JPH01107128U - - Google Patents
Info
- Publication number
- JPH01107128U JPH01107128U JP55088U JP55088U JPH01107128U JP H01107128 U JPH01107128 U JP H01107128U JP 55088 U JP55088 U JP 55088U JP 55088 U JP55088 U JP 55088U JP H01107128 U JPH01107128 U JP H01107128U
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- wafer
- processing apparatus
- gas
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は、本考案の装置を示す縦断面概略図、
第２図は、同側面概略図、第３図は、従来の装置
を示す縦断面概略図である。
１……赤外線照射用のチヤンバ、２……ランプ
室、２１……赤外線ランプ、３……ガス取入口、
４……ガス質量分析器、５……ウエハ、６……載
台、７……熱電変換形センサ、８……光センサ。
FIG. 1 is a schematic vertical cross-sectional view showing the device of the present invention;
FIG. 2 is a schematic side view of the same side, and FIG. 3 is a schematic vertical cross-sectional view showing the conventional device. 1...Chamber for infrared irradiation, 2...Lamp chamber, 21...Infrared lamp, 3...Gas intake port,
4... Gas mass spectrometer, 5... Wafer, 6... Mounting stage, 7... Thermoelectric conversion type sensor, 8... Optical sensor.
Claims (1)
部に設けた赤外線ランプによつて照射処理するも
のであつて、 前記チヤンバに内部の温度を検知する熱電変換
形センサを設けるとともに、 該チヤンバに連通したガス取入口を介してガス
質量分析器を配置したウエハの赤外線処理装置。 (2) 前記ガス取入口は前記チヤンバの内部より
も高真空と成した第１項記載のウエハの赤外線処
理装置。[Claims for Utility Model Registration] (1) A wafer carried into a chamber is irradiated with an infrared lamp installed at the top of the chamber, and the chamber is equipped with a thermoelectric conversion sensor for detecting the internal temperature. A wafer infrared processing apparatus, further comprising: a gas mass spectrometer disposed through a gas inlet communicating with the chamber. (2) The wafer infrared processing apparatus according to item 1, wherein the gas intake port has a higher vacuum than the inside of the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55088U JPH01107128U (en) | 1988-01-08 | 1988-01-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55088U JPH01107128U (en) | 1988-01-08 | 1988-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01107128U true JPH01107128U (en) | 1989-07-19 |
Family
ID=31199680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55088U Pending JPH01107128U (en) | 1988-01-08 | 1988-01-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01107128U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153884A (en) * | 1989-11-10 | 1991-07-01 | Nec Corp | Etching device |
-
1988
- 1988-01-08 JP JP55088U patent/JPH01107128U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03153884A (en) * | 1989-11-10 | 1991-07-01 | Nec Corp | Etching device |
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