JP6454820B1 - 非破壊検査装置 - Google Patents
非破壊検査装置 Download PDFInfo
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- G—PHYSICS
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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- G—PHYSICS
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2985—In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis)
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V5/00—Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity
- G01V5/20—Detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects
- G01V5/22—Active interrogation, i.e. by irradiating objects or goods using external radiation sources, e.g. using gamma rays or cosmic rays
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
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- H—ELECTRICITY
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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Abstract
Description
図1に非破壊検査装置100の機能ブロック図を示す。非破壊検査装置100は、電磁波照射手段110、搬送手段120、電磁波検出手段130、読み出し手段140、加算手段150、及び表示手段151を備える。
図5は、Y軸方向に4個の検出素子1、2、3、4が配列されて構成された検出素子群を、X軸方向にa列からf列まで6列配列して構成した第2実施形態の電磁波検出手段130の例を示す図である。
第2実施形態の構成をとった上で、それぞれの検出素子群について、検出素子群に属する各検出素子の、同一の被検出領域と対向する形状や位置を適切に相違させることで、TDI方式の効果をより高めることができる。
40、140、140a、140b…読み出し手段
100…非破壊検査装置
110…電磁波照射手段
120…搬送手段
150…加算手段
151…表示手段
160、170…基板
161、171…端子列
W…被測定物
Claims (11)
- 検査対象物に所定の電磁波を照射する電磁波照射手段と、
搬送面に載置された前記検査対象物をY軸方向に搬送する搬送手段と、
前記Y軸方向に配列されたM個(Mは2以上の整数)の検出素子からなる検出素子群が、前記Y軸方向に直交するX軸方向にN列(Nは2以上の整数)配列されてなる電磁波検出手段と、
M×N個の前記検出素子のそれぞれと前記電磁波検出手段の前記Y軸方向のいずれか一端の外側にある所定の接続先との間を電気的に接続するM×N本の配線と、
を備え、
前記電磁波検出手段は面的に構成され、前記搬送面との対向状態が固定されている
ことを特徴とする非破壊検査装置。
- 前記電磁波検出手段は、前記Y軸方向にM行、前記X軸方向にN列の格子状に前記検出素子が配列され、少なくとも1行について、互いに隣接する検出素子間に前記配線が通線されていないことを特徴とする請求項1に記載の非破壊検査装置。
- 前記電磁波検出手段と前記M×N本の配線は同一基板上に形成されることを特徴とする請求項1又は2に記載の非破壊検査装置。
- 前記検出素子群に属する各検出素子からの前記配線は、前記電磁波検出手段の前記X軸方向の同じ一端側に隣接する検出素子群との間に通線され、かつ、前記一端は全ての前記検出素子群において同じであることを特徴とする請求項1から3のいずれか1項に記載の非破壊検査装置。
- 前記所定の接続先は、前記配線ごとに設定され、M×N個の前記検出素子のそれぞれと1対1で接続される接続先であることを特徴とする請求項1から4のいずれか1項に記載の非破壊検査装置。
- 前記所定の接続先は、前記電磁波検出手段の前記Y軸方向の他端の外側にも設けられ、
それぞれの前記検出素子群について、前記検出素子群に属する各検出素子からの配線は、互いに隣接するいずれかの検出素子間を境界として、前記一端側にある検出素子からは前記一端の外側にある前記所定の接続先に、前記他端側にある検出素子からは前記他端の外側にある前記所定の接続先に、それぞれ接続される
ことを特徴とする請求項1から5のいずれか1項に記載の非破壊検査装置。 - 前記境界は、Mが偶数のときには前記境界を挟む検出素子の個数が(M/2)個ずつになるように、Mが奇数のときには((M+1)/2)個、((M−1)/2)個になるように、設定されることを特徴とする請求項6に記載の非破壊検査装置。
- それぞれの前記検出素子群について、前記搬送手段により搬送される前記検査対象物の略同一の領域を透過した電磁波を順次検出する、前記検出素子群に属する各検出素子は、検出の際に前記略同一の領域と対向する形状及び/又は対向する位置関係がそれぞれ異なることを特徴とする請求項6又は7に記載の非破壊検査装置。
- 前記電磁波検出手段は、前記電磁波照射手段から前記検査対象物が載置された部分の搬送面を経て前記電磁波検出手段に到達する電磁波の伝搬経路において、前記搬送面との離隔距離が前記電磁波照射手段と前記搬送面との離隔距離より短い位置に配置されて、前記検査対象物を透過してきた前記電磁波を検出する
ことを特徴とする請求項1から8のいずれか1項に記載の非破壊検査装置。 - 前記電磁波検出手段は、前記搬送手段の内部に設けられて、前記検査対象物を透過してきた前記電磁波を検出する
ことを特徴とする請求項1から9のいずれか1項に記載の非破壊検査装置。 - 前記電磁波検出手段と前記M×N本の配線とからなる電磁波検出モジュールが、前記X軸方向に複数個配列されて構成されていることを特徴とする請求項1から10のいずれか1項に記載の非破壊検査装置。
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PCT/JP2017/038376 WO2019082276A1 (ja) | 2017-10-24 | 2017-10-24 | 電磁波検出モジュール、電磁波検出モジュール列、及び非破壊検査装置 |
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JP6454820B1 true JP6454820B1 (ja) | 2019-01-16 |
JPWO2019082276A1 JPWO2019082276A1 (ja) | 2019-11-21 |
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US (1) | US20200241150A1 (ja) |
EP (1) | EP3702745A4 (ja) |
JP (1) | JP6454820B1 (ja) |
CN (1) | CN111263882B (ja) |
WO (1) | WO2019082276A1 (ja) |
Cited By (1)
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EP4123296A4 (en) * | 2020-04-16 | 2024-04-10 | Hamamatsu Photonics K.K. | RADIOGRAPHY METHODS, TRAINED MODEL, RADIOGRAPHY MODULE, RADIOGRAPHY PROGRAM, RADIOGRAPHY SYSTEM AND MACHINE LEARNING METHODS |
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JP7579333B2 (ja) | 2020-04-16 | 2024-11-07 | 浜松ホトニクス株式会社 | 放射線画像取得装置、放射線画像取得システム、及び放射線画像取得方法 |
JP7626676B2 (ja) | 2021-07-05 | 2025-02-04 | 浜松ホトニクス株式会社 | 放射線画像取得装置、放射線画像取得システム、及び放射線画像取得方法 |
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- 2017-10-24 JP JP2018508774A patent/JP6454820B1/ja active Active
- 2017-10-24 CN CN201780096236.1A patent/CN111263882B/zh active Active
- 2017-10-24 WO PCT/JP2017/038376 patent/WO2019082276A1/ja unknown
- 2017-10-24 US US16/756,843 patent/US20200241150A1/en not_active Abandoned
- 2017-10-24 EP EP17929779.1A patent/EP3702745A4/en active Pending
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US4383327A (en) * | 1980-12-01 | 1983-05-10 | University Of Utah | Radiographic systems employing multi-linear arrays of electronic radiation detectors |
JPH08140962A (ja) * | 1994-11-24 | 1996-06-04 | Toshiba Corp | マルチスライスx線ct装置 |
JP2003215065A (ja) * | 2002-01-24 | 2003-07-30 | Shimadzu Corp | 放射線撮像装置 |
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JP2006071321A (ja) * | 2004-08-31 | 2006-03-16 | Rigaku Corp | X線検出装置及びx線分析装置 |
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Cited By (1)
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EP4123296A4 (en) * | 2020-04-16 | 2024-04-10 | Hamamatsu Photonics K.K. | RADIOGRAPHY METHODS, TRAINED MODEL, RADIOGRAPHY MODULE, RADIOGRAPHY PROGRAM, RADIOGRAPHY SYSTEM AND MACHINE LEARNING METHODS |
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CN111263882A (zh) | 2020-06-09 |
WO2019082276A1 (ja) | 2019-05-02 |
EP3702745A4 (en) | 2021-09-01 |
CN111263882B (zh) | 2023-07-14 |
JPWO2019082276A1 (ja) | 2019-11-21 |
US20200241150A1 (en) | 2020-07-30 |
EP3702745A1 (en) | 2020-09-02 |
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