JP6554840B2 - Solid-state imaging device and solid-state imaging device heat dissipation method - Google Patents

Description

  The present invention relates to a solid-state imaging device and a solid-state imaging device heat dissipation method, and more particularly, to a solid-state imaging device and a solid-state imaging device heat dissipation method including a solid-state imaging element and a heat dissipation structure for both LSI and chip parts.

  In a conventional solid-state imaging device, heat generated during operation cannot be efficiently dissipated, and as the continuous imaging time of the solid-state imaging device elapses, the temperature rises due to heat generation during the imaging operation. As a result, the desired continuous imaging time cannot be achieved. In order to solve such a problem, it is disclosed in Japanese Patent Laid-Open No. 2013-98853 “Solid-State Imaging Device” of Patent Document 1 and Japanese Patent No. 3511463 “Solid-State Imaging Device and Large Area Solid-State Imaging Device” of Patent Document 2. Such a solid-state imaging device has been proposed.

  In Patent Document 1, a CCD (Charge Coupled Devices) type solid-state imaging device is intended to dissipate heat generated during operation with high efficiency. FIG. 5 is a cross-sectional view showing a cross-sectional structure of a solid-state imaging device described in Patent Document 1 as a conventional technique.

  As shown in FIG. 5, the solid-state imaging device 2A described in Patent Document 1 includes a solid-state imaging device 10, two semiconductor elements 50 and 60, a heat transfer member 80, a cooling block 84, and a circuit board. 110, and the heat generated from the solid-state imaging device 10 is transmitted to the two semiconductor elements 50 and 60 through the two bumps 59 and 69, respectively, to the two semiconductor elements 50 and 60. The transferred heat is transferred to the heat transfer member 80 through the underfill 74, and thereafter, the heat is radiated to the space from the cooling block 84 joined to the heat transfer member 80.

  Further, Patent Document 2 also aims to dissipate heat generated during operation with high efficiency in a CCD solid-state imaging device. FIG. 6 is a cross-sectional view showing a cross-sectional structure of a solid-state imaging device described in Patent Document 2 as a conventional technique.

  In the case of the solid-state imaging device 2A described in Patent Document 1 described above, as shown in FIG. 5, only a part (both ends) of the main surface of the solid-state imaging device 10 is used as a path for transmitting heat generated during operation. There is a problem that the heat generated during the operation of the solid-state imaging device 10 cannot be sufficiently dissipated. On the other hand, in the CCD type solid-state imaging device 31 described in Patent Document 2, the die pad surface 73 of the package 72 is smaller than the light incident surface of the image sensor 3 as shown in FIG. 3 has a structure in which the bonding surface 62 opposite to the light incident surface is bonded to the package 72, and heat generated by the image sensor 3 is transmitted from the bonding surface 62 bonded to a large area to the package 72. Thereafter, the cold finger 15 is transmitted to the cooler via the insulating substrate 42 and the mounting screw 8.

JP 2013-98853 A (page 4-5, FIG. 1) Japanese Patent No. 3511463 (page 3-4, FIG. 2)

  However, the conventional techniques described in Patent Document 1 and Patent Document 2 have the following problems.

  In the structure described in Patent Document 1, only a part (both ends) of the main surface of the solid-state imaging device 10 is used as a path for transmitting heat generated during operation, as described above with reference to FIG. In other words, the heat generated during the operation of the solid-state imaging device 10 cannot be sufficiently dissipated. Further, there is a problem that a temperature difference (temperature gradient) is generated between the central portion and the outer peripheral portion of the solid-state imaging device 10 and reliability of imaging data is lowered.

  In the technique described in Patent Document 2, as described above with reference to FIG. 6, the image pickup device 3 ( As a heat radiation path of the solid-state image pickup device), the package 72 that is in surface contact with the adhesive surface 62 opposite to the light incident surface of the image pickup device 3 has a smaller area than the light incident surface of the image pickup device 3, and the die pad surface of the package 72 73 also has a structure that is smaller than the light incident surface of the image sensor 3, and therefore cannot sufficiently dissipate heat generated during operation of the image sensor 3. Further, similarly to the case of Patent Document 1, there is a problem that a temperature difference (temperature gradient) occurs between the central portion and the outer peripheral portion of the image pickup device 3 and the reliability of the image pickup data is lowered.

  In addition, the same applies to the case of Patent Document 1, however, in the technique described in Patent Document 2, the electrical wiring 14 that transmits the electrical signal of the solid-state imaging device 31 and the cold finger that transmits heat to the refrigerator. 15 is not structured so as to explicitly form a connection between the circuit board 15 and the circuit board and the heat transfer member. Since the connection is not sufficient, there is a problem that heat generated by the circuit board cannot be radiated.

  That is, in the conventional techniques described in Patent Document 1 and Patent Document 2, as a heat dissipation technique of the solid-state imaging device, not only the heat radiation of the solid-state image sensor itself is insufficient, It is impossible to achieve both heat dissipation and circuit board heat dissipation at the same time.

(Object of the present invention)
The present invention has been made in view of such circumstances, and provides a solid-state imaging device and a solid-state imaging device heat dissipation method capable of achieving both sufficient heat dissipation of the solid-state imaging element and heat dissipation of the circuit board. That is the purpose.

  In order to solve the above-described problems, the solid-state imaging device and the solid-state imaging device heat dissipation method according to the present invention mainly adopt the following characteristic configuration.

(1) A solid-state imaging device according to the present invention includes:
A solid-state imaging device, a circuit board that transmits an electrical signal from the solid-state imaging device, an LSI (Large Scale Integrated Circuit) integrated with driving and reading signal processing units of the solid-state imaging device, a chip component, and the solid state A solid-state imaging device comprising at least a solid-state imaging element radiating fin that radiates heat generated by the imaging element and a mounting component radiating fin that radiates heat generated by the LSI and the chip component mounted on the circuit board Because
Bonding the entire main surface of the solid-state image sensor to the solid-state image sensor bonding region on the first main surface of the circuit board without gaps, and electrically connecting the solid-state image sensor and the circuit board;
The LSI and the chip component are mounted on the LSI / chip component mounting region on the first main surface of the circuit board to which the solid-state imaging device is bonded, and electrically connected to the circuit board,
The solid-state imaging element is disposed at a position on the second main surface of the circuit board opposite to the solid-state imaging element bonding region on the circuit board to which the solid-state imaging element is bonded. Join in a wider area than the effective pixel area of the element,
The LSI for mounting components is disposed at a position on the second main surface of the circuit board opposite to the LSI / chip component mounting area on the circuit board on which the LSI and the chip parts are mounted. -It is characterized in that bonding is performed in a region having the same area as the chip component mounting region or a region wider than the LSI / chip component mounting region.

(2) A solid-state imaging device heat dissipation method according to the present invention includes:
A solid-state imaging device, a circuit board that transmits an electrical signal from the solid-state imaging device, an LSI (Large Scale Integrated Circuit) integrated with driving and reading signal processing units of the solid-state imaging device, a chip component, and the solid state A solid-state imaging device comprising at least a solid-state imaging element radiating fin that radiates heat generated by the imaging element and a mounting component radiating fin that radiates heat generated by the LSI and the chip component mounted on the circuit board A solid-state imaging device heat dissipation method for dissipating heat generated from
Bonding the entire main surface of the solid-state image sensor to the solid-state image sensor bonding region on the first main surface of the circuit board without gaps, and electrically connecting the solid-state image sensor and the circuit board;
The LSI and the chip component are mounted on the LSI / chip component mounting region on the first main surface of the circuit board to which the solid-state imaging device is bonded, and electrically connected to the circuit board,
The solid-state imaging element is disposed at a position on the second main surface of the circuit board opposite to the solid-state imaging element bonding region on the circuit board to which the solid-state imaging element is bonded. Join in a wider area than the effective pixel area of the element,
The LSI for mounting components is disposed at a position on the second main surface of the circuit board opposite to the LSI / chip component mounting area on the circuit board on which the LSI and the chip parts are mounted. -It is characterized in that bonding is performed in a region having the same area as the chip component mounting region or a region wider than the LSI / chip component mounting region.

  According to the solid-state imaging device and the solid-state imaging device heat dissipation method according to the present invention, the following effects can be obtained.

  In the solid-state imaging device and the solid-state imaging device heat dissipation method according to the present invention, the entire main surface of the solid-state imaging element is joined to the first main surface of the circuit board on which the LSI and chip components are mounted without gaps, and the solid-state imaging A solid-state imaging element radiating fin having a bonding surface wider than the effective pixel area of the solid-state imaging element is bonded to a position on the second main surface on the back side (opposite side) of the circuit board facing the area where the entire element surface is bonded, In addition, for a mounting component having a bonding surface that is equal to or larger than the mounting region of the LSI and the chip component at a position on the second main surface on the back side (opposite side) of the circuit board facing the region where the LSI and the chip component are mounted. It has a structure in which radiating fins are joined.

  Thus, the heat generated in the solid-state imaging device can be efficiently radiated through the heat transfer path in the order of the circuit board and the solid-state imaging device, and the temperature difference (temperature gradient) in the solid-state imaging device. ) Can also be suppressed. Furthermore, the heat generated from the LSI or the chip component can be efficiently radiated through the heat transfer path in the order of the circuit board and the mounting component radiating fin.

  That is, since heat can be radiated from the entire main surface of the solid-state image sensor, it is possible to suppress the temperature gradient in the solid-state image sensor, and heat radiation from the entire main surface of the solid-state image sensor and on the circuit board. Since it has a structure that achieves both heat dissipation of the mounted LSI and chip parts, it can solve the problems of the prior art, and can efficiently dissipate heat generated during the operation of the solid-state imaging device, and the solid-state imaging device As the continuous imaging time elapses, the occurrence of a situation in which the temperature of the solid-state imaging device rises due to heat generation during the imaging operation and the imaging performance of the solid-state imaging device deteriorates is suppressed, and a desired continuous imaging time is achieved. Will be able to.

It is a block diagram which shows one structural example of the solid-state imaging device which concerns on 1st embodiment by this invention. It is a block diagram which shows the example of 1 structure of the solid-state imaging device which concerns on 2nd embodiment by this invention. It is a block diagram which shows the example of 1 structure of the solid-state imaging device concerning 3rd embodiment by this invention. It is a block diagram which shows the example of 1 structure of the solid-state imaging device which concerns on 4th embodiment by this invention. It is sectional drawing which shows the cross-section of the solid-state imaging device described in the said patent document 1 as a prior art. It is sectional drawing which shows the cross-section of the solid-state imaging device described in the said patent document 2 as a prior art.

  Preferred embodiments of a solid-state imaging device and a solid-state imaging device heat dissipation method according to the present invention will be described below with reference to the accompanying drawings. In addition, it is needless to say that the drawing reference numerals attached to the following drawings are added for convenience to each element as an example for facilitating understanding, and are not intended to limit the present invention to the illustrated embodiment. Yes.

(Features of the present invention)
Prior to the description of the embodiments of the present invention, an outline of the features of the present invention will be described first. In the solid-state imaging device and the solid-state imaging device heat dissipation method according to the present invention, a solid-state imaging device, a circuit board that transmits an electrical signal from the solid-state imaging device, and a drive and readout signal processing unit for the solid-state imaging device are integrated. LSI (Large Scale Integrated Circuit), chip component, heat radiation fin for solid-state image sensor that dissipates heat generated by the solid-state image sensor, and mounting that dissipates heat generated by the LSI and chip component mounted on the circuit board A heat-radiating fin for components, and the entire main surface of the solid-state imaging element is joined to the first main surface of the circuit board on which the LSI and the chip component are mounted without gaps, and Solid-state imaging having a bonding surface wider than the effective pixel region of the solid-state imaging device at a position on the second main surface on the back side of the circuit board facing the region where the entire surface of the solid-state imaging device is bonded A joining surface that is equal to or larger than the LSI and chip component mounting area is formed on the second main surface on the back side of the circuit board opposite to the area where the LSI heat dissipation fins are bonded and the LSI and chip component mounting areas. The main feature is to join the radiating fins for mounting components.

That is, the entire main surface of the solid-state image sensor is bonded to the solid-state image sensor bonding region on the first main surface of the circuit board without gaps, and the solid-state image sensor and the circuit board are electrically connected,
And, the LSI and the chip component are mounted on the LSI / chip component mounting region on the first main surface of the circuit board to which the solid-state imaging device is bonded, and electrically connected to the circuit board,
And, the heat radiation fin for the solid-state image sensor is located at a position on the second main surface of the circuit board opposite to the solid-state image sensor joint area on the circuit board to which the solid-state image sensor is joined. Join in a wider area than the effective pixel area of the solid-state image sensor,
The mounting component heat dissipating fin is positioned on the second main surface of the circuit board opposite to the LSI / chip component mounting area on the circuit board on which the LSI and the chip component are mounted. The main feature is that bonding is performed in a region having the same area as the LSI / chip component mounting region or a region wider than the LSI / chip component mounting region.

  Moreover, in the solid-state imaging device and the solid-state imaging device heat dissipation method according to the present invention, the solid-state imaging device further includes a relay board that relays connection between the solid-state imaging element and the circuit board. The main surface of the solid-state image sensor has a shape equal to or larger than that of the main surface, and the entire main surface of the solid-state image sensor is joined to the main surface of the relay board without any gap, and the back side of the main surface to which the solid-state image sensor is joined The main feature is that the entire main surface of the relay board on the side) is joined to the first main surface of the circuit board without any gap. Here, in the case where a relay board is further provided, the circuit board of the relay board is placed at a position on the second main surface on the back side of the circuit board facing the region where the entire surface of the relay board is bonded. The solid-state imaging element radiating fin having a joint surface wider than that of the joint region is joined.

In other words, further comprising a relay board for relaying the connection between the solid-state imaging device and the circuit board,
The main surface of the relay substrate is shaped to form a region having the same area as the main surface of the solid-state image sensor or a region wider than the main surface of the solid-state image sensor,
And while joining the whole main surface of the solid-state image sensor to the main surface of the relay board without a gap, and electrically connecting the solid-state image sensor and the relay board,
In addition, the entire main surface of the relay substrate opposite to the main surface of the relay substrate to which the solid-state imaging element is bonded is bonded to the relay substrate bonding region on the first main surface of the circuit board without any gap. And electrically connecting the relay board and the circuit board,
Further, the area where the solid-state imaging element radiating fin is bonded to the circuit board is shaped to form an area having the same width as the relay board bonding area or an area wider than the relay board bonding area,
In addition, the solid-state imaging element radiating fin may be bonded to a position on the second main surface of the circuit board opposite to the relay board bonding area on the circuit board to which the relay board is bonded. Main features.

  Thus, in the solid-state imaging device and the solid-state imaging device heat dissipation method according to the present invention, the heat generated in the solid-state imaging device is converted into heat transfer paths in the order of the circuit board, the radiation fins for the solid-state imaging device, or When the relay board is further provided, heat can be efficiently radiated by the heat transfer path in the order of the relay board, the circuit board, and the radiation fin for the solid-state image sensor, and the solid-state image sensor The temperature difference (temperature gradient) can also be suppressed. Furthermore, the heat generated from the LSI and the chip component can be efficiently radiated through the heat transfer path in the order of the circuit board and the mounting component radiating fin.

That is, in the solid-state imaging device and the solid-state imaging device heat radiation method according to the present invention, the heat radiation of the solid-state imaging device itself, which is generated in the conventional solid-state imaging device such as Patent Document 1 and Patent Document 2, is insufficient. In addition, it is possible to reliably solve the problem that it is impossible to achieve both heat dissipation of the circuit board, that is, the following problem.
(1) The problem that heat generated during operation of the solid-state image sensor is used as a path for transmitting only a part of the main surface of the solid-state image sensor, and the heat generated during operation of the solid-state image sensor cannot be sufficiently dissipated. .
(2) A problem that a temperature difference (temperature gradient) occurs between the central portion and the outer peripheral portion of the solid-state imaging device, and the reliability of the imaging data decreases.
(3) The problem that the heat generated by the circuit board cannot be radiated because the thermal connection between the circuit board and the heat transfer member was not sufficient.

(Configuration example of the first embodiment)
Next, a configuration example of the solid-state imaging device according to the present invention will be described with reference to FIG. FIG. 1 is a configuration diagram illustrating a configuration example of a solid-state imaging device according to the first embodiment of the present invention, and FIG. 1 (A) is a plan view viewed from above, and FIG. FIG. 1 is a front sectional view in the front direction, and FIG. 1C is a side sectional view in the right side direction.

  A solid-state imaging device 100 illustrated in FIG. 1 includes a solid-state imaging device 101, a relay substrate 102 that is electrically connected to the solid-state imaging device 101 using an electrical connection unit (not illustrated), and driving of the solid-state imaging device 101. And a circuit board 103 on which an LSI (Large Scale Integrated Circuit) 104 and a chip component 105 on which read signals are integrated, and a solid-state image sensor radiation fin 106 that dissipates heat generated by the solid-state image sensor 101. And mounting component heat radiation fins 107 that dissipate heat generated by the LSI 104 and the chip component 105 mounted on the circuit board 103.

  In the solid-state imaging device 100 of FIG. 1, the main surface of the relay substrate 102 is formed to be the same as or larger than the main surface of the solid-state imaging device 101 as shown in FIGS. 1B and 1C. (In the example shown in FIGS. 1B and 1C, the main surface of the relay substrate 102 is formed to be larger than the solid-state imaging device 101). The entire main surface of the solid-state image sensor 101 is joined to the main surface of the relay substrate 102 without a gap, and the solid-state image sensor 101 and the relay substrate 102 are electrically connected using an electrical connection means (not shown). ing.

  In addition, as shown in FIG. 1A, the relay substrate 102 to which the entire main surface of the solid-state imaging device 101 is bonded has a main surface size of the first main surface 103a and the second main surface of the circuit board 103. 1B and FIG. 1C, the entire main surface of the relay substrate 102 on the opposite side of the joint surface with the solid-state image sensor 101 is the first main surface 103a of the circuit board 103. The relay board 102 and the circuit board 103 are electrically connected using an electrical connection means (not shown).

  Further, the region (joint surface) where the solid-state imaging element radiating fin 106 is joined to the circuit board 103 is a solid disposed on the circuit board 103 via the relay board 102 as shown in FIG. An area that is wider than the effective pixel area of the image sensor 101, and preferably has the same width as the relay board bonding area 102a in the area where the main surface of the relay board 102 is bonded to the first main surface 103a of the circuit board 103 or a relay. On the second main surface 103b on the opposite side of the circuit board 103 facing the relay board bonding area 102a on the circuit board 103 to which the relay board 102 is bonded, and having a shape that forms a wider area than the board bonding area 102a Is joined to the position.

  Similarly, the region (bonding surface) where the mounting component heat radiation fin 107 is bonded to the circuit board 103 is such that the LSI 104 and the chip component 105 are placed on the first main surface 103a of the circuit board 103 as shown in FIG. A circuit board on which the LSI 104 and the chip component 105 are mounted, and has a shape that forms an area of the same area as the LSI / chip component mounting area 104a or a larger area than the LSI / chip component mounting area 104a. Bonded at a position on the second main surface 103 b opposite to the circuit board 103 facing the LSI / chip component mounting region 104 a on 103.

(Description of the manufacturing method of the first embodiment)
Next, an example of the manufacturing method of the solid-state imaging device 100 shown in FIG. 1 will be described.

  First, the entire main surface of the solid-state imaging device 101 is die-bonded to the main surface of the relay substrate 102 without gaps, and then electrical connection means (not shown) is used between the solid-state imaging device 101 and the relay substrate 102. Connect them electrically. Next, the entire main surface on the opposite side of the relay substrate 102 to which the solid-state imaging device 101 is electrically and mechanically connected (bonded) to the relay substrate bonding region 102a on the first main surface 103a of the circuit board 103 is formed. Further, the LSI 104 and the chip component 105 are mounted on the LSI / chip component mounting region 104a on the first main surface 103a of the circuit board 103, and the relay substrate 102, the LSI 104, and the chip component 105 are not shown. Electrical connection is made to the circuit board 103 using a general connection means. As a result, the relay substrate 102 and the LSI 104 and the chip component 105 are also electrically connected.

  As described above, the main surface of the relay substrate 102 has a shape that forms a region having the same area as the main surface of the solid-state image sensor 101 or a region wider than the main surface of the solid-state image sensor 101.

  Here, as an electrical connection means between the circuit board 103 and the relay substrate 102 to which the solid-state image sensor 101 is electrically and mechanically connected, for example, wire bonding, solder connection, anisotropic conductive paste connection Etc. are preferred. In addition, wire bonding, solder connection, anisotropic conductive paste connection, and the like are preferable for the electrical connection means between the LSI 104 and the chip component 105 and the circuit board 103.

  Thereafter, the circuit board 103 facing the position of the relay board bonding region 102a on the first main surface 103a of the circuit board 103 to which the relay board 102 to which the solid-state imaging device 101 is electrically and mechanically connected is bonded. A solid-state imaging element radiating fin 106 is joined to the position of the second main surface 103b on the opposite side. Note that the solid-state imaging element radiating fin 106 is preferably bonded to the second main surface 103b of the circuit board 103 by using an adhesive or the like having brazing or high thermal conductivity.

  Similarly, the position of the second main surface 103b opposite to the circuit board 103 opposite to the position of the LSI / chip component mounting region 104a on the first main surface 103a of the circuit board 103 on which the LSI 104 and the chip component 105 are mounted. The mounting component radiating fins 107 are joined to each other. The mounting component radiating fins 107 are also preferably joined to the second main surface 103b of the circuit board 103 by using an adhesive or the like having brazing or high thermal conductivity.

  In addition, as described above, the region (joint surface) where the solid-state image sensor radiating fin 106 is joined to the circuit board 103 is wider than the effective pixel region of the solid-state image sensor 101, preferably the main surface of the relay substrate 102. Is formed to have the same area as the relay board bonding area 102a in the area bonded to the first main surface 103a of the circuit board 103 or a wider area than the relay board bonding area 102a. Similarly, as described above, the LSI 104 and the chip component 105 are mounted on the first main surface 103 a of the circuit board 103 in the region (joint surface) to be joined to the circuit board 103 of the mounting component radiating fin 107. The area is the same as the area of the LSI / chip component mounting area 104a or the area wider than the LSI / chip component mounting area 104a.

  Moreover, as a material of the relay substrate 102 and the circuit board 103, a material having high thermal conductivity is preferable. Typically, a material based on AlN (aluminum nitride) is preferable.

  Similarly, the material of the solid-state imaging element radiating fin 106 and the mounting component radiating fin 107 is preferably a material having high thermal conductivity. Typically, a material based on CuW (copper tungsten) is preferable. Alternatively, the material of the solid-state imaging element radiating fin 106 and the mounting component radiating fin 107 is the same as the material of the relay substrate 102 and the circuit board 103, or the physical properties (particularly, thermal conductivity / thermal expansion coefficient, etc.) For example, AlN (aluminum nitride) may be selected, and by using such a material, the relative thermal resistance can be minimized, and the thermal expansion accompanying the temperature change Shape deformation due to the coefficient difference can also be suppressed to a minimum.

(Configuration example of the second embodiment)
Next, another configuration example different from FIG. 1 of the solid-state imaging device according to the present invention will be described with reference to FIG. FIG. 2 is a configuration diagram showing a configuration example of a solid-state imaging device according to the second embodiment of the present invention, and FIG. 2 (A) is a plan view viewed from above, and FIG. FIG. 2 is a front sectional view in the front direction, and FIG. 2C is a side sectional view in the right side direction.

  Unlike the solid-state imaging device 100 according to the first embodiment shown in FIG. 1, the solid-state imaging device 100 </ b> A shown in FIG. 2 has no relay substrate 102, and as shown in FIG. The entire main surface is directly bonded to the solid-state imaging element bonding region 101 a on the first main surface 103 a of the circuit board 103. Other parts are the same as those of the solid-state imaging device 100 shown in FIG.

(Description of manufacturing method of the second embodiment)
With respect to the method for manufacturing the solid-state imaging device 100A shown in FIG. 2, an example of steps different from those in the first embodiment will be described.

  First, the solid image pickup device 101 and the circuit board 103 are bonded to the first main surface 103a of the circuit board 103 by die-bonding the entire main surface of the solid image pickup device 101 without gaps in the region of the solid image pickup device bonding region 101a. Are electrically connected using electrical connection means (not shown). About the manufacturing method of another site | part, it is the same as that of the case of 1st embodiment.

  However, in the second embodiment, as described above, since the relay substrate 102 does not exist, the region (joint surface) where the solid-state imaging element radiating fin 106 is joined to the circuit board 103 is shown in FIG. As shown in C), the solid-state imaging of the area wider than the effective pixel area of the solid-state imaging device 101, preferably the whole main surface of the solid-state imaging device 101 is joined to the first main surface 103a of the circuit board 103. A shape that forms the same area as the element bonding area 101a or a larger area than the solid-state imaging element bonding area 101a is formed.

  A solid-state imaging device 100A according to the second embodiment shown in FIG. 2 includes a solid-state imaging device 101 and a solid-state imaging device radiating fin 106 as compared with the solid-state imaging device 100 shown in FIG. 1 as the first embodiment. Since the relay substrate 102 is not interposed therebetween, heat transport can be performed more efficiently, and the solid-state imaging element radiating fin 106 can be reduced in size.

(Configuration example of the third embodiment)
Next, another configuration example different from FIGS. 1 and 2 of the solid-state imaging device according to the present invention will be described with reference to FIG. FIG. 3 is a block diagram showing an example of the configuration of the solid-state imaging device according to the third embodiment of the present invention. FIG. 3 (A) is a plan view seen from above, and FIG. FIG. 3 is a front sectional view in the front direction, and FIG. 3C is a side sectional view in the right side direction.

  3 is different from the solid-state imaging device 100 according to the first embodiment shown in FIG. 1 and the solid-state imaging device 100A according to the second embodiment shown in FIG. The image pickup device 101 is electrically and mechanically connected (joined) to the circuit board 103 via each relay substrate 102 (FIGS. 3A and 3C). As shown in FIG. 2, the case where two solid-state imaging devices 101 are electrically (mechanically) connected (joined) via respective relay substrates 102 is illustrated. Other parts are the same as those of the solid-state imaging device 100 according to the first embodiment shown in FIG. 1 and the solid-state imaging device 100A according to the second embodiment shown in FIG.

  Therefore, the solid-state imaging device 100B shown in FIG. 3 is compared with the solid-state imaging device 100 according to the first embodiment shown in FIG. 1 and the solid-state imaging device 100A according to the second embodiment shown in FIG. Since a plurality of solid-state image sensors 101 are integrated, there is an advantage that the total number of pixels of the solid-state image sensor 101 can be increased while suppressing an increase in mounting area.

(Configuration example of the fourth embodiment)
Next, another example of the configuration of the solid-state imaging device according to the present invention, which is different from FIGS. 1 to 3, will be described with reference to FIG. FIG. 4 is a configuration diagram showing a configuration example of a solid-state imaging device according to the fourth embodiment of the present invention, and FIG. 4 (A) is a plan view seen from above, and FIG. Fig. 4 is a front sectional view in the front direction, and Fig. 4C is a side sectional view in the right side direction.

  A solid-state imaging device 100C shown in FIG. 4 includes the solid-state imaging device 100 according to the first embodiment shown in FIG. 1, the solid-state imaging device 100A according to the second embodiment shown in FIG. 2, and the first shown in FIG. Unlike the solid-state imaging device 100B according to the third embodiment, on the first main surface 103a of the circuit board 103, the area around the relay board bonding region 102a to which the relay board 102 is bonded or when the relay board 102 does not exist is solid. The chip component 105 is also arranged and mounted around the solid-state image sensor joining region 101a to which the image sensor 101 is joined (in the case of FIG. 4, the case where the relay substrate 102 is present is illustrated). Yes. Regarding other parts, the solid-state imaging device 100 according to the first embodiment shown in FIG. 1, the solid-state imaging device 100A according to the second embodiment shown in FIG. 2, and the third embodiment shown in FIG. The same configuration as that of the solid-state imaging device 100B according to FIG.

  However, in the fourth embodiment, as described above, the chip component 105 that generates heat during operation is also disposed around the relay substrate bonding region 102a or around the solid-state imaging device bonding region 101a. As shown in FIG. 4C, the region where the heat radiating fin 106 is bonded to the circuit board 103 is wider than the effective pixel area of the solid-state imaging device 101, preferably the main surface of the relay substrate 102. When there is no relay substrate bonding region 102a or relay substrate 102 in the region where the entirety is bonded to the first main surface 103a of the circuit board 103, the entire main surface of the solid-state imaging device 101 is the first main surface of the circuit board 103. In addition to the solid-state imaging element bonding area 101a in the area bonded to the surface 103a, the relay substrate bonding area 102a or the solid-state imaging element bonding area 101a It is shaped to form a larger area than the extension junction region 102b of the same size or extension junction area 102b is an area obtained by adding the mounting area of the chip component 105 arranged in circumference.

  Therefore, the solid-state imaging device 100C shown in FIG. 4 has chips disposed not only on the solid-state imaging element 101 but also around the relay board bonding area 102a or around the solid-state imaging element bonding area 101a by the solid-state imaging element radiating fins 106. Since the component 105 can also effectively dissipate heat, the solid-state imaging device 100 according to the first embodiment shown in FIG. 1 and the solid-state imaging device 100A according to the second embodiment shown in FIG. Compared to the solid-state imaging device 100B according to the third embodiment shown in FIG. 3 and FIG. 3, for example, it is effective when it is necessary to dispose a chip component 105 that generates heat in the vicinity of the solid-state imaging device 101 in terms of electrical characteristics. Is.

(Description of effects of the solid-state imaging device of each embodiment)
As described in detail above, the following effects can be obtained mainly in the above-described embodiments.

  In the second embodiment, the entire main surface of the solid-state image sensor 101 is connected to the first main surface 103a of the circuit board 103 without a gap, and the LSI 104 and the chip component 105 are in the same direction as the solid-state image sensor 101. 103, which is mounted on the first main surface 103a and wider than the effective pixel area of the solid-state image sensor 101 on the circuit board 103, preferably with respect to the area of the solid-state image sensor 101 (solid-state image sensor junction area 101a). Area on the first main surface 103a to which the solid-state imaging element 101 is joined (solid-state imaging element joining area 101a). And a mounting region (LSI for the LSI 104 and the chip component 105). A region on the first main surface 103a on which the LSI 104 and the chip component 105 are mounted with the mounting component radiating fin 107 having a bonding surface formed in a shape (region) that is equal to or larger than the chip component mounting region 104a). It is joined at a position on the second main surface 103b opposite to the circuit board 103 facing the (LSI / chip component mounting region 104a).

  Thus, the heat generated in the solid-state image sensor 101 can be efficiently radiated through the heat transfer path in the order of the circuit board 103 and the solid-state image sensor radiating fin 106, and the temperature in the solid-state image sensor 101 can be radiated. The difference (temperature gradient) can also be suppressed. Further, the heat generated from the LSI 104 and the chip component 105 can be efficiently radiated through the heat transfer path in the order of the circuit board 103 and the mounting component radiating fins 107.

  Further, when the relay substrate 102 is provided as in the first and third embodiments, the main surface of the relay substrate 102 to which the entire main surface of the solid-state image sensor 101 is joined without a gap is used as the solid-state image sensor. The entire main surface on the opposite side of the relay substrate 102 to which the solid-state imaging device 101 is bonded is bonded to the first main surface 103a of the circuit board 103 without a gap. In addition, the LSI 104 and the chip component 105 are mounted on the first main surface 103a of the circuit board 103 in the same direction as the relay board 102 to which the solid-state imaging device 101 is connected (joined), and the solid-state imaging on the circuit board 103 is performed. The bonding surface is formed in a shape (region) that is larger than the effective pixel region of the element 101, and preferably larger than or equal to the region of the relay substrate 102 (the relay substrate bonding region 102a). The body imaging element radiating fin 106 is bonded to a position on the second main surface 103b opposite to the circuit board 103 facing the region on the first main surface 103a to which the relay substrate 102 is bonded (relay substrate bonding region 102a). In addition, the mounting component radiating fins 107 each having a bonding surface formed in a shape (region) that is equal to or larger than the mounting region of the LSI 104 and the chip component 105 (LSI / chip component mounting region 104a) The chip component 105 is bonded to a position on the second main surface 103b opposite to the circuit board 103 facing the region (LSI / chip component mounting region 104a) on the first main surface 103a on which the chip component 105 is mounted.

  Thus, the heat generated in the solid-state imaging device 101 can be efficiently radiated through the heat transfer path in the order of the relay substrate 102, the circuit board 103, and the solid-state imaging device radiating fin 106, and the solid-state imaging device. The temperature difference (temperature gradient) in 101 can also be suppressed. Further, as in the case where the relay substrate 102 does not exist, the heat generated from the LSI 104 and the chip component 105 can be efficiently radiated through the heat transfer path in the order of the circuit substrate 103 and the mounting component heat radiation fins 107. .

  That is, since heat can be radiated from the entire main surface of the solid-state image sensor 101 regardless of the presence of the relay substrate 102, a temperature gradient can be suppressed in the solid-state image sensor 101 and the solid-state image sensor can be used. The heat radiation from the entire main surface of the element 101 and the heat radiation of the LSI 104 and the chip component 105 mounted on the circuit board 103 can be made compatible. Therefore, the problem of the conventional technique can be solved, and the heat generated during the operation of the solid-state imaging device 100 can be efficiently radiated, and as the continuous imaging time of the solid-state imaging device 100 elapses, the heat generated during the imaging operation Occurrence of a situation in which the temperature of the solid-state imaging device 100 rises and the imaging performance of the solid-state imaging device 100 decreases is suppressed, and a desired continuous imaging time can be achieved.

  The solid-state imaging device according to the present invention suppresses the situation of imaging performance degradation caused by temperature rise due to heat generation during imaging operation with the lapse of continuous imaging operation time, and can obtain a desired imaging time. Can be suitably used even in a long scene.

  The configuration of the preferred embodiment of the present invention has been described above. However, it should be noted that such embodiments are merely examples of the present invention and do not limit the present invention in any way. Those skilled in the art will readily understand that various modifications and changes can be made according to a specific application without departing from the gist of the present invention.

2A Solid-state image pickup device 3 Image pickup device 8 Mounting screw 10 Solid-state image pickup device 14 Electrical wiring 15 Cold finger 31 Solid-state image pickup device 42 Insulating substrate 50 Semiconductor element 59 Bump 60 Semiconductor element 62 Adhesive surface 69 Bump 72 Package 73 Die pad surface 74 Underfill 80 Transmission Thermal member 84 Cooling block 100 Solid-state imaging device 100A Solid-state imaging device 100B Solid-state imaging device 100C Solid-state imaging device 101 Solid-state imaging device 101a Solid-state imaging device bonding region 102 Relay substrate 102a Relay substrate bonding region 102b Extended bonding region 103 Circuit substrate 103a First main Surface 103b Second main surface 104 LSI (Large Scale Integrated Circuit)
104a LSI / Chip Component Mounting Area 105 Chip Component 106 Radiation Fin 107 for Solid-State Image Sensor 107

Claims (10)

A solid-state imaging device, a circuit board that transmits an electrical signal from the solid-state imaging device, an LSI (Large Scale Integrated Circuit) integrated with driving and reading signal processing units of the solid-state imaging device, a chip component, and the solid state A solid-state imaging device comprising at least a solid-state imaging element radiating fin that radiates heat generated by the imaging element and a mounting component radiating fin that radiates heat generated by the LSI and the chip component mounted on the circuit board Because
Bonding the entire main surface of the solid-state image sensor to the solid-state image sensor bonding region on the first main surface of the circuit board without gaps, and electrically connecting the solid-state image sensor and the circuit board;
The LSI and the chip component are mounted on the LSI / chip component mounting region on the first main surface of the circuit board to which the solid-state imaging device is bonded, and electrically connected to the circuit board,
The solid-state imaging element is disposed at a position on the second main surface of the circuit board opposite to the solid-state imaging element bonding region on the circuit board to which the solid-state imaging element is bonded. Join in a wider area than the effective pixel area of the element,
The LSI for mounting components is disposed at a position on the second main surface of the circuit board opposite to the LSI / chip component mounting area on the circuit board on which the LSI and the chip parts are mounted. A solid-state imaging device characterized in that bonding is performed in a region having the same area as the chip component mounting region or a region wider than the LSI / chip component mounting region.   A plurality of the solid-state imaging devices are joined to the solid-state imaging device joining regions on the first main surface of the circuit board without gaps, and the solid-state imaging devices are electrically connected to the circuit board. The solid-state imaging device according to claim 1.   The solid-state imaging device according to claim 1, wherein an aluminum nitride material is used as a base material of the circuit board. A relay board that relays connection between the solid-state imaging device and the circuit board;
The main surface of the relay substrate is shaped to form a region having the same area as the main surface of the solid-state image sensor or a region wider than the main surface of the solid-state image sensor,
Joining the entire main surface of the solid-state image sensor to the main surface of the relay board without any gap and electrically connecting the solid-state image sensor and the relay board,
The entire main surface of the relay substrate opposite to the main surface of the relay substrate to which the solid-state imaging element is bonded is bonded to the relay substrate bonding region on the first main surface of the circuit board without any gap and the The solid-state imaging device according to claim 1, wherein the relay substrate and the circuit substrate are electrically connected. The area where the solid-state imaging element radiating fin is bonded to the circuit board is shaped to form an area having the same width as the relay board bonding area or an area wider than the relay board bonding area,
The solid-state imaging element radiating fin is bonded to a position on the second main surface of the circuit board opposite to the relay board bonding area on the circuit board to which the relay board is bonded. The solid-state imaging device according to claim 4.   The solid-state imaging device according to claim 4, wherein an aluminum nitride material is used as a base material of the relay substrate. On the first main surface of the circuit board to which the solid-state image sensor or the relay board is bonded, the chip components are arranged and mounted around the solid-state image sensor or the relay board,
Wherein a region in which the solid-state imaging device for radiation fins are bonded to the circuit board, the solid-junction region or extension junction area measuring plus the chip component regions disposed further around the relay substrate bonding region A shape that forms a region that is the same area as or a region that is wider than the extended joining region,
Any said solid-state imaging device for radiation fins of the circuit to 4 claims, characterized in that joined to the extension junction region and position on the second major surface opposing the opposite side of the circuit board on the substrate 6 A solid-state imaging device according to claim 1.   The solid-state imaging device according to any one of claims 1 to 7, wherein a copper tungsten material is used as a base material of the radiation fin for the solid-state imaging element and the radiation fin for the mounting component. The base material of the solid-state image sensor radiating fin and the mounting component radiating fin is the same material as the base material of the solid-state image sensor or the relay substrate, or the base material of the solid-state image sensor or the relay The solid-state imaging device according to claim 4, wherein a material having a physical property value close to that of the substrate is used. A solid-state imaging device, a circuit board that transmits an electrical signal from the solid-state imaging device, an LSI (Large Scale Integrated Circuit) integrated with driving and reading signal processing units of the solid-state imaging device, a chip component, and the solid state A solid-state imaging device comprising at least a solid-state imaging element radiating fin that radiates heat generated by the imaging element and a mounting component radiating fin that radiates heat generated by the LSI and the chip component mounted on the circuit board A solid-state imaging device heat dissipation method for dissipating heat generated from
Bonding the entire main surface of the solid-state image sensor to the solid-state image sensor bonding region on the first main surface of the circuit board without gaps, and electrically connecting the solid-state image sensor and the circuit board;
The LSI and the chip component are mounted on the LSI / chip component mounting region on the first main surface of the circuit board to which the solid-state imaging device is bonded, and electrically connected to the circuit board,
The solid-state imaging element is disposed at a position on the second main surface of the circuit board opposite to the solid-state imaging element bonding region on the circuit board to which the solid-state imaging element is bonded. Join in a wider area than the effective pixel area of the element,
The LSI for mounting components is disposed at a position on the second main surface of the circuit board opposite to the LSI / chip component mounting area on the circuit board on which the LSI and the chip parts are mounted. A solid-state imaging device heat dissipation method characterized in that bonding is performed in a region having the same area as the chip component mounting region or a region wider than the LSI / chip component mounting region.

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