JP2008109031A - Electronic circuit module manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic circuit module manufacturing method which forms a solder-coated layer and a metal plated layer on the same surface of a circuit substrate and can make a joint between a semiconductor element and a chip component easy. <P>SOLUTION: The method for manufacturing an electronic circuit module 1 includes a process A of forming connection terminals 3, 4, a process B of forming a solder-coated layer 11 on the first connection terminal 3, a process C of covering the connection terminal 3 by a plating resist film 20 and exposing the second connection terminal 4, a process D of forming a metal plating layer 10 on the second connection terminal 4, a process E of burying a heated bump 6 in the plating resist film 20 to abut it to the first connection terminal 3, a process F of joining the bump 6 to the first connection terminal 3, and a process G of joining the second connection terminal 4 to a chip component 8. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an electronic circuit module, and in particular, a chip component having a connection part other than a bump while bonding a semiconductor element having a bump to a connection terminal formed on a circuit board by a flip chip connection method. The present invention relates to a method for manufacturing an electronic circuit module that can be suitably used for manufacturing an electronic circuit module that is bonded by a connection method other than flip-chip connection.

  Generally, in an electronic circuit module, a semiconductor element such as an LSI or a circuit component such as a chip component such as a resistor or a capacitor is laminated. Since these circuit components are bonded to the connection terminals on the surface of the circuit board using solder, the manufacturing efficiency of the electronic circuit module varies depending on the quality of the bonding. Therefore, a plurality of methods for facilitating the bondability of semiconductor elements or chip components have been proposed.

  An example of a manufacturing method of the conventional electronic circuit module 101A is shown in FIG. As shown in FIG. 3, the conventional electronic circuit module 101 </ b> A has a connection terminal 103 formation process (FIG. 3A), a solder precoat layer 111 formation process (FIG. 3B), and connection terminals 103, in order to join the semiconductor elements 105. It is manufactured through a bonding process with the bump 106 (FIG. 3C). In recent years, since the bumps 106 and the connection terminals 103 of the semiconductor element 105 have been narrowed, it is very difficult to apply cream solder and join them together. Therefore, as shown in FIG. 3A, after the connection terminal 103 is formed on the surface 102a of the circuit board 102, the solder precoat layer 111 is applied to the surface 103a of the connection terminal 103 using a screen printer as shown in FIG. 3B. Is formed. After the formation of the solder precoat layer 111, as shown in FIG. 3C, the bumps 106 of the semiconductor element 105 are brought into contact with the solder precoat layer 111 and subjected to heat treatment by a reflow means, whereby the connection terminals 103 and the bumps 106 are joined. (See Patent Document 1).

  FIG. 4 shows another example of the manufacturing method of the conventional electronic circuit module 101B. As shown in FIG. 4, the conventional electronic circuit module 101 </ b> B has a connection terminal 104 formation process (FIG. 4A), a metal plating layer 110 formation process (FIG. 4B), and cream solder 112. It is manufactured through a coating process (FIG. 4C) and a joining process (FIG. 4D) between the connection terminal 104 and the bump 106. Since the leads 108 of the chip component 107 are not narrowed, cream solder 112 is used for bonding. Here, considering the wettability of the solder with respect to the connection terminal 104 formed using Cu, it is not preferable to apply the cream solder 112 directly on the surface 104 a of the connection terminal 104. Therefore, in the conventional method of manufacturing the electronic circuit module 101B, the Ni / Au metal plating layer 110 is formed on the surface 104a of the connection terminal 104 as shown in FIG. 4B and then plated as shown in FIG. 4C. By applying the cream solder 12 to the surface 104a of the connection terminal 104, the connection terminal 104 and the lead 107 are joined in a state where the solder wettability is improved (see Patent Document 2).

JP-A-5-206629 JP-A-6-342965

  Here, when the solder precoat layer 111 and the metal plating layer 110 are mixedly formed on the same surface 102a of the circuit board 102, Sn as a main component of the solder precoat layer 111 chemically reacts with Au of the metal plating layer 110, and the solder The film thickness of the precoat layer 111 changes. In order to avoid this, in such a case, it is necessary to metal-plate the other connection terminals 104 to be bonded to the chip component 107 after covering some of the connection terminals 103 to be bonded to the semiconductor element 105 with the resist film 120.

  However, when the solder precoat layer 111 and the metal plating layer 110 are formed together on the same surface 102 a of the circuit board 102, in order to connect the bumps 106 (see FIG. 3) of the semiconductor element 105 to some of the connection terminals 103. After the other connection terminals 104 are metal-plated, the resist film on the surface 102a of the circuit board 102 must be chemically removed using a resist remover. Accordingly, the resist film material that covers at least a part of the surface 103a of the connection terminal 103 is not a resist material having poor chemical reactivity but a chemical reaction that reacts with a plating solution used for metal plating. I had to use a highly resist material. Therefore, when metal plating is performed on the surface 104a of another connection terminal 104 in a state where a resist film having high chemical reactivity is formed on the surface 103a (see FIG. 3B) of some of the connection terminals 103, the chemical reactivity is increased. Since the high resist film is ionized and dissolved, the metal plating layer 110 cannot be stably formed.

  That is, in the conventional method of manufacturing the electronic circuit modules 101A and 101B, the solder precoat layer 111 and the surface 103a of the circuit board 102 are simply coated on the same surface 102a of the circuit board 102 by simply coating the surface 103a of the connection terminal 103 with a resist film and then plating. There is a problem that the metal plating layer 110 cannot be formed in a mixed manner. Due to this problem, when the semiconductor element 105 and the chip component 107 are bonded to the connection terminals 103 and 104 formed on the same surface 102a of the circuit board 102, the connection terminal 103 or the chip component 107 for bonding the semiconductor element 105 is bonded. Therefore, it is difficult to form or apply any one of the connecting terminals 104 to be connected, and it is difficult to join the semiconductor element 105 or the chip component 107.

  Therefore, the present invention has been made in view of these points, and is formed by mixing a solder precoat layer and a metal plating layer on the same surface of a circuit board, thereby facilitating the joining of semiconductor elements and chip components. It is an object of the present invention to provide a method of manufacturing an electronic circuit module that can be used.

  In order to achieve the above-described object, a first aspect of the method for manufacturing an electronic circuit module according to the present invention is a first terminal that serves as a terminal for connecting a plurality of bumps formed on a semiconductor element by a flip-chip connection method. And a second connection terminal which is a connection part formed on the chip component and used to connect a connection part other than the bump by a connection method other than the flip chip connection method on the surface of the circuit board. Used for forming a metal plating layer on the surface of the first connection terminal on which at least the solder precoat layer is formed, and in step B of forming the solder precoat layer on the surface of the first connection terminal. By forming a resist film for plating using a resist material that does not chemically react with the plating solution, the first connection terminal is connected to the resist for plating on the surface of the circuit board. And exposing the second connection terminal without covering with the plating resist film, and soldering the surface of the second connection terminal in a state where the first connection terminal is covered with the plating resist film Step D of forming a metal plating layer by plating a metal with good wettability, and after heating the plurality of bumps of the semiconductor element, press the plurality of heated bumps against the resist film for plating covering the first connection terminal The step E of bringing the plurality of bumps into contact with the first connection terminal by burying the plurality of bumps in the plating resist film while softening the plating resist film, and the step of bringing the plurality of bumps into contact with the first connection terminal The solder precoat layer, which is the surface layer of the first connection terminal, is melted using the heat of the bumps, and the step F, the step D, the step E, or the step of joining the plurality of bumps to the first connection terminal It is characterized in that degree and a step G of soldering the connecting portion of the chip component to the second connection terminal having a metal plating layer in after any of the steps of the F.

  According to the method of manufacturing the electronic circuit module of the first aspect of the present invention, the bumps heated while the solder precoat layer formed on the surface of the first connection terminal is covered with the resist film for plating are plated. The bump and the first connection terminal are joined by being buried in the resist film. Therefore, it is not necessary to peel off the plating resist film for mounting the semiconductor element, so that it is possible to use a resist material with poor chemical reactivity that does not react with the plating solution used for metal plating. Thereby, a solder precoat layer and a metal plating layer can be formed together on the surface of the circuit board.

  The method for manufacturing an electronic circuit module according to the second aspect of the present invention is the method for manufacturing the electronic circuit module according to the first aspect, wherein the solder precoat layer deposits chemical reaction precipitation type solder on the surface of the first connection terminal. It is characterized by being formed.

  According to the method of manufacturing the electronic circuit module of the second aspect of the present invention, the solder precoat layer can be formed only on the surface of the first connection terminal without forming a coating film on the second connection terminal. it can.

  The method for manufacturing an electronic circuit module according to the third aspect of the present invention is the method for manufacturing the electronic circuit module according to the second aspect, wherein the chemical reaction precipitation type solder comprises one element of Pb, Ag or Zn and Sn as the main components. It is characterized in that it is an alloyed solder or a solder containing Sn alloyed by utilizing an ionization tendency as one main component or a lead-free solder.

  According to the method of manufacturing the electronic circuit module of the third aspect of the present invention, a good quality solder precoat layer can be formed. In addition, it is possible to cope with environmental problems by forming a solder precoat layer using lead-free solder containing no Pb.

  A method for manufacturing an electronic circuit module according to a fourth aspect of the present invention is the method for manufacturing an electronic circuit module according to any one of the first to third aspects, wherein the semiconductor element is adsorbed in steps E and F. A feature is that heat for softening the resist film for plating and melting the solder precoat is supplied to the plurality of bumps of the semiconductor element from the suction jig placed at a predetermined position.

  According to the method of manufacturing the electronic circuit module of the fourth aspect of the present invention, the bump is heated using the suction jig that is usually used in the semiconductor element stacking process. Rather than being provided as a process, it can be performed as a process on the extension line of the conventional stacking process.

  The electronic circuit module manufacturing method according to the fifth aspect of the present invention is the electronic circuit module manufacturing method according to any one of the first to fourth aspects, wherein the second connection terminal is mainly composed of Cu or Cu. The metal plating layer is a stacked Ni / Au plating layer having Ni plating as a lower layer plating and Au plating as an upper layer.

  According to the method for manufacturing an electronic circuit module of the fifth aspect of the present invention, the combination of Cu and Ni / Au plating has good compatibility with the plating formation, so that the surface of the highly conductive Cu has solder wettability. A good metal plating layer can be formed.

  The electronic circuit module manufacturing method of the sixth aspect of the present invention is the electronic circuit module manufacturing method of any one of the first to fifth aspects, wherein the plating is performed after the step D and before the step E. An adhesive for fixing the semiconductor element to the plating resist film is applied to a surface of the resist film facing the semiconductor element.

  According to the method of manufacturing the electronic circuit module of the sixth aspect of the present invention, the semiconductor element is not formed on the first connection terminal and the plating resist film by using the entire semiconductor element as the bonding portion, instead of using only the bump as the bonding portion. Since they can be bonded, the mechanical adhesion between the semiconductor element and the circuit board can be strengthened.

  The electronic circuit module manufacturing method according to a seventh aspect of the present invention is the electronic circuit module manufacturing method according to any one of the first to sixth aspects, wherein the bump is a stud bump having a protrusion formed at the tip thereof. It is characterized by being.

  According to the method of manufacturing the electronic circuit module of the seventh aspect of the present invention, the bumps are easily formed into the plating resist film even if the plating resist film has a high viscosity or hardness, because the bump tips protrude. Can be buried.

  According to the method for manufacturing an electronic circuit module of the present invention, the bump of the semiconductor element is bonded to the first connection terminal in a state where the resist film for plating having poor chemical reactivity is formed on the surface of the first connection terminal. Therefore, since the solder precoat layer and the metal plating layer can be formed on the same surface of the circuit board, it is possible to easily join the semiconductor element and the chip component.

  Hereinafter, the manufacturing method of the electronic circuit module according to the present invention will be described with reference to FIGS.

  FIG. 1 shows an electronic circuit module 1 of the present embodiment. As shown in FIG. 1, the electronic circuit module 1 according to the present embodiment includes a first connection terminal 3 and a second connection terminal 4, LSI, IC, etc. on the same surface 2a of an insulating circuit board 2. A semiconductor element 5 and chip components 7 such as resistors and capacitors are provided. The first connection terminal 3 and the second connection terminal 4 are classified according to whether the semiconductor element 5 or the chip component 7 is connected, but since there is no difference in performance itself, they are the same. It is formed using a material.

  The first connection terminal 3 has a solder precoat layer 11 as a surface layer, and a plating resist film 20 covers the solder precoat layer 11. The plurality of bumps 6 formed on the semiconductor element 5 are buried through the plating resist film 20 so that the semiconductor element 5 is connected to the first connection terminal 3 by a flip chip connection method.

  The 2nd connection terminal 4 has the metal plating layer 10 excellent in solder wettability as a surface layer. Then, the leads (connection portions other than the bumps) 8 formed on the chip component 7 are joined to the second connection terminals 4 by a solder connection method using the cream solder 12 (connection method other than the flip chip connection method). Thus, the chip component 7 is connected to the second connection terminal 4.

  Such an electronic circuit module 1 is manufactured through steps A to G as shown in FIGS.

  In step A, a metal thin film is formed on the same surface 2a of the circuit board 2 as shown in FIG. 2A using Cu or an alloy containing Cu as a main component. After that, as shown in FIG. 2A, the first connection terminal 3 and the second connection terminal 4 are formed by patterning the metal thin film.

  In step B, as shown in FIG. 2B, a solder precoat layer 11 is formed on the surface 3 a of the first connection terminal 3. This solder precoat layer 11 deposits a resist film for soldering on the surface 2a of the circuit board 2 and the surface 4a of the second connection terminal 4 by depositing chemical reaction precipitation type solder on the surface 3a of the first connection terminal 3. It is formed only on the surface 3a of the first connection terminal 3 without being formed. Here, as the chemical reaction precipitation type solder, Pb—Sn based solder alloy, Ag—Sn based solder alloy, Zn—Sn based solder alloy, etc. are alloyed using Sn as a main component and utilizing an ionization tendency. Solder or lead-free solder is used. For example, a super solder manufactured by Harima Chemicals Co., Ltd. is used as the chemical reaction precipitation type solder of this embodiment.

  In step C, as shown in FIG. 2C, a plating resist film 20 is formed on the surface 3a of the first connection terminal 3 on which the solder precoat layer 11 is formed and the surface 2a of the circuit board 2, and then the plating is performed. The resist film 20 is subjected to patterning that exposes the second connection terminals 4 to the outside. By patterning the resist film 20 for plating, on the surface 2a of the circuit board 2, the surface 3a of the first connection terminal 3 and the surface 2a of the circuit board 2 are covered with the resist film 20 for plating, and the second connection The terminal 4 is exposed to the outside. As the resist material of the resist film 20 for plating, for example, a resist material with poor chemical reactivity that does not react with a plating solution such as PSR-4000 manufactured by Taiyo Ink is used.

  In the step D, as shown in FIG. 2D, the surface of the second connection terminal 4 in a state where the surface 3a of the first connection terminal 3 and the surface 2a of the circuit board 2 are covered with the resist film 20 for plating. By plating a metal with good solder wettability on 4a, a metal plating layer 10 serving as a surface layer is formed on the second connection terminal 4. Specifically, the metal plating layer 10 is a stacked Ni / Au plating layer with Ni plating as the lower layer plating and Au plating as the upper layer.

  In step E, as shown in FIG. 2F, the plurality of bumps 6 of the semiconductor element 5 are brought into contact with the first connection terminal 3. At this time, as shown in FIG. 2E, in order to supplement the bonding force between the first connection terminal 3 and the semiconductor element 5 by fixing the semiconductor element 5 to the plating resist film 20, as shown in FIG. An adhesive 15 is applied to the surface of the plating resist film 20 that faces the semiconductor element 5. As the adhesive 15, an epoxy adhesive or an amine adhesive (for example, an adhesive such as NAMICS 8436) is used.

  After applying the adhesive 15 which is the previous step of the process E, as shown in FIG. 2F, as the process E, a plurality of bumps 6 are buried in the plating resist film 20 to which the adhesive 15 has been applied. The bump 6 is brought into contact with the first connection terminal 3. Unless the plating resist film 20 covering the first connection terminal 3 is a special resist material having excellent heat resistance, heat of about 300 ° C. is usually applied regardless of thermosetting characteristics such as thermoplasticity and thermosetting. By adding, the plating resist film 20 is softened. Therefore, after the plurality of bumps 6 of the semiconductor element 5 are heated to about 300 ° C., the bumps 6 formed using, for example, Au are deformed by pressing the heated bumps 6 against the plating resist film 20. Instead, the bump 6 is buried in the plating resist film 20.

  In the process E and the next process F of the present embodiment, although not shown, for the mounting work of the semiconductor element 5, a suction jig for mounting the semiconductor element 5 at a predetermined position while suctioning is used. The suction jig has a heating function of applying heat to the sucked semiconductor element 5, and the bump 6 of the semiconductor element 5 is heated to about 300 ° C. using this heating function.

  Although not shown, the bump 6 to be heated is preferably a stud bump having a protrusion formed at its tip. The protrusion degree and the protrusion diameter of the protrusion are determined according to the hardness of the plating resist film 20.

  In step F, as shown in FIG. 2F, the plurality of bumps 6 that are in contact with the first connection terminals 3 in the previous step E are joined. The plurality of bumps 6 are supplied with heat from the suction jig, and the first connecting terminal 3 that is in contact with the bumps 6 has a solder precoat layer 11 as a surface layer. Therefore, by using the heat of the bumps 6, the plurality of bumps 6 are bonded to the first connection terminals 3 by melting the solder precoat layer 11 that is the surface layer of the first connection terminals 3.

  In step G, as shown in FIG. 2G, the lead 8 of the chip component 7 is soldered to the second connection terminal 4 having the metal plating layer 10 using cream solder 12. In this step G, after any one of step D, step E or step F, that is, the solder precoat layer 11 of the first connection terminal 3 is covered with the resist film 20 for plating, If it is performed after the metal plating layer 10 is formed on the connection terminal 4, it may be performed at any time.

  Next, the effect | action of the manufacturing method of the electronic circuit module 1 of this embodiment is demonstrated using FIG. 1 and FIG.

  In the electronic circuit module 1 of the present embodiment, as shown in FIG. 1, a solder precoat layer 11 and a metal plating layer 10 are formed on the same surface 2 a of the circuit board 2. Conventionally, in order to remove the resist film, the resist film has to be formed using a resist material having high chemical reactivity that also reacts with a plating solution used for metal plating. Therefore, when metal plating is applied to the surface 4a of the second connection terminal 4 in a state where a highly chemically reactive resist film is formed on the surface 3a of the first connection terminal 3, the resist film is ionized and melted out. Therefore, the metal plating layer 110 could not be stably formed on the surface 4a of the second connection terminal 4.

  Therefore, in the method for manufacturing the electronic circuit module 1 of the present embodiment, as shown in FIG. 2F, at least the solder precoat layer 11 formed on the surface 3a of the first connection terminal 3 is covered with the resist film 20 for plating. The bumps 6 and the first connection terminals 3 are joined by burying the heated bumps 6 in the plating resist film 20 in this state. Therefore, it is not necessary to remove the plating resist film 20 in order to mount the semiconductor element 5, and therefore a resist material having poor chemical reactivity that does not react with the plating solution used for metal plating is used for the plating resist film 20. be able to. Thereby, the solder precoat layer 11 and the metal plating layer 10 can be mixed and formed on the same surface 2 a of the circuit board 2.

  Further, since the solder precoat layer 11 is formed by depositing a chemical reaction precipitation type solder, the solder precoat layer 11 is formed only on the surface 3 a of the first connection terminal 3 without covering the second connection terminal 4. Can be formed. In particular, with the solder precoat layer 11 of the present embodiment, it is possible to form a thin and high-quality solder precoat layer 11 as is apparent from practical examples of super solder. In addition, by forming the solder precoat layer 11 using lead-free solder that does not contain Pb, the electronic circuit module 1 of the present embodiment can cope with environmental problems.

  Here, in order to soften the plating resist film 20 and melt the solder precoat layer 11 described above, it is necessary to heat the bumps 6. Therefore, in the process E and the process F of this embodiment, the heating function of the suction jig used when the semiconductor element 5 is mounted is used to soften the plating resist film 20 on the plurality of bumps 6 of the semiconductor element 5. Heat for melting the solder precoat layer 11 is supplied from the suction jig. Therefore, the heating process of the bumps 6 can be performed as an extension process of the conventional stacking process of the semiconductor elements 5 without providing the heating process of the bumps 6 as a new independent process using a new machine, instrument or apparatus. .

  Further, since the bump 6 of the semiconductor element 5 is usually formed using Au, if the hardness of the plating resist film 20 is high, the bump 6 is deformed before the bump 6 is buried in the plating resist film 20. . Therefore, in this embodiment, the pressure applied at the time of burying is made high by making the bump 6 into a stud bump. Therefore, even if the plating resist film 20 has a high hardness, the bump 6 can be buried in the plating resist film 20 without being deformed.

  Further, in the present embodiment, since the adhesive 15 is applied to the surface of the plating resist film 20 facing the semiconductor element 5, not only the bonding strength by the solder precoat layer 11 but also the plating resist film 20 is applied. The joining force by the adhesive 15 thus made also contributes to the joining of the semiconductor element 5 and the first connection terminal 3. That is, the semiconductor element 5 can be bonded to the first connection terminal 3 and the plating resist film 20 by using the entire semiconductor element 5 as a bonding portion, instead of using only the bump 6 as a bonding portion. Therefore, even if the bump area 6 of the semiconductor element 5 is a stud bump to reduce the bonding area, the mechanical adhesion between the semiconductor element 5 and the circuit board 2 can be strengthened.

  In this embodiment, the first connection terminal 3 and the second connection terminal 4 are formed using Cu or an alloy containing Cu as a main component. Therefore, the conductivity of the first connection terminal 3 and the second connection terminal 4 can be improved. Further, a metal plating layer 10 having a Ni / Au laminated structure is formed on the surface 4 a of the second connection terminal 4. As for Cu, the compatibility with the Ni lower layer of the metal plating layer 10 is good, and the Au upper layer of the metal plating layer 10 serving as the surface layer of the second connection terminal 4 is soldered with the cream solder 12 containing Sn. Good compatibility with. That is, the metal plating layer 10 with good solder wettability can be formed on the surface of the second connection terminal 4 having good conductivity.

  That is, according to the method for manufacturing the electronic circuit module 1 of the present embodiment, the bumps 6 of the semiconductor element 5 are formed in a state where the plating resist film 20 having poor chemical reactivity is formed on the surface 3 a of the first connection terminal 3. Since the solder precoat layer 11 and the metal plating layer 10 can be formed on the same surface 2 a of the circuit board 2 since the bonding can be performed to the first connection terminal 3, the semiconductor element 5 and the chip component 7 can be bonded. There is an effect that it can be made easy.

  In addition, this invention is not limited to embodiment mentioned above etc., A various change is possible as needed.

A longitudinal sectional view showing an electronic circuit module of the present embodiment The longitudinal cross-sectional view which shows the manufacturing process of the electronic circuit module of this embodiment in order of AG A longitudinal sectional view showing an example of a manufacturing process of a conventional electronic circuit module in the order of AC A longitudinal sectional view showing an example of a manufacturing process of a conventional electronic circuit module in the order of A to D

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electronic circuit module 2 Circuit board 3 1st connection terminal 4 2nd connection terminal 5 Semiconductor element 6 Bump 7 Chip component 8 Lead 10 Metal plating layer 11 Solder precoat layer 12 Cream solder 20 Resist film for plating

Claims (7)

A first connection terminal serving as a terminal for connecting a plurality of bumps formed on a semiconductor element by a flip chip connection method, and a connection portion formed on a chip component other than the bump, wherein the flip chip connection method is used. Forming a second connection terminal to be a terminal for connection by a connection method other than on the same surface of the circuit board;
Forming a solder precoat layer on the surface of the first connection terminal;
By forming a resist film for plating using a resist material that does not chemically react with a plating solution used for forming a metal plating layer on the surface of at least the first connection terminal on which the solder precoat layer is formed, Covering the first connection terminal with the plating resist film on the surface of the circuit board and exposing the second connection terminal without covering with the plating resist film; and
Forming a metal plating layer by plating the surface of the second connection terminal with a metal having good solder wettability in a state where the first connection terminal is covered with the resist film for plating;
After heating the plurality of bumps of the semiconductor element, the heated bumps are pressed against the plating resist film covering the first connection terminals, and the plurality of bumps are applied while softening the plating resist film. A step E of bringing the plurality of bumps into contact with the first connection terminals by being buried in the resist film for plating;
The solder precoat layer, which is a surface layer of the first connection terminal, is melted using heat of the plurality of bumps that are in contact with the first connection terminal, and the plurality of bumps are moved to the first connection terminal. Process F for bonding to
After any one of the step D, the step E or the step F, a step G of soldering the connection part of the chip component to the second connection terminal having the metal plating layer is provided. A method for manufacturing an electronic circuit module, comprising: The method of manufacturing an electronic circuit module according to claim 1, wherein the solder precoat layer is formed by depositing a chemical reaction precipitation type solder on a surface of the first connection terminal. The chemical reaction deposition type solder is a solder alloyed with one element of Pb, Ag or Zn and a solder alloyed with Sn as a main component, or solder alloyed with Sn as a main component using other ionization tendency. 3. The method of manufacturing an electronic circuit module according to claim 2, wherein the electronic circuit module is a free solder. In the step E and the step F, softening of the resist film for plating and melting of the solder precoat are applied to a plurality of bumps of the semiconductor element from an adsorption jig for placing the semiconductor element at a predetermined position while adsorbing the semiconductor element. The method for manufacturing an electronic circuit module according to any one of claims 1 to 3, wherein heat for performing the operation is supplied. The second connection terminal is formed using Cu or an alloy containing Cu as a main component,
5. The electron according to claim 1, wherein the metal plating layer is a stacked Ni / Au plating layer having Ni plating as a lower layer plating and Au plating as an upper layer. Circuit module manufacturing method. After the step D and before the step E, applying an adhesive for fixing the semiconductor element to the plating resist film on the surface of the plating resist film facing the semiconductor element. The method for manufacturing an electronic circuit module according to claim 1, wherein the electronic circuit module is a manufacturing method. The method of manufacturing an electronic circuit module according to claim 1, wherein the bump is a stud bump having a protrusion formed at a tip thereof.

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