JP6772644B2 - Optical module - Google Patents

Description

The present invention relates to an optical module.

An optical module in which a semiconductor light emitting element such as a semiconductor laser element is arranged in a package is known (see, for example, Patent Documents 1 to 4). Such an optical module is used as a light source for various devices such as a display device, an optical pickup device, and an optical communication device.

In the above optical module, it is necessary to appropriately adjust the intensity of the light emitted from the semiconductor laser element. The intensity of light can be adjusted by receiving a part of the light emitted from the laser element by the light receiving element, checking the intensity of the light, and feeding it back to the electric power supplied to the laser element. As a structure for sending a part of the light emitted from the laser element to the light receiving element, for example, a structure in which a part of the light emitted from the laser element is taken out by an optical component such as a filter or a mirror and sent to the light receiving element is considered. (See, for example, Patent Documents 1 and 2).

JP-A-2009-93101 JP-A-2007-328895 JP-A-2007-17925 JP-A-2007-65600

Due to the improvement in the performance of the device in which the optical module is used and the expansion of applications as described above, more precise adjustment of the intensity of the light emitted from the laser element is required. Specifically, for example, for the purpose of improving the color reproducibility of the display device, it is required to adjust the intensity of the emitted light with higher accuracy for the laser element that emits each of the red, green, and blue lights. Has been done.

Therefore, one of the purposes is to provide an optical module capable of adjusting the intensity of light emitted from a laser element with high accuracy.

An optical module according to the present invention includes a light forming portion that forms light, and a protective member that has an exit window that transmits light from the light forming portion and is arranged so as to surround the light forming portion. The light forming portion is mounted on the base member and the mounting surface of the base member, and has an end face light emitting type laser element including a semiconductor laminate, and a spot size of light emitted from the base member mounted on the base member. It includes a lens to be converted, and a light receiving element mounted on a base member, arranged between the laser element and the lens in the light emitting direction of the laser element, and directly receiving light from the laser element. In the laser element, the angle formed by the traveling direction of light from the laser element and the mounting surface is 10 ° or less, and the angle formed by the surface perpendicular to the stacking direction of the semiconductor laminate and the mounting surface is 45 ° or more 135. It is arranged so that it is below °. The light receiving element is arranged so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction of the semiconductor laminate is 10 ° or less.

According to the optical module, the intensity of the light emitted from the laser element can be adjusted with high accuracy.

It is a schematic perspective view which shows the structure of an optical module. It is a schematic perspective view which shows the structure of an optical module. It is a schematic plan view which shows the structure of an optical module. It is the schematic sectional drawing which shows an example of the structure of a laser element. FIG. 5 is a schematic cross-sectional view corresponding to a state in which a cross section along the line segment VV of FIG. 4 is viewed in the direction of an arrow. FIG. 5 is a schematic cross-sectional view corresponding to a state in which a cross section along the line segment VI-VI of FIG. 2 is viewed in the direction of an arrow. It is a partial plan view which shows the state which the 4th photodiode and the 2nd green laser diode are seen in the Y-axis direction.

[Explanation of Embodiments of the Invention]
First, embodiments of the present invention will be listed and described. The optical module of the present application includes a light forming portion that forms light, and a protective member that has an exit window that transmits light from the light forming portion and is arranged so as to surround the light forming portion. The light forming portion is mounted on the base member and the mounting surface of the base member, and has an end face light emitting type laser element including a semiconductor laminate, and a spot size of light emitted from the base member mounted on the base member. It includes a lens to be converted, and a light receiving element mounted on a base member, arranged between the laser element and the lens in the light emitting direction of the laser element, and directly receiving light from the laser element. In the laser element, the angle formed by the traveling direction of light from the laser element and the mounting surface is 10 ° or less, and the angle formed by the surface perpendicular to the stacking direction of the semiconductor laminate and the mounting surface is 45 ° or more 135. It is arranged so that it is below °. The light receiving element is arranged so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction of the semiconductor laminate is 10 ° or less.

The optical module of the present application has a structure in which a light forming portion including an end face emitting laser element, a lens and a light receiving element arranged on a single base member is surrounded by a single protective member, that is, in a single package. It has a structure in which a laser element, a lens, and a light receiving element are mounted on the surface. Then, in the optical module of the present application, the light emitted from the laser element in this single package is directly received by the light receiving element arranged between the laser element and the lens. Therefore, the intensity of light can be grasped more accurately than in the case where a part of the light emitted from the laser element is taken out by an optical component such as a filter or a mirror and sent to the light receiving element.

Further, in the optical module of the present application, the laser element has a surface formed by the angle between the traveling direction of light from the laser element and the mounting surface of 10 ° or less, and the surface perpendicular to the stacking direction of the semiconductor laminate and the mounting surface. It is arranged so that the angle formed by the surface is 45 ° or more and 135 ° or less. Then, the light receiving element that receives the light from the laser element is arranged so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction of the semiconductor laminate is 10 ° or less. The emission light from the end face emitting type laser element including the semiconductor laminate has a major axis in the stacking direction of the semiconductor laminate and a minor axis in the direction perpendicular to the stacking direction on the plane perpendicular to the optical axis of the emitted light. It has an elliptical shape. Therefore, the angle formed by the laser element between the traveling direction of the light from the laser element and the mounting surface is 10 ° or less, and the angle formed by the surface perpendicular to the stacking direction and the mounting surface is 45 ° or more 135. By tilting the light receiving element in accordance with the laser element so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction is 10 ° or less when the light receiving surface is tilted so as to be ° or less. , The light on the major axis side of the laser light can be received on the light receiving surface. As a result, a sufficient amount of light can be incident on the light receiving surface without significantly cutting the light from the laser element toward the lens, and the intensity of the light can be accurately grasped.

As described above, according to the optical module of the present application, it is possible to accurately grasp the intensity of the light emitted from the laser element and adjust it with high accuracy.

In the above optical module, the angle formed by the surface perpendicular to the stacking direction of the semiconductor laminate and the mounting surface may be 85 ° or more and 95 ° or less. According to the optical module of the present application, even when the laser element is tilted so that the stacking direction of the semiconductor laminate is close to parallel to the mounting surface, the light receiving surface of the light receiving element is tilted accordingly. The intensity of the light emitted from the laser element can be adjusted with high accuracy.

In the optical module, the light forming unit is mounted on a plurality of laser elements including the laser element mounted on the base member, and is mounted on the base member and arranged corresponding to each of the plurality of laser elements. A plurality of lenses including a lens, a plurality of light receiving elements including the light receiving element mounted on the base member and arranged corresponding to the plurality of laser elements, and the plurality of laser elements mounted on the base member. It may include a filter that combines light from.

In this way, by arranging a plurality of laser elements in a single package and enabling the light from these to be combined in the package, the light from a plurality of packages can be combined, as compared with the case where the light from a plurality of packages is combined. It is possible to achieve compactness of the device in which the optical module is used. As the filter, for example, a wavelength selective filter, a polarization synthesis filter, or the like can be adopted.

In the optical module, the plurality of laser elements may include a first laser element and a second laser element having a difference in oscillation wavelength of 10 nm or less. Even if the angle between the plane perpendicular to the stacking direction of the semiconductor laminate included in the first laser element and the plane perpendicular to the stacking direction of the semiconductor laminate included in the second laser element is 85 ° or more and 95 ° or less. Good. The light from the first laser element and the light from the second laser element may be combined by the above-mentioned filter which is a polarization synthesis filter. In this way, by arranging the laser elements having similar oscillation wavelengths so that the planes perpendicular to the stacking direction of the semiconductor laminate are close to each other, and by adopting a polarization synthesis filter as a filter, these The light from the laser element can be easily combined.

In the optical module, the plurality of laser elements may include a laser element that emits red light, the laser element that emits green light, and the laser element that emits blue light. By doing so, these lights can be combined to form light of a desired color.

[Details of Embodiments of the present invention]
Next, an embodiment of the optical module according to the present invention will be described with reference to FIGS. 1 to 7. FIG. 2 is a diagram corresponding to a state in which the cap 40 of FIG. 1 is removed. In the drawings below, the same or corresponding parts are given the same reference number and the explanation is not repeated.

With reference to FIGS. 1 and 2, the optical module 1 in the present embodiment is arranged on a stem 10 having a flat plate shape and one main surface 10A of the stem 10, and is a light forming unit that forms light. 20 and a cap 40 arranged in contact with one main surface 10A of the stem 10 so as to cover the light forming portion 20 and penetrating from the other main surface 10B side of the stem 10 to one main surface 10A side. , A plurality of lead pins 45 projecting on both sides of one main surface 10A side and the other main surface 10B side are provided. The stem 10 and the cap 40 are made airtight by, for example, being welded. That is, the light forming portion 20 is hermetically sealed by the stem 10 and the cap 40. The space surrounded by the stem 10 and the cap 40 is filled with a gas having reduced (removed) moisture such as dry air. The cap 40 is formed with an exit window 41 that transmits light from the light forming portion 20. The exit window 41 may have a flat plate shape whose main surfaces are parallel to each other, or may have a lens shape that collects or diffuses the light from the light forming unit 20. The stem 10 and the cap 40 form a protective member.

With reference to FIGS. 2 and 3, the light forming unit 20 includes a base plate 60 which is a base member having a plate-like shape. The base plate 60 has a rectangular planar shape. Five laser elements are arranged along a region corresponding to one long side of one main surface of the base plate 60.

Specifically, the first chip mounting area 61 is arranged in the area corresponding to one end of the one long side. The first chip mounting region 61 is a rectangular parallelepiped region in which the thickness of the base plate 60 is larger than that of the surrounding region. As a result, the height of the first chip mounting area 61 is higher than that of the surrounding area. A flat plate-shaped first submount 71 is arranged on the first chip mounting area 61. A first red laser diode 51 as a first laser element is arranged on the first submount 71.

In the region corresponding to one long side of one main surface of the base plate 60, the second chip mounting region 62, which is a rectangular parallelepiped block, is arranged on the mounting surface adjacent to the first chip mounting region 61. .. A flat plate-shaped second submount 72 is arranged on the second chip mounting area 62. The plane including the surface on which the first submount 71 is arranged in the first chip mounting area 61 and the plane including the surface on which the second submount 72 is arranged in the second chip mounting area 62 intersect. More specifically, the plane including the surface on which the first submount 71 is arranged in the first chip mounting area 61 and the plane including the surface on which the second submount 72 is arranged in the second chip mounting area 62 are , Orthogonal. A second red laser diode 52 as a second laser element is arranged on the second submount 72. The difference in oscillation wavelength between the first red laser diode 51 and the second red laser diode 52 is 10 nm or less.

In the region corresponding to one long side of one main surface of the base plate 60, the third chip mounting region 63 is arranged on the side opposite to the first chip mounting region 61 when viewed from the second chip mounting region 62. To. The third chip mounting region 63 is a rectangular parallelepiped region in which the thickness of the base plate 60 is larger than that of the surrounding region. As a result, the height of the third chip mounting area 63 is higher than that of the surrounding area. A flat plate-shaped third submount 73 is arranged on the third chip mounting area 63. The plane including the surface on which the third submount 73 is arranged in the third chip mounting area 63 and the plane including the surface on which the second submount 72 is arranged in the second chip mounting area 62 intersect. More specifically, the plane including the surface on which the third submount 73 is arranged in the third chip mounting area 63 and the plane including the surface on which the second submount 72 is arranged in the second chip mounting area 62 are , Orthogonal. A first green laser diode 53 as a third laser element is arranged on the third submount 73.

In the region corresponding to one long side of one main surface of the base plate 60, a rectangular parallelepiped is placed on the mounting surface 60A adjacent to the side opposite to the second chip mounting region 62 when viewed from the third chip mounting region 63. A fourth chip mounting area 64, which is a block shaped like a block, is arranged. A flat plate-shaped fourth submount 74 is arranged on the fourth chip mounting area 64. The plane including the surface on which the third submount 73 is arranged in the third chip mounting area 63 and the plane including the surface on which the fourth submount 74 is arranged in the fourth chip mounting area 64 intersect. More specifically, the plane including the surface on which the third submount 73 is arranged in the third chip mounting area 63 and the plane including the surface on which the fourth submount 74 is arranged in the fourth chip mounting area 64 are , Orthogonal. A second green laser diode 54 as a fourth laser element is arranged on the fourth submount 74. The difference in oscillation wavelength between the first green laser diode 53 and the second green laser diode 54 is 10 nm or less.

In the region corresponding to one long side of one main surface of the base plate 60, the fifth chip mounting region 65 is arranged on the side opposite to the third chip mounting region 63 when viewed from the fourth chip mounting region 64. To. The fifth chip mounting area 65 is arranged in an area corresponding to the other end of the one long side. The fifth chip mounting region 65 is a rectangular parallelepiped region in which the thickness of the base plate 60 is larger than that of the surrounding region. As a result, the height of the fifth chip mounting area 65 is higher than that of the surrounding area. A flat plate-shaped fifth submount 75 is arranged on the fifth chip mounting area 65. The plane including the surface on which the fifth submount 75 is arranged in the fifth chip mounting area 65 and the plane including the surface on which the fourth submount 74 is arranged in the fourth chip mounting area 64 intersect. More specifically, the plane including the surface on which the fifth submount 75 is arranged in the fifth chip mounting area 65 and the plane including the surface on which the fourth submount 74 is arranged in the fourth chip mounting area 64 are , Orthogonal. A blue laser diode 55 as the fifth laser element is arranged on the fifth submount 75.

A first photodiode 91 as a first light receiving element is arranged in a region adjacent to the emission direction of the first red laser diode 51 when viewed from the first chip mounting region 61 of the base plate 60. The first photodiode 91 has a light receiving surface 91A.

A second photodiode support 66, which is a rectangular parallelepiped-shaped block, is arranged in a region adjacent to the emission direction of the second red laser diode 52 when viewed from the second chip mounting region 62 of the base plate 60. A second photodiode 92 as a second light receiving element is arranged on the second photodiode support portion 66. The second photodiode 92 has a light receiving surface 92A. The plane including the light receiving surface 91A and the plane including the light receiving surface 92A intersect. More specifically, the plane including the light receiving surface 91A and the plane including the light receiving surface 92A are orthogonal to each other.

A third photodiode 93 as a third light receiving element is arranged in a region adjacent to the emission direction of the first green laser diode 53 when viewed from the third chip mounting region 63 of the base plate 60. The third photodiode 93 has a light receiving surface 93A. The plane including the light receiving surface 92A and the plane including the light receiving surface 93A intersect. More specifically, the plane including the light receiving surface 92A and the plane including the light receiving surface 93A are orthogonal to each other.

A fourth photodiode support portion 67, which is a rectangular parallelepiped-shaped block, is arranged in a region adjacent to the emission direction of the second green laser diode 54 when viewed from the fourth chip mounting region 64 of the base plate 60. A fourth photodiode 94 as a fourth light receiving element is arranged on the fourth photodiode support portion 67. The fourth photodiode 94 has a light receiving surface 94A. The plane including the light receiving surface 93A and the plane including the light receiving surface 94A intersect. More specifically, the plane including the light receiving surface 93A and the plane including the light receiving surface 94A are orthogonal to each other.

A fifth photodiode 95 as a fifth light receiving element is arranged in a region adjacent to the emission direction of the blue laser diode 55 when viewed from the fifth chip mounting region 65 of the base plate 60. The fifth photodiode 95 has a light receiving surface 95A. The plane including the light receiving surface 94A and the plane including the light receiving surface 95A intersect. More specifically, the plane including the light receiving surface 94A and the plane including the light receiving surface 95A are orthogonal to each other.

The first photodiode 91, the second photodiode 92, the third photodiode 93, the fourth photodiode 94, and the fifth photodiode 95 are the first red laser diode 51, the second red laser diode 52, and the first green laser, respectively. It is installed at a position where light from the diode 53, the second green laser diode 54, and the blue laser diode 55 is directly received. In the present embodiment, the light receiving element is arranged corresponding to each of all the laser elements. The first photodiode 91 and the second photodiode 92 are photodiodes capable of receiving red light. The third photodiode 93 and the fourth photodiode 94 are photodiodes capable of receiving green light. The fifth photodiode 95 is a photodiode capable of receiving blue light.

The first photodiode 91 is arranged between the first red laser diode 51 and the first lens 81 in the emission direction of the first red laser diode 51. The second photodiode 92 is arranged between the second red laser diode 52 and the second lens 82 in the emission direction of the second red laser diode 52. The third photodiode 93 is arranged between the first green laser diode 53 and the third lens 83 in the emission direction of the first green laser diode 53. The fourth photodiode 94 is arranged between the second green laser diode 54 and the fourth lens 84 in the emission direction of the second green laser diode 54. The fifth photodiode 95 is arranged between the blue laser diode 55 and the fifth lens 85 in the emission direction of the blue laser diode 55.

A flat plate-shaped first lens support portion 81B is arranged on the base plate 60 on the side opposite to the first red laser diode 51 when viewed from the first photodiode 91. Then, the first lens 81 is arranged on the first lens support portion 81B. A flat plate-shaped second lens support portion 82B is arranged on the base plate 60 on the side opposite to the second red laser diode 52 when viewed from the second photodiode 92. Then, the second lens 82 is arranged on the second lens support portion 82B. A flat plate-shaped third lens support portion 83B is arranged on the base plate 60 on the side opposite to the first green laser diode 53 when viewed from the third photodiode 93. Then, the third lens 83 is arranged on the third lens support portion 83B. A flat plate-shaped fourth lens support portion 84B is arranged on the base plate 60 on the side opposite to the second green laser diode 54 when viewed from the fourth photodiode 94. Then, the fourth lens 84 is arranged on the fourth lens support portion 84B. A flat plate-shaped fifth lens support portion 85B is arranged on the base plate 60 on the side opposite to the blue laser diode 55 when viewed from the fifth photodiode 95. Then, the fifth lens 85 is arranged on the fifth lens support portion 85B.

The first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85 have a lens portion 81A, a lens portion 82A, and a lens portion 83A, which are portions whose surfaces are lens surfaces, respectively. It has a lens unit 84A and a lens unit 85A. The first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85 are other than the lens portions 81A, 82A, 83A, 84A, 85A and the lens portions 81A, 82A, 83A, 84A, 85A. The area of is integrally molded. The first lens 81, the second lens 82, the third lens 83B, the fourth lens support 84B, and the fifth lens support 85B make up the first lens 81, the second lens 82, and the third lens 83. The central axes of the lens portions 81A, 82A, 83A, 84A, 85A of the fourth lens 84 and the fifth lens 85, that is, the optical axes of the lens portions 81A, 82A, 83A, 84A, 85A are the first red laser diodes 51, respectively. , The second red laser diode 52, the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55 are adjusted to match the optical axes. The first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85 are the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, and the second lens 85, respectively. The spot size of the light emitted from the green laser diode 54 and the blue laser diode 55 is converted. With the first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85, the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, and the second green The spot size is converted so that the spot sizes of the light emitted from the laser diode 54 and the blue laser diode 55 match.

A flat plate-shaped first filter support portion 86B is arranged on the base plate 60 on the side opposite to the first red laser diode 51 when viewed from the first lens 81. Then, the first filter 86 is arranged on the first filter support portion 86B. The first filter 86 is a wavelength selective filter. The first filter 86 reflects red light.

A flat plate-shaped second filter support portion 87B is arranged on the base plate 60 on the side opposite to the second red laser diode 52 when viewed from the second lens 82. Then, the second filter 87 is arranged on the second filter support portion 87B. The second filter 87 is a red polarization synthesis filter.

A flat plate-shaped third filter support portion 88B is arranged on the base plate 60 on the side opposite to the first green laser diode 53 when viewed from the third lens 83. Then, the third filter 88 is arranged on the third filter support portion 88B. The third filter 88 is a wavelength selective filter. The third filter 88 transmits red light and reflects green light.

A flat plate-shaped fourth filter support portion 89B is arranged on the base plate 60 on the side opposite to the second green laser diode 54 when viewed from the fourth lens 84. Then, the fourth filter 89 is arranged on the fourth filter support portion 89B. The fourth filter 89 is a green polarization synthesis filter.

A flat plate-shaped fifth filter support portion 90B is arranged on the base plate 60 on the side opposite to the blue laser diode 55 when viewed from the fifth lens 85. Then, the fifth filter 90 is arranged on the fifth filter support portion 90B. The fifth filter 90 is a wavelength selective filter. The fifth filter 90 transmits red light and green light, and reflects blue light.

The first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 each have a flat plate shape having parallel main surfaces.

With reference to FIG. 3, the first red laser diode 51, the first photodiode 91, the first lens 81, and the first filter 86 are directed along the light emission direction of the first red laser diode 51 (Y-axis direction). They are arranged side by side in. The second red laser diode 52, the second photodiode 92, the second lens 82, and the second filter 87 are arranged side by side in the direction (Y-axis direction) along the light emission direction of the second red laser diode 52. .. The first green laser diode 53, the third photodiode 93, the third lens 83, and the third filter 88 are arranged side by side in the direction (Y-axis direction) along the light emission direction of the first green laser diode 53. .. The second green laser diode 54, the fourth photodiode 94, the fourth lens 84, and the fourth filter 89 are arranged side by side in the direction (Y-axis direction) along the light emission direction of the second green laser diode 54. .. The blue laser diode 55, the fifth photodiode 95, the fifth lens 85, and the fifth filter 90 are arranged side by side in the direction (Y-axis direction) along the light emission direction of the blue laser diode 55.

The first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 are a first red laser diode 51, a second red laser diode 52, a first green laser diode 53, and a second green. The laser diode 54 and the blue laser diode 55 are arranged side by side in a direction intersecting the emission direction of light, more specifically, in an orthogonal direction (X-axis direction). The main surfaces of the first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 are the first red laser diode 51, the second red laser diode 52, and the first green laser diode 53, respectively. , The second green laser diode 54 and the blue laser diode 55 are inclined with respect to the emission direction of light. More specifically, the main surfaces of the first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 are the first red laser diode 51 and the second red laser diode 52, respectively. It is inclined by 45 ° with respect to the emission direction (Y-axis direction) of light from the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55.

With reference to FIG. 2, the optical module 1 of the present embodiment further includes an electronic cooling module 30 between the stem 10 and the optical forming unit 20. The electronic cooling module 30 includes a heat absorbing plate (not shown), a heat radiating plate 32, and a semiconductor column 33 arranged side by side between the heat absorbing plate and the heat radiating plate 32 with an electrode interposed therebetween. The heat absorbing plate and the heat radiating plate 32 are made of, for example, alumina. The endothermic plate is placed in contact with the other main surface 60B of the base plate 60. The heat radiating plate 32 is arranged in contact with one main surface 10A of the stem 10. In the present embodiment, the electronic cooling module 30 is a Peltier module (Peltier element). Then, by passing an electric current through the electronic cooling module 30, the heat of the base plate 60 in contact with the heat absorbing plate is transferred to the stem 10, and the base plate 60 is cooled. As a result, the temperature rise of the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55 is suppressed. By maintaining the temperature of the laser diode in an appropriate range in this way, it is possible to accurately form light of a desired color.

Next, the laser element of this embodiment will be described by taking the second green laser diode 54 as an example.

4 and 5 are schematic cross-sectional views showing an example of the structure of the second green laser diode 54. FIG. 4 is a schematic cross-sectional view corresponding to a state in which a cross section along the line segment IV-IV of FIG. 5 is viewed in the direction of an arrow. Further, FIG. 5 is a schematic cross-sectional view corresponding to a state in which a cross section along the line segment VV of FIG. 4 is viewed in the direction of an arrow. That is, FIGS. 4 and 5 are cross-sectional views of planes orthogonal to each other.

With reference to FIGS. 4 and 5, the second green laser diode 54 in the present embodiment includes the substrate 110, the semiconductor layer 120, the insulating film 131, the p-side electrode 141, the n-side electrode 142, and the front side. A dielectric multilayer film 160 and a rear dielectric multilayer film 170 are provided. The substrate 110 and the semiconductor layer 120 form a semiconductor laminate. The substrate 110 is made of a group III-V nitride semiconductor. The substrate 110 has a first main surface 110A and a second main surface 110B which is a main surface opposite to the first main surface 110A.

The semiconductor layer 120 is arranged so as to be in contact with the first main surface 110A of the substrate 110. The semiconductor layer 120 is a layer formed by epitaxial growth on the first main surface 110A of the substrate 110. The semiconductor layer 120 is made of a group III-V nitride semiconductor. The semiconductor layer 120 includes a buffer layer 121, an n-side clad layer 122, an n-side guide layer 123, an active layer 124, a first p-side guide layer 125, a block layer 126, and a second p-side guide layer 127. It contains a p-side clad layer 128 and a contact layer 129.

The buffer layer 121 is arranged so as to come into contact with the first main surface 110A of the substrate 110. The buffer layer 121 is made of a group III-V nitride semiconductor. The buffer layer 121 is a layer formed by epitaxial growth on the first main surface 110A of the substrate 110.

The n-side clad layer 122 is arranged so as to come into contact with the main surface 121A of the buffer layer 121 opposite to the substrate 110. The n-side clad layer 122 is made of a group III-V nitride semiconductor. The n-side clad layer 122 is a layer formed by epitaxial growth on the main surface 121A of the buffer layer 121.

The n-side guide layer 123 is arranged so as to come into contact with the main surface 122A of the n-side clad layer 122 opposite to the buffer layer 121. The n-side guide layer 123 is made of a group III-V nitride semiconductor. The n-side guide layer 123 is a layer formed by epitaxial growth on the main surface 122A of the n-side clad layer 122.

The active layer 124 is arranged so as to come into contact with the main surface 123A of the n-side guide layer 123 opposite to the n-side clad layer 122. The active layer 124 is made of a group III-V nitride semiconductor. The active layer 124 is a layer formed by epitaxial growth on the main surface 123A of the n-side guide layer 123. The active layer 124 constitutes an SQW (Single Quantum Well) in which electrons and holes recombine to generate light. The active layer 124 produces green light.

The first p-side guide layer 125 is arranged so as to come into contact with the main surface 124A on the side opposite to the n-side guide layer 123 of the active layer 124. The first p-side guide layer 125 is made of a group III-V nitride semiconductor. The first p-side guide layer 125 is a layer formed by epitaxial growth on the main surface 124A of the active layer 124.

The block layer 126 is arranged so as to come into contact with the main surface 125A on the side opposite to the active layer 124 of the first p-side guide layer 125. The block layer 126 is made of a group III-V nitride semiconductor. The block layer 126 is a layer formed by epitaxial growth on the main surface 125A of the first p-side guide layer 125.

The second p-side guide layer 127 is arranged so as to come into contact with the main surface 126A on the side opposite to the first p-side guide layer 125 of the block layer 126. The second p-side guide layer 127 is made of a group III-V nitride semiconductor. The second p-side guide layer 127 is a layer formed by epitaxial growth on the main surface 126A of the block layer 126.

The p-side clad layer 128 is arranged so as to come into contact with the main surface 127A on the side opposite to the block layer 126 of the second p-side guide layer 127. The p-side clad layer 128 is made of a group III-V nitride semiconductor. The p-side clad layer 128 is a layer formed by epitaxial growth on the main surface 127A of the second p-side guide layer 127.

The contact layer 129 is arranged so as to come into contact with the main surface 128A of the p-side clad layer 128 opposite to the second p-side guide layer 127. The contact layer 129 is made of a group III-V nitride semiconductor. The contact layer 129 is a layer formed by epitaxial growth on the main surface 128A of the p-side clad layer 128.

Here, FIG. 4 corresponds to a cross section perpendicular to the direction in which light repeatedly reflects on the end face (hereinafter, referred to as “end face reflection direction”) in the active layer 124. On the other hand, FIG. 5 corresponds to a cross section along the end face reflection direction. With reference to FIG. 4, in the cross section perpendicular to the end face reflection direction, the groove portion 151 is formed in the semiconductor layer 120. The groove portion 151 is formed so as to extend along the end face reflection direction. The groove portion 151 opens on the main surface 129A of the contact layer 129, penetrates the contact layer 129, the p-side clad layer 128, and the second p-side guide layer 127, and has a bottom wall in the block layer 126. That is, the contact layer 129, the p-side clad layer 128, and the second p-side guide layer 127 are exposed on the side wall of the groove portion 151. A plurality of groove portions 151 are formed at equal intervals in a direction perpendicular to the end face reflection direction. As a result, the region sandwiched between the adjacent groove portions 151 constitutes the ridge portion 152. The ridge portion 152 includes a contact layer 129, a p-side clad layer 128, and a second p-side guide layer 127.

The insulating film 131 is formed so as to come into contact with the semiconductor layer 120. The insulating film 131 is made of an insulator such as silicon dioxide (SiO ₂ ). The insulating film 131 covers the bottom wall and the side wall of the groove portion 151 and extends over the main surface 129A of the contact layer 129. The insulating film 131 is formed with an opening 131A that penetrates the insulating film 131. In the opening 131A, the main surface 129A of the contact layer 129 is exposed. Then, the p-side electrode 141 is formed so as to fill the opening 131A and extend onto the insulating film 131. The p-side electrode 141 is made of a conductor such as Ni / Au (nickel / gold) or a metal capable of forming ohmic contact with the contact layer 129. The p-side electrode 141 is in contact with the contact layer 129 exposed in the opening 131A. The p-side electrode 141 and the contact layer 129 form an ohmic contact. On the other hand, the n-side electrode 142 is arranged so as to come into contact with the second main surface 110B of the substrate 110. The n-side electrode 142 is made of a conductor such as a metal that can make ohmic contact with the substrate 110, such as Ti / Al / Ti / Au (titanium / aluminum / titanium / gold). The n-side electrode 142 and the substrate 110 form an ohmic contact.

With reference to FIG. 5, the front dielectric multilayer film 160 is arranged so as to come into contact with the front end face 120A, which is one end face of the semiconductor layer 120 in the end face reflection direction, and comes into contact with the rear end face 120B, which is the other end face. As described above, the rear dielectric multilayer film 170 is arranged. The front-side dielectric multilayer film 160 and the rear-side dielectric multilayer film 170 are formed so as to cover the entire front end surface 120A and the rear end surface 120B of the semiconductor layer 120, respectively.

Next, the operation of the second green laser diode 54 in the present embodiment will be described. With reference to FIGS. 4 and 5, when a voltage is applied between the p-side electrode 141 and the n-side electrode 142, a current flows between the p-side electrode 141 and the n-side electrode 142. At this time, holes are injected into the active layer 124 constituting the SQW from the p-side electrode 141 side, and electrons are injected from the n-side electrode 142 side. Then, in the active layer 124, holes and electrons are recombined to generate light. The generated light is confined in the active layer 124 sandwiched between the n-side guide layer 123 and the first p-side guide layer 125 in the thickness direction of the active layer 124. On the other hand, the reflectance of light on the front end surface 120A is set smaller than the reflectance on the rear end surface 120B. For example, the reflectance of the front end surface 120A of the light is set to about 40%, and the reflectance of the rear end surface 120B is set to about 95%. The light confined in the active layer 124 in the thickness direction repeats reflection between the front end surface 120A and the rear end surface 120B. As a result, the light having the same phase is amplified, and laser oscillation is achieved. Then, the laser beam is emitted from the front end surface 120A. The second green laser diode 54 is an end face emitting type laser element.

Here, referring to FIG. 2, the second green laser diode 54 is held and arranged in the fourth chip mounting region 64 on the mounting surface 60A of the base plate 60 which is a plane parallel to the XY plane. .. With reference to FIGS. 2, 4 and 5, the second green laser diode 54 is arranged so that the stacking direction of the semiconductor laminate is along the X-axis direction and the end face reflection direction is along the Y-axis direction. That is, the second green laser diode 54 has an angle formed by the traveling direction of the light from the second green laser diode 54 and the mounting surface 60A of 10 ° or less (more specifically, the light from the second green laser diode 54). The angle between the plane that is parallel to the traveling direction and the mounting surface 60A and that is perpendicular to the stacking direction of the semiconductor laminate and the mounting surface 60A (XY plane) is 45 ° or more and 135 ° or less (further 85 °). (More than 95 ° or less), specifically, it is arranged so as to be 90 °.

Further, the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, and the blue laser diode 55 are end face emitting laser elements having the same structure as the second green laser diode 54. Then, the second red laser diode 52 is arranged so that the stacking direction of the semiconductor laminate is along the X-axis direction and the end face reflection direction is along the Y-axis direction, as in the case of the second green laser diode 54. That is, the second red laser diode 52 has an angle formed by the traveling direction of the light from the second red laser diode 52 and the mounting surface (XY plane) of 10 ° or less (more specifically, the second red laser diode 52). The angle between the plane perpendicular to the stacking direction of the semiconductor laminate and the mounting surface (XY plane) is 45 ° or more and 135 ° or less (furthermore). Is 85 ° or more and 95 ° or less), specifically, 90 °. On the other hand, the first red laser diode 51, the first green laser diode 53, and the blue laser diode 55 are arranged so that the stacking direction of the semiconductor laminate is along the Z-axis direction and the end face reflection direction is along the Y-axis direction. That is, in the first red laser diode 51, the first green laser diode 53, and the blue laser diode 55, the angle formed by the plane perpendicular to the stacking direction of the semiconductor laminate and the mounting surface is less than 45 °, specifically 0 °. It is arranged so as to be.

The angle between the plane perpendicular to the stacking direction of the semiconductor laminate included in the first red laser diode 51 and the plane perpendicular to the stacking direction of the semiconductor laminate included in the second red laser diode 52 is 85 ° or more and 95 ° or less. Specifically, it is 90 °. Further, the angle formed by the plane perpendicular to the stacking direction of the semiconductor laminate included in the first green laser diode 53 and the plane perpendicular to the stacking direction of the semiconductor laminate included in the second green laser diode 54 is 85 ° or more and 95 ° C. ° or less, specifically 90 °.

Next, the arrangement of the light receiving element with respect to the laser element will be described by taking the arrangement of the fourth photodiode 94 with respect to the second green laser diode 54 as an example. FIG. 6 is a cross-sectional view of the vicinity of the second green laser diode 54, the fourth photodiode 94, and the fourth lens 84 in the XY plane including the optical axis of the second green laser diode 54. Further, FIG. 7 is a plan view of the second green laser diode 54 side as viewed from the fourth lens 84 side along the optical axis of the second green laser diode 54.

With reference to FIGS. 6 and 7, the fourth photodiode 94 forms a plane S ₂ including the light receiving surface 94A and a plane S ₁ perpendicular to the stacking direction of the semiconductor laminate included in the second green laser diode 54. It is arranged so that the angle is 10 ° or less. Here, the plane S ₂ comprising a light-receiving surface 94A, the inclination angle in a direction intersecting the optical axis of the second green laser diode 54 with respect to the plane S ₁ (plane S ₂ and the plane S ₁ viewed from the Z direction shown in FIG. 6 plane S and the angle) of the plane S ₂ comprising a light-receiving surface 94A, as seen from the Y direction shown in the inclination angle (Figure 7 in parallel to the optical axis of the second green laser diode 54 with respect to the plane S ₁ and both the ₂ and the angle between the plane S ₁₎ is such that the 10 ° or less, a fourth photodiode 94 is disposed. More specifically, the plane S ₂ and the plane S ₁ are both planes parallel to the YY plane, and the angle formed by both planes is 0 °.

Further, the second photodiode 92 is a semiconductor laminate included in the plane including the light receiving surface 92A and the second red laser diode 52, similarly to the arrangement relationship between the fourth photodiode 94 and the second green laser diode 54. It is arranged so that the angle formed by the plane perpendicular to the stacking direction is 10 ° or less. Further, the first photodiode 91, the third photodiode 93, and the fifth photodiode 95 have a plane including the light receiving surfaces 91A, 93A, and 95A, a first red laser diode 51, a first green laser diode 53, and a blue laser diode, respectively. The semiconductor laminate included in 55 is arranged so that the angle formed by the plane perpendicular to the lamination direction is 10 ° or less.

Next, the operation of the optical module 1 in this embodiment will be described. Referring to FIG. 3, the red light emitted from the first red laser diode 51 travels along the optical path L _1. At this time, a part of the red light is directly incident on the light receiving surface 91A of the first photodiode 91. As a result, the intensity of the red light emitted from the first red laser diode 51 is grasped, and the first red laser diode 51 is set based on the difference between the grasped light intensity and the target light intensity to be emitted. The power supplied is adjusted. The red light that has passed over the first photodiode 91 enters the lens portion 81A of the first lens 81, and the spot size of the light is converted. Specifically, for example, the red light emitted from the first red laser diode 51 is converted into collimated light. Red light spot size is converted in the first lens 81 along the optical path L ₁ proceeds, is incident on the first filter 86. The first filter 86 is a wavelength selective filter that reflects red light. Therefore, the light emitted from the first red laser diode 51 travels along the optical path L ₂ is reflected at the first filter 86. Then, the light emitted from the first red laser diode 51 passes through the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90, and passes through the optical path L ₃ , the optical path L ₄ , the optical path L _5, and the optical path L _5. further progress along the optical path L _6, through the exit window 41 of the cap 40 is emitted to the outside of the optical module 1.

Red light emitted from the second red laser diode 52 travels along the optical path L _7. At this time, a part of the red light is directly incident on the light receiving surface 92A of the second photodiode 92. As a result, the intensity of the red light emitted from the second red laser diode 52 is grasped, and the second red laser diode 52 is set based on the difference between the grasped light intensity and the target light intensity to be emitted. The power supplied is adjusted. The red light that has passed over the second photodiode 92 enters the lens portion 82A of the second lens 82, and the spot size of the light is converted. Specifically, for example, the red light emitted from the second red laser diode 52 is converted into collimated light. Red light spot size is converted in the second lens 82 along the optical path L ₇ proceeds, is incident on the second filter 87. The second filter 87 is a polarization synthesis filter that transmits red light whose vibration direction is the horizontal direction (X-axis direction) and reflects light whose vibration direction is the vertical direction (Z-axis direction). .. On the other hand, the vibration direction of the light from the first red laser diode 51 and the second red laser diode 52 is a direction perpendicular to the stacking direction of the semiconductor laminate. That is, the vibration direction of the light from the first red laser diode 51 is the X-axis direction, and the vibration direction of the light from the second red laser diode 52 is the Z-axis direction. Therefore, the light emitted from the second red laser diode 52 merges is reflected at the second filter 87 in the optical path L _3. As a result, the red light from the second red laser diode 52 is red light and combined from the first red laser diode 51 travels along the optical path L _3. The light emitted from the second red laser diode 52, the third filter 88, fourth filter 89 and the fifth filter 90 optical path L ₄ passes through the _further progress along the optical path L ₅ and the optical path L ₆ , The light is emitted to the outside of the optical module 1 through the exit window 41 of the cap 40.

Green light emitted from the first green laser diode 53 travels along the optical path L _8. At this time, a part of the green light is directly incident on the light receiving surface 93A of the third photodiode 93. As a result, the intensity of the green light emitted from the first green laser diode 53 is grasped, and the first green laser diode 53 is set based on the difference between the grasped light intensity and the target light intensity to be emitted. The power supplied is adjusted. The green light that has passed over the third photodiode 93 enters the lens portion 83A of the third lens 83, and the spot size of the light is converted. Specifically, for example, the green light emitted from the first green laser diode 53 is converted into collimated light. Green light spot size is converted in the third lens 83 along the optical path L ₈ proceeds, incident on the third filter 88. The third filter 88 is a wavelength selective filter that transmits red light and reflects green light. Therefore, the light emitted from the first green laser diode 53 merges is reflected in the third filter 88 in the optical path L _4. As a result, green light from the first green laser diode 53 is red light and combined from the red light and the second red laser diode 52 from the first red laser diode 51, along the optical path L ₄ proceed. The light emitted from the first green laser diode 53 further proceeds along the optical path L ₅ and the optical path L ₆ is transmitted through the fourth filter 89 and the fifth filter 90, through the exit window 41 of the cap 40 The light is emitted to the outside of the optical module 1.

Green light emitted from the second green laser diode 54 travels along the optical path L _9. At this time, a part of the green light is directly incident on the light receiving surface 94A of the fourth photodiode 94. As a result, the intensity of the green light emitted from the second green laser diode 54 is grasped, and the second green laser diode 54 is set based on the difference between the grasped light intensity and the target light intensity to be emitted. The power supplied is adjusted. The green light that has passed over the fourth photodiode 94 enters the lens portion 84A of the fourth lens 84, and the spot size of the light is converted. Specifically, for example, the green light emitted from the second green laser diode 54 is converted into collimated light. Green light spot size is converted in the fourth lens 84 along the optical path L ₉ proceeds, is incident on the fourth filter 89. The fourth filter 89 is a polarization synthesis filter that transmits green light whose vibration direction is the horizontal direction (X-axis direction) and reflects light whose vibration direction is the vertical direction (Z-axis direction). .. On the other hand, the vibration direction of the light from the first green laser diode 53 and the second green laser diode 54 is a direction perpendicular to the stacking direction of the semiconductor laminate. That is, the vibration direction of the light from the first green laser diode 53 is the X-axis direction, and the vibration direction of the light from the second green laser diode 54 is the Z-axis direction. Therefore, the light emitted from the second green laser diode 54 joins the optical path L ₅ is reflected in the fourth filter 89. As a result, the green light from the second green laser diode 54 is the red light from the first red laser diode 51, the red light from the second red laser diode 52, and the green light from the first green laser diode 53. When are multiplexed, it travels along the optical path L _5. The light emitted from the second green laser diode 54 is transmitted through the fifth filter 90 further proceeds along the optical path L _6, exit through the exit window 41 of the cap 40 to the outside of the optical module 1 To do.

Blue light emitted from the blue laser diode 55 travels along the optical path L _10. At this time, a part of the blue light is directly incident on the light receiving surface 95A of the fifth photodiode 95. As a result, the intensity of the blue light emitted from the blue laser diode 55 is grasped, and the power supplied to the blue laser diode 55 based on the difference between the grasped light intensity and the target light intensity to be emitted. Is adjusted. The blue light that has passed over the fifth photodiode 95 enters the lens portion 85A of the fifth lens 85, and the spot size of the light is converted. Specifically, for example, the blue light emitted from the blue laser diode 55 is converted into collimated light. Blue light spot size is converted in the fifth lens 85 along the optical path L ₁₀ proceeds, enters the fifth filter 90. The fifth filter 90 is a wavelength selective filter that transmits red light and green light and reflects blue light. Therefore, light emitted from the blue laser diode 55 joins the optical path L ₆ is reflected in the fifth filter 90. As a result, the blue light from the blue laser diode 55 is the red light from the first red laser diode 51, the red light from the second red laser diode 52, the green light from the first green laser diode 53, and the green light is combined with the light from the second green laser diode 54, along the optical path L ₆ progresses through the exit window 41 of the cap 40 is emitted to the outside of the optical module 1.

In this way, the light formed by combining the red, green, and blue lights is emitted from the exit window 41 of the cap 40. Here, in the optical module 1 of the present embodiment, the light emitted from the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55. A part of the first photodiode 91, the second photodiode 92, and the second photodiode 91, which are arranged between the first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85, respectively. The light is directly received by the 3 photodiode 93, the 4th photodiode 94, and the 5th photodiode 95. Therefore, it is possible to accurately grasp the intensity of light and adjust the intensity of the light with high accuracy.

Further, in the optical module 1 of the present embodiment, the second red laser diode 52 and the second green laser diode 54 form a plane perpendicular to the stacking direction of the semiconductor laminate and a mounting surface (XY plane). It is arranged so that the angle is 45 ° or more and 135 ° or less, specifically 90 °. Then, the second photodiode 92 and the fourth photodiode 94 that receive the light from the second red laser diode 52 and the second green laser diode 54 are surfaces perpendicular to the light receiving surfaces 92A and 94A and the lamination direction of the semiconductor laminate. It is arranged so that the angle between the diode and the diode is 10 ° or less.

The emitted light from the second red laser diode 52 and the second green laser diode 54, which are end face emitting laser elements including the semiconductor laminate, determines the lamination direction of the semiconductor laminate on the plane perpendicular to the optical axis of the emitted light. It has an elliptical shape with a major axis and a minor axis in the direction perpendicular to the stacking direction. Therefore, when the second red laser diode 52 and the second green laser diode 54 are arranged at an angle so that the angle formed by the surface perpendicular to the stacking direction and the mounting surface is 45 ° or more and 135 ° or less. The second photodiode 92 and the fourth photodiode 94 are arranged with the second red laser diode 52 and the second green laser diode so that the angle formed by the light receiving surfaces 92A and 94A and the surface perpendicular to the stacking direction is 10 ° or less. By arranging the laser light at an angle according to 54, the light on the major axis side of the laser light can be received by the light receiving surfaces 92A and 94A. As a result, a sufficient amount of light is incident on the light receiving surfaces 92A and 94A without significantly cutting the light from the second red laser diode 52 and the second green laser diode 54 toward the second lens 82 and the fourth lens 84. The strength can be grasped accurately.

As described above, the optical module 1 is an optical module capable of accurately grasping the intensity of light emitted from the laser element and adjusting it with high accuracy.

The submount is made of a material having a coefficient of thermal expansion close to that of an element mounted on the submount, and can be made of, for example, AlN, SiC, Si, diamond, or the like. Further, as the material constituting the stem and the cap, for example, iron, copper or the like having high thermal conductivity may be adopted, or AlN, CuW, CuMo or the like may be adopted. Further, in the above embodiment, the case where the light from the five laser elements is combined has been described, but the number of laser elements can be arbitrarily set according to the application of the optical module.

Further, in the above embodiment, the angle formed by the plane perpendicular to the stacking direction of the semiconductor laminates of the first red laser diode 51 and the first green laser diode 53 and the mounting surface (XY plane) of the base plate 60. Is 0 °, and the angle formed by the plane perpendicular to the stacking direction of the semiconductor laminates of the second red laser diode 52 and the second green laser diode 54 and the mounting surface (XY plane) of the base plate 60 is 90 °. Although the example in which the laser light of the same color is combined by the polarization synthesis filter has been described, the arrangement of the laser elements is not limited to this. For example, the angle formed by the plane perpendicular to the stacking direction of the semiconductor laminates of the first red laser diode 51 and the first green laser diode 53 and the mounting plane (XY plane) of the base plate 60 is 45 °. 2 Lasers of the same color have an angle of 135 ° between the plane perpendicular to the stacking direction of the semiconductor laminates of the red laser diode 52 and the second green laser diode 54 and the mounting surface (XY plane) of the base plate 60. The light may be combined by a polarization synthesis filter.

It should be understood that the embodiments disclosed here are exemplary in all respects and are not restrictive in any way. The scope of the present invention is defined by the scope of claims, not the above description, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

The optical module of the present application can be particularly advantageously applied to an optical module that is required to adjust the intensity of light emitted from a laser element with high accuracy.

1 Optical module 10 Stem 10A, 10B Main surface 20 Optical forming part 30 Electronic cooling module 32 Heat dissipation plate 33 Semiconductor column 40 Cap 41 Exit window 45 Lead pin 51 First red laser diode 52 Second red laser diode 53 First green laser diode 54 2nd green laser diode 55 Blue laser diode 60 Base plate 60A Mounting surface 60B Main surface 61 1st chip mounting area 62 2nd chip mounting area 63 3rd chip mounting area 64 4th chip mounting area 65 5th chip mounting area 66 2 Photodiode support 67 4th photodiode support 71 1st submount 72 2nd submount 73 3rd submount 74 4th submount 75 5th submount 81 1st lens 81A, 82A, 83A, 84A, 85A Lens part 81B 1st lens support part 82 2nd lens 82B 2nd lens support part 83 3rd lens 83B 3rd lens support part 84 4th lens 84B 4th lens support part 85 5th lens 85B 5th lens support part 86th 1 Filter 86B 1st filter support 87 2nd filter 87B 2nd filter support 88 3rd filter 88B 3rd filter support 89 4th filter 89B 4th filter support 90 5th filter 90B 5th filter support 91 1 Photodiode 91A, 92A, 93A, 94A, 95A Light receiving surface 92 Second photodiode 93 Third photodiode 94 Fourth photodiode 95 Fifth photodiode 110 substrate,
110A, 110B Main surface 120 Semiconductor layer 120A Front end surface 120B Rear end surface 121 Buffer layer 121A Main surface 122 n-side cladding layer 122A Main surface 123 n-side guide layer 123A Main surface 124 Active layer 124A Main surface 125 p-side guide layer 125A Main surface 126 Block layer 126A Main surface 127 p side guide layer 127A Main surface 128 p side clad layer 128A Main surface 129 Contact layer 129A Main surface 131 Insulation film 131A Opening 141 p side electrode 142 n side electrode 151 Groove 152 Ridge part 160 Front side dielectric Body multilayer film 170 Rear dielectric multilayer film

Claims (2)

The light forming part that forms light and
It has an exit window for transmitting light from the light forming portion, and includes a protective member arranged so as to surround the light forming portion.
The light forming part is
With the base member
Wherein mounted on the mounting surface of the base member, seen including a semiconductor stack, a first laser element and second laser element of the edge-emitting difference oscillation wavelength of 10nm or less,
The spot size of the light mounted on the base member, arranged corresponding to each of the first laser element and the second laser element, and emitted from each of the first laser element and the second laser element is determined. The first and second lenses to be converted,
Mounted on said base member, said between said first laser element and the respective light the first lens and the first laser element in the emission direction of the second laser element, and a second laser device a The first light receiving element and the second light receiving element , which are arranged between the two lenses and directly receive the respective light from the first laser element and the second laser element ,
A polarization synthesis filter mounted on the base member and merging light from the first laser element and the second laser element is included.
The first laser element has an angle formed by the traveling direction of light from the first laser element and the mounting surface of 10 ° or less, and is in the stacking direction of the semiconductor laminate included in the first laser element. Arranged so that the angle between the vertical surface and the mounting surface is less than 45 °.
The second laser element has an angle formed by the traveling direction of light from the second laser element and the mounting surface of 10 ° or less, and is in the stacking direction of the semiconductor laminate included in the second laser element. It is arranged so that the angle formed by the vertical surface and the mounting surface is 45 ° or more and 135 ° or less.
The angle formed by the plane perpendicular to the stacking direction of the semiconductor laminate included in the first laser element and the plane perpendicular to the stacking direction of the semiconductor laminate included in the second laser element is 85 ° or more and 95 ° or less. And
The first light receiving element is arranged so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction of the semiconductor laminate included in the first laser element is 10 ° or less .
The second light receiving element is Ru are arranged so as the angle between a plane perpendicular to the stacking direction of the semiconductor multilayer body included in the light-receiving surface a second laser element is 10 ° or less, the optical module. The optical module according to claim 1, wherein the angle formed by the surface perpendicular to the stacking direction of the semiconductor laminate included in the second laser element and the mounting surface is 85 ° or more and 95 ° or less.

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