JP6175437B2 - 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 - Google Patents
流路部材およびこれを用いた熱交換器ならびに半導体製造装置 Download PDFInfo
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- JP6175437B2 JP6175437B2 JP2014527043A JP2014527043A JP6175437B2 JP 6175437 B2 JP6175437 B2 JP 6175437B2 JP 2014527043 A JP2014527043 A JP 2014527043A JP 2014527043 A JP2014527043 A JP 2014527043A JP 6175437 B2 JP6175437 B2 JP 6175437B2
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- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000012530 fluid Substances 0.000 claims description 18
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 22
- 239000002002 slurry Substances 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 239000007767 bonding agent Substances 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 238000005056 compaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/06—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87153—Plural noncommunicating flow paths
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
離が中央に向かうにつれて変化していることを特徴とする。
1a:第1壁部の主面
2:第2壁部
2a:第2壁部の主面
3:第3壁部
4,4a,4b,4c,4d,4e:流路口
5,6:流路
10,20,30,40,50,60:流路部材
61:ウェハ
62:流入口
63:流出口
64:供給チューブ
65:排出チューブ
100:熱交換器
200:半導体製造装置
Claims (4)
- 第1壁部と、第2壁部と、前記第1壁部と前記第2壁部との間に設けられた第3壁部とを備え、
前記第1壁部と前記第2壁部と前記第3壁部とで構成された内部が、流体が流れる流路としてなり、前記第1壁部から前記第2壁部にわたって切断したときの切断面に、前記流路の流路口が一方方向に並んで複数設けられており、
前記切断面における複数の前記流路口の全てを見たときに、前記流路口は、両端より中央に向かうにつれて漸次前記第1壁部側または前記第2壁部側にずれて配置されており、それぞれの前記流路口における前記第1壁部の主面までの距離および前記第2壁部の主面までの距離が中央に向かうにつれて変化していることを特徴とする流路部材。 - 前記流路を構成する前記第1壁部および前記第2壁部のうち少なくとも一方の中央部が、流路側に向けて湾曲していることを特徴とする請求項1に記載の流路部材。
- 請求項1または請求項2に記載の流路部材の前記第1壁部および前記第2壁部のうち少なくとも一方の表面または内部に金属部材が設けられていることを特徴とする熱交換器。
- 請求項1または請求項2に記載の流路部材の前記第1壁部および前記第2壁部のうち少なくとも一方の内部に金属部材が設けられている熱交換器を備えるとともに、前記金属部材がウェハを吸着するための電極であることを特徴とする半導体製造装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012167200 | 2012-07-27 | ||
JP2012167200 | 2012-07-27 | ||
PCT/JP2013/070524 WO2014017661A1 (ja) | 2012-07-27 | 2013-07-29 | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014017661A1 JPWO2014017661A1 (ja) | 2016-07-11 |
JP6175437B2 true JP6175437B2 (ja) | 2017-08-02 |
Family
ID=49997463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014527043A Active JP6175437B2 (ja) | 2012-07-27 | 2013-07-29 | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150153116A1 (ja) |
EP (1) | EP2879162B1 (ja) |
JP (1) | JP6175437B2 (ja) |
WO (1) | WO2014017661A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10151988B2 (en) | 2014-10-28 | 2018-12-11 | Asml Netherlands B.V. | Component for a lithography tool, a lithography apparatus, an inspection tool and a method of manufacturing a device |
JP6401012B2 (ja) * | 2014-10-28 | 2018-10-03 | 京セラ株式会社 | セラミック基体 |
WO2016143033A1 (ja) * | 2015-03-09 | 2016-09-15 | ギガフォトン株式会社 | 高電圧パルス発生装置 |
JP2017212328A (ja) * | 2016-05-25 | 2017-11-30 | 京セラ株式会社 | セラミック流路部材 |
JP7439239B2 (ja) * | 2020-03-31 | 2024-02-27 | 京セラ株式会社 | 流路部材およびその製造方法 |
EP4050295A1 (en) * | 2021-02-26 | 2022-08-31 | Ovh | Water block having hollow fins |
JP7522089B2 (ja) | 2021-11-10 | 2024-07-24 | 日本碍子株式会社 | ウエハ載置台 |
EP4156251B1 (en) * | 2022-08-30 | 2024-07-03 | Ovh | Cooling block for cooling a heat-generating electronic component and method for manufacturing thereof |
WO2024241516A1 (ja) * | 2023-05-24 | 2024-11-28 | 日本碍子株式会社 | ウエハ載置台 |
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US1296916A (en) * | 1918-02-07 | 1919-03-11 | Charles F Burroughs | Heating or cooling plate for molding-presses. |
US1413571A (en) * | 1920-01-16 | 1922-04-25 | Wilhelm B Bronander | Phonograph-record die holder |
US3369782A (en) * | 1965-10-05 | 1968-02-20 | Navy Usa | Cooled leading edge |
US4489570A (en) * | 1982-12-01 | 1984-12-25 | The Board Of Trustees Of The Leland Stanford Junior University | Fast cooldown miniature refrigerators |
JPS62229947A (ja) * | 1986-03-31 | 1987-10-08 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
GB8627981D0 (en) * | 1986-11-22 | 1986-12-31 | Howard Ind Pipework Services L | Furnace panel |
JPH0284251A (ja) * | 1988-06-10 | 1990-03-26 | Matsushita Seiko Co Ltd | 伝熱管とその製造方法 |
US5111280A (en) * | 1988-11-10 | 1992-05-05 | Iversen Arthur H | Thermal management of power conditioning systems |
US5003376A (en) * | 1989-03-28 | 1991-03-26 | Coriolis Corporation | Cooling of large high power semi-conductors |
JPH11329926A (ja) * | 1998-05-11 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | 基板冷却装置および基板冷却方法 |
JP2000266484A (ja) * | 1999-03-17 | 2000-09-29 | Bosch Automotive Systems Corp | 熱交換器 |
JP4209057B2 (ja) * | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
JP2001165532A (ja) * | 1999-12-09 | 2001-06-22 | Denso Corp | 冷媒凝縮器 |
JP4312339B2 (ja) * | 2000-02-24 | 2009-08-12 | ナブテスコ株式会社 | 蛇行通路付熱伝達装置 |
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KR100382523B1 (ko) * | 2000-12-01 | 2003-05-09 | 엘지전자 주식회사 | 마이크로 멀티채널 열교환기의 튜브 구조 |
JP3945208B2 (ja) * | 2001-10-09 | 2007-07-18 | 株式会社デンソー | 熱交換用チューブ及び熱交換器 |
US20070130769A1 (en) * | 2002-09-03 | 2007-06-14 | Moon Seok H | Micro heat pipe with pligonal cross-section manufactured via extrusion or drawing |
US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
JP4942364B2 (ja) * | 2005-02-24 | 2012-05-30 | 京セラ株式会社 | 静電チャックおよびウェハ保持部材並びにウェハ処理方法 |
DE202005015627U1 (de) * | 2005-09-28 | 2007-02-08 | Autokühler GmbH & Co. KG | Wärmeaustauschernetz und damit ausgerüsteter Wärmeaustauscher |
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JP4826426B2 (ja) | 2006-10-20 | 2011-11-30 | 株式会社デンソー | 半導体装置 |
US20090159253A1 (en) * | 2007-12-21 | 2009-06-25 | Zaiqian Hu | Heat exchanger tubes and combo-coolers including the same |
JP2010143110A (ja) * | 2008-12-19 | 2010-07-01 | Sii Printek Inc | ヘッドチップ、液体噴射ヘッド、及び液体噴射装置 |
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-
2013
- 2013-07-29 JP JP2014527043A patent/JP6175437B2/ja active Active
- 2013-07-29 US US14/415,674 patent/US20150153116A1/en not_active Abandoned
- 2013-07-29 EP EP13822788.9A patent/EP2879162B1/en active Active
- 2013-07-29 WO PCT/JP2013/070524 patent/WO2014017661A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20150153116A1 (en) | 2015-06-04 |
WO2014017661A1 (ja) | 2014-01-30 |
EP2879162A1 (en) | 2015-06-03 |
JPWO2014017661A1 (ja) | 2016-07-11 |
EP2879162B1 (en) | 2020-07-29 |
EP2879162A4 (en) | 2016-03-23 |
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