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JPH01189222A - Signal delaying circuit - Google Patents

Signal delaying circuit

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Publication number
JPH01189222A
JPH01189222A JP63012928A JP1292888A JPH01189222A JP H01189222 A JPH01189222 A JP H01189222A JP 63012928 A JP63012928 A JP 63012928A JP 1292888 A JP1292888 A JP 1292888A JP H01189222 A JPH01189222 A JP H01189222A
Authority
JP
Japan
Prior art keywords
circuit
design
mask
opening
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63012928A
Other languages
Japanese (ja)
Other versions
JP2808594B2 (en
Inventor
Shiroji Shoren
城二 勝連
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63012928A priority Critical patent/JP2808594B2/en
Publication of JPH01189222A publication Critical patent/JPH01189222A/en
Application granted granted Critical
Publication of JP2808594B2 publication Critical patent/JP2808594B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Pulse Circuits (AREA)

Abstract

PURPOSE:To cause a design change to be efficient by preparing the number of stages of an inverter circuit on a layout in consideration for the accuracy of the design and the dispersion of a process parameter, etc., beforehand, and correcting a mask to connect the output of the inverter circuit and an external wiring. CONSTITUTION:The title circuit is composed of plural inverter circuits 3 to be connected in series, and the position of an opening 1 for a connection on the wiring to obtain an output signal 5 in an initial design is made into an electric connecting point. On the other hand, when, in a real device, the delaying quantity of the output signal 5 to an input signal 4 is measured, a value is made larger than a designed value and that the design change is needed is known, it is sufficient that a mask for a contact is corrected so as to be made into the optimum correction position of the opening for the connection for obtaining a delay time DELTAt on the design, for example, the opening for the connection indicated by 2. Respective inverter circuits in the signal delaying circuit composed of plural inverter circuits do not necessarily need to use equal circuits, equal transistors, etc.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体集積回路装置における信号遅延回路に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a signal delay circuit in a semiconductor integrated circuit device.

従来の技術 第3図は、ある入力波形の正転の信号遅延回路をインバ
ータ回路によシ構成したもので、第3図(&)には遅延
時間Δtで正転の遅延信号a0を得ることを目的に初期
設計された遅延回路を示したものである。
Conventional technology Fig. 3 shows a configuration in which a signal delay circuit for normal rotation of a certain input waveform is configured with an inverter circuit. This figure shows a delay circuit that was initially designed for this purpose.

入力波形a の遅延信号a0に対する遅延時間Δtの初
期設計値は、実際に、デバイスとして製造された後にそ
の遅延時間を測定するとΔtとなシ初期設計における目
標とする設定値Δtとしばしば異なる場合が生じる。
The initial design value of the delay time Δt for the delayed signal a0 of the input waveform a is actually Δt when the delay time is measured after being manufactured as a device, and is often different from the target setting value Δt in the initial design. arise.

この初期設計の段階での値とデバイス製造後の実測値と
異なる原因は、多くの理由が考えられるが主な原因の1
つは設計時のシミュレーションによる遅延時間の見積シ
の精度の問題がある。もう1つハ、プロセスパラメータ
の実デバイス製造時におけるバラツキ又はシフトである
。前者の場合は、通常十分なパラメータfitting
 を行なって精度を上げることによシ本来問題は発生し
ないが、もしこれが生じた場合設計変更を必要とし、す
でに作成したマスクに対してインバータ回路の追加又は
削除のためマスクの修正を必要とし、はぼ全レイヤのマ
スク修正を生じる。
There are many possible reasons why the value at the initial design stage differs from the actual value measured after device manufacturing, but one of the main reasons is
One problem is the accuracy of estimating delay time through simulation during design. Another problem is variations or shifts in process parameters during actual device manufacturing. In the former case, usually sufficient parameter fitting
By doing this to improve accuracy, no problem will occur, but if this occurs, it will require design changes, and the mask will need to be modified to add or delete an inverter circuit to the mask that has already been created. This causes mask modification of all layers.

一方、実デバイス製造時におけるプロセスパラメータの
バラツキによる変動又は変更が生じた場合にも前述の初
期設計値からのズレを生じるということがしばしば問題
となる。これは初期設計の段階で十分な精度を上げて回
路シミュレーションを行なっていた状態であっても避け
ることができない問題であり何らかの対策をほどこす必
要がある。この場合についても、回路修正のためすでに
作成されているマスクの修正を行なうことがしばしば生
じる。このような事態が生じた場合、従来より第3図(
b)に示すように、実デバイスの遅延時間が大きい場合
インバータ回路の段数を減らすことにより遅延時間の縮
少を行なう必要があり、−方実デバイスが初期設計の遅
延値よりも少さい場合第3図(C)に示すようにインバ
ータ回路の段数を追加し遅延時間の拡大を図るという回
路の修正を行ない設計値に対して最適化を行なう。これ
らの回路修正に伴ないマスク修正を必要としほぼ全レイ
ヤにわたって修正を必要とする。
On the other hand, there is often a problem that deviations from the above-mentioned initial design values also occur when fluctuations or changes occur due to variations in process parameters during actual device manufacturing. This is an unavoidable problem even if circuit simulation is performed with sufficient accuracy at the initial design stage, and some countermeasure must be taken. In this case as well, it often happens that a mask that has already been created must be modified in order to modify the circuit. When such a situation occurs, conventionally, the method shown in Figure 3 (
As shown in b), if the delay time of the actual device is large, it is necessary to reduce the delay time by reducing the number of stages in the inverter circuit; As shown in FIG. 3(C), the circuit is modified to increase the delay time by adding the number of inverter circuit stages, and the design values are optimized. These circuit modifications require mask modifications, and modifications are required for almost all layers.

以上述べたように、種々の理由により回路の遅延値の初
期設計の値に対して実デバイスの値がズしている場合回
路修正を必要とし、このためインバータ回路の追加や削
除の修正が起こる。したがってマスク修正は、Tr レ
ベルの変更を伴なうためほぼ全レイヤにわたって修正が
必要となる。
As mentioned above, if the value of the actual device deviates from the initial design value of the circuit delay value due to various reasons, circuit modification is required, which results in modifications such as adding or deleting an inverter circuit. . Therefore, since mask modification involves changing the Tr level, it is necessary to modify almost all layers.

発明が解決しようとする課題 半導体集積回路装置における信号遅延回路において回路
変更が生じた場合トランジスタ等の追加又は削除を伴な
うことによシすでに作成したマスクに対してほぼ全レイ
ヤに近い数の修正を必要とするためマスクの修正に伴な
うコストが、数段のインバータ回路の変更にもかかわら
ず当初かかったマスクのコストと同程度かかるという大
きな問題がある。また、マスクの修正のレイヤ数が多数
となるため、全レイヤのマスク作成の処理時間と同程度
の時間がかかるため設計効率から考えても非常に大きな
問題である。
Problem to be Solved by the Invention When a circuit change occurs in a signal delay circuit in a semiconductor integrated circuit device, it is possible to add or delete transistors, etc., and thereby increase the number of layers close to almost all of the layers in the already created mask. Since correction is required, there is a major problem in that the cost associated with mask correction is about the same as the original cost of the mask, even though several stages of inverter circuits are changed. In addition, since the number of layers for mask correction is large, it takes about the same amount of time as the processing time for mask creation for all layers, which is a very big problem from the point of view of design efficiency.

本発明は、インバータ回路の段数の変更に伴なう修正を
必要とするマスク数の大幅な削減を実現することによる
大幅なコスト削減及び処理時間の大幅な短縮による設計
の効率化を実現するもので゛ ある。
The present invention realizes significant cost reduction by significantly reducing the number of masks that require modification due to changes in the number of stages in an inverter circuit, and improves design efficiency by significantly shortening processing time. It is.

課題を解決するための手段 本発明は、半導体集積回路装置の信号遅延回路において
初期設計の遅延時間を得るために設計変更を行なう場合
インバータ回路の段数の追加又は削除によりマスクのほ
ぼ全レベルにわたる修正を行なうことなく、あらかじめ
設計の精度のバラツキ及ヒプロセスパラメータ等のバラ
ツキを−1tLインバータ回路の段数をレイアウト上に
すでに用意しておきインバータ回路の出力と外部配線と
を接続する開口(コンタクト)用マスクの修正により所
望の遅延時間が得られるようなレイアウト構造にしてお
くことによシ、マスク修正に伴なう修正すべきマスクレ
イヤ数を最も少ない場合わすかルイヤのみで実現可能に
するものである。
Means for Solving the Problems The present invention makes it possible to modify almost all levels of the mask by adding or deleting the number of inverter circuit stages when the design is changed in order to obtain the delay time of the initial design in the signal delay circuit of a semiconductor integrated circuit device. The number of stages of the -1tL inverter circuit is already prepared on the layout to eliminate variations in design accuracy and variations in process parameters, etc., without having to perform By creating a layout structure that allows the desired delay time to be obtained by modifying the mask, the number of mask layers that must be modified due to mask modification can be minimized by using only a layer. be.

作  用 本発明は、上記で示した手段により従来から所望の遅延
時間を得るためにインバータ回路の追加又は゛削除によ
りほぼ全レイヤにわたシマスフ修正を行なう方法を必要
とせず、初期設計を行なった所望の遅延時間を有する出
力信号が得られるインバータ回路の出力に対して接続の
ための開口(コンタクト)を設けるというコンタクト用
マスクの修正によってわずかルイヤのみの修正マスク数
によシ実現することができる。
The present invention uses the above-mentioned means to perform an initial design without requiring the conventional method of adding or deleting inverter circuits to perform symmetry correction across almost all layers in order to obtain a desired delay time. By modifying the contact mask by providing an opening (contact) for connection to the output of the inverter circuit that provides an output signal with the desired delay time, this can be achieved with only a small number of modified masks. .

実施例 第1図は、本発明第1の実施例を示す等価回路を示す。Example FIG. 1 shows an equivalent circuit showing a first embodiment of the present invention.

第1図は、信号遅延回路の初期設計と修正後の回路図で
ある。入力信号4と同じ位相の正転信号で遅延時間Δt
の出力信号を得ることを目的とした信号遅延回路で、第
1図に示すように、直列接続された複数個のインバータ
回路3よシ構成されたもので初期設計における出力信号
5を得る配線上の接続用開口1の位置が、電気的接続点
となる。一方、実デバイスにおいてこの出力信号5の入
力信号4に対する遅延量を測定したところ設計値よりも
大きな値となシ設計変更の必要があることが判明した。
FIG. 1 shows an initial design and a modified circuit diagram of a signal delay circuit. Delay time Δt for normal rotation signal with the same phase as input signal 4
This is a signal delay circuit whose purpose is to obtain an output signal of The position of the connection opening 1 becomes the electrical connection point. On the other hand, when the amount of delay of this output signal 5 with respect to the input signal 4 was measured in an actual device, it was found that the value was larger than the designed value, so it was found that a design change was required.

そこで、設計上遅延時間Δtを得るための接続用開口の
最適化して修正を行なった位置は、第1図の2に示す接
続用開口となシ、所望の修正がコンタクト用マスクの修
正によシ実現できた。本発明によって、あらかじめ遅延
量の変更及び期待する位相の波形を得るために単に信号
配線の接続用開口の位置を変更することにより実現でき
るレイアウト構造を持たせることによシ上述の設計変更
を可能とすることができる。つまシ、設計変更によるチ
ップ製造用マスクの修正は、この接続用開口に関するマ
スクのみを修正するだけで実現することができ少ない場
合マスク−層のみでよいことがわかる。
Therefore, the position where the connection opening was optimized and corrected in order to obtain the delay time Δt in the design is the connection opening shown in 2 in Figure 1, and the desired correction is made by correction of the contact mask. I was able to accomplish this. According to the present invention, the above-mentioned design changes are possible by providing a layout structure that can be realized by simply changing the position of the connection opening of the signal wiring in order to change the amount of delay in advance and obtain the expected phase waveform. It can be done. However, it can be seen that modification of the chip manufacturing mask due to a design change can be achieved by modifying only the mask related to the connection opening, and in cases where the number of connections is small, only the mask layer is sufficient.

第1図に示した複数個接続されたインバータ回路3は、
論理的にインバータ回路として機能する別の論理回路に
より実現されたものでもよいことは言うまでもない。ま
た接続用開口とは、デバイスを製造するためのマスクに
おけるコンタクトを意味するが、論理又は回路上で意味
するところの電気的な接続点に相当するものであれば特
にこの限シではない。
A plurality of connected inverter circuits 3 shown in FIG.
It goes without saying that it may be realized by another logic circuit that logically functions as an inverter circuit. Further, the connection opening means a contact in a mask for manufacturing a device, but is not particularly limited to this as long as it corresponds to an electrical connection point in terms of logic or circuits.

第2図には、本発明筒2の実施例を示す。これハ、二層
AL (アルミニウム)−層PS(ポリシリコン)プロ
セスを用いた場合の信号遅延回路をインバータ回路によ
り構成されたものである。
FIG. 2 shows an embodiment of the tube 2 of the present invention. In this case, a signal delay circuit using a two-layer AL (aluminum)-layer PS (polysilicon) process is constructed by an inverter circuit.

21は二層目AL(AA)、22は一層目Ar、、(A
I、)。
21 is the second layer AL (AA), 22 is the first layer Ar, (A
I,).

24は拡散層(OD)、25は一層目コンタクト(CW
) 、 26−27ハ二層目コンタクト(Cx)である
。この第2の実施例は、第1の実施例に準じた論理構成
で具体的なレイアウト構造を示したものである。図中の
26は出力配線へインバータの出力を接続する開口1で
あシ初期設計における開口の位置を示したものである。
24 is a diffusion layer (OD), 25 is a first layer contact (CW)
), 26-27C are second layer contacts (Cx). This second embodiment shows a specific layout structure with a logical configuration similar to the first embodiment. Reference numeral 26 in the figure indicates the opening 1 for connecting the output of the inverter to the output wiring, and indicates the position of the opening in the initial design.

しかし、第1の実施例において説明したように実デバイ
ス製造後の遅延時間が大きくなったため設計変更を行な
ったところの最適な遅延時間が得られる開口の位置が2
7の開口1′であることがわかった。したがっ4て、遅
延時間の変更のためのマスク修正が上記で示したように
単にコンタクト用マスク(CX)において初期設計で決
定された開口1を消失させ、新たに開口1′を作成する
ことによシ実現できることがわかる。
However, as explained in the first embodiment, the delay time after manufacturing the actual device increased, so the design was changed and the aperture position where the optimal delay time could be obtained was changed to 2.
7 opening 1'. Therefore, as shown above, the mask modification for changing the delay time simply eliminates the opening 1 determined in the initial design in the contact mask (CX) and creates a new opening 1'. I can see that it can be achieved.

この第2の実施例においては、二層AL・−層PSのプ
ロセス技術の例を示したが、−層AL・−層PS、−層
AI、・二層PS 、ポリサイド、シリサイドを用いた
プロセス技術、三次元のプロセス技術など他のいかなる
プロセス技術を持いた場合であっても特に限定するもの
ではない。また、複数のインバータ回路で構成された信
号遅延回路における各インバータ回路は、必ずしも同一
の回路、同一のトランジスタ等を用いたものである必要
はない。
In this second embodiment, an example of a process technology for two-layer AL/-layer PS was shown, but a process using -layer AL/-layer PS, -layer AI, double-layer PS, polycide, and silicide is also described. There is no particular limitation on the use of any other process technology, such as technology or three-dimensional process technology. Further, each inverter circuit in a signal delay circuit configured with a plurality of inverter circuits does not necessarily need to use the same circuit, the same transistor, or the like.

発明の効果 以上述べたように、本発明によれば信号遅延回路におけ
る遅延量の変更を行なう場合トランジスタ等の追加又は
削除にともなうマスクの大幅な変更、多数のマスク修正
を行なう必要がなく最も少ない場合わずか一枚のコンタ
クト用マスクの修正のみでよい。したがって第1に、マ
スク変更に伴なう作業工数の大幅な低減を可能とし、設
計変更の非常な効率化・時間の短縮化を実現できる。第
2に、設計変更に伴なうマスク修正の数量が少なくてよ
いため、設計のコストの大幅な削減を実現できる。第3
に、プロセスパラメータの変更の発生又は設計における
シミュレーンゴン精度の改善等の設計変更の必要性が生
じた場合に効率的かつ柔軟に対応可能である。
Effects of the Invention As described above, according to the present invention, when changing the amount of delay in a signal delay circuit, there is no need to make a large change in the mask due to the addition or deletion of a transistor, etc., or to make many mask corrections, which is the least possible. In some cases, only one contact mask needs to be modified. Therefore, firstly, it is possible to significantly reduce the number of man-hours involved in changing masks, and it is possible to realize extremely efficient and time-saving design changes. Second, because the number of mask corrections required for design changes is small, design costs can be significantly reduced. Third
In addition, it is possible to efficiently and flexibly respond to changes in process parameters or the need for design changes such as improvement of simulation accuracy in design.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明筒1の実施例を説明する信号遅延回路の
初期設計及び修正後の接続用開口を含む回路図、第2図
は本発明筒2の実施例を説明する信号遅延回路のレイア
ウト図、第3図は従来例の信号遅延回路の回路図である
。 1.2・・・・・・接続用開口、3・・・・・・インバ
ータ回路、4・・・・・・入力信号、5・・・・・・出
力信号。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名6p
           −n。
FIG. 1 is a circuit diagram including an initial design of a signal delay circuit and connection openings after modification, illustrating an embodiment of a tube 1 of the present invention, and FIG. 2 is a circuit diagram of a signal delay circuit illustrating an embodiment of a tube 2 of the present invention. The layout diagram, FIG. 3, is a circuit diagram of a conventional signal delay circuit. 1.2... Connection opening, 3... Inverter circuit, 4... Input signal, 5... Output signal. Name of agent: Patent attorney Toshio Nakao and 1 other person 6 pages
-n.

Claims (1)

【特許請求の範囲】[Claims]  半導体集積回路装置において直列接続された複数個の
インバータ回路を有し、前記インバータ回路の複数の出
力中任意の1出力を少なくとも電気的接続点である接続
用開口の選択的設置のみで選択できることを特徴とする
信号遅延回路。
A semiconductor integrated circuit device has a plurality of inverter circuits connected in series, and any one output among the plurality of outputs of the inverter circuit can be selected only by selectively installing a connection opening that is an electrical connection point. Characteristic signal delay circuit.
JP63012928A 1988-01-22 1988-01-22 Signal delay circuit Expired - Fee Related JP2808594B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63012928A JP2808594B2 (en) 1988-01-22 1988-01-22 Signal delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63012928A JP2808594B2 (en) 1988-01-22 1988-01-22 Signal delay circuit

Publications (2)

Publication Number Publication Date
JPH01189222A true JPH01189222A (en) 1989-07-28
JP2808594B2 JP2808594B2 (en) 1998-10-08

Family

ID=11818979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63012928A Expired - Fee Related JP2808594B2 (en) 1988-01-22 1988-01-22 Signal delay circuit

Country Status (1)

Country Link
JP (1) JP2808594B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183895A (en) * 2003-11-28 2005-07-07 Ricoh Co Ltd Cell layout, semiconductor integrated circuit device, method of designing semiconductor integrated circuit, and method of manufacturing semiconductor of semiconductor integrated circuit
JP2005249940A (en) * 2004-03-02 2005-09-15 Seiko Epson Corp Electro-optical device and electronic apparatus
JP2009200217A (en) * 2008-02-21 2009-09-03 Nec Corp Semiconductor integrated circuit
WO2020103146A1 (en) * 2018-11-23 2020-05-28 华为技术有限公司 Power supply control method and device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
JPS63204813A (en) * 1986-11-07 1988-08-24 マイテル・コーポレーション Frequency doubler

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
JPS63204813A (en) * 1986-11-07 1988-08-24 マイテル・コーポレーション Frequency doubler

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183895A (en) * 2003-11-28 2005-07-07 Ricoh Co Ltd Cell layout, semiconductor integrated circuit device, method of designing semiconductor integrated circuit, and method of manufacturing semiconductor of semiconductor integrated circuit
JP4523290B2 (en) * 2003-11-28 2010-08-11 株式会社リコー Cell layout, semiconductor integrated circuit device, semiconductor integrated circuit design method, and semiconductor integrated circuit semiconductor manufacturing method
JP2005249940A (en) * 2004-03-02 2005-09-15 Seiko Epson Corp Electro-optical device and electronic apparatus
JP4529484B2 (en) * 2004-03-02 2010-08-25 セイコーエプソン株式会社 Electro-optical device and electronic apparatus
JP2009200217A (en) * 2008-02-21 2009-09-03 Nec Corp Semiconductor integrated circuit
JP4552073B2 (en) * 2008-02-21 2010-09-29 日本電気株式会社 Semiconductor integrated circuit
WO2020103146A1 (en) * 2018-11-23 2020-05-28 华为技术有限公司 Power supply control method and device

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