JP6694815B2 - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
- Publication number
- JP6694815B2 JP6694815B2 JP2016535543A JP2016535543A JP6694815B2 JP 6694815 B2 JP6694815 B2 JP 6694815B2 JP 2016535543 A JP2016535543 A JP 2016535543A JP 2016535543 A JP2016535543 A JP 2016535543A JP 6694815 B2 JP6694815 B2 JP 6694815B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- reflective
- emitting device
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
Claims (7)
- 発光デバイスであって:
並んで配置される複数の発光素子;及び
前記複数の発光素子にわたって延び、前記複数の発光素子の各々の発光面に取り付けられる予め形成された波長変換素子;
を有し、前記予め形成された波長変換素子は、
光抽出面;及び
前記光抽出面に対して垂直にも平行にも方向付けられていない複数の反射側面;
を含み、各々の反射側面は、隣接する発光素子のうちの対応するペアの間に位置し、反射側面が間に位置している前記隣接する発光素子のうち少なくとも1つの発光素子の発光面周辺に端部を有し、
前記複数の反射側面は、前記波長変換素子の中心部からの距離に応じて変化する密度で配置されている、発光デバイス。 - 前記予め形成された波長変換素子の前記少なくとも1つの反射側面を、反射コーティングが形成している、請求項1に記載の発光デバイス。
- 前記少なくとも1つの反射側面は傾斜した平坦面である、請求項1に記載の発光デバイス。
- 前記予め形成された波長変換素子の前記少なくとも1つの反射側面は鏡面反射性を有する、請求項1に記載の発光デバイス。
- 前記予め形成された波長変換素子が少なくとも1つの拡散反射面を含む、請求項1に記載の発光デバイス。
- 複数の反射側面の各反射側面を、反射コーティングが形成している、請求項1に記載の発光デバイス。
- 複数の反射側面の各反射側面は傾斜した平坦面である、請求項1に記載の発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361867773P | 2013-08-20 | 2013-08-20 | |
US61/867,773 | 2013-08-20 | ||
PCT/IB2014/063865 WO2015025247A1 (en) | 2013-08-20 | 2014-08-12 | Shaped phosphor to reduce repeated reflections |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020030015A Division JP7203060B2 (ja) | 2013-08-20 | 2020-02-26 | 発光デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016530725A JP2016530725A (ja) | 2016-09-29 |
JP6694815B2 true JP6694815B2 (ja) | 2020-05-20 |
Family
ID=51659970
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016535543A Active JP6694815B2 (ja) | 2013-08-20 | 2014-08-12 | 発光デバイス |
JP2020030015A Active JP7203060B2 (ja) | 2013-08-20 | 2020-02-26 | 発光デバイス |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020030015A Active JP7203060B2 (ja) | 2013-08-20 | 2020-02-26 | 発光デバイス |
Country Status (6)
Country | Link |
---|---|
US (2) | US10109774B2 (ja) |
EP (1) | EP3036777B1 (ja) |
JP (2) | JP6694815B2 (ja) |
KR (1) | KR102231532B1 (ja) |
CN (1) | CN105453282B (ja) |
WO (1) | WO2015025247A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104916760A (zh) * | 2015-05-08 | 2015-09-16 | 李峰 | 一种胶膜模腔式制作方法及其制成的胶膜 |
US10763404B2 (en) * | 2015-10-05 | 2020-09-01 | Maven Optronics Co., Ltd. | Light emitting device with beveled reflector and manufacturing method of the same |
TWI677114B (zh) * | 2015-10-05 | 2019-11-11 | 行家光電股份有限公司 | 具導角反射結構的發光裝置 |
US10230030B2 (en) | 2016-01-28 | 2019-03-12 | Maven Optronics Co., Ltd. | Light emitting device with asymmetrical radiation pattern and manufacturing method of the same |
TWI608636B (zh) | 2016-01-28 | 2017-12-11 | 行家光電股份有限公司 | 具非對稱性光形的發光裝置及其製造方法 |
CN107039572B (zh) * | 2016-02-03 | 2019-05-10 | 行家光电股份有限公司 | 具非对称性光形的发光装置及其制造方法 |
DE112017003086T5 (de) * | 2016-06-21 | 2019-03-14 | Soraa, Inc. | LED-Package |
CN107845717A (zh) * | 2016-09-21 | 2018-03-27 | 深圳市兆驰节能照明股份有限公司 | Csp光源及其制造方法和制造模具 |
US11333806B2 (en) | 2017-04-21 | 2022-05-17 | Lumileds Llc | Reliable light conversion device for laser-based light sources |
JP2019096689A (ja) * | 2017-11-21 | 2019-06-20 | シチズン時計株式会社 | 発光装置 |
JP6760321B2 (ja) | 2018-03-20 | 2020-09-23 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
KR102570949B1 (ko) * | 2018-12-21 | 2023-08-24 | 엘지디스플레이 주식회사 | 발광 다이오드 표시장치 |
JP7267836B2 (ja) * | 2019-05-16 | 2023-05-02 | スタンレー電気株式会社 | 発光装置 |
CN113043361A (zh) * | 2020-03-27 | 2021-06-29 | 深圳市聚飞光电股份有限公司 | 一种荧光片、led封装件及其制作方法 |
EP4173054B1 (en) | 2020-06-25 | 2023-12-27 | Signify Holding B.V. | Ceramic phosphor array |
EP4411844A4 (en) * | 2021-09-28 | 2025-03-05 | Kyocera Corp | ELECTROLUMINESCENT APPARATUS AND LIGHTING APPARATUS |
DE102021006411A1 (de) | 2021-12-30 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierendes bauelement |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020063520A1 (en) | 2000-11-29 | 2002-05-30 | Huei-Che Yu | Pre-formed fluorescent plate - LED device |
US6952079B2 (en) * | 2002-12-18 | 2005-10-04 | General Electric Company | Luminaire for light extraction from a flat light source |
JP3978514B2 (ja) * | 2002-12-24 | 2007-09-19 | 株式会社ナノテム | 発光素子の製造方法および発光素子 |
US7122800B2 (en) * | 2004-03-26 | 2006-10-17 | Lexmark International, Inc. | Optical density sensor |
JP2008010749A (ja) | 2006-06-30 | 2008-01-17 | Fine Rubber Kenkyusho:Kk | 発光装置およびその製造方法 |
KR101484461B1 (ko) * | 2006-12-21 | 2015-01-20 | 코닌클리케 필립스 엔.브이. | 성형된 파장 변환기를 가지는 발광 장치 |
JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
WO2009069671A1 (ja) | 2007-11-29 | 2009-06-04 | Nichia Corporation | 発光装置及びその製造方法 |
DE102008025923B4 (de) | 2008-05-30 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
US8957428B2 (en) * | 2008-09-25 | 2015-02-17 | Koninklijke Philips N.V. | Coated light emitting device and method for coating thereof |
CN102227827A (zh) * | 2008-11-28 | 2011-10-26 | 株式会社小糸制作所 | 发光模块、发光模块的制造方法以及灯具单元 |
DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
JP5379615B2 (ja) | 2009-09-09 | 2013-12-25 | パナソニック株式会社 | 照明装置 |
WO2012014360A1 (ja) * | 2010-07-26 | 2012-02-02 | 株式会社小糸製作所 | 発光モジュール |
KR20120024104A (ko) * | 2010-09-06 | 2012-03-14 | 서울옵토디바이스주식회사 | 발광 소자 |
US8445308B2 (en) * | 2010-10-15 | 2013-05-21 | Cooledge Lighting Inc. | Fabrication of phosphor dots and application of phosphor dots to arrays of lighting elements |
JP2013038115A (ja) | 2011-08-04 | 2013-02-21 | Koito Mfg Co Ltd | 光波長変換ユニット |
KR101853327B1 (ko) * | 2011-11-09 | 2018-05-02 | 삼성전자주식회사 | 발광소자 패키지의 제조방법 |
JP5856816B2 (ja) | 2011-11-14 | 2016-02-10 | 株式会社小糸製作所 | 発光装置 |
WO2013148276A1 (en) * | 2012-03-31 | 2013-10-03 | Osram Sylvania Inc. | Wavelength conversion structure for a light source |
US9773950B2 (en) * | 2012-04-06 | 2017-09-26 | Ctlab Co. Ltd. | Semiconductor device structure |
JP6097084B2 (ja) * | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
-
2014
- 2014-08-12 US US14/912,211 patent/US10109774B2/en active Active
- 2014-08-12 WO PCT/IB2014/063865 patent/WO2015025247A1/en active Application Filing
- 2014-08-12 CN CN201480046430.5A patent/CN105453282B/zh active Active
- 2014-08-12 EP EP14780600.4A patent/EP3036777B1/en active Active
- 2014-08-12 JP JP2016535543A patent/JP6694815B2/ja active Active
- 2014-08-12 KR KR1020167007235A patent/KR102231532B1/ko active Active
-
2018
- 2018-07-31 US US16/050,140 patent/US11171266B2/en active Active
-
2020
- 2020-02-26 JP JP2020030015A patent/JP7203060B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR102231532B1 (ko) | 2021-03-24 |
CN105453282B (zh) | 2020-12-15 |
US11171266B2 (en) | 2021-11-09 |
EP3036777B1 (en) | 2020-03-11 |
EP3036777A1 (en) | 2016-06-29 |
KR20160045119A (ko) | 2016-04-26 |
JP2016530725A (ja) | 2016-09-29 |
JP2020109849A (ja) | 2020-07-16 |
CN105453282A (zh) | 2016-03-30 |
WO2015025247A1 (en) | 2015-02-26 |
US20160190401A1 (en) | 2016-06-30 |
US10109774B2 (en) | 2018-10-23 |
US20190067534A1 (en) | 2019-02-28 |
JP7203060B2 (ja) | 2023-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6694815B2 (ja) | 発光デバイス | |
US10074786B2 (en) | LED with scattering features in substrate | |
KR102172934B1 (ko) | 플립-칩 측면 방출 led | |
US20090219716A1 (en) | Led optical lens | |
JP2010506402A (ja) | Ledのシステムおよび方法 | |
JP2009239313A (ja) | オプトエレクトロニクスデバイス | |
US20070284589A1 (en) | Light emitting device having increased light output | |
JP2018522385A (ja) | 角度に対する色の変化を低減するための光学要素を有する照明アセンブリ | |
CN105283969B (zh) | 具有基于发射场图案的图案化表面特征的led | |
TWI639255B (zh) | 在一晶片級封裝發光二極體之基板中的塑形空腔 | |
JP5395742B2 (ja) | 発光デバイス及び発光デバイスの製造方法 | |
KR100692432B1 (ko) | 측면 발광용 렌즈 및 발광 소자 | |
KR100912442B1 (ko) | 표면실장형 발광다이오드 소자 | |
JP2014011197A (ja) | 発光装置 | |
Lipnitskaya et al. | Investigation of light extraction from light emitting module chip-on-board | |
JP2008159435A (ja) | 照明器具 | |
TW201630216A (zh) | 發光二極體封裝結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160420 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170809 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180927 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190305 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20190307 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190705 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20190718 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190827 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20191125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200310 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200407 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200420 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6694815 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |