JP6608181B2 - Method for manufacturing liquid discharge head - Google Patents

Description

The present invention relates to a manufacturing method of the liquid ejection heads.

  The liquid discharge head is used in a liquid discharge apparatus such as an ink jet recording apparatus, and includes a discharge port forming member and a substrate. The discharge port forming member is formed of a resin or the like on the substrate (the surface side of the substrate), and the discharge port is opened on the discharge port surface. Further, the discharge port forming member forms a liquid flow channel communicating with the discharge port in the inside thereof. The substrate is formed of silicon or the like, and a liquid supply path that penetrates the substrate is formed in the substrate. The liquid is supplied from the liquid supply path to the liquid flow path, and the supplied liquid is supplied with energy by the discharge energy generating element of the substrate and is discharged from the discharge port to land on the recording medium.

  In order to make such a liquid discharge head higher quality and less expensive, the discharge port peripheral surface (hereinafter referred to as the face surface) of the discharge port forming member is made flat and on the liquid flow path of the discharge port forming member. There is a demand to reduce the thickness of the plate (hereinafter referred to as plate thickness).

  In the current liquid discharge head, the step on the surface side of the substrate is transferred to the face surface, and the face surface other than the discharge port is not flat. As a result, the recording quality may deteriorate unless the face surface is cleaned every predetermined liquid discharge. Further, when the plate thickness is increased, the discharge port path length is increased, and due to the resistance, droplets are likely to be divided and scattered during discharge, resulting in mist, and the print quality is lowered. Therefore, a thin plate thickness is desired. However, in the current liquid discharge head, thinning of the plate thickness decreases the accuracy of the distance distribution from the discharge energy generating element surface to the face surface, and the resin discharge port forming member has low strength, so Cracks may occur.

  In Patent Document 1, a flow path wall is formed, a mold material is embedded in a future flow path, the surface is polished by chemical mechanical polishing (CMP) to flatten the flow path wall upper surface, The flatness of the face surface is increased by a manufacturing method for forming a member.

  Patent Document 2 describes that the flow path wall structure is changed in order to suppress deformation of the discharge port and to improve the strength.

JP 2007-55240 A JP 2007-216416 A

  However, the method described in Patent Document 1 requires an additional step such as CMP, which increases the manufacturing cost. Even in the method described in Patent Document 2, if the thickness of the orifice plate is 5 μm or less, the strength of the member is insufficient, so that the deformation of the discharge port and the undulation of the face surface due to internal stress occur, and the desired discharge port shape can be maintained. It may disappear.

  Accordingly, an object of the present invention is to provide a liquid ejection head including an ejection port forming member that can maintain strength even when the thickness of the ejection port surface is reduced and has a flat face surface.

According to one aspect of the invention, there is provided a liquid discharge head in which a discharge port forming member including a flow path wall and a discharge port is formed on the first surface of an element substrate having a discharge energy generating element on a first surface. A manufacturing method comprising:
Forming an inorganic film containing diamond-like carbon on the surface of the mirror-treated support substrate;
Forming a photosensitive resin layer on the inorganic film;
A step of bonding an element substrate having a discharge energy generating element on the first surface on the first surface side on the photosensitive resin layer,
Removing the support substrate;
Exposing the photosensitive resin layer through the inorganic film to form a latent image on the flow path wall portion;
Forming a discharge port in the inorganic film;
Removing the unexposed portion of the photosensitive resin layer and curing the latent image to form a flow path wall;
A method of manufacturing a liquid discharge head is provided.

In one embodiment of the present invention, a liquid discharge device in which a discharge port forming member including a flow path wall and a discharge port is formed on the first surface of the element substrate having a discharge energy generating element on the first surface. A method of manufacturing a head,
Forming an inorganic film containing diamond-like carbon on the surface of the mirror-treated support substrate;
Forming a photosensitive resin layer on the inorganic film;
Exposing the photosensitive resin layer to form a latent image on the flow path wall portion;
A step of bonding an element substrate having an ejection energy generating element on the first surface on the first surface side on the photosensitive resin layer,
Removing the support substrate;
Forming a discharge port in the inorganic film;
Removing the unexposed portion of the photosensitive resin layer and curing the latent image to form a flow path wall;
A method of manufacturing a liquid discharge head is provided.

  According to the present invention, it is possible to provide a liquid discharge head that has a flat face surface and suppresses deformation of the discharge port even when the plate thickness is reduced.

It is a perspective view which shows an example of the liquid discharge head manufactured by this invention. It is typical sectional drawing which shows the manufacturing process (a)-(e) by 1st embodiment of the liquid discharge head which concerns on this invention. It is typical sectional drawing which shows the manufacturing process (f)-(j) by 1st embodiment of the liquid discharge head which concerns on this invention. It is typical sectional drawing which shows the manufacturing process (b)-(f) by 2nd embodiment of the liquid discharge head which concerns on this invention.

  FIG. 1 shows an example of a liquid discharge head manufactured by the present invention. The liquid discharge head 100 includes a device substrate 1 having a discharge energy generating element 2, a plate-shaped first member 7 that defines the discharge port 4, and a second portion that defines a wall portion (flow channel wall) of the flow path 9. The discharge port forming member 5 made of the member 8 is provided.

  Examples of the discharge energy generating element 2 include a heating resistor and a piezoelectric element. The discharge energy generating element may be formed so as to be in contact with the surface of the element substrate 1 or may be formed in a hollow shape so as to be partially separated from the surface of the element substrate.

  Examples of the main substrate of the element substrate 1 include a silicon substrate formed of silicon. An ejection energy generating element 2 is formed on the first surface (front surface) side of the substrate. The first surface and the second surface (back surface) which is the surface opposite to the first surface preferably have a crystal plane orientation of silicon of (100). That is, the main substrate is preferably a (100) substrate formed of silicon.

  A liquid supply path 3 is formed in the element substrate 1. The liquid supply path 3 is formed so as to penetrate from the first surface of the element substrate 1 to the second surface facing the first surface. The liquid supply path 3 communicates with the flow path 9. The ejection energy generating elements 2 are formed in two rows on both sides of the opening of the liquid supply path 3 on the first surface side of the element substrate 1. In addition to these, an insulating film, an anti-cavitation film, etc. (not shown) are formed on the substrate.

  The first member 7 of the discharge port forming member 5 is formed of an inorganic film containing diamond-like carbon (DLC). A discharge port 4 is formed in the first member 7 of the discharge port forming member 5, and the discharge port 4 is disposed at a position corresponding to the discharge energy generating element 2. DLC has high mechanical strength and can suppress cracks on the face surface and deformation of the discharge port 4 even with a film thickness of 5 μm or less. The second member 8 that defines the flow path wall is formed of a resin material. The liquid supplied from the liquid supply path 3 to the flow path 9 is given energy by the discharge energy generating element 2 and is discharged from the discharge port 4. There are terminals (bumps) 6 at the end of the element substrate 1, and the discharge energy generating element 2 connects the terminals 6 by electrically connecting the terminals to a liquid discharge apparatus (not shown) on which a liquid discharge head is mounted. It is electrically connected to the outside via. Thereby, generating the energy from the ejection energy generating element 2 in accordance with the ejection signal from the outside can eject the liquid from a desired ejection port.

  The liquid discharge head according to the present invention is not limited to the example shown in FIG. 1, and is a head corresponding to multiple colors, for example, one in which discharge port arrays corresponding to each color are arranged in parallel, or a discharge port array corresponding to each color. May be arranged in series.

  Next, the manufacturing process of the liquid discharge head of the present invention will be described with reference to FIG. 2 ([FIG. 2-1] and [FIG. 2-2]). FIG. 2 is a cross-sectional view of the manufacturing process according to the first embodiment including a portion corresponding to the cross section taken along line A-A ′ shown in FIG. 1.

  First, as shown in FIG. 2A, a support substrate 10 is prepared. Since the support substrate 10 is formed by forming an inorganic film constituting the first member 7, the support substrate 10 is not particularly limited as long as it can be separated from the formed inorganic film and has a flat surface. For example, a substrate having a mirror-finished surface such as a silicon substrate or a silicon oxide substrate is a desirable material. The surface flatness of the support substrate 10 is reflected in the surface flatness of the face surface of the manufactured liquid discharge head. For this reason, the difference between the maximum value and the minimum value (Total Thickness Variation: TTV) of the entire height of the support substrate measured in the thickness direction with the back surface of the support substrate as the reference surface is preferably 3 μm or less. An inorganic film serving as the first member 7 is formed on the surface (the mirror surface) of the support substrate 10 thus mirror-finished. When the first member 7 is thin, a DLC single layer film can be used as the inorganic film. As the thickness of the first member 7 increases, internal stress increases in a single layer film of DLC. Therefore, by adopting a laminated structure of DLC and a silicon carbide film (SiC film) such as SiC or SiCN, Internal stress may be reduced. As the laminated structure, an alternate laminated film of DLC and SiC-based films can be used. Since the side in contact with the support substrate 10 is the face surface (outermost surface) of the liquid ejection head, a water repellent layer of 0.5 μm or less may be provided on the face surface of the first member 7. As such a water-repellent layer, DLC doped with fluorine can be used. The method for forming the DLC or SiC film is not particularly limited, and can be formed by a known method. For example, DLC includes a chemical vapor deposition method such as a plasma CVD method in which a hydrocarbon gas such as acetylene is converted into plasma in a chamber and deposited on the support substrate 10, or a thermal CVD method in which a source gas is thermally decomposed and deposited. . It can also be formed by a physical vapor deposition method (PVD method) such as a vacuum vapor deposition method or a sputtering method.

  The thickness of the first member 7 is not particularly limited as long as it is in the range of the discharge port path length in which the liquid discharge from the discharge port 4 formed in a subsequent process can be normally performed, but is preferably 5 μm or less and preferably 4 μm or less. More preferred. Moreover, it is desirable that the thickness be able to withstand pressure changes during liquid discharge, external pressure, and the like, preferably 0.5 μm or more, and more preferably 1 μm or more.

Next, a photosensitive resin layer 8A to be the second member 8 is applied and formed on the first member 7 (FIG. 2B). The photosensitive resin layer 8A is made of a photosensitive material provided with photosensitivity by adding a photopolymerization initiator or the like using an acrylic resin or an epoxy resin as a base material. Moreover, it is preferable to adjust so that it may soften below 100 degreeC before this hardening. In order to improve the adhesion between the first member 7 and the second member 8, before the application of the photosensitive resin layer 8A, the upper surface of the first member 7 is treated with a silane coupling agent or an O ₂ plasma treatment. You may perform an adhesion improvement process.

  The thickness of the photosensitive resin layer 8A may be appropriately set according to the flow path height required for the finally formed liquid discharge head. Usually, it is formed to a thickness equal to or greater than the thickness of the first member 7, preferably 3 μm or more, and more preferably 5 μm or more. Further, the thickness of the photosensitive resin layer 8A is preferably 20 μm or less, and more preferably 10 μm or less.

  Next, as shown in FIG. 2 (c), the discharge energy generating element 2 is formed on the first surface, and the element substrate including the liquid supply path 3 penetrating from the first surface to the second surface. 1 is prepared, and the first surface side of the element substrate 1 is bonded onto the photosensitive resin layer 8A. At this time, it is preferable that the element substrate 1 is bonded under a low pressure to a vacuum in a state where the temperature is raised to the softening point or higher of the cured product of the photosensitive resin layer 8A. Usually, as the element substrate 1, a wafer size capable of collecting a large number of chips in which a predetermined number of ejection energy generating elements 2 and liquid supply paths 3 are formed in each chip is used. Therefore, it is preferable to select and use a wafer size equal to or larger than that of the element substrate 1 as the support substrate 10. At this time, the wafer-sized element substrate 1 is sucked and held on a wafer holding member (not shown) and bonded to the support substrate 10 with equal pressure so as not to cause a deviation in flow path height for each chip. Is preferred. Since the photosensitive resin layer 8A on the support substrate 10 is heated above the softening point of the cured film, it can be easily deformed even under low pressure. Further, the amount pushed into the liquid supply path 3 on the element substrate 1 side is the minimum, and bonding is performed so as to follow unevenness such as wiring (not shown) formed on the first surface of the element substrate 1. (FIG. 2D). The element substrate 1 is bonded to the support substrate 10 by a method in which the support substrate 10 is on the lower side and the element substrate 1 is on the upper side, and is bonded in a low pressure to a vacuum state. In the case where the first surface of the element substrate 1 is an inorganic material, in order to improve the adhesion with the second member 8 made of an organic material, the formation of the adhesion improving layer or the pretreatment as described above is performed on the element substrate 1. It may be applied on the first surface.

  In the method for manufacturing a liquid ejection head according to the present invention, since the support substrate 10 having a flat surface and sufficient strength is used, the surface of the first member 7 serving as the face surface is flat. In addition, since DLC is a substance having a high hardness as a carbon-containing inorganic film, its flatness can be maintained even after the support substrate 10 is removed.

After the bonding, the temperature is returned to a temperature below the softening point of the cured product of the photosensitive resin layer 8A, for example, room temperature, and the support substrate 10 is removed in a state where the fluidity of the photosensitive resin layer 8A is lost. When the support substrate 10 is removed, as shown in FIG. As a method for removing the support substrate 10, a removal method suitable for the material of the support substrate 10 may be applied without impairing the flatness of the first member 7. For example, if the supporting substrate 10 is silicon oxide, it can be removed by an etching method using hydrofluoric acid as an etching solution in a single wafer type spin etcher. Also, if the support substrate 10 is silicon, it is removed by etching with an etching solution containing alkali such as tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH) after shaving to a thickness of 50 μm or less with a grinder or the like. May be. At this time, it is desirable to use a single-wafer type spin etcher in which the etching solution does not reach the element substrate 1 side.
In this manner, after removing the support substrate 10, the photosensitive resin layer 8 </ b> A is patterned over the first member 7. For patterning, a mask 11 corresponding to the flow path 9 is used to expose a portion that becomes a flow path wall (FIG. 2F). At this time, since DLC contained in the inorganic film of the first member 7 has large i-line (wavelength 365 nm) absorption, exposure is performed with a long-wavelength exposure machine for h-line (425 nm) or more. The photosensitive material constituting the photosensitive resin layer 8A is prepared so as to have a sensitivity of 425 nm or more.

  After the exposure, heat treatment (post-exposure bake: PEB) is performed as necessary to cure the second member 8 serving as the flow path wall (FIG. 2G).

Next, a resist 12 for forming an ejection port is applied on the first member 7 and patterned using a mask 13 corresponding to the ejection port 4. At this time, a photosensitive material having sensitivity to i-line can be used as the resist 12. Although the photosensitive resin layer 8A in the discharge port formation area is unexposed, the first member 7 contains DLC that absorbs a large amount of i-line, so that the patterning is performed to the extent that the unexposed photosensitive resin layer 8A is not exposed. can do.
The discharge ports 4 are formed in the first member 7 by dry etching (FIG. 2 (i)).
The unexposed portion of the photosensitive resin layer 8A and the resist 12 used for forming the discharge port are simultaneously removed (FIG. 2 (j)).
Thereafter, the second member 8 is finally cured (mainly cured) to complete the liquid discharge head.

  In the manufacturing process according to the first embodiment, since the photosensitive resin layer 8A is exposed through the inorganic film, the photosensitive wavelength of the photosensitive material used for the photosensitive resin layer 8A is limited. However, the present invention is not limited to this, and the photosensitive resin layer 8A can be formed using a photosensitive material with no limitation on the photosensitive wavelength. Below, it demonstrates as 2nd embodiment.

  FIG. 3 is a process cross-sectional view illustrating a manufacturing process of the liquid ejection head according to the second embodiment, and includes a portion corresponding to a cross section taken along line A-A ′ shown in FIG. 1. In addition, the process similar to 1st embodiment shown in FIG. 2 is abbreviate | omitted.

2A, the first member 7 made of an inorganic film containing DLC is formed on the support substrate 10, and the photosensitive resin layer 8A is formed on the first member 7 (FIG. 3B). .
Next, as shown in FIG. 3C, the photosensitive resin layer 8A is exposed using a mask 14 having a flow path reversal pattern to form a latent image 8B on the flow path wall. Here, since it is not necessary to expose through the inorganic film which comprises the 1st member 7, the photosensitive material which has sensitivity to i line | wire can be used as a photosensitive material which comprises the photosensitive resin layer 8A. Of course, a photosensitive material having sensitivity in a shorter wavelength region than the i-line may be used. However, as the wavelength becomes shorter, the depth of focus becomes shallower, and exposure energy is used to form a flow path wall that requires a certain height. Need to increase. Therefore, it is preferable to use a photosensitive material having a sensitivity peak at a wavelength of 365 nm or more with an epoxy resin or an acrylic resin as a base material.

Next, as shown in FIG. 3 (d), the discharge energy generating element 2 is formed on the first surface, and the element substrate including the liquid supply path 3 penetrating from the first surface to the second surface. 1 is prepared, and the first surface side of the element substrate 1 is bonded onto the photosensitive resin layer 8A. At this time, it is preferable that the element substrate 1 is bonded under a low pressure to a vacuum in a state where the temperature is raised to the softening point or higher of the cured product of the photosensitive resin layer 8A. By raising the temperature, the curing reaction in the latent image 8B proceeds to become the second member 8 that becomes the flow path wall portion, and is further in close contact by being softened.
After that, as in the first embodiment, the ejection port 4 is formed in the first member 7 (FIG. 3E), the unexposed photosensitive resin layer 8A and the resist 12 are removed, and liquid ejection is performed. A head is manufactured (FIG. 3F).

  In the first and second embodiments described above, the element substrate 1 to be bonded to the support substrate 10 is the one in which the liquid supply path 3 is formed in advance, but the liquid supply path 3 is bonded to the support substrate 10. It may be formed. For example, if the support substrate 10 is a silicon substrate, the liquid supply path 3 can be formed simultaneously with the removal of the support substrate 10.

  In addition, the liquid supply path 3 has a multistage structure in which the common liquid chamber opened on the second surface side of the element substrate 1 and the discharge energy generating element 2 are sandwiched between the first surface side of the element substrate 1. Alternatively, it may be shaped like an individual supply path that is open.

  Next, the present invention will be described more specifically with reference to examples.

<Example 1>
In this embodiment, a silicon wafer (diameter: 200 mm, thickness: 725 μm, TTV: 3 μm or less) is used as the support substrate 10, and a 2 μm DLC film is formed by a CVD apparatus as an inorganic film constituting the first member 7. Filmed. A photosensitive resin layer 8A was applied as a photosensitive material 1 with a thickness of 5 μm using “TMMR” (registered trademark, photosensitive permanent film material for forming microchannels) manufactured by Tokyo Ohka Kogyo. This photosensitive material 1 has a composition prepared so as to have a sensitivity of 425 nm or more.
On the other hand, an element substrate 1 in which a liquid supply path 3 for supplying ink is formed on a silicon substrate on which an ejection energy generating element 2 is formed by a known method is prepared. The element substrate 1 and the support substrate 10 heated to a temperature equal to or higher than the softening point of the photosensitive resin layer 8A (45 ° C. in the above material) are bonded to each other with equal thickness under vacuum. After sufficiently cooling, in this example, the support substrate 10 was shaved with a grinder to 50 μm or less, and the remaining support substrate 10 was wet-etched with TMAH using a single wafer wet etching apparatus. Since DLC is not etched by TMAH, the support substrate 10 can be sufficiently removed.

  Next, as shown in FIG. 2 (f), the photosensitive resin layer 8A on the channel wall portion is exposed to form a latent image with an exposure machine having a broadband light source from the first member 7 side. Thereafter, a resist is applied and the discharge port is patterned. At this time, a resist having i-line sensitivity is used. In this example, “THMR (registered trademark) iP5700” manufactured by Tokyo Ohka Kogyo Co., Ltd. was used for exposure with i-line. At this time, since the i-line transmittance of DLC is about 30%, the photosensitive resin layer 8A was exposed with an exposure amount that does not start to cure. Thereafter, the DLC was etched by dry etching using the resist 12 as a mask to form the discharge ports 4.

  Since the remaining resist 12 and the unexposed photosensitive resin layer 8A can be dissolved in propylene glycol monomethyl ether acetate (PGMEA), the unexposed portions of the resist 12 and the photosensitive resin layer 8A were removed at once. At the time of removal, ultrasonic waves were added for removal. Thereafter, final curing was performed at 200 ° C. for 60 minutes. The completed substrate is separated and cut into chips by a dicing saw or the like. Thereafter, electrical joining for driving the ejection energy generating element 2 was performed, and then a chip tank member for supplying ink was connected to complete the ink jet head.

<Example 2>
In this embodiment, a glass wafer (diameter: 200 mm, thickness 1 mm, TTV: 3 μm or less) is used as the support substrate 10. An inorganic film serving as the first member was formed using a CVD apparatus. At this time, films of DLC and SiCN (C content 20%) were alternately laminated by 0.3 μm as an inorganic film, and finally formed to a thickness of 3 μm. Thereafter, a photosensitive resin layer 8A was applied and formed to a thickness of 8 μm using the same photosensitive material 1 as in Example 1. Thereafter, as in Example 1, the substrate 1 is bonded with equal pressure under vacuum. After sufficiently cooling, in this example, the supporting substrate was removed by wet etching with hydrofluoric acid using a single wafer type spin etcher. DLC and SiCN are not etched with hydrofluoric acid.
Thereafter, the inkjet head was completed by the same manufacturing process as in Example 1.

<Example 3>
In this embodiment, silicon (diameter: 200 mm, thickness: 725 μm, TTV: 3 μm or less) was used as a supporting substrate, and an inorganic film serving as a first member was formed using a CVD apparatus. At this time, a DLC film was formed to 3 μm as an inorganic film. 8 μm of “TMMR” (registered trademark) manufactured by Tokyo Ohka Kogyo Co., Ltd. was applied as a photosensitive material 2 on this inorganic film. This photosensitive material 2 is prepared so as to have a sensitivity of 365 nm. Next, as shown in FIG. 3C, a portion that becomes a flow path wall is exposed to form a latent image 8B. Of course, the mask 14 is patterned with a reversal pattern (mirror image) because it is transferred to the flow path wall. As shown in FIG. 3D, the ejection energy generating element 2 and the element substrate 1 on which the liquid supply path 3 is formed are aligned and bonded together. At this time, the support substrate 10 is bonded with a constant pressure under vacuum in a state where the support substrate 10 is heated to 90 ° C. or more which is the softening temperature of the cured film of the photosensitive resin layer 8A. Subsequently, after sufficiently cooling, the support substrate 10 was removed by wet etching with TMAH using a single wafer type spin etcher. Next, as shown in FIG. 3E, a resist 12 was applied and patterned in the same manner as in Example 1, and the discharge port 4 was formed by dry etching.

  The resist 12 and the unexposed photosensitive resin layer 8A were removed at once using PGMEA. At the time of removal, ultrasonic waves were added for removal. Thereafter, the second member 8 that becomes the liquid flow path was finally cured at 200 ° C. for 60 minutes. Thereafter, the silicon substrate is separated and cut into chips by a dicing saw or the like. Thereafter, the same manufacturing process as in Example 1 was completed.

<Evaluation>
The face surface of the liquid discharge head prepared by this production method was flat, the discharge port was not deformed, and there were no cracks.

DESCRIPTION OF SYMBOLS 1 Element substrate 2 Discharge energy generating element 3 Liquid supply path 4 Discharge port 5 Discharge port formation member 6 Terminal 7 1st member 8 2nd member 9 Flow path 10 Support substrate 100 Liquid discharge head

Claims (8)

A manufacturing method of a liquid discharge head, wherein a discharge port forming member having a flow path wall and a discharge port is formed on the first surface of an element substrate having a discharge energy generating element on a first surface,
Forming an inorganic film containing diamond-like carbon on the surface of the mirror-treated support substrate;
Forming a photosensitive resin layer on the inorganic film;
A step of bonding an element substrate having an ejection energy generating element on the first surface on the first surface side on the photosensitive resin layer,
Removing the support substrate;
Exposing the photosensitive resin layer through the inorganic film to form a latent image on the flow path wall portion;
Forming a discharge port in the inorganic film;
Removing the unexposed portion of the photosensitive resin layer and curing the latent image to form a flow path wall;
A method of manufacturing a liquid ejection head, comprising: The method of manufacturing a liquid discharge head according to claim 1 , wherein the photosensitive resin layer is formed of a photosensitive material having sensitivity to a wavelength of 425 nm or more. A manufacturing method of a liquid discharge head, wherein a discharge port forming member having a flow path wall and a discharge port is formed on the first surface of an element substrate having a discharge energy generating element on a first surface,
Forming an inorganic film containing diamond-like carbon on the surface of the mirror-treated support substrate;
Forming a photosensitive resin layer on the inorganic film;
Exposing the photosensitive resin layer to form a latent image on the flow path wall portion;
A step of bonding an element substrate having an ejection energy generating element on the first surface on the first surface side on the photosensitive resin layer,
Removing the support substrate;
Forming a discharge port in the inorganic film;
Removing the unexposed portion of the photosensitive resin layer and curing the latent image to form a flow path wall;
A method of manufacturing a liquid ejection head, comprising: The method of manufacturing a liquid discharge head according to claim 3 , wherein the photosensitive resin layer is formed of a photosensitive material having sensitivity to a wavelength of 365 nm or more. The support substrate, the manufacturing method of the liquid discharge head according to any one of claims 1 to 4 which is a silicon substrate or a silicon oxide substrate. The inorganic membrane, method for manufacturing a liquid discharge head according to any one of claims 1 to 5, which is a single layer film of diamond-like carbon. The inorganic membrane, method for manufacturing a liquid discharge head according to any one of claims 1 to 5, which is a laminated film of diamond-like carbon and silicon carbide-based film. The step of bonding an element substrate having an ejection energy generating element on the first surface on the first surface side on the photosensitive resin layer is performed at a temperature equal to or higher than a softening point of a cured film of the photosensitive resin layer. method for manufacturing a liquid discharge head according to any one of claims 1 to 7 carried out in a state heated to.

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