JPH02134811A - Pattern exposure device - Google Patents
Pattern exposure deviceInfo
- Publication number
- JPH02134811A JPH02134811A JP63289475A JP28947588A JPH02134811A JP H02134811 A JPH02134811 A JP H02134811A JP 63289475 A JP63289475 A JP 63289475A JP 28947588 A JP28947588 A JP 28947588A JP H02134811 A JPH02134811 A JP H02134811A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- sample
- vacuum chamber
- stage
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程でＩＣパターンの描画に
用られるパターン露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pattern exposure apparatus used for drawing IC patterns in the manufacturing process of semiconductor devices.
従来、この種のパターン露光装置におけるマスク基板等
の試料や試料ホルダーの温度測定には、銅・コンスタン
タン、白金・白金ロジュウム等の熱電対が検出器として
使われていた。Conventionally, thermocouples made of copper/constantan, platinum/platinum rhodium, or the like have been used as detectors to measure the temperature of samples such as mask substrates and sample holders in this type of pattern exposure apparatus.
すなわち第２図に示すように、露光装置内に挿入された
試料２１および試料ホルダー２２はガイド２３によりス
テージ２４に載置される。そして、ステージ内に埋め込
まれな熱電対２５により試料２１や試料ホルダー２２の
温度が測定されていた。That is, as shown in FIG. 2, a sample 21 and a sample holder 22 inserted into the exposure apparatus are placed on a stage 24 by a guide 23. As shown in FIG. The temperature of the sample 21 and the sample holder 22 was measured by a thermocouple 25 embedded in the stage.
上述した従来のパターン露光装置においては、試料温度
測定は、試料のステージへの載置位置精度の向上のため
、熱電対は試料および試料ホルダーと直接触れないよう
に構成されていた。In the above-mentioned conventional pattern exposure apparatus, the thermocouple is configured so as not to come into direct contact with the sample and the sample holder in order to improve the precision of the placement position of the sample on the stage when measuring the sample temperature.
荷電ビームに依るパターン描画は高真空中で行なう必要
があるため、試料の出し入れ時には、真空引きに伴なう
断熱膨張があり温度制御を行なっていても試料および試
料ホルダーの温度が０．６〜１．０℃程度変化する。こ
の温度変化が試料或いは試料ホルダーの伸び縮みを起こ
し、パターン描画精度低下の要因となっている。Pattern drawing using a charged beam must be performed in a high vacuum, so when loading and unloading the sample, there is adiabatic expansion due to evacuation, and even if temperature control is performed, the temperature of the sample and sample holder may exceed 0.6 It changes by about 1.0℃. This temperature change causes expansion and contraction of the sample or sample holder, causing a decrease in pattern drawing accuracy.
パターン露光装置の試料温度測定は、上述の温度変化を
最小に制御するために必要であるが、従来の温度測定用
熱電対はステージ側壁内に埋め込まれているため、瞬時
にして試料等の正確な温度を測定する事は不可能であっ
た。このなめ、新しいパターン露光装置のステージおよ
びその周辺の温度設定条件を決めるのに、極めて長時間
を要するという欠点がある。Sample temperature measurement in pattern exposure equipment is necessary to minimize the temperature changes mentioned above, but since conventional temperature measurement thermocouples are embedded in the side wall of the stage, they can instantly and accurately measure the sample temperature. It was impossible to measure the exact temperature. This has the disadvantage that it takes an extremely long time to determine the temperature setting conditions for the stage and its surroundings of a new pattern exposure apparatus.
本発明のパターン露光装置は、試料の温度を測定するた
めに赤外線センサを真空室内に設けたものである。The pattern exposure apparatus of the present invention includes an infrared sensor provided in a vacuum chamber to measure the temperature of a sample.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の電子ビームによるパターン
露光装置の断面図である。FIG. 1 is a sectional view of a pattern exposure apparatus using an electron beam according to an embodiment of the present invention.
第１図において、電子銃］より発せられた電子ビーム２
は偏向制御を受けて、試料であるフォトマスク基板３上
にＩＣパターンを描画する。フォトマスク基板３は、真
空室４内の稼働ステージ５上に載置され、所望の位置に
移動可能となっている。フォトマスク基板３は、試料交
換室（図示せず）内での真空引きのため断熱膨張を受け
た後に、真空室４に挿入され可動ステージ５上に保持さ
れる。温度測定用の赤外線センサ６は真空室４内の上部
に設けられており、この下部に可動ステージ５によりフ
ォトマスク基板３が移動する。そして赤外線センサ６に
よりフォトマスク基板３とその周辺部の温度測定が行な
われる。測定結果はデイスプレィ７に表示され温度分布
の確認が可能となっている。尚８はフォトマスク基板３
の温度調節を行うための温度調節器である。In Figure 1, an electron beam 2 emitted from an electron gun
Under deflection control, an IC pattern is drawn on the photomask substrate 3, which is a sample. The photomask substrate 3 is placed on a movable stage 5 within a vacuum chamber 4 and is movable to a desired position. After the photomask substrate 3 undergoes adiabatic expansion due to evacuation in a sample exchange chamber (not shown), it is inserted into the vacuum chamber 4 and held on the movable stage 5 . An infrared sensor 6 for temperature measurement is provided in the upper part of the vacuum chamber 4, and the photomask substrate 3 is moved to the lower part thereof by a movable stage 5. Then, the infrared sensor 6 measures the temperature of the photomask substrate 3 and its surrounding area. The measurement results are displayed on the display 7, making it possible to check the temperature distribution. 8 is the photomask substrate 3
This is a temperature controller for controlling the temperature of
本実施例における赤外線センサとして、ＨｇＣｄ Ｔ
ｅからなるエリアアレイセンサを用いると、室温範囲の
温度測定で０，０５〜０．１°Ｃの分解能を持つため、
大きな表面積を有する試料の温度を非接触で精度よく測
定できる。このためＩＣパターン描画に必要とされる精
度を得るためのステージ及びその周辺の温度条件、すな
わち温度調節器８の設定条件を短時間に且つ精度良くき
める事ができる。すなわち、従来１週間程度を要してい
たステージおよびその周辺の温度設定を、１日程度の短
時間でかつ精度良く行うことができる。上記実施例にお
いては赤外線センサとしてエリアアレイセンサを用いた
が、安価なりニアアレイセンサを用いることも可能であ
る。この場合でもＨｇ Ｃｄ Ｔ ｅの時定数は数百ｎ
ｓであるので、リニアアレイセンサに直角の方向にステ
ージを移動することにより、２〜３秒で所望の温度分布
を測定する事ができる。As the infrared sensor in this example, HgCdT
When using an area array sensor consisting of e, it has a resolution of 0.05 to 0.1°C for temperature measurement in the room temperature range, so
The temperature of a sample with a large surface area can be measured accurately without contact. Therefore, the temperature conditions of the stage and its surroundings, that is, the setting conditions of the temperature controller 8, can be determined in a short time and with high precision in order to obtain the precision required for IC pattern drawing. That is, the temperature setting of the stage and its surroundings, which conventionally required about one week, can be done in a short time of about one day and with high precision. In the above embodiment, an area array sensor is used as the infrared sensor, but a near array sensor can also be used since it is cheaper. Even in this case, the time constant of Hg Cd T e is several hundred nanometers.
s, the desired temperature distribution can be measured in 2 to 3 seconds by moving the stage in a direction perpendicular to the linear array sensor.
以上説明したように本発明は、パターン露光装置におけ
る試料の温度測定を真空室内に設けた赤外線センサによ
り行うことにより、ステージおよびその周辺の温度設定
を短時間で且つ精度良く行なうことができるという効果
がある。As explained above, the present invention has the advantage that the temperature of the stage and its surroundings can be set in a short time and with high precision by measuring the temperature of the sample in the pattern exposure apparatus using an infrared sensor installed in the vacuum chamber. There is.
−ン露光装置の温度測定機構を説明するためのステージ
近傍の斜視図である。FIG. 2 is a perspective view of the vicinity of a stage for explaining a temperature measurement mechanism of the exposure apparatus.
１・・・電子銃、２・・・電子ビーム、３・・・フォト
マスク基板、４・・・真空室、５・・・可動ステージ、
６・・・赤外線センサ、７・・・デイスプレィ、８・・
・温度調節器、２１・・・試料、２２・・・試料ホルダ
、２３・・・カイト、２４・・・ステージ、２５・・・
熱電対、２６・・・ステージ側壁。DESCRIPTION OF SYMBOLS 1... Electron gun, 2... Electron beam, 3... Photomask substrate, 4... Vacuum chamber, 5... Movable stage,
6...Infrared sensor, 7...Display, 8...
-Temperature controller, 21...sample, 22...sample holder, 23...kite, 24...stage, 25...
Thermocouple, 26...Stage side wall.
Claims (1)
なる荷電ビームを照射してパターンを描画するパターン
露光装置において、前記試料の温度を測定するための赤
外線センサを前記真空室内に設けたことを特徴とするパ
ターン露光装置。A pattern exposure apparatus that draws a pattern by irradiating a charged beam of ions or electrons onto a sample held in a vacuum chamber, characterized in that an infrared sensor for measuring the temperature of the sample is provided in the vacuum chamber. Pattern exposure equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63289475A JPH02134811A (en) | 1988-11-15 | 1988-11-15 | Pattern exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63289475A JPH02134811A (en) | 1988-11-15 | 1988-11-15 | Pattern exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02134811A true JPH02134811A (en) | 1990-05-23 |
Family
ID=17743756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63289475A Pending JPH02134811A (en) | 1988-11-15 | 1988-11-15 | Pattern exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02134811A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0496314A (en) * | 1990-08-14 | 1992-03-27 | Toshiba Corp | Method of forming or testing pattern for semiconductor device |
| JP2006128206A (en) * | 2004-10-26 | 2006-05-18 | Nikon Corp | Exposure method and exposure apparatus |
-
1988
- 1988-11-15 JP JP63289475A patent/JPH02134811A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0496314A (en) * | 1990-08-14 | 1992-03-27 | Toshiba Corp | Method of forming or testing pattern for semiconductor device |
| JP2006128206A (en) * | 2004-10-26 | 2006-05-18 | Nikon Corp | Exposure method and exposure apparatus |
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