JP6447148B2 - 投影露光装置 - Google Patents
投影露光装置 Download PDFInfo
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- JP6447148B2 JP6447148B2 JP2015003636A JP2015003636A JP6447148B2 JP 6447148 B2 JP6447148 B2 JP 6447148B2 JP 2015003636 A JP2015003636 A JP 2015003636A JP 2015003636 A JP2015003636 A JP 2015003636A JP 6447148 B2 JP6447148 B2 JP 6447148B2
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- Prior art keywords
- exposure
- microlens array
- scanning
- substrate
- shift
- Prior art date
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- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
露光光をマイクロレンズアレイを介して基板上に投影する投影露光装置であって、前記基板の一端から他端に向けた走査方向に沿って前記マイクロレンズアレイを移動させる走査露光部と、前記走査露光部による前記マイクロレンズアレイの移動中に、前記マイクロレンズアレイを前記走査方向と交差するシフト方向に移動させるマイクロレンズアレイシフト部とを備え、前記走査露光部が前記基板の一端から他端まで前記マイクロレンズアレイを移動させる間に前記マイクロレンズアレイシフト部が前記マイクロレンズアレイを移動させるシフト量は、前記走査露光部のみで前記マイクロレンズアレイを移動させた場合に生じる露光量低下領域の幅に応じて設定されることを特徴とする投影露光装置。
2U:レンズ単体,2S:六角視野絞り,
3:基板支持部,4:マスク支持部,
10:走査露光部,11:光源,12:走査ガイド,
20:マイクロレンズアレイシフト部,21:シフトガイド,
L:露光光,W:基板,M:マスク,Sc:走査方向,Sf:シフト方向,
Xa:有効露光幅,D:欠陥部,m:露光ムラ,px,py:ピッチ間隔
Claims (3)
- 露光光をマイクロレンズアレイを介して基板上に投影する投影露光装置であって、
前記基板の一端から他端に向けた走査方向に沿って前記マイクロレンズアレイを移動させる走査露光部と、
前記走査露光部による前記マイクロレンズアレイの移動中に、前記マイクロレンズアレイを前記走査方向と交差するシフト方向に移動させるマイクロレンズアレイシフト部とを備え、
前記走査露光部が前記基板の一端から他端まで前記マイクロレンズアレイを移動させる間に前記マイクロレンズアレイシフト部が前記マイクロレンズアレイを移動させるシフト量は、前記走査露光部のみで前記マイクロレンズアレイを移動させた場合に生じる露光量低下領域の幅に応じて設定されることを特徴とする投影露光装置。 - 前記走査方向に直交する露光位置全体の平均露光量に対して最大露光量と最小露光量との差が2%以下になるように、前記シフト量を設定することを特徴とする請求項1記載の投影露光装置。
- 露光光をマイクロレンズアレイを介して基板上に投影する投影露光方法であって、
前記基板の一端から他端に向けた走査方向に沿って前記マイクロレンズアレイを移動させながら走査露光を行う際に、前記マイクロレンズアレイを前記走査方向と交差する方向に移動させ、
前記基板の一端から他端まで前記マイクロレンズアレイを移動させる間に前記マイクロレンズアレイを前記走査方向と交差する方向に移動させるシフト量は、前記走査方向と交差する方向に移動させることなく前記基板の一端から他端まで前記マイクロレンズアレイを移動させた場合に生じる露光量低下領域の幅に応じて設定されることを特徴とする投影露光方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015003636A JP6447148B2 (ja) | 2015-01-09 | 2015-01-09 | 投影露光装置 |
PCT/JP2016/050221 WO2016111309A1 (ja) | 2015-01-09 | 2016-01-06 | 投影露光装置 |
KR1020177016801A KR20170102238A (ko) | 2015-01-09 | 2016-01-06 | 투영 노광 장치 |
US15/542,281 US20180003952A1 (en) | 2015-01-09 | 2016-01-06 | Projection exposure device |
CN201680005296.3A CN107111252B (zh) | 2015-01-09 | 2016-01-06 | 投影曝光装置 |
TW105100408A TW201635043A (zh) | 2015-01-09 | 2016-01-07 | 投影曝光裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015003636A JP6447148B2 (ja) | 2015-01-09 | 2015-01-09 | 投影露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016128892A JP2016128892A (ja) | 2016-07-14 |
JP6447148B2 true JP6447148B2 (ja) | 2019-01-09 |
Family
ID=56355995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015003636A Expired - Fee Related JP6447148B2 (ja) | 2015-01-09 | 2015-01-09 | 投影露光装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180003952A1 (ja) |
JP (1) | JP6447148B2 (ja) |
KR (1) | KR20170102238A (ja) |
CN (1) | CN107111252B (ja) |
TW (1) | TW201635043A (ja) |
WO (1) | WO2016111309A1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09244254A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
US7756660B2 (en) * | 2004-12-28 | 2010-07-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1843204A1 (en) * | 2005-01-25 | 2007-10-10 | Nikon Corporation | Exposure device, exposure method, and micro device manufacturing method |
JP5190860B2 (ja) * | 2007-01-22 | 2013-04-24 | 学校法人東京電機大学 | 投影露光装置および投影露光方法 |
WO2012136434A2 (en) * | 2011-04-08 | 2012-10-11 | Asml Netherlands B.V. | Lithographic apparatus, programmable patterning device and lithographic method |
JP6037199B2 (ja) * | 2011-06-02 | 2016-12-07 | 株式会社ブイ・テクノロジー | 露光装置及び露光方法 |
US9297642B2 (en) * | 2011-08-10 | 2016-03-29 | V Technology Co., Ltd. | Alignment device for exposure device, and alignment mark |
JP2014222746A (ja) * | 2013-05-14 | 2014-11-27 | 株式会社ブイ・テクノロジー | 露光装置及び露光方法 |
JP6283798B2 (ja) * | 2013-07-01 | 2018-02-28 | 株式会社ブイ・テクノロジー | 露光装置および照明ユニット |
JP6342842B2 (ja) * | 2015-04-30 | 2018-06-13 | オリンパス株式会社 | 走査型顕微鏡システム |
-
2015
- 2015-01-09 JP JP2015003636A patent/JP6447148B2/ja not_active Expired - Fee Related
-
2016
- 2016-01-06 US US15/542,281 patent/US20180003952A1/en not_active Abandoned
- 2016-01-06 KR KR1020177016801A patent/KR20170102238A/ko not_active Withdrawn
- 2016-01-06 CN CN201680005296.3A patent/CN107111252B/zh not_active Expired - Fee Related
- 2016-01-06 WO PCT/JP2016/050221 patent/WO2016111309A1/ja active Application Filing
- 2016-01-07 TW TW105100408A patent/TW201635043A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2016128892A (ja) | 2016-07-14 |
CN107111252A (zh) | 2017-08-29 |
US20180003952A1 (en) | 2018-01-04 |
KR20170102238A (ko) | 2017-09-08 |
WO2016111309A1 (ja) | 2016-07-14 |
CN107111252B (zh) | 2018-12-25 |
TW201635043A (zh) | 2016-10-01 |
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