JP6197325B2 - Manufacturing method of electronic device - Google Patents

Description

  The present invention relates to an electronic device manufacturing method.

  A technique is known in which terminals of electronic components are joined and electrically connected using a joining material. As a bonding material, in addition to solder containing one or more components, a resin composition containing conductive particles such as solder is known.

JP 2007-242783 A JP 2011-005521 A JP 2010-040893 A

  In joints between terminals of electronic components, connection failure such as cracks, peeling, disconnection, etc. may occur due to external forces such as vibration and impact and thermal stress caused by differences in thermal expansion coefficient between electronic components. .

According to one aspect of the present invention, a first electronic component having a first terminal, a second electronic component having a second terminal, the first terminal and the first element in either one of the second terminal A step of joining the first terminal and the second terminal provided with an inner layer of the first element layer using a joining material; and energizing between the joined first terminal and the second terminal. And a step of moving the first element to the bonding material.

  According to the disclosed technology, it is possible to change the composition of the bonding material by energizing between the terminals bonded using the bonding material and moving a predetermined element contained in one terminal to the bonding material. . As a result, it is possible to improve the strength of the joint portion between the terminals, suppress the occurrence of connection failure such as disconnection, and realize an electronic device excellent in connection reliability between electronic components.

It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 1st Embodiment. It is a figure which shows an example of the electronic device which concerns on 1st Embodiment. It is a figure which shows another example of the electronic device which concerns on 1st Embodiment. It is a figure which shows the modification of the electronic device which concerns on 1st Embodiment. It is a figure which shows the modification of the manufacturing method of the electronic device which concerns on 1st Embodiment. It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 2nd Embodiment. It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 3rd Embodiment. It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 4th Embodiment. It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 5th Embodiment. It is a figure which shows an example of the manufacturing method of the electronic device which concerns on 6th Embodiment.

First, the first embodiment will be described.
FIG. 1 is a diagram illustrating an example of a method of manufacturing an electronic device according to the first embodiment. FIG. 1A to FIG. 1C schematically show a cross-section of the main part of each manufacturing process of the electronic device according to the first embodiment.

  First, as shown in FIG. 1A, an electronic component 20 and an electronic component 30 to be joined are prepared. The electronic component 20 can be, for example, a semiconductor element (semiconductor chip), a semiconductor device (semiconductor package) in which the semiconductor chip is mounted on a circuit board (package board), or a circuit board (printed board, interposer, etc.). Similarly, the electronic component 30 can be a semiconductor chip, a semiconductor package, or a circuit board.

  The electronic component 20 has a terminal (electrode) 21 provided on one surface thereof (a surface facing the electronic component 30). The terminal 21 is formed using, for example, copper (Cu) or a material containing Cu. The terminal 21 can be formed using, for example, a plating method. Although FIG. 1A illustrates one terminal 21, the electronic component 20 may be provided with a plurality of terminals 21. The terminal 21 becomes the external connection terminal 21 </ b> A of the electronic component 20.

  Solder 50 is provided on the terminal 21 of the electronic component 20 as a bonding material used for bonding to the electronic component 30. For the solder 50, for example, a solder containing tin (Sn) or Sn is used. The solder 50 can be provided, for example, by mounting solder balls on the terminals 21 and performing reflow at a predetermined temperature.

  The electronic component 30 has a terminal (electrode) 31 provided on one surface thereof (a surface facing the electronic component 20). The terminal 31 of the electronic component 30 is provided at a position corresponding to the terminal 21 of the electronic component 20. The terminal 31 is formed using, for example, Cu or a material containing Cu. The terminal 31 can be formed using, for example, a plating method. Although FIG. 1A illustrates one terminal 31, the electronic component 30 may be provided with a plurality of terminals 31.

  An element layer 40 containing a predetermined element is provided on the terminal 31 of the electronic component 30. The element layer 40 is made of a material containing an element that can be included in the solder 50 to change characteristics of the solder 50, for example, mechanical characteristics such as elastic modulus. For example, the element layer 40 includes a material containing an element that is contained in the solder 50 and changes the structure of the solder 50, and is contained in the solder 50 and reacts with the solder 50 to form an intermetallic compound (IMC). A material containing an element that forms the film is used. Examples of such elements include nickel (Ni), cobalt (Co), tungsten (W), gold (Au), silver (Ag), and Cu. The element layer 40 can be formed on the terminal 31 of the electronic component 30 by using a plating method, for example.

The terminal 31 and the element layer 40 provided thereon serve as an external connection terminal 31A of the electronic component 30.
The electronic component 20 and the electronic component 30 as described above are prepared, and the terminal 21 provided with the solder 50 and the terminal 31 provided with the element layer 40 are opposed to each other as shown in FIG. Align. Then, heat treatment is performed at a temperature at which the solder 50 melts, the electronic component 20 is pressed toward the electronic component 30 or the electronic component 30 is pressed toward the electronic component 20, and then cooled to solidify the solder 50. As a result, as shown in FIG. 1B, the terminal 21 of the electronic component 20 and the terminal 31 of the electronic component 30 provided with the element layer 40 are bonded via the solder 50 (bonding portion 51). Connect.

  After the electronic component 20 and the electronic component 30 are joined using the solder 50 as described above, current is passed between the terminals 21 and 31 using the power source 70 as shown in FIG. In this example, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode. The predetermined element 40a included in the element layer 40 is moved into the solder 50 (electromigration) by the flow of electrons (current) during energization.

  The energization conditions at this time, for example, the current density and the energization time, are set to values such that the element 40a included in the element layer 40 moves into the solder 50 by electromigration. The energization is performed by a conductive portion (a circuit including the terminal 21) in the electronic component 20 electrically connected to the terminal 21 and a conductive portion (a circuit including the terminal 31) in the electronic component 30 electrically connected to the terminal 31. ) Can be used.

  In this way, the element 40 a included in the element layer 40 is moved from the element layer 40 into the solder 50 by energizing between the terminal 21 and the terminal 31 after being joined using the solder 50. Thereby, the mutual terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a, and an electronic device including the electronic component 20 and the electronic component 30 is obtained.

FIG. 2 is a diagram illustrating an example of an electronic device according to the first embodiment. FIG. 2 schematically illustrates a cross-section of a main part of an example of the electronic device according to the first embodiment.
An electronic device 10 illustrated in FIG. 2 includes an electronic component 20 and an electronic component 30 that are bonded using the method illustrated in FIG. The joint 51 between the terminal 21 of the electronic component 20 and the terminal 31 of the electronic component 30 has a structure in which a predetermined amount of the element 40a is added by energization after joining using the solder 50 as described above. It has become. For example, by adding a predetermined amount of the element 40a to the solder 50 in this way, it is possible to obtain a joint 51a in which the structure of the solder 50 is refined, the elongation characteristics are improved, and the elastic modulus is reduced. By using the method illustrated in FIG. 1, it is possible to obtain the electronic device 10 that is excellent in mechanical strength of the joint portion 51a between the electronic component 20 and the electronic component 30 and has high joining reliability.

  Regardless of the movement of the element 40a caused by energization as described above, if an element corresponding to the element 40a is to be added to the solder in advance, if the melting point of the element is sufficiently higher than that of the solder, Heat treatment at a high temperature exceeding the melting point of the element is required. Due to the high melting point of the element, it may be difficult to add a certain amount (for example, 0.005 wt% or more) of the element into the solder. Further, even if a certain amount of element can be added into the solder, the melting point of the solder increases thereby, so that the solderability may deteriorate.

  On the other hand, in the method illustrated in FIG. 1, when the terminal 21 and the terminal 31 are joined using the solder 50 (FIGS. 1A and 1B), heat treatment at a temperature corresponding to the melting point of the solder 50 used. I do. And after joining using the solder 50, it supplies with electricity between the terminal 21 and the terminal 31, and the element 40a is moved in the solder 50 from the element layer 40 (FIG.1 (C)). Therefore, in order to obtain the electronic device 10 in which the terminal 21 and the terminal 31 are joined at the joint portion 51a as shown in FIG. There is no need to do it. Further, after joining the terminal 21 and the terminal 31 with the solder 50, the element 40a is moved into the solder 50 by energization to form the joint portion 51a. Therefore, the melting point is reduced by adding a predetermined element in advance as described above. There is no need to use elevated solder. Problems such as a decrease in solderability due to the use of such solder can also be avoided.

  When the element 40a is moved from the element layer 40 by energization between the terminal 21 and the terminal 31 after joining with the solder 50 (FIG. 1C), while performing heat treatment at a temperature at which the solder 50 does not melt, It may be energized. For example, after joining with the solder 50, the terminal 21 and the terminal 31 are energized while performing heat treatment at a temperature of 100 ° C. to 150 ° C. By energizing while performing heat treatment in this way, the movement of the element 40a from the element layer 40 is promoted, and the element 40a can be efficiently added into the solder 50.

  Further, after the element 40a is moved from the element layer 40 by energizing between the terminal 21 and the terminal 31 joined using the solder 50 (FIG. 1C or FIG. 2), the temperature at which the solder 50 does not melt, Alternatively, the heat treatment may be performed at a temperature at which the solder 50 is melted. By performing heat treatment after moving the element 40a in this way, the crystal structure of the solder 50 containing the element 40a is stabilized or reconfigured, or the solder 50 and the element 40a contained therein are reacted to form an IMC. It becomes possible to do.

FIG. 3 is a diagram illustrating another example of the electronic device according to the first embodiment. FIG. 3 schematically illustrates a cross-section of a main part of another example of the electronic device according to the first embodiment.
The electronic device 10 illustrated in FIG. 3 includes an electronic component 20 and an electronic component 30 that are bonded using the method illustrated in FIG. The joint portion 51 between the terminal 21 and the terminal 31 of the electronic device 10 shown in FIG. 3 includes an element 40a that has moved from the element layer 40 due to energization after joining with the solder 50 as shown in FIG. The IMC junction 51b is formed by the reaction of

  Such an IMC joint 51b can be formed by performing a heat treatment at a temperature at which the solder 50 does not melt, for example, when energizing after joining the terminal 21 and the terminal 31 using the solder 50. Alternatively, the IMC joint 51b is formed by conducting a heat treatment at a temperature at which the solder 50 does not melt or at a temperature at which the solder 50 melts after energization between the terminal 21 and the terminal 31 joined using the solder 50, for example. Can do. When forming the IMC joint 51b, the heat treatment time is adjusted in addition to the heat treatment temperature.

  By using the IMC as the bonding portion 51b, the bonding strength between the electronic component 20 and the electronic component 30 is increased, and a stable bonding portion 51b that suppresses the diffusion of the solder component with respect to the current that flows during the operation of the electronic device 10 is formed. It becomes possible. As a result, the electronic device 10 having high bonding reliability can be obtained.

  In the method for manufacturing the electronic device 10 described above, the film thickness of the element layer 40 or the content of the element 40a in the element layer 40 can be set based on the composition of the junction 51 (51a, 51b) to be formed. it can.

  Further, based on the composition of the joint 51 (51a, 51b) to be formed, the amount of movement of the element 40a from the element layer 40 into the solder 50 is subjected to heat treatment during current flow, current flow time, current flow time, or after current flow. In some cases, the temperature can be adjusted according to the temperature and time of the heat treatment.

  In addition to the element 40a included in the element layer 40, the junction 51 (51a, 51b) may include an element (for example, Cu) included in the terminal 31 that is moved by electromigration.

Next, modified examples will be described.
FIG. 4 is a diagram illustrating a modification of the electronic device according to the first embodiment. FIG. 4 schematically shows a cross-section of the main part of a modification of the electronic device according to the first embodiment.

  2 and 3 exemplify a case where the element layer 40 has disappeared from the terminal 31 after the joint portion 51 (51a, 51b) is formed by energization after joining using the solder 50. did. When all the elements 40a of the element layer 40 provided on the terminal 31 have moved into the solder 50, the state illustrated in FIGS.

  In addition, after the joining portion 51 (51a, 51b) is formed by energization after joining using the solder 50, a part of the element layer 40 remains on the terminal 31 as illustrated in FIG. It may be. When a part of the element 40a of the element layer 40 provided on the terminal 31 moves into the solder 50, the state illustrated in FIG. Even when a part of the element layer 40 remains on the terminal 31, by using a material exhibiting conductivity for the element layer 40, electrical conduction between the terminal 21 and the terminal 31 through the junction 51 is ensured. Can do.

  FIG. 5 is a diagram showing a modification of the method for manufacturing the electronic device according to the first embodiment. FIGS. 5A and 5B schematically show a cross section of the main part of each manufacturing process of the electronic device according to the first embodiment.

  In the method shown in FIG. 5, as shown in FIG. 1B, after the terminal 21 and the terminal 31 provided with the element layer 40 are joined via the solder 50, as shown in FIG. In addition, an adhesive 60 is provided between the electronic component 20 and the electronic component 30 to bond them. For example, the adhesive 60 can be a resin material such as an epoxy resin. A so-called underfill material is known as the adhesive 60 provided between the bonded semiconductor chip and the package substrate and the adhesive 60 provided between the bonded semiconductor package and the circuit substrate.

  As shown in FIG. 5A, after the terminal 21 and the terminal 31 are joined and the adhesive 60 is provided between the electronic component 20 and the electronic component 30, the power source 70 is turned on as shown in FIG. Use to energize between the terminal 21 and the terminal 31. In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is supplied between the terminal 21 and the terminal 31. By this energization, the element 40a included in the element layer 40 is moved into the solder 50, and the terminal 21 and the terminal 31 are changed to the joint 51 (51a) to which a predetermined amount of the element 40a is added, or the solder 50 is changed to IMC. It joins by the junction part 51 (51b).

  As described above, the method of moving the element 40 a by energizing between the terminal 21 and the terminal 31 after joining using the solder 50 is performed even in a state where the electronic component 20 and the electronic component 30 are bonded by the adhesive 60. It is possible.

Next, a second embodiment will be described.
FIG. 6 is a diagram illustrating an example of a method of manufacturing an electronic device according to the second embodiment. FIGS. 6A to 6C schematically show a cross section of the main part of each manufacturing process of the electronic device according to the second embodiment.

  In the method for manufacturing an electronic device according to the second embodiment, an electronic component 30 in which an element layer 40 is provided in the inner layer (lower layer than the surface layer) of the terminal 31 as shown in FIG. The terminal 31 including the element layer 40 in the inner layer can be formed by, for example, using a plating method and sequentially depositing the material of the terminal 31, the material of the element layer 40, and the material of the terminal 31. The terminal 31 and the element layer 40 provided in the inner layer serve as the external connection terminal 31 </ b> A of the electronic component 30.

  The terminal 31 of the electronic component 30 and the terminal 21 of the electronic component 20 are opposed to each other to perform alignment. Then, heat treatment at a temperature at which the solder 50 is melted and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. Thereby, as shown in FIG. 6B, the terminal 21 and the terminal 31 are joined via the solder 50 (joining portion 51).

  Thus, after joining the electronic component 20 and the electronic component 30 using the solder 50, as shown in FIG.6 (C), it supplies with electricity between the mutual terminals 21 and 31 using the power supply 70. FIG. In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is supplied between the terminal 21 and the terminal 31. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a. After joining, heat treatment may be performed at a predetermined temperature.

As a result, an electronic device including the electronic component 20 and the electronic component 30 in which the terminals 21 and 31 are electrically connected to each other is obtained.
In addition to the element 40a included in the element layer 40, an element (for example, Cu) included in the terminal 31 may be included in the junction 51 between the terminal 21 and the terminal 31 by being moved by electromigration.

  As described above, even when the element layer 40 is provided in the inner layer of the terminal 31, it is possible to employ a method in which the element 40 a is moved by energization between the terminal 21 and the terminal 31 after joining using the solder 50. is there.

Next, a third embodiment will be described.
FIG. 7 is a diagram illustrating an example of a method of manufacturing an electronic device according to the third embodiment. FIG. 7A to FIG. 7C schematically show a cross section of the main part of each manufacturing process of the electronic device according to the third embodiment.

  In the method for manufacturing an electronic device according to the third embodiment, an electronic component 30 having a surface layer 41 provided on an element layer 40 provided on a terminal 31 as shown in FIG. Use. For the surface layer 41, for example, a material having higher wettability of the solder 50 than the element layer 40 is used. For example, when a layer such as Ni or Co is used for the element layer 40, the surface layer 41 can be one that includes at least a layer such as Au, Ag, Cu, palladium (Pd), or platinum (Pt) on the surface. The surface layer 41 can be formed on the element layer 40 by using, for example, a plating method. The terminal 31, the element layer 40, and the surface layer 41 serve as the external connection terminal 31A of the electronic component 30.

  Thus, the terminal 31 of the electronic component 30 provided with the element layer 40 and the surface layer 41 and the terminal 21 of the electronic component 20 are opposed to perform alignment. Then, heat treatment at a temperature at which the solder 50 is melted and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. Thereby, as shown in FIG. 7B, the terminal 21 and the terminal 31 are joined via the solder 50 (joining portion 51). Since the surface layer 41 is provided above the terminal 31, the molten solder 50 is easily wetted on the surface layer 41, and it is possible to bond the terminal 21 and the terminal 31 satisfactorily while suppressing the occurrence of non-bonding. Become. 7B, part or all of the elements included in the surface layer 41 may be consumed for the reaction with the solder 50.

  Thus, after joining the electronic component 20 and the electronic component 30 using the solder 50, as shown in FIG.7 (C), it supplies with electricity between the mutual terminals 21 and 31 using the power supply 70. FIG. In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is supplied between the terminal 21 and the terminal 31. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a. After joining, heat treatment may be performed at a predetermined temperature.

As a result, an electronic device including the electronic component 20 and the electronic component 30 in which the terminals 21 and 31 are electrically connected to each other is obtained.
In addition to the element 40a included in the element layer 40, the element (for example, Au) included in the surface layer 41 and the element (for example, Cu) included in the terminal 31 are included in the joint portion 51 between the terminal 21 and the terminal 31. However, it may be moved and included by electromigration.

  Thus, even when the element layer 40 is provided below the surface layer 41, it is possible to adopt a method of moving the element 40a by energizing between the terminal 21 and the terminal 31 after joining using the solder 50. It is.

Next, a fourth embodiment will be described.
FIG. 8 is a diagram illustrating an example of a method of manufacturing an electronic device according to the fourth embodiment. FIGS. 8A to 8C schematically show a cross section of a main part of each manufacturing process of the electronic device according to the fourth embodiment.

  As described above, the element layer 40 including the element 40a to be moved by energization after bonding can be provided on the electronic component 20 side. In this case, the element layer 40 containing the predetermined element 40 a is provided on the terminal 21 of the electronic component 20, and the solder 50 is provided on the element layer 40. The element layer 40 can be formed on the terminal 21 using, for example, a plating method. The solder 50 can be provided, for example, by mounting solder balls on the element layer 40 and performing reflow. The terminal 21 and the element layer 40 provided thereon become the external connection terminal 21A of the electronic component 20, and the terminal 31 becomes the external connection terminal 31A of the electronic component 30.

  Thus, the terminal 21 of the electronic component 20 provided with the element layer 40 and the terminal 31 of the electronic component 30 are opposed to perform alignment. Then, heat treatment at a temperature at which the solder 50 is melted and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. As a result, as shown in FIG. 8B, the terminal 21 and the terminal 31 are joined via the solder 50 (joining portion 51).

  Thus, after joining the electronic component 20 and the electronic component 30 using the solder 50, as shown in FIG.8 (C), it supplies with electricity between the mutual terminals 21 and 31 using the power supply 70. FIG. At that time, the terminal 21 side of the electronic component 20 is used as a cathode and the terminal 31 side of the electronic component 30 is used as an anode, and electricity is supplied between the terminal 21 and the terminal 31. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the terminal 21 and the terminal 31 are joined by the joint portion 51 of the solder 50 containing the element 40a. After joining, heat treatment may be performed at a predetermined temperature.

As a result, an electronic device including the electronic component 20 and the electronic component 30 in which the terminals 21 and 31 are electrically connected to each other is obtained.
In addition to the element 40 a included in the element layer 40, the element (for example, Cu) included in the terminal 21 may be included in the junction 51 between the terminal 21 and the terminal 31 by being moved by electromigration.

  As described above, even when the element layer 40 is provided on the electronic component 20 side, it is possible to employ a method in which the element 40a is moved by energizing between the terminal 21 and the terminal 31 after joining using the solder 50. is there.

  In the fourth embodiment, after the element 40a is moved by energization, even if the element layer 40 disappears from the terminal 21 as in the case illustrated in FIGS. A part of the element layer 40 may remain on 21.

In the fourth embodiment, an adhesive 60 may be provided between the electronic component 20 and the electronic component 30 according to the example of FIG.
In the fourth embodiment, the element layer 40 may be provided in the inner layer of the terminal 21 according to the example of FIG.

Furthermore, in the fourth embodiment, a surface layer 41 may be provided on the element layer 40 on the terminal 21 in accordance with the example of FIG.
Next, a fifth embodiment will be described.

  FIG. 9 is a diagram illustrating an example of an electronic device manufacturing method according to the fifth embodiment. 9A to 9C schematically show a cross-section of the main part of each manufacturing process of the electronic device according to the fifth embodiment.

  As described above, the form of the terminal provided with the element layer 40 including the element 40a moved by energization after bonding is not particularly limited. For example, the element layer 40 as described above can be provided on the pillar electrode.

  In FIG. 9A, a pillar electrode 21a made of Cu or the like is provided as a terminal 21, and an electronic component 20 provided with a solder 50 thereon, and a pillar electrode 31a made of Cu or the like is provided as a terminal 31, and an element layer is formed thereon. The state where the electronic component 30 provided with 40 is opposed to each other is illustrated. The pillar electrode 21a and the solder 50 on the electronic component 20 side can be formed by using a plating method. By reflowing the solder after plating, the solder 50 having a round shape as shown in FIG. Is formed. Similarly, the pillar electrode 31a and the element layer 40 on the electronic component 30 side can also be formed using a plating method. The pillar electrode 21 a becomes the external connection terminal 21 A of the electronic component 20, and the pillar electrode 31 a and the element layer 40 become the external connection terminal 31 A of the electronic component 30.

  9A, heat treatment at a temperature at which the solder 50 melts and pressing of the electronic component 20 and the electronic component 30 are performed, and the solder 50 is solidified by cooling. Thus, as shown in FIG. 9B, the pillar electrode 21a and the pillar electrode 31a provided with the element layer 40 are joined via the solder 50 (joining portion 51).

  After the electronic component 20 and the electronic component 30 are joined using the solder 50 in this way, as shown in FIG. 9C, a current is applied between the pillar electrode 21a and the pillar electrode 31a using the power source 70. . In that case, the terminal 21 side of the electronic component 20 is used as an anode, and the terminal 31 side of the electronic component 30 is used as a cathode, and electricity is passed between the pillar electrode 21a and the pillar electrode 31a. When energized, heat treatment may be performed at a predetermined temperature. The element 40a contained in the element layer 40 is moved into the solder 50 by the flow of electrons (current) during energization, and the pillar electrode 21a and the pillar electrode 31a are joined by the joint portion 51 of the solder 50 containing the element 40a. . After joining, heat treatment may be performed at a predetermined temperature.

Thereby, an electronic device including the electronic component 20 and the electronic component 30 in which the pillar electrode 21a and the pillar electrode 31a are electrically connected to each other is obtained.
The junction 51 between the pillar electrode 21a and the pillar electrode 31a includes an element 40a included in the element layer 40 and an element (for example, Cu) included in the pillar electrode 31a that is moved by electromigration. Also good.

  Thus, even when the pillar electrode 21a and the pillar electrode 31a are provided as the terminal 21 and the terminal 31, respectively, a method of moving the element 40a by energizing between the terminal 21 and the terminal 31 after joining using the solder 50 is provided. It is possible to adopt.

  In the fifth embodiment, after the element 40a is moved by energization, even if the element layer 40 has disappeared from the pillar electrode 31a, as illustrated in FIGS. A part of the element layer 40 may remain on the pillar electrode 31a.

In the fifth embodiment, an adhesive 60 may be provided between the electronic component 20 and the electronic component 30 according to the example of FIG.
In the fifth embodiment, the element layer 40 may be provided in the inner layer of the pillar electrode 31a according to the example of FIG.

In the fifth embodiment, the surface layer 41 may be provided on the element layer 40 on the pillar electrode 31a according to the example of FIG.
Furthermore, in the fifth embodiment, the element layer 40 may be provided on the pillar electrode 21a on the electronic component 20 side in accordance with the example of FIG.

Next, a sixth embodiment will be described.
FIG. 10 is a diagram illustrating an example of a method of manufacturing an electronic device according to the sixth embodiment. FIGS. 10A to 10C schematically show a cross section of a main part of each manufacturing process of the electronic device according to the sixth embodiment.

  In FIG. 10A, an electronic component 20 in which a pillar electrode 21a such as Cu is provided as a terminal 21 and a solder 50 is provided thereon, and an electronic component 30 in which an element layer 40 is provided on a terminal 31 are opposed to each other. And the aligned state is shown. From such a state, through a heat treatment at a temperature at which the solder 50 is melted, the pillar electrode 21a and the terminal 31 provided with the element layer 40 are joined via the solder 50 as shown in FIG. (Junction 51). After joining, as shown in FIG. 10C, electricity is applied between the pillar electrodes 21 a and the terminals 31 using the power source 70. In that case, electricity is passed between the pillar electrode 21a and the terminal 31 with the pillar electrode 21a side of the electronic component 20 as an anode and the terminal 31 side of the electronic component 30 as a cathode. By this energization, the element 40a contained in the element layer 40 is moved into the solder 50, and the pillar electrode 21a and the terminal 31 are joined (joined part 51), and an electronic device is obtained.

  In this way, even in the combination of the terminal 21 of the pillar electrode 21a and the terminal 31 provided with the element layer 40, the element 40a is moved by energization between the terminal 21 and the terminal 31 after joining using the solder 50. Can be adopted.

  In the sixth embodiment, after the element 40a is moved by energization, even if the element layer 40 disappears from the terminal 31 as in the case illustrated in FIGS. A part of the element layer 40 may remain on 31.

In the sixth embodiment, before energization, an adhesive 60 may be provided between the electronic component 20 and the electronic component 30 according to the example of FIG.
In the sixth embodiment, the element layer 40 may be provided in the inner layer of the terminal 31 according to the example of FIG.

In the sixth embodiment, the surface layer 41 may be provided on the element layer 40 on the terminal 31 according to the example of FIG.
Furthermore, in the sixth embodiment, the element layer 40 may be provided on the pillar electrode 21a on the electronic component 20 side in accordance with the example of FIG.

The first to sixth embodiments have been described above.
The element layer 40 described above may contain two or more elements. In this case, when energization is performed after joining the terminal 21 and the terminal 31 using the solder 50, a plurality of types of elements can move from the element layer 40 into the solder 50. Thus, by moving a plurality of types of elements from the element layer 40 into the solder 50, it is possible to form a junction having a desired component and composition between the terminal 21 and the terminal 31.

  In the above description, the element layer 40 including the predetermined element 40a is provided on the surface layer or the inner layer of the terminal 21 or the terminal 31, but the element 40a is not necessarily provided in a layered manner. If the element 40a is included in the structure of the terminal 21 or the terminal 31, it can be moved into the solder 50 by energization performed after the terminal 21 and the terminal 31 are joined using the solder 50 as described above. It is.

  In the above description, the solder containing Sn is exemplified as the bonding material for bonding the terminal 21 and the terminal 31, but various types of solder can be used as the bonding material. In addition, the bonding material can be bonded to the terminal 21 and the terminal 31, and can include the predetermined element 40a by being moved by electromigration so that desired characteristics can be expressed. It is also possible to use these materials.

Examples are shown below.
[Example 1]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn solder having a ball diameter of 50 μm to 150 μm is mounted. An Ni layer having a thickness of 2 μm to 7 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

Next, the semiconductor element in which the Sn solder is mounted on the Cu electrode and the circuit board in which the Ni layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which Sn solder melts in a nitrogen (N ₂ ) atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Ni layer are joined using Sn solder.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 2]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn solder having a ball diameter of 50 μm to 150 μm is mounted. On the Cu electrode of the circuit board, a Co layer having a thickness of 2 μm to 7 μm is formed by electrolytic plating.

Next, the semiconductor element in which the Sn solder is mounted on the Cu electrode and the circuit board in which the Co layer is formed on the Cu electrode are faced and aligned. Then, heat treatment is performed at a temperature at which Sn solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Co layer are joined using Sn solder.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 3]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn solder having a ball diameter of 50 μm to 150 μm is mounted. A W layer having a thickness of 1 μm to 2 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

Next, the semiconductor element in which the Sn solder is mounted on the Cu electrode and the circuit board in which the W layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which Sn solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the W layer are joined using Sn solder.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, the current density ranges from 1.0 × 10 ⁸ A / m ^{2 to} 5.0 × 10 ⁸ A / m ² and 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 4]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag solder (Ag: 3.0%) having a ball diameter of 50 μm to 150 μm is mounted. An Ni layer having a thickness of 2 μm to 7 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

Next, the semiconductor element in which Sn—Ag solder is mounted on the Cu electrode and the circuit board on which the Ni layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Ni layer are joined using Sn—Ag solder.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 5]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag solder (Ag: 3.0%) having a ball diameter of 50 μm to 150 μm is mounted. On the Cu electrode of the circuit board, a Co layer having a thickness of 2 μm to 7 μm is formed by electrolytic plating.

Next, the semiconductor element in which the Sn—Ag solder is mounted on the Cu electrode and the circuit board in which the Co layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Co layer are joined using Sn—Ag solder.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 6]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag solder (Ag: 3.0%) having a ball diameter of 50 μm to 150 μm is mounted. A W layer having a thickness of 1 μm to 2 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

Next, the semiconductor element in which Sn—Ag solder is mounted on the Cu electrode and the circuit board in which the W layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the W layer are joined using Sn—Ag solder.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 7]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag—Cu solder (Ag: 3.0%, Cu: 0.5%) having a ball diameter of 50 μm to 150 μm is mounted. An Ni layer having a thickness of 2 μm to 7 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

Next, the semiconductor element in which the Sn—Ag—Cu solder is mounted on the Cu electrode and the circuit board in which the Ni layer is formed on the Cu electrode are faced and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag—Cu solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Ni layer are made of Sn—Ag—Cu solder. And join.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 8]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag—Cu solder (Ag: 3.0%, Cu: 0.5%) having a ball diameter of 50 μm to 150 μm is mounted. On the Cu electrode of the circuit board, a Co layer having a thickness of 2 μm to 7 μm is formed by electrolytic plating.

Next, the semiconductor element in which the Sn—Ag—Cu solder is mounted on the Cu electrode and the circuit board in which the Co layer is formed on the Cu electrode are opposed to each other and aligned. Then, heat treatment is performed at a temperature at which the Sn—Ag—Cu solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the Co layer are used with Sn—Ag—Cu solder. And join.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, a current density in the range of 1.0 × 10 ⁸ A / m ^{2 to} 2.0 × 10 ⁸ A / m ² is 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 9]
A semiconductor element provided with a Cu electrode and a circuit board provided with a Cu electrode at a position corresponding to the Cu electrode of the semiconductor element are prepared. On the Cu electrode of the semiconductor element, Sn—Ag—Cu solder (Ag: 3.0%, Cu: 0.5%) having a ball diameter of 50 μm to 150 μm is mounted. A W layer having a thickness of 1 μm to 2 μm is formed on the Cu electrode of the circuit board by electrolytic plating.

Next, the semiconductor element in which the Sn—Ag—Cu solder is mounted on the Cu electrode and the circuit board in which the W layer is formed on the Cu electrode are faced and aligned. Then, heat treatment is performed at a temperature at which Sn—Ag—Cu solder melts in an N ₂ atmosphere, and the Cu electrode of the semiconductor element and the Cu electrode of the circuit board provided with the W layer are made of Sn—Ag—Cu solder. And join.

Next, with the Cu electrode side of the semiconductor element as the anode and the Cu electrode side of the circuit board as the cathode, the current density ranges from 1.0 × 10 ⁸ A / m ^{2 to} 5.0 × 10 ⁸ A / m ² and 5 A current is passed between the Cu electrodes for about an hour to form a semiconductor device (electronic device).

[Example 10]
About the semiconductor device of Examples 1-9, after confirming that there was no electrical malfunction, the repeated temperature cycle test of -25 degreeC-125 degreeC was done 500 cycles. In any of the semiconductor devices of Examples 1 to 9, the resistance increase after the cycle test showed a good value of 10% or less.

  In addition, after confirming that the semiconductor devices of Examples 1 to 9 had no electrical problems, they were left in an environment of 85% humidity at 121 ° C. for 1000 hours, and then the increase in resistance was evaluated. In any of the semiconductor devices of Examples 1 to 9 after being left, as in the case after the cycle test, the resistance increase showed a good value of 10% or less.

Regarding the embodiment described above, the following additional notes are further disclosed.
(Additional remark 1) The process of preparing a 1st electronic component provided with the 1st terminal containing a 1st element,
Preparing a second electronic component comprising a second terminal;
Bonding the first terminal and the second terminal using a bonding material;
And a step of moving the first element to the bonding material by energizing between the bonded first terminal and the second terminal.

  (Supplementary note 2) The electronic device according to Supplementary note 1, wherein the first terminal is used as a cathode and the second terminal is used as an anode, and electricity is applied between the joined first terminal and the second terminal. Manufacturing method.

(Additional remark 3) The said 1st terminal of the said 1st electronic component prepared has a 1st element layer containing the said 1st element, The manufacturing method of the electronic device of Additional remark 1 or 2 characterized by the above-mentioned.
(Additional remark 4) The said 1st element layer is provided in the surface layer of the said 1st terminal, The manufacturing method of the electronic device of Additional remark 3 characterized by the above-mentioned.

(Additional remark 5) The said 1st element layer is provided in the inner layer of the said 1st terminal, The manufacturing method of the electronic device of Additional remark 3 characterized by the above-mentioned.
(Appendix 6) The first terminal is provided on the first element layer, and the wettability of the bonding material when the first terminal and the second terminal are bonded is higher than that of the first element layer. The method for manufacturing an electronic device according to appendix 3, further comprising a surface layer.

  (Supplementary note 7) The method according to any one of supplementary notes 1 to 6, wherein the step of moving the first element to the bonding material includes a step of moving the first element to change a structure of the bonding material. The manufacturing method of the electronic device of description.

  (Appendix 8) The step of moving the first element to the bonding material includes the step of forming an intermetallic compound by a reaction between the moved first element and the bonding material. 7. A method for manufacturing an electronic device according to claim 6.

(Supplementary Note 9) The first terminal includes a second element,
The method of manufacturing an electronic device according to any one of appendices 1 to 8, wherein the step of moving the first element to the bonding material includes a step of moving the second element to the bonding material.

  (Supplementary note 10) The electronic device according to any one of supplementary notes 1 to 9, wherein the step of moving the first element to the bonding material includes a step of performing a heat treatment at a temperature lower than a melting point of the bonding material. Manufacturing method.

  (Supplementary note 11) The electron according to any one of supplementary notes 1 to 10, further comprising a step of performing a heat treatment at a temperature lower than a melting point of the bonding material after the step of moving the first element to the bonding material. Device manufacturing method.

  (Supplementary note 12) The electron according to any one of supplementary notes 1 to 10, further comprising a step of performing a heat treatment at a temperature equal to or higher than a melting point of the bonding material after the step of moving the first element to the bonding material. Device manufacturing method.

  (Supplementary Note 13) After the step of bonding the first terminal and the second terminal using the bonding material, before the step of moving the first element to the bonding material, the first electronic component and The method for manufacturing an electronic device according to any one of appendices 1 to 12, further comprising a step of providing an adhesive between the second electronic components.

DESCRIPTION OF SYMBOLS 10 Electronic device 20, 30 Electronic component 21, 31 Terminal 21a, 31a Pillar electrode 21A, 31A External connection terminal 40 Element layer 40a Element 41 Surface layer 50 Solder 51, 51a, 51b Joint 60 Adhesive 70 Power supply

Claims (5)

The first electronic component including the first terminal and the second electronic component including the second terminal include a first element layer containing the first element in one of the first terminal and the second terminal. a step of bonding the first terminal which is the second terminal using a bonding material,
And a step of moving the first element to the bonding material by energizing between the bonded first terminal and the second terminal. One of the first terminal and the second terminal provided with the first element layer is a cathode and the other is an anode, and energization is performed between the joined first terminal and the second terminal. The method for manufacturing an electronic device according to claim 1, wherein: The surface layer in which the wettability of the bonding material when bonding the first terminal and the second terminal is higher than that of the first element layer is provided on the first element layer. A method for manufacturing the electronic device according to 1 or 2 . Wherein the step of moving the first element to the bonding material, manufacturing method of an electronic device according to any one of claims 1 to 3, characterized in that it comprises a step of performing heat treatment at a temperature lower than the melting point of the bonding material . After the step of moving the first element to the bonding material, the manufacture of electronic apparatus according to any one of claims 1 to 4, characterized in that it comprises a step of performing heat treatment at a temperature above the melting point of the bonding material Method.

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