JP7292120B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

The present disclosure relates to a substrate processing method and a substrate processing apparatus.

As a method for drying the substrate after cleaning, a volatile liquid is supplied to the surface of the substrate to replace the liquid remaining on the substrate with the volatile liquid, and then the substrate is dried by volatilizing the volatile liquid. method is known.

Japanese Unexamined Patent Application Publication No. 2015-213105

The present disclosure provides technology capable of reducing the amount of particles adhering to a substrate.

A substrate processing method according to an aspect of the present disclosure includes a processing liquid supply process, a two-liquid supply process, a first movement process, and a second movement process. The processing liquid supply step supplies the processing liquid to the substrate. In the two-liquid supply step, after the treatment liquid supply step, the drying liquid having higher volatility than the treatment liquid is supplied to the substrate while supplying the treatment liquid to the substrate. The first moving step moves the ejection position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step. The second moving step moves the ejection position of the drying liquid to the outer peripheral portion of the substrate after the first moving step and after a predetermined time has passed since the supply of the drying liquid to the substrate is started. move towards.

According to the present disclosure, it is possible to reduce the amount of particles adhering to the substrate.

FIG. 1 is a diagram showing the configuration of a substrate processing system according to an embodiment. FIG. 2 is a diagram illustrating the configuration of a processing unit according to the embodiment; FIG. 3 is a flow chart showing a processing procedure of substrate processing executed by the processing unit. FIG. 4 is a diagram illustrating an operation example of replacement processing. FIG. 5 is a diagram illustrating an operation example of replacement processing. FIG. 6 is a diagram illustrating an operation example of replacement processing. FIG. 7 is a diagram illustrating an operation example of replacement processing. FIG. 8 is a diagram illustrating an operation example of replacement processing. FIG. 9 is a diagram illustrating an operation example of replacement processing. FIG. 10 is a diagram showing an operation example of the second movement step according to the modification.

Embodiments for implementing a substrate processing method and a substrate processing apparatus according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail below with reference to the drawings. The substrate processing method and substrate processing apparatus according to the present disclosure are not limited to this embodiment. Further, each embodiment can be appropriately combined within a range that does not contradict the processing contents. Also, in each of the following embodiments, the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.

In addition, in each drawing referred to below, in order to make the explanation easier to understand, an orthogonal coordinate system is shown in which the X-axis direction, the Y-axis direction and the Z-axis direction that are orthogonal to each other are defined, and the Z-axis positive direction is the vertically upward direction. Sometimes. Also, the direction of rotation about the vertical axis is sometimes called the θ direction.

<Configuration of substrate processing system>
FIG. 1 is a diagram showing the configuration of a substrate processing system according to an embodiment. As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3 . The loading/unloading station 2 and the processing station 3 are provided adjacently.

The loading/unloading station 2 includes a carrier table 11 and a transport section 12 . A plurality of carriers C for accommodating a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state are mounted on the carrier table 11 .

A plurality of load ports are arranged on the carrier mounting table 11 so as to be adjacent to the transport unit 12, and one carrier C is mounted on each of the plurality of load ports.

The transport unit 12 is provided adjacent to the carrier table 11 and includes a substrate transport device 13 and a delivery unit 14 therein. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis. conduct.

The processing station 3 is provided adjacent to the transport section 12 . The processing station 3 comprises a transport section 15 and a plurality of processing units 16 . A plurality of processing units 16 are arranged side by side on both sides of the transport section 15 .

The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. In addition, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using a wafer holding mechanism. I do.

The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

The substrate processing system 1 also includes a control device 4 . Control device 4 is, for example, a computer, and includes control unit 18 and storage unit 19 . The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1 . The control unit 18 controls the operation of the substrate processing system 1 by reading and executing programs stored in the storage unit 19 .

The program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier table 11, and transfers the taken-out wafer W to the delivery section. 14. The wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

The wafer W loaded into the processing unit 16 is processed by the processing unit 16 , then unloaded from the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14 . Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier table 11 by the substrate transfer device 13 .

<Configuration of processing unit>
Next, the processing unit 16 will be described with reference to FIG. FIG. 2 is a diagram showing the configuration of the processing unit 16 according to the embodiment.

As shown in FIG. 2 , the processing unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a first supply section 40 , a second supply section 50 and a collection cup 60 .

Chamber 20 accommodates substrate holding mechanism 30 , first supply section 40 , second supply section 50 and collection cup 60 . An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20 . FFU 21 forms a downflow in chamber 20 .

The substrate holding mechanism 30 includes a holding portion 31 , a support portion 32 and a driving portion 33 . The holding part 31 holds the wafer W horizontally. Specifically, the holding unit 31 includes a plurality of gripping portions 31a, and grips the peripheral portion of the wafer W using the plurality of gripping portions 31a. The column portion 32 extends vertically, has a base end rotatably supported by the driving portion 33 , and supports the holding portion 31 horizontally at the tip end. The drive section 33 rotates the support section 32 around the vertical axis. The substrate holding mechanism 30 rotates the holding part 31 supported by the supporting part 32 by rotating the supporting part 32 using the driving part 33, thereby rotating the wafer W held by the holding part 31. .

The first supply unit 40 includes a rinse liquid nozzle 41, a chemical liquid nozzle 42, a first arm 43 that supports the rinse liquid nozzle 41 and the chemical liquid nozzle 42, and a first moving mechanism 44 that moves the first arm 43. .

The rinse liquid nozzle 41 is connected to the supply line 467 . A supply line 467 connects the rinse liquid nozzle 41 and the rinse liquid supply source 46 . The rinse liquid supply source 46 supplies the rinse liquid to the rinse liquid nozzle 41 via the supply line 467 . Here, DIW (deionized water) is used as the rinse liquid. A valve 45 is provided in the supply line 467 . The valve 45 switches between ejection and non-ejection of DIW from the rinse liquid nozzle 41 to the wafer W by opening and closing the supply line 467 .

The chemical nozzle 42 is connected to the supply line 487 . A supply line 487 connects the chemical nozzle 42 and the chemical supply source 48 . The chemical liquid supply source 48 supplies the chemical liquid to the chemical liquid nozzle 42 via the supply line 487 . Although the type of chemical solution is not particularly limited, for example, HF (hydrofluoric acid), SC1 (ammonia/hydrogen peroxide/water mixture), etc. are used. A valve 47 is provided in the supply line 487 . The valve 47 switches between ejection and non-ejection of the chemical liquid from the chemical liquid nozzle 42 to the wafer W by opening and closing the supply line 487 .

The second supply unit 50 includes a drying liquid nozzle 51 , a second arm 53 that supports the drying liquid nozzle 51 , and a second moving mechanism 54 that moves the second arm 53 .

Drying liquid nozzle 51 is connected to supply line 567 . A supply line 567 connects the drying liquid nozzle 51 and the drying liquid supply source 56 . Drying liquid supply 56 supplies drying liquid to drying liquid nozzles 51 via supply line 567 . Here, IPA (isopropyl alcohol) is used as the drying liquid. The drying liquid may be a volatile solvent other than IPA, such as acetone. In addition, the drying liquid may be any liquid having a higher volatility than the rinse liquid (here, DIW). A valve 55 is provided in the supply line 567 . The valve 55 switches between ejection and non-ejection of IPA from the drying liquid nozzle 51 to the wafer W by opening and closing the supply line 567 .

The drying liquid supply source 56 has a tank 561 that stores IPA and a circulation line 562 that exits the tank 561 and returns to the tank 561 . A pump 563 is provided in the circulation line 562 . Pump 563 creates a circulation flow out of tank 561 and back to tank 561 through circulation line 562 . A heater 564 and a filter 565 are provided downstream of the pump 563 in the circulation line 562 . A heater 564 heats the IPA flowing through the circulation line 562 . For example, IPA is heated to about 65-75° C. by heater 564 . Filter 565 removes foreign matter such as particles contained in IPA.

A plurality of supply lines 567 are connected to the circulation line 562 . Each supply line 567 supplies the processing liquid flowing through the circulation line 562 to the corresponding processing unit 16 . Each circulation line 562 can be provided with a flow control mechanism such as a flow control valve, a filter, or the like, if necessary. Further, the circulation line 562 is provided with a valve 566 that opens and closes the circulation line 562 downstream of the plurality of supply lines 567 .

A replenishment unit 568 for replenishing IPA is connected to the tank 561 . Also, the tank 561 is provided with a drain portion 569 for discarding the IPA in the tank 561 .

Note that the chemical liquid nozzle 42 may be provided in the second supply section 50 . In addition to the first arm 43, the second arm 53, the first moving mechanism 44, and the second moving mechanism 54, the processing unit 16 also includes a third arm that supports the chemical liquid nozzle 42, and a third arm that moves the third arm. A third moving mechanism may be provided.

The collection cup 60 is arranged to surround the holding portion 31 and collects the processing liquid scattered from the wafer W due to the rotation of the holding portion 31 . A drain port 61 is formed at the bottom of the recovery cup 60 , and the processing liquid collected by the recovery cup 60 is discharged to the outside of the processing unit 16 through the drain port 61 . An exhaust port 62 is formed at the bottom of the collection cup 60 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16 .

<Specific Operation of Processing Unit>
Next, details of the substrate cleaning process executed by the processing unit 16 will be described with reference to FIG. FIG. 3 is a flow chart showing a processing procedure of substrate processing executed by the processing unit 16. As shown in FIG. The processing procedure shown in FIG. 3 is executed by the control unit 18 reading a program stored in the storage unit 19 of the control device 4 and controlling the processing unit 16 and the like based on the read instructions.

As shown in FIG. 3, first, chemical treatment is performed (step S101). In the chemical solution processing, the holding part 31 holding the wafer W is rotated. Also, a chemical liquid nozzle 42 is arranged above the center of the wafer W. As shown in FIG. After that, the valve 47 is opened for a preset time, and the chemical liquid is discharged from the chemical liquid nozzle 42 toward the central portion of the rotating wafer W. As shown in FIG. The chemical liquid supplied to the central portion of the wafer W spreads over the entire upper surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. FIG. Thereby, the upper surface of the wafer W is processed. For example, the upper surface of the wafer W, which is the device surface, is cleaned.

Subsequently, a rinse process is performed (step S102). A rinse liquid nozzle 41 is arranged above the center of the wafer W in the rinse process. After that, the valve 45 is opened for a preset time, and DIW, which is the rinse liquid, is discharged from the rinse liquid nozzle 41 toward the central portion of the rotating wafer W. As shown in FIG. The DIW supplied to the central portion of the wafer W spreads over the entire upper surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. FIG. As a result, the chemical liquid remaining on the upper surface of the wafer W is washed away by the DIW.

Subsequently, replacement processing is performed (step S103). The replacement process is a process of replacing the DIW remaining on the wafer W with IPA, which is more volatile than DIW. Here, if the supply of IPA to the wafer W is started after the supply of DIW to the wafer W is stopped, the wafer W dries up after the supply of DIW is stopped until the supply of IPA is supplied. , the upper surface of the wafer W may be exposed from the liquid film. As the wafer W dries, watermarks may be generated on the upper surface of the wafer W, or the amount of particles remaining on the upper surface of the wafer W may increase.

Therefore, in the replacement process, IPA is supplied to the upper surface of the wafer W from the drying liquid nozzle 51 while supplying DIW to the upper surface of the wafer W from the rinsing liquid nozzle 41 following the rinsing process. That is, two liquids, DIW and IPA, are supplied to the wafer W at the same time. After that, the rinse liquid nozzle 41 is moved toward the outer periphery of the wafer W. As shown in FIG. As a result, while spreading the IPA liquid film, it is possible to cover the regions on the wafer W to which the IPA has not yet reached with the DIW liquid film. Therefore, drying of the wafer W can be suppressed. Details of the replacement process will be described later.

Subsequently, a drying process is performed (step S104). In the drying process, the number of rotations of the holding portion 31 is increased. As a result, the IPA remaining on the wafer W is shaken off and the wafer W is dried. After the drying process is completed, the rotation of the holding portion 31 is stopped. After that, the wafer W is unloaded from the processing unit 16 by the substrate transfer device 17 (see FIG. 1). Thus, a series of substrate processing for one wafer W is completed.

By the way, the IPA discharged from the drying liquid nozzle 51 may contain foreign matter generated from the valve 55 . This foreign matter is, for example, fine particles such as metal powder generated when the movable portion (piston) of the valve 55 rubs against the fixed portion (cylinder) of the valve 55 when the valve 55 is opened and closed. In particular, when heated IPA is used as in the present embodiment, the valve 55 thermally expands due to the heated IPA, and as a result, the frictional force between the movable portion and the fixed portion increases, resulting in the amount of foreign matter generated. may increase. In the case where DIW and IPA are simultaneously discharged as in the present embodiment, if IPA and DIW containing foreign matter are mixed on the wafer W, there is a possibility that particles will increase due to the foreign matter adhering on the wafer W. be.

Therefore, in the processing unit 16 according to the embodiment, the operation of the second supply unit 50 and the like in the replacement process is controlled so that the foreign matter generated from the valve 55 is less likely to remain on the wafer W. Specific operations of the processing unit 16 in the replacement process will be described below with reference to FIGS. 4 to 9. FIG. 4 to 9 are diagrams showing operation examples of the replacement process.

4 to 6 are diagrams showing an operation example of the two-liquid supply step in the replacement process. 5 and 6 are diagrams showing an operation example of the first moving step in the replacement process. Moreover, FIG. 8 is a diagram showing an operation example of the second movement step, the maintenance step, the rotation speed change step, and the flow rate change step in the replacement process. Also, FIG. 9 is a diagram showing an operation example of the third movement step in the replacement process.

First, as shown in FIG. 4, following the rinsing process, that is, after the rinsing process is completed, the rinsing liquid nozzle 41 is placed above the center of the wafer W without stopping the discharge of DIW from the rinsing liquid nozzle 41 . DIW is supplied to the rotating wafer W from the . Further, the drying liquid nozzle 51 starts moving from the outside of the wafer W toward the center of the wafer W by the second moving mechanism 54 (see FIG. 2).

Here, more foreign matter M is produced when the valve 55 is closed. Therefore, as shown in FIG. 4, the foreign matter M generated when the valve 55 was closed in the previous replacement process remains in the supply line 567 . Here, an example in which the foreign matter M remains in the supply line 567 on the downstream side of the valve 55 is shown, but the foreign matter M also remains in the supply line 567 and the valve 55 on the upstream side of the valve 55. may be

Subsequently, as shown in FIG. 5, the rinse liquid nozzle 41 starts moving from the central portion of the wafer W toward the outer peripheral portion by the first moving mechanism 44 (see FIG. 2). After the drying liquid nozzle 51 reaches the upper center of the wafer W, the IPA is supplied from the drying liquid nozzle 51 to the center of the wafer W by opening the valve 55 . As shown in FIG. 6, the IPA liquid film expands as the rinse liquid nozzle 41 moves.

Subsequently, as shown in FIG. 7, after the rinse liquid nozzle 41 reaches the outer peripheral portion of the wafer W, the valve 45 is closed, thereby stopping the supply of DIW from the rinse liquid nozzle 41 to the wafer W. FIG. As a result, the IPA liquid film can be formed on the entire upper surface of the wafer W while suppressing drying of the wafer W.

As shown in FIGS. 5 to 7, in the processing unit 16, foreign matter M remaining around the valve 55 is prevented from being ejected from the drying liquid nozzle 51 before the supply of DIW is stopped. The volume of the side supply line 567 and the flow rate of IPA are set. As a result, mixing of IPA and DIW containing foreign matter M is suppressed, so an increase in particles can be suppressed. In addition, not limited to this, after the IPA liquid film is formed on at least the entire upper surface of the wafer W, the IPA containing the foreign matter M is ejected from the drying liquid nozzle 51 so that the IPA is ejected downstream of the valve 55 . The volume of the supply line 567 and the flow rate of IPA may be set. By covering the entire upper surface of the wafer W with IPA that does not contain the foreign matter M, adhesion of the foreign matter M to the wafer W can be suppressed.

Subsequently, when a preset time (first set time) elapses after the supply of IPA to the wafer W is started (see FIG. 5), the drying liquid nozzle 51 moves toward the outer periphery of the wafer W. to start.

The first set time is based on the volume of the supply line 567 on the downstream side of the valve 55, the flow rate of IPA, the moving speed of the drying liquid nozzle 51, and the like, and after the valve 55 is opened, the foreign matter M is removed from the drying liquid nozzle. The time is set to be shorter than the time required for ejection from 51 . The "time required for the foreign matter M to be ejected from the drying liquid nozzle 51 after the valve 55 is opened" is determined by prior experiments, simulations, or the like.

As a result, as shown in FIG. 8, after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W, the IPA containing the foreign matter M is discharged to the outer peripheral portion of the wafer W. As shown in FIG. By discharging the IPA containing the foreign matter M to the outer peripheral portion of the wafer W in this manner, compared with the case where the IPA containing the foreign matter M is discharged to the central portion of the wafer W, the wafer of the foreign matter M is more likely to be discharged. The adhesion amount to W can be suppressed.

The position of the drying liquid nozzle 51 is maintained at the outer periphery of the wafer W until a preset time (second set time) elapses after the drying liquid nozzle 51 reaches the outer periphery of the wafer W. . The second set time is set to a time equal to or longer than the time required for the IPA containing the foreign matter M to be discharged from the drying liquid nozzle 51 until the discharge is completed. As a result, for example, it is possible to prevent the IA containing the foreign matter M from being discharged radially inward from the outer peripheral portion of the wafer W in the subsequent third movement step.

Further, as shown in FIG. 8, after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W, the rotation speed of the holder 31 is increased until the second set time elapses. That is, the wafer W is rotated at a higher speed. As a result, the foreign matter M ejected onto the outer peripheral portion of the wafer W can be quickly discharged to the outside of the wafer W. FIG. That is, it is possible to improve the performance of discharging the foreign matter M. After the second set time has elapsed, the rotation speed of the holding portion 31 is returned to the original rotation speed.

Further, after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W, the flow rate of the IPA discharged from the drying liquid nozzle 51 is increased until the second set time elapses. As a result, the IPA containing the foreign matter M is less likely to remain on the wafer W compared to the case where the IPA containing the foreign matter M is discharged at a low flow rate, so the performance of discharging the foreign matter M can be improved. After the second set time has elapsed, the flow rate of IPA is returned to the original flow rate.

Subsequently, when the second set time elapses, the drying liquid nozzle 51 starts moving from the outer peripheral portion of the wafer W toward the central portion thereof, as shown in FIG. After the drying liquid nozzle 51 reaches the center of the wafer W, IPA is applied to the center of the wafer W from the drying liquid nozzle 51 until a preset time (third set time) elapses. supplied. After that, when the third set time elapses, the supply of IPA from the drying liquid nozzle 51 to the wafer W is stopped by closing the valve 55 .

As described above, more foreign matter M is produced when the valve 55 is closed. Here, the inventor of the present application found that the amount of particles on the wafer W decreased as the closing speed of the valve 55 was decreased. Based on this knowledge, the valve 55 may be set to have a lower closing speed than opening speed. By setting in this way, the amount of the foreign matter M ejected onto the wafer W in the next replacement process can be reduced. For example, if valve 55 is a single-acting, normally closed valve, the closing speed of valve 55 can be adjusted using a speed controller that adjusts the air pressure to open valve 55 . Note that the valve 55 may be of a double-acting type. By using a double-acting valve as the valve 55, it is possible to set the closing speed slower than that of a single-acting valve.

<Modified Example of Second Movement Step>
Next, a modified example of the second movement step described above will be described with reference to FIG. FIG. 10 is a diagram showing an operation example of the second movement step according to the modification.

As shown in FIG. 10, the drying liquid nozzle 51 is moved to the outside of the wafer W past the outer periphery of the wafer W in the second movement step. In this case, the IPA containing the foreign matter M is discharged to the outside of the wafer W. As shown in FIG. Therefore, it is possible to more reliably prevent the foreign matter M from adhering to the upper surface of the wafer W. In order to prevent the IPA containing the foreign matter M from adhering to the gripping portion 31a (see FIG. 2), instead of the holding portion 31, a holding portion such as a vacuum chuck for holding the lower surface of the wafer W by suction is provided. may be used.

As described above, the substrate processing method according to the embodiment includes a processing liquid supply process (rinsing process as an example), a two-liquid supply process (two-liquid supply step in replacement process as an example), and a first transfer process. (as an example, a first movement step in the replacement process); and a second movement step (as an example, a second movement step in the replacement process). In the processing liquid supply step, a processing liquid (DIW as an example) is supplied to a substrate (wafer W as an example). In the two-liquid supply step, after the treatment liquid supply step, while supplying the treatment liquid to the substrate, a drying liquid (eg, IPA) having higher volatility than the treatment liquid is supplied to the substrate. The first moving step moves the ejection position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step. The second moving step is performed after the first moving step and after a preset time (for example, a first set time) has elapsed since the start of supply of the drying liquid to the substrate. is moved toward the outer periphery of the substrate.

As a result, for example, the drying liquid containing foreign matter can be discharged to the outer peripheral portion of the substrate. Therefore, the amount of foreign matter adhering to the substrate can be suppressed as compared with the case where the drying liquid containing the foreign matter is discharged to the central portion of the substrate. Therefore, the amount of particles adhering to the substrate can be reduced. In addition, for example, the consumption of the drying liquid can be suppressed as compared with the case where a dummy dispense is performed before the discharge of the drying liquid is started to discharge the foreign matter.

In the above-described embodiment, after the drying liquid is discharged to the central portion of the substrate in the two-liquid supply step, the discharging position of the drying liquid is moved toward the outer peripheral portion of the substrate in the second moving step. An example was described. However, the ejection position of the drying liquid before the second moving step does not necessarily have to be the central portion of the substrate, and may be radially inside the outer peripheral portion of the substrate.

Further, in the above-described embodiment, an example in which the ejection position of the drying liquid is moved while the drying liquid is being ejected in the second moving step has been described. Without being limited to this, for example, the ejection of the drying liquid may be stopped until the second moving step is completed.

Further, in the above-described embodiment, an example in which ejection of the treatment liquid is stopped after the ejection position of the treatment liquid reaches the outer peripheral portion of the substrate in the first moving step has been described. The treatment liquid is not limited to this, and the treatment liquid may continue to be discharged on the outer peripheral portion of the substrate.

The preset time is the portion of the piping through which the drying liquid circulates (supply line 567, for example) located downstream of the valve (valve 55, for example) that switches between discharging and non-discharging the drying liquid. and the flow rate of the drying liquid flowing through the piping.

For example, when the treatment liquid is water, there is a possibility that foreign matter and water come into contact with each other on the substrate, causing the foreign matter to adhere to the substrate and increase the amount of particles on the substrate. On the other hand, by setting the preset time as described above, it is possible to suppress the mixture of foreign matter and water, thereby suppressing the increase of particles.

The preset time may be set to a time shorter than the time required for foreign matter (for example, foreign matter M) generated from the valve to be discharged together with the drying liquid after the valve is opened. As a result, for example, when the treatment liquid is water, it is possible to suppress the increase in particles because foreign substances are prevented from being mixed with water.

The substrate processing method according to the embodiment may further include a third moving step (for example, a third moving step in the replacement process). The third moving step moves the ejection position of the drying liquid toward the central portion of the substrate after the second moving step. As a result, it is possible to form a liquid film of the drying liquid on the substrate while suppressing adhesion of foreign matter discharged together with the drying liquid to the substrate.

The substrate processing method according to the embodiment may further include a maintenance step (for example, a maintenance step in replacement processing). The maintaining step maintains the ejection position of the drying liquid at the outer peripheral portion of the substrate after the second moving step and before the third moving step. As a result, for example, it is possible to prevent the drying liquid containing foreign matter from being discharged onto the substrate other than the outer peripheral portion. Therefore, the amount of foreign matter adhering to the substrate can be suppressed more reliably.

The substrate processing method according to the embodiment may further include a rotation speed changing step (for example, a rotation speed changing step in replacement processing). The rotating speed changing step increases the rotating speed of the substrate in the maintaining step. As a result, for example, the foreign matter ejected onto the outer peripheral portion of the substrate can be quickly discharged to the outside of the substrate.

The substrate processing method according to the embodiment may further include a flow rate changing step (for example, a flow rate changing step in replacement processing). The changing flow rate step increases the flow rate of the drying liquid in the maintaining step. As a result, compared to the case where the drying liquid containing foreign matter is ejected at a low flow rate, the drying liquid containing foreign matter is less likely to remain on the substrate, so that the foreign matter discharging performance can be improved.

The second moving step may move the ejection position of the drying liquid to the outside of the substrate. In this case, the drying liquid containing foreign matter is discharged to the outside of the substrate. Therefore, it is possible to more reliably prevent foreign matter from adhering to the substrate.

Further, the substrate processing apparatus (processing unit 16 as an example) according to the embodiment includes a holding section (substrate holding mechanism 30 as an example), a first supply section (first supply section 40 as an example), a second It includes a supply unit (second supply unit 50 as an example) and a control unit (control unit 18 as an example). The holding unit rotatably holds a substrate (a wafer W as an example). The first supply unit includes a first nozzle (rinsing liquid nozzle 41 as an example) that supplies a processing liquid (DIW as an example) to the substrate held by the holding unit, and a first movement for moving the first nozzle. mechanism (as an example, the first moving mechanism 44). The second supply unit includes a second nozzle (eg, a drying liquid nozzle 51) that supplies a drying liquid (eg, IPA) having higher volatility than the processing liquid to the substrate held by the holding unit. , and a second moving mechanism (as an example, a second moving mechanism 54) that moves the second nozzle. The control unit controls the first supply unit and the second supply unit to execute the treatment liquid supply process, the two-liquid supply process, the first movement process, and the second movement process. The processing liquid supply process supplies the processing liquid to the substrate. In the two-liquid supply process, after the treatment liquid supply process, the drying liquid is supplied to the substrate while supplying the treatment liquid to the substrate. The first moving process moves the ejection position of the processing liquid toward the outer periphery of the substrate in the two-liquid supply process. In the second moving process, after the first moving process and after a preset time has passed since the supply of the drying liquid to the substrate is started, the ejection position of the drying liquid is moved to the outer peripheral portion of the substrate. move towards. As a result, the amount of particles adhering to the substrate can be reduced.

The second supply unit further includes a pipe that supplies the drying liquid to the second nozzle, and a valve that is provided in the pipe and switches between discharging and non-discharging of the drying liquid by opening and closing the pipe. The valve may be set to have a lower closing speed than opening speed. As a result, the amount of foreign matter generated from the valve can be reduced. Therefore, the amount of particles adhering to the substrate can be reduced.

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in many different forms. Also, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

W wafer 1 substrate processing system 2 loading/unloading station 3 processing station 4 control device 16 processing unit 18 control section 19 storage section 20 chamber 30 substrate holding mechanism 31 holding section 32 support section 33 drive section 40 first supply section 41 rinse liquid nozzle 42 Chemical liquid nozzle 43 First arm 44 First moving mechanism 45 Valve 46 Rinse liquid supply source 47 Valve 48 Chemical liquid supply source 50 Second supply unit 51 Drying liquid nozzle 53 Second arm 54 Second moving mechanism 55 Valve 56 Drying liquid supply source 467, 487, 567 supply line

Claims (9)

a processing liquid supply step of supplying the processing liquid to the substrate;
a two-liquid supply step of supplying a drying liquid having higher volatility than the treatment liquid to the substrate while supplying the treatment liquid to the substrate after the treatment liquid supply step;
a first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step;
After the first moving step and after a preset time has elapsed since the supply of the drying liquid to the substrate was started, the discharging position of the drying liquid is directed toward the outer peripheral portion of the substrate. a second moving step of moving by
The preset time is
Determined based on the volume of a portion of the piping through which the drying liquid circulates that is positioned downstream of a valve that switches between discharging and non-discharging the drying liquid, and the flow rate of the drying liquid flowing through the piping. A substrate processing method. a processing liquid supply step of supplying the processing liquid to the substrate;
a two-liquid supply step of supplying a drying liquid having higher volatility than the treatment liquid to the substrate while supplying the treatment liquid to the substrate after the treatment liquid supply step;
a first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step;
After the first moving step and after a preset time has elapsed since the supply of the drying liquid to the substrate was started, the discharging position of the drying liquid is directed toward the outer peripheral portion of the substrate. a second moving step of moving by
The preset time is
After a valve provided in a pipe through which the drying liquid flows and which switches between discharging and non-discharging the drying liquid is opened, the time required for the foreign matter generated from the valve to be discharged together with the drying liquid A substrate processing method in which the time is also set to a short time . a processing liquid supply step of supplying the processing liquid to the substrate;
a two-liquid supply step of supplying a drying liquid having higher volatility than the treatment liquid to the substrate while supplying the treatment liquid to the substrate after the treatment liquid supply step;
a first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step;
After the first moving step and after a preset time has elapsed since the supply of the drying liquid to the substrate was started, the discharging position of the drying liquid is directed toward the outer peripheral portion of the substrate. a second moving step of moving by
a third moving step of moving the ejection position of the drying liquid toward the central portion of the substrate after the second moving step;
A method of processing a substrate, comprising: 3. The substrate processing method according to claim 1, further comprising a third moving step of moving the ejection position of said drying liquid toward the central portion of said substrate after said second moving step. 5. The substrate processing method according to claim 3, further comprising: after said second moving step and before said third moving step, a maintaining step of maintaining a discharge position of said drying liquid at an outer peripheral portion of said substrate. 6. The substrate processing method according to claim 5, further comprising a rotating speed changing step of increasing the rotating speed of said substrate in said maintaining step. 7. The substrate processing method according to claim 5, further comprising a flow rate changing step of increasing a flow rate of said drying liquid in said maintaining step. The second moving step includes
5. The substrate processing method according to claim 1, wherein the ejection position of said drying liquid is moved to the outside of said substrate. a holding part that rotatably holds the substrate;
a first supply unit including a first nozzle that supplies a processing liquid to the substrate held by the holding unit; and a first moving mechanism that moves the first nozzle;
A second supply unit including a second nozzle for supplying a drying liquid having higher volatility than the processing liquid to the substrate held by the holding unit, and a second moving mechanism for moving the second nozzle. and,
By controlling the first supply unit and the second supply unit, a processing liquid supply process for supplying the processing liquid to the substrate, and after the processing liquid supply process, the processing liquid is supplied to the substrate while the processing liquid is supplied to the substrate. a two-liquid supply process of supplying a drying liquid to the substrate; a first movement process of moving a discharge position of the treatment liquid toward an outer peripheral portion of the substrate in the two-liquid supply process; and the first movement process. Later, after a preset time has elapsed since the supply of the drying liquid to the substrate was started, a second step of moving the ejection position of the drying liquid toward the outer peripheral portion of the substrate. and a control unit for executing movement processing ,
The second supply unit is
a pipe for supplying the drying liquid to the second nozzle;
a valve provided in the pipe for switching between discharge and non-discharge of the drying liquid by opening and closing the pipe;
further comprising
The substrate processing apparatus , wherein the closing speed of the valve is set lower than the opening speed .

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