JP6807845B2 - エッチング液組成物及びエッチング方法 - Google Patents
エッチング液組成物及びエッチング方法 Download PDFInfo
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- JP6807845B2 JP6807845B2 JP2017536436A JP2017536436A JP6807845B2 JP 6807845 B2 JP6807845 B2 JP 6807845B2 JP 2017536436 A JP2017536436 A JP 2017536436A JP 2017536436 A JP2017536436 A JP 2017536436A JP 6807845 B2 JP6807845 B2 JP 6807845B2
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- Prior art keywords
- based layer
- etching
- copper
- etching solution
- titanium
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- 238000005530 etching Methods 0.000 title claims description 104
- 239000000203 mixture Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 17
- 239000007788 liquid Substances 0.000 title description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 53
- 229910052802 copper Inorganic materials 0.000 claims description 52
- 239000010949 copper Substances 0.000 claims description 52
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 43
- 239000010936 titanium Substances 0.000 claims description 43
- 229910052719 titanium Inorganic materials 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 claims description 14
- 150000003839 salts Chemical class 0.000 claims description 11
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
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- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 7
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- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
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- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
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- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
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- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
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- 239000000654 additive Substances 0.000 description 2
- 229960000643 adenine Drugs 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
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- 229940053200 antiepileptics fatty acid derivative Drugs 0.000 description 2
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- 239000003093 cationic surfactant Substances 0.000 description 2
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
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- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
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- 125000004185 ester group Chemical group 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical class CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Description
本発明で使用する基体は、当該エッチングの技術分野で一般に使用されているものを使用することができる。例えば、ガラス、シリコンなどが挙げられる。
表1に示す配合でエッチング液組成物を配合し、実施例組成物No.1〜11を得た。実施例組成物において、表1に示す(A)〜(D)成分を除き残部は水である。
なお、実施例組成物No.5は参考例である。
表2に示す配合でエッチング液組成物を配合し、比較組成物1〜3を得た。比較例組成物において、表2に示す(A)〜(D)成分を除き残部は水である。
ガラス基板上にチタン(30nm)、銅(400nm)の順に積層した基体上にポジ型液状レジストを用いて線幅10μm、開口部100μmのレジストパターンを形成した基板を10mm×10mmに切断して小板片を複数枚用意し、これらをテストピースとした。このテストピースに対して銅を所定濃度溶解させた実施例組成物No.1〜13を使用して35℃の条件でディップ法によるパターンエッチングを行った。エッチング処理時間は、各々のエッチング液組成物において、配線間の銅残渣が無くなったことを目視にて確認できた時間だけ実施した。エッチング処理時間はいずれも3分以内であった。
実施例2と同様の方法を用いて、比較組成物1〜3を用いてパターンエッチングを行った。
実施例2及び比較例1によって得られたテストピースについて、該テストピースの上部を光学顕微鏡で確認することで細線が形成させているか確認し、さらにFE−SEMを用いて断面の形状を確認した。
評価に当たり、各エッチング液組成物中の銅濃度を所定濃度としたときにエッチング処理したテストピースを評価した。結果を表3〜5に示す。細線上部の幅よりも細線下部の幅が大きい断面形状となっている場合を○、細線上部の幅よりも細線下部の幅が小さい断面形状となっている場合を×とした。また、配線の片側の細り幅が1.0μm未満である場合を++、1.0μm以上〜2.0μm未満である場合を+、2.0μm以上である場合及び細線を形成できなかった場合を−−とした。
※2:エッチング速度を制御することができず、数秒で被エッチング材の全てが溶解してしまい、配線を形成することができなかった。
Claims (5)
- 基体上に位置し、少なくとも1種のチタン系層及び少なくとも1種の銅系層を含む積層体のチタン系層と銅系層を一括でエッチングするためのエッチング液組成物であって、
(A)過酸化水素0.1〜15質量%;
(B)フッ化物イオン供給源0.01〜1質量%;
(C)下記一般式(I)で表される有機スルホン酸化合物またはその塩を、有機スルホン酸換算で1.0〜20質量%;
(D)アゾール系化合物及び窒素原子を1つ以上含み3つの2重結合を有する複素6員環を構造中に有する化合物から選ばれる少なくとも1種の化合物0.01〜5質量%、及び
(E)水
を含むエッチング液組成物であって、前記有機スルホン酸化合物がメタンスルホン酸、2−ヒドロキシエタンスルホン酸、ベンゼンスルホン酸、及びp−トルエンスルホン酸からなる群から選ばれる少なくとも1種である、エッチング液組成物。
- 前記(C)が2−ヒドロキシエタンスルホン酸、ベンゼンスルホン酸及びこれらの塩からなる群から選ばれる少なくとも1種の化合物である、請求項1に記載のエッチング液組成物。
- 前記(D)が1,2,4−トリアゾール、3−アミノ−1H−トリアゾール、1H―テトラゾール、5―メチル−1H―テトラゾール及び5−アミノテトラゾールからなる群から選ばれる少なくとも1つの化合物である、請求項1または2に記載のエッチング液組成物。
- 基体上に位置し、少なくとも1種のチタン系層及び少なくとも1種の銅系層を含む積層体のチタン系層と銅系層を一括でエッチングするためのエッチング方法であって、請求項1〜3のいずれか1項に記載のエッチング液組成物を用いることを含むエッチング方法。
- 請求項1〜3のいずれか1項に記載のエッチング液組成物を用いて、基体上に位置し、少なくとも1種のチタン系層及び少なくとも1種の銅系層を含む積層体である被エッチング材のチタン系層と銅系層を一括でエッチングした後、該エッチング液組成物を再び用いて、別の被エッチング材を一括でエッチングすることを含む、エッチング方法。
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JP3974305B2 (ja) * | 1999-06-18 | 2007-09-12 | エルジー フィリップス エルシーディー カンパニー リミテッド | エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器 |
KR100839428B1 (ko) | 2007-05-17 | 2008-06-19 | 삼성에스디아이 주식회사 | 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법 |
KR20120003874A (ko) * | 2009-03-30 | 2012-01-11 | 도레이 카부시키가이샤 | 도전막 제거제 및 도전막 제거 방법 |
TWI518206B (zh) * | 2010-01-28 | 2016-01-21 | 三菱瓦斯化學股份有限公司 | 銅/鈦系多層薄膜用的蝕刻液 |
KR101608873B1 (ko) | 2010-03-18 | 2016-04-05 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
KR101825493B1 (ko) * | 2010-04-20 | 2018-02-06 | 삼성디스플레이 주식회사 | 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 |
JP6101421B2 (ja) * | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
KR102048022B1 (ko) * | 2012-12-18 | 2019-12-02 | 주식회사 동진쎄미켐 | 금속막 식각액 조성물 및 이를 이용한 식각 방법 |
JP6464578B2 (ja) * | 2013-08-01 | 2019-02-06 | 三菱瓦斯化学株式会社 | プリント配線板の製造方法 |
CN106661663A (zh) * | 2014-02-25 | 2017-05-10 | 恩特格里斯公司 | 用于选择性去除贵金属的湿基制剂 |
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2016
- 2016-08-23 JP JP2017536436A patent/JP6807845B2/ja active Active
- 2016-08-23 US US15/754,020 patent/US20180237923A1/en not_active Abandoned
- 2016-08-23 KR KR1020187003340A patent/KR102500812B1/ko active Active
- 2016-08-23 CN CN201680049206.0A patent/CN108028198B/zh active Active
- 2016-08-23 WO PCT/JP2016/074475 patent/WO2017033915A1/ja active Application Filing
- 2016-08-26 TW TW105127504A patent/TWI700746B/zh active
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CN108028198B (zh) | 2022-10-18 |
WO2017033915A1 (ja) | 2017-03-02 |
US20180237923A1 (en) | 2018-08-23 |
JPWO2017033915A1 (ja) | 2018-06-14 |
KR20180048595A (ko) | 2018-05-10 |
TW201724262A (zh) | 2017-07-01 |
CN108028198A (zh) | 2018-05-11 |
KR102500812B1 (ko) | 2023-02-16 |
TWI700746B (zh) | 2020-08-01 |
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