JP6402935B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device.

  2. Description of the Related Art A semiconductor device such as an LED (Light Emitting Diode) in which a semiconductor element such as a light emitting element or a protective element is mounted on a package having leads is known. The semiconductor element is electrically joined to the lead of the package through, for example, a wire.

  Various shapes of packages are known depending on the purpose and application. For example, a package in which a recess is provided in a lead is known. Patent Document 1 discloses a semiconductor device in which a semiconductor element is placed on the bottom surface of a concave portion of a lead, and a lead around the upper portion of the concave portion and a light emitting element are connected by a wire. Since the wire connected to the upper part of the recess of the lead is not covered with the sealing member, it is further covered with another resin.

WO2012 / 090576

  The sealing member in the recess is desired to be stably formed in the recess, and the embodiment of the present invention provides a semiconductor device in which the sealing member is easily formed in the recess. For the purpose.

Embodiments of the present invention include the following configurations.
Connecting a semiconductor element, a recess having a bottom surface on which the semiconductor element is placed, a side wall, a package having a wire connection portion located outside the inner surface of the recess, and the wire connection portion and the semiconductor element A wire having a plurality of bent portions, a sealing member provided in the recess, and a translucent member that covers the sealing member, the upper surface of the package, and the wire. A first bent portion at a position extending upward from the first portion, a second bent portion extending from the first bent portion and positioned higher than the first bent portion and positioned outside the upper end of the inner side surface of the side wall; A third bent portion extending from the second bent portion to above the bottom surface of the concave portion and positioned at the same height or higher as the second bent portion.

  As described above, a semiconductor device in which a sealing member is easily formed stably in the recess can be obtained.

1A is a schematic perspective view illustrating a semiconductor device according to Embodiment 1. FIG. FIG. 1B is a schematic perspective view illustrating the semiconductor device according to the first embodiment. FIG. 1C is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. FIG. 1D is a partially enlarged view of FIG. 1C. FIG. 2 is a partially enlarged view showing another example of the semiconductor device according to the first embodiment. FIG. 3 is a partially enlarged view showing another example of the semiconductor device according to the first embodiment. FIG. 4A is a schematic perspective view illustrating the semiconductor device according to the second embodiment. FIG. 4B is a partially enlarged view of FIG. 4A. FIG. 5 is a partially enlarged view showing another example of the semiconductor device according to the second embodiment. FIG. 6 is a partially enlarged view showing another example of the semiconductor device according to the second embodiment.

  A mode for carrying out the present invention will be described below with reference to the drawings. However, the modes shown below exemplify a semiconductor device for embodying the technical idea of the present invention, and the present invention does not limit the semiconductor device to the following.

  Further, the present specification by no means specifies the member shown in the claims as the member of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present disclosure only to the extent that there is no specific description, It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

  The embodiment includes a semiconductor element, a package, a wire, a sealing member, and a translucent member. Specifically, a package including a semiconductor element, a recess having a bottom surface and a side wall on which the semiconductor element is placed, and a conductive member including a wire connection portion positioned outside the upper end of the inner side surface of the side wall of the recess; And a conductive member of the package and a semiconductor element, and a wire having a plurality of bent portions and a sealing member provided in the recess. Then, the bent portion of the wire has a first bent portion at a position extending upward from the wire connecting portion and a position extending from the first bent portion and higher than the first bent portion, than the upper end of the inner side surface of the side wall. A second bent portion located on the outer side, and a third bent portion extending from the second bent portion to above the bottom surface of the recess and positioned at the same height or higher as the second bent portion.

  The wire connects the semiconductor element placed in the recess and the wire connection portion located outside the inner surface of the side wall of the recess. That is, the wire is provided so as to extend from the inside of the recess to the outside of the recess. In the embodiment, the wire includes three bent portions, and by setting each of them to a specific position, the sealing member provided in the concave portion can make it difficult to scoop up the wire and reach the outside of the concave portion. . That is, the sealing member can be provided at an appropriate position.

  The wire connection portion may be located on the upper surface of the side wall of the recess, or may be located outside the outer surface of the side wall of the recess.

  A 1st bending part points out the part by which the wire connected to the wire connection part located outside the inner surface of the recessed part of a package was bent in the position extended upwards from there. That is, the wire connection portion is located outside the recess, and the first bent portion located above the wire connection portion is also located outside the recess. Specifically, the first bent portion is formed above the upper surface of the side wall of the concave portion of the package or above the outer surface of the side wall of the concave portion of the package.

  The second bent portion refers to a portion where the wire extended from the first bent portion is further bent. Specifically, whether the wire is closer to the recess than the first bent portion and is the same as the first bent portion. It is a portion bent at a higher position. That is, in the vertical direction, the second bent portion is at the same or higher position than the first bent portion, and in the horizontal direction, the second bent portion is on the inner side of the first bent portion, that is, on the side closer to the center of the recess. Is formed. The second bent portion can be disposed above the upper surface of the side wall of the recess of the package or outside the outer surface of the side wall of the recess.

  The third bent portion is a portion that is further extended from the second bent portion and bent above the bottom surface of the concave portion of the package. Further, it is a portion bent at the same height as the second bent portion or at a position higher than the second bent portion.

  The second bent portion of the wire is disposed above the upper surface of the side wall of the concave portion of the package, and the third bent portion is positioned above the bottom surface of the concave portion of the package and higher than the second bent portion. The distance (clearance) between the wire between the portion and the third bent portion and the upper surface of the package can be increased.

  By defining the positions of the three bent portions of the wire as described above, it is possible to suppress the sealing member provided in the concave portion from reaching the outside of the concave portion along the wire, and to stabilize the sealing member. Can be formed.

(Embodiment 1)
1A, 1B, 1C, and 1D are schematic views illustrating the semiconductor device according to the first embodiment. 1A is a perspective view, FIG. 1B is a perspective view in which a light-transmissive member of the semiconductor device in FIG. 1A is omitted, and FIG. 1C is a cross-sectional view of the semiconductor device in FIG. 1A (cross-sectional view in a line passing through the center of a recess). FIG. 1D is a partially enlarged view of FIG. 1C.

  The semiconductor device 10 includes a semiconductor element 120, a package 110, a wire 130, a sealing member 140, and a translucent member 150.

  The package 110 includes a substrate (molded resin) 112 and a conductive member (lead) 114, and includes a recess 116 on which the semiconductor element 120 can be placed. The package 110 includes an upper surface 116b having an inner peripheral end at the upper end of the inner side surface 116c of the side wall 116a of the recess. A part of the upper surface of the lead 114 is disposed on the upper surface 116b of the side wall, and a part of the lead becomes a wire connecting portion 114a to which a wire can be connected. On the upper surface 116b of the side wall of the recess, the lead 114 is disposed over the entire area on the inner peripheral side. A wire connection portion 114a for connecting a wire can be arranged in any of the regions.

  The semiconductor element 120 and the wire connection portion 114a are connected by a wire 130 so as to be energized. The wire 130 has a plurality of bent portions. Specifically, a first bent portion A1 located at a position extending upward from the wire connecting portion 114a and a second bent portion A2 extending from the first bent portion A1 and located at a position higher than the first bent portion A1. Prepare. The second bent portion A2 is located above the upper surface 116b of the side wall of the recess. Furthermore, a third bent portion A3 that extends from the second bent portion A2 to above the bottom surface 116d of the concave portion of the package and is higher (above) than the second bent portion A2.

  Thus, the second bent portion A2 of the wire 130 is located above the upper surface 116b of the side wall of the concave portion 116 of the package 110, and the third bent portion at a higher position is on the bottom surface 116d of the concave portion 116 of the package 110. By being positioned above, it is possible to make it difficult for the sealing member 140 filled in the concave portion 116 to reach the wire connecting portion 114 a through the wire 130.

  For example, the second bent portion is preferably located at a position 0.02 mm to 0.1 mm higher than the first bent portion. From another viewpoint, it is preferable that the angle of the wire between the first bent portion and the second bent portion is in a range that is inclined by about 30 to 80 degrees with respect to the horizontal direction. Moreover, when making a 3rd bending part higher than a 2nd bending part, it is preferable to make it a position higher about 0.02 mm-0.2 mm than a 2nd bending part, for example. Moreover, it is preferable that the angle of the wire between a 3rd bending part and the connection part of a semiconductor element is 60 degree | times or more with respect to a horizontal direction. In addition, said angle is an angle when it is assumed that the wire between a bending part is a straight line, and includes the case where it is substantially a straight line. Further, the bent portion refers to a portion bent at an angle of 4 degrees or more. For example, a portion having an angle difference of about 0.1 degrees is not included in the bent portion in the present application.

  The conductive member (lead) includes a portion exposed on the outer surface of the package as an external terminal for connection to an external electrode. By devising the shape of the wire, the sealing member in the recess is prevented from flowing out of the recess, so that the sealing member can also be prevented from reaching the lead serving as the external terminal. it can. Thereby, for example, when using a method of sucking an external terminal with a suction nozzle as a method for transporting a semiconductor element in a process, if the external terminal is covered by leakage of a sealing member, suction failure is likely to occur. Can be made difficult to cause.

  FIG. 2 shows another example of the first embodiment, and the third bent portion B3 of the wire 130 is at the same height as the second bent portion B2. As described above, the second bent portion B2 and the third bent portion B3 have the same height, and the second bent portion B2 is provided at a position away from the inner peripheral end of the upper surface 116b of the side wall of the recess. In this case, it is preferable that the distance h from the wire 130 is 0.15 mm or more at the inner peripheral end.

  FIG. 3 shows another example of the first embodiment, in which the second bent portion C2 of the wire 130 is located immediately above the inner peripheral end of the upper surface 116b of the side wall of the recess. This can prevent the resin from flowing out of the recess, which is preferable.

(Embodiment 2)
4A and 4B are schematic views illustrating the semiconductor device according to the second embodiment. 4 is a cross-sectional view, and FIG. 4B is a partially enlarged view of FIG. 4A.

  The semiconductor device 20 includes a semiconductor element 220, a package 210, a wire 230, and a sealing member 240. Furthermore, a translucent member 250 is provided so as to cover the sealing member 240.

  The package 210 includes a substrate 212 and a conductive member (wiring) 214, and a frame 215 is disposed on the substrate 212. A recess 216 is formed between the frame body 215 and the upper surface of the substrate 212, and the frame body 215 serves as a sidewall of the recess. The semiconductor element 220 is placed in the recess 216, and the sealing member 240 is also provided in the recess 216.

  The wiring 214 of the package 210 is provided on the upper surface of the substrate 212 outside (outside of the outer surface) of the side wall 216a (frame body 215) of the recess, and a wire connecting portion 214a to which a wire is connected is disposed in this region. Has been.

  The second embodiment is different from the first embodiment in that the wire 230 is connected to the inside of the recess and the outside of the recess so as to straddle the side wall 216a (frame body 215) of the recess 216. Other configurations are the same as those in the first embodiment unless otherwise described, and the materials listed in the first embodiment can be applied to the materials used.

  When a flat substrate is used, the wire connecting portion 214a and the semiconductor element 220 can be positioned on substantially the same plane. That is, the 1st bending part D1 provided in the position extended upwards from the wire connection part 214a can be provided in the position lower than the height of the side wall of a recessed part. The second bent portion D2 and the third bent portion D3 are at a higher position than the first bent portion D1, but if the first bent portion D1 can be lowered, the second bent portion D2 and the third bent portion accordingly. The part D3 can also be in a low position. Even in such a case, setting the three bending points of the wire to a specific relationship can make it difficult for the sealing member in the recess to creep up.

  The first bent portion D2 is not only lower than the height of the side wall 216a of the recess, but may be the same height or a position higher than that. In order to make it difficult to scoop up the sealing member in the recess, it is preferable to make it higher than the height of the side wall.

  The second bent portion D2 extends from the first bent portion D1 and is positioned higher than the first bent portion D1 and outside the upper end of the inner side surface 216c of the side wall 216a (frame body 215). For example, you may arrange | position outside the outer side surface 216e of a side wall, and may arrange | position above the upper surface 216b of a side wall. Further, the height may be a position higher than the first bent portion D1, and may be, for example, a position lower than the upper surface 216b of the side wall, the same height, or a higher position.

  The third bent portion D3 extends from the second bent portion D2 onto the bottom surface 216d of the recess, and is disposed at the same height as the second bent portion D2 or higher.

  FIG. 5 shows another example, in which the second bent portion E2 of the wire 230 is disposed immediately above the outer peripheral edge of the upper surface 216b of the side wall 216a (frame body 215) of the recess. And the 3rd bending part E3 is arrange | positioned in the position higher than the 2nd bending part E2.

  FIG. 6 shows still another example, in which the second bent portion F2 of the wire 230 is disposed immediately above the outer peripheral end of the upper surface 216b of the side wall 216a (frame body 215) of the recess. F3 is disposed at the same height as the second bent portion F2.

  Hereinafter, each member according to each embodiment will be described in detail.

(package)
The package includes a conductive member that functions as an electrode and a substrate that holds the conductive member. The package serves as a base on which a semiconductor element such as a light emitting element is placed, and includes a recess in which the semiconductor element can be placed. Further, the conductive member includes a wire connection portion on which the wire is placed.

  The recess has a bottom surface and a side wall. The whole or part of the bottom surface of the recess may be made of a conductive member, or the whole or part thereof may be made of a substrate. Moreover, it can be set as the structure which affixes the frame different from the board | substrate which comprises a bottom face.

  The bottom surface of the recess has an area where a semiconductor element can be placed. The bottom surface of the recess may be formed of either or both of a molded resin and a lead. The inner surface of the recess may be composed of either or both of the lead and the molded resin.

  The shape of the bottom surface of the recess is not particularly limited, and can be various shapes such as a circle, a rectangle, a polygon, and a combination thereof. The angle formed between the inner side surface of the concave portion and the bottom surface of the concave portion can be 90 degrees or more, and 90 degrees is preferable in order to suppress the scooping of the sealing member. It is preferable to set it to about 70 degrees or more.

  The wire connection part is a part of the conductive member and may have at least an area to which the wire can be connected, and may have one or a plurality of parts separated into two or more. The wire connection portion may be a flat surface or a step, an uneven surface, or the like.

  As the conductive member, a lead or a wiring can be used. The lead is mainly composed of a metal plate and plating on the surface thereof. The metal plate is patterned into a desired shape by a processing method such as etching, pressing, punching, or blasting.

  Examples of the material for the metal plate include, for example, Fe, Ni, Co, Ti, Sc, Nb, Zn, Zr, W, Mo, Ta, Cu, Al, Au, Pt, Ag, Rh, Ru, Pd, and Os. , Ir, Hf, V, Mn, Cr, La, Y, Sn and the like, or alloys thereof. These may be a single layer or a laminated structure (for example, a clad material). It is preferable to use Fe, Ni, or Cu as the main component. Moreover, non-metals, such as Si and P, may be contained as a trace content element.

  The thickness of the metal plate is, for example, preferably about 60 to 1000 μm, and more preferably 100 to 500 μm.

  Plating is preferably formed on the surface of the metal plate. The plating thickness is preferably 2 to 10 μm. Examples of the material used for plating include Au (gold), Cu (copper), Pt, Pd, Al, W, Mo, Ru, Rh, Ni, and Ag. These can be used alone (single layer) or in a structure in which a plurality are laminated. As a laminated structure, Cu / Ni / Pd / Au / Ag etc. are mentioned from the surface side of a metal plate, for example, Cu / Ag is especially preferable.

  The plating does not necessarily have to be formed on the entire surface of the metal plate, and the metal plate may be partially exposed. As described above, the plating having silver as the outermost surface is preferably formed on a region irradiated with light from the light emitting element, for example, on the surface on which the light emitting element is placed. In addition, the plating as described above is not necessarily required in a region where light from the light emitting element is not irradiated, for example, a surface to which solder or the like is bonded when the semiconductor device is mounted.

  As the conductive member, for example, a wiring plated on a substrate can be used. In this case, the same material as the above plating material can be used.

  The substrate is an insulating member that integrally holds a lead serving as a pair of positive and negative electrodes. For example, resin, ceramic or the like can be used. The resin can be formed of a resin such as a thermosetting resin or a thermoplastic resin. Specifically, epoxy resin composition, modified epoxy resin composition, silicone resin composition, modified silicone resin composition, silicone modified epoxy resin, epoxy modified silicone resin composition, polyimide resin composition, modified polyimide resin composition, Examples thereof include resins such as polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, and PBT resin.

  The resin may contain a light reflecting material such as titanium oxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, zinc oxide, boron nitride, mullite. Thereby, the light from a light emitting element can be reflected efficiently. In particular, it is preferable that the reflectance of the resin member with respect to light from the light emitting element is 60% or more, more preferably 70%, 80% or 90% or more. For example, when titanium oxide is used, it is preferably contained in an amount of 20 to 40% by weight, more preferably 25 to 35% by weight, based on the total weight of the resin. Moreover, black materials, such as carbon black, may contain. The light reflecting material or the black material can be appropriately adjusted depending on molding conditions such as a resin molding method and resin fluidity, and characteristics such as reflectance and mechanical strength.

  When ceramic is used as the substrate, alumina, aluminum nitride, or the like can be used.

  In addition to the substrate being integrally molded, for example, a frame formed as a separate body can be used. For example, a frame body made of resin can be attached to the upper surface of a flat ceramic substrate provided with wiring. Such a frame can be made of the same material as that mentioned above as the material of the substrate of the package. In addition to pasting a pre-formed frame, it may be formed by a method such as drawing on a substrate by drawing a fluid resin on the substrate.

(Semiconductor element)
Examples of the semiconductor element include a light emitting element and a protective element.

The light-emitting element includes a semiconductor layer that is placed on the bottom surface of the recess of the package and includes a light-emitting layer that emits light when energized, and an electrode for energizing the semiconductor layer.
The semiconductor layer includes an element substrate and a stacked body including a light emitting layer stacked on the element substrate. Or you may be comprised from the laminated body of the semiconductor which does not have an element substrate obtained by laminating | stacking the laminated body containing a light emitting layer on an element substrate, and removing a board | substrate.

  The laminated body laminated on the element substrate includes, for example, a first semiconductor layer (n-type or p-type semiconductor layer), a light-emitting layer, and a light emitting layer, optionally via one or more layers such as a buffer layer. Examples include a structure in which a second semiconductor layer (p-type or n-type semiconductor layer) is stacked in this order.

  One region of the semiconductor layer is removed in the thickness direction from the second semiconductor layer side, that is, partially removed, and the first semiconductor layer is exposed therefrom, and the first semiconductor layer other than the exposed region is exposed. A light emitting layer and a second semiconductor layer are sequentially stacked on another region.

The first semiconductor layer, the light emitting layer, and the second semiconductor layer constituting the semiconductor layer are not particularly limited. For example, In _X Al _Y Ga _1- XYN (0 ≦ X, 0 ≦ Y, A nitride compound semiconductor such as X + Y ≦ 1) is preferably used. Each of these nitride semiconductor layers may have a single layer structure, but may have a laminated structure of layers having different compositions and film thicknesses, a superlattice structure, or the like. In particular, the light emitting layer preferably has a structure of a single quantum well or a multiple quantum well in which thin films that produce quantum effects are stacked. The element substrate is not particularly limited, and examples thereof include those usually used for growing a nitride semiconductor layer. For example, sapphire, spinel, NGO, LiAlO ₂ , LiGaO ₃ , GaN and the like can be mentioned, and sapphire is more preferable.

  The pair of electrodes included in the light-emitting element is disposed on the same surface side of the semiconductor layer. The pair of electrodes may have a single layer structure as long as they are ohmic-connected to the first semiconductor layer and the second semiconductor layer described above so that the current-voltage characteristics are linear or substantially linear, respectively. A laminated structure may be used. Such an electrode can be formed with a material known in the art (for example, Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, and the like) and a structure with any thickness. For example, 10 to 300 μm is preferable.

  Examples of the protective element include a Zener diode and a bridge diode. In the present embodiment, the protection element may be placed on the bottom surface of the recess of the package, or may be placed on the top surface of the package. When placed on the upper surface of the package, it can be placed either on the same lead as the wire connection portion, on a conductive member different from the wire connection portion, or on the substrate.

(Wire)
The wire electrically connects the semiconductor element placed on the bottom surface of the concave portion of the package and the wire connecting portion. As for the wire, a ball (initial ball) formed by melting the tip of the wire passed through the insertion hole of the capillary by electric discharge or the like is connected to the wire connecting portion. Thereafter, the first to third bent portions are formed by bending at a predetermined position, and then bonded to the semiconductor element. For example, when the first bent portion is formed, the capillary moved upward from the wire connecting portion is moved in the opposite direction to the second bent portion, and once lifted from the position, the capillary is moved again. It can be formed by moving the wire connection part upward and then moving it down. Such an operation for bending the wire (capillary movement) can be applied to a bent portion other than the first bent portion, and an appropriate operation can be performed according to each position.

Examples of the wire include a conductive wire using a metal such as gold, copper, platinum, and aluminum and an alloy containing at least those metals. In particular, it is preferable to use gold having excellent thermal resistance. One or two or more wires can be used for one semiconductor device depending on the number of semiconductor elements. One wire connection portion or a plurality of two or more wires may be connected to one wire connection portion. The diameter of the wire is preferably 18 μm to 30 μm. The linear expansion coefficient of the wire is preferably 14.2 × 10 ⁻⁶ or more and 19.7 × 10 ⁻⁶ or less, and more preferably 17.6 × 10 ⁻⁶ or more and 18.9 × 10 ⁻⁶ or less.
Yes.

(Sealing member)
The sealing member is a member that protects electronic components such as semiconductor elements (light emitting elements, protective elements, etc.) and wires from dust, moisture, external force, and the like. The sealing member includes a resin as a main constituent member and is filled in the recess of the package. The sealing member is formed so as to cover the entire semiconductor element placed in the recess and to cover a part of the wire. Since the third bent portion, which is the bent portion closest to the semiconductor element, is at the highest position and is formed above the bottom surface of the recess, the wire is formed of the third bent portion and the semiconductor layer. Is formed so as to cover the wire therebetween.

  The sealing member can be formed by a potting (dropping) method.

As a material of the sealing member, a material having translucency capable of transmitting light from the light emitting element and light resistance is preferable. Moreover, the linear expansion coefficient is preferably 3 × 10 ⁻⁶ or more and 350 × 10 ⁻⁶ or less. Specific examples of the material include a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition, which have a light-transmitting property capable of transmitting light from a light-emitting element. An insulating resin composition can be mentioned. In addition, a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one of these resins can be used. Furthermore, it is not limited to these organic materials, and inorganic materials such as glass and silica sol can also be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (phosphor), and the like can be included as desired.

  Examples of the phosphor include oxide-based, sulfide-based, and nitride-based phosphors. For example, when a gallium nitride-based light emitting device that emits blue light is used as the light emitting device, a YAG system that absorbs blue light to emit yellow to green light, a LAG system, a SiAlON system that emits green light (β sialon), a SCASN that emits red light, At least one of CASN type, KSF type phosphor (K2SiF6: Mn), sulfide type phosphor, nanophosphor, or the like can be used. These phosphors are preferably contained in the sealing member in an amount of 5% by mass to 120% by mass.

(Translucent member)
The translucent member is provided so as to cover the sealing member and the upper surface of the package. At this time, it is provided so as to cover the wire connection portion. Thereby, a wire can be protected from the outside. For example, the translucent member preferably has a lens function such as a convex lens shape, and may further have a concave lens shape or a Fresnel lens shape. Moreover, it does not need to have a lens function. In this case, it functions as a protective member.

  The translucent member is preferably provided so as to cover the entire wire. In other words, it is preferable that the wire is provided at such a height as to be covered with the translucent member. When the shape of the translucent member is selected according to the light distribution characteristics or the like, the first, second, and third as in this embodiment are used to suppress the creeping of the sealing member in the region that fits in the shape. It is effective to set the positional relationship between the bent portions.

  As the material of the translucent member, the same material as that of the sealing member described above can be used. When it has a lens function, it is preferably transparent. The lens can be formed by compression molding, transfer molding, or the like.

(Joining member)
The semiconductor element is fixed on a conductive member (lead, wiring) or substrate via a bonding member. As the bonding member, an insulating material or a conductive material can be used. For example, the insulating material includes a resin, and the conductive material includes a eutectic material or solder. Preferable eutectic materials include an alloy mainly composed of Au and Sn, an alloy mainly composed of Au and Si, an alloy mainly composed of Au and Ge, and the like. Examples of the solder include an alloy mainly composed of Ag, Cu, and Sn, an alloy mainly composed of Cu and Sn, and an alloy mainly composed of Bi and Sn.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor device 110 ... Package 112 ... Molding resin 114 ... Conductive member (lead)
Reference Signs List 114a ... Wire connection part 116 ... Recess 116a ... Side wall 116b ... Recess side wall 116c ... Recess side wall 116d ... Recess bottom 120 ... Semiconductor element 130 ... Wire A1, B1, C1 First bent part A2, B2, C2 ... second bent portion A3, B3, C3 ... third bent portion 140 ... sealing member 150 ... lens 20 ... semiconductor device 210 ... package 212 ... substrate 214 ... conductive member (wiring)
214a ... Wire connection part 215 ... Frame (side wall of recess)
216 ... Recess 216a ... Side wall (frame body) of the recess
216b: Upper surface of the side wall of the recess (frame body) 216c ... Inner side surface of the side wall of the recess (frame body) 216d ... Bottom surface of the recess (frame body) 216e ... Outer surface of the side wall of the recess (frame body) 220 ... Semiconductor element 230 ... Wire D1, E1, F1 ... 1st bending part D2, E2, F2 ... 2nd bending part D3, E3, F3 ... 3rd bending part 240 ... Sealing member 250 ... Lens

Claims (6)

A semiconductor element;
A package comprising: a recess having a bottom surface on which the semiconductor element is placed; and a side wall; and a wire connection portion positioned outside the inner side surface of the recess;
A wire having a plurality of bent portions connecting the wire connecting portion and the semiconductor element;
A sealing member provided in the recess,
A translucent member covering the sealing member, the upper surface of the package and the wire;
With
The bent portion of the wire is
A first bent portion at a position extending upward from the wire connecting portion;
A second bent portion that extends from the first bent portion and is higher than the first bent portion and positioned outside the upper end of the inner surface of the side wall;
A semiconductor device comprising: a third bent portion extending from the second bent portion to above the bottom surface of the concave portion and positioned at the same height or higher as the second bent portion.   The semiconductor device according to claim 1, wherein the wire connection portion is located on an upper surface of a side wall of the recess.   The semiconductor device according to claim 1, wherein the wire connection portion is positioned outside an outer surface of a side wall of the recess.   4. The semiconductor device according to claim 1, wherein the third bent portion is positioned higher than the second bent portion.   The semiconductor device according to claim 1, wherein the wire connection portion is covered with a light-transmitting member.   The semiconductor device according to claim 1, wherein the sealing member includes a phosphor.

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