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JPH01241138A - Wire bonding of semiconductor device - Google Patents

Wire bonding of semiconductor device

Info

Publication number
JPH01241138A
JPH01241138A JP63068715A JP6871588A JPH01241138A JP H01241138 A JPH01241138 A JP H01241138A JP 63068715 A JP63068715 A JP 63068715A JP 6871588 A JP6871588 A JP 6871588A JP H01241138 A JPH01241138 A JP H01241138A
Authority
JP
Japan
Prior art keywords
wire bonding
inner lead
row
lead row
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63068715A
Other languages
Japanese (ja)
Inventor
Katsuhiko Kaneda
兼田 克彦
Koichi Chiba
宏一 千葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63068715A priority Critical patent/JPH01241138A/en
Publication of JPH01241138A publication Critical patent/JPH01241138A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To conduct uniform wire bonding of each inner lead row, at all times and to remove defective partial wire bonding by applying the temporary lowering of inertia force with the falling of a bonder to dummy wire bonding and previously avoiding its application to wire bonding required. CONSTITUTION:In wire bonding regarding a semiconductor device 1 in which inner lead rows 2, 3 are formed to two opposed sides, the wire bonding of one inner lead row 2 is completed, and dummy wire bonding 3a, 3a0 shaped near the other inner lead row 3 are conducted first. The wire bonding of both inner lead rows 2, 3 is performed under fixed conditions as a whole-that is, under the state in which conditions such as pattern recognition stand-by are kept constant-in order to successively execute the wire bonding of the other inner lead row 3. Accordingly, wire bonding required is attained uniformly at all times regarding each inner lead row 2, 3.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、半導体装置のワイヤボンディング方法に係り
、特に対向する二つの辺にインナーリード列を有する半
導体装置をパターン認識により配線基板上に位置決めし
ながらワイヤボンディングする方法の改良に関する。
[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a wire bonding method for a semiconductor device, and in particular, a method for wire bonding a semiconductor device having inner lead rows on two opposing sides by pattern recognition. The present invention relates to an improvement in a method of wire bonding while positioning on a wiring board.

(従来の技術) 電子機器類の小型化などを目的にフラットパッケージ型
素子(以下FP素子と略称)などの半導体装置を、例え
ばセラミックス配線基板の所定位置に配設ないし実装し
て高密度実装回路を構成する手段が知られている。
(Prior art) For the purpose of downsizing electronic devices, semiconductor devices such as flat package elements (hereinafter referred to as FP elements) are arranged or mounted at predetermined positions on, for example, ceramic wiring boards to create high-density packaging circuits. There are known means for configuring.

すなわちFP素子を、例えばピックアップ先端部で吸引
保持し、そのピックアップをxSy、z軸方向などに駆
動しながら配線基板上に搬送して、例えばテレビカメラ
など用いて基板上の所定位置に対する前記素子の位置決
めを先ず行ない、次いで互いにワイヤボンディングする
インナーリードとリードパターンとの位置決めないし位
置確認を順次行ないながら所要のワイヤボンディングを
している。
That is, the FP element is sucked and held, for example, at the tip of a pickup, and the pickup is transported onto a wiring board while being driven in the xSy, z-axis directions, etc., and the element is positioned at a predetermined position on the board using, for example, a television camera. Positioning is first performed, and then necessary wire bonding is performed while sequentially determining or confirming the positions of the inner leads and lead patterns to be wire-bonded to each other.

(発明が解決しようとする課題) 上記位置決めしながらのワイヤボンディングは量産上有
効な手段であるが、次のような不都合さが往々認められ
る。すなわち対向する二辺にのみ、インナーリード列を
有する半導体装置を配線基板上に各インナーリード列毎
にワイヤボンディングを行なった場合、初めのインナー
リード列については、特に不都合な点はないが後のイン
ナーリード列については最初のインナーリードのワイヤ
ボンディングにおいてボンディング不良が往々起生ずる
(Problems to be Solved by the Invention) Although the above-mentioned wire bonding while positioning is an effective means for mass production, the following inconveniences are often recognized. In other words, when wire bonding is performed for each inner lead row on a wiring board of a semiconductor device having inner lead rows only on two opposing sides, there is no particular disadvantage for the first inner lead row, but for the later Regarding inner lead rows, bonding failures often occur during initial wire bonding of inner leads.

本発明者らはこの点について究明した結果、−方のイン
ナーリード列のワイヤボンディング終了後、次のインナ
ーリード列のワイヤボンディングに移る際のボンダの待
ち時間が影響していることを確認した。つまり上記パタ
ーン認識とワイヤボンディングとの一連の操作における
ボンダ先端の動きは第2図に示す如く待機位置(レベル
)からボンダが降下し、サーチレベルにリードの位置が
確認され、ワイヤ先端のボールが打たれる。つまり通常
は待機レベル−サーチレベル、サーチレベル−基板レベ
ル間の距離Y1をボンダが降下し両者間の合成慣性力で
ワイヤのボールに変形エネルが加えられることになる。
As a result of investigating this point, the inventors of the present invention confirmed that the waiting time of the bonder is affected when moving to wire bonding of the next inner lead row after completing wire bonding of the negative inner lead row. In other words, the movement of the bonder tip during the series of operations of pattern recognition and wire bonding described above is as shown in Figure 2.The bonder descends from the standby position (level), the lead position is confirmed at the search level, and the ball at the wire tip moves. Get hit. That is, normally, the bonder descends the distance Y1 between the standby level and the search level, and between the search level and the substrate level, and deformation energy is applied to the ball of the wire by the combined inertial force between the two.

しかして最初の辺の端子リード列のボンディングにおい
ては、パターン認識のための待ちもほとんど一様でボン
ディングツールによる実効的なボンディング力も一定で
所要のワイヤボンディングが行なわれる。しかし一方の
インナーリード列から対向する辺の他のインナーリード
列側にボンダが移動するときは、サーチ位置から反対側
の端子リード列の位置まで移動(A)するため、この間
ボンダはサーチレベルで一旦停止することになる。
In bonding the terminal lead row on the first side, the waiting time for pattern recognition is almost uniform, the effective bonding force by the bonding tool is also constant, and the required wire bonding is performed. However, when the bonder moves from one inner lead row to the other inner lead row on the opposite side, it moves from the search position to the position of the terminal lead row on the opposite side (A), so during this time the bonder is at the search level. It will be stopped for a while.

従って後の辺(反対側の辺)の端子リード列における最
初のボンディングのときはY2の距離しかボンダは降下
しないことになり前記慣性力も相対的に低下するため、
移行したインナーリード列の最初のインナーリードにつ
いてのワイヤボンディングには不良を生じ易くなると言
える。
Therefore, during the first bonding on the terminal lead row on the later side (opposite side), the bonder will only descend by a distance of Y2, and the inertial force will also be relatively reduced.
It can be said that defects are likely to occur in wire bonding for the first inner lead of the transferred inner lead row.

従って、本発明は対向する二つの辺にのみインナーリー
ド列を備えた半導体装置について、インナーリード列を
パターン認識しながら、配線基板上の対応するリードパ
ターンと確実にワイヤボンディングする方法を提供する
Therefore, the present invention provides a method for reliably wire-bonding a semiconductor device having inner lead rows only on two opposing sides to corresponding lead patterns on a wiring board while recognizing the pattern of the inner lead rows.

[発明の構成] (課題を解決するための手段) 本発明は、対向する二つの辺にのみインナーリード列を
有する半導体装置をその半導体装置のインナーリード列
に対応するリードパターンが設けられた配線基板にパタ
ーン認識によって位置決めしながら前記二つの辺のイン
ナーリード列毎に順次ワイヤボンディングするに当って
、後からワイヤボンディングするインナーリード列中最
初にワイヤボンディングするインナーリード列近傍にダ
ミーのワイヤボンディング手段を介在させ、後のインナ
ーリード列のワイヤボンディングを、前記ダミーのワイ
ヤボンディングに引続いて行なうことを骨子とする。
[Structure of the Invention] (Means for Solving the Problems) The present invention provides a semiconductor device having inner lead rows only on two opposing sides, and a wiring line provided with lead patterns corresponding to the inner lead rows of the semiconductor device. When wire bonding is performed sequentially for each inner lead row on the two sides while positioning on the substrate by pattern recognition, a dummy wire bonding means is provided near the inner lead row to be wire-bonded first among the inner lead rows to be wire-bonded later. The main point is to perform wire bonding of the later inner lead rows subsequent to the dummy wire bonding.

(作 用) 本発明によれば対向する二つの辺にインナーリード列を
有する半導体装置についてのワイヤボンディングにおい
て、一方のインナーリード列のワイヤボンディング終了
後、他方のインナーリード列近傍に設けたダミーのワイ
ヤボンディングを先ず行なう。しかして引続いて他方の
インナーリード列のワイヤボンディングを行なうため、
全体的に一定の条件で、つまりパターン認識待ちなどの
条件を一定にした状態で両インナーリード列のワイヤボ
ンディングが行なわれることになる。従って前記各イン
ナーリード列については常に一様に所要のワイヤボンデ
ィングが達成される。
(Function) According to the present invention, in wire bonding of a semiconductor device having inner lead rows on two opposing sides, after wire bonding of one inner lead row is completed, a dummy wire provided near the other inner lead row is attached. Wire bonding is performed first. However, since wire bonding is subsequently performed on the other inner lead row,
Wire bonding of both inner lead rows is performed under generally constant conditions, that is, under conditions such as waiting for pattern recognition to be constant. Therefore, the required wire bonding is always uniformly achieved for each inner lead row.

(実施例) 以下第1図を参照して本発明の詳細な説明する。(Example) The present invention will be described in detail below with reference to FIG.

先ず所要のワイヤボンディングを施す半導体装置、つま
り対向する二つの辺にのみインナーリード列を備えた半
導体チップあるいはFP素子を用意する。しかしてこれ
ら半導体チップ1について、後でワイヤボンディングを
施す側のインナーリ一ド列3のうち最初にワイヤボンデ
ィングを行なう予定のインナーリード31の近傍にダミ
ーのインナーリード3oを設けておく。次いでこの半導
体チップ1を対応するリード列2 a s 3 aを有
する配線基板ないしリードフレーム4上に載置する。
First, a semiconductor device to be subjected to the required wire bonding, that is, a semiconductor chip or FP element having inner lead rows only on two opposing sides is prepared. For these semiconductor chips 1, dummy inner leads 3o are provided in the vicinity of the inner leads 31 to which wire bonding will be performed first in the inner lead row 3 on the side to which wire bonding will be performed later. Next, this semiconductor chip 1 is placed on a wiring board or lead frame 4 having corresponding lead rows 2a, s, and 3a.

この場合配線基板ないしリードフレーム4上にも前記ダ
ミーのインナーリード3oに対応するリード部3aoを
設けておく。この状態において所要のワイヤボンディン
グ装置を用いワイヤボンディングを行なう。先ず半導体
チップ1の一方の辺側に形設しであるインナーリード列
2について順次インナーリードと対応するリード列2a
のリードとをワイヤボンディングする。このインナーリ
ード列2についてのワイヤボンディングが終了した時点
で、ワイヤボンディング操作は半導体チップ1の対向す
る他の辺側のインナーリード列3側のワイヤボンディン
グに移行する。ここでボンダがインナーリード列3側に
移行した時点で先ずダミーのインナーリード列3oとこ
のダミーインナーリード3oに対向するダミーのリード
3aoとのワイヤボンディングを行なってからインナー
リード31とリード3a1とのワイヤボンディングを手
始めに順次インナーリード列3についてのワイヤボンデ
ィングを行なう。つまり反対側の辺のインナーリード列
3についてのワイヤボンディングに先立ってそのインナ
ーリード列3中最初にワイヤボンディングするインナー
リード31のワイヤボンディングはその近傍におけるダ
ミーのワイヤボンディングに引き続いて行ない所要のワ
イヤボンディングが達成される。
In this case, lead portions 3ao corresponding to the dummy inner leads 3o are also provided on the wiring board or lead frame 4. In this state, wire bonding is performed using a required wire bonding device. First, regarding the inner lead row 2 formed on one side of the semiconductor chip 1, the lead row 2a corresponding to the inner lead is sequentially formed.
Wire bond the leads. When the wire bonding for the inner lead row 2 is completed, the wire bonding operation shifts to the wire bonding for the inner lead row 3 on the other opposing side of the semiconductor chip 1. Here, when the bonder moves to the inner lead row 3 side, first wire bonding is performed between the dummy inner lead row 3o and the dummy lead 3ao opposite to this dummy inner lead 3o, and then wire bonding is performed between the inner lead 31 and the lead 3a1. Starting with wire bonding, wire bonding is performed for the inner lead row 3 in sequence. That is, prior to wire bonding for the inner lead row 3 on the opposite side, the wire bonding of the inner lead 31 that is wire bonded first in the inner lead row 3 is performed following the dummy wire bonding in the vicinity thereof, and the necessary wire bonding is performed. is achieved.

[発明の効果] 以上説明のように、対向する二つの辺にのみインナーリ
ード列をそれぞれ有する半導体装置(素子)のワイヤボ
ンディングにおいて、本発明方法によれば一方のインナ
ーリード列についてのワイヤボンディングを終了し、他
方のインナーリード列についてのワイヤボンディング移
行に当りダミーのワイヤボンディングを特に介在させる
。しかして上記ワイヤボンディングにおける一方のイン
ナーリード列側から他方のインナーリード列側へのボン
ダの移動に伴なう過渡的な条件変化つまり、ボンダの下
降に伴なう慣性力の一時的な低下をダミーのワイヤボン
ディングに用い所要(正規)のワイヤボンディングへの
適用を予め回避する。このため各インナーリード列につ
いてのワイヤボンディングは予め設定した条件で常に一
様に行なわれるため部分的なワイヤボンディング不良の
問題は除去され、製品の信頼性向上をもちらす。
[Effects of the Invention] As explained above, in the wire bonding of a semiconductor device (element) having inner lead rows only on two opposing sides, the method of the present invention makes it possible to perform wire bonding on one inner lead row. When the wire bonding is completed and the wire bonding is transferred to the other inner lead row, dummy wire bonding is especially interposed. However, in wire bonding, the transient condition change that occurs when the bonder moves from one inner lead row side to the other inner lead row side, that is, the temporary decrease in inertia force that occurs when the bonder descends, can be avoided. Used for dummy wire bonding to avoid application to required (regular) wire bonding. Therefore, wire bonding for each inner lead row is always uniformly performed under preset conditions, eliminating the problem of partial wire bonding failures and improving product reliability.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明方法の実施態様を説明するための平面図
、第2図はワイヤボンディング操作におけるボンダの位
置関係を示す曲線図である。 1・・・・・・半導体装置 2.3 ・・・・・・インナーリード列 as 3a ・・・・・・リードパターン列 3os3a。 ・・・・・・ダミーワイヤボンディング部4・・・・・
・配線基板 a 第1図 時 間 □ 第2図
FIG. 1 is a plan view for explaining an embodiment of the method of the present invention, and FIG. 2 is a curve diagram showing the positional relationship of bonders in a wire bonding operation. 1...Semiconductor device 2.3...Inner lead row as3a...Lead pattern row 3os3a. ...Dummy wire bonding part 4...
・Wiring board a Figure 1 Time □ Figure 2

Claims (1)

【特許請求の範囲】[Claims]  対向する二つの辺にのみインナーリード列を有する半
導体装置を前記半導体装置のインナーリード列に対応す
るリードパターンが設けられた配線基板にパターン認識
によって位置決めしながら前記二つの辺のリード列毎に
順次ワイヤボンディングするに当って、後からワイヤボ
ンディングするインナーリード列のうち最初にワイヤボ
ンディングするインナーリード列の近傍に予めダミーの
ワイヤボンディング部を設けておき、初めのインナーリ
ード列のワイヤボンディング終了後前記ダミーのワイヤ
ボンディング部のワイヤボンディングを行ない引続いて
後のインナーリード列についてワイヤボンディングを行
なうことを特徴とする半導体装置のワイヤボンディング
方法。
While positioning a semiconductor device having inner lead rows only on two opposing sides on a wiring board provided with a lead pattern corresponding to the inner lead rows of the semiconductor device by pattern recognition, sequentially for each lead row on the two sides. When performing wire bonding, a dummy wire bonding section is provided in advance near the inner lead row to be wire-bonded first among the inner lead rows to be wire-bonded later, and after the wire bonding of the first inner lead row is completed, the A wire bonding method for a semiconductor device, characterized in that wire bonding is performed on a dummy wire bonding section, and then wire bonding is performed on a subsequent inner lead row.
JP63068715A 1988-03-23 1988-03-23 Wire bonding of semiconductor device Pending JPH01241138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63068715A JPH01241138A (en) 1988-03-23 1988-03-23 Wire bonding of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63068715A JPH01241138A (en) 1988-03-23 1988-03-23 Wire bonding of semiconductor device

Publications (1)

Publication Number Publication Date
JPH01241138A true JPH01241138A (en) 1989-09-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP63068715A Pending JPH01241138A (en) 1988-03-23 1988-03-23 Wire bonding of semiconductor device

Country Status (1)

Country Link
JP (1) JPH01241138A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005184009A (en) * 2003-12-23 2005-07-07 Samsung Electronics Co Ltd Wire bonding apparatus and method for wire clamping, automatic ball forming method, and wire bonding part
JP2008251668A (en) * 2007-03-29 2008-10-16 Suzuka Fuji Xerox Co Ltd Wire bonding method and manufacturing method for led print head base
US7544885B2 (en) * 2005-06-21 2009-06-09 Chin-Hsing Horng Isolating cover

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005184009A (en) * 2003-12-23 2005-07-07 Samsung Electronics Co Ltd Wire bonding apparatus and method for wire clamping, automatic ball forming method, and wire bonding part
US7544885B2 (en) * 2005-06-21 2009-06-09 Chin-Hsing Horng Isolating cover
JP2008251668A (en) * 2007-03-29 2008-10-16 Suzuka Fuji Xerox Co Ltd Wire bonding method and manufacturing method for led print head base

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