JP6035615B2 - Power converter - Google Patents

Description

  The present invention relates to a power converter used for converting DC power into AC power or converting AC power into DC power, and more particularly to a power converter used in a hybrid vehicle or an electric vehicle.

  Generally, a power converter includes a smoothing capacitor module that receives DC power from a DC power source, an inverter circuit that receives DC power from the capacitor module and generates AC power, and a control circuit for controlling the inverter circuit. In recent years, there has been a demand for higher output power converters. Particularly in the field of hybrid vehicles and electric vehicles, the driving time and driving conditions (high output torque conditions) using a motor as a driving source tend to increase, and the DC power supplied from the DC power source to the power converter increases. There is a tendency. As the DC power supplied from the DC power supply increases, the amount of heat generated by the capacitor cells and bus bars provided in the capacitor module increases.

  In order to improve the cooling performance of the capacitor module, an example of a power conversion device formed so that a flow path surrounds the side surface of the capacitor module is disclosed in Japanese Patent Laid-Open No. 2009-219270.

  However, further improvement in the cooling performance of the capacitor module is required.

JP 2009-219270 A

  The subject of this invention is improving the cooling performance of the capacitor | condenser module used for a power converter device.

In order to solve the above problems, a power conversion device according to the present invention, a power semiconductor module that converts the direct current to alternating current, and the capacitor module for smoothing the DC current, the capacitor module and the power semiconductor module forming a conductive plate for electrically connecting a flow path forming member for forming a flow path for flowing a cooling medium, and between the second air for housing the capacitor module and between the first air for housing the power semiconductor module and a wall for said wall is connected to the channel member, the conductor plate is thermally connected via the insulating member to the wall.

  Thereby, the conductor plate connected to the capacitor cell in the capacitor module is cooled by the wall connected to the flow path forming body, and the cooling performance of the capacitor module is improved.

  According to the present invention, the cooling performance of the capacitor module can be improved.

1 is a system diagram showing a system of a hybrid vehicle. It is a circuit diagram which shows the structure of the electric circuit shown in FIG. It is a disassembled perspective view for demonstrating the structure of a power converter device. It is the perspective view decomposed | disassembled into the component in order to demonstrate the whole structure of a power converter device. FIG. 5 is a view of the flow path forming body 12 shown in FIG. 4 as viewed from the bottom side in order to explain the flow path forming body 12. FIG. 6A is a perspective view showing the appearance of the power semiconductor module 300a. FIG. 6B is a cross-sectional view of the power semiconductor module 300a. FIG. 7A is a perspective view, and FIG. 7B is a cross-sectional view when viewed from the direction E cut along a cross-section D in the same manner as FIG. 6B. FIG. 7C shows a cross-sectional view before the fins 305 are pressed and the thin portion 304A is deformed. It is a figure which shows the power semiconductor module 300a which removed the module case 304 from the state shown in FIG. FIG. 8A is a perspective view, and FIG. 8B is a cross-sectional view when viewed from the direction E by cutting along the cross-section D in the same manner as FIGS. 6B and 7B. FIG. 9 is a perspective view of a power semiconductor module 300a in which the first sealing resin 348 and the wiring insulating portion 608 are further removed from the state shown in FIG. It is a figure for demonstrating the assembly process of the module primary sealing body 302. FIG. FIG. 11A is a perspective view showing the external appearance of the capacitor module 500. FIG. 11B is an exploded perspective view for explaining the internal structure of the capacitor module 500. It is sectional drawing of the power converter device 200 cut | disconnected by the AA surface of FIG. FIG. 4 is an exploded perspective view of the driver circuit board 22 and the metal base plate 11 with the lid 8 and the control circuit board 20 removed. It is the cross-sectional perspective view cut | disconnected by the surface B of FIG. FIG. 6 is a cross-sectional view taken along a plane C of the flow path forming body 12 shown in FIG. 5. It is a top view of the power converter device 200 from which the lid 8, the control circuit board 20, the metal base plate 11, and the drive circuit board 22 are removed.

  Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a system diagram in which a power conversion device according to the present invention is applied to a so-called hybrid vehicle that travels using both an engine and a motor. The power conversion device according to the present invention can be applied not only to a hybrid vehicle but also to a so-called electric vehicle that runs only by a motor, and also as a power conversion device for driving a motor used in a general industrial machine. It can be used. However, as described above or below, when the power conversion device according to the present invention is applied particularly to the hybrid vehicle or the electric vehicle described above, it has excellent effects from various viewpoints in terms of downsizing or reliability. can get. The power conversion device applied to the hybrid vehicle has substantially the same configuration as the power conversion device applied to the electric vehicle, and the power conversion device applied to the hybrid vehicle will be described as a representative example.

  FIG. 1 is a diagram showing a control block of a hybrid vehicle (hereinafter referred to as “HEV”). Engine EGN, motor generator MG1 and motor generator MG2 generate vehicle running torque. Motor generator MG1 and motor generator MG2 not only generate rotational torque, but also have a function of converting mechanical energy applied from the outside to motor generator MG1 or motor generator MG2 into electric power. The motor generator MG1 or MG2 is, for example, a synchronous machine or an induction machine, and operates as a motor or a generator depending on the operation method as described above.

  The output torque of the engine EGN and the output torque of the motor generator MG2 are transmitted to the motor generator MG1 via the power distribution mechanism TSM, and the rotation torque from the power distribution mechanism TSM or the rotation torque generated by the motor generator MG1 is the transmission TM and differential. It is transmitted to the wheel via the gear DEF. On the other hand, during regenerative braking operation, rotational torque is transmitted from the wheels to motor generator MG1, and AC power is generated based on the supplied rotational torque. The generated AC power is converted into DC power by the power conversion device 200 as described later, and the high-voltage battery 136 is charged. The charged power is used again as travel energy. When the power stored in the high-voltage battery 136 is reduced, the rotational energy generated by the engine EGN is converted into AC power by the motor generator MG2, and then the AC power is converted into DC power by the power converter 200. And the battery 136 can be charged. Transmission of mechanical energy from engine EGN to motor generator MG2 is performed by power distribution mechanism TSM.

  Next, the power conversion device 200 will be described. The inverter circuit 140 and the inverter circuit 142 are electrically connected to each other via a battery 136 and a DC connector 138, and power is exchanged between the battery 136 and the inverter circuit 140 or 142. When motor generator MG1 is operated as a motor, inverter circuit 140 generates AC power based on DC power supplied from battery 136 via DC connector 138, and supplies it to motor generator MG1 via AC connector 188. . The configuration comprising motor generator MG1 and inverter circuit 140 operates as a first motor generator unit. Similarly, when motor generator MG2 is operated as a motor, inverter circuit 142 generates AC power based on the DC power supplied from battery 136 via DC connector 138, and is supplied to motor generator MG2 via AC terminal 159. Supply. The configuration composed of motor generator MG2 and inverter circuit 142 operates as a second motor generator unit. The first motor generator unit and the second motor generator unit may be operated as both motors or generators depending on the operating state, or may be operated using both of them. It is also possible to stop without driving one.

  In the present embodiment, the first motor generator unit is operated as the electric unit by the electric power of the battery 136, so that the vehicle can be driven only by the power of the motor generator MG1. Furthermore, in this embodiment, the battery 136 can be charged by operating the first motor generator unit or the second motor generator unit as a power generation unit and generating power by operating the engine EGN or the power from the wheels.

  The battery 136 is also used as a power source for driving the auxiliary motor 195. The auxiliary motor is, for example, a motor that drives a compressor of an air conditioner or a motor that drives a cooling hydraulic pump. DC power is supplied from the battery 136 to the auxiliary power module 350, AC power is generated by the auxiliary power module 350, and is supplied to the auxiliary motor 195 via the AC terminal 120. The auxiliary power module 350 has basically the same circuit configuration and function as the inverter circuits 140 and 142, and controls the phase, frequency, and power of alternating current supplied to the auxiliary motor 195. Since the capacity of the auxiliary motor 195 is smaller than that of the motor generators MG1 and MG2, the maximum conversion power of the auxiliary power module 350 is smaller than the inverter circuits 140 and 142. The basic configuration and basic operation are substantially the same as those of the inverter circuits 140 and 142. The power conversion device 200 includes a capacitor module 500 for smoothing the DC power supplied to the inverter circuit 140, the inverter circuit 142, and the inverter circuit 350B.

  The power conversion device 200 includes a communication connector 21 for receiving a command from a host control device or transmitting data representing a state to the host control device. Based on the command from the connector 21, the control circuit 172 calculates the control amounts of the motor generator MG1, the motor generator MG2, and the auxiliary motor 195, and further calculates whether to operate as a motor or a generator. Based on the above, a control pulse is generated, and the control pulse is supplied to the driver circuit 174 and the driver circuit 350A of the auxiliary power module 350. The auxiliary power module 350 may have a dedicated control circuit. In this case, the dedicated control circuit generates a control pulse based on a command from the connector 21, and the auxiliary power module 350 driver circuit Supply to 350A.

  Based on the control pulse, the driver circuit 174 generates a drive pulse for controlling the inverter circuit 140 and the inverter circuit 142. The driver circuit 350A generates a control pulse for driving the inverter circuit 350B of the auxiliary power module 350.

  Next, the configuration of the electric circuit of the inverter circuit 140 and the inverter circuit 142 will be described with reference to FIG. Since the circuit configuration of the inverter circuit 350B of the auxiliary power module 350 shown in FIG. 1 is basically similar to the circuit configuration of the inverter circuit 140, the specific circuit configuration of the inverter circuit 350B in FIG. The inverter circuit 140 will be omitted as a representative example. However, since the power module 350 for auxiliary machinery has a small output power, the semiconductor chips constituting the upper arm and lower arm of each phase described below and the circuit for connecting the chips are integrated in the power module 350 for auxiliary machinery. Has been placed.

  Further, since the inverter circuit 140 and the inverter circuit 142 are very similar in circuit configuration and operation, the inverter circuit 140 will be described as a representative.

  In the following, an insulated gate bipolar transistor is used as a semiconductor element, and hereinafter abbreviated as IGBT. The inverter circuit 140 includes a U-phase, a V-phase of AC power to be output from a series circuit 150 of upper and lower arms composed of an IGBT 328 and a diode 156 that operate as an upper arm, and an IGBT 330 and a diode 166 that operate as a lower arm. Corresponding to three phases consisting of W phase.

  In this embodiment, these three phases correspond to the three-phase windings of the armature winding of motor generator MG1. The series circuit 150 of the upper and lower arms of each of the three phases outputs an alternating current from the intermediate electrode 168 that is the middle point portion of the series circuit, and this alternating current is supplied to the motor generator MG1 through the alternating current terminal 159 or the alternating current connector 188. An AC power line is connected to an AC bus bar 802 described below.

  The collector electrode 153 of the IGBT 328 in the upper arm is connected to the capacitor terminal 506 on the positive electrode side of the capacitor module 500 through the positive electrode terminal 157, and the emitter electrode of the IGBT 330 in the lower arm is connected to the capacitor terminal on the negative electrode side of the capacitor module 500 through the negative electrode terminal 158. 504 are electrically connected to each other.

  The IGBT 328 includes a collector electrode 153, a signal emitter electrode 155, and a gate electrode 154. The IGBT 330 includes a collector electrode 163, a signal emitter electrode 165, and a gate electrode 164. A diode 156 is electrically connected between the collector electrode 153 and the emitter electrode. A diode 166 is electrically connected between the collector electrode 163 and the emitter electrode. As the switching power semiconductor element, a metal oxide semiconductor field effect transistor (hereinafter abbreviated as MOSFET) may be used. In this case, the diode 156 and the diode 166 are unnecessary. As a switching power semiconductor element, IGBT is suitable when the DC voltage is relatively high, and MOSFET is suitable when the DC voltage is relatively low.

  The capacitor module 500 includes a plurality of positive-side capacitor terminals 506, a plurality of negative-side capacitor terminals 504, a battery positive-side terminal 509, and a battery negative-side terminal 508. The high-voltage DC power from the battery 136 is supplied to the battery positive terminal 509 and the battery negative terminal 508 via the DC connector 138, and the plurality of positive capacitor terminals 506 and the plurality of negative terminals of the capacitor module 500. From the capacitor terminal 504 to the inverter circuit 140, the inverter circuit 142, and the auxiliary power module 350. On the other hand, the DC power converted from the AC power by the inverter circuit 140 and the inverter circuit 142 is supplied to the capacitor module 500 from the positive capacitor terminal 506 and the negative capacitor terminal 504, and is connected to the battery positive terminal 509 and the battery negative terminal. 508 is supplied to the battery 136 via the DC connector 138 and stored in the battery 136.

  The control circuit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the IGBT 328 and the IGBT 330. As input information to the microcomputer, there are a target torque value required for the motor generator MG1, a current value supplied to the motor generator MG1 from the series circuit 150 of the upper and lower arms, and a magnetic pole position of the rotor of the motor generator MG1. The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on a detection signal from the current sensor 180. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) such as a resolver provided in the motor generator MG1. In this embodiment, the current sensor 180 detects the current value of three phases, but the current value for two phases may be detected and the current for three phases may be obtained by calculation. .

  FIG. 3 shows an exploded perspective view of a power conversion device 200 as an embodiment according to the present invention. The power conversion device 200 includes a flow path forming body 12 that functions as a case for housing power semiconductor modules 300a to 300c and power semiconductor modules 301a to 301c and a capacitor module 500, which will be described later, and forms a flow path, and a lid 8. . In addition, a case body may be provided separately from the flow path forming body 12 of the present embodiment, and the flow path forming body 12 may be housed in the case.

  The lid 8 accommodates circuit components constituting the power conversion device 200 and is fixed to the flow path forming body 12. A control circuit board 20 on which a control circuit 172 is mounted is disposed on the inside of the lid 8. A first opening 202, a third opening 204 a, a fourth opening 204 b, and a fifth opening 205 are provided on the upper surface of the lid 8. Further, a second opening 203 is provided on the side wall of the lid 8.

  The connector 21 is provided on the control circuit board 20 and protrudes to the outside through the first opening 202. The negative power line 510 and the positive power line 512 electrically connect the DC connector 138 and the capacitor module 500 and the like, and protrude to the outside through the second opening 203.

  The AC side relay conductors 802a to 802c are connected to the power semiconductor modules 300a to 300c and protrude to the outside through the third opening 204a. The AC side relay conductors 802d to 802f are connected to the power semiconductor modules 301a to 301c and project outside through the fourth opening 204b. The AC output terminal of the auxiliary power module 350 (not shown) protrudes to the outside through the fifth opening 205.

  The orientation of the mating surfaces of the terminals of the connector 21 and the like varies depending on the vehicle model. However, particularly when mounting on a small vehicle, the mating surface is selected from the viewpoint of the size restriction in the engine room and the assemblability. It is preferable to make it upward. For example, when the power conversion device 200 is disposed above the transmission TM, the workability is improved by projecting toward the opposite side of the transmission TM.

  FIG. 4 is an exploded overall perspective view for helping understanding of the configuration housed in the flow path forming body 12 of the power conversion device 200.

  The flow path forming body 12 forms openings 400a to 400c and openings 402a to 402c connected to the flow path through which the cooling refrigerant flows. The openings 400a to 400c are closed by the inserted power semiconductor modules 300a to 300c, and the openings 402d to 402f are closed by the inserted power semiconductor modules 301a to 301c.

  In the flow path forming body 12, a storage space 405 for storing the capacitor module 500 is formed in a side portion of a space in which the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c are stored.

  In the capacitor module 500, since the distances between the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c are substantially constant, the circuit constants of the smoothing capacitor and the power semiconductor module circuit are easily balanced in each of the three phases. Thus, the circuit configuration can easily reduce the spike voltage.

  By making the main structure of the flow path of the flow path forming body 12 by casting an aluminum material integrally with the flow path forming body 12, the flow path can increase the mechanical strength in addition to the cooling effect. Moreover, by making it by aluminum casting, the flow path forming body 12 and the flow path have an integral structure, heat conduction is improved, and cooling efficiency is improved. In addition, the flow path is completed by fixing the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c to the flow path, and a water leak test is performed on the water channel. When the water leakage test is passed, the work of attaching the capacitor module 500, the auxiliary power module 350, and the substrate can be performed next. As described above, the flow path forming body 12 is disposed at the bottom of the power conversion device 200, and then the work of fixing necessary components such as the capacitor module 500, the auxiliary power module 350, and the substrate can be sequentially performed from the top. Constructed, productivity and reliability are improved.

  The driver circuit board 22 is disposed above the power semiconductor modules 300 a to 300 c and the power semiconductor modules 301 a to 301 c and the capacitor module 500. A metal base plate 11 is disposed between the driver circuit board 22 and the control circuit board 20. The metal base plate 11 functions as an electromagnetic shield for a circuit group mounted on the driver circuit board 22 and the control circuit board 20, and also releases and cools heat generated by the driver circuit board 22 and the control circuit board 20. Have.

  Further, it acts to increase the mechanical resonance frequency of the control circuit board 20. That is, it becomes possible to dispose screwing portions for fixing the control circuit board 20 to the metal base plate 11 at short intervals, shorten the distance between the support points when mechanical vibration occurs, and reduce the resonance frequency. Can be high. For example, since the resonance frequency of the control circuit board 20 can be increased with respect to the vibration frequency transmitted from the transmission, it is difficult to be affected by vibration and the reliability is improved.

  FIG. 5 is an explanatory diagram for explaining the flow path forming body 12, and is a view of the flow path forming body 12 shown in FIG. 4 as viewed from below.

  The flow path forming body 12 is provided with an inlet pipe 13 and an outlet pipe 14 on one side wall 12a. The cooling refrigerant flows in the direction of the flow direction 417 indicated by the dotted line, and flows through the first flow path portion 19 a formed along one side of the flow path forming body 12 through the inlet pipe 13. The second flow path portion 19b is connected to the first flow path portion 19a via the folded flow path portion, and is formed in parallel with the first flow path portion 19a. The third flow path portion 19c is connected to the second flow path portion 19b through the folded flow path portion, and is formed in parallel with the second flow path portion 19b. The fourth flow path portion 19d is connected to the third flow path portion 19c via the folded flow path portion, and is formed in parallel with the third flow path portion 19c. The fifth flow path portion 19e is connected to the fourth flow path portion 19d through the folded flow path portion, and is formed in parallel with the fourth flow path portion 19d. The sixth flow path portion 19f is connected to the fifth flow path portion 19e via the folded flow path portion, and is formed in parallel with the fifth flow path portion 19e. That is, the first flow path portion 19a to the sixth flow path portion 19f form a meandering flow path connected to one.

  The first flow path forming body 441 includes a first flow path section 19a, a second flow path section 19b, a third flow path section 19c, a fourth flow path section 19d, a fifth flow path section 19e, and a sixth flow path section 19f. Form. The first channel portion 19a, the second channel portion 19b, the third channel portion 19c, the fourth channel portion 19d, the fifth channel portion 19e, and the sixth channel portion 19f are all deeper than the width direction. The direction is formed large.

  The seventh flow path portion 19g is connected to the sixth flow path portion 19f and is formed at a position facing the storage space 405 of the capacitor module 500 shown in FIG. The second flow path forming body 442 forms the seventh flow path portion 19g. The seventh flow path portion 19g is formed so that the width direction is larger than the depth direction.

  The eighth flow path portion 19h is connected to the seventh flow path portion 19g and is formed at a position facing an auxiliary power module 350 described later. Further, the eighth flow path portion 19h is connected to the outlet pipe 14. The third flow path forming body 444 forms the eighth flow path portion 19h. The eighth flow path portion 19h is formed so that the depth direction is larger than the width direction.

  An opening 404 connected to one is formed on the lower surface of the flow path forming body 12. The opening 404 is closed by the lower cover 420. A seal member 409 is provided between the lower cover 420 and the flow path forming body 12 to maintain airtightness.

  Further, the lower cover 420 is formed with convex portions 406 a to 406 f that protrude in a direction away from the flow path forming body 12. The convex portions 406a to 406f are provided corresponding to the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c. That is, the convex portion 406a is formed to face the first flow path portion 19a. The convex part 406b is formed to face the second flow path part 19b. The convex part 406c is formed to face the third flow path part 19c. The convex portion 406d is formed to face the fourth flow path portion 19d. The convex part 406e is formed to face the fifth flow path part 19e. The convex portion 406f is formed to face the sixth flow path portion 19f.

  The depth and width of the seventh flow path portion 19g vary greatly from the depth and width of the sixth flow path portion 19f. The second flow path forming body 442 is preferably provided with straight fins 447 projecting from the seventh flow path portion 19g so that the flow medium can be rectified and the flow rate can be controlled by changing the large flow path shape.

  Similarly, the depth and width of the eighth flow path portion 19h vary greatly from the depth and width of the seventh flow path portion 19g. The third flow path forming body 444 is preferably provided with straight fins 448 protruding into the eighth flow path portion 19h so that the flow medium can be rectified and the flow rate can be controlled by changing the large flow path shape.

  A detailed configuration of the power semiconductor modules 300a to 300c used in the inverter circuit 140 will be described with reference to FIGS. The power semiconductor modules 300a to 300c have the same structure, and the structure of the power semiconductor module 300a will be described as a representative. 6 to 10, the signal terminal 325U corresponds to the gate electrode 154 and the signal emitter electrode 155 disclosed in FIG. 2, and the signal terminal 325L corresponds to the gate electrode 164 and the emitter electrode 165 disclosed in FIG. To do. The DC positive terminal 315B is the same as the positive terminal 157 disclosed in FIG. 2, and the DC negative terminal 319B is the same as the negative terminal 158 disclosed in FIG. The AC terminal 320B is the same as the AC terminal 159 disclosed in FIG.

  FIG. 6A is a perspective view of the power semiconductor module 300a of the present embodiment. FIG. 6B is a cross-sectional view of the power semiconductor module 300a according to the present embodiment cut along a cross section D and viewed from the direction E.

  FIG. 7 is a diagram showing a power semiconductor module 300a in which the screw 309 and the second sealing resin 351 are removed from the state shown in FIG. FIG. 7A is a perspective view, and FIG. 7B is a cross-sectional view when viewed from the direction E cut along a cross-section D in the same manner as FIG. 6B. FIG. 7C shows a cross-sectional view before the fins 305 are pressed and the thin portion 304A is deformed.

  FIG. 8 is a diagram showing a power semiconductor module 300a in which the module case 304 is further removed from the state shown in FIG. FIG. 8A is a perspective view, and FIG. 8B is a cross-sectional view when viewed from the direction E by cutting along the cross-section D in the same manner as FIGS. 6B and 7B.

  FIG. 9 is a perspective view of the power semiconductor module 300a in which the first sealing resin 348 and the wiring insulating portion 608 are further removed from the state shown in FIG.

  FIG. 10 is a view for explaining an assembly process of the module primary sealing body 302. As shown in FIGS. 8 and 9, the power semiconductor elements (IGBT 328, IGBT 330, diode 156, and diode 166) constituting the series circuit 150 of the upper and lower arms are connected by the conductive plate 315 or the conductive plate 318, or the conductive plate 320 or the conductive plate. By 319, it is fixed by being sandwiched from both sides. The conductor plate 315 and the like are sealed with the first sealing resin 348 with the heat dissipation surface exposed, and the insulating member 333 is thermocompression bonded to the heat dissipation surface. As shown in FIG. 8, the first sealing resin 348 has a polyhedral shape (here, a substantially rectangular parallelepiped shape).

  The module primary sealing body 302 sealed with the first sealing resin 348 is inserted into the module case 304 and sandwiched between the insulating members 333, and is thermocompression bonded to the inner surface of the module case 304 that is a CAN type cooler. The Here, the CAN-type cooler is a cylindrical cooler having an insertion port 306 on one surface and a bottom on the other surface. The space remaining inside the module case 304 is filled with the second sealing resin 351.

  The module case 304 is made of an electrically conductive member, for example, an aluminum alloy material (Al, AlSi, AlSiC, Al—C, etc.). The insertion port 306 is surrounded by the flange 304B. Further, as shown in FIG. 6 (a), the first heat radiating surface 307A and the second heat radiating surface 307B, which are wider than the other surfaces, are arranged facing each other so as to face these heat radiating surfaces. Each power semiconductor element (IGBT 328, IGBT 330, diode 156, diode 166) is arranged.

  The three surfaces that connect the first heat radiation surface 307A and the second heat radiation surface 307B that face each other constitute a surface that is sealed with a narrower width than the first heat radiation surface 307A and the second heat radiation surface 307B, and the other one side surface An insertion port 306 is formed at the bottom. The shape of the module case 304 does not need to be an accurate rectangular parallelepiped, and the corner may form a curved surface as shown in FIG.

  By using the metal case having such a shape, even when the module case 304 is inserted into a flow path through which a coolant such as water or oil flows, a seal against the coolant can be secured by the flange 304B. Intrusion into the module case 304 can be prevented with a simple configuration. Further, the fins 305 are uniformly formed on the first heat radiation surface 307A and the second heat radiation surface 307B facing each other. Furthermore, a thin portion 304A having an extremely thin thickness is formed on the outer periphery of the first heat radiating surface 307A and the second heat radiating surface 307B. Since the thin portion 304A is extremely thin to such an extent that it can be easily deformed by pressurizing the fin 305, the productivity after the module primary sealing body 302 is inserted is improved.

  As described above, the gap between the conductor plate 315 and the inner wall of the module case 304 can be reduced by thermocompression bonding of the conductor plate 315 and the like to the inner wall of the module case 304 via the insulating member 333, and the power semiconductor The generated heat of the element can be efficiently transmitted to the fin 305. Further, by providing the insulating member 333 with a certain degree of thickness and flexibility, the generation of thermal stress can be absorbed by the insulating member 333, which is favorable for use in a power conversion device for a vehicle having a large temperature change. .

  Outside the module case 304, a metal DC positive electrode wiring 315A and a DC negative electrode wiring 319A for electrical connection with the capacitor module 500 are provided, and a DC positive electrode terminal 315B and a DC negative electrode terminal 319B are provided at the tips thereof. Are formed respectively. Further, a metal AC wiring 320A for supplying AC power to motor generator MG1 or MG2 is provided, and an AC terminal 320B is formed at the tip thereof. In the present embodiment, as shown in FIG. 9, the DC positive wiring 315A is connected to the conductor plate 315, the DC negative wiring 319A is connected to the conductor plate 319, and the AC wiring 320A is connected to the conductor plate 320.

  In addition to the module case 304, metal signal wirings 324U and 324L are provided for electrical connection with the driver circuit 174, and a signal terminal 325U and a signal terminal 325L are formed at the front ends thereof. Yes. In the present embodiment, as shown in FIG. 9, the signal wiring 324U is connected to the IGBT 328, and the signal wiring 324L is connected to the IGBT 330.

  The DC positive electrode wiring 315A, the DC negative electrode wiring 319A, the AC wiring 320A, the signal wiring 324U, and the signal wiring 324L are integrally molded as the auxiliary mold body 600 in a state where they are insulated from each other by the wiring insulating portion 608 formed of a resin material. Is done. The wiring insulating portion 608 also acts as a support member for supporting each wiring, and a thermosetting resin or a thermoplastic resin having an insulating property is suitable for the resin material used therefor. Thereby, it is possible to secure insulation between the DC positive electrode wiring 315A, the DC negative electrode wiring 319A, the AC wiring 320A, the signal wiring 324U, and the signal wiring 324L, and high-density wiring is possible.

  The auxiliary mold body 600 is fixed to the module case 304 with a screw 309 that passes through a screw hole provided in the wiring insulating portion 608 after being metal-bonded to the module primary sealing body 302 at the connection portion 370. For example, TIG welding or the like can be used for metal bonding between the module primary sealing body 302 and the auxiliary mold body 600 in the connection portion 370.

  The direct current positive electrode wiring 315A and the direct current negative electrode wiring 319A are stacked on each other in a state of facing each other with the wiring insulating portion 608 interposed therebetween, and have a shape extending substantially in parallel. With such an arrangement and shape, the current that instantaneously flows during the switching operation of the power semiconductor element flows oppositely and in the opposite direction. As a result, the magnetic fields produced by the currents cancel each other out, and this action can reduce the inductance. The AC wiring 320A and the signal terminals 325U and 325L also extend in the same direction as the DC positive electrode wiring 315A and the DC negative electrode wiring 319A.

  The connection portion 370 where the module primary sealing body 302 and the auxiliary mold body 600 are connected by metal bonding is sealed in the module case 304 by the second sealing resin 351. Thereby, since a necessary insulation distance can be stably ensured between the connection part 370 and the module case 304, the power semiconductor module 300a can be reduced in size as compared with the case where sealing is not performed.

  As shown in FIG. 9, the auxiliary module side DC positive electrode connection terminal 315 </ b> C, the auxiliary module side DC negative electrode connection terminal 319 </ b> C, the auxiliary module side AC connection terminal 320 </ b> C, and the auxiliary module side signal are provided on the auxiliary mold body 600 side of the connection portion 370. The connection terminal 326U and the auxiliary module side signal connection terminal 326L are arranged in a line. On the other hand, on the module primary sealing body 302 side of the connecting portion 370, along one surface of the first sealing resin 348 having a polyhedral shape, an element side DC positive electrode connection terminal 315D, an element side DC negative electrode connection terminal 319D, The element side AC connection terminal 320D, the element side signal connection terminal 327U, and the element side signal connection terminal 327L are arranged in a line. Thus, the structure in which the terminals are arranged in a row in the connection portion 370 facilitates the manufacture of the module primary sealing body 302 by transfer molding.

  Here, the positional relationship of each terminal when the part extending outward from the first sealing resin 348 of the module primary sealing body 302 is viewed as one terminal for each type will be described. In the following description, a terminal constituted by the DC positive electrode wiring 315A (including the DC positive electrode terminal 315B and the auxiliary module side DC positive electrode connection terminal 315C) and the element side DC positive electrode connection terminal 315D is referred to as a positive electrode side terminal. A terminal constituted by a DC negative electrode terminal 319B (including an auxiliary module side DC negative electrode connection terminal 319C) and an element side DC positive electrode connection terminal 315D is referred to as a negative electrode side terminal, and AC wiring 320A (AC terminal 320B and auxiliary module side AC connection) The terminal composed of the terminal 320C and the element side AC connection terminal 320D is referred to as an output terminal, and is composed of the signal wiring 324U (including the signal terminal 325U and the auxiliary module side signal connection terminal 326U) and the element side signal connection terminal 327U. Is called the upper arm signal terminal. It refers to a line 324L (including signal terminals 325L and the auxiliary module-side signal connecting terminals 326L) and the terminal constituted by the element-side signal connecting terminals 327L and the signal terminal for the lower arm.

  Each of the terminals protrudes from the first sealing resin 348 and the second sealing resin 351 through the connection portion 370, and each protruding portion from the first sealing resin 348 (element side DC positive electrode connection terminal 315D). , Element side DC negative connection terminal 319D, element side AC connection terminal 320D, element side signal connection terminal 327U and element side signal connection terminal 327L) are one surface of the first sealing resin 348 having a polyhedral shape as described above. Are lined up in a row. Further, the positive terminal and the negative terminal protrude from the second sealing resin 351 in a stacked state and extend outside the module case 304. With such a configuration, the power semiconductor element and the terminal are connected at the time of mold clamping when the module primary sealing body 302 is manufactured by sealing the power semiconductor element with the first sealing resin 348. It is possible to prevent an excessive stress on the portion and a gap in the mold from occurring. Further, since the magnetic fluxes in the directions canceling each other are generated by the currents in the opposite directions flowing through each of the stacked positive electrode side terminals and negative electrode side terminals, the inductance can be reduced.

  On the auxiliary mold body 600 side, the auxiliary module side DC positive electrode connection terminal 315C and the auxiliary module side DC negative electrode connection terminal 319C are connected to the DC positive electrode terminal 315B and the DC positive electrode wiring 315A and the DC negative electrode wiring 319A opposite to the DC negative electrode terminal 319B. Each is formed at the tip. Further, the auxiliary module side AC connection terminal 320C is formed at the tip of the AC wiring 320A opposite to the AC terminal 320B. The auxiliary module side signal connection terminals 326U and 326L are formed at the distal ends of the signal wirings 324U and 324L opposite to the signal terminals 325U and 325L, respectively.

  On the other hand, on the module primary sealing body 302 side, the element side DC positive connection terminal 315D, the element side DC negative connection terminal 319D, and the element side AC connection terminal 320D are formed on the conductor plates 315, 319, and 320, respectively. The element side signal connection terminals 327U and 327L are connected to the IGBTs 328 and 330 by bonding wires 371, respectively.

  As shown in FIG. 10, the DC positive side conductor plate 315 and the AC output side conductor plate 320 and the element side signal connection terminals 327 </ b> U and 327 </ b> L are connected to a common tie bar 372 and are substantially the same. It is integrally processed so as to have a planar arrangement. To the conductor plate 315, the collector electrode of the IGBT 328 on the upper arm side and the cathode electrode of the diode 156 on the upper arm side are fixed. The conductor plate 320 is fixedly attached with a collector electrode of the IGBT 330 on the lower arm side and a cathode electrode of the diode 166 on the lower arm side. On the IGBTs 328 and 330 and the diodes 156 and 166, a conductor plate 318 and a conductor plate 319 are arranged in substantially the same plane. To the conductor plate 318, the emitter electrode of the IGBT 328 on the upper arm side and the anode electrode of the diode 156 on the upper arm side are fixed. On the conductor plate 319, an emitter electrode of the IGBT 330 on the lower arm side and an anode electrode of the diode 166 on the lower arm side are fixed. Each power semiconductor element is fixed to an element fixing portion 322 provided on each conductor plate via a metal bonding material 160. The metal bonding material 160 is, for example, a low-temperature sintered bonding material including a solder material, a silver sheet, and fine metal particles.

  Each power semiconductor element has a flat plate-like structure, and each electrode of the power semiconductor element is formed on the front and back surfaces. As shown in FIG. 10, each electrode of the power semiconductor element is sandwiched between a conductor plate 315 and a conductor plate 318, or a conductor plate 320 and a conductor plate 319. In other words, the conductor plate 315 and the conductor plate 318 are stacked so as to face each other substantially in parallel via the IGBT 328 and the diode 156. Similarly, the conductor plate 320 and the conductor plate 319 have a stacked arrangement facing each other substantially in parallel via the IGBT 330 and the diode 166. In addition, the conductor plate 320 and the conductor plate 318 are connected via an intermediate electrode 329. By this connection, the upper arm circuit and the lower arm circuit are electrically connected to form an upper and lower arm series circuit. As described above, the IGBT 328 and the diode 156 are sandwiched between the conductor plate 315 and the conductor plate 318, and the IGBT 330 and the diode 166 are sandwiched between the conductor plate 320 and the conductor plate 319, so that the conductor plate 320 and the conductor plate 318 are connected to the intermediate electrode. Connect via H.329. Thereafter, the control electrode 328A of the IGBT 328 and the element side signal connection terminal 327U are connected by the bonding wire 371, and the control electrode 330A of the IGBT 330 and the element side signal connection terminal 327L are connected by the bonding wire 371.

  FIG. 11A is a perspective view showing the external appearance of the capacitor module 500. FIG. 11B is an exploded perspective view for explaining the internal structure of the capacitor module 500. The laminated conductor plate 501 is composed of a negative electrode conductor plate 505 and a positive electrode conductor plate 507 formed of a plate-like wide conductor, and an insulating sheet 550 sandwiched between the negative electrode conductor plate 505 and the positive electrode conductor plate 507. Since the laminated conductor plate 501 cancels out the magnetic flux with respect to the current flowing through the series circuit 150 of the upper and lower arms of each phase, the inductance of the current flowing through the series circuit 150 of the upper and lower arms is reduced.

  The battery negative electrode side terminal 508 and the battery positive electrode side terminal 509 are formed in a state where they are raised from one side of the laminated conductor plate 501 in the longitudinal direction, and are connected to the positive electrode conductor plate 507 and the negative electrode conductor plate 505, respectively. The auxiliary capacitor terminals 516 and 517 are formed in a state where they are raised from one side of the laminated conductor plate 501 in the longitudinal direction, and are connected to the positive conductor plate 507 and the negative conductor plate 505, respectively.

  The relay conductor portion 530 is formed in a state of being raised from one side in the longitudinal direction of the multilayer conductor plate 501. The capacitor terminals 503a to 503c protrude from the end of the relay conductor portion 530, and are formed corresponding to the power semiconductor modules 300a to 300c. The capacitor terminals 503d to 503f also protrude from the end of the relay conductor portion 530, and are formed corresponding to the power semiconductor modules 301a to 301c. Each of the relay conductor 530 and the capacitor terminals 503a to 503c is configured by a laminated state in which the insulating sheet 550 is sandwiched, and the inductance is reduced with respect to the current flowing through the series circuit 150 of the upper and lower arms. Further, the relay conductor portion 530 is configured such that no through hole or the like that prevents the flow of current is formed at all or as few as possible.

  With such a configuration, a reflux current generated during switching between the power semiconductor modules 300a to 300c provided for each phase is likely to flow to the relay conductor portion 530, and is difficult to flow to the laminated conductor plate 501 side. Therefore, heat generation of the laminated conductor plate 501 due to the reflux current can be reduced.

  In the present embodiment, the negative electrode conductor plate 505, the positive electrode conductor plate 507, the battery negative electrode side terminal 508, the battery positive electrode side terminal 509, the relay conductor portion 530, and the capacitor terminals 503a to 503f are integrally formed metal plates. And has the effect of reducing the inductance with respect to the current flowing through the series circuit 150 of the upper and lower arms.

  A plurality of capacitor cells 514 are provided below the laminated conductor plate 501. In the present embodiment, three capacitor cells 514 are arranged in a line along one side in the longitudinal direction of the laminated conductor plate 501, and another three capacitor cells 514 are arranged in the other side in the longitudinal direction of the laminated conductor plate 501. A total of six capacitor cells are provided along one side.

  The capacitor cells 514 arranged along the respective sides in the longitudinal direction of the multilayer conductor plate 501 are arranged symmetrically with respect to the dotted line AA shown in FIG. Thereby, when the direct current smoothed by the capacitor cell 514 is supplied to the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c, the current balance between the capacitor terminals 503a to 503c and the capacitor terminals 503d to 503f And the inductance of the laminated conductor plate 501 can be reduced. Moreover, since it can prevent that an electric current flows locally in the laminated conductor board 501, a heat balance can be equalized and heat resistance can also be improved.

  Capacitor cell 514 is a unit structure of a power storage unit of capacitor module 500, and is a film in which two films each having a metal such as aluminum deposited thereon are stacked and wound so that each of the two metals serves as a positive electrode and a negative electrode. Use a capacitor. The electrode of the capacitor cell 514 is manufactured by spraying a conductor such as tin, with the wound shaft surfaces serving as a positive electrode and a negative electrode, respectively.

  The capacitor case 502 includes a storage portion 511 for storing the capacitor cell 514, and the storage portion 511 has a substantially rectangular upper surface and lower surface. The capacitor case 502 is provided with fixing means for fixing the capacitor module 500 to the flow path forming body 12, for example, holes 520a to 520d for allowing a screw to pass therethrough. The capacitor case 502 of this embodiment is made of a highly heat conductive resin in order to improve the heat conductivity, but may be made of metal or the like.

  Further, after the multilayer conductor plate 501 and the capacitor cell 514 are accommodated in the capacitor case 502, the multilayer conductor plate 501 is covered except for the capacitor terminals 503a to 503f, the battery negative electrode side terminal 508 and the battery positive electrode side terminal 509. The capacitor case 502 is filled with a filler 551.

  Further, the capacitor cell 514 generates heat due to a ripple current at the time of switching due to an electric resistance of a metal thin film and an internal conductor deposited on the internal film. Therefore, in order to easily release the heat of the capacitor cell 514 through the capacitor case 502, the capacitor cell 514 is molded with a filler.

  Furthermore, the moisture resistance of the capacitor cell 514 can be improved by using a resin filler.

  In the present embodiment, the seventh flow path portion 19g is provided along the longitudinal direction of the storage portion 511 of the capacitor module 500 (see FIG. 5), and the cooling efficiency is improved.

  The noise filter capacitor cell 515a is connected to the positive electrode conductor plate 507 and removes predetermined noise generated between the positive electrode and the ground. The noise filter capacitor cell 515b is connected to the negative electrode conductor plate 505, and removes predetermined noise generated between the negative electrode and the ground. The noise filter capacitor cells 515a and 515b are set to have a smaller capacity than the capacitor cell 514. The noise filter capacitor cells 515a and 515b are disposed closer to the battery negative electrode side terminal 508 and the battery positive electrode side terminal 509 than the capacitor terminals 503a to 503f. Thereby, the predetermined noise mixed in the battery negative terminal 508 and the battery positive terminal 509 can be removed at an early stage, and the influence of noise on the power semiconductor module can be reduced.

  FIG. 12 is a cross-sectional view of the power conversion device 200 cut along the AA plane in FIG. 3. The power semiconductor module 300b is accommodated in the second flow path portion 19b shown in FIG. The outer wall of the module case 304 is in direct contact with the cooling refrigerant flowing in the second flow path portion 19b. The other power semiconductor modules 300a and 300c and the power semiconductor modules 301a to 301c are also housed in the respective flow path portions, similarly to the power semiconductor module 300b.

  The power semiconductor module 300b is disposed on the side of the capacitor module 500. The height 540 of the capacitor module is formed smaller than the height 360 of the power semiconductor module. Here, the height 540 of the capacitor module is the height from the bottom surface 513 of the capacitor case 502 to the capacitor terminal 503b, and the height 360 of the power semiconductor module is from the bottom surface of the module case 304 to the tip of the signal terminal 325U. It is height.

  The second flow path forming body 442 is provided with a seventh flow path portion 19g disposed at the lower part of the capacitor module 500. That is, the seventh flow path portion 19g is arranged side by side with the capacitor module 500 along the height direction of the power semiconductor module 300b. The height 443 of the seventh flow path portion is smaller than the difference between the height 360 of the power semiconductor module and the height 540 of the capacitor module. Note that the height 443 of the seventh flow path portion may be the same as the difference between the height 360 of the power semiconductor module and the height 540 of the capacitor module.

  Since the power semiconductor module 300b and the capacitor module 500 are adjacent to each other, the connection distance is shortened, so that low inductance and low loss can be achieved.

  On the other hand, since the power semiconductor module 300b and the capacitor module 500 can be fixed and connected on the same surface, the assemblability can be improved.

  On the other hand, since the height of the capacitor module 540 is kept lower than the height 360 of the power semiconductor module, the seventh flow path portion 19g can be disposed below the capacitor module 500. Cooling is also possible. Moreover, since the height of the upper part of the capacitor module 500 and the upper part of the power semiconductor module 300b is a short distance, it is possible to suppress the capacitor terminal 503b from becoming longer in the height direction of the capacitor module 500.

  On the other hand, by disposing the seventh flow path portion 19g below the capacitor module 500, it is possible to avoid the cooling flow path from being arranged on the side of the capacitor module 500 and bring the capacitor module 500 and the power semiconductor module 300b closer to each other. Thus, it is possible to suppress an increase in the wiring distance between the capacitor module 500 and the power semiconductor module 300b.

  The driver circuit board 22 is mounted with a transformer 24 that generates drive power for the driver circuit. The height of the transformer 24 is formed larger than the height of the circuit components mounted on the driver circuit board 22. In the space between the driver circuit board 22 and the power semiconductor modules 301a to 301c, the signal terminal 325U and the DC positive terminal 315B are arranged. On the other hand, a transformer 24 is disposed in the space between the driver circuit board 22 and the capacitor module 500. Thereby, the space between the driver circuit board 22 and the capacitor module 500 can be effectively used. Further, the distance between the driver circuit board 22 and the metal base plate 11 can be suppressed by mounting circuit components having the same height on the surface of the driver circuit board 22 opposite to the surface on which the transformer 24 is disposed. Can do.

  FIG. 13 is an exploded perspective view of the driver circuit board 22 and the metal base plate 11 with the lid 8 and the control circuit board 20 removed.

  The driver circuit board 22 is disposed on the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c. The metal base plate 11 is disposed on the opposite side of the power semiconductor modules 300a to 300c and the power semiconductor modules 301a to 301c with the driver circuit board 22 interposed therebetween.

  The driver circuit board 22 has a through hole 22a that penetrates the AC side relay conductor 802a, a through hole 22b that penetrates the AC side relay conductor 802b, a through hole 22c that penetrates the AC side relay conductor 802c, and an AC side relay conductor 802d. A through hole 22d that penetrates the AC side relay conductor 802e and a through hole 22f that penetrates the AC side relay conductor 802f are formed. In this embodiment, the current sensor 180a is fitted in the through hole 22a, the current sensor 180c is fitted in the through hole 22c, the current sensor 180d is fitted in the through hole 22d, and the current sensor 180f is penetrated. It is fitted in the hole 22f. However, you may provide a current sensor with respect to all the through-holes 22a-22f.

  By providing the through holes 22a to 22f in the driver circuit board 22, the current sensor can be arranged directly on the driver circuit board 22, the wiring of the AC side relay conductors 802a to 802f can be simplified, and the size can be reduced.

  In the metal base plate 11, a through hole 11a is formed at a position facing the through holes 22a to 22c, and a through hole 11b is formed at a position facing the through holes 22d to 22f. As shown in FIG. 3, the lid 8 forms a third opening 204 a at a position facing the through hole 11 a to form an AC connector 188. Further, the lid 8 forms a fourth opening 204b at a position facing the through hole 11b to form an AC connector 159.

  Thereby, even when the driver circuit board 22 is disposed between the AC connector 188 and the power semiconductor modules 301a to 301c, the wiring of the AC side relay conductors 802a to 802f is prevented from being complicated, and the power converter 200 Can be miniaturized.

  Each of the power semiconductor modules 300a to 300c and 301a to 301c has a short shape having a side in the longitudinal direction and a side in the lateral direction. Similarly, the capacitor module 500 has a short shape having a long side and a short side. The power semiconductor modules 300 a to 300 c and 301 a to 301 c are arranged such that the sides in the short direction are arranged in a line along the sides in the longitudinal direction of the capacitor module 500.

  As a result, the distance between the power semiconductor modules 300a to 300c approaches and the distance between the capacitor terminals 503a to 503 can be shortened, so that heat generation due to the reflux current flowing between the power semiconductor modules 300a to 300c is suppressed. Can do. The same applies to the power semiconductor modules 301a to 301c.

  The metal support member 803 protrudes from the flow path forming body 12 and is connected to the flow path forming body 12. The metal base plate 11 is supported by the distal end portion of the support member 803. The flow path forming body 12 is connected to an electrical ground. A leakage current flow 804 indicates the direction of leakage current flowing from the driver circuit board 22 to the metal base plate 11, the support member 803, and the flow path forming body 12 in this order. A leakage current flow 805 indicates the direction of leakage current flowing from the control circuit board 20 to the metal base plate 11, the support member 803, and the flow path forming body 12 in this order. Thereby, the leakage current of the control circuit board 20 and the driver circuit board 22 can be efficiently passed to the ground.

  As shown in FIG. 3, the control circuit board 20 is disposed to face one surface of the lid 8 that forms the first opening 202. The connector 21 is directly mounted on the control circuit board 20 and protrudes to the outside through the first opening 202 formed in the lid 8. Thereby, the space inside the power conversion device 200 can be effectively used.

  In addition, since the control circuit board 20 on which the connector 21 is mounted is fixed to the metal base plate 11, even if a physical force is applied to the connector 21 from the outside, the load on the control circuit board 20 can be suppressed. , Improvement in reliability including durability can be expected.

  14 is a cross-sectional perspective view taken along plane B of FIG. The connection portion 23a is a connection portion between the signal terminal 325U of the power semiconductor module 301a and the driver circuit board 22. The connection portion 23b is a connection portion between the signal terminal 325L of the power semiconductor module 301a and the driver circuit board 22. The connection parts 23a and 23b are formed of a solder material.

  The through hole 11a of the metal base plate 11 is formed up to a position facing the connecting portions 23a and 23b. Thereby, in the state where the driver circuit board 22 is fixed to the metal base plate 11, the connection work of the connection portions 23 a and 23 b can be performed through the through holes 11 a of the metal base plate 11.

  The control circuit board 20 is arranged so that the projected part of the control circuit board 20 does not overlap the projected part of the through hole 11a when projected from the upper surface of the power conversion device 200. Thereby, the control circuit board 20 does not interfere with the connection work of the connection parts 23a and 23b, and the control circuit board 20 can reduce the influence of electromagnetic noise from the connection parts 23a and 23b.

  FIG. 15 is a cross-sectional view taken along a plane C of the flow path forming body 12 shown in FIG. The flow path forming body 12 includes a first flow path forming body 441 that forms the first flow path section 19a to the sixth flow path section 19f and a second flow path formation body 442 that forms the seventh flow path section 19g. Integrally formed. The first flow path forming body 441 is disposed on the side of the second flow path forming body 442. The second flow path forming body 442 forms a storage space 405 for storing the capacitor module 500 above the seventh flow path portion 19g. Further, the flow path forming body 12 has a wall 445 for forming a side wall of the storage space 405 and a part of the seventh flow path portion 19g. That is, the first flow path portion 19a to the sixth flow path portion 19f are formed at positions facing the wall 445.

  As a result, the capacitor module 500 not only cools the bottom surface of the capacitor module 500 by the seventh flow path portion 19g, but also the side surfaces in the height direction of the capacitor module 500 also have the first flow path portion 19a to the sixth flow path portion 19f. As a result, the cooling performance of the capacitor module 500 increases.

  The wall 445 forms part of the storage space 405, part of the seventh flow path part 19g, and part of the fourth flow path part 19d. Thereby, since the storage space to be cooled can be partitioned by the wall 445, cooling can be performed in module units for each capacitor module or power semiconductor module. As a result, the priority to be cooled can be selected for each storage space.

  Furthermore, the flow path forming body 12 integrally forms a first flow path forming body 441, a second flow path forming body 442, and a third flow path forming body 444 that forms the eighth flow path portion 19h. The third flow path forming body 444 is disposed on the side portion of the second flow path forming body 442. The flow path forming body 12 has a wall 460 for forming a side wall of the storage space 405 and a part of the eighth flow path portion 19h. That is, the eighth flow path portion 19h is formed at a position facing the wall 460. Thus, the capacitor module 500 not only cools the bottom surface of the capacitor module 500 by the seventh flow path portion 19g, but also cools the side surface in the height direction of the capacitor module 500 by the eighth flow path portion 19h. Further, the cooling performance of the capacitor module 500 is further increased.

  The flow path forming body 12 is integrally formed with a third flow path forming body 444 that forms the eighth flow path portion 19h, thereby further simplifying the structure.

  Further, as shown in FIG. 12, the capacitor terminals 503 a to 503 f are formed so as to straddle the upper portion of the wall 445. Thereby, the influence of the heat transmitted between the capacitor module and the power semiconductor module can be reduced.

  As shown in FIG. 12, the insulating member 446 is disposed at the upper end of the wall 445 and contacts the relay conductor portion 530 shown in FIG. Thereby, the influence of the heat transmitted between the capacitor module and the power semiconductor module can be further reduced.

  FIG. 16 is a top view of the power conversion device 200 with the lid 8, the control circuit board 20, the metal base plate 11, and the driver circuit board 22 removed.

  When projected from the upper surface of the power conversion device 200, 441s indicates a projection part of the first flow path forming body 441, 442s indicates a projection part of the second flow path forming body 442, and 444s indicates a third flow path forming body. 444 shows a projected portion. The auxiliary power module 350 is disposed so as to overlap with the projected portion 444 s of the third flow path forming body 444. Thereby, the auxiliary power module 350 can be cooled by the cooling medium flowing through the eighth flow path portion 19h.

  Further, the first flow path forming body 441 and the second flow path forming body 442 are arranged to face the side wall 12b, the side wall 12c, and the side wall 12d of the flow path forming body 12 through a gap portion 12e having an air layer. The Thereby, even when there is a difference between the cooling medium flowing in the first flow path forming body 441 and the second flow path forming body 442 and the external environment temperature, the gap portion 12e becomes a heat insulating layer, and the first flow path forming body 441. And the 2nd flow-path formation body 442 can make it difficult to receive to the influence of the external environment temperature of the power converter device 200. FIG.

8 Lid 11 Metal base plate 11a, 11b, 22a-22f Through-hole 12 Flow path formation body 12a-12d Side wall 12e Cavity 13 Inlet pipe 14 Outlet pipe 19a First flow path part 19b Second flow path part 19c Third flow path Part 19d fourth channel part 19e fifth channel part 19f sixth channel part 19g seventh channel part 19h eighth channel part 20 control circuit board 21 connector 22 driver circuit boards 23a, 23b, 370 connection part 24 transformer 120, 159, 320B AC terminal 136 Battery 138 DC connector 140, 142, 350B Inverter circuit 150 Upper and lower arm series circuit 153, 163 Collector electrode 154, 164 Gate electrode 155 Signal emitter electrode 156, 166 Diode 157 Positive terminal 158 Negative terminal 160 Metal bonding material 165 Signal emitter electrode 168 Medium Electrode 172 Control circuit 174, 350A Driver circuit 180, 180a-180f Current sensor 188 AC connector 195 Auxiliary motor 200 Power converter 202 First opening 203 Second opening 204a Third opening 204b Fourth opening 205 Fifth opening 300a 300c, 301a to 301c Power semiconductor module 302 Module primary sealing body 304 Module case 304A Thin portion 304B Flange 305 Fin 306 Insertion port 307A First heat dissipation surface 307B Second heat dissipation surface 309 Screws 315, 318, 319, 320 Conductor plate 315A DC Positive wiring 315B DC positive terminal 315C Auxiliary module side DC positive connection terminal 315D Element side DC positive connection terminal 319A DC negative wiring 319B DC negative terminal 319C Auxiliary module side DC negative connection terminal 3 9D Element side DC negative connection terminal 320A AC wiring 320C Auxiliary module side AC connection terminal 320D Element side AC connection terminal 322 Element fixing part 324U, 324L Signal wiring 325L, 325U Signal terminal 326L, 326U Auxiliary module side signal connection terminal 327L, 327U Element Side signal connection terminal 328, 330 IGBT
328A, 330A Control electrode 329 Intermediate electrode 333, 446 Insulating member 348 First sealing resin 350 Power module for auxiliary machine 351 Second sealing resin 360 Power semiconductor module height 371 Bonding wire 372 Tie bars 400a-400c, 402a-402c , 404 Opening 405 Storage space 406a to 406f Protruding part 407 Cooling part 409 Seal member 417 Flow direction 420 Lower cover 441 First flow path forming body 441s First flow path forming body projection part 442 Second flow path forming body 442s First Projection part 443 of the second flow path forming body 444 Height of the seventh flow path part 444 Third flow path formation body 444s Projection part 445 of the third flow path formation body 460 Wall 447, 448 Straight fin 500 Capacitor module 501 Multilayer conductor plate 502 Capacitor cases 503a to 503f Sensor terminal 504 negative electrode side capacitor terminal 505 negative electrode conductor plate 506 positive electrode side capacitor terminal 507 positive electrode conductor plate 508 battery negative electrode side terminal 509 battery positive electrode side terminal 510 negative electrode side power line 511 housing portion 512 positive electrode side power line 513 bottom surface portion 514 capacitor cell 515a 515b Noise filter capacitor cell 516, 517 Auxiliary capacitor terminal 520a to 520d hole 530 Relay conductor portion 540 Capacitor module height 550 Insulation sheet 551 Filler 600 Auxiliary mold body 608 Wiring insulation portion 802 AC bus bars 802a to 802f AC Side relay conductor 803 Support member 804, 805 Leakage current flow DEF Differential gear EGN Engine MG1, MG2 Motor generator TM Transmission TSM Power distribution mechanism

Claims (10)

And the power semiconductor module for converting direct current to alternating current,
A capacitor module for smoothing the direct current;
A conductor plate for electrically connecting the power semiconductor module and the capacitor module ;
A flow path forming body that forms a flow path for flowing a cooling refrigerant;
And a wall for forming a between the second air for housing the capacitor module and between the first air for housing the power semiconductor module,
The wall is connected to the flow path forming body;
The conductive plate, the power conversion device that is thermally connected via the insulating member to the wall. The power conversion device according to claim 1,
The power semiconductor module includes a module sealing body that seals a power semiconductor element, a first heat radiating portion that forms a first heat radiating surface facing one surface of the module sealing body, and the module sealing body. A second heat radiating portion that forms a second heat radiating surface facing the other surface,
The first heat radiating part and the second heat radiating part are power converters connected to the flow path forming body. The power conversion device according to claim 1 or 2,
The said conductor plate is a power converter device which has a positive electrode conductor plate, an insulating layer, and the negative electrode conductor plate arrange | positioned facing the said positive electrode conductor plate through the said insulating layer. The power conversion device according to claim 3,
When viewed from the arrangement direction of the positive electrode conductor plate and the negative electrode conductor plate, the conductor plate is a laminated state in which the insulating layer is interposed between the positive electrode conductor plate and the negative electrode conductor plate in a portion facing the wall. A power conversion device having a state in which the insulating layer is not interposed between the positive electrode conductor plate and the negative electrode conductor plate at a portion facing the power semiconductor module. The power conversion device according to any one of claims 1 to 4,
The channel member includes a first passage forming member for forming a first flow path portion for precooling the Kipa word semiconductor module, a second passage forming a second flow passage portion for cooling the capacitor module A formed body,
The first flow path forming body is disposed on a side portion of the second flow path forming body and is formed integrally with the second flow path forming body,
The second flow path forming body forms the second storage space above the second flow path portion,
The first flow path portion is formed at a position facing the wall,
Before Kipa Wah semiconductor module, a power conversion device that is inserted into the first flow path part. The power conversion device according to claim 5 ,
Said height sum of the height and the second flow path part of the capacitor module before Kipa Wah semiconductor module power converter which is smaller than the height of the. The power conversion device according to any one of claims 1 to 6,
Before anda power module auxiliary machine for driving the motor for a different auxiliary device is a motor driven by Kipa Wah semiconductor module,
The flow path forming body includes a first flow path forming body that forms a first flow path portion that cools the power semiconductor module, and a second flow path forming body that forms a second flow path portion that cools the capacitor module. And a third flow path forming body that forms a third flow path portion for cooling the auxiliary power module ,
When projected along the arrangement direction of the capacitor module and the second flow passage portion, the third flow path section, the bevel portion of the third flow path part of the capacitor module and the front Kipa Wah semiconductor module It is formed so as not to overlap the beveled part,
The auxiliary power module is a power conversion device disposed at a position facing the third flow path. The power conversion device according to any one of claims 1 to 7,
Before and Kipa Wah semiconductor module and the capacitor module and the case for housing the channel member,
The case is a power conversion device having a gap so that a portion surrounding the capacitor module has an air layer. The power conversion device according to claim 5,
The said flow path formation body is a power converter device which has a straight fin which protrudes in the said 2nd flow path. The power conversion device according to any one of claims 1 to 9,
Before Kipa Wah semiconductor module provided in plurality, and the respective front Kipa Wah semiconductor module is rectangular with its longitudinal sides and lateral direction of the sides,
The capacitor module has a rectangular shape having a longitudinal side and a lateral side,
The plurality of power semiconductor modules are power converters arranged such that the short sides of the plurality of power semiconductor modules are arranged in a line along the long sides of the capacitor module.

Images