JPH02151086A - light emitting diode - Google Patents
light emitting diodeInfo
- Publication number
- JPH02151086A JPH02151086A JP63304903A JP30490388A JPH02151086A JP H02151086 A JPH02151086 A JP H02151086A JP 63304903 A JP63304903 A JP 63304903A JP 30490388 A JP30490388 A JP 30490388A JP H02151086 A JPH02151086 A JP H02151086A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- view
- substrate container
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、側面より光が放射される表面実装用の発光
ダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a surface-mounted light emitting diode that emits light from the side.
従来の技術
従来の表面実装用発光ダイオードの構造を第６図、第７
図および第８図に示す。Conventional technology The structure of a conventional surface-mount light emitting diode is shown in Figures 6 and 7.
As shown in FIG.
第６図（ａ）は平面図、第６図（ｂ）は側面図である。FIG. 6(a) is a plan view, and FIG. 6(b) is a side view.
この構造は、リードフレーム１と１′にインサート成形
により耐熱性樹脂の反射ケース２が形成され、反射ケー
ス２の底部にあるリードフレーム１の上に発光ダイオー
ドチップ３が銀ペースト４により固定され、発光ダイオ
ードチップ３の電極と反射ケース２の底部にあるリード
フレーム１゛とは金線５により接続され、反射ケース２
の内部が発光ダイオード３の保護や光の取り出し効率向
上のため透明エポキシ樹脂６で封止されたものである。In this structure, a heat-resistant resin reflective case 2 is formed on lead frames 1 and 1' by insert molding, and a light emitting diode chip 3 is fixed on top of the lead frame 1 at the bottom of the reflective case 2 with silver paste 4. The electrodes of the light emitting diode chip 3 and the lead frame 1 at the bottom of the reflective case 2 are connected by a gold wire 5.
The inside of the light emitting diode 3 is sealed with a transparent epoxy resin 6 to protect the light emitting diode 3 and improve light extraction efficiency.
リードフレーム１′からリードフレームｌへ数十ｍＡの
電流を流すことにより発光ダイオードチップ３が発光し
、上方へ光が放射される。By passing a current of several tens of mA from lead frame 1' to lead frame l, light emitting diode chip 3 emits light, and light is emitted upward.
第７図（ａ）は平面図、第７図（ｂ）は側面図、第７図
（Ｃ）は底面図である。この構造は、プリント基板７も
しくはセラミックス基板７にめっきにより電極配線８と
８゛が形成され、電極配線８の上に発光ダイオードチッ
プ３が銀ペースト４により固定され、゛発光ダイオード
チップ３の電極と電極配線８゜とは金線５により接続さ
れ、透明エポキシ樹脂６でトランスファー成形されたも
のである。FIG. 7(a) is a plan view, FIG. 7(b) is a side view, and FIG. 7(C) is a bottom view. In this structure, electrode wirings 8 and 8' are formed on a printed circuit board 7 or a ceramic substrate 7 by plating, and a light emitting diode chip 3 is fixed on the electrode wiring 8 with silver paste 4. The electrode wiring 8° is connected with a gold wire 5 and is transfer molded with a transparent epoxy resin 6.
第８図（ａ）は平面図、第８図（ｂ）は正面図、第８図
（Ｃ）は側面図である。この構造は、リードフレーム１
のグイパッドの上に発光ダイオードチップ３が銀ペース
トで固定され、発光ダイオードチップ３の上の電極とリ
ードフレームｌ゛とは金線５により接続され、透明エポ
キシ樹脂６でトランスファー成形されたものである。FIG. 8(a) is a plan view, FIG. 8(b) is a front view, and FIG. 8(C) is a side view. This structure consists of lead frame 1
A light emitting diode chip 3 is fixed on the guide pad with silver paste, and the electrode on the light emitting diode chip 3 and the lead frame l' are connected with a gold wire 5, and transfer molded with a transparent epoxy resin 6. .
発明が解決しようとする課題
従来の発光ダイオードは全て光が上方へ放射されるトッ
プビュータイプのものであり、光が側面から放射される
サイドピユータイブのものが開発されていない。Problems to be Solved by the Invention All conventional light emitting diodes are of the top-view type in which light is emitted upward, and no side-view type in which light is emitted from the sides has been developed.
すなわち、第６図と第８図の構造では、リードフレーム
タイプであるためサイドビュータイプの表面実装用発光
ダイオードの作成は困難である。That is, since the structures shown in FIGS. 6 and 8 are lead frame types, it is difficult to fabricate a side view type surface mount light emitting diode.
また、第７図の構造では、プリント配線基板を用いた場
合、サイドビュータイプの作成は不可能であり、セラミ
ックス配線基板を用いた場合、費用が高くなるという欠
点がある。Further, the structure shown in FIG. 7 has the drawback that it is impossible to create a side view type when a printed wiring board is used, and the cost is high when a ceramic wiring board is used.
本発明は、費用が安いサイドピユータイブの発光ダイオ
ードを提供することを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a side-private light emitting diode that is inexpensive.
課題を解決するための手段
本発明の発光ダイオードは、側面に開口がある凹部を設
けた金属めっきが可能な耐熱性樹脂で成形した基板容器
にアノードとカソードの両電極の金属配線が前記凹部の
底部より前記基板容器の裏面まで連続して形成され、前
記凹部の底部に発光ダイオードチップが配置され、光が
前記基板容器の側面より放射されるものである。Means for Solving the Problems The light emitting diode of the present invention has a substrate container molded from a heat-resistant resin that can be plated with metal and has a recess with an opening on the side surface, and metal wiring for both anode and cathode electrodes is provided in the recess. The recess is formed continuously from the bottom to the back surface of the substrate container, a light emitting diode chip is disposed at the bottom of the recess, and light is emitted from the side surface of the substrate container.
作用
本発明の発光ダイオードによれば、耐熱性のプラスチッ
ク基板容器にめっきにより立体的に金属配線を形成して
サイドピユータイブの発光ダイオードを形成することが
できる。Function: According to the light emitting diode of the present invention, a side pew-type light emitting diode can be formed by three-dimensionally forming metal wiring on a heat-resistant plastic substrate container by plating.
実施例
本発明の発光ダイオードの実施例を第１図の第三角法で
示した図と第２図に示した斜視図とを参照して説明する
。なお第１図の（ａ）は平面図、（ｂ）は正面図、（Ｃ
）は下面図（ｄ）は側面図である。Embodiment An embodiment of the light emitting diode of the present invention will be described with reference to the trigonometric view shown in FIG. 1 and the perspective view shown in FIG. In addition, (a) of FIG. 1 is a plan view, (b) is a front view, and (C
) is a bottom view, and (d) is a side view.
この構造は、金属めっきが可能な熱可塑性樹脂により側
面に開口がある凹部が形成された基板容器９に、斜線が
施された領域に銅（Ｃｕ）とニッケル（Ｎｉ）および銀
（Ａｇ）が順次めっきされるか、またはＮｉとＡｇが順
次めっきされてアノードとカソードの金属配線１０と１
０′が形成されている。そして四部の底部の左側の金属
配線１０’の上に発光ダイオードチップ３が銀ペースト
４により固定され、発光ダイオードチップ３の表面の電
極と図の絶縁領域１１より右側の金属配線１０とは金線
６で接続されている。さらに、凹部は、発光ダイオード
チップ３の保護と光の取り出し効率向上のために透明エ
ポキシ樹脂６で封止されている。In this structure, copper (Cu), nickel (Ni), and silver (Ag) are placed in the shaded area on a substrate container 9 in which a recess with an opening on the side is formed using a thermoplastic resin that can be plated with metal. The anode and cathode metal wirings 10 and 1 are plated sequentially or Ni and Ag are plated sequentially.
0' is formed. The light emitting diode chip 3 is fixed on the metal wiring 10' on the left side of the bottom of the fourth part with silver paste 4, and the electrode on the surface of the light emitting diode chip 3 and the metal wiring 10 on the right side of the insulating area 11 in the figure are connected by gold wire. Connected by 6. Further, the recessed portion is sealed with a transparent epoxy resin 6 to protect the light emitting diode chip 3 and improve light extraction efficiency.
なお、基板容器９の凹部は光の反射ケースとしての機能
も有するとともに、凹部での金属配線は基板容器９の表
面にめっきされた金属層によりスルーホール１２を通っ
て基板容器９の裏面へ導かれ、裏面で電極端子１３と１
３°を構成している。Note that the recessed portion of the substrate container 9 also functions as a light reflecting case, and the metal wiring in the recessed portion is guided to the back surface of the substrate container 9 through the through hole 12 by a metal layer plated on the surface of the substrate container 9. Then, connect electrode terminals 13 and 1 on the back side.
It constitutes 3°.
第２図には本発明の発光ダイオードをプリント基板１４
に実装した状態を示す。なお、１５ははんだ、１６はプ
リント基板１４に形成された導電配線層である。この状
態で、電極端子１３から電極端子１３′へ数十ｍＡの電
流を流すことにより発光ダイオードチップ３が発光し、
光は凹部を反射板としてプリント基板１４の面に対して
平行に、すなわち基板容器９の側面より放射される。FIG. 2 shows the light emitting diode of the present invention on a printed circuit board 14.
The following figure shows the state in which it is implemented. Note that 15 is solder and 16 is a conductive wiring layer formed on the printed circuit board 14. In this state, by passing a current of several tens of mA from the electrode terminal 13 to the electrode terminal 13', the light emitting diode chip 3 emits light.
The light is emitted parallel to the surface of the printed circuit board 14, that is, from the side surface of the substrate container 9, using the recess as a reflection plate.
次に、本発明の発光ダイオードの製造方法について第３
図〜第５図に示した工程図面を参照して説明する。なお
、第３図〜題５図において、（ａ）は上面図、（ｂ）は
正面図、（Ｃ）は下面図、（ｄ）はＡ−Ａ ’線に沿っ
た側断面図である。Next, a third section regarding the method for manufacturing a light emitting diode of the present invention will be described.
This will be explained with reference to the process drawings shown in FIGS. In FIGS. 3 to 5, (a) is a top view, (b) is a front view, (C) is a bottom view, and (d) is a side sectional view taken along the line AA'.
まず、第３図に示すようにめっきが可能な熱可塑性樹脂
により貫通孔１７と凹部１８とを設けた基板容器１９を
射出成形により形成する。表面実装時のりフロー等の加
熱に耐えるめっきが可能な熱可塑性樹脂としては、ポリ
エーテルサルフォン、ポリエーテルイミド、ポリフェニ
レンサルファイド、液晶ポリマー等が利用できる。First, as shown in FIG. 3, a substrate container 19 provided with through holes 17 and recesses 18 is formed by injection molding from a thermoplastic resin that can be plated. Polyether sulfone, polyetherimide, polyphenylene sulfide, liquid crystal polymer, and the like can be used as thermoplastic resins that can be plated to withstand heating during surface mounting and the like.
次に、基板容器１９にめっきを施して立体配線を形成す
る。この方法は、まず第４図（ａ）の面はめっきを施さ
ない部分（ただし凹部を除く）にスクリーン印刷により
レジストを塗布する。また第４図（ｂ）の面のめっきを
施さない部分にレジストのスタンピングもしくはテーピ
ングによりマスキングを行う。この後、めっき膜が付着
しやすいように表面を荒らすためエツチングを行い、続
いて、Ｐｄの触媒を付与し、無電解鋼めっきを行う。こ
の後、レジストやテープを除去し、凹部の絶縁領域１１
をＹＡＧレーザー照射により凹部のめっき膜を除去し、
銅、ニッケル、銀を順次電気めっきを行うことにより第
４図の斜線を施した領域にめっき膜による金属配線を形
成する。Next, the substrate container 19 is plated to form three-dimensional wiring. In this method, first, on the surface shown in FIG. 4(a), a resist is applied to the unplated portions (excluding the recessed portions) by screen printing. Further, the portions of the surface shown in FIG. 4(b) that are not to be plated are masked by resist stamping or taping. After this, etching is performed to roughen the surface so that the plating film can easily adhere to it, and then a Pd catalyst is applied and electroless steel plating is performed. After that, the resist and tape are removed, and the insulating area 11 of the recess is removed.
The plating film in the recesses is removed by YAG laser irradiation,
By sequentially electroplating copper, nickel, and silver, a metal interconnection using a plating film is formed in the shaded area in FIG. 4.
次に、凹部１８の底部の金属配線２０の上に発光ダイオ
ードチップ３を銀ペースト４により固定したあと、金線
５により金属配線２１と発光ダイオードチップ３の電極
とを接続する。次に、第５図に示すように凹部１８に透
明エポキシ樹脂６で封止し、−点差線で示した線に沿っ
てダイヤモンドダイシングブレードで切断し、複数個の
個々の発光ダイオードに分割する。Next, the light emitting diode chip 3 is fixed onto the metal wiring 20 at the bottom of the recess 18 with silver paste 4, and then the metal wiring 21 and the electrode of the light emitting diode chip 3 are connected with the gold wire 5. Next, as shown in FIG. 5, the recess 18 is sealed with a transparent epoxy resin 6, and cut along the dashed line with a diamond dicing blade to divide it into a plurality of individual light emitting diodes.
本実施例においては、１個の樹脂基板容器から多数のサ
イドピユータイブの発光ダイオードを作成することがで
きる。In this embodiment, a large number of side pew type light emitting diodes can be produced from one resin substrate container.
発明の効果
本発明の発光ダイオードによれば、被めっき性を有する
熱可塑性樹脂を用いて側面に開口のある凹部を設けた基
板容器にめっきにより立体配線を施したモールド型プリ
ント配線基板容器の凹部の底部に発光ダイオードを配置
しているため、発光ダイオードは側面より光を放射する
ことができる。また、樹脂成形基板容器を用いているた
めに、全型代や材料費が安く、さらに、四部により反射
ケースも構成されているために光を有効に取り出すこと
ができる。Effects of the Invention According to the light emitting diode of the present invention, the recess of a molded printed wiring board container is formed by plating three-dimensional wiring on a board container in which a recess with an opening on the side surface is formed using a thermoplastic resin having a plating property. Since the light emitting diode is placed at the bottom of the screen, the light emitting diode can emit light from the side. Further, since a resin-molded substrate container is used, the total mold cost and material cost are low, and since the reflective case is also constituted by four parts, light can be extracted effectively.
第１図は本発明の発光ダイオードの実施例を示す第三角
法で示した図、第２図は本発明の発光ダイオードをプリ
ント配線基板に実装した斜視図。
第３図〜第５図は本発明の発光ダイオードの製造方法を
第三角法で示した工程図、第６図〜第８図は従来の発光
ダイオードを示す図である。
３・・・・・・発光ダイオードチップ、４・旧・・銀ペ
ースト、５・・・・・・金線、６・・・・・・透明エポ
キシ樹脂、９・・・、・・基板容器、１０，１０：・・
・・・・金属配線、１１・・・・・・絶縁領域、１２・
旧・・スルホール、１３．１３゜・・・・・・電極端子
、１４・・・・・・プリント基板、１５・旧・・はんだ
、１６・・・・・・導電配線層、１７・・・・・・貫通
孔、１８・・・・・・凹部、１９・・・・・・基板容器
、２０．２１・・・・・・凹部の金属配線。
代理人の氏名 弁理士 粟野重孝 はが１名第１図
牛 −ｍ−
６−・−
発光タイオードチヅフ
藷欠−スト
金 精
幻竪６月工ηで千シ１８％
１４−・−プリント基層１
１５−・−１１んだ
＋Ａ −一 鼻 ｔ ｉ己 縛 ｉ怖
Ｅ
第
図
！FIG. 1 is a triangular diagram showing an embodiment of the light emitting diode of the present invention, and FIG. 2 is a perspective view of the light emitting diode of the present invention mounted on a printed wiring board. 3 to 5 are process diagrams showing the method for manufacturing a light emitting diode of the present invention using the trigonometric method, and FIGS. 6 to 8 are diagrams showing a conventional light emitting diode. 3... Light emitting diode chip, 4... Old silver paste, 5... Gold wire, 6... Transparent epoxy resin, 9... Substrate container, 10,10:...
...Metal wiring, 11...Insulation area, 12.
Old... through hole, 13.13°... electrode terminal, 14... printed circuit board, 15... old... solder, 16... conductive wiring layer, 17... ... through hole, 18 ... recess, 19 ... substrate container, 20.21 ... metal wiring in recess. Name of agent Patent attorney Shigetaka Awano 1 person Figure 1 -m- 6-・- Light-emitting diode chip lack of space - strike money Seigen vertical June work η 1,000 shi 18% 14---Print base layer 1 15 -・-11+A -1 nose t i self binding i fear E Figure!
Claims (1)
基板容器にアノードとカソードの両電極の金属配線が前
記凹部の底部より前記基板容器の裏面まで連続して形成
され、前記凹部の底部に発光ダイオードチップが配置さ
れ、光が前記基板容器の側面より放射されることを特徴
とする発光ダイオード。Metal wiring for both anode and cathode electrodes is formed continuously from the bottom of the recess to the back surface of the substrate container in a substrate container molded from a heat-resistant resin having a recess with an opening on the side surface, and A light emitting diode, wherein a light emitting diode chip is disposed on the substrate container, and light is emitted from a side surface of the substrate container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304903A JPH02151086A (en) | 1988-12-01 | 1988-12-01 | light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304903A JPH02151086A (en) | 1988-12-01 | 1988-12-01 | light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02151086A true JPH02151086A (en) | 1990-06-11 |
| JPH0472393B2 JPH0472393B2 (en) | 1992-11-18 |
Family
ID=17938678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63304903A Granted JPH02151086A (en) | 1988-12-01 | 1988-12-01 | light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151086A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0465465U (en) * | 1990-10-18 | 1992-06-08 | ||
| JPH10294493A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting device |
| WO2001069693A1 (en) * | 2000-03-17 | 2001-09-20 | Matsushita Electric Industrial Co., Ltd. | Light-emitting semiconductor device and surface-emitting device |
| JP2002261332A (en) * | 2001-03-02 | 2002-09-13 | Citizen Electronics Co Ltd | Light-emitting diode |
| JP2003179271A (en) * | 2000-03-17 | 2003-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device, manufacturing method thereof, and surface light emitting device |
| KR100454777B1 (en) * | 2000-09-13 | 2004-11-05 | 가부시키가이샤 시티즌 덴시 | Chip type light emitting diode and method of manufacture thereof |
-
1988
- 1988-12-01 JP JP63304903A patent/JPH02151086A/en active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0465465U (en) * | 1990-10-18 | 1992-06-08 | ||
| JPH10294493A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting device |
| WO2001069693A1 (en) * | 2000-03-17 | 2001-09-20 | Matsushita Electric Industrial Co., Ltd. | Light-emitting semiconductor device and surface-emitting device |
| JP2003179271A (en) * | 2000-03-17 | 2003-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device, manufacturing method thereof, and surface light emitting device |
| US6597018B2 (en) | 2000-03-17 | 2003-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitter and flat panel display lighting system |
| KR100708511B1 (en) * | 2000-03-17 | 2007-04-16 | 마츠시타 덴끼 산교 가부시키가이샤 | Semiconductor light emitting device and surface light emitting device |
| KR100454777B1 (en) * | 2000-09-13 | 2004-11-05 | 가부시키가이샤 시티즌 덴시 | Chip type light emitting diode and method of manufacture thereof |
| EP1189291A3 (en) * | 2000-09-13 | 2006-03-22 | Citizen Electronics Co., Ltd. | Chip type light emitting diode and method of manufacture thereof |
| JP2002261332A (en) * | 2001-03-02 | 2002-09-13 | Citizen Electronics Co Ltd | Light-emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0472393B2 (en) | 1992-11-18 |
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