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JPH01162236U - - Google Patents

Info

Publication number
JPH01162236U
JPH01162236U JP5548788U JP5548788U JPH01162236U JP H01162236 U JPH01162236 U JP H01162236U JP 5548788 U JP5548788 U JP 5548788U JP 5548788 U JP5548788 U JP 5548788U JP H01162236 U JPH01162236 U JP H01162236U
Authority
JP
Japan
Prior art keywords
recess
semiconductor component
semiconductor
metallized layer
conductive pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5548788U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5548788U priority Critical patent/JPH01162236U/ja
Publication of JPH01162236U publication Critical patent/JPH01162236U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

図面はいずれも本考案の実施例を示し、第1図
は第1の実施例の平面図、第2図および第3図は
夫々その断面図、第4図は第2の実施例の平面図
、第5図及び第6図は夫々その断面図、第7図は
第3の実施例の平面図、第8図はその断面図であ
る。 1,2,3,9……メタライズ層、4……FE
Tチツプ、5……凹所、6……ソルダ、7……ボ
ンデイングワイヤ、8……素子容器。
The drawings all show embodiments of the present invention; FIG. 1 is a plan view of the first embodiment, FIGS. 2 and 3 are sectional views thereof, and FIG. 4 is a plan view of the second embodiment. , FIG. 5 and FIG. 6 are respectively sectional views thereof, FIG. 7 is a plan view of the third embodiment, and FIG. 8 is a sectional view thereof. 1, 2, 3, 9...metalized layer, 4...FE
T-chip, 5... recess, 6... solder, 7... bonding wire, 8... element container.

Claims (1)

【実用新案登録請求の範囲】 1 凹所が形成されている絶縁性の素子容器の、
前記凹所内底部にメタライズ層が形成されており
、前記メタライズ層上に半導体チツプがソルダに
て固着されている半導体部品。 2 凹所は、導電パターン中に形成されている請
求項1記載の半導体部品。 3 導電パターンはドレイン用、ゲート用および
ソース用に夫々分離して形成されており、各導電
パターンは夫々半導体素子にボンデイングワイヤ
にて接続されている請求項1又は請求項2記載の
半導体部品。
[Claims for Utility Model Registration] 1. An insulating device container in which a recess is formed.
A semiconductor component, wherein a metallized layer is formed on the inner bottom of the recess, and a semiconductor chip is fixed on the metallized layer with solder. 2. The semiconductor component according to claim 1, wherein the recess is formed in the conductive pattern. 3. The semiconductor component according to claim 1 or claim 2, wherein the conductive patterns are formed separately for a drain, a gate, and a source, respectively, and each conductive pattern is connected to the semiconductor element by a bonding wire.
JP5548788U 1988-04-25 1988-04-25 Pending JPH01162236U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5548788U JPH01162236U (en) 1988-04-25 1988-04-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5548788U JPH01162236U (en) 1988-04-25 1988-04-25

Publications (1)

Publication Number Publication Date
JPH01162236U true JPH01162236U (en) 1989-11-10

Family

ID=31281389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5548788U Pending JPH01162236U (en) 1988-04-25 1988-04-25

Country Status (1)

Country Link
JP (1) JPH01162236U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003023843A1 (en) * 2001-09-05 2003-03-20 Renesas Thechnology Corp. Semiconductor device, its manufacturing method, and radio communication device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003023843A1 (en) * 2001-09-05 2003-03-20 Renesas Thechnology Corp. Semiconductor device, its manufacturing method, and radio communication device

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