JPH01241818A - Device for forming light excitation film - Google Patents
Device for forming light excitation filmInfo
- Publication number
- JPH01241818A JPH01241818A JP6814188A JP6814188A JPH01241818A JP H01241818 A JPH01241818 A JP H01241818A JP 6814188 A JP6814188 A JP 6814188A JP 6814188 A JP6814188 A JP 6814188A JP H01241818 A JPH01241818 A JP H01241818A
- Authority
- JP
- Japan
- Prior art keywords
- light
- gas
- film
- window
- transmission window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005284 excitation Effects 0.000 title description 4
- 239000007789 gas Substances 0.000 claims abstract description 27
- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 239000000112 cooling gas Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 35
- 230000000694 effects Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000001443 photoexcitation Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 244000007853 Sarothamnus scoparius Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔宅間の目的〕
(産業上の利用分野)
本宅間は、光励起〔ヒ学反応を利用して基板上に薄嘆を
形成する光CVD装置に係わり、特に光透過窓の冷却方
法に改良をはかった光CVD装置Jjl+こ関する。Detailed Description of the Invention [Purpose of Takuma] (Field of Industrial Application) This Takuma is concerned with a photo-CVD device that forms a thin film on a substrate by using photoexcitation (H-chemical reaction), and in particular, it is concerned with a photo-CVD device that forms a thin film on a substrate using a light excitation reaction. The present invention relates to a photo-CVD device Jjl+ which has an improved cooling method.
(従来の技術)
近年、半導体集積回路の進展1こ伴って、デバイスの微
細比及び高集積[ヒが9求され、その実現のために低巡
でダメージのない半導体製造プロセスである光励起プロ
セスが注目されている。光励起プロセスを利用した装置
としては、光CVD装置が実用fヒさnている。この装
置は、被処理ウェーハを設置する真空容器、この容器内
1こ原料ガスを導入する手段、d器の一部に設けた光透
過窓を通してウェーハ上に光を照射する手段等から成さ
れる。そして、紫外光等の照射により、原料ガスと共1
こウェーハ表面を励起することによりて、ウェーハ上に
CVD嗅を堆積している。(Prior Art) In recent years, as semiconductor integrated circuits have progressed, there has been a demand for smaller device sizes and higher integration.To achieve this, the optical excitation process, which is a low-cycle and damage-free semiconductor manufacturing process, has been developed. Attention has been paid. As a device using a photoexcitation process, a photo-CVD device is in practical use. This device consists of a vacuum container in which the wafer to be processed is placed, a means for introducing a raw material gas into the container, a means for irradiating light onto the wafer through a light transmission window provided in a part of the d chamber, etc. . Then, by irradiation with ultraviolet light, etc., 1
By exciting the wafer surface, CVD particles are deposited on the wafer.
ところで、光CVD装置では、被処理ウェー/1にCV
D模を堆積している際に、光透過窓にも薄膜が堆積して
しまう。これは光透過窓も@度が上昇し膜堆積反応が促
進されるからである。光透過窓に薄膜が堆積すると、ウ
ェーハへの入射光量が少なくなり、膜形成速度が大巾に
低下する。このため従来からこの光透過窓への膜堆積で
きるだけ少なくする方法が考えられてきた。その一つと
して例えば蒸気圧の低いフォンブリンオイルを予め光透
過窓1こ塗布する方法がある。これはフォノブリ/オイ
ルが光透過窓への膜堆積防止の役割をするft、)にフ
ォノプリンオイルが蒸発してウェーハ上の堆積膜中へ不
純物として収り込まれてしまうという欠点がある。池の
方法として、反応ガスが直接光透過窓に接触しない様に
反応ガスと光透過窓の間に例えばN!ガスの様な不活性
ガスを流すやり方がある。しかしこの17% O反応ガ
スとN!ガスが実際に混じり合わない様にすることはほ
とんど不可能なため、光透過窓への膜堆積が少しずつ行
なわれると同時曇こ反応ガス%N、ガスGこよる不完全
な希釈が行なわれるため昏こ、ウエーノ・上への廃堆積
速度や膜質の均−性等に悪影響を及ぼしてしまり。また
別の方法としては光源側から光透過窓表面にN、ガス等
を吹きつけて窓を冷却する方法があるが、光透過窓と光
源が近接して配置されている場合が大半で、その周辺部
からのN、ガス吹きつけではガスの周囲への拡散が生じ
、光透過窓冷却の効果がかなり減少してしまう。By the way, in the optical CVD apparatus, CV
While depositing pattern D, a thin film is also deposited on the light transmission window. This is because the temperature of the light transmitting window also increases and the film deposition reaction is promoted. When a thin film is deposited on the light-transmitting window, the amount of light incident on the wafer is reduced, and the film formation rate is significantly reduced. For this reason, methods have been considered to minimize the amount of film deposited on the light transmission window. One such method is to apply Fomblin oil, which has a low vapor pressure, in advance to one light transmitting window. This has the disadvantage that the phonoprine oil evaporates during the period in which the phonoprine oil plays the role of preventing film deposition on the light transmitting window and is trapped as an impurity in the deposited film on the wafer. As a method, for example, N! is placed between the reaction gas and the light transmission window so that the reaction gas does not come into direct contact with the light transmission window. There is a way to flow an inert gas such as gas. However, this 17% O reaction gas and N! Since it is almost impossible to prevent the gases from actually mixing, gradual film deposition on the light-transmitting window results in incomplete dilution due to simultaneous clouding of the reactant gas%N and gasG. This has a negative effect on the rate of waste deposition on the wafer and the uniformity of the film quality. Another method is to cool the window by blowing N, gas, etc. onto the surface of the light-transmitting window from the light source side, but in most cases, the light-transmitting window and the light source are placed close to each other. If N or gas is blown from the periphery, the gas will diffuse to the periphery, and the effect of cooling the light transmission window will be considerably reduced.
(発明が解決しようとする課題)
このように従来、光CVD装置iifこおいては5元透
過窓に堆積するi1w模により、入射光量の低下を米た
し膜形成速度の著しい低下を招くか、もしくは前述した
様な光透過窓への膜堆積防止方法が講じられてきたが、
いずれもその効果は不十分かあるいは別の悪影響が生じ
る結果となっていた。(Problem to be Solved by the Invention) Conventionally, in a photo-CVD device (IIF), the I1W pattern deposited on the five-element transmission window causes a decrease in the amount of incident light, leading to a significant decrease in the film formation rate. Alternatively, methods have been taken to prevent film deposition on the light transmitting window as described above.
In either case, the effects were insufficient or other negative effects occurred.
本発明は上記事情を考慮してなされたもので、膜形成速
度の低下を招く光透過窓への膜堆積を防止する効果が十
分ある上に、これによってウェーハ上に堆積される膜へ
の悪影響が生じることのない光CVD装置を提供するた
めになさルたものである6
〔発明の構成〕
(課題を解決するための手段)
本発明の骨子は、光透過窓の中を冷却用ガスを流すこと
により窓冷却を行ない、光透過窓への膜堆積を防止する
ことにある。The present invention has been developed in consideration of the above circumstances, and is not only effective in preventing film deposition on the light transmission window, which causes a decrease in film formation speed, but also has an adverse effect on the film deposited on the wafer. 6 [Structure of the Invention] (Means for Solving the Problems) The gist of the present invention is to supply a cooling gas through a light transmission window The objective is to cool the window by flowing it and prevent film deposition on the light-transmitting window.
即ち本発明は、原料ガスを光励起分解して被処理基板上
に模を形成する元CVD装Jl+こおいて、前記基板を
収各して膜形成に供される膜形成室と、この膜形成室の
一部に設けられた光透過窓と、前記膜形成室内に原料ガ
スを導入する手段と、前記膜形成室の外部に設けられ、
該膜形成室内の基板沓こ前記光透過窓を通して元を照射
する光源からなり、且つ前記光透過窓中に冷却用ガスを
流す手段を具備してなるものである。That is, the present invention provides a former CVD apparatus for forming a pattern on a substrate to be processed by photoexcited decomposition of a source gas, a film forming chamber in which the substrate is collected and used for film formation, and a film forming chamber for forming the film. a light transmitting window provided in a part of the chamber, a means for introducing source gas into the film forming chamber, and a means provided outside the film forming chamber,
The substrate holder in the film forming chamber includes a light source that irradiates the source through the light transmission window, and is provided with means for flowing cooling gas into the light transmission window.
(作用)
本発明によれば、光透過窓中に冷却用ガスを流すこと曇
こより効果的に該光透過窓を冷却することができる。こ
rttこよって前記光透過窓に嘆が堆積しなくなること
1こより入射光量の低下をもたらすこともなく安定した
膜形成を行なうことができる。(Function) According to the present invention, the light transmitting window can be cooled more effectively than fogging by flowing cooling gas into the light transmitting window. As a result, the film is not deposited on the light transmitting window, and stable film formation can be performed without causing a decrease in the amount of incident light.
また冷却用ガスは前記光透過窓中を流れるので従来の様
な嘆付着防止用オイルからの成長膜中への不純物混入や
、冷却用ガスによる反応ガスの希釈等の悪影響が生じる
こともない。Furthermore, since the cooling gas flows through the light transmitting window, there are no adverse effects such as contamination of impurities into the grown film from adhesion prevention oil or dilution of the reaction gas by the cooling gas, which is the case in the prior art.
(実施例)
以下5本発明の詳細を図示の実施同憂こよりで説明する
。第1図は本発明の実施例に係わる光CVD装置の主快
部を模式的1こ示す概略構成図である。(Example) The following five details of the present invention will be explained with reference to the illustrated embodiments. FIG. 1 is a schematic configuration diagram schematically showing the main part of an optical CVD apparatus according to an embodiment of the present invention.
図中11は膜形成室であり、この膜形成室11内には例
えばSiウェーハやガラス基板等の被処理垂板12を載
置した基板ホルダ13及び試料台14が収各さnている
。基板ホルダエ3は、チャック151こより試料台14
fこ装着されている。試料台14の内部には、基板12
を加熱するためのヒータ16が設けられている。また嘆
形成室11内にはガス供給部17からモノシランC3i
H4)等の原料ガスが導入され、膜形成室11内のガス
は排気ポンプ18により排気されるものとなっている。In the figure, reference numeral 11 denotes a film forming chamber, and in this film forming chamber 11, a substrate holder 13 and a sample stage 14 are housed, on which a plate 12 to be processed, such as a Si wafer or a glass substrate, is mounted. The substrate holder 3 is attached to the sample stage 14 through the chuck 151.
f is installed. Inside the sample stage 14, there is a substrate 12.
A heater 16 is provided for heating. In addition, monosilane C3i is supplied from the gas supply section 17 into the formation chamber 11.
A raw material gas such as H4) is introduced, and the gas in the film forming chamber 11 is exhausted by an exhaust pump 18.
一方(側形成室11の下部には光源収容室19が連設さ
れており、この光源収容室19内には紫外光を放射する
例えば低圧水銀ランプからなる光源zOが収各されてお
り、この光源20の下部(こは反射板21が配置されて
いる。光源収容室工9内は紫外光を吸収しないガス雰囲
気或いは真空昏こ医持されている。また膜形成室11と
光源収容室19との間にはこの画室の分離も兼ねて光透
過窓22が設けられている。この光透過窓22は、紫外
領域の光を十分1こ透過する石英板等で形成され、ホル
ダー23に固定されている。光透過窓22には中(こ冷
却用ガスを流せる様昏こ穴24が開いておりこの中をN
、あるいはHe等の紫外光と吸収しないガスを流して光
透過窓22が昇温しない様に冷却している。冷却中ガス
はホルダー23側に連結さnて開いた穴25を通して外
部より導入される。On the other hand, a light source accommodating chamber 19 is connected to the lower part of the side forming chamber 11, and a light source zO consisting of, for example, a low-pressure mercury lamp that emits ultraviolet light is housed in this light source accommodating chamber 19. A reflector plate 21 is disposed below the light source 20. The inside of the light source housing chamber 9 is kept in a gas atmosphere or a vacuum atmosphere that does not absorb ultraviolet light. A light-transmitting window 22 is provided between the compartment and the holder 23 to separate the compartment. The light transmitting window 22 has a hollow hole 24 through which cooling gas can flow.
Alternatively, the light transmitting window 22 is cooled by flowing a gas such as He that does not absorb ultraviolet light so as not to increase its temperature. During cooling, gas is introduced from the outside through a hole 25 connected to the holder 23 and opened.
光透過窓22とホルダー23は図示していないがシール
部材で接続されており、これをこよりて模形戎室1工と
光源収容室I9が圧力的に分離されると共に、冷却用ガ
スが外部にもれない様をこなっている。Although the light transmission window 22 and the holder 23 are not shown, they are connected by a sealing member, and through this the model armature chamber 1 and the light source chamber I9 are pressure-separated, and the cooling gas is released from the outside. I'm doing my best to keep it from leaking.
第2図は前記光透過窓を上部から見た平面図である。光
透過窓22内に冷却用ガスを流すための穴は、同図(a
)の斜線部24で示す様に1つの穴が光透過窓22全体
をカバーする様に開けられてもよいし、同図(b)の斜
線部24−1〜24−6で示す様(こ、光透過窓22内
に複数の穴を開け、ここに冷却中ガスを流しても良い。FIG. 2 is a plan view of the light transmitting window viewed from above. The holes for flowing the cooling gas into the light transmission window 22 are shown in the same figure (a).
), one hole may be formed to cover the entire light transmitting window 22, as shown by the shaded area 24 in FIG. , a plurality of holes may be made in the light transmission window 22 and gas may be allowed to flow therethrough during cooling.
この様な光透過窓22内を冷却中ガスを流す構成であれ
ば5元透過窓22の冷却は非常曇こ効果的に行なわれる
ため、被処理基板12の771]熱と光源20からの副
射熱によりて通常中じる光透過窓22の滉度上昇を抑え
ることができ、こQiこよって光透過窓22醗こは模が
堆積しなくなり、入射光量の低下をもたらすことなく、
被処理基板12iこ安定した膜形成を行なうことができ
る。また従来の様な光透過窓22への模付着防止オイル
の塗布も必要なくなるので、このオイルからの成長膜中
への不純物混入もなくなり、また不活性ガスを光透過窓
と反応ガスとの間昏こ流して窓への喚付着防止をはかつ
ていた従来の方法で生じていた反応ガスの不活性ガスで
の希釈による成長速度の変[ヒや膜質等への悪影響も生
じることがなく、膜質の向上と安定(’r11.’iは
かることができる。With such a structure in which gas flows through the light transmission window 22 during cooling, the five-source transmission window 22 is cooled very effectively, so that the 771] heat of the substrate 12 to be processed and the secondary heat from the light source 20 are removed. It is possible to suppress the increase in the intensity of the light transmitting window 22, which is normally caused by heat radiation, and as a result of this, the light transmitting window 22 is free from deposits of marks, without causing a decrease in the amount of incident light.
A stable film can be formed on the substrate to be processed 12i. In addition, it is no longer necessary to apply oil to the light-transmitting window 22 to prevent adhesion, unlike in the past, so there is no need for impurities to be mixed into the grown film from this oil. In the conventional method, the reaction gas is diluted with an inert gas, which causes no change in the growth rate or adverse effects on the film quality. Improvement and stability ('r11.'i can be measured.
第3図は本発明の窮2の実施例と模式的に示す概略図で
あり、第1図で示す光透過窓22とホルダー23部分の
み示しである。なお、端1図と同一部分には同一符号を
付して、その詳しい説明は省略する。FIG. 3 is a schematic view schematically showing a second embodiment of the present invention, and only the light transmitting window 22 and holder 23 shown in FIG. 1 are shown. Incidentally, the same parts as those in the first diagram are given the same reference numerals, and detailed explanation thereof will be omitted.
この実施例が先に説明した実施例と異なる点は、光透過
窓22を着脱d易とした点]こある。即ち先の実施例で
は、ホルダー23に光透過窓22がシール部材を介して
固定さnていたが、本実施例では、光透過窓22はホル
ダー23の下部よりOリンクシール26−I〜26−4
を介して支柱27−エ・2等1こより押し上げ、密着さ
せである。冷却中ガスは第1図と同様、ホルダー23及
び光透過窓22(こ開けられた穴25 + 24 ’:
i通して流れる様になっており、しかも0リングシール
によって外部とは隔雅されている1こめ、冷却中ガスが
−模形代室に流れ出ろことはない。この様な構造だと光
透過窓220着脱が各偶となり、必咬φこ応じて収り出
し、洗浄あるいは交換することができる。This embodiment differs from the previously described embodiments in that the light transmitting window 22 is easily attached and detached. That is, in the previous embodiment, the light transmitting window 22 was fixed to the holder 23 via a sealing member, but in this embodiment, the light transmitting window 22 is fixed to the holder 23 from the bottom through the O-link seals 26-I to 26. -4
Push up the pillars 27-E and 2 etc. through the 1st column and bring them into close contact. During cooling, gas flows through the holder 23 and the light transmission window 22 (holes 25 + 24':
During cooling, gas will not flow into the model room, since it is designed to flow through the model and is separated from the outside by an O-ring seal. With such a structure, the light transmitting window 220 can be attached and detached individually, and can be taken out, cleaned, or replaced as required.
この構造の禍合も先の実施例と同様の効果を得ることが
できる。なお本実施例では光透過窓22はホルダー23
の下部番こ設けた’t&を示しているが。Even with this structure, the same effect as in the previous embodiment can be obtained. Note that in this embodiment, the light transmitting window 22 is a holder 23.
The bottom number indicates 't&.
逆(こ上部Eこ設けることもできる。It is also possible to provide the reverse (this upper part E).
第4図は本発明の第3の実施例を模式的に示す概略図で
あり、箒3図と同様′#S透過窓22とホルダ一部分の
みボしである。なお第1図、第3図と同一部分1こは同
一符号を付しr、その詳しい説明は省略する。FIG. 4 is a schematic diagram showing a third embodiment of the present invention, and like the broom in FIG. 3, only the '#S transmission window 22 and a portion of the holder are blanked out. Note that the same parts as in FIGS. 1 and 3 are designated by the same reference numerals, and detailed explanation thereof will be omitted.
この実施例が先(こ説明した第1及び第2の実施例と異
なる点は、光透過窓を2枚で構成する点1こある。即ち
先の実施例では光透過窓22中(こ穴24を開けて、そ
の中に冷却中ガスを流してぃfこが、本実施例では、2
枚の光透過窓22−1と22−2で構成し、その中間沓
こできるスペース28に冷却用ガスを流す様醗こしてい
る。光透過窓22−1 。This embodiment differs from the first and second embodiments described above in that the light transmitting window is composed of two sheets. In other words, in the previous embodiment, there is a hole in the light transmitting window 22. 24 and let the cooling gas flow through it, but in this example, 24 is opened.
It is composed of two light transmitting windows 22-1 and 22-2, and a cooling gas is allowed to flow through a space 28 between them. Light transmission window 22-1.
2は周辺部においてそれぞれ0すyグシール26−1〜
4を介してホルダー23と接触し、しかも上下方向から
支柱27−1〜4等で押えることによって、この内部番
こ密閉状態で冷却用ガスを流すことができる。なお本実
施例だと、光透過窓22−1.2への穴開は加工も必要
なく、また光透過窓22−1.2の着脱も容易となり、
必要に応じて取り出し、洗浄あるいは交換することがで
きる。2 are 0syg seals 26-1~
By contacting the holder 23 through the holder 27-4 and pressing it from above and below with the supports 27-1 to 27-4, etc., the cooling gas can flow in this internal holder in a sealed state. In addition, in this embodiment, no machining is required to make a hole in the light transmission window 22-1.2, and attachment and detachment of the light transmission window 22-1.2 is easy.
It can be taken out, cleaned or replaced as needed.
この様な構面であっても先の実施例と同様の効果を得る
ことができる。Even with such a structure, the same effects as in the previous embodiment can be obtained.
なお本発明は上述した各実施例に限定されるものではな
い。例えば光透過窓と被処理基板を一体化したカセット
式トレーによって模形戎室内に搬送する構造のものであ
ってもよい。また光透過窓冷却機構としてホルダーの水
冷等曇こよる冷却、光源室側からの冷却ガス吹きつけ等
の機構が付加されたものであってもよい。また冷却用ガ
スはN、。Note that the present invention is not limited to the embodiments described above. For example, the substrate may be transported into the model chamber by a cassette-type tray that integrates the light-transmitting window and the substrate to be processed. Further, as a light transmission window cooling mechanism, a mechanism such as water cooling of the holder to prevent fogging, cooling gas blowing from the light source chamber side, etc. may be added. Also, the cooling gas is N.
Heに限るものではなく、原料ガスの励起波長光を十分
に透過するものであれば良い。更に前記光源は低圧水銀
ランプに限るものではなく重水素ランプ、エキシマレー
ザ等でもよい。また原料ガス及び形成される模は、限定
されるものではなく、光CVDとして用いられるもので
あればよい。更に5本発明では、光励起による膜形成憂
こ例をとって述べたが、光励起によるエツチング装置あ
るいはそれとの組み合せ曇こ8いても同様憂こ適用する
ことが可能である。その他本艶明の髪旨を逸脱しない範
囲で、種々変形して実施することができる。The material is not limited to He, but any material that can sufficiently transmit the excitation wavelength light of the source gas may be used. Furthermore, the light source is not limited to a low-pressure mercury lamp, but may also be a deuterium lamp, an excimer laser, or the like. Further, the raw material gas and the pattern to be formed are not limited as long as they can be used for photo-CVD. Furthermore, although the present invention has been described using an example of film formation by photoexcitation, it is also possible to apply the same method to an etching device using photoexcitation or a combination thereof. In addition, various modifications can be made without departing from the essence of the present glossy hair.
以上詳述した様−こ本発明によれば光透過窓内に冷却用
ガスを流すWjI造であるため、光透過窓の冷却効果は
高く、こt″Lによって光透過窓に僕が堆積しなくなり
、入射光量の低下E%たらすことなく、被処理基板に安
定した膜形成を行なうことができる。また従来の様な″
R,透過窓への模付着防止オイル塗布矢や、光透過窓と
反応ガスとの間に不活性ガスを流す方法で生じていたオ
イルからの成長膜D
中への不純物混入や5反応ガスの不活性による希釈など
の膜質等に与える悪影響も生じることがなり、膜質の向
上と安定fヒを図ることができる。As detailed above, according to the present invention, since the cooling gas is flowed inside the light transmitting window, the cooling effect of the light transmitting window is high, and this t''L prevents gas from accumulating on the light transmitting window. It is possible to form a stable film on the substrate to be processed without reducing the amount of incident light by E%.
R. A film grown from oil that was generated by applying oil to prevent false adhesion to the transparent window or flowing an inert gas between the light transmitting window and the reaction gas D. There is also an adverse effect on film quality, such as dilution due to inertness, and it is possible to improve film quality and stability.
第1図は本発明の第1の実施例に係わる光CVD袈装を
模式的に示す概略構成図、第2図は上記装置に用いた光
透過窓を上部から見た平面図、第3図、@4図はそれぞ
れ本発明の第2.第3の実施例の要部構成を示す概略構
成図である。
11・・・膜形成室、12・・・被処理基板、13・・
・基板ホルダー、14・・・試料台、15・・・チャッ
ク、16・・・ヒーター、17・・・ガス供給部、18
・・・真空ポンプ、19・・・光源収容部、20・・・
光源、21・・・反射板% 22・・・光透過窓、23
・・・ホルダー、24゜25・・・耐却用ガス流通穴、
26・・・0リングシール、27・・・支柱。
代理人 弁理士 則 近 憲 佑
同 松 山 光 之([の
+東 (V+1FIG. 1 is a schematic configuration diagram schematically showing an optical CVD enclosure according to a first embodiment of the present invention, FIG. 2 is a plan view of the light transmission window used in the above device, viewed from above, and FIG. 3 , @4 Figures 2 and 4 of the present invention, respectively. FIG. 7 is a schematic configuration diagram showing the configuration of main parts of a third embodiment. 11... Film formation chamber, 12... Substrate to be processed, 13...
・Substrate holder, 14... Sample stage, 15... Chuck, 16... Heater, 17... Gas supply section, 18
...Vacuum pump, 19...Light source housing section, 20...
Light source, 21...Reflector plate% 22...Light transmission window, 23
...Holder, 24゜25...Gas circulation hole for disposal,
26...0 ring seal, 27... strut. Agent Patent Attorney Noriyuki Ken Yudo Matsuyama Mitsuyuki ([No+Higashi (V+1)
Claims (4)
と、この膜形成室の一部に設けられた光導入窓と、前記
膜形成室内に原料ガスを導入する手段と、前記膜形成室
の外部に設けられ、該膜形成室内の被処理基板に前記光
導入窓を通して光を照射する光源を少なくとも具備し、
前記原料ガスを光励起分解して前記被処理基板上に膜を
形成する装置において、前記光導入窓が、内部に冷却用
ガスを流す構造となっていることを特徴とする光励起膜
形成装置。(1) a film formation chamber that accommodates a substrate to be processed and is used for film formation; a light introduction window provided in a part of the film formation chamber; and means for introducing source gas into the film formation chamber; At least a light source provided outside the film forming chamber and irradiating the substrate to be processed in the film forming chamber with light through the light introduction window,
A photoexcited film forming apparatus for forming a film on the substrate to be processed by photoexcited decomposition of the source gas, wherein the light introduction window is configured to allow a cooling gas to flow inside.
ー内部を通って供給され、少なくとも前記膜形成室に流
入しない構造となっていることを特徴とする請求項1記
載の光励起膜形成装置。(2) The photoexcited film forming apparatus according to claim 1, wherein the cooling gas is supplied through the inside of the holder that supports the light transmission window, and has a structure in which it does not flow into at least the film forming chamber. .
なっていることを特徴とする請求項1記載又は、2記載
の光励起膜形成装置。(3) The photoexcited film forming apparatus according to claim 1 or 2, wherein the light transmitting window has a structure that allows it to be easily attached to and detached from the holder.
に前記冷却用ガスを流す構造となっていることを特徴と
する請求項1、2又は3記載の光励起膜形成装置。(4) The photoexcited film forming apparatus according to claim 1, 2 or 3, wherein the light introduction window is composed of two parallel flat plates, and the cooling gas is allowed to flow between them.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6814188A JPH01241818A (en) | 1988-03-24 | 1988-03-24 | Device for forming light excitation film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6814188A JPH01241818A (en) | 1988-03-24 | 1988-03-24 | Device for forming light excitation film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01241818A true JPH01241818A (en) | 1989-09-26 |
Family
ID=13365172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6814188A Pending JPH01241818A (en) | 1988-03-24 | 1988-03-24 | Device for forming light excitation film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01241818A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002053800A3 (en) * | 2001-01-02 | 2002-10-17 | Mattson Thermal Products Inc | Windows used in thermal processing chambers |
JP2008244481A (en) * | 2007-03-23 | 2008-10-09 | Asm Japan Kk | Ultraviolet irradiation apparatus and method having a liquid filter |
-
1988
- 1988-03-24 JP JP6814188A patent/JPH01241818A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002053800A3 (en) * | 2001-01-02 | 2002-10-17 | Mattson Thermal Products Inc | Windows used in thermal processing chambers |
JP2008244481A (en) * | 2007-03-23 | 2008-10-09 | Asm Japan Kk | Ultraviolet irradiation apparatus and method having a liquid filter |
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