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JP7632261B2 - シリコンウェーハ及びその製造方法 - Google Patents

シリコンウェーハ及びその製造方法 Download PDF

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Publication number
JP7632261B2
JP7632261B2 JP2021205584A JP2021205584A JP7632261B2 JP 7632261 B2 JP7632261 B2 JP 7632261B2 JP 2021205584 A JP2021205584 A JP 2021205584A JP 2021205584 A JP2021205584 A JP 2021205584A JP 7632261 B2 JP7632261 B2 JP 7632261B2
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JP
Japan
Prior art keywords
oxygen concentration
silicon wafer
high oxygen
atoms
polishing
Prior art date
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Active
Application number
JP2021205584A
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English (en)
Japanese (ja)
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JP2023090559A (ja
Inventor
淳 藤瀬
学 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2021205584A priority Critical patent/JP7632261B2/ja
Priority to KR1020220175786A priority patent/KR20230092790A/ko
Priority to CN202211620770.7A priority patent/CN116266531A/zh
Priority to TW111148542A priority patent/TWI836802B/zh
Publication of JP2023090559A publication Critical patent/JP2023090559A/ja
Application granted granted Critical
Publication of JP7632261B2 publication Critical patent/JP7632261B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Silicon Compounds (AREA)
JP2021205584A 2021-12-17 2021-12-17 シリコンウェーハ及びその製造方法 Active JP7632261B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021205584A JP7632261B2 (ja) 2021-12-17 2021-12-17 シリコンウェーハ及びその製造方法
KR1020220175786A KR20230092790A (ko) 2021-12-17 2022-12-15 실리콘 웨이퍼 및 그의 제조 방법
CN202211620770.7A CN116266531A (zh) 2021-12-17 2022-12-16 硅晶片及其制造方法
TW111148542A TWI836802B (zh) 2021-12-17 2022-12-16 矽晶圓及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021205584A JP7632261B2 (ja) 2021-12-17 2021-12-17 シリコンウェーハ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2023090559A JP2023090559A (ja) 2023-06-29
JP7632261B2 true JP7632261B2 (ja) 2025-02-19

Family

ID=86742837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021205584A Active JP7632261B2 (ja) 2021-12-17 2021-12-17 シリコンウェーハ及びその製造方法

Country Status (4)

Country Link
JP (1) JP7632261B2 (zh)
KR (1) KR20230092790A (zh)
CN (1) CN116266531A (zh)
TW (1) TWI836802B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
US20100290971A1 (en) 2009-05-15 2010-11-18 Wataru Itou Silicon wafer and method for producing the same
WO2011052787A1 (ja) 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
JP2013074139A (ja) 2011-09-28 2013-04-22 Globalwafers Japan Co Ltd シリコンウェーハの熱処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012134517A (ja) 2012-02-08 2012-07-12 Sumco Corp Ｉｇｂｔ用のシリコンウェーハ及びその製造方法
JP6115651B2 (ja) * 2014-01-14 2017-04-19 株式会社Sumco シリコンウェーハの製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP6610056B2 (ja) * 2015-07-28 2019-11-27 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハの製造方法
JP6493105B2 (ja) * 2015-09-04 2019-04-03 株式会社Sumco エピタキシャルシリコンウェーハ
WO2018159108A1 (ja) 2017-02-28 2018-09-07 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶インゴット
AU2020329758A1 (en) * 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Wafer with regions of low oxygen concentration

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
US20080315364A1 (en) 2005-11-14 2008-12-25 Fuji Electric Device Technology Co., Ltd. Semiconductor device and manufacturing method for same
US20100290971A1 (en) 2009-05-15 2010-11-18 Wataru Itou Silicon wafer and method for producing the same
JP2010267846A (ja) 2009-05-15 2010-11-25 Sumco Corp シリコンウェーハおよびその製造方法
WO2011052787A1 (ja) 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
US20120267681A1 (en) 2009-11-02 2012-10-25 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2013074139A (ja) 2011-09-28 2013-04-22 Globalwafers Japan Co Ltd シリコンウェーハの熱処理方法

Also Published As

Publication number Publication date
TW202325923A (zh) 2023-07-01
KR20230092790A (ko) 2023-06-26
JP2023090559A (ja) 2023-06-29
CN116266531A (zh) 2023-06-20
TWI836802B (zh) 2024-03-21

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