JP7161990B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7161990B2 JP7161990B2 JP2019518876A JP2019518876A JP7161990B2 JP 7161990 B2 JP7161990 B2 JP 7161990B2 JP 2019518876 A JP2019518876 A JP 2019518876A JP 2019518876 A JP2019518876 A JP 2019518876A JP 7161990 B2 JP7161990 B2 JP 7161990B2
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- light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
Claims (6)
- 実装基板と、
前記実装基板上に実装され、ピーク波長が青色光の波長以下である第1の光を出射する複数のLED素子と、
前記第1の光により励起されて第2の光を発する蛍光体粒子、および二酸化チタンの粒子を含有し、前記実装基板上に充填されて前記複数のLED素子を一体的に封止する封止樹脂と、を有し、
前記第1および第2の光の混合により出射光として白色光が出射され、
前記二酸化チタンの粒子により、前記封止樹脂を透過したときに前記第1の光が前記第 2の光よりも大きく減衰し、
前記封止樹脂における前記二酸化チタンの粒子の重量パーセント濃度が1%~3%の範囲内であり、
前記出射光の全体に対する波長560nm以下の光の強度比が10%未満である、
ことを特徴とする発光装置。 - 前記二酸化チタンの粒子は前記封止樹脂内に分散しており、
前記蛍光体粒子は、前記封止樹脂内において、前記実装基板に近い側ほどより高い濃度で存在する、請求項1に記載の発光装置。 - 前記封止樹脂は、平均粒径が1μm~100μmの範囲内であるフィラー、および平均粒径が1nm~100nmの範囲内であるナノフィラーをさらに含有し、
前記封止樹脂は、前記複数のLED素子のそれぞれの上面、側面および斜め上方を覆い各LED素子から出射された前記第1の光が透過する前記蛍光体粒子の沈降層を有する、請求項2に記載の発光装置。 - 前記封止樹脂は、前記実装基板から遠い側に、前記二酸化チタンの粒子を前記実装基板に近い側よりも高い濃度で含有する樹脂層を有する、請求項2又は3に記載の発光装置。
- 前記第1の光は450nmの青色光であり、
前記第2の光は600nmの黄色光である、
請求項1~4の何れか一項に記載の発光装置。 - 出射される前記白色光は、ウミガメを引き寄せない、請求項1に記載の発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017099965 | 2017-05-19 | ||
JP2017099965 | 2017-05-19 | ||
PCT/JP2018/019170 WO2018212300A1 (ja) | 2017-05-19 | 2018-05-17 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018212300A1 JPWO2018212300A1 (ja) | 2020-03-19 |
JP7161990B2 true JP7161990B2 (ja) | 2022-10-27 |
Family
ID=64273939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019518876A Active JP7161990B2 (ja) | 2017-05-19 | 2018-05-17 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11177423B2 (ja) |
JP (1) | JP7161990B2 (ja) |
WO (1) | WO2018212300A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7492143B2 (ja) | 2021-07-02 | 2024-05-29 | 日亜化学工業株式会社 | 発光装置、灯具及び街路灯 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007018039A1 (ja) | 2005-08-05 | 2007-02-15 | Matsushita Electric Industrial Co., Ltd. | 半導体発光装置 |
JP2010283244A (ja) | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
JP2015188075A (ja) | 2014-03-14 | 2015-10-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2016054176A (ja) | 2014-09-03 | 2016-04-14 | 四国計測工業株式会社 | Led発光装置 |
JP2016066742A (ja) | 2014-09-25 | 2016-04-28 | 株式会社小糸製作所 | 発光装置 |
US20170045201A1 (en) | 2013-12-10 | 2017-02-16 | Gary W. Jones | Inverse visible spectrum light and broad spectrum light source for enhanced vision |
JP2017059754A (ja) | 2015-09-18 | 2017-03-23 | 東芝ライテック株式会社 | 発光装置 |
JP2018032692A (ja) | 2016-08-23 | 2018-03-01 | パナソニックIpマネジメント株式会社 | 発光装置、及び、照明装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4378242B2 (ja) | 2003-09-25 | 2009-12-02 | 株式会社小糸製作所 | 車両用灯具 |
US8547009B2 (en) * | 2009-07-10 | 2013-10-01 | Cree, Inc. | Lighting structures including diffuser particles comprising phosphor host materials |
TW201320412A (zh) * | 2011-11-14 | 2013-05-16 | Evergreen Optronics Inc | 發光二極體封裝 |
BR102016004795B1 (pt) * | 2015-03-05 | 2021-09-08 | Nichia Corporation | Diodo emissor de luz |
JP2018041843A (ja) * | 2016-09-07 | 2018-03-15 | パナソニックIpマネジメント株式会社 | 発光装置、及び、照明装置 |
-
2018
- 2018-05-17 US US16/615,095 patent/US11177423B2/en active Active
- 2018-05-17 JP JP2019518876A patent/JP7161990B2/ja active Active
- 2018-05-17 WO PCT/JP2018/019170 patent/WO2018212300A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007018039A1 (ja) | 2005-08-05 | 2007-02-15 | Matsushita Electric Industrial Co., Ltd. | 半導体発光装置 |
JP2010283244A (ja) | 2009-06-05 | 2010-12-16 | Mitsubishi Chemicals Corp | 半導体発光装置、照明装置、及び画像表示装置 |
US20170045201A1 (en) | 2013-12-10 | 2017-02-16 | Gary W. Jones | Inverse visible spectrum light and broad spectrum light source for enhanced vision |
JP2015188075A (ja) | 2014-03-14 | 2015-10-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2016054176A (ja) | 2014-09-03 | 2016-04-14 | 四国計測工業株式会社 | Led発光装置 |
JP2016066742A (ja) | 2014-09-25 | 2016-04-28 | 株式会社小糸製作所 | 発光装置 |
JP2017059754A (ja) | 2015-09-18 | 2017-03-23 | 東芝ライテック株式会社 | 発光装置 |
JP2018032692A (ja) | 2016-08-23 | 2018-03-01 | パナソニックIpマネジメント株式会社 | 発光装置、及び、照明装置 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2018212300A1 (ja) | 2020-03-19 |
US20200212273A1 (en) | 2020-07-02 |
US11177423B2 (en) | 2021-11-16 |
WO2018212300A1 (ja) | 2018-11-22 |
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