JPH01270250A - Integrated circuit device and its manufacture - Google Patents
Integrated circuit device and its manufactureInfo
- Publication number
- JPH01270250A JPH01270250A JP63098660A JP9866088A JPH01270250A JP H01270250 A JPH01270250 A JP H01270250A JP 63098660 A JP63098660 A JP 63098660A JP 9866088 A JP9866088 A JP 9866088A JP H01270250 A JPH01270250 A JP H01270250A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- integrated circuit
- pads
- plural
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Credit Cards Or The Like (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は例えばICカード等に用いられる集積回路装置
(以下ICモジュールと称す)に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an integrated circuit device (hereinafter referred to as an IC module) used, for example, in an IC card or the like.
従来の技術
個人を識別するカードとして、従来は磁気あるいは光学
的読み取りによる識別方式を用いていたが恒久性に欠け
たり、変更が容易であったりして識別の安全性の低いも
のであるという問題があった。このため、最近では集積
回路(以下ICと称す)を装着、若しくは内蔵したIC
カードを識別カードとして利用するシステムについて実
用化の検討が行われている。Conventional technology Conventionally, identification methods using magnetic or optical reading have been used to identify individuals, but these cards lack permanence and are easy to change, resulting in low identification security. was there. For this reason, recently, ICs equipped with integrated circuits (hereinafter referred to as ICs) or built-in
Studies are underway to put a system that uses cards as identification cards into practical use.
このようなICカードは従来の磁気ストライプカードに
比べ、その記憶容量が大きく、内蔵するIC化されたマ
イクロコンピュータ−により、識別の安全性が高いこと
から、銀行関係では預金通帳に代る預貯金の履歴を、そ
してクレジット関係では買物などの取引履歴、医療関係
では個人の健康データの記憶などの応用システムが考え
られている。These IC cards have a larger storage capacity than conventional magnetic stripe cards, and have a built-in IC microcomputer that makes identification more secure. Application systems are being considered for storing transaction history, such as shopping history in the credit-related field, and personal health data in the medical field.
ICカードにも多くの種類があるが、D′も薄いもので
760μmの厚みのICカードがl5O(国際標準化機
構)で規格化が検討されている。Although there are many types of IC cards, D' is also a thin type, and the standardization of an IC card with a thickness of 760 μm is being considered by the International Organization for Standardization (I5O).
以下、従来のICカード及びこのカードに用いられるI
Cモジュールについて添付図面を参照しながら説明する
。Below, the conventional IC card and the IC used in this card will be explained.
The C module will be explained with reference to the attached drawings.
第5図はICカードの斜視図、第5図は第5図における
ムーA′断面であり、ICモジュールの周辺を示す断面
図、第7図は回路基板の断面図、第8図は第7図の回路
基板を用いたICモジュールの断面図である。FIG. 5 is a perspective view of the IC card, FIG. 5 is a cross-section of MuA' in FIG. 5, showing the vicinity of the IC module, FIG. 7 is a cross-sectional view of the circuit board, and FIG. FIG. 2 is a cross-sectional view of an IC module using the circuit board shown in the figure.
従来、この種のICカードは第5図、第5図に示すよう
に、積74あるいはシート状の760μm厚のプラスチ
ックカード1に、エンドミルやトムソン金型などを用い
て、ICモジュール300大きさで穴2を設け、上記プ
ラスチックカード1よりやや薄い厚みの上記ICモジュ
ール30′fr:挿入し、外部接続用の電極3が露出す
るように接着する0
上記ICモジュール30としては、通常、第7図に示す
ような回路基板20i用いる。まず、厚さ300μm程
度のガラスエポキシあるいはポリイミドからなる基板4
の両面に、16〜36μm厚の銅箔をラミネートし、所
望のパターンを得るためにエツチングした後、表裏面の
パターンを接続するためにスルホール6を行った後、ニ
ッケル及び金のメツキを行い外部の電極3と回路パター
ン6を形成する。さらにICモジュールとしての極薄実
装するためにエンドミルなどを使用して上記基板4に座
ぐりを行い凹部7を形成し、その後ICsを保護するた
めの絶縁性保護材(以下封止樹脂と称す)11がスルホ
ール6から流出することを防ぐための封止枠8を回路パ
ターン6上に接着剤などを用いて取り付ける。以上の方
法により得られた回路基板20(i−用いて、次に、I
Ceを実装する所を説明するために第8図を用いる。凹
部7にIC9ft、ダイボンドし、金、アルミ、鋼材な
どの材質のワイヤーボンディング10により、回路パタ
ーン6とIC9の入出力パッド(図示せず)とをできる
だけ低いワイヤーのループ高さで接続後、上記ze9t
エポキシ樹脂などの封止樹脂11で被覆していた。Conventionally, this type of IC card has been manufactured by using an end mill or Thomson mold to form an IC module 300 in size on a 760 μm thick plastic card 1 in the form of a stack or sheet, as shown in FIGS. The IC module 30'fr, which has a hole 2 and is slightly thinner than the plastic card 1, is inserted and glued so that the electrode 3 for external connection is exposed. A circuit board 20i as shown in FIG. First, a substrate 4 made of glass epoxy or polyimide with a thickness of about 300 μm is prepared.
Copper foil with a thickness of 16 to 36 μm is laminated on both sides, etched to obtain the desired pattern, through holes 6 are made to connect the patterns on the front and back sides, and then nickel and gold are plated to form the exterior. electrodes 3 and circuit patterns 6 are formed. Furthermore, in order to extremely thinly mount the IC module, the substrate 4 is counterbored using an end mill to form a recess 7, and then an insulating protective material (hereinafter referred to as sealing resin) is used to protect the ICs. A sealing frame 8 for preventing leakage of the circuit pattern 11 from the through hole 6 is attached onto the circuit pattern 6 using an adhesive or the like. The circuit board 20 obtained by the above method (using i-, then I
FIG. 8 will be used to explain where Ce is implemented. After die-bonding a 9ft IC into the recess 7 and connecting the circuit pattern 6 and the input/output pad (not shown) of the IC 9 with a wire bonding 10 made of a material such as gold, aluminum, or steel with the wire loop height as low as possible, the above steps are performed. ze9t
It was covered with a sealing resin 11 such as epoxy resin.
発明が解決しようとする課題
ICカードは従来の磁気ストライプカードと同様の76
0μmの厚が要求されるため、埋設されるICモジュー
ル30の厚さは大きく制約を受ける。例えば、第5図に
示すようなプラスチックカード1にICモジュール30
が埋設される構成のICカードの場合は、エンドミルや
トムソン金型等を用いて、プラスチックカード1に穴2
を設け、プラスチックカード1の残り部分ムの厚みが9
0μmとした場合、その穴2に埋設されるICモジュー
ル30Fi、670μmの厚さに制限する必要がある。Problems to be Solved by the Invention IC cards are similar to conventional magnetic stripe cards.
Since a thickness of 0 μm is required, the thickness of the IC module 30 to be buried is greatly restricted. For example, an IC module 30 is attached to a plastic card 1 as shown in FIG.
In the case of an IC card configured to be embedded, use an end mill or Thomson mold to drill holes 2 into plastic card 1.
, and the thickness of the remaining part of plastic card 1 is 9
When it is 0 μm, the thickness of the IC module 30Fi buried in the hole 2 needs to be limited to 670 μm.
このICモジュール30の厚みを決定する基本寸法とし
て、第7図の回路基板2oの8寸法がきわめてN要にな
る。しかし回路基板20を製造する上で8寸法を所定の
寸法範囲、例えば870th30μ諺の厚みに製造する
ことは非常に困難であり、製造歩留りも悪く、高価な回
路基板となっていた。また、スルーホール6を通して電
極3と回路パターン6を接続しているため、非常に複雑
な横這となり、更にICモジュール3oの実装面にdい
て、厚みが非常に薄いことからIC9の接続パッドと回
路パターン6を接続するワイヤー10のループ高さを非
常に低くする必要があるが、安定した低ループボンディ
ングは極めて雉かしいものである。As the basic dimensions for determining the thickness of this IC module 30, the 8 dimensions of the circuit board 2o in FIG. 7 are extremely necessary. However, in manufacturing the circuit board 20, it is very difficult to manufacture the circuit board 20 within a predetermined dimensional range, for example, 870mm thick and 30μ thick, resulting in a poor manufacturing yield and an expensive circuit board. In addition, since the electrode 3 and the circuit pattern 6 are connected through the through hole 6, it becomes very complicated. Although it is necessary to make the loop height of the wire 10 that connects the circuit pattern 6 very low, stable low loop bonding is extremely difficult.
更に今一つ、電極3の表面は軟質の金メツキ層を用いる
場合が多(、IC:モジュール30の実装中に裏面側と
なる電極3に傷が付き易く、外観不良となり製造歩留り
を低下させる原因にもなっていた。Furthermore, the surface of the electrode 3 is often made of a soft gold plating layer (IC: During the mounting of the module 30, the electrode 3 on the back side is easily scratched, resulting in poor appearance and lowering manufacturing yield. It was also becoming.
課題を鱗決するだめの手段
そして上記問題点全解決する本発明の技術的手段は、絶
縁性基板上に載置されたICと、上記ICの入出力パッ
ドと上記絶縁性基板上の導体パッドを接続する導体線と
、上記導体線の一部が露出するようにして、この導体線
と導体パッドと、上記IC’((積った封止樹脂と、上
記封止動面から一部露出した上記導体線と対応させて設
置された電極とで構成したものである。The technical means of the present invention for determining the problem and solving all of the above problems is to connect an IC mounted on an insulating substrate, an input/output pad of the IC, and a conductor pad on the insulating substrate. Connect the conductor wire and the conductor pad so that a part of the conductor wire is exposed, and connect the conductor wire and the conductor pad to the IC' ((the stacked sealing resin and the part exposed from the sealing surface). It is composed of electrodes installed in correspondence with the conductor wires described above.
作用
この構成により基板加工は射出成形法を用いて形成でき
、しかもスルーホールを要しない簡単な構造であること
から、厚み精度が高く、安価に製造できる。またICの
実装においてはループ高さの尚いワイヤーボンディング
条件で良いことから安定した、信頼性の尚い実装が可能
となり、更に電極を最終工程で形成することから、電極
キズの少ないICモジュールを製造することが可能とな
るO
実施例
以下本発明の一実施例について図面を参照しながら説明
する。第1図は本発明の第1の実施例によるICモジュ
ールの断面構造図であり、複数の導体パッド21を有す
る絶縁性基板22上の一面23に載置された工C24と
、上記IC24の複数の入出力パッド(図示せず)と上
記導体パッド21f!:接続する複数の導体線26と、
上記導体パッド21、上記IC24、上記導体線26を
含み、上記導体線26の一部を露出するように設けた封
止樹脂26と、上記封止佃脂26から一部露出した上記
導体線26と対応させて設置された複数の電極2Tで構
成されたものである。Function: With this configuration, the substrate can be processed using injection molding, and since it has a simple structure that does not require through holes, it has high thickness accuracy and can be manufactured at low cost. In addition, when mounting ICs, wire bonding conditions with a small loop height are sufficient, making stable and reliable mounting possible.Furthermore, since the electrodes are formed in the final process, IC modules with fewer electrode scratches can be achieved. Embodiment Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional structural diagram of an IC module according to a first embodiment of the present invention. input/output pad (not shown) and the conductor pad 21f! : A plurality of conductor wires 26 to be connected,
The sealing resin 26 includes the conductor pad 21, the IC 24, and the conductor wire 26, and is provided so that a part of the conductor wire 26 is exposed, and the conductor wire 26 is partially exposed from the sealing resin 26. It is composed of a plurality of electrodes 2T installed in correspondence with the electrodes 2T.
以上のように構成されたICモジュールについて以下そ
の製造方法を第2図を参照しながら説明する。例えば射
出成形法で絶縁性基板22を成形し、次に絶縁性基板2
2の上記−面23の所定の箇所にIO24を載置し、次
に上記ICE24の入出力パッド(図示せず)と上記導
体パッド21を例えばワイヤーボンディング法にて、金
、銅等の導体線26で所定のループ高さ金保って接続す
る(第2図a)。この時の上記導体線26のループ4高
さは、例えばICモジュールの総厚を考慮して次工程の
トランスファー成形用上金型と、上記導体線26が接触
する高さとする0
続いて金型を用いたトランスファー成形法にて上記導体
線26の最高部29が露出するように、例えばエポキシ
系の封止樹脂26で成形する(第2図b)。つまり(第
2図a)で上記導体線25の最高部29がトランスファ
ー成形の上金型に接触した状態で成形されるため、上記
4体ffM25の上記最高部29が上記封止樹脂26か
ら露出することになる。当然上記導体線25のループ高
さのバラツキがあっても、七ランスファー成形の上金型
で押えられることから上記最高部29の高さをほぼ均一
にすることが可能となり、上記最高部凶と上記封止樹脂
26の上面はほぼ平坦となる。しかしながら上記導体線
26と上記電極27との完全なコンタクlt−とるため
に、対土成形後上記封止樹脂260表面を例えば数ミク
ロンの厚さ研磨して、上記導体線26の上記最高部29
を広く露出させてもよい。A method of manufacturing the IC module configured as described above will be explained below with reference to FIG. 2. For example, the insulating substrate 22 is molded by injection molding, and then the insulating substrate 2
The IO 24 is placed at a predetermined location on the negative side 23 of the ICE 24, and then the input/output pad (not shown) of the ICE 24 and the conductor pad 21 are connected to a conductor wire made of gold, copper, etc. by wire bonding, for example. 26 to maintain a predetermined loop height and connect (FIG. 2a). At this time, the height of the loop 4 of the conductor wire 26 is set to the height at which the conductor wire 26 contacts the upper mold for transfer molding in the next step, taking into account the total thickness of the IC module. The conductor wire 26 is molded with, for example, an epoxy sealing resin 26 by a transfer molding method using a method such that the highest portion 29 of the conductor wire 26 is exposed (FIG. 2b). In other words, since the highest part 29 of the conductor wire 25 is molded in a state in which it is in contact with the upper mold for transfer molding (FIG. 2a), the highest part 29 of the four bodies ffM25 is exposed from the sealing resin 26. I will do it. Naturally, even if there is variation in the loop height of the conductor wire 25, since it is held down by the upper die of the seven transfer molding, it is possible to make the height of the highest part 29 almost uniform, and the height of the highest part 29 can be made almost uniform. The upper surface of the sealing resin 26 becomes substantially flat. However, in order to achieve complete contact between the conductor wire 26 and the electrode 27, the surface of the sealing resin 260 is polished to a thickness of, for example, several microns after soil molding.
may be widely exposed.
更に、露出した上記導体線26の上記最高部29に対応
して、上記導体線26と接触させるように上記封止樹脂
26上に、例えばメツキ法を用いて銅、ニッケル、金で
構成された上記電極27をバターニング形成する(第2
図C)。この時の上記電極27の個数、形状はISO規
格に合ったものであることはいうまでもない0
本構造では上記IC24が載置された一面23側のみ封
止樹脂26で成形したが、上記絶縁性基板22の偵の主
面28側も封止1ガ脂2eで被覆されたものでも可能で
あり、この構造であれば同一の封止材料で上記IC24
が表、裏側ともに封止されているため、上記IC24に
かかるひずみストレスが小さくなり、上記IC24の信
頼性を高めることが可能となる。Further, in correspondence to the exposed highest portion 29 of the conductor wire 26, a layer made of copper, nickel, or gold is placed on the sealing resin 26 by, for example, a plating method so as to be in contact with the conductor wire 26. The electrode 27 is patterned (second
Figure C). It goes without saying that the number and shape of the electrodes 27 at this time comply with the ISO standard. In this structure, only the side 23 on which the IC 24 is placed is molded with the sealing resin 26, but the It is also possible to cover the main surface 28 side of the insulating substrate 22 with the sealing material 2e, and with this structure, the above IC 24 can be coated with the same sealing material.
Since both the front and back sides are sealed, the strain stress applied to the IC 24 is reduced, making it possible to improve the reliability of the IC 24.
次に本発明の第2の実施例として第3図を用いて説明す
る。主要構成は第1の実施例と同等であるが、上記絶縁
性基板22の構造を変更したものであり、上記絶縁性基
板22の少なくとも上記IC24の入出力パッド(図示
せず)と上記導体パッド21を上記導体線26で接続す
る経路の上記絶縁性基板22に壁30を設けた構造とす
る。Next, a second embodiment of the present invention will be described using FIG. 3. The main structure is the same as that of the first embodiment, but the structure of the insulating substrate 22 is changed, and at least the input/output pads (not shown) of the IC 24 and the conductor pads of the insulating substrate 22 are changed. In this structure, a wall 30 is provided on the insulating substrate 22 along a path where the conductor wires 21 are connected to each other by the conductor wire 26.
上8C壁30の高さはトランスファー成形用上金型の面
から上記導体線26の線径をほぼ差し引いた高さとし、
トランスファー成形時、上金型と上記壁30で上記導体
線26をサンドイッチして上記導体線26の上記最上部
29の高さを一定にする。The height of the upper 8C wall 30 is approximately the height obtained by subtracting the wire diameter of the conductor wire 26 from the surface of the upper mold for transfer molding,
During transfer molding, the conductor wire 26 is sandwiched between the upper mold and the wall 30 so that the height of the uppermost portion 29 of the conductor wire 26 is kept constant.
またこの構造であれば上記導体線26をワイヤーボンデ
ィングする際、ワイヤーボンディング装置のボンディン
グ性のバラツキ(特にループ高さが低くなる場合が問題
)による上記導体線26と上記電極27との接触不良を
なくすことが可能となる。In addition, with this structure, when wire bonding the conductor wire 26, poor contact between the conductor wire 26 and the electrode 27 due to variations in bonding performance of the wire bonding equipment (particularly a problem when the loop height becomes low) can be avoided. It becomes possible to eliminate it.
以上のべたICモジュールの構造では絶縁性基板22の
他面28は例えばエンペラ材料のような絶縁性街脂であ
シ、ICカード化する場合、カード材であるエンビに対
して、絶縁性樹脂が直接所定の接着剤で接着されること
になる。次に、カード材とICモジュールの接着力を更
に強化するため、第3の実施例を第4図に示し説明する
。上記絶縁性基板22の他面28に、例えば銅、ニッケ
ル、ステンレススチール等の金属板31を上記他面28
のほぼ全面に形成したものである。この構造であれば、
ICカード化する場合カード材であるエンビには金属板
31が接着剤で接着されることになり、絶縁性樹脂が接
着されるより接着強度が強く、イハ頼性の高いICカー
ドを作ることが可能となる。上記金属板31は上記絶縁
性基板22を作る時、上記導体パッド21と同時に形成
するか、あるいは上記電極27と同時に形成してもかま
わない。In the structure of the solid IC module described above, the other surface 28 of the insulating substrate 22 is made of insulating street resin such as Empera material, for example, and when it is made into an IC card, the insulating resin is used as the card material. It will be directly bonded with a specified adhesive. Next, in order to further strengthen the adhesive force between the card material and the IC module, a third embodiment will be described as shown in FIG. 4. A metal plate 31 made of copper, nickel, stainless steel, etc. is placed on the other surface 28 of the insulating substrate 22.
It is formed on almost the entire surface of. If this structure is
When making an IC card, the metal plate 31 is bonded to the card material Enbi using an adhesive, which has stronger adhesive strength than if an insulating resin is bonded, making it possible to create a highly reliable IC card. It becomes possible. The metal plate 31 may be formed at the same time as the conductor pad 21 or the electrode 27 when the insulating substrate 22 is made.
以上のべてきた本発明に用いた絶縁性基板22は射出成
形法で作製しているが、ICカード用ICモジュールは
厚み精度を高く必要とすることから、精度の高い射出成
形法を採用した。The insulating substrate 22 used in the present invention described above was manufactured by injection molding, but since IC modules for IC cards require high thickness accuracy, a highly accurate injection molding method was adopted. .
また上記絶縁性基板21の一面23には導体パッド21
を有しており、上記導体線26は上記導体パッド21と
上記IC24上の入出力パッド(図示せず)を接映して
いるが、上記導体パッド21を設けず、その代りに上記
IC24の入出力バンドを犬きくするか、上記I C2
4上にダミーのパッドを設けて、上記IC24上にて上
記導体線26をワイヤーボンディングして所定の高さの
ループを作ってもかまわない。Further, a conductive pad 21 is provided on one surface 23 of the insulating substrate 21.
The conductor wire 26 closely reflects the conductor pad 21 and the input/output pad (not shown) on the IC 24, but the conductor pad 21 is not provided and the input/output pad (not shown) on the IC 24 is provided instead. Make the output band louder or use the above IC2
A dummy pad may be provided on the IC 24, and the conductor wire 26 may be wire-bonded on the IC 24 to form a loop of a predetermined height.
発明の効果
以上のように本発明によれば、基板加工に射出成形法を
用いて形成でき、しかもスルーホールを要しない簡単な
構造であることから、厚み精度が高く、安価に製造でき
る。また実装においてはループ高さの高いワイヤーボン
ディング条件で良いことから、安定した、信頼性の昼い
IC実装が可能となり、更に電極を最終工程で形成する
ことから、を極キズの少ないICモジュールを製造する
ことが可能となる。Effects of the Invention As described above, according to the present invention, the substrate can be formed using the injection molding method and has a simple structure that does not require through holes, so it can be manufactured at low cost with high thickness accuracy. In addition, since wire bonding conditions with a high loop height are sufficient for mounting, stable and reliable IC mounting is possible.Furthermore, since the electrodes are formed in the final process, IC modules with extremely few scratches can be produced. It becomes possible to manufacture.
第1図は本発明の第1の実施例のICモジュールの断面
図、第2図&%Oは本発明の第1の実施例のICモジュ
ールの製造工程を示す断面図、第3図は本発明の第2の
実施例の断面図、第4図は本発明の第3の実施例の断面
図、第5図はICカードの斜視図、第5図は第5図ムー
ム′線の断面図、第7図は従来の回路基板の断面図、第
8図は従来のICモジュールの断面図である。
21・・・・・・導体パッド、22・・・・・・絶縁性
基板、23・・・・・・−面、24・・・・・・IC,
25・・・・・・導体線、26・・・・・・封止樹脂、
27・・・・・・電極、28・・・・・・他面、29・
・・・・・最上部、30・・・・・・壁、31・・・・
・・金属板。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
譚体ハ町7ド
第2図
第3図
第5図
/j)−’F’
30IOモジ餐−ル
第5図FIG. 1 is a sectional view of an IC module according to the first embodiment of the present invention, FIG. 4 is a sectional view of the third embodiment of the invention, FIG. 5 is a perspective view of the IC card, and FIG. 5 is a sectional view taken along the Moum' line in FIG. , FIG. 7 is a sectional view of a conventional circuit board, and FIG. 8 is a sectional view of a conventional IC module. 21... Conductor pad, 22... Insulating substrate, 23... - surface, 24... IC,
25... Conductor wire, 26... Sealing resin,
27...electrode, 28...other surface, 29.
...Top, 30...Wall, 31...
...Metal plate. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 7 Figure 2 Figure 3 Figure 5 /j) - 'F' 30IOMoji restaurant Figure 5
Claims (7)
載置された集積回路と、上記集積回路の複数の入出力パ
ッドと上記導体パッドを接続する複数の導体線と、上記
導体線の一部を露出させて、この導体線と上記導体パッ
ドと上記集積回路を覆った絶縁性保護材と、この絶縁性
保護材から一部露出した上記導体線と対応させて設置さ
れた複数の電極とを備えた集積回路装置。(1) An integrated circuit mounted on one surface of an insulating substrate having a plurality of conductor pads, a plurality of conductor wires connecting the plurality of input/output pads of the integrated circuit and the conductor pads, and a plurality of conductor wires connecting the conductor pads to the plurality of input/output pads of the integrated circuit; An insulating protective material that partially exposes the conductor wire, the conductor pad, and the integrated circuit, and a plurality of electrodes that are installed in correspondence with the conductor wire that is partially exposed from the insulative protective material. An integrated circuit device comprising:
の範囲第1項に記載の集積回路装置。(2) The integrated circuit device according to claim 1, wherein the insulating substrate is formed by injection molding.
パッドの間に導体パッドより高い絶縁性の壁を設けた特
許請求の範囲第1項に記載の集積回路装置。(3) The integrated circuit device according to claim 1, wherein a wall having higher insulating properties than the conductor pads is provided between the portion of the insulating substrate on which the integrated circuit is mounted and the conductor pads.
囲第1項に記載の集積回路装置。(4) The integrated circuit device according to claim 1, wherein a metal plate is provided on the other surface of the insulating substrate.
集積回路を載置する工程と、上記集積回路の複数の入出
力パッドと上記導体パッドを複数の導体線で接続する工
程と、上記導体線の一部を露出させて、この導体線と上
記導体パッドと上記集積回路を絶縁性保護材で覆う工程
と、上記絶縁性保護材から一部露出した上記導体線と対
応させて複数の電極を形成する工程とよりなる集積回路
装置の製造方法。(5) a step of placing an integrated circuit on one surface of an insulating substrate having a plurality of conductor pads; a step of connecting the plurality of input/output pads of the integrated circuit and the conductor pads with a plurality of conductor wires; A step of exposing a part of the conductor wire and covering the conductor wire, the conductor pad, and the integrated circuit with an insulating protective material; A method for manufacturing an integrated circuit device, comprising the step of forming electrodes.
ある特許請求の範囲第5項に記載の集積回路装置の製造
方法。(6) The method for manufacturing an integrated circuit device according to claim 5, wherein the method for connecting the conductor wires is a wire bonding method.
護材を研磨する方法である特許請求の範囲第5項に記載
の集積回路装置の製造方法。(7) The method of manufacturing an integrated circuit device according to claim 5, wherein the method of exposing a portion of the conductor wire is a method of polishing the insulating protective material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63098660A JPH01270250A (en) | 1988-04-21 | 1988-04-21 | Integrated circuit device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63098660A JPH01270250A (en) | 1988-04-21 | 1988-04-21 | Integrated circuit device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01270250A true JPH01270250A (en) | 1989-10-27 |
Family
ID=14225672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63098660A Pending JPH01270250A (en) | 1988-04-21 | 1988-04-21 | Integrated circuit device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01270250A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009128974A (en) * | 2007-11-20 | 2009-06-11 | Dainippon Printing Co Ltd | IC module and IC module manufacturing method |
-
1988
- 1988-04-21 JP JP63098660A patent/JPH01270250A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009128974A (en) * | 2007-11-20 | 2009-06-11 | Dainippon Printing Co Ltd | IC module and IC module manufacturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1639644B1 (en) | Integrated circuit package having stacked integrated circuits and method therefor | |
JP2702012B2 (en) | IC chip support | |
JPH0630985B2 (en) | Method for mounting integrated circuit on support, device for supporting integrated circuit, and card comprising microelectronic circuit device | |
JPH0852968A (en) | Non-contact card and its production | |
KR20010020324A (en) | Board for mounting semiconductor element, method for manufacturing the same, and semiconductor device | |
KR20000029830A (en) | Chip card, process for manufacturing a chip card and semiconductor chip for use in a chip card | |
US5877941A (en) | IC card and method of fabricating the same | |
JPS6230096A (en) | Method of mounting integrated circuti to supporter, device assembled through said method and card with micro-electroniccircuit device | |
US7315070B2 (en) | Fingerprint sensor package | |
JPS607760A (en) | Manufacture of ic card | |
JPH0387299A (en) | Ic card | |
JPH08148635A (en) | Semiconductor device | |
JPH01270250A (en) | Integrated circuit device and its manufacture | |
JPH05151424A (en) | Integrated circuit token | |
CN107408220B (en) | Strip-shaped substrate for producing a chip card module | |
JPH0324383Y2 (en) | ||
JPH01165495A (en) | Ic card and ic module for ic card | |
JP2588548B2 (en) | IC card | |
JP3170519B2 (en) | Memory card | |
JPS5984453A (en) | Thin type semiconductor device | |
JP2904785B2 (en) | IC module with built-in card | |
JPS633998A (en) | Ic card | |
JP3485736B2 (en) | Semiconductor device and manufacturing method thereof | |
JP2578443B2 (en) | IC card and IC module for IC card | |
JP2510520B2 (en) | IC card and IC module for IC card |