JP6426935B2 - Method of manufacturing electronic device - Google Patents

Description

  The present invention relates to a method of manufacturing an electronic device and an electronic device.

  There is known an electronic device in which castellations (recesses in a plan view of a substrate) are formed on the outer peripheral surface of a substrate (wiring substrate) (for example, Patent Documents 1 and 2). A conductor (castration conductor) is formed on the inner surface of the castellation. The castellation conductor is used, for example, to connect the conductor patterns on the front and back of the substrate, or to an external terminal disposed on the back of the substrate, and is used to assist bonding of the bump (solder or the like) to the external terminal. ing.

  As a method of forming such castellation, there is known a method of providing a plurality of through holes on a line to be diced in a mother substrate on which a large number of substrates are taken (for example, Patent Document 2). In this method, when the mother substrate is diced and separated into a plurality of substrates, the through holes are divided accordingly, and castellation in an arc shape in plan view is obtained.

JP, 2011-199577, A Japanese Patent Application Publication No. 2007-234657

  The shape of castellation affects the characteristics or reliability of the electronic device. For example, when the angle of the corner where the side surface (for example, one side of a rectangular substrate) provided with castellation intersects the inner surface of the castellation in a plan view of the substrate is an acute angle, the solder from castellation It is not possible to wrap around the corner and make close contact with the side surface of the substrate. As a result, the bonding strength may be reduced.

  However, various problems will arise if it is going to solve the above subjects by making the shape of a through-hole into a suitable shape. For example, it becomes difficult to use some drilling means such as a drill. Further, for example, it is necessary to form the through holes in consideration of the relative relationship between the direction of the shape of the through holes and the direction of the substrate (conductor pattern), which may make the manufacturing design complicated.

  Therefore, it is desirable that a method of manufacturing an electronic device and a method of manufacturing a wiring substrate capable of easily forming castellations of a suitable shape, and an electronic device and wiring substrate having castellations of a suitable shape are provided.

  A method of manufacturing an electronic device according to an aspect of the present invention includes a through hole forming step of penetrating a mother substrate in a thickness direction and forming a plurality of through holes arranged in a predetermined direction along the main surface of the mother substrate; The mother substrate on which the plurality of through holes are formed is divided into a plurality of insulating substrates, and in this case, the mother substrate is separated along the arrangement of the plurality of through holes, and the plurality of divided through holes are separated. And separating the castellation on the outer peripheral surface of the plurality of insulating substrates, and the individualizing step includes one side of the arrangement from the center of the plurality of through holes. A first separation step of separating the mother substrate so as to connect the plurality of through holes at a misaligned position, and a position separated to the other side of the side of the array with respect to the centers of the plurality of through holes Dividing the mother board so as to connect the plurality of through holes. Or includes a second separation step of partially removing the.

  Preferably, in the first separation step, the mother substrate is separated into the insulating substrate positioned on the one side with respect to the separation surface and the discarding margin positioned on the other side, and in the second separation step, The mother substrate is separated into the insulating substrate positioned on the other side with respect to the separation surface and the discarding margin positioned on the one side.

  Preferably, in the first separation step and the second separation step, the mother substrate is cut by a dicing blade.

  In the electronic device according to one aspect of the present invention, an insulating substrate in which castellation is formed at a corner where the first side of the outer periphery or the first side and the second side of the outer periphery cross in plan view of the main surface In a plan view of the main surface of the insulating substrate, the distance between the virtual line extending the first side and the center of the virtual circle including the arc formed by the inner surface of the castellation is greater than 150 μm or More than half of the thickness of the insulating substrate.

  According to the above procedure, it is possible to easily form a castellation of a suitable shape, and according to the above-mentioned structure, the shape of the castellation is preferred.

BRIEF DESCRIPTION OF THE DRAWINGS The perspective view which shows the structure of the principal part of the electronic device which concerns on embodiment of this invention. FIG. 2 is a plan view showing the back surface of the electronic device of FIG. 1; 3 (a) to 3 (c) are schematic diagrams for explaining the main part of the method of manufacturing the electronic device of FIG. The elements on larger scale of FIG.3 (c).

  FIG. 1 is a perspective view showing the configuration of the main part of a crystal oscillator 1 as an electronic device according to an embodiment of the present invention. In the following, the crystal oscillator 1 may be described with reference to the orthogonal coordinate system xyz defined for the crystal oscillator 1 for convenience.

  The crystal oscillator 1 is, for example, roughly configured in a chip shape. The dimensions may be set appropriately, but as an example, the long side length (x direction) is 1.5 mm to 7 mm, the short side length (y direction) is 1 mm to 5 mm, and the thickness (z direction) ) Is 0.5 mm to 2 mm.

  The crystal oscillator 1 is configured as an electronic component mounted on a mounting substrate such as a circuit board. For example, the crystal oscillator 1 is bonded to the mounting substrate by bumps (not shown) disposed between the crystal oscillator 1 and the mounting substrate, with the surface on the negative side in the z direction facing the mounting substrate (not shown). It is fixed to the mounting substrate and electrically connected. The bumps are made of, for example, solder or a conductive adhesive.

  The crystal oscillator 1 includes, for example, a device substrate 3 and a vibrator unit 5 and an IC 7 provided on the device substrate 3. In addition to this, the crystal oscillator 1 may have appropriate electronic elements and / or members. For example, the crystal oscillator 1 may have a resin portion that covers the IC 7 and the vibrator portion 5.

  The vibrator unit 5 includes, for example, a not-shown vibrating element mounted on the device substrate 3 and a cover 9 for sealing the vibrating element. Although not particularly shown, the vibrating element has, for example, a plate-like crystal piece and a pair of excitation electrodes provided on both main surfaces of the crystal piece.

  The IC 7 is mounted on, for example, the device substrate 3 via bumps (not shown), and is electrically connected to the vibration element via the device substrate 3. In addition, the IC 7 includes, for example, an oscillation circuit or the like that applies a voltage to the vibration element to generate an oscillation signal of a predetermined frequency.

  FIG. 2 is a plan view showing the negative side of the crystal oscillator 1 in the z direction.

  As shown in FIGS. 1 and 2, the device substrate 3 has an insulating substrate 11 and various conductors provided on the insulating substrate 11.

  The insulating substrate 11 is, for example, a substantially rectangular plate, and is opposed to a first main surface 11a (FIG. 1) on which the vibrator portion 5 and the IC 7 are mounted and a back surface thereof (not shown). A second major surface 11b and an outer peripheral surface 11c located on the periphery of the major surfaces are provided. The thickness of the insulating substrate 11 corresponds to the thickness of the device substrate 3 and is, for example, 100 to 300 μm.

  The castellation 11d is formed at an appropriate position on the outer peripheral surface 11c. For example, the castellation 11 d is located at the rectangular corner (four corners) of the device substrate 3. The castellation 11d is a recess (notched portion) in plan view, and is formed, for example, from the first major surface 11a to the second major surface 11b. The shape of the castellation 11d in plan view is, for example, constant (identical) from the first major surface 11a to the second major surface 11b. Also, the shapes of the four castellations 11d are, for example, identical to one another.

  As shown in FIG. 2, in plan view, the inner surface of the castellation 11 d is formed to be, for example, an arc that is a part of the imaginary circle C1. The virtual circle C1 is a circle (a true circle, and the same applies hereinafter), and is not an ellipse or an oval.

  One of the features of this embodiment is that the radius r1 of the imaginary circle C1 is relatively large (the castellation 11d is smaller than the radius r1) as compared with the size (for example, the length of the arc) of the castellation 11d. And Here, for example, the radius r1 of the virtual circle C1 is 350 to 650 μm.

  In another aspect, in the present embodiment, the distance s1 between the virtual line Ln extending one side of the rectangle of the device substrate 3 and the center O1 of the virtual circle C1 including the arc of the castellation 11d notching the one side is One of the characteristics is that it is relatively large. For example, the distance s1 is longer than 150 μm. Also, for example, the distance s1 is longer than half the thickness of the device substrate 3. The distance s1 is, for example, 150 to 280 μm.

  In another aspect, the embodiment is characterized in that the central angle θ1 of the castellation 11d with respect to the arc is relatively small.

  Further, in another aspect, in the present embodiment, the crossing angle θ2 formed by one side of the rectangle of the device substrate 3 and the tangent of the arc of the castellation 11d that cuts the one side is relatively large or an obtuse angle Is one of the features.

  The material of the insulating substrate 11 may be any suitable one as long as it has insulating properties, and the insulating substrate 11 may be made of a single material or may be made of a plurality of materials. Good. For example, the insulating substrate 11 is made of ceramic or resin, or made of a substrate made of paper or fibers impregnated with the resin. The insulating substrate 11 is preferably a glass epoxy substrate in which glass fiber is impregnated with a resin.

  Various conductors provided on the insulating substrate 11 include, for example, a plurality of external terminals 13 (FIG. 2) provided on the second major surface 11 b, and castellation conductors 15 (FIG. 1) provided on the castellation 11 d. And a conductor pattern 17 (FIG. 1) provided on the first major surface 11a.

  The external terminal 13 is for mounting the crystal oscillator 1 on a mounting base (not shown). The external terminals 13 are made of, for example, a layered conductor superimposed on the second major surface 11b, and are disposed at the four corners of the rectangle of the second major surface 11b. The planar shape of the external terminal 13 may be set as appropriate, and is, for example, a roughly rectangular shape, and a portion thereof is cut away by the castellation 11 d. The external terminal 13 is joined to a pad of a mounting base (not shown) by, for example, a bump made of solder or the like.

  The castellation conductor 15 is for electrically connecting the external terminal 13 and the conductor pattern 17, for example. Also, for example, the castellation conductor 15 has a bump joined with the external terminal 13 and contributes to mounting of the crystal oscillator 1 on a mounting base (not shown). The castellation conductor 15 is, for example, a layered conductor superimposed on the inner surface of the castellation 11d, and provided over the entire inner surface of the castellation 11d.

  The conductor pattern 17 is, for example, for connecting the castellation conductor 15 and the IC 7. The conductor pattern 17 is formed of, for example, a layered conductor superimposed on the second major surface 11b, and a wire 17a extending from the castellation conductor 15 and a tip of the wire 17a are not shown pads joined with the IC 7 by bumps. And. Also, for example, the conductor pattern 17 is not shown because it is hidden by the IC 7 or the like, but is located at a pad joined to the IC 7 by a bump, a wire extending from the pad to the vibrator portion 5, and a tip of the wire It has a vibration element (not shown) and a pad joined by a bump.

  The materials of the external terminal 13, the castellated conductor 15 and the conductor pattern 17 may be any suitable conductive material (generally metal). In addition, these conductors may be configured by stacking a plurality of conductor layers. For example, these conductors are made of Cu, Al, Ti, Ag, Au, Ni, Cr or alloys thereof, or laminates of any of these.

  FIGS. 3A to 3C are schematic views for explaining the method of manufacturing the crystal oscillator 1.

  First, as shown in FIG. 3A, a mother substrate 21 (wafer-like base material) from which a large number of insulating substrates 11 are taken is prepared. The mother substrate 21 has, for example, a thickness of 100 to 300 μm.

  Next, as shown in FIG. 3B, which is a plan view of a part of the mother substrate 21, a plurality of through holes 21h are formed to penetrate the mother substrate 21 in the thickness direction (z direction). The through hole 21 h is for forming the castellation 11 d, and the shape and size thereof are the same as the shape and size of the virtual circle C1 shown in FIG. 2. The diameter of the through hole 21 h is, for example, 700 to 1300 μm. The plurality of through holes 21 h are arranged vertically and horizontally. That is, the plurality of through holes 21 h are arranged along a straight line extending in the x direction, and are arranged along a straight line extending in the y direction. The formation of the plurality of through holes 21 h may be performed by a known appropriate method, for example, using a drill.

  Next, as shown in FIG. 3C, the mother substrate 21 is separated (for example, cut) along the arrangement in the x direction and the arrangement in the y direction of the through holes 21h, thereby separating the mother substrate 21 into a plurality of insulating substrates. Individualize into 11

  More specifically, when the mother substrate 21 is separated along one arrangement of the through holes 21 h in the y direction, first, the side of the arrangement relative to the center O 1 of the plurality of through holes 21 h included in this arrangement is The mother substrate 21 is separated (along the first straight line L1) so as to connect the plurality of through holes 21h included in this arrangement at a position shifted to one side (the positive side in the x direction) of. Next, the plurality of through holes 21h included in the array are shifted from the center O1 of the plurality of through holes 21h included in the array to the other side (negative side in the x direction) of the side of the array. The mother substrate 21 is separated so as to be connected (along the second straight line L2). Although the arrangement in the y direction has been described, separation along the first straight line L1 and separation along the second straight line L2 are similarly performed for the arrangement in the x direction.

  Therefore, the mother substrate 21 is separated into the plurality of insulating substrates 11 and the disposal allowance 23 located therebetween. Further, along with this separation, the through holes 21 h are divided, and form castellations 11 d in an arc shape in plan view. The castellation 11d becomes smaller and the distance s1 (FIG. 2) between one side of the insulating substrate 11 and the center O1 becomes larger, as compared with the case where the through hole 21h is separated along the straight line passing through the center O1. The central angle θ1 (FIG. 2) of the arc 11d with respect to the arc decreases and the crossing angle θ2 increases.

  The order of separation may be set as appropriate. For example, after separation along the first straight line L1 and the second straight line L2 with respect to the arrangement of the through holes 21h in the y direction, the first straight line L1 and the second straight line with respect to the next one arrangement in the y direction After cutting along the straight line L2 may be performed, or after separation along the first straight line L1 is performed on the plurality of y-direction arrangements, separation along the second straight line L2 may be performed on the plurality of y-direction arrangements. You may go.

  The separation is performed, for example, by full cutting using a dicing blade 25. In addition, cutting using a laser may be performed, or separation by half cutting using a dicing blade may be performed. When a dicing blade or a laser is used, the mother substrate 21 is removed (for example, cut with a dicing blade) with a fixed width.

  FIG. 4 is a diagram showing a part of FIG. 3 (c) in an enlarged manner. As described above, when the mother substrate 21 is cut by the dicing blade 25, a cutting allowance 27 (an area shown by hatching in the drawing) having a width w 1 substantially equal to the blade thickness of the dicing blade 25 is generated. As understood from the above description, the width w1 of the cutting allowance 27 is smaller than the diameter (r1 × 2) of the through hole 21h, and in the present embodiment, smaller than the radius r1 of the through hole 21h.

  The external terminal 13, the conductor pattern 17, the IC 7 and the vibrator portion 5 may be provided at an appropriate time. For example, the external terminal 13, the conductor pattern 17, the IC 7 and the vibrator portion 5 may be provided on the mother substrate 21 in the state of FIG. 3A before forming the through hole 21 h, or the through hole 21 h is formed. Or after the mother substrate 21 is singulated. Also, they may be provided at different times.

  Similarly, the castellation conductor 15 may be provided at an appropriate time as long as the through hole 21 h is formed. For example, the castellation conductor 15 may be provided after forming the through holes 21 h and before singulating the base substrate 21 or may be provided after singulating the base substrate 21.

  The formation method of the external terminal 13, the castellation conductor 15 and the conductor pattern 17 may be the same as the known method, and the mounting method of the IC 7 and the vibrator part 5 may be the same as the known method.

  As described above, in the method of manufacturing the crystal oscillator 1 according to this embodiment, the plurality of penetrations penetrating the mother substrate 21 in the thickness direction and arranged in the predetermined direction (x direction or y direction) along the main surface of the mother substrate 21 A through hole forming step (FIG. 3B) for forming the holes 21 h and the mother substrate 21 on which the plurality of through holes 21 h are formed are separated into a plurality of insulating substrates 11. The individualization step (FIGS. 3C and 4) of separating the mother substrate 21 along the array and forming castellations 11d on the outer peripheral surface of the plurality of insulating substrates 11 by the plurality of divided through holes 21h. ,have. The singulation step is performed at a position shifted to one side (for example, the positive side in the x direction) of the side of the arrangement with respect to the center O1 of the plurality of through holes 21 h (for example, in the one arrangement in the y direction) Separating the mother substrate 21 along the first straight line L1 so as to connect the through holes 21h, and the other side of the array with respect to the center O1 of the plurality of through holes 21h (for example, the x direction And a second separation step of separating the mother substrate 21 along the second straight line L2 so as to connect the plurality of through holes 21h at a position shifted to the negative side of

  Therefore, for example, as described with reference to FIG. 3C and FIG. 4, in the method of manufacturing the crystal oscillator 1 of the present embodiment, the angle at which the side surface provided with castellation and the inner surface of castellation intersect. The angle of the portion is not an acute angle as in the case of separating the mother substrate 21 along the straight line connecting the centers O1 of the through holes 21h of each row as in the prior art, but an obtuse angle. That is, in the method of manufacturing the crystal oscillator 1 according to the present embodiment, the crossing angle θ2 formed by one side of the insulating substrate 11 and the tangent of the arc of the castellation 11d not having the one side can be increased. That is, the shape of the castellation 11d can be substantially changed while forming the circular through hole 21h as in the conventional case.

  If the crossing angle θ2 can be increased, for example, a bump such as a solder can easily come in close contact with the one side of the intersection of the arc of the castellation 11d and the one side of the insulating substrate 11. As a result, the bonding strength of the bumps to the crystal oscillator 1 is improved. Further, for example, when the mother substrate 21 is cut by the dicing blade 25, generation of burrs when the dicing blade 25 reaches the through holes 21 h is suppressed.

  As in the conventional case, even when mother substrate 21 is cut along a straight line connecting centers O1 of through holes 21h, mother substrate 21 is cut with a dicing blade having a blade thickness corresponding to width w2 of FIG. For example, the castellation 11d having the same shape and size as those of the present embodiment can be formed, and the shape of the castellation 11d can be substantially changed while forming the circular through hole 21h as in the conventional case. .

  However, in general, it is considered preferable to reduce the cutting allowance in view of material saving, and the thickness of the dicing blade is also reduced. Generally, the blade thickness of the dicing blade is 100 μm or less, and the thick one is about 300 μm. Therefore, conventionally, it can be considered that there is no electronic device having a castellation 11d in which the distance s1 (half the width w2) exceeds 150 μm (300 μm / 2).

  Further, the blade thickness of the dicing blade is, for example, equal to or less than the thickness of the mother substrate 21 so that the mother substrate 21 is not broken at the time of dicing. Therefore, conventionally, it can be considered that there is no electronic device having the castellation 11d in which the distance s1 exceeds half of the thickness of the insulating substrate 11 (mother substrate 21).

  Therefore, the crystal oscillator 1 manufactured by the manufacturing method of the present embodiment, which is particularly characteristic is a caster at the corner where the first side and the second side of the outer periphery cross in plan view of the main surface Of the imaginary circle C1 including the arc formed by the inner surface of the castellation 11d and the imaginary line Ln having the insulating substrate 11 with the formation 11d formed thereon and the first side being extended in plan view of the main surface of the insulation substrate 11 The distance s1 to the center O1 is larger than 150 μm or larger than half the thickness of the insulating substrate 11. Here, the distance s1 is, for example, 150 to 280 m. By doing so, it becomes possible to substantially change the shape of the castellation 11d while forming the circular through hole 21h as in the prior art.

  Further, in the method of manufacturing the crystal oscillator 1 according to the present embodiment, in the first separation step (for example, cutting along the first straight line L1), one side (for example, the x direction) of the mother substrate 21 with respect to the separation surface (cutting surface) In the second side (for example, cutting along the second straight line L2), the mother substrate is separated into the insulating substrate 11 located on the positive side of the substrate and the disposal margin 23 located on the other side (for example, the negative side in the x direction). 21 is separated into an insulating substrate 11 positioned on the other side with respect to the separation surface and the discarding margin 23 positioned on one side.

  Therefore, without changing the blade thickness of the dicing blade 25 (width w1 of the cutting allowance 27), the width of the disposal allowance 23 can be appropriately changed to set the shape of the castellation 11d. As a modified example of the manufacturing method of the present embodiment, for example, the mother substrate 21 is formed so that the disposal margin 23 is not generated, for example, using the dicing blade 25 whose blade thickness is smaller than the width w2 and half or more of w2. A method of singulating the insulating substrate 11 is conceivable. In the present embodiment, which generates the disposal margin 23, the blade thickness of the dicing blade 25 can be made thinner than in such a modification, and the surface (the outer peripheral surface of the disk) of the dicing blade 25 to cut the mother substrate 21 In the above, there is no problem that only a part in the width direction (axial direction) is used for cutting the mother substrate 21 to wear.

  As understood from the description of the modification described above, the second separation step along the second straight line L2 performed after the first separation step performed along the first straight line L1 is the second straight line L2 Instead of separating the mother substrate 21 into the insulating substrate 11 and the disposal margin 23 along the same, the cut surface of the mother substrate 21 in the first separation step may be scraped (partially removed).

  The present invention is not limited to the embodiments and modifications described above, and may be implemented in various aspects.

  For example, the electronic device is not limited to a piezoelectric device such as a crystal oscillator, and may be, for example, a resistive element, an inductor, a capacitor or a semiconductor device (for example, an IC or an LED). Also, the piezoelectric device is not limited to the oscillator, and may be, for example, a piezoelectric vibrator or a surface acoustic wave (SAW) device. The piezoelectric body of the piezoelectric vibrator or the piezoelectric oscillator is not limited to quartz, and may be, for example, ceramic. Also, the structure of the piezoelectric oscillator is limited to one in which the vibration element and the IC are mounted on one main surface of a single layer substrate (a substrate having a conductor layer formed only on both surfaces of the substrate) as illustrated in FIG. Alternatively, the vibration element may be mounted on one main surface of the substrate and the IC may be mounted on the other main surface. In addition, the electronic device may have a constant temperature bath accommodating the insulating substrate (device substrate).

  As described above, as in the case where the electronic device may be various devices, the insulating substrate on which the castellation is formed may be appropriate other than those exemplified in the description of the embodiment. For example, in a semiconductor device, the insulating substrate may be a semiconductor substrate made of silicon. In the SAW device, the insulating substrate may be a piezoelectric substrate made of single crystal.

  The shape of the through hole that is castellated may not be circular. For example, the shape of the through hole may be elliptical or rectangular. Regardless of the shape, the degree of freedom of the shape and / or size of the through hole is improved by performing two separation steps for each through hole.

  The castellation may be provided in the middle of the side surface (side in plan view) instead of the four corners (corner portions) of the insulating substrate. For example, in the insulating substrate 11 of FIG. 1, two castellations may be provided in the middle (on the center side of the side with respect to the corner) of each long side (side extending in the x direction). In this case, the separation step is performed so as to connect the plurality of through holes arranged in the x direction, but the separation along the straight line extending in the y direction is performed so as to avoid the plurality of through holes. That is, one through hole does not constitute four castellations as in the embodiment, but constitutes two castellations.

  As described above, even in the case where the castellation is provided in the middle of the side, the plurality of through holes are connected twice so as to connect the plurality of through holes at the positions shifted to one side and the other side of the arrangement By performing the separation step, the crossing angle between the rectangular side of the insulating substrate 11 and the arc of the castellation is increased as compared with the conventional substantially semicircular castellation, or the rectangular side of the insulating substrate 11 is The distance between the extended virtual line and the center of the virtual circle including the castellation arc can be increased.

  The number of castellations provided on one insulating substrate 11 is not limited to four, and may be, for example, one or two, or five or more. Further, in the case where a plurality of castellations are provided on one insulating substrate 11, the shapes and / or sizes of the plurality of castellations may be identical to each other or may be different from each other.

  The plurality of insulating substrates extracted from the mother substrate may have different configurations, or may have the same configuration and be arranged in different directions. In another aspect, the plurality of through holes may be arranged parallel to one of the x direction and the y direction, but not parallel to the other of the x direction and the y direction. For example, in the case where a plurality of rows of through holes arranged in the x direction are provided with different positions in the y direction, the positions of the plurality of through holes in the x direction are mutually different. It may be different. Even in this case, when the mother substrate is separated so as to connect the plurality of through holes arranged in the x direction, the present invention can be applied in which two separation steps are performed.

  It can be understood from the explanation that castellation may be provided at the middle of the side of the insulating substrate and the explanation that plural through holes may be arranged only in one of the x direction and y direction described above. The separation step of separating the mother substrate so as to connect the plurality of through holes may be performed in only one of the x direction and the y direction, and may be performed on the other side while avoiding the plurality of through holes. In addition, when the mother substrate is separated so as to connect a plurality of through holes in both the x direction and the y direction, it is performed twice at a position shifted with respect to the center of the through hole in only one of the x direction and the y direction. In the other of the x direction and the y direction, one separation step may be performed at a position passing through the center of the through hole.

  A description that the configurations of the plurality of insulating substrates taken out from the mother substrate may be different from each other, and a description that the shapes and / or sizes of the plurality of castellations provided on one insulating substrate may be different from each other As understood from the above, the size and / or shape of the plurality of through holes may be different from each other.

  In the electronic device, when a plurality of laminated insulating substrates are provided, a part thereof may be regarded as the insulating substrate of the present invention, or the whole may be regarded as the insulating substrate of the present invention. For example, a range in which castellations are integrally formed among a plurality of insulating substrates may be regarded as the insulating substrate of the present invention. Also, for example, when it is determined whether or not the electronic device falls under a preferable aspect of the present invention based on whether or not the distance s1 is larger than half of the thickness of the insulating substrate, the through holes are connected. It may be determined that the range in which separation (cutting) is performed together corresponds to the insulating substrate of the present invention.

  In the embodiment, the castellation conductor 15 has both the function of connecting the external terminal 13 and the conductor pattern 17 and the function of strengthening the bonding of the bumps. However, the castellation conductor may be provided to perform only one of the above two effects. For example, the conductor pattern and the external terminal may be connected by a through conductor penetrating the insulating substrate, and the castellation conductor may not be connected to the conductor pattern. Also, for example, the bumps may be arranged not to contact the castellation conductors.

  DESCRIPTION OF SYMBOLS 1 ... crystal oscillator (electronic device), 11 ... insulating substrate, 11 d ... castellation, 21 ... mother substrate, 21 h ... through hole, O 1 ... center.

Claims (3)

A through hole forming step of penetrating the mother substrate in the thickness direction and forming a plurality of through holes arranged in a predetermined direction along the main surface of the mother substrate;
The mother substrate on which the plurality of through holes are formed is divided into a plurality of insulating substrates, and in this case, the mother substrate is separated along the arrangement of the plurality of through holes, and the plurality of divided through holes are separated. Singulating step of forming castellation on the outer peripheral surface of the plurality of insulating substrates by
Have
Said individualization step is
A first separation step of separating the mother substrate so as to connect the plurality of through holes at a position shifted to one side of the side of the array with respect to the centers of the plurality of through holes;
A second separation step of separating or partially removing the mother substrate so as to connect the plurality of through holes at a position shifted to the other side of the side of the array with respect to the centers of the plurality of through holes; A method of manufacturing an electronic device. In the first separation step, the mother substrate is separated into the insulating substrate positioned on the one side with respect to the separation surface and the discarding margin positioned on the other side,
The method of manufacturing an electronic device according to claim 1, wherein in the second separation step, the mother substrate is separated into an insulating substrate positioned on the other side with respect to the separation surface and the discarding margin positioned on the one side. . The method of manufacturing an electronic device according to claim 1, wherein in the first separation step and the second separation step, the mother substrate is cut by a dicing blade.

Images