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JP6917544B2 - Power converter - Google Patents

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JP6917544B2
JP6917544B2 JP2017146160A JP2017146160A JP6917544B2 JP 6917544 B2 JP6917544 B2 JP 6917544B2 JP 2017146160 A JP2017146160 A JP 2017146160A JP 2017146160 A JP2017146160 A JP 2017146160A JP 6917544 B2 JP6917544 B2 JP 6917544B2
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leakage current
power conversion
gate resistance
control method
switching
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JP2019030094A (en
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和章 東
和章 東
安井 健治
健治 安井
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Panasonic Intellectual Property Management Co Ltd
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Description

本発明は電源もしくは発電機から供給された電力を、負荷機器を駆動もしくは系統連系する為の電力変換回路を備え、効率の良い運転をするための電力変換装置に関するものである。 The present invention relates to a power conversion device provided with a power conversion circuit for driving or grid-connecting a load device from the power supplied from a power source or a generator, and for efficient operation.

電力変換装置の変換効率の向上もしくは信頼性や安全性の向上の為、発電機出力や負荷機器の運転状態の状況に応じて、電流や電圧、温度等をセンシングし、回路定数や制御方法の調整を行なってきた。(例えば、特許文献1参照)。 In order to improve the conversion efficiency or reliability and safety of the power converter, the current, voltage, temperature, etc. are sensed according to the generator output and the operating status of the load equipment, and the circuit constants and control methods are used. I've been making adjustments. (See, for example, Patent Document 1).

特開2009−207263号公報JP-A-2009-207263

しかしながら、前記従来のインバータなどの電力変換装置においては、システムの最大出力時における漏れ電流を、規定値以下に抑える為、スイッチング素子のゲート抵抗値を設定するものであった。 However, in the power conversion device such as the conventional inverter, the gate resistance value of the switching element is set in order to suppress the leakage current at the maximum output of the system to a specified value or less.

また変調制御方式も漏れ電流を低減させる為、2レベル変調方式を選定していた。このため、システム出力が低い場合、漏れ電流が低いにも関わらず、ゲート抵抗及び変調制御方式が固定の為、余分なスイッチング損失が発生してしまう課題を有していた。 Also, as for the modulation control method, a two-level modulation method was selected in order to reduce the leakage current. Therefore, when the system output is low, there is a problem that an extra switching loss occurs because the gate resistance and the modulation control method are fixed even though the leakage current is low.

本発明は、前記の課題を解決するもので、漏れ電流が低い場合にゲート抵抗、または変調制御方式を切り替え、電力変換効率の向上を可能とした電力変換装置を提供することを目的とする。 An object of the present invention is to solve the above-mentioned problems, and to provide a power conversion device capable of improving power conversion efficiency by switching a gate resistance or a modulation control method when a leakage current is low.

前記従来の課題を解決するために本発明の電力変換装置は、システム出力最大時の条件でゲート抵抗値を設定し、低出力時においては漏れ電流値が低い為、既存のゲート抵抗値より低い抵抗値に切り替えてスイッチング損失を低減し、電力変換効率を向上させる。また漏れ電流がしきい値より高い場合は2レベル変調方式で制御を行い漏れ電流の低減を図り、しきい値より低い場合は3レベル変調方式に切り替えて電力変換効率の向上を行なうものである。 In order to solve the above-mentioned conventional problems, the power conversion device of the present invention sets the gate resistance value under the condition at the maximum system output, and the leakage current value is low at the time of low output, so that it is lower than the existing gate resistance value. Switch to the resistance value to reduce switching loss and improve power conversion efficiency. If the leakage current is higher than the threshold value, it is controlled by the 2-level modulation method to reduce the leakage current, and if it is lower than the threshold value, it is switched to the 3-level modulation method to improve the power conversion efficiency. ..

本発明の電力変換装置は、発電機出力や負荷機器の出力が低い場合において、電力変換効率を向上させることができる。 The power conversion device of the present invention can improve the power conversion efficiency when the output of the generator or the output of the load device is low.

本発明の実施の形態における電力変換装置の機能ブロック図Functional block diagram of the power conversion device according to the embodiment of the present invention 本発明の実施の形態における電力変換装置のゲート抵抗選択部のブロック図Block diagram of the gate resistance selection unit of the power conversion device according to the embodiment of the present invention. 本発明の実施の形態における漏れ電流と電力変換時に発生する損失の関係、及びゲート抵抗/変調制御方式の切り替えの効果を示す図The figure which shows the relationship between the leakage current and the loss which occurs at the time of power conversion in embodiment of this invention, and the effect of switching of a gate resistance / modulation control method. 本発明の実施の形態におけるゲート抵抗/変調制御方式の切り替え時の漏れ電流しきい値のヒステリシスを示す図The figure which shows the hysteresis of the leakage current threshold value at the time of switching of a gate resistance / modulation control method in embodiment of this invention. 本発明の実施の形態1における3レベル変調方式のスイッチングパターンを示す図The figure which shows the switching pattern of the 3 level modulation system in Embodiment 1 of this invention. 本発明の実施の形態1における2レベル変調方式のスイッチングパターンを示す図The figure which shows the switching pattern of the two-level modulation system in Embodiment 1 of this invention. 従来の電力変換装置の機能ブロック図Functional block diagram of a conventional power converter

第1の発明は、交流電源からの入力を直流に整流する整流器と、前記交流電源からの入力からの漏れ電流を検知する漏れ電流検出部と、前記直流をスイッチング素子により交流に変換する電力変換装置において、前記漏れ電流検出部により検出された漏れ電流値の、所定値に対する大小に応じて、前記スイッチング素子へのゲート抵抗の抵抗値を切り替えることにより、低出力時の電力変換効率を向上させることができる。 The first invention is a rectifier that rectifies an input from an AC power supply to a direct current, a leakage current detection unit that detects a leakage current from the input from the AC power supply, and a power conversion that converts the direct current into an alternating current by a switching element. In the apparatus, the power conversion efficiency at low output is improved by switching the resistance value of the gate resistance to the switching element according to the magnitude of the leakage current value detected by the leakage current detection unit with respect to a predetermined value. be able to.

第2の発明は、特に第1の発明において、ゲート抵抗が2つ以上の異なるゲート抵抗値を有することにより、低出力時の電力変換効率を向上させることができる。 In the second invention, particularly in the first invention, the power conversion efficiency at low output can be improved by having the gate resistance having two or more different gate resistance values.

第3の発明は、特に第1の発明において、検出された漏れ電流値の、所定値に対する大小に応じて、変調制御方式を切り替えることにより、低出力時の電力変換効率を向上させることができる。 According to the third invention, particularly in the first invention, the power conversion efficiency at low output can be improved by switching the modulation control method according to the magnitude of the detected leakage current value with respect to a predetermined value. ..

第4の発明は、特に第3の発明において、変調制御方式は2レベル変調方式と3レベル変調方式との変調制御方式であることにより、低出力時の電力変換効率を向上させることができる。 According to the fourth invention, particularly in the third invention, the modulation control method is a modulation control method of a two-level modulation method and a three-level modulation method, so that the power conversion efficiency at the time of low output can be improved.

第5の発明は、ゲート抵抗及び変調制御方式の切り替えを、同一の漏れ電流のしきい値に対する大小で行うことにより、制御を簡略化することができる。 In the fifth invention, the control can be simplified by switching the gate resistance and the modulation control method with respect to the same leakage current threshold value.

第6の発明は、ゲート抵抗及び変調制御方式の切り替えのしきい値にヒステリシスを備えることにより、漏れ電流の急激な変動に対しても誤動作することなく、切り替えを行なうことができる。 According to the sixth invention, by providing hysteresis in the threshold value for switching the gate resistance and the modulation control method, switching can be performed without malfunction even with a sudden fluctuation of the leakage current.

以下、本発明の実施の形態について、図面を参照しながら説明する。なお、この実施の形態によって本発明が限定されるものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to this embodiment.

(実施の形態1)
図1は、本発明の実施の形態1における機能ブロック図を示すものである。
図1の漏れ電流検出部8で漏れ電流しきい値を下回ったときに、制御部からゲート抵抗切り替え部5を制御し、ゲート抵抗を可変させる。
(Embodiment 1)
FIG. 1 shows a functional block diagram according to the first embodiment of the present invention.
When the leakage current detection unit 8 in FIG. 1 falls below the leakage current threshold value, the control unit controls the gate resistance switching unit 5 to change the gate resistance.

図2は本発明の実施の形態1の係るゲート抵抗切り替え部のブロック図を示すものである。
システム最大出力の場合は抵抗Aを通って半導体スイッチ素子4の駆動が行なわれるが、低出力時には切り替え回路により抵抗Bへ切り替えられる。この場合、抵抗Aより抵抗Bの方が抵抗値は低く設定する。
FIG. 2 shows a block diagram of the gate resistance switching portion according to the first embodiment of the present invention.
In the case of the maximum output of the system, the semiconductor switch element 4 is driven through the resistor A, but when the output is low, the semiconductor switch element 4 is switched to the resistor B by the switching circuit. In this case, the resistance value of the resistor B is set lower than that of the resistor A.

また図1のPWM信号発生部6により変調制御方式の切り替えを行なう。 Further, the PWM signal generation unit 6 of FIG. 1 switches the modulation control method.

図3は本発明の実施の形態1における漏れ電流と電力変換時に発生する損失の関係、及びゲート抵抗/変調制御方式の切り替えの効果を示す図である。ゲート抵抗及び変調制御方式の切り替えを同じ漏れ電流のしきい値で設定する。
ゲート抵抗Bの抵抗値は3レベル変調方式で漏れ電流値が規定値以下になるように設定する。このことにより、ゲート抵抗値の切り替えを行わない場合に比べ、電力変換時の損失を低減することができる。
FIG. 3 is a diagram showing the relationship between the leakage current and the loss generated during power conversion in the first embodiment of the present invention, and the effect of switching the gate resistance / modulation control method. Set the gate resistance and modulation control method switching with the same leakage current threshold.
The resistance value of the gate resistor B is set so that the leakage current value is equal to or less than the specified value by the 3-level modulation method. As a result, the loss during power conversion can be reduced as compared with the case where the gate resistance value is not switched.

図4は本発明の実施の形態1におけるゲート抵抗/変調制御方式の切り替え時における漏れ電流しきい値のヒステリシスを示す図である。ゲート抵抗及び変調制御方式の切り替えを同じ漏れ電流のしきい値で設定する。 FIG. 4 is a diagram showing the hysteresis of the leakage current threshold value at the time of switching the gate resistance / modulation control method according to the first embodiment of the present invention. Set the gate resistance and modulation control method switching with the same leakage current threshold.

図5は3レベル変調方式のスイッチングパターンを示す図である。また、図6は2レベル変調方式のスイッチングパターンを示す図である。当該実施の形態1における変調方式の変化はこれらの図に示すような変調にて行われる。 FIG. 5 is a diagram showing a switching pattern of the three-level modulation method. Further, FIG. 6 is a diagram showing a switching pattern of the two-level modulation method. The change of the modulation method in the first embodiment is performed by the modulation as shown in these figures.

以上のように、本発明にかかる電力変換装置は、漏れ電流値によってゲート抵抗及び変調制御方式を切り替え低出力時の電力変換効率を向上させることが可能となる為、電力変換機器を使用している民生や産業分野のあらゆる商品に適用できる。 As described above, the power conversion device according to the present invention can improve the power conversion efficiency at low output by switching the gate resistance and the modulation control method according to the leakage current value. Therefore, the power conversion device is used. It can be applied to all products in the consumer and industrial fields.

1 交流電源もしくは発電機
2 コンバータもしくは整流器
3 平滑用コンデンサ
4 半導体スイッチ素子
5 ゲート抵抗切り替え部
6 PWM信号発生部
7 システムの制御部
8 漏れ電流検出部
9 漏れ電流センシング部
10 系統もしくは負荷機器
1 AC power supply or generator 2 Converter or rectifier 3 Smoothing capacitor 4 Semiconductor switch element 5 Gate resistance switching unit 6 PWM signal generator 7 System control unit 8 Leakage current detector 9 Leakage current sensing unit 10 System or load device

Claims (5)

交流電源からの入力を直流に整流する整流器と、前記交流電源からの入力からの漏れ電流を検知する漏れ電流検出部と、前記直流をスイッチング素子により交流に変換する電力変換装置において、前記漏れ電流検出部により検出された漏れ電流値の、所定値に対する大小に応じて、前記スイッチング素子へのゲート抵抗の抵抗値および変調制御方式を切り替えることを特徴とする電力変換装置。 In the rectifier that rectifies the input from the AC power supply to DC, the leakage current detection unit that detects the leakage current from the input from the AC power supply, and the power conversion device that converts the DC to AC by the switching element, the leakage current A power conversion device characterized in that the resistance value of the gate resistance to the switching element and the modulation control method are switched according to the magnitude of the leakage current value detected by the detection unit with respect to a predetermined value. 前記ゲート抵抗は、2つ以上の異なるゲート抵抗値を有することを特徴とする請求項1の電力変換装置。 The power conversion device according to claim 1, wherein the gate resistance has two or more different gate resistance values. 前記変調制御方式は2レベル変調方式と3レベル変調方式との変調制御方式であることを特徴とする請求項1の電力変換装置。 The power conversion device according to claim 1 , wherein the modulation control method is a modulation control method of a two-level modulation method and a three-level modulation method. ゲート抵抗及び変調制御方式の切り替えを、同一の漏れ電流のしきい値に対する大小で行うことを特徴とした請求項2に記載の電力変換装置。 The power conversion device according to claim 2 , wherein the gate resistance and the modulation control method are switched by a magnitude with respect to the same leakage current threshold value. 前記ゲート抵抗及び変調制御方式の切り替えのしきい値にヒステリシスを備えたことを特徴とした請求項4に記載の電力変換装置。 The power conversion device according to claim 4 , wherein the gate resistance and the threshold value for switching the modulation control method are provided with hysteresis.
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US7622823B2 (en) * 2006-07-18 2009-11-24 Toshiba International Corporation Uninterruptible power supply with low leakage current
JP2009207263A (en) * 2008-02-27 2009-09-10 Toshiba Elevator Co Ltd Power converter
JP2009296798A (en) * 2008-06-05 2009-12-17 Fuji Electric Systems Co Ltd Power conversion apparatus
JP5468394B2 (en) * 2010-01-13 2014-04-09 株式会社東芝 Grid interconnection inverter

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