JP6846879B2 - ヒートシンクの製造方法 - Google Patents
ヒートシンクの製造方法 Download PDFInfo
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- JP6846879B2 JP6846879B2 JP2016113206A JP2016113206A JP6846879B2 JP 6846879 B2 JP6846879 B2 JP 6846879B2 JP 2016113206 A JP2016113206 A JP 2016113206A JP 2016113206 A JP2016113206 A JP 2016113206A JP 6846879 B2 JP6846879 B2 JP 6846879B2
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- heat sink
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- 239000002245 particle Substances 0.000 claims description 105
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 100
- 229910052799 carbon Inorganic materials 0.000 claims description 64
- 239000002131 composite material Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- 229910002804 graphite Inorganic materials 0.000 claims description 19
- 239000010439 graphite Substances 0.000 claims description 19
- 238000005242 forging Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 description 22
- 229920000049 Carbon (fiber) Polymers 0.000 description 13
- 239000004917 carbon fiber Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000005219 brazing Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000002041 carbon nanotube Substances 0.000 description 7
- 229910021393 carbon nanotube Inorganic materials 0.000 description 7
- 229910021389 graphene Inorganic materials 0.000 description 7
- 229910021382 natural graphite Inorganic materials 0.000 description 7
- 229910021383 artificial graphite Inorganic materials 0.000 description 6
- 238000001125 extrusion Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002134 carbon nanofiber Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- -1 and further Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/26—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
ベースプレート部に複数のフィン部が前記ベースプレート部に対して突出した状態に一体形成されており、
前記フィン部中に存在する炭素粒子が前記ベースプレート部に対する前記フィン部の突出方向に配向しているヒートシンク。
図1に示した第1実施形態のヒートシンク1Aを次のように製造した。
図4に示した第2実施形態のヒートシンク1Bを次のように製造した。
2:ベースプレート部
3:フィン部
3a:ストレートフィン部
3b:ピンフィン部
5:炭素粒子
10:冷却器
20:絶縁基板
30:熱間鍛造用金型
35:鍛造素材
P:フィン部の突出方向
Claims (3)
- アルミニウムと炭素粒子との複合材製であり、
ベースプレート部に複数のフィン部が前記ベースプレート部に対して突出した状態に一体形成されており、
前記フィン部中に存在する炭素粒子が前記ベースプレート部に対する前記フィン部の突出方向に配向しているヒートシンクの製造方法であって、
ヒートシンクを、アルミニウムと炭素粒子との複合材からなる鍛造素材を熱間鍛造加工することにより形成するヒートシンクの製造方法。 - 前記炭素粒子として鱗片状黒鉛粒子が用いられている請求項1記載のヒートシンクの製造方法。
- アルミニウムと鱗片状黒鉛粒子との複合材製であり、
ベースプレート部に複数のフィン部が前記ベースプレート部に対して突出した状態に一体形成されており、
前記フィン部中に存在する鱗片状黒鉛粒子が前記ベースプレート部に対する前記フィン部の突出方向に配向しているヒートシンクの製造方法であって、
ヒートシンクを、アルミニウムと鱗片状黒鉛粒子との複合材からなるビレットを押出加工することにより得られた押出型材で形成するヒートシンクの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016113206A JP6846879B2 (ja) | 2016-06-07 | 2016-06-07 | ヒートシンクの製造方法 |
PCT/JP2017/020101 WO2017212982A1 (ja) | 2016-06-07 | 2017-05-30 | ヒートシンク及び冷却器 |
US16/307,596 US20190311970A1 (en) | 2016-06-07 | 2017-05-30 | Heat sink and cooling device |
CN201780031096.XA CN109155294A (zh) | 2016-06-07 | 2017-05-30 | 散热器和冷却器 |
DE112017002842.6T DE112017002842T5 (de) | 2016-06-07 | 2017-05-30 | Kühlkörper und Kühleinrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016113206A JP6846879B2 (ja) | 2016-06-07 | 2016-06-07 | ヒートシンクの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017220539A JP2017220539A (ja) | 2017-12-14 |
JP6846879B2 true JP6846879B2 (ja) | 2021-03-24 |
Family
ID=60578707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016113206A Active JP6846879B2 (ja) | 2016-06-07 | 2016-06-07 | ヒートシンクの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190311970A1 (ja) |
JP (1) | JP6846879B2 (ja) |
CN (1) | CN109155294A (ja) |
DE (1) | DE112017002842T5 (ja) |
WO (1) | WO2017212982A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10791651B2 (en) * | 2016-05-31 | 2020-09-29 | Carbice Corporation | Carbon nanotube-based thermal interface materials and methods of making and using thereof |
TWI755492B (zh) | 2017-03-06 | 2022-02-21 | 美商卡爾拜斯有限公司 | 基於碳納米管的熱界面材料及其製造和使用方法 |
JP7170457B2 (ja) * | 2017-12-27 | 2022-11-14 | 昭和電工株式会社 | 組電池装置 |
JP7033470B2 (ja) * | 2018-03-08 | 2022-03-10 | 昭和電工株式会社 | ヒートシンクの製造方法 |
JP7007972B2 (ja) * | 2018-03-29 | 2022-01-25 | 昭和電工株式会社 | 放熱フィン、放熱器及び放熱器の製造方法 |
JP7049951B2 (ja) * | 2018-07-11 | 2022-04-07 | 昭和電工株式会社 | 積層材 |
DE102018218831B4 (de) * | 2018-11-05 | 2021-09-30 | Robert Bosch Gmbh | Kühlkörper sowie Kühlanordnung mit Kühlkörper |
DE102019102505B4 (de) * | 2019-01-31 | 2021-09-30 | R. Stahl Schaltgeräte GmbH | Explosionsgeschützte Vorrichtung mit zünddurchschlag-sicherem Gasströmungspfad und Kühlkörper |
KR102219180B1 (ko) * | 2019-03-22 | 2021-02-23 | 부경대학교 산학협력단 | 알루미늄계 클래드 형재의 제조 방법 및 이를 이용하여 제조된 알루미늄계 클래드 형재 |
KR102266847B1 (ko) * | 2019-04-15 | 2021-06-21 | 부경대학교 산학협력단 | 복합재료 제조를 위한 소성 가공용 빌렛의 제조방법 및 이에 의해 제조된 빌렛 |
KR102228431B1 (ko) * | 2019-04-16 | 2021-03-16 | 부경대학교 산학협력단 | 알루미늄계 클래드 방열판의 제조방법 및 이에 의해 제조된 알루미늄계 클래드 방열판 |
JP7404845B2 (ja) * | 2019-12-17 | 2023-12-26 | 株式会社レゾナック | ヒートシンク |
DE102020205686A1 (de) | 2020-05-06 | 2021-11-11 | Robert Bosch Gesellschaft mit beschränkter Haftung | Elektronikvorrichtung |
CN112366188B (zh) * | 2020-08-24 | 2023-07-25 | 杰群电子科技(东莞)有限公司 | 一种具有散热齿片的半导体器件封装结构及封装方法 |
CN112695221A (zh) * | 2020-12-19 | 2021-04-23 | 无锡盛旭复合材料有限公司 | 一种多层石墨烯增强铝基复合材料的制备方法 |
JP7603279B2 (ja) | 2021-03-29 | 2024-12-20 | 株式会社アカネ | ヒートシンク部材 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5363418B2 (ja) * | 2010-05-17 | 2013-12-11 | 日精樹脂工業株式会社 | 高熱伝導性複合材料の製造方法 |
JP5917992B2 (ja) | 2012-04-19 | 2016-05-18 | 昭和電工株式会社 | 絶縁基板の製造方法 |
JP5989465B2 (ja) | 2012-09-05 | 2016-09-07 | 昭和電工株式会社 | 絶縁基板の製造方法 |
JP2014141746A (ja) * | 2012-12-27 | 2014-08-07 | Shibaura Institute Of Technology | 放熱用複合材及びその製造方法並びに放熱用複合材製造用の混合粉 |
JP6118583B2 (ja) | 2013-02-20 | 2017-04-19 | 昭和電工株式会社 | 絶縁基板 |
JP6050140B2 (ja) | 2013-02-20 | 2016-12-21 | 昭和電工株式会社 | 絶縁基板 |
JP6176845B2 (ja) * | 2013-09-06 | 2017-08-09 | 住友精密工業株式会社 | 高熱伝導板 |
EP3089209B1 (en) * | 2013-12-25 | 2019-12-04 | Mitsubishi Materials Corporation | Substrate for power module, method for manufacturing same, and power module |
JP6430807B2 (ja) | 2014-12-18 | 2018-11-28 | 赤武エンジニアリング株式会社 | フレコンバッグ排出装置 |
-
2016
- 2016-06-07 JP JP2016113206A patent/JP6846879B2/ja active Active
-
2017
- 2017-05-30 CN CN201780031096.XA patent/CN109155294A/zh active Pending
- 2017-05-30 WO PCT/JP2017/020101 patent/WO2017212982A1/ja active Application Filing
- 2017-05-30 DE DE112017002842.6T patent/DE112017002842T5/de not_active Withdrawn
- 2017-05-30 US US16/307,596 patent/US20190311970A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE112017002842T5 (de) | 2019-02-28 |
JP2017220539A (ja) | 2017-12-14 |
WO2017212982A1 (ja) | 2017-12-14 |
US20190311970A1 (en) | 2019-10-10 |
CN109155294A (zh) | 2019-01-04 |
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