JPH01199458A - Lead frame for photosensitive semiconductor element and photosensitive semiconductor package - Google Patents
Lead frame for photosensitive semiconductor element and photosensitive semiconductor packageInfo
- Publication number
- JPH01199458A JPH01199458A JP63024684A JP2468488A JPH01199458A JP H01199458 A JPH01199458 A JP H01199458A JP 63024684 A JP63024684 A JP 63024684A JP 2468488 A JP2468488 A JP 2468488A JP H01199458 A JPH01199458 A JP H01199458A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive semiconductor
- light
- lead frame
- lead
- inner leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000011347 resin Substances 0.000 abstract description 15
- 229920005989 resin Polymers 0.000 abstract description 15
- 238000007789 sealing Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000004873 anchoring Methods 0.000 abstract 4
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000001721 transfer moulding Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、固体撮像素子、ＥＰＲＯＭなどの光等のエネ
ルギーで状態が変化する半導体素子のレジン封止用リー
ドフレームの構造および半導体パッケージに関するもの
である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a lead frame structure and semiconductor package for resin sealing of semiconductor elements such as solid-state image sensors and EPROMs whose state changes with energy such as light. It is.
Ｃ従来の技術）
現在、半導体素子の組立て用部材として用いられている
リードフレームは、導電性が良く、かつ強度の大きい金
属材料を用いて製造されており、使用される金属材料は
、コバール、４２合金、銅系合金などがある。これらの
金属材料を用いて、複数のインナーリード及びそれぞれ
から延長形成される複数のアウターリードとダイ・アタ
ッチ（半導体素子取付部）をホトエツチング法、スタン
ピング法などにより一体形成している。これらホトエツ
チング法、スタンピング法などにより、製造されたリー
ドフレームは、インナーリード部及びグイ・アタッチ部
に金、銀などの貴金属がメンキされている。インナーリ
ード部及びグイ・アタッチ部を有するリードフレームは
、レジン封止用のリードフレームであり、セラミック封
止用のリードフレームには、グイ・アタッチ部がない。C. Prior Art) Lead frames currently used as members for assembling semiconductor devices are manufactured using metal materials with good conductivity and high strength, and the metal materials used include Kovar, Kovar, 42 alloy, copper-based alloy, etc. Using these metal materials, a plurality of inner leads, a plurality of outer leads extending from each lead, and a die attach (semiconductor element mounting portion) are integrally formed by a photoetching method, a stamping method, or the like. Lead frames manufactured by these photo-etching methods, stamping methods, etc. have noble metals such as gold and silver coated on the inner lead portions and the guide attachment portions. A lead frame having an inner lead portion and a goo attaching portion is a lead frame for resin sealing, and a lead frame for ceramic sealing does not have a goo attaching portion.
従来より、固体撮像素子、ＥＰＲＯＭのような光感応型
半導体素子の組立ては、セラミック封止がおこなわれて
おり、セラミック基板上に光感応型半導体素子を銀ペー
ストなどを用いてダイボンディングし、パッド（外部電
極導出部）とインナーリードは、金、アルミなどの金属
細線を用いてワイヤーボンディングをおこなっていた。Conventionally, photosensitive semiconductor devices such as solid-state image sensors and EPROMs have been assembled using ceramic sealing, in which the photosensitive semiconductor device is die-bonded onto a ceramic substrate using silver paste, etc. (external electrode lead-out part) and inner leads were wire bonded using thin metal wires such as gold or aluminum.
そして、受光部が透光性の材料でできた窓を有するキャ
ップを低融点ガラスなどを用いてセラミック基板と融着
させて中空型セラミックパッケージを構成している。A hollow ceramic package is constructed by fusing a cap with a window in which the light receiving portion is made of a light-transmitting material to a ceramic substrate using low-melting glass or the like.
ところが、このような中空型セラミックパッケージは、
高価格であるという問題がある。However, such hollow ceramic packages,
The problem is that it is expensive.
そこで、低価格化のためにレジン封止型の光感応型半導
体素子のパンケージが開発された。これを第７図により
説明すると、レジン封止用のリードフレーム４１を用い
て、グイ・アタッチ部４２に光感応型半導体素子４３を
銀ペーストなどを用いてグイボンディングをおこない、
次にパッドとインナーリード４１ａをワイヤーボンディ
ングし、半導体素子外周部に接着剤４４を塗布し、透光
性のキャップ４５をかぶせ、その後トランスファーモー
ルドなどの方法により樹脂封止をおこなう。Therefore, in order to reduce the cost, a resin-sealed photosensitive semiconductor element pancage was developed. To explain this with reference to FIG. 7, using a lead frame 41 for resin sealing, a photosensitive semiconductor element 43 is bonded to a glue attachment part 42 using silver paste or the like,
Next, the pad and the inner lead 41a are wire-bonded, an adhesive 44 is applied to the outer periphery of the semiconductor element, a translucent cap 45 is placed on the semiconductor element, and resin sealing is then performed by a method such as transfer molding.
接着剤４４は、封止樹脂４６が受光部に侵入するのを防
止している。The adhesive 44 prevents the sealing resin 46 from entering the light receiving section.
上記従来のレジン封止型の光感応型半導体素子のパンケ
ージにおいては、光感応型半導体素子４３は、樹脂４６
で全体を鋳包まれており、信輔性に問題が生じている。In the conventional resin-sealed photosensitive semiconductor element pancase described above, the photosensitive semiconductor element 43 has a resin 46
The whole thing has been wrapped up, and there is a problem with its credibility.
また、受光部上をおおう透光性のキャップ４５は、光感
応型半導体素子４３と接着剤４４で固定されているが、
モールド樹脂４６の温度、圧力により、受光部に封止用
樹脂４６が侵入してくるなどの問題を有している。Furthermore, the light-transmitting cap 45 covering the light receiving section is fixed to the photosensitive semiconductor element 43 with an adhesive 44.
There are problems such as the sealing resin 46 entering the light receiving section due to the temperature and pressure of the molding resin 46.
この問題を解決するために、本出願人は既に特願昭６２
−２１３９９８号を出願している。これを第８図および
第９図により説明する。In order to solve this problem, the applicant has already filed a patent application in 1982.
-213998 has been filed. This will be explained with reference to FIGS. 8 and 9.
すなわち、リードフレーム５１のインナーリード部５１
ａ先端には、銀めっき５１ｂが施され、一方、グイ・ア
タッチ部５２は、リードフレーム５１のインナーリード
部５１ａをはめこむための凹部５２ａが形成されている
。また、インナーリード部５１ａの高さとグイ・アタッ
チ部５２の凹部５２ａの深さは同一であり、インナーリ
ード部５１ａを凹部５２ａにはめこんだときにその表面
が同一になるように形成されている。そして、インナー
リード５１ａと凹部５２ａを嵌め込み一体成形し、グイ
・アタッチ部５２に光感応型半導体５４をグイボンディ
ングし、インナーリード部５１ａと半導体５４をワイヤ
ーボンディングにて接続する。続いて透光性キャップ５
３をグイ・アタッチ部５２の周囲と接着し、全体をトラ
ンスファーモールドにより樹脂５５にて樹脂封止を行う
ものである。That is, the inner lead portion 51 of the lead frame 51
The tip a is plated with silver 51b, and the goo attaching portion 52 is formed with a recess 52a into which the inner lead portion 51a of the lead frame 51 is fitted. Further, the height of the inner lead part 51a and the depth of the recess 52a of the guide attachment part 52 are the same, and the inner lead part 51a is formed so that its surface becomes the same when it is fitted into the recess 52a. . Then, the inner lead 51a and the recess 52a are fitted and integrally molded, the photosensitive semiconductor 54 is bonded to the glue attachment part 52, and the inner lead part 51a and the semiconductor 54 are connected by wire bonding. Next, transparent cap 5
3 is adhered to the periphery of the goo attaching portion 52, and the whole is sealed with resin 55 by transfer molding.
しかしながら、上記半導体パフケージにおいては、グイ
・アタッチ部５２の周囲固着部が、インナーリード５１
ａの上面と同一高さであるため、透光性キャップ５３を
凹字形の形状としなければならないという問題を有して
いる。However, in the semiconductor puff cage described above, the peripheral fixing portion of the guide attachment portion 52 is attached to the inner lead 51.
Since it is at the same height as the upper surface of a, there is a problem in that the translucent cap 53 must have a concave shape.
本発明の課題は上記問題を解決するものであって、平板
状の透光性キャップを使用できると共に、高信顛性でか
つ、受光部に封止樹脂の侵入のない光感応型半導体素子
用リードフレームを提供することを目的とする。An object of the present invention is to solve the above-mentioned problems, and is capable of using a flat transparent cap, and is highly reliable and does not allow sealing resin to enter the light-receiving area. The purpose is to provide lead frames.
そのために本発明の光感応型半導体素子用リードフレー
ムは、光感応型半導体素子の外部電極導出部と選択的に
接続される複数のインナーリードと、該インナーリード
の一方の面に固定される光感応型半導体素子取付部であ
るグイ・アタッチ部と、インナーリードの他方の面に固
定される透光性キャップ固着用基台とを有し、該透光性
キャップ固着用基台に形成された凹部に前記インナーリ
ードを嵌め込むことを特徴とし、また、本発明のレジン
封止型の光感応型半導体素子のパンケージは、光感応型
半導体素子の外部電極導出部と選択的に接続される複数
のインナーリードと、該インナーリードの一方の面に固
定される光感応型半導体素子取付部であるグイ・アタッ
チ部と、インナーリードの他方の面に固定される透光性
キャップ固着用基台とを有し、該透光性キャップ固着用
基台に形成された凹部に前記インナーリードを嵌め込む
と共に、前記透光性キャップ固着用基台に平板の透光性
ヰ十ツブが固定されることを特徴とするものである。To this end, the lead frame for a photosensitive semiconductor device of the present invention includes a plurality of inner leads that are selectively connected to external electrode lead-out portions of the photosensitive semiconductor device, and a light source fixed to one surface of the inner lead. It has a goo attaching part which is a sensitive semiconductor element mounting part and a base for fixing a translucent cap fixed to the other surface of the inner lead, and a base for fixing a translucent cap is formed on the base for fixing the translucent cap. The pancage of the resin-sealed photosensitive semiconductor device of the present invention is characterized in that the inner lead is fitted into the recess, and the pancage of the resin-sealed photosensitive semiconductor device has a plurality of holes selectively connected to the external electrode lead-out portion of the photosensitive semiconductor device. an inner lead, a gui attachment part which is a photosensitive semiconductor element mounting part fixed to one surface of the inner lead, and a base for fixing a translucent cap fixed to the other surface of the inner lead. and the inner lead is fitted into a recess formed in the base for fixing the translucent cap, and a flat translucent tab is fixed to the base for fixing the translucent cap. It is characterized by:
本発明においては例えば第１図および第６図に示すよう
に、リードフレーム１５のグイ・アタッチ部１２に光感
応型半導体素子１６をグイボンディングし、インナーリ
ードｌｌａと半導体素子１６をワイヤーボンディングに
て接続する。続いて透光性材料からなる平板の透光性キ
ャップ１７を透光性キャップ固着用基台１３に接着し、
全体をトランスファーモールドなどの方法により樹脂１
８にて樹脂封止を行うものである。これにより、光感応
型半導体素子１６は、透光性キャップ１７とグイ・アタ
ッチ部１２で形成される中空部１９で気密封止されるこ
とになる。In the present invention, for example, as shown in FIGS. 1 and 6, the photosensitive semiconductor element 16 is bonded to the lead attachment part 12 of the lead frame 15, and the inner lead lla and the semiconductor element 16 are bonded by wire bonding. Connecting. Next, a flat transparent cap 17 made of a transparent material is adhered to the base 13 for fixing the transparent cap,
The entire body is molded with resin 1 using methods such as transfer molding.
At step 8, resin sealing is performed. Thereby, the photosensitive semiconductor element 16 is hermetically sealed in the hollow part 19 formed by the transparent cap 17 and the gouey attachment part 12.
以下、図面を参照しつつ本発明の実施例について説明す
る。第１図は本発明の光感応型半導体素子用リードフレ
ームの１実施例を示し、（イ）は平面図、（ロ）は断面
図、第２図は第１図のリードフレームの斜視図、第３図
、第４図および第５図は本発明の光感応型半導体素子用
リードフレームを構成する部材のＩ実施例を示し、（イ
）は平面図、（ロ）は断面図、第６図は本発明の半導体
パンケージの１実施例を示す断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows one embodiment of the lead frame for a photosensitive semiconductor element of the present invention, (A) is a plan view, (B) is a sectional view, and FIG. 2 is a perspective view of the lead frame of FIG. 1. 3, 4, and 5 show an embodiment of a member constituting a lead frame for a photosensitive semiconductor device according to the present invention, in which (a) is a plan view, (b) is a sectional view, and (b) is a sectional view. The figure is a sectional view showing one embodiment of the semiconductor pancage of the present invention.
第３図において、１１は銅系合金製のグイ・アタッチ部
のないリードフレーム本体であり、このリードフレーム
本体１１のインナーリードｌｌａ先端には、銀めっきｌ
ｌｂが施されている。第４図はグイ・アタッチ部１２を
示し、ガラスエポキシ積層板製の平板からなる。第５図
は透光性キャップ固着用基台１３を示し、第３図のリー
ドフレーム本体１１のインナーリードｌｌａを嵌め込む
ための凹部１３ａが形成されている。この実施例の場合
、透光性キャップ固着用基台１３の内周側に切り込み１
３ｂを形成し、インナーリード１１ａのボンディング面
を広くさせているが、切り込み１３ｂはなくてもよい。In FIG. 3, reference numeral 11 is a lead frame body made of a copper alloy without a guide attachment part, and the tips of the inner leads lla of this lead frame body 11 are plated with silver.
lb has been applied. FIG. 4 shows the goo attaching part 12, which consists of a flat plate made of a glass epoxy laminate. FIG. 5 shows a translucent cap fixing base 13, in which a recess 13a is formed into which the inner lead lla of the lead frame main body 11 of FIG. 3 is fitted. In the case of this embodiment, a cut 1 is made on the inner circumferential side of the base 13 for fixing the translucent cap.
Although the notch 13b is formed to widen the bonding surface of the inner lead 11a, the notch 13b may not be provided.
第１図および第２図は上記リードフレーム本体１１にグ
イ・アタッチ部１２および透光性キャップ固着用基台１
３を嵌め込み接着成形したリードフレームＩ５の平面図
と斜視図を示している。FIGS. 1 and 2 show the lead frame body 11, the guide attachment part 12 and the base 1 for fixing the translucent cap.
3 shows a plan view and a perspective view of a lead frame I5 in which the lead frame I5 is fitted and adhesively molded.
次に第６図により上記構成から成るリードフレーム１３
を用いた半導体素子の封止構造について説明する。本発
明によるリードフレーム１５のグイ・アタッチ部１２に
光感応型半導体素子１６をグイボンディングし、インナ
ーリードｌｌａと半導体素子１６をワイヤーボンディン
グにて接続する。続いて透光性材料からなる平板の透光
性キャップ１７を透光性キャップ固着用基台１３に接着
し、全体をトランスファーモールドなどの方法により樹
脂１８にて樹脂封止を行うものである。これにより、光
感応型半導体素子１６は、透光性キャップ１７とグイ・
アタッチ部１２で形成される中空部１９で気密封止され
ることになる。Next, as shown in FIG. 6, the lead frame 13 having the above structure is
A sealing structure for a semiconductor device using the following will be explained. The photosensitive semiconductor device 16 is bonded to the bond attachment portion 12 of the lead frame 15 according to the present invention, and the inner lead lla and the semiconductor device 16 are connected by wire bonding. Subsequently, a flat transparent cap 17 made of a transparent material is adhered to the transparent cap fixing base 13, and the whole is sealed with resin 18 by a method such as transfer molding. As a result, the photosensitive semiconductor element 16 and the transparent cap 17 are connected to each other.
The hollow part 19 formed by the attaching part 12 is hermetically sealed.
以上説明したように本発明によれば、光感応型半導体素
子の外部電極導出部と選択的に接続される複数のインナ
ーリードと、該インナーリードの一方の面に固定される
光感応型半導体素子取付部であるグイ・アタッチ部と、
インナーリードの他方の面に固定される透光性キャップ
固着用基台とを有し、該透光性キャップ固着用基台には
前記インナーリードに嵌め込まれる凹部が形成されるた
め、透光性キャップとして平板のものを使用できる。透
光性キャップとして平板のものを使用することによって
凹字形の透光性キャップを使用するよりも低コストであ
ると同時に凹字形の透光性キャフプよりも、固着時の位
置精度の許容範囲が大きくとれる。また凹字形の透光性
キャップでは透光性キャップ側面よりの余分な光の入射
が考えられるが、平板の場合はない、これによって従来
の中空型セラミック封止型のバフケージと同様に光感応
型半導体素子を気密封止できる。As explained above, according to the present invention, a plurality of inner leads are selectively connected to external electrode lead-out portions of a photosensitive semiconductor element, and a photosensitive semiconductor element is fixed to one surface of the inner leads. Gui attach part which is the mounting part,
A translucent cap fixing base is fixed to the other surface of the inner lead, and the translucent cap fixing base is formed with a recess into which the inner lead is fitted. A flat plate can be used as a cap. By using a flat plate as the light-transmitting cap, the cost is lower than using a concave-shaped light-transmitting cap, and at the same time, the allowable range of positional accuracy when fixed is lower than that of a concave-shaped light-transmitting cap. It can be taken in large quantities. In addition, with a concave shaped translucent cap, it is possible that extra light may enter from the side of the translucent cap, but this is not the case with a flat plate. Semiconductor elements can be hermetically sealed.
また、全体の形状は、トランスファーモールド成形でき
るので、中空型セラミック封止パッケージと同等の信転
性をもち、かつ低価格の光感応型半導体装置を提供でき
る。Further, since the overall shape can be formed by transfer molding, it is possible to provide a low-cost photosensitive semiconductor device that has reliability equivalent to that of a hollow ceramic sealed package.
第１図は本発明の光感応型半導体素子用リードフレーム
の１実施例を示し、（イ）は平面図、（ロ）は断面図、
第２図は第１図のリードフレームの斜視図、第３図、第
４図および第５図は本発明の光感応型半導体素子用リー
ドフレームを構成する部材の１実施例を示し、（イ）は
平面図、（ロ）は断面図、第６図は本発明の半導体パン
ケージの１実施例を示すの断面図、第７図は従来の半導
体パッケージの断面図、第８図は従来のり一ドフレーム
を示し、（イ）は平面図、（ロ）は断面図、第９図は第
８図のリードフレームを用いた半導体パンケージの断面
図である。
１１・・・リードフレーム本体１．１１ａ・・・インナ
ーリード、１２・・・グイ・アタッチ部、１３・・・透
光性キャップ固着用基台、１３ａ・・・凹部、１５・・
・リードフレーム、１７・・・透光性キャップ、１８・
・・樹脂。
出 願 人 大日本印刷株式会社
代理人弁理士 白 井 博 樹（外４名）第１図
第２図
第３図
（イ）
第４図
第５図
（イ）
第６図
第７図
第８図
（イ）
第９図FIG. 1 shows one embodiment of the lead frame for a photosensitive semiconductor element of the present invention, in which (a) is a plan view, (b) is a cross-sectional view,
FIG. 2 is a perspective view of the lead frame of FIG. 1, and FIGS. 3, 4, and 5 show an embodiment of the members constituting the lead frame for a photosensitive semiconductor element of the present invention. ) is a plan view, (b) is a cross-sectional view, FIG. 6 is a cross-sectional view showing one embodiment of the semiconductor package of the present invention, FIG. 7 is a cross-sectional view of a conventional semiconductor package, and FIG. 8 is a cross-sectional view of a conventional semiconductor package. 9A is a plan view, FIG. 9 is a cross-sectional view, and FIG. 9 is a cross-sectional view of a semiconductor pancake using the lead frame of FIG. 8. DESCRIPTION OF SYMBOLS 11... Lead frame main body 1.11a... Inner lead, 12... Gui attachment part, 13... Translucent cap fixing base, 13a... Recessed part, 15...
・Lead frame, 17...Translucent cap, 18・
··resin. Applicant Dai Nippon Printing Co., Ltd. Representative Patent Attorney Hiroki Shirai (4 others) Figure 1 Figure 2 Figure 3 (A) Figure 4 Figure 5 (A) Figure 6 Figure 7 Figure 8 Figure (a) Figure 9
Claims (2)
接続される複数のインナーリードと、該インナーリード
の一方の面に固定される光感応型半導体素子取付部であ
るダイ・アタッチ部と、インナーリードの他方の面に固
定される透光性キャップ固着用基台とを有し、該透光性
キャップ固着用基台に形成された凹部に前記インナーリ
ードを嵌め込むことを特徴とする光感応型半導体素子用
リードフレーム。(1) A plurality of inner leads that are selectively connected to the external electrode lead-out portions of the photosensitive semiconductor device, and a die attach portion that is a photosensitive semiconductor device mounting portion that is fixed to one surface of the inner leads. and a translucent cap fixing base fixed to the other surface of the inner lead, and the inner lead is fitted into a recess formed in the translucent cap fixing base. Lead frame for photosensitive semiconductor devices.
において、光感応型半導体素子の外部電極導出部と選択
的に接続される複数のインナーリードと、該インナーリ
ードの一方の面に固定される光感応型半導体素子取付部
であるダイ・アタッチ部と、インナーリードの他方の面
に固定される透光性キャップ固着用基台とを有し、該透
光性キャップ固着用基台に形成された凹部に前記インナ
ーリードを嵌め込むと共に、前記透光性キャップ固着用
基台に平板の透光性キャップが固定されることを特徴と
する光感応型半導体パッケージ。(2) In a resin-sealed photosensitive semiconductor device package, a plurality of inner leads are selectively connected to external electrode lead-out portions of the photosensitive semiconductor device, and a plurality of inner leads are fixed to one surface of the inner leads. It has a die attach part which is a light-sensitive semiconductor element mounting part, and a base for fixing a light-transmitting cap fixed to the other surface of the inner lead, and a base for fixing a light-transparent cap is formed on the base for fixing a light-transparent cap. A photosensitive semiconductor package, wherein the inner lead is fitted into the recessed portion, and a flat transparent cap is fixed to the base for fixing the transparent cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63024684A JPH01199458A (en) | 1988-02-03 | 1988-02-03 | Lead frame for photosensitive semiconductor element and photosensitive semiconductor package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63024684A JPH01199458A (en) | 1988-02-03 | 1988-02-03 | Lead frame for photosensitive semiconductor element and photosensitive semiconductor package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01199458A true JPH01199458A (en) | 1989-08-10 |
Family
ID=12144983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63024684A Pending JPH01199458A (en) | 1988-02-03 | 1988-02-03 | Lead frame for photosensitive semiconductor element and photosensitive semiconductor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01199458A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121278A (en) * | 2004-10-20 | 2006-05-11 | Matsushita Electric Ind Co Ltd | Antenna device and communication system using the same |
-
1988
- 1988-02-03 JP JP63024684A patent/JPH01199458A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121278A (en) * | 2004-10-20 | 2006-05-11 | Matsushita Electric Ind Co Ltd | Antenna device and communication system using the same |
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