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JP5893826B2 - Lead frame and manufacturing method thereof - Google Patents

Lead frame and manufacturing method thereof Download PDF

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Publication number
JP5893826B2
JP5893826B2 JP2010201579A JP2010201579A JP5893826B2 JP 5893826 B2 JP5893826 B2 JP 5893826B2 JP 2010201579 A JP2010201579 A JP 2010201579A JP 2010201579 A JP2010201579 A JP 2010201579A JP 5893826 B2 JP5893826 B2 JP 5893826B2
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Japan
Prior art keywords
plating layer
protective
lead frame
rough surface
lead
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JP2010201579A
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Japanese (ja)
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JP2011077519A (en
Inventor
沈昌漢
白城官
Original Assignee
ヘソン ディーエス カンパニー、リミテッド
ヘソン ディーエス カンパニー、リミテッド
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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Description

本発明は、リードフレーム及びその製造方法に関し、詳細には、モールド部との結合性を向上させたリードフレーム及びその製造方法に関する。   The present invention relates to a lead frame and a method for manufacturing the same, and more particularly, to a lead frame having improved bonding with a mold part and a method for manufacturing the same.

リードフレームは、半導体チップと共に半導体パッケージを構成し、半導体チップを支持し、かつ半導体チップを外部回路（例えばＰＣＢ）に電気的に接続させる。   The lead frame constitutes a semiconductor package together with the semiconductor chip, supports the semiconductor chip, and electrically connects the semiconductor chip to an external circuit (for example, PCB).

具体的には、半導体チップは、例えば接着剤を用いてリードフレームのダイパッド上に搭載される。そして、半導体チップは、ボンディングワイヤを用いてリードフレームのリードと接続される。半導体チップ、及び半導体チップとリードの間のボンディングされた部分は、外部環境からの絶縁及び保護のために、樹脂を含むモールド部により封止される。   Specifically, the semiconductor chip is mounted on the die pad of the lead frame using, for example, an adhesive. The semiconductor chip is connected to the leads of the lead frame using bonding wires. The semiconductor chip and the bonded portion between the semiconductor chip and the lead are sealed by a mold part containing resin for insulation and protection from the external environment.

しかし、モールド部とリードフレームとの結合性が低いためにモールド部とリードフレームの間に隙間が形成され、結果的に、半導体パッケージの耐久性が低下するという問題がある。   However, since the bonding between the mold part and the lead frame is low, a gap is formed between the mold part and the lead frame, resulting in a problem that the durability of the semiconductor package is lowered.

特に、半導体パッケージが高温環境に曝されるとき、モールド部に含まれる水分が膨脹し、
、互いに密接に接触しているモールド部とリードフレームとの間に剥離が生じて、結果的に、パッケージの構造的及び機能的信頼性が損なわれる。 In particular, when the semiconductor package is exposed to a high temperature environment, the moisture contained in the mold part expands,
Delamination occurs between the mold part and the lead frame that are in intimate contact with each other, and as a result, the structural and functional reliability of the package is impaired.

大韓民国特許出願第１０−２００９−００９４０５１号明細書Korean Patent Application No. 10-2009-0094051 Specification

本発明は、モールド部との結合性を向上させたリードフレーム及びその製造方法、並びに半導体パッケージの製造方法を提供する。   The present invention provides a lead frame having improved bonding properties to a mold part, a method for manufacturing the lead frame, and a method for manufacturing a semiconductor package.

本発明の一態様によれば、リードフレームであって、半導体チップが搭載されるダイパッドと、半導体チップに接続されるように配置される複数のリード部と、ダイパッド及びリード部の少なくとも片面に形成されるメッキ層とを備え、メッキ層が、所定の表面粗さを有し、メッキ層が、銅（Ｃｕ）を含有する粗面Ｃｕメッキ層と、該粗面Ｃｕメッキ層上に形成される保護メッキ層とを含むような該リードフレームが提供される。   According to one aspect of the present invention, a lead frame is formed on at least one surface of a die pad on which a semiconductor chip is mounted, a plurality of lead portions arranged to be connected to the semiconductor chip, and the die pad and the lead portion. A plating layer having a predetermined surface roughness, and the plating layer is formed on the rough surface Cu plating layer containing copper (Cu) and the rough surface Cu plating layer. The lead frame is provided including a protective plating layer.

保護メッキ層は、Ｃｕを含有し得る。   The protective plating layer can contain Cu.

保護メッキ層は、ニッケル（Ｎｉ）またはＮｉ合金を含有するＮｉメッキ層と、Ｎｉメッキ層上に形成され、パラジウム（Ｐｄ）またはＰｄ合金を含有するＰｄメッキ層と、Ｐｄメッキ層上に形成され、金（Ａｕ）またはＡｕ合金を含有するＡｕメッキ層とを含み得る。   The protective plating layer is formed on the Ni plating layer containing nickel (Ni) or Ni alloy, the Ni plating layer, the Pd plating layer containing palladium (Pd) or Pd alloy, and the Pd plating layer. And an Au plating layer containing gold (Au) or an Au alloy.

保護メッキ層の厚さは、粗面Ｃｕメッキ層の厚さより大きいものであり得る。   The thickness of the protective plating layer may be larger than the thickness of the rough surface Cu plating layer.

ダイパッド及びリード部は、単体として一体化され得る。   The die pad and the lead portion can be integrated as a single body.

保護メッキ層の厚さは、約０．１２５μｍないし約１．０μｍであり得る。   The thickness of the protective plating layer may be about 0.125 μm to about 1.0 μm.

保護メッキ層の平均表面粗さ（Ｒａ）は、約０．１μｍないし約０．５μｍであり得る。   The protective plating layer may have an average surface roughness (Ra) of about 0.1 μm to about 0.5 μm.

リード部の上部の保護メッキ層上に、銀（Ａｇ）メッキ層、金（Ａｕ）メッキ層、及びニッケル（Ｎｉ）／パラジウム（Ｐｄ）／金（Ａｕ）積層構造を有するメッキ層からなる群から選択されるメッキ層をさらに含み得る。   From the group consisting of a silver (Ag) plating layer, a gold (Au) plating layer, and a plating layer having a nickel (Ni) / palladium (Pd) / gold (Au) laminated structure on the protective plating layer above the lead portion. It may further include a selected plating layer.

保護メッキ層上に、Ｎｉ／Ｐｄ／Ａｕ積層構造を有するメッキ層をさらに含み得る。   A plating layer having a Ni / Pd / Au laminated structure may be further included on the protective plating layer.

本発明の他の側面によれば、リードフレームの製造方法であって、（ａ）原料基板をパターニングして、ダイパッド及び複数のリード部を形成するステップと、（ｂ）所定の表面粗さを有しかつ銅を含有する粗面Ｃｕメッキ層をダイパッド及び各リード部の少なくとも片面に形成し、粗面Ｃｕメッキ層上に保護メッキ層を形成するステップとを含む方法が提供される。   According to another aspect of the present invention, there is provided a method for manufacturing a lead frame, comprising: (a) patterning a raw material substrate to form a die pad and a plurality of lead portions; and (b) a predetermined surface roughness. And forming a rough surface Cu plating layer containing copper on at least one surface of the die pad and each lead portion, and forming a protective plating layer on the rough surface Cu plating layer.

粗面Ｃｕメッキ層は、電解メッキ法を用いて硫酸銅溶液中で形成され得る。   The rough surface Cu plating layer may be formed in a copper sulfate solution using an electrolytic plating method.

硫酸銅溶液は、硫酸及び硫酸銅５水和物（ＣｕＳＯ４・５Ｈ２Ｏ）を含有し得る。 The copper sulfate solution may contain sulfuric acid and copper sulfate pentahydrate (CuSO 4 .5H 2 O).

硫酸銅溶液中の硫酸の濃度は、約２０ｍｌ／ｌないし約６０ｍｌ／ｌであり得る。   The concentration of sulfuric acid in the copper sulfate solution can be from about 20 ml / l to about 60 ml / l.

硫酸銅溶液中の硫酸銅５水和物（ＣｕＳＯ４・５Ｈ２Ｏ）の濃度は、約１０ｇ／ｌないし約３０ｇ／ｌであり得る。 The concentration of copper sulfate pentahydrate (CuSO 4 .5H 2 O) in the copper sulfate solution can be from about 10 g / l to about 30 g / l.

粗面Ｃｕメッキ層は、約５秒ないし約２０秒間の電流印加によって形成され得る。   The rough surface Cu plating layer may be formed by applying a current for about 5 seconds to about 20 seconds.

保護メッキ層は、Ｃｕを含有し得る。   The protective plating layer can contain Cu.

保護メッキ層は、ニッケル（Ｎｉ）またはＮｉ合金を含有するＮｉメッキ層と、Ｎｉメッキ層上に形成され、パラジウム（Ｐｄ）またはＰｄ合金を含有するＰｄメッキ層と、Ｐｄメッキ層上に形成され、金（Ａｕ）またはＡｕ合金を含有するＡｕメッキ層とを含み得る。   The protective plating layer is formed on the Ni plating layer containing nickel (Ni) or Ni alloy, the Ni plating layer, the Pd plating layer containing palladium (Pd) or Pd alloy, and the Pd plating layer. And an Au plating layer containing gold (Au) or an Au alloy.

保護メッキ層の厚さは、粗面Ｃｕメッキ層の厚さより大きいものであり得る。   The thickness of the protective plating layer may be larger than the thickness of the rough surface Cu plating layer.

保護メッキ層の厚さは、約０．１２５μｍないし約１．０μｍであり得る。   The thickness of the protective plating layer may be about 0.125 μm to about 1.0 μm.

保護メッキ層の平均表面粗さ（Ｒａ）は、約０．１μｍないし約０．５μｍであり得る。   The protective plating layer may have an average surface roughness (Ra) of about 0.1 μm to about 0.5 μm.

上記方法は、リード部の上部の保護メッキ層上に、銀（Ａｇ）メッキ層、金（Ａｕ）メッキ層、及びニッケル（Ｎｉ）／パラジウム（Ｐｄ）／金（Ａｕ）積層構造を有するメッキ層からなる群から選択されるメッキ層を形成するステップをさらに含み得る。   In the above method, a silver (Ag) plating layer, a gold (Au) plating layer, and a plating layer having a nickel (Ni) / palladium (Pd) / gold (Au) laminated structure on the protective plating layer on the upper portion of the lead portion. The method may further include forming a plating layer selected from the group consisting of:

保護メッキ層上に、Ｎｉ／Ｐｄ／Ａｕ積層構造を有するメッキ層がさらに形成され得る。   A plating layer having a Ni / Pd / Au laminated structure may be further formed on the protective plating layer.

本発明によるリードフレーム及びその製造方法は、モールド部との接合性を向上させることができる。   The lead frame and the manufacturing method thereof according to the present invention can improve the bondability with the mold part.

本発明の一実施形態によるリードフレーム及びリードフレームを有する半導体パッケージを示す平面図である。1 is a plan view showing a lead frame and a semiconductor package having the lead frame according to an embodiment of the present invention. 図１のＩＩ−ＩＩ線断面図である。It is the II-II sectional view taken on the line of FIG. 図２のＡ部分の拡大図である。FIG. 3 is an enlarged view of a portion A in FIG. 2. 本発明の一実施形態によるリードフレームの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the lead frame by one Embodiment of this invention. 本発明の一実施形態によるリードフレームの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the lead frame by one Embodiment of this invention. 本発明の一実施形態によるリードフレームの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the lead frame by one Embodiment of this invention. 本発明の一実施形態によるリードフレームの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the lead frame by one Embodiment of this invention. 本発明の一実施形態によるリードフレームの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the lead frame by one Embodiment of this invention. 本発明の一実施形態によるリードフレームの製造方法を用いて、半導体パッケージの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of a semiconductor package using the manufacturing method of the lead frame by one Embodiment of this invention. 本発明の一実施形態によるリードフレームの製造方法を用いて、半導体パッケージの製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of a semiconductor package using the manufacturing method of the lead frame by one Embodiment of this invention.

以下、添付された図面に示した本発明による実施形態を参照して、本発明の構成及び作用を詳細に説明する。   Hereinafter, the configuration and operation of the present invention will be described in detail with reference to embodiments of the present invention shown in the accompanying drawings.

図１は、本発明の一実施形態によるリードフレーム及びそれを利用した半導体パッケージを示す平面図であり、図２は、図１のＩＩ−ＩＩ線断面図である。図３は、図２のＡ部分の拡大図である。   FIG. 1 is a plan view showing a lead frame and a semiconductor package using the lead frame according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II of FIG. FIG. 3 is an enlarged view of a portion A in FIG.

図１に示した半導体パッケージ３００は、クワッド・フラット・ノンリード（ＱＦＮ）型パッケージである。図１及び図２を参照すると、半導体パッケージ３００には、リードフレーム１００と、リードフレーム１００上に搭載された半導体チップ２００とが含まれる。図示していないが、半導体チップ２００は、接着剤によりダイパッド１１０と接合され得る。   The semiconductor package 300 shown in FIG. 1 is a quad flat non-lead (QFN) type package. Referring to FIGS. 1 and 2, the semiconductor package 300 includes a lead frame 100 and a semiconductor chip 200 mounted on the lead frame 100. Although not shown, the semiconductor chip 200 can be bonded to the die pad 110 with an adhesive.

リードフレーム１００には、半導体チップ２００が取り付けられるダイパッド１１０と、複数のリード部１２０とが含まれる。複数のリード部１２０は、半導体チップ２００の周辺部に沿って均等に配列されており、入出力信号のための配線を提供するようにボンディングワイヤ２２０を用いて半導体チップ２００の電極パッドと接続されている。ボンディングワイヤ２２０は、Ａｕ素材で形成され、半導体チップ２００とリード部１２０とを電気的に接続させる。   The lead frame 100 includes a die pad 110 to which the semiconductor chip 200 is attached and a plurality of lead portions 120. The plurality of lead portions 120 are evenly arranged along the peripheral portion of the semiconductor chip 200 and are connected to the electrode pads of the semiconductor chip 200 using bonding wires 220 so as to provide wiring for input / output signals. ing. The bonding wire 220 is formed of an Au material, and electrically connects the semiconductor chip 200 and the lead part 120.

複数のリード部１２０は、互いから均等に離間されるようにアウターフレーム（外枠部）１７０により支持され、アウターフレーム１７０の四隅から延出する支持部１８０が、ダイパッド１１０を均衡を保つように支持することができる。   The plurality of lead portions 120 are supported by an outer frame (outer frame portion) 170 so as to be evenly spaced from each other, and support portions 180 extending from the four corners of the outer frame 170 keep the die pad 110 in balance. Can be supported.

半導体チップ２００は、モールド部２５０によって密封される。モールド部２５０は、エポキシ・モールディング・コンパウンド（ＥＭＣ）などの樹脂を含み、外部からの衝撃及び汚染から半導体チップ２００を保護する。半導体パッケージ３００の裏面は、外部に露出されており、回路基板（図示せず）に電気的に接続され得る。   The semiconductor chip 200 is sealed by the mold part 250. The mold part 250 includes a resin such as an epoxy molding compound (EMC) and protects the semiconductor chip 200 from external impact and contamination. The back surface of the semiconductor package 300 is exposed to the outside and can be electrically connected to a circuit board (not shown).

ダイパッド１１０上及びリード部１２０の表面上に、メッキ層１５０が形成されている。メッキ層１５０は、粗面Ｃｕメッキ層１５１及び保護メッキ層１５２を含む。   A plating layer 150 is formed on the die pad 110 and the surface of the lead part 120. The plating layer 150 includes a rough surface Cu plating layer 151 and a protective plating layer 152.

粗面Ｃｕメッキ層１５１は、所定の平均表面粗さを有する凸凹した表面を呈する。保護メッキ層１５２は、粗面Ｃｕメッキ層１５１の凸凹表面上に形成され、粗面Ｃｕメッキ層１５１の凸凹表面に対応する凸凹表面を有する。   The rough surface Cu plating layer 151 has an uneven surface having a predetermined average surface roughness. The protective plating layer 152 is formed on the uneven surface of the rough surface Cu plating layer 151, and has an uneven surface corresponding to the uneven surface of the rough surface Cu plating layer 151.

保護メッキ層１５２は、粗面Ｃｕメッキ層１５１をダイパッド１１０及びリード部１２０にしっかりと接着させるのに役立ち、粗面Ｃｕメッキ層１５１の表面の剥離を防止する。シードメッキ層としての役割を果たす粗面Ｃｕメッキ層１５１は、高電流での急速な成長を通じて形成されるので、被メッキ物との接着性が損なわれる。換言すれば、粗面Ｃｕメッキ層１５１とダイパッド１１０及びリード部１２０との接着性が損なわれる。本実施形態においては、保護メッキ層１５２が粗面Ｃｕメッキ層１５１上に形成され、粗面Ｃｕメッキ層１５１とダイパッド１１０及びリード部１２０との接着性を向上させる。その結果、粗面Ｃｕメッキ層１５１は、容易に固定され、外部物質から保護される。保護メッキ層１５２は、Ｃｕメッキ層１５１の接着性を強化するのみならず、表面にでこぼこ部分を有し、でこぼこ部分は、リード部１２０及びダイパッド１１０の表面上において安定に形成される。 The protective plating layer 152 serves to firmly adhere the rough surface Cu plating layer 151 to the die pad 110 and the lead part 120, and prevents peeling of the surface of the rough surface Cu plating layer 151. Since the rough surface Cu plating layer 151 serving as a seed plating layer is formed through rapid growth at a high current, adhesion to the object to be plated is impaired. In other words, the adhesion between the rough surface Cu plating layer 151 and the die pad 110 and the lead portion 120 is impaired. In the present embodiment, the protective plating layer 152 is formed on the rough surface Cu plating layer 151 and improves the adhesion between the rough surface Cu plating layer 151 and the die pad 110 and the lead part 120. As a result, the rough surface Cu plating layer 151 is easily fixed and protected from external substances. The protective plating layer 152 not only enhances the adhesion of the Cu plating layer 151 but also has a bumpy portion on the surface, and the bumpy portion is stably formed on the surfaces of the lead portion 120 and the die pad 110.

保護メッキ層１５２は、約０．１２５μｍないし約１．０μｍの厚さを有し得る。   The protective plating layer 152 may have a thickness of about 0.125 μm to about 1.0 μm.

保護メッキ層１５２の厚さが０．１２５μｍ未満であれば、粗面Ｃｕメッキ層１５１は容易に接着されることができない。したがって、保護メッキ層１５２の厚さは、０．１２５μｍに等しいかまたはそれ以上であることが望ましい。また、保護メッキ層１５２の厚さが１．０μｍを超えると、保護メッキ層１５２の表面が、粗面Ｃｕメッキ層１５１の凸凹表面に対応する平均表面粗さを有することが難しくなる。したがって、保護メッキ層１５２の厚さは、１．０μｍ以下であることが望ましい。   If the thickness of the protective plating layer 152 is less than 0.125 μm, the rough surface Cu plating layer 151 cannot be easily adhered. Therefore, the thickness of the protective plating layer 152 is desirably equal to or greater than 0.125 μm. Moreover, when the thickness of the protective plating layer 152 exceeds 1.0 μm, it is difficult for the surface of the protective plating layer 152 to have an average surface roughness corresponding to the uneven surface of the rough Cu plating layer 151. Therefore, the thickness of the protective plating layer 152 is preferably 1.0 μm or less.

保護メッキ層１５２は、多様な金属を含有し得る。また、保護メッキ層１５２は、以下に述べる理由により銅を含有することが望ましい。   The protective plating layer 152 can contain various metals. The protective plating layer 152 preferably contains copper for the following reason.

第一に、保護メッキ層１５２が銅でできている場合に、保護メッキ層１５２の下の粗面Ｃｕメッキ層１５１をシード層として用いることによって、メッキ工程が容易に行われる。さらに、保護メッキ層１５２と粗面Ｃｕメッキ層１５１との接着性が向上する。さらに、銅粒子は、凸凹表面を有する粗面Ｃｕメッキ層１５１をシード層として用いることによって成長し、保護メッキ層１５２を形成するので、粗面Ｃｕメッキ層１５１の凸凹表面に対応する所定の平均表面粗さ値を有するように保護メッキ層１５２の凸凹表面を形成することは容易である。   First, when the protective plating layer 152 is made of copper, the roughening Cu plating layer 151 below the protective plating layer 152 is used as a seed layer, thereby facilitating the plating process. Furthermore, the adhesion between the protective plating layer 152 and the rough surface Cu plating layer 151 is improved. Further, since the copper particles grow by using the rough surface Cu plating layer 151 having the uneven surface as a seed layer to form the protective plating layer 152, the predetermined average corresponding to the uneven surface of the rough surface Cu plating layer 151 is obtained. It is easy to form the uneven surface of the protective plating layer 152 so as to have a surface roughness value.

しかし、本発明は、これに限定されない。保護メッキ層１５２は、ＮｉまたはＮｉ合金を含有するＮｉメッキ層／ＰｄまたはＰｄ合金を含有するＰｄメッキ層／ＡｕまたはＡｕ合金を含有するＡｕメッキ層からなる積層構造の層であり得る。換言すれば、保護メッキ層１５２は、予めメッキされたフレームとして形成され得る。その結果、保護メッキ層１５２のはんだ付け性が向上するので、後の工程で鉛メッキなどの追加工程が不要になり得る。さらに、積層層構造を有する保護メッキ層１５２は、スモール・アウトライン集積回路（ＳＯＩＣ）やクワッド・フラット・パッケージ（ＱＦＰ）など外部リードを曲げる必要がある製品群において、はんだ付け不良を生じさせ得るクラックを減少させる。さらに、ボンディングワイヤ２２０がＣｕを含有する場合には、保護メッキ層１５２とボンディングワイヤ２２０との接着性も向上する。ここで、保護メッキ層１５２のＡｕメッキ層がＡｇまたはＰｄを含有する場合には、モールド部２５０と保護メッキ層１５２との接着性が向上し得る。   However, the present invention is not limited to this. The protective plating layer 152 may be a layer having a laminated structure of Ni plating layer containing Ni or Ni alloy / Pd plating layer containing Pd or Pd alloy / Au plating layer containing Au or Au alloy. In other words, the protective plating layer 152 can be formed as a pre-plated frame. As a result, since the solderability of the protective plating layer 152 is improved, an additional process such as lead plating may be unnecessary in a later process. Further, the protective plating layer 152 having a laminated layer structure is a crack that may cause poor soldering in a product group that requires bending of external leads such as a small outline integrated circuit (SOIC) or a quad flat package (QFP). Decrease. Furthermore, when the bonding wire 220 contains Cu, the adhesion between the protective plating layer 152 and the bonding wire 220 is also improved. Here, when the Au plating layer of the protective plating layer 152 contains Ag or Pd, the adhesion between the mold portion 250 and the protective plating layer 152 can be improved.

さらに、粗面Ｃｕメッキ層１５１は、Ｎｉなど他の金属に比べて優れた延性を有しているので、後の工程で形成されることになる保護メッキ層１５２のクラックを防止する。さらに、ボンディングワイヤ２２０がＣｕを含有する場合には、保護メッキ層１５２とボンディングワイヤ２２０との接着性も向上する。   Furthermore, since the rough surface Cu plating layer 151 has excellent ductility compared to other metals such as Ni, cracking of the protective plating layer 152 to be formed in a later step is prevented. Furthermore, when the bonding wire 220 contains Cu, the adhesion between the protective plating layer 152 and the bonding wire 220 is also improved.

粗面Ｃｕメッキ層１５１は、所定の平均表面粗さを有する凸凹表面を呈する。具体的には、粗面Ｃｕメッキ層１５１の平均表面粗さは、約０．１μｍないし約０．５μｍであり得る。   The rough surface Cu plating layer 151 presents an uneven surface having a predetermined average surface roughness. Specifically, the average surface roughness of the rough Cu plating layer 151 may be about 0.1 μm to about 0.5 μm.

粗面Ｃｕメッキ層１５１の平均表面粗さが０．１μｍより小さい場合には、表面の凹部及び凸部は非常に小さくなり、その上に形成されることになる保護メッキ層１５２においても、形成される凹部及び凸部は非常に小さくなる。その結果、モールド部２５０との結合が弱くなり、ひいては保護メッキ層１５２とモールド部との接着性が低下する。したがって、粗面Ｃｕメッキ層１５１の表平均面粗度は、０．１μｍであることが望ましい。   When the average surface roughness of the rough surface Cu plating layer 151 is smaller than 0.1 μm, the concave and convex portions on the surface become very small, and the protective plating layer 152 to be formed thereon is also formed. The concave and convex portions to be made are very small. As a result, the bond with the mold part 250 becomes weak, and as a result, the adhesiveness between the protective plating layer 152 and the mold part decreases. Therefore, the surface average surface roughness of the rough surface Cu plating layer 151 is desirably 0.1 μm.

さらに、粗面Ｃｕメッキ層１５１の平均表面粗さが０．５μｍより大きい場合には、粗面Ｃｕメッキ層１５１の表面が不安定になるので、粗面Ｃｕメッキ層１５１が部分的に剥離し得る。したがって、粗面Ｃｕメッキ層１５１の表面粗さを０．５μｍに等しいかそれ以下であることが望ましい。   Furthermore, when the average surface roughness of the rough surface Cu plating layer 151 is larger than 0.5 μm, the surface of the rough surface Cu plating layer 151 becomes unstable, so that the rough surface Cu plating layer 151 is partially peeled off. obtain. Therefore, it is desirable that the surface roughness of the rough surface Cu plating layer 151 is equal to or less than 0.5 μm.

粗面Ｃｕメッキ層１５１は、所定の凸凹表面粗さを有する。保護メッキ層１５２は、粗面Ｃｕメッキ層１５１の凸凹表面上に形成され、粗面Ｃｕメッキ層１５１の凸凹表面に対応する凸凹表面を有する。換言すれば、保護メッキ層１５２の平均表面粗さは、約０．１μｍないし約０．５μｍであり得る。   The rough surface Cu plating layer 151 has a predetermined uneven surface roughness. The protective plating layer 152 is formed on the uneven surface of the rough surface Cu plating layer 151, and has an uneven surface corresponding to the uneven surface of the rough surface Cu plating layer 151. In other words, the average surface roughness of the protective plating layer 152 may be about 0.1 μm to about 0.5 μm.

半導体パッケージ３００において、リードフレーム１００及びモールド部２５０は、異なる表面特性を有するので、両者の間の接着性は弱い。さらに、半導体パッケージ３００内に外部から水分が浸透すると、モールド部２５０の成分に付着している水分が高温で膨脹するときにモールド部２５０とリードフレーム１００の間で層間剥離が生じることがある。   In the semiconductor package 300, since the lead frame 100 and the mold part 250 have different surface characteristics, the adhesion between them is weak. Further, when moisture penetrates into the semiconductor package 300 from the outside, delamination may occur between the mold part 250 and the lead frame 100 when the moisture adhering to the components of the mold part 250 expands at a high temperature.

本発明によれば、メッキ層１５０の一部でありかつ凸凹表面を有する保護メッキ層１５２がモールド部２５０と接触するので、モールド部２５０とリードフレーム１００は、より広い面積で互いに接触する際に生じる結合特性のおかげで、分離しないようになっている。   According to the present invention, since the protective plating layer 152 that is a part of the plating layer 150 and has an uneven surface is in contact with the mold part 250, the mold part 250 and the lead frame 100 are in contact with each other over a wider area. Thanks to the resulting binding properties, they are not separated.

半導体チップ２００及びリード部１２０は、ボンディングワイヤ２２０を用いて接続される。安定したボンディングのために、リード部１２０の上の保護メッキ層１５２上にＡｇメッキ層１６０が選択的に形成され得る。しかし、本発明はこれに限定されず、選択的メッキ層１６０は、Ａｕメッキ層であり得るか、またはニッケル（Ｎｉ）／パラジウム（Ｐｄ）／金（Ａｕ）積層構造を有するメッキ層であり得る。特に、上記した構造を有するメッキ層は、保護メッキ層１５２がＣｕを含有する場合に保護メッキ層１５２上に形成され得る。ここで、Ｎｉ／Ｐｄ／Ａｕ積層構造を有するメッキ層は、保護メッキ層１５２の選択された部分上に形成される代わりに、リード部１２０上の保護メッキ層１５２の上面全体に形成され得る。ここで、Ａｕメッキ層とモールド部２５０との接合性向上のために、保護メッキ層１５２の上面上に形成されるＡｕメッキ層は、ＡｇまたはＰｄを含有し得る。   The semiconductor chip 200 and the lead part 120 are connected using a bonding wire 220. An Ag plating layer 160 may be selectively formed on the protective plating layer 152 on the lead part 120 for stable bonding. However, the present invention is not limited to this, and the selective plating layer 160 may be an Au plating layer or a plating layer having a nickel (Ni) / palladium (Pd) / gold (Au) laminated structure. . In particular, the plating layer having the above-described structure can be formed on the protective plating layer 152 when the protective plating layer 152 contains Cu. Here, the plating layer having the Ni / Pd / Au laminated structure may be formed on the entire upper surface of the protective plating layer 152 on the lead part 120 instead of being formed on a selected portion of the protective plating layer 152. Here, in order to improve the bondability between the Au plating layer and the mold part 250, the Au plating layer formed on the upper surface of the protective plating layer 152 may contain Ag or Pd.

図示していないが、半導体パッケージ３００の底面上、すなわちダイパッド１１０及びリード部１２０の露出されている面上に、錫（Ｓｎ）メッキ層が形成され得る。後の工程で外部回路基板上に半導体パッケージ３００が搭載される時、Ｓｎメッキ層は、外部回路基板のランドパターンとの堅固な導電性結合を形成し得る。   Although not shown, a tin (Sn) plating layer may be formed on the bottom surface of the semiconductor package 300, that is, on the exposed surface of the die pad 110 and the lead part 120. When the semiconductor package 300 is mounted on the external circuit board in a later process, the Sn plating layer may form a strong conductive bond with the land pattern of the external circuit board.

上記した半導体パッケージ３００は、リードフレーム１００の裏面が露出されているＱＦＮ型半導体パッケージであるが、本発明はこれに限定されない。換言すれば、本発明は、リードフレーム１００がモールド部２５０によって囲繞されかつ封止されている半導体パッケージにも適用され得る。この場合、メッキ層１５０はリードフレーム１００の両面上に形成され得る。   The semiconductor package 300 described above is a QFN type semiconductor package in which the back surface of the lead frame 100 is exposed, but the present invention is not limited to this. In other words, the present invention can also be applied to a semiconductor package in which the lead frame 100 is surrounded by the mold part 250 and sealed. In this case, the plating layer 150 may be formed on both sides of the lead frame 100.

図４Ａないし図４Ｅは、本発明の一実施形態によるリードフレームの製造方法を説明するための断面図である。これらの図面を参照して、リードフレームの製造方法をステップ毎に説明する。   4A to 4E are cross-sectional views for explaining a lead frame manufacturing method according to an embodiment of the present invention. The lead frame manufacturing method will be described step by step with reference to these drawings.

図４Ａを参照すると、金属を含有する原料基板をパターニングすることによって、ダイパッド１１０及びリード部１２０が形成される。具体的には、Ｃｕ、Ｃｕ合金、４２アロイなどの金属を含有する原料基板をパターニングすることによって、ダイパッド１１０及びリード部１２０が形成され得る。エッチング、スタンピング、パンチングなどの多様なパターニング方法が用いられ得る。   Referring to FIG. 4A, the die pad 110 and the lead part 120 are formed by patterning a raw material substrate containing metal. Specifically, the die pad 110 and the lead part 120 can be formed by patterning a raw material substrate containing a metal such as Cu, Cu alloy, or 42 alloy. Various patterning methods such as etching, stamping and punching can be used.

次に、図４Ｂ及び図４Ｃを参照すると、粗面Ｃｕメッキ層１５１が形成される。粗面Ｃｕメッキ層１５１は、電解メッキ法を用いて硫酸銅溶液中で形成される。電解メッキ中の電流密度は１５Ａ／ｄｍ２に等しいかまたはそれ以上であり得、それによって、粗面Ｃｕメッキ層１５１の表面は所定の平均表面粗さを有し得る。 Next, referring to FIG. 4B and FIG. 4C, a rough surface Cu plating layer 151 is formed. The rough surface Cu plating layer 151 is formed in a copper sulfate solution using an electrolytic plating method. The current density during electroplating may be equal to or greater than 15 A / dm 2 , whereby the surface of the roughened Cu plating layer 151 may have a predetermined average surface roughness.

具体的には、硫酸銅溶液は、硫酸及び硫酸銅５水和物（ＣｕＳＯ４・５Ｈ２Ｏ）を含有する。硫酸及びＣｕＳＯ４・５Ｈ２Ｏの濃度は、後述するように決定され得る。 Specifically, the copper sulfate solution contains sulfuric acid and copper sulfate pentahydrate (CuSO 4 .5H 2 O). The concentration of sulfuric acid and CuSO 4 .5H 2 O can be determined as described below.

ＣｕＳＯ４・５Ｈ２Ｏの濃度は、約１０ｇ／ｌないし約３０ｇ／ｌであり得る。ＣｕＳＯ４・５Ｈ２Ｏの濃度が１０ｇ／ｌより低ければ、溶液中で硫酸銅イオンが不足する。その結果、電解メッキに掛かる時間が長くなり、粗面Ｃｕメッキ層１５１を形成するために電流密度を上昇させる必要がある。この場合、粗面Ｃｕメッキ層１５１の成長は不安定であるので、粗面Ｃｕメッキ層１５１とダイパッド１１０及びリード部１２０との接合性が低下する。したがって、ＣｕＳＯ４・５Ｈ２Ｏの濃度は、１０ｇ／ｌに等しいかまたはそれ以上であることが望ましい。 The concentration of CuSO 4 .5H 2 O can be from about 10 g / l to about 30 g / l. If the concentration of CuSO 4 .5H 2 O is lower than 10 g / l, copper sulfate ions are insufficient in the solution. As a result, the time required for electrolytic plating becomes longer, and it is necessary to increase the current density in order to form the rough surface Cu plating layer 151. In this case, since the growth of the rough surface Cu plating layer 151 is unstable, the bondability between the rough surface Cu plating layer 151 and the die pad 110 and the lead part 120 is lowered. Therefore, it is desirable that the concentration of CuSO 4 .5H 2 O is equal to or more than 10 g / l.

一方、ＣｕＳＯ４・５Ｈ２Ｏの濃度が３０ｇ／ｌより高ければ、粗面Ｃｕメッキ層１５１が過度に成長し得、スマットが発生し得る。スマットのせいで、粗面Ｃｕメッキ層１５２がダイパッド１１０及びリード部１２０から分離され得るか、または粗面Ｃｕメッキ層１５２の表面が部分的に剥離し得る。さらに、粗面Ｃｕメッキ層１５２はリード部１２０から過度に成長し得るので、バリが発生し得る。したがって、ＣｕＳＯ４・５Ｈ２Ｏの濃度は、３０ｇ／ｌに等しいかまたはそれ以下であることが望ましい。 On the other hand, if the concentration of CuSO 4 .5H 2 O is higher than 30 g / l, the rough surface Cu plating layer 151 may grow excessively and smut may occur. Due to the smut, the rough surface Cu plating layer 152 may be separated from the die pad 110 and the lead portion 120, or the surface of the rough surface Cu plating layer 152 may be partially peeled off. Furthermore, since the rough Cu plating layer 152 can grow excessively from the lead portion 120, burrs can occur. Accordingly, the concentration of CuSO 4 .5H 2 O is desirably equal to or less than 30 g / l.

硫酸の濃度は、約２０ｍｌ／ｌないし約６０ｍｌ／ｌであり得る。硫酸の濃度が２０ｍｌ／ｌより低ければ、導電性の塩が不足するので、電流の集中により焼けて黒くなった部分を有する粗面Ｃｕメッキ層１５１が形成される。この場合、粗面Ｃｕメッキ層１５１は、所望の平均表面粗さを有することができず、伝導度の低下を呈する。したがって、硫酸の濃度は、２０ｍｌ／ｌに等しいかまたはそれ以上であることが望ましい。   The concentration of sulfuric acid can be about 20 ml / l to about 60 ml / l. If the concentration of sulfuric acid is lower than 20 ml / l, the conductive salt is insufficient, so that a rough surface Cu plating layer 151 having a portion burned and blackened due to current concentration is formed. In this case, the rough surface Cu plating layer 151 cannot have a desired average surface roughness and exhibits a decrease in conductivity. Therefore, it is desirable that the concentration of sulfuric acid is equal to or higher than 20 ml / l.

硫酸の濃度が６０ｍｌ／ｌより高ければ、導電性の塩が溶液中で過剰になる。その結果、メッキ層は研磨される。したがって、所定の平均表面粗さを有する凸凹表面を呈する粗面Ｃｕメッキ層１５１の形成が困難になる。したがって、硫酸の濃度は、６０ｍｌ／ｌに等しいかまたはそれ以下であることが望ましい。   If the concentration of sulfuric acid is higher than 60 ml / l, the conductive salt becomes excessive in the solution. As a result, the plating layer is polished. Therefore, it becomes difficult to form the rough surface Cu plating layer 151 exhibiting an uneven surface having a predetermined average surface roughness. Therefore, it is desirable that the concentration of sulfuric acid is equal to or less than 60 ml / l.

粗面Ｃｕメッキ層１５１が、電解メッキ法を用いて形成される場合、電解メッキ工程は、約５秒ないし約２０秒間行われ得る。電解メッキ工程が５秒未満しか行われなければ、粗面Ｃｕメッキ層１５１はダイパッド１１０及びリード部１２０に付着され得ない。したがって、粗面Ｃｕメッキ層１５１を形成するための電解メッキ工程は、５秒間またはそれ以上の時間行われ得る。一方、電解メッキ工程が２０秒間より長く行われるならば、粗面Ｃｕメッキ層１５１の表面は剥離し得る。したがって、Ｃｕメッキ層１５１を形成するための電解メッキ工程は、２０秒間またはそれ以下の時間行われ得る。   When the rough surface Cu plating layer 151 is formed using an electrolytic plating method, the electrolytic plating process may be performed for about 5 seconds to about 20 seconds. If the electrolytic plating process is performed for less than 5 seconds, the rough surface Cu plating layer 151 cannot be attached to the die pad 110 and the lead part 120. Therefore, the electrolytic plating process for forming the rough surface Cu plating layer 151 can be performed for 5 seconds or more. On the other hand, if the electrolytic plating process is performed for longer than 20 seconds, the surface of the roughened Cu plating layer 151 can be peeled off. Therefore, the electrolytic plating process for forming the Cu plating layer 151 may be performed for 20 seconds or less.

粗面Ｃｕメッキ層１５１は、所定の平均表面粗さを有する凸凹表面を呈する。具体的には、粗面Ｃｕメッキ層１５１の平均表面粗さ（Ｒａ）は、約０．１μｍないし約０．５μｍであり得る。   The rough surface Cu plating layer 151 presents an uneven surface having a predetermined average surface roughness. Specifically, the average surface roughness (Ra) of the rough Cu plating layer 151 may be about 0.1 μm to about 0.5 μm.

粗面Ｃｕメッキ層１５１の平均表面粗さが０．１μｍより小さい場合には、表面の凹部及び凸部は非常に小さくなり、その上に形成されることになる保護メッキ層１５２においても、形成される凹部及び凸部は非常に小さくなる。その結果、モールド部２５０との結合が弱くなり、ひいては保護メッキ層１５２とモールド部との接着性が低下する。したがって、粗面Ｃｕメッキ層１５１の表平均面粗度は、０．１μｍであることが望ましい。   When the average surface roughness of the rough surface Cu plating layer 151 is smaller than 0.1 μm, the concave and convex portions on the surface become very small, and the protective plating layer 152 to be formed thereon is also formed. The concave and convex portions to be made are very small. As a result, the bond with the mold part 250 becomes weak, and as a result, the adhesiveness between the protective plating layer 152 and the mold part decreases. Therefore, the surface average surface roughness of the rough surface Cu plating layer 151 is desirably 0.1 μm.

さらに、粗面Ｃｕメッキ層１５１の平均表面粗さが０．５μｍより大きい場合には、粗面Ｃｕメッキ層１５１の表面が不安定になるので、粗面Ｃｕメッキ層１５１が部分的に剥離し得る。したがって、粗面Ｃｕメッキ層１５１の表面粗さを０．５μｍに等しいかそれ以下であることが望ましい。   Furthermore, when the average surface roughness of the rough surface Cu plating layer 151 is larger than 0.5 μm, the surface of the rough surface Cu plating layer 151 becomes unstable, so that the rough surface Cu plating layer 151 is partially peeled off. obtain. Therefore, it is desirable that the surface roughness of the rough surface Cu plating layer 151 is equal to or less than 0.5 μm.

図４Ｄ及び図４Ｅを参照すると、保護メッキ層１５２は、粗面Ｃｕメッキ層１５１の凸凹表面上に形成される。それにより、メッキ層１５０が完成し、リードフレーム１００が完成する。   Referring to FIGS. 4D and 4E, the protective plating layer 152 is formed on the uneven surface of the rough surface Cu plating layer 151. Thereby, the plating layer 150 is completed, and the lead frame 100 is completed.

粗面Ｃｕメッキ層１５１は、所定の平均表面粗さを有する凸凹表面を呈する。保護メッキ層１５２は、粗面Ｃｕメッキ層１５１の凸凹表面上に形成され、粗面Ｃｕメッキ層１５１の凸凹表面に対応する凸凹表面を有する。換言すれば、保護メッキ層１５２の平均表面粗さは、粗面Ｃｕメッキ層１５１と同様に、約０．１μｍないし約０．５μｍであり得る。   The rough surface Cu plating layer 151 presents an uneven surface having a predetermined average surface roughness. The protective plating layer 152 is formed on the uneven surface of the rough surface Cu plating layer 151, and has an uneven surface corresponding to the uneven surface of the rough surface Cu plating layer 151. In other words, the average surface roughness of the protective plating layer 152 may be about 0.1 μm to about 0.5 μm, similar to the rough surface Cu plating layer 151.

粗面Ｃｕメッキ層１５１は、高電流での急速な成長を通じて形成されるので、被メッキ物との接着性が損なわれる。換言すれば、粗面Ｃｕメッキ層１５１とダイパッド１１０及びリード部１２０との接着性が損なわれる。本実施形態においては、保護メッキ層１５２が粗面Ｃｕメッキ層１５１上に形成され、粗面Ｃｕメッキ層１５１とダイパッド１１０及びリード部１２０との接着性を向上させる。その結果、粗面Ｃｕメッキ層１５１は、容易に固定され、外部物質から保護される。Ｃｕメッキ層は、様々な金属元素で形成され得る。保護メッキ層１５２は、粗面Ｃｕメッキ層１５１上で成長しながら粗面Ｃｕメッキ層１５１の接着性を強化するので、メッキ層１５０の表面は、保護層なしでリードフレームの表面から直接成長させられる粗面メッキ層の表面と比較すると、よりフレキシブルであり得る。従って、メッキ層１５０は、ワイヤボンディング工程においてボンディング強度を強化し得る。 Since the rough surface Cu plating layer 151 is formed through rapid growth at a high current, adhesion to the object to be plated is impaired. In other words, the adhesion between the rough surface Cu plating layer 151 and the die pad 110 and the lead portion 120 is impaired. In the present embodiment, the protective plating layer 152 is formed on the rough surface Cu plating layer 151 and improves the adhesion between the rough surface Cu plating layer 151 and the die pad 110 and the lead part 120. As a result, the rough surface Cu plating layer 151 is easily fixed and protected from external substances. The Cu plating layer can be formed of various metal elements. The protective plating layer 152 enhances the adhesion of the rough surface Cu plating layer 151 while growing on the rough surface Cu plating layer 151. Therefore, the surface of the plating layer 150 is grown directly from the surface of the lead frame without the protective layer. Compared to the surface of the resulting rough plating layer, it can be more flexible. Accordingly, the plating layer 150 can enhance the bonding strength in the wire bonding process.

保護メッキ層１５２は、約０．１２５μｍないし約１．０μｍの厚さを有し得る。   The protective plating layer 152 may have a thickness of about 0.125 μm to about 1.0 μm.

保護メッキ層１５２の厚さが０．１２５μｍ未満であれば、粗面Ｃｕメッキ層１５１は容易に接着されることができない。したがって、保護メッキ層１５２の厚さは、０．１２５μｍに等しいかまたはそれ以上であることが望ましい。また、保護メッキ層１５２の厚さが１．０μｍを超えると、保護メッキ層１５２の表面が、粗面Ｃｕメッキ層１５１の凸凹表面に対応する平均表面粗さを有することが難しくなる。したがって、保護メッキ層１５２の厚さは、１．０μｍ以下であることが望ましい。   If the thickness of the protective plating layer 152 is less than 0.125 μm, the rough surface Cu plating layer 151 cannot be easily adhered. Therefore, the thickness of the protective plating layer 152 is desirably equal to or greater than 0.125 μm. Moreover, when the thickness of the protective plating layer 152 exceeds 1.0 μm, it is difficult for the surface of the protective plating layer 152 to have an average surface roughness corresponding to the uneven surface of the rough Cu plating layer 151. Therefore, the thickness of the protective plating layer 152 is preferably 1.0 μm or less.

保護メッキ層１５２は、多様な金属を含有し得る。また、保護メッキ層１５２は、以下に述べる理由により銅を含有することが望ましい。   The protective plating layer 152 can contain various metals. The protective plating layer 152 preferably contains copper for the following reason.

第一に、保護メッキ層１５２が銅でできている場合に、保護メッキ層１５２の下の粗面Ｃｕメッキ層１５１をシード層として用いることによって、メッキ工程が容易に行われる。さらに、保護メッキ層１５２と粗面Ｃｕメッキ層１５１との接着性が向上する。さらに、銅粒子は、凸凹表面を有する粗面Ｃｕメッキ層１５１をシード層として用いることによって成長し、保護メッキ層１５２を形成するので、粗面Ｃｕメッキ層１５１の凸凹表面に対応する所定の平均表面粗さ値を有するように保護メッキ層１５２の凸凹表面を形成することは容易かつ迅速にできる。換言すれば、保護メッキは、メッキされる物体の実質的に全表面上で迅速に行われる粗面シードメッキの後に行われるので、粗面メッキ層は、先行技術と比較して、より迅速に形成されることができ、かつより均一な表面粗さを有する。 First, when the protective plating layer 152 is made of copper, the roughening Cu plating layer 151 below the protective plating layer 152 is used as a seed layer, thereby facilitating the plating process. Furthermore, the adhesion between the protective plating layer 152 and the rough surface Cu plating layer 151 is improved. Further, since the copper particles grow by using the rough surface Cu plating layer 151 having the uneven surface as a seed layer to form the protective plating layer 152, the predetermined average corresponding to the uneven surface of the rough surface Cu plating layer 151 is obtained. The uneven surface of the protective plating layer 152 can be easily and quickly formed to have a surface roughness value. In other words, since the protective plating is performed after the rough surface seed plating that is performed rapidly on substantially the entire surface of the object to be plated, the rough surface plating layer is more quickly compared to the prior art. Can be formed and has a more uniform surface roughness.

しかし、本発明は、これに限定されない。保護メッキ層１５２は、ＮｉまたはＮｉ合金を含有するＮｉメッキ層／ＰｄまたはＰｄ合金を含有するＰｄメッキ層／ＡｕまたはＡｕ合金を含有するＡｕメッキ層からなる積層構造の層であり得る。これについての詳細な内容は、前述した通りである。本実施形態に従って製造されたリードフレーム１００は、多様な半導体パッケージに適用できる。   However, the present invention is not limited to this. The protective plating layer 152 may be a layer having a laminated structure of Ni plating layer containing Ni or Ni alloy / Pd plating layer containing Pd or Pd alloy / Au plating layer containing Au or Au alloy. Details of this are as described above. The lead frame 100 manufactured according to the present embodiment can be applied to various semiconductor packages.

図５Ａ及び図５Ｂは、本発明の一実施形態によるリードフレームの製造方法を用いて、半導体パッケージの製造方法を説明するための断面図である。   5A and 5B are cross-sectional views for explaining a semiconductor package manufacturing method using the lead frame manufacturing method according to an embodiment of the present invention.

半導体パッケージの製造方法は、図４Ａないし図４Ｅに示した工程を含むので、これらについての詳細な説明は省略し、その後の工程について以下に説明する。   Since the semiconductor package manufacturing method includes the steps shown in FIGS. 4A to 4E, detailed description thereof will be omitted, and the subsequent steps will be described below.

図５Ａを参照すると、半導体チップ２００がダイパッド１１０上に搭載されている。図示していないが、半導体チップ２００を支障なく搭載するために、半導体チップ２００とメッキ層１５０の間に接着剤層を介在させることができる。   Referring to FIG. 5A, the semiconductor chip 200 is mounted on the die pad 110. Although not shown, an adhesive layer can be interposed between the semiconductor chip 200 and the plating layer 150 in order to mount the semiconductor chip 200 without hindrance.

半導体チップ２００及びリード部１２０は、ボンディングワイヤ２２０を用いて接続される。安定したボンディングのために、リード部１２０の上の保護メッキ層１５２上にＡｇメッキ層１６０が選択的に形成され得る。Ａｇメッキ層１６０は、ボンディングワイヤ２２０と接触しているので、ボンディングワイヤ２２０とリード部１２０間の接着の信頼性が向上する。本発明はこれに限定されず、選択的メッキ層１６０は、選択的に、Ａｕメッキ層であり得るか、またはニッケル（Ｎｉ）／パラジウム（Ｐｄ）／金（Ａｕ）積層構造を有するメッキ層であり得る。特に、上記した構造を有するメッキ層は、保護メッキ層１５２がＣｕを含有する場合に保護メッキ層１５２上に形成され得る。ここで、Ｎｉ／Ｐｄ／Ａｕ積層構造を有するメッキ層は、保護メッキ層１５２の選択された部分上に形成される代わりに、リード部１２０上の保護メッキ層１５２の上面全体に形成され得る。ここで、Ａｕメッキ層は、ＡｇまたはＰｄを含有し得る。その詳細な説明は、前述した通りである。   The semiconductor chip 200 and the lead part 120 are connected using a bonding wire 220. An Ag plating layer 160 may be selectively formed on the protective plating layer 152 on the lead part 120 for stable bonding. Since the Ag plating layer 160 is in contact with the bonding wire 220, the adhesion reliability between the bonding wire 220 and the lead portion 120 is improved. The present invention is not limited to this, and the selective plating layer 160 may selectively be an Au plating layer or a plating layer having a nickel (Ni) / palladium (Pd) / gold (Au) laminated structure. possible. In particular, the plating layer having the above-described structure can be formed on the protective plating layer 152 when the protective plating layer 152 contains Cu. Here, the plating layer having the Ni / Pd / Au laminated structure may be formed on the entire upper surface of the protective plating layer 152 on the lead part 120 instead of being formed on a selected portion of the protective plating layer 152. Here, the Au plating layer may contain Ag or Pd. The detailed description thereof is as described above.

次に、図５Ｂを参照すると、モールド部２５０を用いて半導体チップ２００を封止することによって、半導体パッケージ３００が製造される。具体的には、半導体チップ２００が搭載されているリードフレーム１００を成形用樹脂の型内にセットし、ＥＭＣなどの樹脂を型内に注入し、樹脂を高温で硬化させる。それにより、モールド部２５０が形成される。リードフレーム１００の裏面を除いたリードフレーム１００の上面全体が樹脂で覆われるので、図５Ｂに示すような半導体チップ２００とリードフレーム１００とが互いと一体化した半導体パッケージ３００が形成される。   Next, referring to FIG. 5B, the semiconductor package 300 is manufactured by sealing the semiconductor chip 200 using the mold part 250. Specifically, the lead frame 100 on which the semiconductor chip 200 is mounted is set in a molding resin mold, a resin such as EMC is injected into the mold, and the resin is cured at a high temperature. Thereby, the mold part 250 is formed. Since the entire top surface of the lead frame 100 excluding the back surface of the lead frame 100 is covered with resin, a semiconductor package 300 in which the semiconductor chip 200 and the lead frame 100 are integrated with each other as shown in FIG. 5B is formed.

モールド部２５０は、保護メッキ層１５２と接触している。保護メッキ層１５２は、粗面Ｃｕメッキ層１５１の凸凹表面に対応する凸凹表面を有する。これにより、モールド部２５０と保護メッキ層１５２がより広い面積で互いに接触する際に生じる結合特性が増加し、モールド部２５０と保護メッキ層１５２間の接合性が向上する。その結果、モールド部２５０は封止性が向上し、ひいては半導体パッケージ３００の耐久性が向上する。   The mold part 250 is in contact with the protective plating layer 152. The protective plating layer 152 has an uneven surface corresponding to the uneven surface of the rough surface Cu plating layer 151. As a result, the bonding characteristics generated when the mold part 250 and the protective plating layer 152 come into contact with each other over a larger area are increased, and the bondability between the mold part 250 and the protective plating layer 152 is improved. As a result, the sealing performance of the mold part 250 is improved, and as a result, the durability of the semiconductor package 300 is improved.

図示していないが、外部に露出されているダイパッド１１０及びリード１２０の底面にＳｎメッキ層が形成され得る。そのようなＳｎメッキ工程中には、一般的な電気メッキ法を用いてダイパッド１１０及びリード１２０の表面上にＳｎまたはＳｎ合金のいずれかがメッキされる。   Although not shown, an Sn plating layer may be formed on the bottom surfaces of the die pad 110 and the lead 120 exposed to the outside. During the Sn plating process, either Sn or Sn alloy is plated on the surfaces of the die pad 110 and the lead 120 using a general electroplating method.

一方で、本発明の実施形態についてＱＦＮパッケージ及びそれに適用されるリードフレームに基づいて説明してきたが、本発明の技術的原理は、多様な他のリードフレーム構造にも適用され得ることはいうまでもない。   Meanwhile, although the embodiments of the present invention have been described based on the QFN package and the lead frame applied thereto, it goes without saying that the technical principle of the present invention can be applied to various other lead frame structures. Nor.

本発明について例示的な実施形態を参照しながら図示及び説明を行ってきたが、当業者であれば、以下の請求項によって画定される本発明の趣旨及び範囲から逸脱することなく多様な変形形態が可能であることが理解されよう。   While the invention has been illustrated and described with reference to illustrative embodiments, those skilled in the art will recognize that various modifications can be made without departing from the spirit and scope of the invention as defined by the following claims. It will be understood that this is possible.

本発明は、半導体パッケージ関連の技術分野に適用可能である。   The present invention is applicable to a technical field related to a semiconductor package.

１００ リードフレーム
１１０ ダイパッド
１２０ リード部
１５０ メッキ層
１５１ 粗面Ｃｕメッキ層
１５２ 保護メッキ層
１７０ アウターフレーム
１８０ 支持部
２００ 半導体チップ
２２０ ボンディングワイヤ
２５０ モールド部
３００ 半導体パッケージ DESCRIPTION OF SYMBOLS 100 Lead frame 110 Die pad 120 Lead part 150 Plating layer 151 Rough surface Cu plating layer 152 Protective plating layer 170 Outer frame 180 Support part 200 Semiconductor chip 220 Bonding wire 250 Mold part 300 Semiconductor package

Claims (14)

リードフレームであって、
半導体チップが搭載されるダイパッドと、
前記半導体チップに接続されるように配置される複数のリード部と、
前記ダイパッド及び前記各リード部の少なくとも片面に形成されるメッキ層とを備え、
前記メッキ層が、所定の表面粗さを有し、
前記メッキ層が、銅（Ｃｕ）を含有する粗面Ｃｕメッキ層と、該粗面Ｃｕメッキ層上に形成される保護メッキ層とを含み、
前記保護メッキ層が、Ｃｕを含有し、
前記リード部の上部の前記保護メッキ層上に、金（Ａｕ）メッキ層、及びニッケル（Ｎｉ）／パラジウム（Ｐｄ）／金（Ａｕ）積層構造を有するメッキ層からなる群から選択されるメッキ層をさらに備え、
前記Ａｕメッキ層または前記積層構造のＡｕ層が、ＡｇまたはＰｄを含有することを特徴とするリードフレーム。 A lead frame,
A die pad on which a semiconductor chip is mounted;
A plurality of lead portions arranged to be connected to the semiconductor chip;
A plating layer formed on at least one side of the die pad and each lead part,
The plating layer has a predetermined surface roughness;
The plating layer includes a rough surface Cu plating layer containing copper (Cu), and a protective plating layer formed on the rough surface Cu plating layer,
The protective plating layer contains Cu;
A plating layer selected from the group consisting of a gold (Au) plating layer and a plating layer having a nickel (Ni) / palladium (Pd) / gold (Au) laminated structure on the protective plating layer above the lead portion. Further comprising
The lead frame, wherein the Au plating layer or the Au layer of the laminated structure contains Ag or Pd. 前記保護メッキ層の厚さが、前記粗面Ｃｕメッキ層の厚さより大きいことを特徴とする請求項１に記載のリードフレーム。   The lead frame according to claim 1, wherein a thickness of the protective plating layer is larger than a thickness of the rough surface Cu plating layer. 前記ダイパッド及び前記リード部が、単体として一体化されていることを特徴とする請求項１に記載のリードフレーム。   The lead frame according to claim 1, wherein the die pad and the lead portion are integrated as a single body. 前記保護メッキ層の厚さが、０．１２５μｍ〜１．０μｍであることを特徴とする請求項１に記載のリードフレーム。 The lead frame according to claim 1, wherein the protective plating layer has a thickness of 0.125 μm to 1.0 μm. 前記保護メッキ層の表面粗さ（Ｒａ）が、０．１μｍ〜０．５μｍであることを特徴とする請求項１に記載のリードフレーム。 2. The lead frame according to claim 1, wherein the protective plating layer has a surface roughness (Ra) of 0.1 μm to 0.5 μm. リードフレームの製造方法であって、
（ａ）原料基板をパターニングして、ダイパッド及び複数のリード部を形成するステップと、
（ｂ）所定の表面粗さを有しかつ銅を含有する粗面Ｃｕメッキ層を前記ダイパッド及び前記各リード部の少なくとも片面に形成し、前記粗面Ｃｕメッキ層上に、保護メッキ層を形成するステップとを含み、
前記保護メッキ層が、Ｃｕを含有し、
前記リード部の上部の保護メッキ層上に、金（Ａｕ）メッキ層、及びニッケル（Ｎｉ）／パラジウム（Ｐｄ）／金（Ａｕ）積層構造を有するメッキ層からなる群から選択されるメッキ層を形成するステップをさらに含み、
前記Ａｕメッキ層または前記積層構造のＡｕ層が、ＡｇまたはＰｄを含有することを特徴とする方法。 A lead frame manufacturing method comprising:
(A) patterning the raw material substrate to form a die pad and a plurality of lead portions;
(B) A rough surface Cu plating layer having a predetermined surface roughness and containing copper is formed on at least one surface of the die pad and each lead portion, and a protective plating layer is formed on the rough surface Cu plating layer Including the steps of:
The protective plating layer contains Cu;
A plating layer selected from the group consisting of a gold (Au) plating layer and a plating layer having a nickel (Ni) / palladium (Pd) / gold (Au) laminated structure is formed on the protective plating layer on the lead portion. Further comprising forming,
The Au plating layer or the Au layer of the laminated structure contains Ag or Pd. 前記粗面Ｃｕメッキ層が、電解メッキ法を用いて硫酸銅溶液中で形成されることを特徴とする請求項６に記載の方法。 The method according to claim 6 , wherein the rough surface Cu plating layer is formed in a copper sulfate solution using an electrolytic plating method. 前記硫酸銅溶液が、硫酸及び硫酸銅５水和物（ＣｕＳＯ４・５Ｈ２Ｏ）を含有することを特徴とする請求項７に記載の方法。 The method according to claim 7 , wherein the copper sulfate solution contains sulfuric acid and copper sulfate pentahydrate (CuSO 4 .5H 2 O). 前記硫酸銅溶液中の前記硫酸の濃度が、２０ｍｌ／ｌ〜６０ｍｌ／ｌであることを特徴とする請求項８に記載の方法。 9. The method according to claim 8 , wherein the concentration of the sulfuric acid in the copper sulfate solution is 20 ml / l to 60 ml / l. 前記硫酸銅溶液中の前記硫酸銅５水和物（ＣｕＳＯ４・５Ｈ２Ｏ）の濃度が、１０ｇ／ｌ〜３０ｇ／ｌであることを特徴とする請求項８に記載の方法。 The method according to claim 8 , wherein a concentration of the copper sulfate pentahydrate (CuSO 4 .5H 2 O) in the copper sulfate solution is 10 g / l to 30 g / l. 前記粗面Ｃｕメッキ層が、５秒〜２０秒間の電流印加によって形成されることを特徴とする請求項７に記載の方法。 The method according to claim 7 , wherein the rough Cu plating layer is formed by applying a current for 5 to 20 seconds. 前記保護メッキ層の厚さが、前記粗面Ｃｕメッキ層の厚さより大きいことを特徴とする請求項６に記載のリードフレームの製造方法。 The lead frame manufacturing method according to claim 6 , wherein a thickness of the protective plating layer is larger than a thickness of the rough surface Cu plating layer. 前記保護メッキ層の厚さが、０．１２５μｍ〜１．０μｍであることを特徴とする請求項６に記載のリードフレームの製造方法。 The lead frame manufacturing method according to claim 6 , wherein the protective plating layer has a thickness of 0.125 μm to 1.0 μm. 前記保護メッキ層の表面粗さ（Ｒａ）が、０．１μｍ〜０．５μｍであることを特徴とする請求項６に記載のリードフレームの製造方法。 The lead frame manufacturing method according to claim 6 , wherein the protective plating layer has a surface roughness (Ra) of 0.1 μm to 0.5 μm.
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