JP6218921B2 - Aldコーティングによるターゲットポンプ内部の保護 - Google Patents
Aldコーティングによるターゲットポンプ内部の保護 Download PDFInfo
- Publication number
- JP6218921B2 JP6218921B2 JP2016507016A JP2016507016A JP6218921B2 JP 6218921 B2 JP6218921 B2 JP 6218921B2 JP 2016507016 A JP2016507016 A JP 2016507016A JP 2016507016 A JP2016507016 A JP 2016507016A JP 6218921 B2 JP6218921 B2 JP 6218921B2
- Authority
- JP
- Japan
- Prior art keywords
- target pump
- pump
- manifold
- target
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/025—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/22—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B15/00—Pumps adapted to handle specific fluids, e.g. by selection of specific materials for pumps or pump parts
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C2230/00—Manufacture
- F04C2230/90—Improving properties of machine parts
- F04C2230/91—Coating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F05—INDEXING SCHEMES RELATING TO ENGINES OR PUMPS IN VARIOUS SUBCLASSES OF CLASSES F01-F04
- F05C—INDEXING SCHEME RELATING TO MATERIALS, MATERIAL PROPERTIES OR MATERIAL CHARACTERISTICS FOR MACHINES, ENGINES OR PUMPS OTHER THAN NON-POSITIVE-DISPLACEMENT MACHINES OR ENGINES
- F05C2253/00—Other material characteristics; Treatment of material
- F05C2253/12—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Compressor (AREA)
- General Engineering & Computer Science (AREA)
Description
Claims (16)
- ターゲットポンプの内部を保護する方法であって、
吸入マニホールドをターゲットポンプ吸入口に装着すること、及び、排出マニホールドを前記ターゲットポンプ排出口に装着することと;
前記ターゲットポンプが動作継続中に、前記吸入マニホールドを通じて前記ターゲットポンプ内部に反応ガスを順次吸入し、前記排出マニホールドを通じて該反応ガスを順次排出することによって、前記ターゲットポンプ内部を順次自己飽和表面反応(sequential self-saturating surface reaction)に曝すことと;
前記ターゲットポンプ吸入口から前記吸入マニホールドを取り外すこと、及び、前記ターゲットポンプ排出口から前記排出マニホールドを取り外すことと;
を含む、方法。 - 前記吸入マニホールド及び前記排出マニホールドを備える移動型ポンプ保護装置により実施される、請求項1に記載の方法。
- 前記排出マニホールドに装着された真空ポンプによって、前記ターゲットポンプ内部から反応残留物及びパージガスを吸い出すことを含む、請求項1又は2に記載の方法。
- 他の加熱手段を用いずに前記ターゲットポンプを動作させ続けることによって、要求されるプロセス温度を与えることを含む、請求項1から3の何れかに記載の方法。
- 前記吸入マニホールドは1つ又は複数のインフィードライン及び該インフィードラインの制御要素備え、該制御要素はコンピュータ実装された制御システムによって制御される、請求項1から4の何れかに記載の方法。
- 1列に配置された複数のターゲットポンプを通じて流路を形成し、該流路を用いて、前記複数のターゲットポンプの内部の保護を同時に行うことを含む、請求項1から5の何れかに記載の方法。
- 前記列における前段のポンプの排出マニホールドを後段のポンプのポンプ吸入口に装着することによって、前記流路を形成することを含む、請求項6に記載の方法。
- 常温から摂氏150度までの温度範囲で前記ターゲットポンプ内部を順次自己飽和表面反応に曝すことを含む、請求項1から7の何れかに記載の方法。
- 前記ターゲットポンプは真空ポンプである、請求項1から8の何れかに記載の方法。
- ターゲットポンプの内部を保護する方法であって、
吸入マニホールドをターゲットポンプ吸入口に装着すること、及び、排出マニホールドを前記ターゲットポンプ排出口に装着することと;
前記ターゲットポンプが動作していない間に、前記吸入マニホールドを通じて前記ターゲットポンプ内部に反応ガスを順次吸入し、前記排出マニホールドを通じて該反応ガスを順次排出することによって、前記ターゲットポンプ内部を順次自己飽和表面反応(self-saturating surface reaction)に曝すことと;
前記ターゲットポンプ吸入口から前記吸入マニホールドを取り外すこと、及び、前記ターゲットポンプ排出口から前記排出マニホールドを取り外すことと;
を含む、方法。 - ターゲットポンプの内部を保護する装置であって、
ターゲットポンプに装着されるように設計された吸入マニホールドと;
ターゲットポンプに装着されるように設計された排出マニホールドと
を備え、使用されるとき、請求項1から10の何れかに記載の方法を実行する、装置。 - 前記装置は使用されるとき、前記ターゲットポンプが動作継続中に、前記吸入マニホールドを通じて前記ターゲットポンプ内部に反応ガスを順次吸入し、前記排出マニホールドを通じて該反応ガスを順次排出することによって、前記ターゲットポンプ内部を順次自己飽和表面反応に曝すように構成される、請求項11に記載の装置。
- 前記吸入マニホールドは、前駆体蒸気及びパージガスのインフィードライン、及び該インフィードラインの制御要素を備える、請求項11又は12に記載の装置。
- 前記排出マニホールドは真空ポンプを備える、請求項11から13の何れかに記載の装置。
- 前記吸入マニホールドはターゲットポンプ固有の装着部品を備え、該装着部品は該吸入マニホールドを前記ターゲットポンプ吸入口に装着するように構成される、請求項11から14の何れかに記載の装置。
- 移動型である、請求項11から15の何れかに記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2013/050393 WO2014033359A1 (en) | 2013-04-10 | 2013-04-10 | Protecting a target pump interior with an ald coating |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016520717A JP2016520717A (ja) | 2016-07-14 |
JP6218921B2 true JP6218921B2 (ja) | 2017-10-25 |
Family
ID=50182574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016507016A Active JP6218921B2 (ja) | 2013-04-10 | 2013-04-10 | Aldコーティングによるターゲットポンプ内部の保護 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9869020B2 (ja) |
EP (1) | EP2984206B1 (ja) |
JP (1) | JP6218921B2 (ja) |
KR (4) | KR20150139861A (ja) |
CN (1) | CN105143506B (ja) |
RU (1) | RU2630733C2 (ja) |
SG (1) | SG11201507165PA (ja) |
TW (1) | TWI638098B (ja) |
WO (1) | WO2014033359A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11686300B2 (en) | 2020-11-10 | 2023-06-27 | Sumitomo Heavy Industries, Ltd. | Cryopump and regeneration method of cryopump |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150024152A1 (en) | 2013-07-19 | 2015-01-22 | Agilent Technologies, Inc. | Metal components with inert vapor phase coating on internal surfaces |
US10767259B2 (en) | 2013-07-19 | 2020-09-08 | Agilent Technologies, Inc. | Components with an atomic layer deposition coating and methods of producing the same |
KR102254473B1 (ko) * | 2014-03-03 | 2021-05-25 | 피코순 오와이 | Ald 코팅에 의한 가스 컨테이너 내부의 보호 방법 |
DE102014016410A1 (de) | 2014-11-05 | 2016-05-12 | Linde Aktiengesellschaft | Gasbehälter |
CN112575313A (zh) * | 2015-01-14 | 2021-03-30 | 安捷伦科技有限公司 | 具有原子层沉积涂层的部件及其制备方法 |
US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
US9825428B2 (en) * | 2015-09-25 | 2017-11-21 | TeraDiode, Inc. | Coating process for laser heat sinks |
KR102733023B1 (ko) | 2017-12-07 | 2024-11-20 | 램 리써치 코포레이션 | 챔버 내 산화 내성 보호 층 컨디셔닝 |
US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US11028480B2 (en) | 2018-03-19 | 2021-06-08 | Applied Materials, Inc. | Methods of protecting metallic components against corrosion using chromium-containing thin films |
US11015252B2 (en) * | 2018-04-27 | 2021-05-25 | Applied Materials, Inc. | Protection of components from corrosion |
US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
EP3959356A4 (en) | 2019-04-26 | 2023-01-18 | Applied Materials, Inc. | METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03199699A (ja) | 1989-12-27 | 1991-08-30 | Ntn Corp | ターボ分子ポンプ |
FI104383B (fi) * | 1997-12-09 | 2000-01-14 | Fortum Oil & Gas Oy | Menetelmä laitteistojen sisäpintojen päällystämiseksi |
JP2002158212A (ja) | 2000-11-20 | 2002-05-31 | Sony Corp | 半導体装置の製造装置 |
DE10108810A1 (de) | 2001-02-16 | 2002-08-29 | Berlin Heart Ag | Vorrichtung zur axialen Förderung von Flüssigkeiten |
US7026009B2 (en) | 2002-03-27 | 2006-04-11 | Applied Materials, Inc. | Evaluation of chamber components having textured coatings |
US7572115B2 (en) | 2002-07-19 | 2009-08-11 | Innovative Mag-Drive, Llc | Corrosion-resistant rotor for a magnetic-drive centrifugal pump |
JP4959333B2 (ja) * | 2003-05-09 | 2012-06-20 | エーエスエム アメリカ インコーポレイテッド | 化学的不活性化を通じたリアクタ表面のパシベーション |
JP4313138B2 (ja) | 2003-09-29 | 2009-08-12 | 忠弘 大見 | 製造装置システム |
EP1666625A1 (de) | 2004-12-01 | 2006-06-07 | Siemens Aktiengesellschaft | Verfahren zur Beschichtung von Bauteilen im Inneren einer Vorrichtung |
US7541069B2 (en) | 2005-03-07 | 2009-06-02 | Sub-One Technology, Inc. | Method and system for coating internal surfaces using reverse-flow cycling |
US20090194233A1 (en) | 2005-06-23 | 2009-08-06 | Tokyo Electron Limited | Component for semicondutor processing apparatus and manufacturing method thereof |
JP5028755B2 (ja) | 2005-06-23 | 2012-09-19 | 東京エレクトロン株式会社 | 半導体処理装置の表面処理方法 |
DE202009004157U1 (de) | 2009-03-28 | 2009-09-03 | Fischer, Francesco Peter, Dipl.-Ing. | Fluidenergiemaschine mit Beschichtung |
CN102649915B (zh) | 2011-02-28 | 2015-08-26 | 通用电气公司 | 气化装置中使用的泵及该泵的耐磨性的方法 |
-
2013
- 2013-04-10 KR KR1020157028211A patent/KR20150139861A/ko not_active Ceased
- 2013-04-10 CN CN201380075463.8A patent/CN105143506B/zh active Active
- 2013-04-10 RU RU2015142107A patent/RU2630733C2/ru active
- 2013-04-10 KR KR1020217035229A patent/KR20210134991A/ko not_active Ceased
- 2013-04-10 SG SG11201507165PA patent/SG11201507165PA/en unknown
- 2013-04-10 US US14/783,516 patent/US9869020B2/en active Active
- 2013-04-10 WO PCT/FI2013/050393 patent/WO2014033359A1/en active IP Right Grant
- 2013-04-10 EP EP13832495.9A patent/EP2984206B1/en active Active
- 2013-04-10 JP JP2016507016A patent/JP6218921B2/ja active Active
- 2013-04-10 KR KR1020237006516A patent/KR20230032000A/ko not_active Ceased
- 2013-04-10 KR KR1020207026635A patent/KR102321347B1/ko active Active
-
2014
- 2014-03-14 TW TW103109618A patent/TWI638098B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11686300B2 (en) | 2020-11-10 | 2023-06-27 | Sumitomo Heavy Industries, Ltd. | Cryopump and regeneration method of cryopump |
Also Published As
Publication number | Publication date |
---|---|
US20160076148A1 (en) | 2016-03-17 |
SG11201507165PA (en) | 2015-10-29 |
CN105143506B (zh) | 2018-04-10 |
KR20150139861A (ko) | 2015-12-14 |
RU2630733C2 (ru) | 2017-09-12 |
TWI638098B (zh) | 2018-10-11 |
KR102321347B1 (ko) | 2021-11-04 |
RU2015142107A (ru) | 2017-05-12 |
KR20230032000A (ko) | 2023-03-07 |
EP2984206A1 (en) | 2016-02-17 |
KR20200110464A (ko) | 2020-09-23 |
EP2984206B1 (en) | 2025-06-04 |
KR20210134991A (ko) | 2021-11-11 |
WO2014033359A1 (en) | 2014-03-06 |
US9869020B2 (en) | 2018-01-16 |
EP2984206A4 (en) | 2017-01-25 |
CN105143506A (zh) | 2015-12-09 |
TW201502377A (zh) | 2015-01-16 |
JP2016520717A (ja) | 2016-07-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6218921B2 (ja) | Aldコーティングによるターゲットポンプ内部の保護 | |
US20230383404A1 (en) | Ald apparatus, method and valve | |
TWI588286B (zh) | 經改良的電漿強化原子層沉積方法、周期及裝置 | |
JP6302082B2 (ja) | Aldコーティングによるガスコンテナ内部の保護 | |
KR101662421B1 (ko) | 트랩 장치 및 성막 장치 | |
JP6363408B2 (ja) | 成膜装置および成膜方法 | |
US20040187784A1 (en) | Continuous flow deposition system | |
JP2004124193A (ja) | 処理装置 | |
US20090088001A1 (en) | Substrate processing apparatus and manufacturing method of semiconductor device | |
JP6374973B2 (ja) | Aldコーティングによる中空ボディ内面の保護 | |
JP2007281083A (ja) | 成膜装置及び成膜方法 | |
JP6582075B2 (ja) | Aldコーティングによるガスコンテナ内部の保護 | |
JP2004277772A (ja) | 処理装置 | |
JP6595671B2 (ja) | Aldコーティングによる中空ボディ内面の保護 | |
KR20220065684A (ko) | 반응기 및 이와 관련된 방법 | |
WO2015186319A1 (ja) | 成膜装置、成膜方法及び記憶媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161025 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170315 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170907 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170926 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6218921 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |