CN109849204A - A kind of bevelling processing method of sapphire wafer - Google Patents
A kind of bevelling processing method of sapphire wafer Download PDFInfo
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- CN109849204A CN109849204A CN201910075629.5A CN201910075629A CN109849204A CN 109849204 A CN109849204 A CN 109849204A CN 201910075629 A CN201910075629 A CN 201910075629A CN 109849204 A CN109849204 A CN 109849204A
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- Prior art keywords
- sapphire wafer
- bevelling
- processing method
- carving machine
- sapphire
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Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 111
- 239000010980 sapphire Substances 0.000 title claims abstract description 111
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000003801 milling Methods 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 11
- 239000012459 cleaning agent Substances 0.000 claims description 10
- 230000002950 deficient Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000011010 flushing procedure Methods 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 239000002738 chelating agent Substances 0.000 claims description 4
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000009991 scouring Methods 0.000 claims description 3
- 241001062009 Indigofera Species 0.000 claims description 2
- 239000006210 lotion Substances 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 76
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to high-grade numerical control equipment and Computerized Numerical Control processing technology field, the bevelling processing method of specifically a kind of sapphire wafer carries out local bevelling using fault location of the carving machine to sapphire wafer and processes；Local bevelling processing is carried out to sapphire wafer by carving machine, can not only prevent sapphire wafer is subsequent the case where chipping occur, moreover it is possible to avoid the diameter bevelling of sapphire wafer exceeded, reduce the disqualification rate of sapphire wafer, and then reduce production cost；To solve at present, used traditional chipping restorative procedure can be to the problem that sapphire wafer whole circumference consumes, and causes integral diameter exceeded.
Description
Technical field
The present invention relates to high-grade numerical control equipment and Computerized Numerical Control processing technology field, the bevelling of specifically a kind of sapphire wafer adds
Work method.
Background technique
Sapphire wafer is since material fragility is big, and edge is easy to produce breakage in process, and subsequent processing is arrived in circulation
It can be easy to produce chipping even sliver, influence yield, while also increasing processing cost.Industry carries out extensively in process
Bevelling eliminates edge micro breakage, reduces edge stress, keeps the smooth of the edge mellow and full, and the edge during reduction following process is broken
Damage.Traditional chipping restorative procedure is usually used at present, is that bevelling processing is carried out to the whole circumference of sapphire wafer, in this way
Sapphire wafer whole circumference will be consumed, be easy to cause integral diameter exceeded.
Summary of the invention
The purpose of the present invention is to provide a kind of bevelling processing methods of sapphire wafer, to solve used at present pass
The chipping restorative procedure of system can be to the problem that sapphire wafer whole circumference consumes, and causes integral diameter exceeded.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of bevelling processing method of sapphire wafer carries out local bevelling using fault location of the carving machine to sapphire wafer and adds
Work.
Preferably, further technical solution is, the fault location of the sapphire wafer is located at the outer of sapphire wafer
On circle.
Further technical solution is that the local bevelling processing of the carving machine successively includes: calibration defective locations, sets
Determine the width, setting milling number, X/Y plane progress milling, measurement and cleaning in carving machine of milling.
Further technical solution is that the calibration defective locations are that sapphire wafer is first fixed on adding for carving machine
On work platform, then the fault location of sapphire wafer is detected by the fault detection equipment on carving machine, is passing through finishing impression
Processing cutter head is moved to the position of the fault location of sapphire wafer by the central control system of machine.
Further technical solution is that motion profile of the processing cutter head of the carving machine in X/Y plane milling is in arc
Shape.
Further technical solution is that the width of each milling is 0.005-0.02mm.
Further technical solution is that the cleaning includes the following steps:
S1, initial flush is carried out to the sapphire wafer after bevelling using clear water；
S2, using cleaning agent the sapphire wafer after initial flush is cleaned in rinse bath；
S3, using clear water secondary flushing is carried out to the sapphire wafer after cleaning again, Sapphire wafer surface is remaining clear
Lotion is rinsed well；
S4, the sapphire wafer after secondary flushing is cleaned using dehydrated alcohol；
S5, the sapphire wafer after scouring is dried up using hair dryer.
Further technical solution is that the cleaning agent is alkaline cleaner, including carbonate, silicate, phosphate
And chelating agent.
Further technical solution is the diameter for being measured as measuring the sapphire wafer after local bevelling, including
The scale direction along measuring scale of sapphire wafer is placed, is stopped two sides using two baffles, and two baffles
Closely with the graduation mark of measuring scale, the spacing on measuring scale between two baffles is read.
Further technical solution is that the result of the measurement is most short using the sapphire wafer after measuring local bevelling
Diameter value.
Compared with prior art, the beneficial effects of the present invention are: carrying out local bevelling to sapphire wafer by carving machine
Processing, can not only prevent sapphire wafer is subsequent the case where chipping occur, moreover it is possible to and avoid the diameter bevelling of sapphire wafer exceeded,
The disqualification rate of sapphire wafer is reduced, and then reduces production cost.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below according to embodiment, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
The present invention provides a kind of bevelling processing method of sapphire wafer, specifically can use carving machine to sapphire wafer
Fault location carry out local bevelling processing.
Local bevelling processing is carried out to sapphire wafer by carving machine, can not only prevent sapphire wafer is subsequent to collapse
The case where side, moreover it is possible to avoid the diameter bevelling of sapphire wafer exceeded, reduce the disqualification rate of sapphire wafer, and then reduce life
Produce cost.
And bevelling processing only is carried out to part, processing efficiency can also be promoted, originally to the entire circle of sapphire wafer
When the method for Zhou Jinhang bevelling processes a piece of sapphire wafer, the time for needing to process is about 130 seconds, and uses local bevelling
When method carries out bevelling processing to sapphire wafer, it is only necessary to 70 seconds, improve production efficiency, reduce human cost.
The fault location of sapphire wafer is located in the outer circle of sapphire wafer, it can using carving machine to sapphire wafer
Outer circle carry out bevelling processing, avoid sapphire wafer from generating the harm such as chipping.
Carrying out local bevelling processing using fault location of the carving machine to sapphire wafer can specifically include, and demarcate defect
Position, the width for setting milling, setting milling number, X/Y plane progress milling, measurement and cleaning in carving machine, the above process
Successively carry out.In processing, also needs that carving machine is arranged not withdrawing and handle.
It first has good positioning the defective locations of sapphire wafer, the milling width then determined when according to the width of defect, if
Fixed suitable milling number, then the X/Y plane using the cutter head of carving machine in carving machine carries out milling, to sapphire after milling
Chip measures, convenient for judging whether the sapphire wafer after bevelling processing is qualified, then cleans to sapphire wafer,
Keep sapphire wafer cleaner, convenient for storage.
Calibration defective locations can specifically be passed through by the way that first sapphire wafer is fixed in the machine table of carving machine
Sapphire wafer is fixed in setting fixing tool, then by the fault detection equipment on carving machine to sapphire wafer
Defective locations are detected, and after detecting defective locations, are driven cutter head is processed to sapphire wafer by central control system
At defective locations, and bevelling processing is carried out using defective locations of the processing cutter head to sapphire sapphire wafer.
When carrying out bevelling processing, motion profile of the processing cutter head of carving machine in X/Y plane milling is arc-shaped, thus
Also it can make the outer circle of sapphire wafer can also be generally circular, it is ensured that the qualification rate of sapphire wafer.
The width of each milling is 0.005-0.02mm, it can be understood as the width of each bevelling processing is 0.005-
0.02mm, it is understood that the depth of cut for being each is 0.005-0.02mm.For example, it is desired to the indigo plant treasured for being 100mm to diameter
When stone chip carries out reparation 0.05mm, the depth of cut that can choose each is 0.01mm, duplicate can repair 5 at this time,
Also, when using present local bevelling technique processing, the diameter of the sapphire wafer measurement after processing is about 99.95mm, symbol
When closing production requirement, and carrying out bevelling processing using original method, the diameter after processing is 99.90mm, will be more than diameter
Range, keep product unqualified.
It selects the number of milling depending on the size of defect, but multiple milling is all made of to same defect, repeatedly mill
Cut the quality that can preferably guarantee bevelling.Specifically it can choose 3-10 times.
It is measured as measuring the diameter of the sapphire wafer after local bevelling, it can be by sapphire wafer along measuring scale
Scale direction is placed, and is stopped two sides using two baffles, and the graduation mark of two baffles and measuring scale is closely, is read and is surveyed
Spacing on gage between two baffles.
Sapphire wafer is clipped in the middle using two baffles, between then measuring scale being utilized to measure between two baffles
Away from can obtain the width of sapphire wafer, be the diameter of sapphire wafer.
Repeated measurement is needed when measuring diameter, is that can constantly rotate sapphire wafer in measurement, it can be to each
A position carries out diameter measurement.It finally takes shortest diameter value as measurement result, only needs shortest diameter value to meet processing straight
The requirement of diameter can think that the sapphire wafer is qualified chip.
Cleaning to sapphire wafer may include following step: 1, being carried out using clear water to the sapphire wafer after bevelling
Initial flush；2, the sapphire wafer after initial flush is cleaned using cleaning agent in rinse bath；3, again using clear
Water carries out secondary flushing to the sapphire wafer after cleaning, and the remaining cleaning agent of Sapphire wafer surface is rinsed well；4, sharp
The sapphire wafer after secondary flushing is cleaned with dehydrated alcohol；5, using hair dryer to the sapphire wafer after scouring into
Row drying.
The sapphire wafer after bevelling is rinsed first with clear water, the impurity particle that surface is adhered to is rinsed well,
Then sapphire wafer is cleaned using cleaning agent, cleans the surface of sapphire wafer more, clear water is recycled to carry out
Secondary flushing can be played the role of washing out remaining cleaning agent, avoid cleaning agent from being attached to the surface of sapphire wafer, so
It is cleaned afterwards using dehydrated alcohol, moisture is dried, finally hair dryer blowing cold air is recycled to dry up sapphire, can be incited somebody to action
Moisture adequately eliminates, and sapphire wafer is enable to be stored well.
When being cleaned in rinse bath, cleaning agent can choose alkaline cleaner, may include carbonate, silicate,
Phosphate and chelating agent, alkaline cleaner can remove the acid contaminant of Sapphire wafer surface, and silicate and phosphate can
To provide certain cleaning effect, it is clean more clean to enable sapphire wafer, and carbonate has alkalescent, can pass through
Hydrolysis constantly ionizes out hydroxide ion, can be used as the alkalinity that buffer keeps rinse bath energy cleaning solution, chelating agent
The free metal ion in solution can be reduced by chemical reaction.
With gradually cleaning of the sapphire wafer in rinse bath, the alkalinity in rinse bath can be made to die down, rinse bath is about
The replacement of cleaning solution is carried out after cleaning 500 sapphire wafers.
Although reference be made herein to invention has been described for multiple explanatory embodiments of the invention, however, it is to be understood that
Those skilled in the art can be designed that a lot of other modification and implementations, these modifications and implementations will fall in this Shen
It please be within disclosed scope and spirit.It more specifically, within the scope of the present disclosure and claims, can be to master
The building block and/or layout for inscribing composite configuration carry out a variety of variations and modifications.In addition to what is carried out to building block and/or layout
Outside modification and improvement, to those skilled in the art, other purposes also be will be apparent.
Claims (10)
1. a kind of bevelling processing method of sapphire wafer, it is characterised in that: using carving machine to the fault location of sapphire wafer
Carry out local bevelling processing.
2. a kind of bevelling processing method of sapphire wafer according to claim 1, it is characterised in that: the sapphire is brilliant
The fault location of piece is located in the outer circle of sapphire wafer.
3. a kind of bevelling processing method of sapphire wafer according to claim 1, it is characterised in that: the carving machine
The processing of local bevelling successively include: demarcate defective locations, the width that sets milling, setting milling number, carving machine XY it is flat
Face carries out milling, measurement and cleaning.
4. a kind of bevelling processing method of sapphire wafer according to claim 3, it is characterised in that: the calibration defect
Position is that first sapphire wafer is fixed in the machine table of carving machine, then by the fault detection equipment on carving machine to indigo plant
The fault location of jewel chip is detected, and is moved to lacking for sapphire wafer for cutter head is processed in the central control system by carving machine
Fall into the position at place.
5. a kind of bevelling processing method of sapphire wafer according to claim 4, it is characterised in that: the carving machine
It is arc-shaped to process motion profile of the cutter head in X/Y plane milling.
6. a kind of bevelling processing method of sapphire wafer according to claim 3, it is characterised in that: each milling
Width be 0.005-0.02mm.
7. a kind of bevelling processing method of sapphire wafer according to claim 3, it is characterised in that: the cleaning includes
Following steps:
S1, initial flush is carried out to the sapphire wafer after bevelling using clear water；
S2, using cleaning agent the sapphire wafer after initial flush is cleaned in rinse bath；
S3, using clear water secondary flushing is carried out to the sapphire wafer after cleaning again, Sapphire wafer surface is remaining clear
Lotion is rinsed well；
S4, the sapphire wafer after secondary flushing is cleaned using dehydrated alcohol；
S5, the sapphire wafer after scouring is dried up using hair dryer.
8. a kind of bevelling processing method of sapphire wafer according to claim 7, it is characterised in that: the cleaning agent is
Alkaline cleaner, including carbonate, silicate, phosphate and chelating agent.
9. a kind of bevelling processing method of sapphire wafer according to claim 3, it is characterised in that: described to be measured as
The diameter of sapphire wafer after measuring local bevelling, including the scale direction along measuring scale of sapphire wafer is placed, benefit
Two sides are stopped with two baffles, and the graduation mark of two baffles and measuring scale is closely, reads two baffles on measuring scale
Between spacing.
10. a kind of bevelling processing method of sapphire wafer according to claim 9, it is characterised in that: the measurement
As a result using the shortest diameter value of sapphire wafer after the local bevelling of measurement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910075629.5A CN109849204B (en) | 2019-01-25 | 2019-01-25 | Chamfering processing method of sapphire wafer |
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|---|---|---|---|
| CN201910075629.5A CN109849204B (en) | 2019-01-25 | 2019-01-25 | Chamfering processing method of sapphire wafer |
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| CN109849204A true CN109849204A (en) | 2019-06-07 |
| CN109849204B CN109849204B (en) | 2021-05-18 |
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187305A (en) * | 1989-01-13 | 1990-07-23 | Mitsubishi Electric Corp | Wafer dividing blade |
| JPH09167723A (en) * | 1995-12-15 | 1997-06-24 | Toshiba Corp | Wafer for semiconductor device and its production |
| CN1201998A (en) * | 1997-05-22 | 1998-12-16 | 住友电气工业株式会社 | III-V compound semiconductor wafer |
| CN1364107A (en) * | 2000-02-23 | 2002-08-14 | 信越半导体株式会社 | Method and apparatus for polishing peripheral chamfer part of wafer |
| WO2005041281A1 (en) * | 2003-10-22 | 2005-05-06 | Northrop Grumman Corporation | Hard substrate wafer sawing process |
| CN101607377A (en) * | 2009-07-07 | 2009-12-23 | 吉林华微电子股份有限公司 | The asymmetric chamfer processing method of single chip edge |
| US20110186554A1 (en) * | 2010-02-03 | 2011-08-04 | Disco Corporation | Wafer dividing method using co2 laser |
| CN103551637A (en) * | 2013-10-30 | 2014-02-05 | 中国航空工业集团公司第六三一研究所 | Method for chamfering edge by using numerical control milling machine |
| CN104259132A (en) * | 2014-07-29 | 2015-01-07 | 蓝思科技股份有限公司 | Technology for cleaning sapphire wafer |
| CN104440496A (en) * | 2014-11-07 | 2015-03-25 | 江苏吉星新材料有限公司 | Novel cleaning technology of sapphire wafers |
| CN105645785A (en) * | 2016-03-04 | 2016-06-08 | 四川旭虹光电科技有限公司 | Method for reinforcing high-strength protective glass |
| CN105751393A (en) * | 2016-03-21 | 2016-07-13 | 哈尔滨秋冠光电科技有限公司 | Machining machine of sapphire wafer with high edge quality |
| CN106313345A (en) * | 2016-09-23 | 2017-01-11 | 江苏吉星新材料有限公司 | Processing method for 7.2-inch nanoscale sapphire scanner diaphragm |
| CN106425697A (en) * | 2015-08-10 | 2017-02-22 | 蓝思科技（长沙）有限公司 | Production method for 3D (three-dimensional) sapphire panel and sapphire panel |
-
2019
- 2019-01-25 CN CN201910075629.5A patent/CN109849204B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02187305A (en) * | 1989-01-13 | 1990-07-23 | Mitsubishi Electric Corp | Wafer dividing blade |
| JPH09167723A (en) * | 1995-12-15 | 1997-06-24 | Toshiba Corp | Wafer for semiconductor device and its production |
| CN1201998A (en) * | 1997-05-22 | 1998-12-16 | 住友电气工业株式会社 | III-V compound semiconductor wafer |
| CN1364107A (en) * | 2000-02-23 | 2002-08-14 | 信越半导体株式会社 | Method and apparatus for polishing peripheral chamfer part of wafer |
| WO2005041281A1 (en) * | 2003-10-22 | 2005-05-06 | Northrop Grumman Corporation | Hard substrate wafer sawing process |
| CN101607377A (en) * | 2009-07-07 | 2009-12-23 | 吉林华微电子股份有限公司 | The asymmetric chamfer processing method of single chip edge |
| US20110186554A1 (en) * | 2010-02-03 | 2011-08-04 | Disco Corporation | Wafer dividing method using co2 laser |
| CN103551637A (en) * | 2013-10-30 | 2014-02-05 | 中国航空工业集团公司第六三一研究所 | Method for chamfering edge by using numerical control milling machine |
| CN104259132A (en) * | 2014-07-29 | 2015-01-07 | 蓝思科技股份有限公司 | Technology for cleaning sapphire wafer |
| CN104440496A (en) * | 2014-11-07 | 2015-03-25 | 江苏吉星新材料有限公司 | Novel cleaning technology of sapphire wafers |
| CN106425697A (en) * | 2015-08-10 | 2017-02-22 | 蓝思科技（长沙）有限公司 | Production method for 3D (three-dimensional) sapphire panel and sapphire panel |
| CN105645785A (en) * | 2016-03-04 | 2016-06-08 | 四川旭虹光电科技有限公司 | Method for reinforcing high-strength protective glass |
| CN105751393A (en) * | 2016-03-21 | 2016-07-13 | 哈尔滨秋冠光电科技有限公司 | Machining machine of sapphire wafer with high edge quality |
| CN106313345A (en) * | 2016-09-23 | 2017-01-11 | 江苏吉星新材料有限公司 | Processing method for 7.2-inch nanoscale sapphire scanner diaphragm |
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| CN109849204B (en) | 2021-05-18 |
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