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JP6722736B2 - 焼結体および、スパッタリングターゲット - Google Patents

焼結体および、スパッタリングターゲット Download PDF

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Publication number
JP6722736B2
JP6722736B2 JP2018177651A JP2018177651A JP6722736B2 JP 6722736 B2 JP6722736 B2 JP 6722736B2 JP 2018177651 A JP2018177651 A JP 2018177651A JP 2018177651 A JP2018177651 A JP 2018177651A JP 6722736 B2 JP6722736 B2 JP 6722736B2
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JP
Japan
Prior art keywords
sintered body
less
sputtering target
bulk resistance
mpa
Prior art date
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Active
Application number
JP2018177651A
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English (en)
Japanese (ja)
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JP2020045268A (ja
Inventor
正章 秀島
正章 秀島
浩二 角田
浩二 角田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to JP2018177651A priority Critical patent/JP6722736B2/ja
Priority to KR1020190046280A priority patent/KR102218814B1/ko
Priority to CN201910446594.1A priority patent/CN110937891A/zh
Priority to TW108121570A priority patent/TWI696597B/zh
Publication of JP2020045268A publication Critical patent/JP2020045268A/ja
Application granted granted Critical
Publication of JP6722736B2 publication Critical patent/JP6722736B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2018177651A 2018-09-21 2018-09-21 焼結体および、スパッタリングターゲット Active JP6722736B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018177651A JP6722736B2 (ja) 2018-09-21 2018-09-21 焼結体および、スパッタリングターゲット
KR1020190046280A KR102218814B1 (ko) 2018-09-21 2019-04-19 소결체, 스퍼터링 타깃 및 소결체의 제조 방법
CN201910446594.1A CN110937891A (zh) 2018-09-21 2019-05-27 烧结体、溅射靶及烧结体的制造方法
TW108121570A TWI696597B (zh) 2018-09-21 2019-06-20 燒結體、濺鍍靶材及燒結體的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018177651A JP6722736B2 (ja) 2018-09-21 2018-09-21 焼結体および、スパッタリングターゲット

Publications (2)

Publication Number Publication Date
JP2020045268A JP2020045268A (ja) 2020-03-26
JP6722736B2 true JP6722736B2 (ja) 2020-07-15

Family

ID=69900704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018177651A Active JP6722736B2 (ja) 2018-09-21 2018-09-21 焼結体および、スパッタリングターゲット

Country Status (4)

Country Link
JP (1) JP6722736B2 (ko)
KR (1) KR102218814B1 (ko)
CN (1) CN110937891A (ko)
TW (1) TWI696597B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114002125B (zh) * 2021-11-03 2023-10-13 中南大学 一种烧结料层阻力系数的快速测试方法
EP4299787A4 (en) * 2022-03-07 2025-03-19 Tokai Carbon Co., Ltd. POLYCRYSTALLINE SIC MOLDED ARTICLE AND PROCESS FOR PRODUCING THE SAME

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244327B2 (ko) 1973-04-25 1977-11-07
JPS594056B2 (ja) 1976-09-13 1984-01-27 カシオ計算機株式会社 キ−入力制御方式
JPS5928856B2 (ja) 1978-08-26 1984-07-16 株式会社北電子 印刷物の識別方法
CN103233204A (zh) * 2008-06-06 2013-08-07 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
US8795554B2 (en) * 2008-06-27 2014-08-05 Idemitsu Kosan Co., Ltd. Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target
JP5596963B2 (ja) * 2009-11-19 2014-09-24 出光興産株式会社 スパッタリングターゲット及びそれを用いた薄膜トランジスタ
JP5685428B2 (ja) * 2010-12-02 2015-03-18 太平洋セメント株式会社 Ｉｇｚｏ焼結体及びその製造方法
JP2014105124A (ja) * 2012-11-27 2014-06-09 Sumitomo Electric Ind Ltd 導電性酸化物ならびに半導体酸化物膜およびその製造方法
JP5796812B2 (ja) * 2013-11-29 2015-10-21 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法
CN105209405B (zh) * 2014-03-28 2017-07-11 吉坤日矿日石金属株式会社 氧化物烧结体和包含该氧化物烧结体的溅射靶
JP6158129B2 (ja) * 2014-03-28 2017-07-05 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
KR101932369B1 (ko) * 2015-02-27 2018-12-24 제이엑스금속주식회사 산화물 소결체 및 그 산화물 소결체로 이루어지는 스퍼터링 타깃

Also Published As

Publication number Publication date
CN110937891A (zh) 2020-03-31
TW202012340A (zh) 2020-04-01
KR102218814B1 (ko) 2021-02-22
KR20200034561A (ko) 2020-03-31
TWI696597B (zh) 2020-06-21
JP2020045268A (ja) 2020-03-26

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