産業上の利用分野〕
この発明は半導体装置を切断・分割するためのブレード
に関するものである。[Detailed Description of the Invention] r Industrial Application Field] This invention relates to a blade for cutting and dividing semiconductor devices.
第２図（ａ） 、 （ｂ）は従来のブレードの断面図、
第３図（ａ） 、 （ｂ）は従来のブレードによる基板
の切断工程の断面図を示す。図中、（財）は第１のブレ
ード、（イ）は第２のブレード、四は基板である。Figures 2 (a) and (b) are cross-sectional views of conventional blades;
FIGS. 3(a) and 3(b) show cross-sectional views of a conventional cutting process of a substrate using a blade. In the figure, (goods) is the first blade, (a) is the second blade, and 4 is the substrate.
次に動作について説明する。第３図（ｂ）に示す様に基
板＠の端面を面取りを行なうことはチップの欠けやクラ
ックを防止する上で非常に有効な手段で、このような断
面形状は下記のような手順で形成される。先ず第２図（
ａ）に示す様な断面形状の第１のブレード？υを用いて
ダイシングを行なうと、第３図（ａ）に示される様な断
面形状が得られる。続いて、第２図（ｂ）に示される断
面形状を持つ第２のブレード（ハ）を用いてダイシング
を行うことにより、第３図（ｂ）に示すような所望の断
面形状を得ることが出来る。Next, the operation will be explained. Chamfering the end face of the board as shown in Figure 3(b) is a very effective means to prevent chips from chipping and cracking, and such a cross-sectional shape can be formed using the following procedure. be done. First, let's look at Figure 2 (
The first blade has a cross-sectional shape as shown in a)? When dicing is performed using υ, a cross-sectional shape as shown in FIG. 3(a) is obtained. Subsequently, by performing dicing using a second blade (c) having the cross-sectional shape shown in FIG. 2(b), it is possible to obtain the desired cross-sectional shape as shown in FIG. 3(b). I can do it.
従来のウェハ分割用ブレードは以上の様に構成されてい
たので、第３図（ｂ）に示される様な断面構造を得るた
めには２枚のブレードが必要で、工程が複雑で面倒であ
る等の問題点があった。Conventional wafer dividing blades were constructed as described above, so two blades were required to obtain the cross-sectional structure shown in Figure 3(b), making the process complicated and troublesome. There were problems such as.
この発明は上記のような問題点を解消するためになされ
たもので、−回の工程で第３図（ｂ）に示す様な断面形
状を形成出来るブレードを得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and its object is to obtain a blade that can form a cross-sectional shape as shown in FIG. 3(b) in the second step.
この発明に係るウェハ分割用ブレードはブレードの途中
からテーパー状に厚みを厚くしたものである。The wafer dividing blade according to the present invention has a thickness that is tapered from the middle of the blade.
この発明におけるウェハ分割用ブレードは先端の薄いブ
レードウェハ分割が行なわれ、テーパー部によって面取
りが同時に行なわれる。The wafer dividing blade according to the present invention has a thin tip for dividing the wafer, and simultaneously performs chamfering using the tapered portion.
以下、この発明の一実施例を図について説明する。第１
図（ａ）はこの発明の一実施例であるウェハ分割用ブレ
ードの断面図、＠１図（ｂ）はウェハの断面形状を示す
断面図で、図において、（１）はブレードで、αυはブ
レード（１）の先端の第１のブレード部、（６）は第１
のブレード部ａつの途中に設けられた第２のブレード部
、（３）は基板を示す。An embodiment of the present invention will be described below with reference to the drawings. 1st
Figure (a) is a cross-sectional view of a wafer dividing blade that is an embodiment of the present invention, and Figure (b) is a cross-sectional view showing the cross-sectional shape of a wafer. In the figure, (1) is the blade, and αυ is The first blade part at the tip of the blade (1), (6) is the first blade part.
The second blade part (3) is provided in the middle of the second blade part a, and the reference numeral (3) indicates the substrate.
次に動作について説明する。Next, the operation will be explained.
この発明のウェハ分割用ブレード（１）は厚みが一定の
第１のブレード部ａυと、先端がテーパー状の第２のブ
レード部＠より構成されており、その断面構造は第１図
（ａ）に示す様になっている。このブレード（１）を用
いて基板（３）を分割すると第１図（ｂ）に示される様
な断面構造を１回の工程で形成することが出来る。The wafer dividing blade (1) of the present invention is composed of a first blade part aυ having a constant thickness and a second blade part @ having a tapered tip, and its cross-sectional structure is shown in FIG. 1(a). It looks like this. By dividing the substrate (3) using this blade (1), a cross-sectional structure as shown in FIG. 1(b) can be formed in one step.
なお、上記実施例では第１図（ａ）の断面構造を得るた
めに３枚のブレードαη、（２）を重ね合わして形成し
ているが、一体止してもよい。また、テーパーの形状は
直線的に広くなっている場合を示したが、別の形状たと
えば曲線であってもよい。In the above embodiment, three blades αη, (2) are formed by overlapping each other in order to obtain the cross-sectional structure shown in FIG. 1(a), but they may be fixed together. Further, although the shape of the taper is shown as being wide in a straight line, it may be in another shape, such as a curve.
以上のようにこの発明によれば、ウェハ分割用ブレード
と面取り用ブレードが一体化されているので工程が簡略
化される効果がある。As described above, according to the present invention, the wafer dividing blade and the chamfering blade are integrated, which has the effect of simplifying the process.
第１図（ａ）はこの発明の一実施例によるブレードの断
面図、第１図（ｂ）はこの発明の一実施例である基板の
切断断面図、第２図は従来のブレードの断面図、第３図
は従来の基板の切断断面図を示す。
図中（１）はブレード、０υは第１のブレード部、ＩＪ
Ｉ）は第２のブレード部、（３）は基板を示す。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1(a) is a cross-sectional view of a blade according to an embodiment of the present invention, FIG. 1(b) is a cross-sectional view of a substrate according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a conventional blade. , FIG. 3 shows a cutaway sectional view of a conventional substrate. In the figure (1) is the blade, 0υ is the first blade part, IJ
I) shows the second blade part, and (3) shows the substrate. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
の先端から所望の位置までの厚さが一定でかつ所望の位
置からテーパー状に厚さが増大していることを特徴とす
るウェハ分割用ブレード。A wafer dividing blade for cutting substrates such as semiconductors, characterized in that the thickness from the tip of the blade to a desired position is constant and the thickness increases in a tapered shape from the desired position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1006839A JPH02187305A (en) | 1989-01-13 | 1989-01-13 | Wafer dividing blade |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1006839A JPH02187305A (en) | 1989-01-13 | 1989-01-13 | Wafer dividing blade |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02187305A true JPH02187305A (en) | 1990-07-23 |
Family
ID=11649411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1006839A Pending JPH02187305A (en) | 1989-01-13 | 1989-01-13 | Wafer dividing blade |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02187305A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04189457A (en) * | 1990-11-21 | 1992-07-07 | Seiko Electronic Components Ltd | Chamfering process method of rectangular member |
| JPH06216241A (en) * | 1993-01-20 | 1994-08-05 | Disco Abrasive Syst Ltd | Cutting of wafer and the like |
| JP2006305922A (en) * | 2005-04-28 | 2006-11-09 | Kyocera Kinseki Corp | Dicing blade and optical low-pass filter manufacturing method using the same |
| JP2011137375A (en) * | 2011-04-15 | 2011-07-14 | Japan Racing Association | Method of regenerating surface body |
| CN109849204A (en) * | 2019-01-25 | 2019-06-07 | 云南蓝晶科技有限公司 | A kind of bevelling processing method of sapphire wafer |
| JP2020113584A (en) * | 2019-01-08 | 2020-07-27 | 豊田合成株式会社 | Manufacturing method for light-emitting device |
-
1989
- 1989-01-13 JP JP1006839A patent/JPH02187305A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04189457A (en) * | 1990-11-21 | 1992-07-07 | Seiko Electronic Components Ltd | Chamfering process method of rectangular member |
| JPH06216241A (en) * | 1993-01-20 | 1994-08-05 | Disco Abrasive Syst Ltd | Cutting of wafer and the like |
| JP2006305922A (en) * | 2005-04-28 | 2006-11-09 | Kyocera Kinseki Corp | Dicing blade and optical low-pass filter manufacturing method using the same |
| JP4741280B2 (en) * | 2005-04-28 | 2011-08-03 | 京セラキンセキ株式会社 | Manufacturing method of optical low-pass filter |
| JP2011137375A (en) * | 2011-04-15 | 2011-07-14 | Japan Racing Association | Method of regenerating surface body |
| JP2020113584A (en) * | 2019-01-08 | 2020-07-27 | 豊田合成株式会社 | Manufacturing method for light-emitting device |
| CN109849204A (en) * | 2019-01-25 | 2019-06-07 | 云南蓝晶科技有限公司 | A kind of bevelling processing method of sapphire wafer |
| CN109849204B (en) * | 2019-01-25 | 2021-05-18 | 云南蓝晶科技有限公司 | Chamfering processing method of sapphire wafer |
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