JPS6034059A - Photoelectric conversion input device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a photoelectric conversion input device, and more particularly to a photoconductive conversion input device that can stably output optical signals such as image information as electrical signals over a long period of time.

[Prior art]

In recent years, with the development of electronic technology, various image transmission systems and image processing systems are becoming popular. In this type of system, a photoelectric conversion input device that inputs image information as an optical signal and outputs it as an electrical signal is an important device that influences the performance of the entire system. For this reason, there is a strong need to develop a photoelectric conversion input device with excellent performance.

Conventionally, photodiode type photosensors and photoconductive type photosensors are known as photosensors used in photoelectric conversion input devices. The photodiode type photosensor has a problem in that the value of the output signal is small because the maximum number of carriers generated per incident photon is a pair of electron and hole. On the other hand, the light guide type 7 otosensor can also use carriers injected from the electrode, so
It has the advantage that a large output signal value can be obtained.

The use of amorphous silicon (hereinafter referred to as a-8i) as a material constituting the light receiving portion of a photoconductive photosensor is very effective for increasing the area and length of the photosensor. However, conventional photosensors using a-8t have a problem in that when exposed to light for a long time, the photoconductivity decreases, resulting in a small output signal value.

For example, a conventional photosensor using the generally known a-8t has a photoconductivity of 10 (Ω
・Illuminance 10 for 1000 hours
10" (Ω・) by irradiation with 00 lx green light
It drops to about -1. Such a reduction in photoconductivity not only makes it impossible to stably output an input optical signal as an electrical signal, but also requires an expensive or complicated circuit to deal with greatly changing output signal values.

Therefore, a-8 that does not cause a decrease in photoconductivity over a long period of time.
As a photosensor using t, elements of group m of the periodic table (
For example, a-8iK doping of boron) has been proposed. This kind of photosensor can be used at an illuminance of 10 as shown in Figure 2, which shows the change in photoconductivity with respect to the light irradiation time.
Even if irradiation with green light of 00 lx is continued, almost no change in conductivity is observed. However, the photoconductivity σp, fl 10
((Ω・cIrL) ~ 1), which negates the advantage of photoconductive photosensors in that they can obtain high output signal values. Therefore, even if the S/N ratio is sufficient, this A photoelectric conversion input device using a photosensor requires accurate reading of minute signal changes, resulting in higher costs and more complex circuits.

In addition, those with high conductivity immediately after fabrication, that is, those that can obtain a large output signal value, have a photoconductivity σ immediately after fabrication.
The ratio between e and dark conductivity σ-, that is, the S/N ratio is very poor. Therefore, although such a sensor can provide a high output signal value, it has been considered difficult to use it for practical purposes.

Therefore, the conventional photoelectric conversion input device using a photosensor as described above has the problem that if the device is used for a long period of time, the optical input signal cannot be accurately converted into an electrical signal and output. are doing. In addition, photoelectric conversion input devices that can operate accurately over a relatively long period of time use complex circuits and expensive components that can cope with changes in the S/N ratio of the photosensor and changes in the output signal value. It has the problem of high price.

〔the purpose〕

The invention was made in view of the problems mentioned above,
An object of the present invention is to provide a photoelectric conversion input device that can stably output an optical input signal as an electrical signal even during long-term use.

Another object of the present invention is to provide a photoelectric conversion input device in which the circuit used in the device can be simplified and the cost can be reduced.

The uninvented charge conversion input device is a photoelectric conversion input device including an amorphous material based on silicon formed on a substrate, in which the photosensor is exposed to a temperature atmosphere immediately after its fabrication or during its fabrication process. The value of the dark conductivity of the photoconductive layer measured after leaving the photosensor in an atmosphere at a temperature substantially lower than that for at least 2 hours and returning it to room temperature is 10' (Ω·on) or more. and a cooling means for cooling the photocell.

Incidentally, the electrical conductivity of the photoconductive layer described in the present invention refers to the electrical conductivity between the electrodes electrically connected to the photoconductive layer. Therefore, when an electrode is formed on the photoconductive layer via an ohmic contact layer, the electrode can be used as an electrode for measuring conductivity. Further, in the case of a photosensor, since at least one pair of electrodes is formed, this electrode can be used as it is as an electrode for measuring conductivity.

The non-invention is that when the inventors irradiate light onto the photosensor, the value of conductivity decreases a-S i as light=wa*al
zLJ:l--iMjLm-/4-MMIrAll-B
iJk) Photosensor that not only stabilizes the conductivity after the conductivity value decreases to a certain level even after repeated use, but also provides a good S/N ratio and high output signal value. Based on the discovery of

The present invention will be explained in more detail below using the drawings.

The present inventors irradiated light onto a photosensor of a photoconductive panel using a-Si with various initial values of photoconductivity σp and dark conductivity σd as a photoelectric conversion section, and accompanying σp
Check the changes in and σ4. The results will be explained using FIGS. 3 to M5.

Figure 3 is a diagram showing the initial conductivity of each photosensor of samples A to sample E, σ- and σ- immediately after fabrication of each of the 7 photosensors.
It is shown. Note that σp is the photoconductivity when green light with an illuminance of 1000 (A'x) is irradiated. As shown in FIG. 3, samples with a large value of σP (hereinafter referred to as σp0) immediately after the photosensor fabrication also had a large value of σd (hereinafter referred to as σdo) immediately after fabrication. In particular, in Sample A and Sample B, there is no difference between σp and σd11 to the extent that they can be clearly distinguished as signals in practical terms, and in this state they cannot be used as photosensors. Also, σd・is 10'(
Sample C, which had a larger value than Ω・cm )−', also had σd・
The ratio of σp and σd and the S/N ratio due to clogging were lower than those of samples with a value smaller than 1O-7(Ω·cIrL)-1. Regarding sample E, although the S/N ratio was sufficient, the conductivity value was too small to be practical. still,
Among the above samples, samples A to C are photosensors suitable for use in the photoelectric conversion input device of the present invention, and samples A, S, and E are conventional photosensors.

Next, the present invention will be explained using FIG. 4, which shows changes in conductivity with respect to light irradiation time.

As mentioned earlier, if a photosensor is continuously irradiated with light, the conductivity value of some photosensors gradually decreases. In Figure 4,
That is shown. The electrical conductivity of Samples A through Sample 3 all decreased due to continued light irradiation. Sample E shows almost no change in conductivity even after continued light irradiation, but
Since sample E is doped with the above-mentioned element of group Ⅰ of the periodic table, its conductivity value is smaller than the range that can be practically used as a photosensor. The conductivity value of the sample, which is a conventional 7-point sensor, continues to decrease as light irradiation continues. For this reason, if the value of the output signal of the 7-point sensor is determined to be within a certain desired value range, it will deviate from that range as the light irradiation continues.

However, if the range is set as a region with sufficient width, the circuit will become complicated and the cost will increase. The conductivity of the photosensors suitably used in the photoelectric conversion input device of the present invention represented by Samples A to Sample C also changes due to light irradiation. At the same time, if the light irradiation continues for a certain period of time, the conductivity will hardly change and the characteristics of the photo sensor will become stable. Furthermore, as the light irradiation continues, the S/N ratio also improves.

That is, the dark conductivity immediately after fabrication, which was conventionally considered unsuitable for use as a photosensor, was 10((Ω・cm)−
Even if the sensor has a value of 1 or more, the characteristics can be stabilized by irradiating it with light for a desired period of time, and a high output signal value with good S/Na can be obtained.

In the present invention, irradiating the fabricated photosensor with light other than input/output signals for the purpose of stabilizing the characteristics of the photosensor is hereinafter referred to as aging. Aging is performed until the conductivity value stabilizes to some extent. Specifically, after aging is stopped, other light irradiation other than aging, such as inputting an optical signal, is performed, resulting in τ
If the change in photoconductivity value does not require changes to the circuit that drives the photosensor or prevents accurate conversion of optical signals into electrical signals, then You can stop aging with .

The light intensity of the light irradiated to the photosensor 7 during aging may be greater or smaller than the light intensity incident on the photosensor when inputting an image. In either case, aging is completed by irradiating light to the extent that the value of the signal output by the photosensor during image input does not change significantly even after long-term image input. . Even if the output characteristics of the photosensor are not completely constant due to clogging, aging may be terminated when the change in the output characteristics becomes gentle.

An example of a case where the light intensity incident on the photosensor during image input and the light intensity irradiated onto the photosensor during aging are different is shown in Figure 5, which shows the change in photoconductivity with respect to light irradiation time. explain. In FIG. 5, aging is performed using green light with an illuminance of 10.0.00 (/x). As shown in FIG. 5, even if the illuminance of the light source undergoing aging is much higher than the subsequent illuminance, the aging effect can be sufficiently recognized by aging for an appropriate period of time. In FIG. 5, the photoconductivity for the aging time is the value under an illuminance of 10,000 (/X), and the photoconductivity for the light irradiation time is the value under the illuminance of 1,000 (/x).

It is desirable that the light source used during aging does not contain much infrared component (heat ray component) in its spectral distribution. Furthermore, even if it is included, it is desirable that the amount of energy be as small as possible compared to the amount of energy of other wavelength components. This is because if the photosensor is irradiated with a large amount of infrared components, the photosensor will be heated and a heat treatment effect as described below will occur, and aging may not be carried out effectively.

Therefore, the light used for aging should preferably be light containing a wavelength of 750nnn or less, more preferably the amount of energy in the infrared component is smaller than the energy amount of other components, and most preferably It is desirable that the light has a wavelength of 750 nm or less.

Light sources with the above wavelength components include solid-state light-emitting devices such as light-emitting diodes and solid-state lasers, gas lasers,
Various commonly known light sources can be used, such as discharge tubes, fluorescent lamps, and incandescent bulbs. In order to remove infrared components from the irradiated light, it is highly preferable to perform aging using a spectral filter, a spectral mirror, etc.

Furthermore, in order to make the heat treatment effect less likely to occur even if the photosensor is heated by the infrared component contained in the irradiation light, aging may be performed while cooling the photosensor appropriately.

The photosensor used in the photoelectric conversion device of the present invention is one that has been aged as described above.

Next, the definition and heat treatment immediately after fl of the photosensor mentioned above will be explained.

Immediately after fabrication of the photosensor in the present invention means that a
-S i and at least one pair or more of opposing electrodes are formed. In other words, this is the state of the 7 otosensors before light irradiation. This state can be maintained by storing the photosensor without irradiating it with light, or by storing it so that even if it is irradiated with light, the total amount of light irradiated onto the photosensor is small.

Even if the photosensor has a reduced conductivity value due to light irradiation, it can be returned to almost the same state immediately after the fabrication of the above-mentioned 7 photosensors by applying heat treatment. Therefore, this heat treatment will be explained using FIG. 6.

In the present invention, the return of the photosensor to the state before light irradiation by such heat treatment is referred to as a heat treatment effect.

The example shown in Figure 6 shows an example in which a photosensor whose conductivity value has decreased by irradiating the photosensor with green light with an illuminance of 1000 (l!x) for 1000 hours is subjected to heat treatment. . The sample used here is the sample A mentioned above.
Samples E to E were used.

In Figure 6, each of the samples 7 to 7 with reduced conductivity values is shown.
1 in a nitrogen stream at a temperature of 200°C.
An example in which heat treatment was performed for several hours is shown. As a result, as shown in FIG. 6, the heat treatment effect was observed in all of Samples A to E, and the conductivity of each sample returned to almost the value immediately after preparation.

The heat treatment must be carried out at an appropriate temperature and atmosphere for an appropriate time. This can also be seen from the diagram shown in FIG. 7, which shows the relationship between heat treatment temperature and treatment time. That is, the heat treatment effect can be more effectively produced by performing the heat treatment for a long time in an atmosphere at as high a temperature as possible. In Figure 7, the straight line 70
1 is the photocurrent value flowing in the photosensor before heat treatment, the straight line 702 is the photocurrent value immediately after the photosensor is manufactured, and the curve 703
Curve 704 is when the heat treatment time is 30 minutes, and curve 704 is when the heat treatment time is 2 hours. The temperature atmosphere in which the heat treatment is performed is:
It is better if the temperature is lower than the maximum temperature of the temperature atmosphere that the photosensor passes through when manufacturing the photosensor (maximum temperature atmosphere when manufacturing the photosensor), but it is better to have a temperature atmosphere that does not exceed that temperature as much as possible. This is advantageous in performing desired heat treatment in a short time.

Therefore, the temperature atmosphere during the heat treatment of the present invention is preferably lower than the actual maximum temperature atmosphere during the fabrication of the photosensor, and preferably 300°C in consideration of the temperature at which the photosensor is fabricated. Below, optimally 20
Although it is desirable that the temperature be 0° C. or lower, if the temperature is too low, the heat treatment effect will be slow and the treatment time will be longer, so it is more desirable that the lowest temperature atmosphere during the heat treatment be 80° C. or higher.

The heat treatment time is also related to the heat treatment temperature, but it is preferable that the heat treatment be carried out for 2 hours or more, more preferably 30 minutes or more.The maximum treatment time for the heat treatment is determined by the heat treatment temperature,
It may be determined as appropriate in consideration of workability, heat treatment effect, etc.

In the present invention, the heat treatment does not have to be carried out in a nitrogen stream, but may be carried out in various gases such as the air, hydrogen stream, argon stream, etc., or in vacuum, and the same applies in such cases. A significant heat treatment effect was observed. however,
In either case, the heat treatment has a sufficient heat treatment effect (heat treatment effect such that the conductivity value of the photosensor does not change even if further heat treatment is applied, or the change is extremely small)
It is necessary to do so.

The heat treatment effect described above can be observed slowly even in an atmosphere with a temperature around room temperature.In actual photoelectric conversion input devices, heat sources such as transformers and motors are generally incorporated, so photosensors are It is fully expected that the device will be placed in an atmosphere with a temperature higher than room temperature. Even in such a temperature atmosphere, as the frequency of use of the device increases, optical signals are frequently input to the 7 otosensors, and a treatment similar to the aging referred to in the present invention is performed, so the heat treatment effect is not so significant. In addition, if the device is not used for a long period of time, or if the device is used infrequently, the temperature of the photosensor may increase due to the heat sources mentioned above, or the temperature of the device may be left unused. The heat treatment effect cannot be ignored depending on the environment. Particularly in the photosensor used in the present invention, the occurrence of heat treatment effects is an important problem because it leads to deterioration of the performance of the photosensor.

This will be explained using FIG. 8. FIG. 8 is a characteristic diagram of the environment in which the photosensor is left unused. Here, the photo sensor suitably used in the photoelectric conversion input device of the present invention has an illuminance of 10
Aging was performed by irradiating with green light of 000 (lx) for 20 hours. The photosensor was left in the dark and changes in conductivity were measured. The temperature environment in which the photosensor was left was set to three times: 25°C, 45'0°C, and 70°C.

As a result, it was found that the higher the temperature at which the sample was left, the greater the heat treatment effect. Also, as the heat treatment effect appears, the value of σd increases, so the S/N ratio (i.e. σp/σ
4) decreased.

Therefore, the present invention cools the photosensor, its surroundings, or both so that the temperature does not become high, so that the heat treatment effect does not occur or is difficult to occur in the photosensor under normal usage conditions. .

Cooling means for cooling the photosensor, its surroundings, or both may include a heat vibrator, an electronic cooling element, a heat radiation fin, forced air, etc., or a suitable combination thereof.

The heat treatment effect is not so much of a problem if the device is used frequently and the time during which optical signals are input to the photosensor is long, but it is better to provide a cooling means to suppress the heat treatment effect. By providing a cooling means, the reliability of the device is further increased and high performance can be maintained regardless of the frequency of use.

7 Electrical conductivity σd immediately after Otosensor fabrication (or immediately after heat treatment)
・, σp・ The simplest method to control is a-8i
This method involves doping the layer with an element belonging to Group V of the periodic table. This doping is performed using silane gas (SiH, Si&
) When producing the a-8i layer using the glow discharge decomposition method described in can be done. Moreover, periodic table V
The required concentration of the gas containing the group element is, for example, less than 10-1 for SiH gas, and at this concentration,
There is almost no fear of environmental pollution.

Note that the electrical conductivity σdo Hσ immediately after the photosensor is manufactured (or immediately after heat treatment). The method of controlling is not limited to the above method.

[Fu example]

Hereinafter, one embodiment of a photosensor suitably used in the photoelectric conversion input device of the present invention will be described.

First, a cleaned glass substrate (manufactured by Corning, 7059 glass) was placed on the anode in a glow discharge device, and then the vacuum inside the device was set to 10 Torr. Next, high-purity monosilane gas (5iH4) was simultaneously flowed into the apparatus at a flow rate of 108 CCM, and phosphine gas (PH3) diluted to 10 MM with high-purity hydrogen gas (Toku) at a flow rate of 58 CCM.

At this time, the pressure inside the device is 0. It was kept at ITorr.

Next, a high frequency wave with a frequency of 13.56 ifilz was applied between the parallel plate electrodes to generate a glow discharge. Approximately 7000 A-8i layers were then deposited on the glass substrate. At this time, the glass substrate was kept at 200'0. Subsequently, SiH, at a flow rate of 2 SCCM, and PH diluted to 100 OIII with high purity hydrogen gas (H2) were added.
, gas is flowed into the device at a flow rate of 108 CCM, and a glow discharge is caused in the same way to form a low resistance n-type on the a-8i layer.
Approximately 1000 + layers were deposited.

Furthermore, after depositing A/ on the n+ layer by about 1,000 person deposition method, the parts other than the portions that will become electrodes are removed using normal photolithography technology. The deposited layer was removed.

Next, the exposed n+ layer was removed by dry etching using the A/electrode as a mask to complete the photosensor.

FIG. 9 is a schematic plan view showing the gap-type photoconductive type 7 sensor used in this example. In FIG. 9, 901 is the a-8i layer, 9
02 is a common electrode, and 903 is an individual electrode. The light receiving part was shaped like a comb. Common 1 energizing electrode 902 and individual electrode 9
It is between 03 and 03.

The photosensor of this example is a line sensor as shown in FIG. 9, and the line sensor is used by connecting a drive circuit as shown in FIG. 10 as an example.

The resistor 1001 in FIG. 10 is the line sensor of this embodiment. A wiring 1002 connected to a power source 1004 is connected to the common electrode 902 . On the other hand, a wiring 1003 is connected to the individual electrode 903, and a photocurrent storage capacitor 1005 is connected to the wiring 1003 with one terminal grounded. Further, the wiring 1003 connects an FET 1006 for discharging accumulated charges and an FET for extracting charges.
1007, respectively.

FET 1006 and FET 1007 are turned on and off by gate signal line 1008 and gate signal line 1009, respectively.
It will be turned off. FIT by gate signal line 1009
By turning on 1007, the optical signal accumulated as a charge in the capacitor 1005 is transferred to the system register 101.
After that, it is amplified by an amplifier 1011 and output as a time series signal. Incidentally, by turning on the FET 1006 through the gate and signal line 1008, unnecessary charges accumulated in the capacitor 1005 can be removed.
x) was irradiated with green light for 20 hours. Note that the photosensor in this example corresponds to sample B shown in FIG.

The line sensor after aging was incorporated into a facsimile machine, which is one of the photoelectric conversion input devices. Figure 11 1
11 and 11 are schematic cross-sectional views of the image input portion of the facsimile machine used in this embodiment. Figures 11 al and 11 (bl) show an example in which the heat pipe structure is incorporated into the substrate.

11-) and FIG. 11 1al, 1101 is a substrate, 1102 and 1103 are electrodes connected to the line sensor, 1104 is a driving IC chip, 1105 is a heat dissipation fin, 1106 is a SELFOC 1/ns array,
07 is an LED array 1108 for a document, 1109 is a document guide, and 1110 is a working liquid.

A heat pipe structure is incorporated in the substrate 1101, and is configured so that heat is radiated by the heat radiation fins 1105 and heat is absorbed around the line sensor installation portion. Electrode 11
The gap between 02 and 1103 is the light receiving section of line 7/su. The light from the LED array 1107 that is reflected according to the difference in reflectance of the original 1108 is focused by the SELFOC lens array 1106 and guided to the light receiving section. The document 1108 is positioned by the document guide 1109. FIG. 11 tbl is a schematic enlarged view of the broken line portion shown in FIG. 11(8). As shown in the figure, fine grooves are cut inside the substrate 1101 so that the working fluid, which is a heat medium, can move using capillary action. Further, the pressure in the hollow part of the substrate 1101 is reduced, and when heat from the line sensor and its surroundings is transmitted through the outer wall, the working fluid 1110 evaporates. This steam is caused by the minute pressure difference that occurs inside the hollow part, causing the heat radiation fins to
Move to the 105 side. Heat is radiated on the radiation fin 1105 side, and the steam condenses and returns to liquid. The working fluid 1110 that has returned to liquid form is transported to the line sensor side again by capillary action. Due to this recombination, the line 7/bay and its surroundings are constantly cooled, and the line sensor does not have an atmosphere at a temperature that is such that the heat treatment effect becomes noticeable.

The grooves formed on the substrate 1101 are formed in the vertical and horizontal directions, that is, on the substrate surface. This makes it possible to make the temperature distribution of the substrate more uniform.

It is preferable to place the heat radiation fins 1105 outside the device from the viewpoint of heat radiation effect. Further, an even further cooling effect can be obtained by applying forced air from a fan or the like to the fins.

Although water was used as the working fluid in this example, any working fluid used in normal heat pipes can be used as long as it does not cause chemical changes with the substrate. Although alumina was used because of its workability, various abrasive materials can be used for this material.

The facsimile machine of this embodiment having the above-mentioned configuration was able to stably input images for a much longer period of time than the facsimile machine not provided with a cooling means.

In the embodiment of the present invention, an example was shown in which a heat pipe was used as a cooling means for the photosensor. Many commonly known cooling means can be used. Furthermore, it is perfectly acceptable to appropriately combine heat pipes and means such as the above-mentioned a to cl.

Although the heat pipe does not have to be integrated with the board as in this embodiment, it is important to improve the cooling efficiency because other elements such as ICs arranged on the same board in addition to the photosensor (line sensor) are similarly cooled. This is an excellent method in that it can effectively suppress the generation of electrical noise.

In order for the photoelectric conversion input device according to the present invention to operate stably over a longer period of time, it is desirable to keep the cooling means in operation at all times. In this case, the heat pipe shown in this embodiment is very preferable because it does not require a power source for cooling and can operate even when the device is not powered on. In addition to the cooling means, an aging means for irradiating light other than the optical input signal may be provided for the purpose of stabilizing the characteristics of the photosensor. For aging at this time, any light source under the same conditions as the aging described above can be suitably used. In addition, the light source used in this aging means may be a light source exclusively for aging, or may be used in common with a light source for irradiating documents, etc. In this case, aging is performed when the device is not inputting images, Light irradiation for aging and light irradiation for documents, etc. are distinguished by a switching means. Therefore,
If the light source is shared, image input is prevented during aging.

〔effect〕

As described above, according to the present invention, a photoelectric conversion input device is provided that allows stable input of images and the like over a long period of time.

Furthermore, according to the present invention, even when using a photosensor that has a dark conductivity of 1O-7 (Ω・crtt)-1 or more immediately after fabrication or immediately after heat treatment, which was conventionally considered unsuitable as a photosensor, it is still very good. A photoelectric conversion input device capable of inputting images is provided.

Furthermore, according to the present invention, not only can stable input of images etc. be performed over a long period of time with a very simple configuration, but also the output of the 7 otosensors is stable even with a very simple circuit. It is possible to input stable images and the like over a long period of time. Therefore, a photoelectric conversion input device that is very cost-effective is provided.

It goes without saying that the present invention is not limited to the configuration of the photoelectric conversion input device described in the embodiments.

Furthermore, the photoelectric conversion input device of the present invention can be used in the image signal input portion of various image input devices such as digital copying machines and image readers other than the facsimile machine used in the embodiment, which reads images and outputs them as electrical signals. can also be used.

Therefore, it goes without saying that the images to be read include not only general originals but also barcodes, mark sheets, and the like.

Furthermore, in the present invention, a device that senses the brightness of an image,
For example, a light meter can also be called a photoelectric conversion input device in a broad sense.

[Brief explanation of the drawing]

Figures 1, 2, 4, and 5 are diagrams showing changes in photoconductivity with respect to light irradiation time, Figure 3 is a diagram showing initial conductivity, and Figure 6 is a diagram showing heat treatment effects. , FIG. 7 is a diagram showing the relationship between heat treatment temperature and treatment time. FIG. 8 is a partial plan view of a preferred embodiment of a line sensor using the photosensor of the present invention, and FIG. 10 is a line sensor shown in FIG. 9. FIG. 2 is a drive circuit diagram showing an example of a circuit that drives the. FIG. 11 1b+ is a schematic cross-sectional view of the image input part, and FIG. 11 1b+ is the first
FIG. 1 is a schematic enlarged view of the portion shown in FIG. 1b+. 901...-a-8t layer, 902-, common electrode, 9
o3...Individual electrode, 1001...Resistance, 100
2, 10031, wiring, 1004...power supply, 10
05... Capacitor. 1006, 1007...FET, 1008,
1009...Gate signal line, 1010...Shift register, 1011...Amplifier, 1ioi...
Substrate, 1102, 1103... Electrode, 1104
...Driver IC chip, 1105...Radiation fin, 1106...Selfoc lens array. 1107...LED array, 1108...Manuscript,
1109... Original guide, 1110... Operating fluid. 11th Makayakusha Akebono (＃に弯f光) Figure 2 Light packaging M@Kaku (ymvk section color senior) Ichiwa -! ; -5-4-34 1070To 70 fo 10 Send number electric type (translation) -'l1oooom tugboat (, f2-
C butt)-1 16s, klvtWiA OtmO(bJH, @, 16
) Figure 5 (,9apt)-'8ρ county l〃? 4 Ri゛(: (“C”) processing Masuri Fuyuu, ■ liri/ π Nanchu α dark space

Claims (1)

[Claims] In a ninety-nine electric conversion input device comprising a photoconductive type photosensor formed on a substrate and using an amorphous material having silicon as a matrix for a photoconductive layer, the photosensor is used immediately after its fabrication or immediately after its fabrication. The temperature atmosphere during the manufacturing process is such that the dark conductivity of the photoconductive layer measured after the photosensor is placed in a substantially low temperature atmosphere for at least two hours and then returned to room temperature is 10 (Ω·cIrL). ) A photoelectric conversion input device having the above structure and further comprising a cooling means for cooling the photosensor.