JP5795974B2 - Manufacturing method of semiconductor manufacturing equipment - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus and a manufacturing method thereof.

  A semiconductor manufacturing apparatus is used for fixing a wafer or heating / cooling a wafer in an etching apparatus, an ion implantation apparatus, an electron beam exposure apparatus or the like. Such a semiconductor manufacturing apparatus includes a ceramic electrostatic chuck having a wafer mounting surface and a built-in electrostatic electrode, and a metal adhesive bonded to the surface of the electrostatic chuck opposite to the wafer mounting surface. The thing provided with the base member is known.

  Patent Document 1 discloses such a semiconductor manufacturing apparatus. As shown in FIG. 9, a semiconductor manufacturing apparatus 310 including an electrostatic chuck 320 and a base member 330 is used by connecting a chuck side terminal 340 to a terminal 382 of a processing apparatus 380 corresponding to a wafer processing purpose. The An electrode terminal 326 is connected to the chuck side terminal 340 via a flexible cable 336 to each of the electrostatic electrode 322 and the heater electrode 324 built in the electrostatic chuck 320. A partially enlarged view of such a chuck side terminal 340 is shown in FIG. A through hole 332 is provided at a position facing the electrode terminal 326 in the base member 330, and an insulating sleeve 334 is bonded to the inner peripheral surface of the through hole 332. Then, the male screw 340 a provided on the outer peripheral surface of the chuck side terminal 340 is screwed into the female screw 334 a provided on the inner peripheral surface of the insulating sleeve 334. By doing so, the chuck side terminal 340 is integrated with the flexible cable 336 connected to the electrode terminal 326 and is also integrated with the insulating sleeve 334.

JP 2008-98513 A

  However, in the semiconductor manufacturing apparatus 310 described above, since the end portion 334b on the electrostatic chuck side of the insulating sleeve 334 is assembled so as to be in contact with the electrostatic chuck 320, there are the following problems. That is, when the chuck-side terminal 340 is connected to the terminal 382 of the processing apparatus 380 with the base member 330 fixed to a support base (not shown), the chuck-side terminal 340 receives a force in a direction to be pushed into the electrostatic chuck side. At this time, since the insulating sleeve 334 is integrated with the chuck-side terminal 340, the insulating sleeve 334 receives a force in a direction in which the insulating sleeve 334 is also pushed into the electrostatic chuck side. Then, the end portion 334 b on the electrostatic chuck side of the insulating sleeve 334 may press the electrostatic chuck 320, and as a result, a gap may be generated between the electrostatic chuck 320 and the base member 330. If such a gap is generated, it is not preferable because a problem such as a problem in causing the heat of the electrostatic chuck 320 to escape to the base member 330 occurs.

  The present invention has been made to solve such problems. In a semiconductor manufacturing apparatus, even if a force is applied to a terminal on the semiconductor manufacturing apparatus side, the influence of the force is not exerted on the ceramic substrate. Main purpose.

  The semiconductor manufacturing apparatus and the manufacturing method thereof according to the present invention employ the following means in order to achieve the main object described above.

The semiconductor manufacturing apparatus of the present invention
A ceramic substrate having a wafer mounting surface and a built-in electrode;
A metal base member fixed to a surface opposite to the wafer mounting surface;
An electrode terminal provided on a surface of the ceramic substrate opposite to the wafer mounting surface and connected to the electrode;
A through hole provided at a position facing the electrode terminal in the base member;
An insulating sleeve fixed to the inner peripheral surface of the through hole;
A semiconductor manufacturing apparatus side terminal connected to the electrode terminal via a flexible cable and fixed to the insulating sleeve, and detachably connected to a terminal of another apparatus;
A semiconductor manufacturing apparatus comprising:
The base member has a latching portion that latches with a flange provided on the insulating sleeve and prevents the insulating sleeve from entering toward the back of the through hole,
The insulating sleeve is designed so that a tip is separated from the ceramic substrate in a state where the flange is hooked on the hook portion.

  In this semiconductor manufacturing apparatus, when connecting the semiconductor manufacturing apparatus side terminal to a terminal of a different apparatus from the semiconductor manufacturing apparatus with the base member supported on a separately prepared support base, the semiconductor manufacturing apparatus side terminal is connected to the ceramic substrate side. Receive the force of approaching. At this time, since the insulating sleeve is integrated with the semiconductor manufacturing apparatus side terminal, it similarly receives a force in a direction approaching the ceramic substrate side. However, the insulating sleeve is designed so that the tip (the end close to the ceramic substrate) is separated from the ceramic substrate in a state where the flange is hooked on the latching portion. For this reason, the tip of the insulating sleeve does not push the ceramic substrate away from the base member. As a result, there is no possibility that a gap is generated between the ceramic substrate and the base member.

  In the semiconductor manufacturing apparatus of the present invention, a gap between the tip of the insulating sleeve and the ceramic substrate may be filled with an insulating resin. In this way, it is possible to prevent the insulation from being broken from the gap between the sleeve and the ceramic substrate.

  In the semiconductor manufacturing apparatus of the present invention, the semiconductor manufacturing apparatus-side terminal has a male screw on an outer peripheral surface, and the male screw is fixed to a female screw directly provided on the inner peripheral surface of the insulating sleeve or the insulating sleeve. It may be fixed by being screwed into a female screw provided on the inner peripheral surface of the ring member.

The manufacturing method of the semiconductor manufacturing apparatus of the present invention is as follows:
(A) A semiconductor having an electrode terminal connected to a built-in electrode on the surface opposite to the wafer mounting surface, and connected to the electrode terminal via a flexible cable and provided with a male screw on the outer peripheral surface A ceramic substrate having a manufacturing apparatus side terminal and a base member having a through hole with a latching portion at a position facing the electrode terminal are prepared, and the semiconductor manufacturing apparatus side terminal is inserted into the through hole to form the ceramic A step of bonding the substrate and the base member with an adhesive;
(B) A flange is provided at the periphery, and the length from the tip to the flange is designed to be shorter than the length from the surface of the base member bonded to the ceramic substrate to the hooking portion, and the inner peripheral surface has a female Prepare an insulating sleeve with a screw, and insert the adhesive sleeve on the outer peripheral surface of the insulating sleeve from the tip to the through-hole until the flange is hooked to the hooking portion while rotating the insulating sleeve A step of screwing and fixing the male screw of the semiconductor manufacturing apparatus side terminal to the female screw of the insulating sleeve;
Including, or
(A) A semiconductor having an electrode terminal connected to a built-in electrode on the surface opposite to the wafer mounting surface, and connected to the electrode terminal via a flexible cable and provided with a male screw on the outer peripheral surface A ceramic substrate having a manufacturing apparatus side terminal and a base member having a through hole with a latching portion at a position facing the electrode terminal are prepared, and the semiconductor manufacturing apparatus side terminal is inserted into the through hole to form the ceramic A step of bonding the substrate and the base member with an adhesive;
(B) An insulating sleeve having a flange at the periphery and designed so that the length from the tip to the flange is shorter than the length from the surface of the base member bonded to the ceramic substrate to the hooking portion is prepared. A step of inserting the insulating sleeve into the through-hole from the tip until the flange is hooked on the hooking portion with an adhesive applied to the outer peripheral surface of the insulating sleeve;
(C) A ring member provided with a female screw on the inner peripheral surface and having an outer diameter that matches the inner diameter of the base end (end opposite to the tip) side of the insulating sleeve is prepared and bonded to the outer peripheral surface of the ring member By inserting the ring member into the insulating sleeve while rotating the ring member in a state where an agent is applied, the male screw of the semiconductor manufacturing apparatus side terminal is screwed and fixed to the female screw of the ring member, and the ring member and the Bonding the insulating sleeve;
Is included.

  In this way, a ceramic substrate having a semiconductor manufacturing apparatus side terminal connected in advance to the electrode terminal via a flexible cable can be prepared, and the semiconductor manufacturing apparatus can be assembled using the ceramic substrate. A semiconductor manufacturing apparatus can be assembled easily. Compared to this, when connecting the semiconductor manufacturing equipment side terminal to the flexible cable in the final process, connect the cable bent in the insulating sleeve, which is not enough space, and the semiconductor manufacturing equipment side terminal. Therefore, the connection work is not easy and there is a problem in workability.

1 is a broken sectional view showing an outline of a semiconductor manufacturing apparatus 10 of a first embodiment. 3 is a partially enlarged view of the vicinity of a chuck-side terminal of the semiconductor manufacturing apparatus 10. FIG. 4 is an assembly process diagram of the semiconductor manufacturing apparatus 10. FIG. 4 is an assembly process diagram of the semiconductor manufacturing apparatus 10. FIG. It is the elements on larger scale near the chuck | zipper side terminal of the semiconductor manufacturing apparatus 110 of 2nd Embodiment. FIG. 10 is an assembly process diagram of the semiconductor manufacturing apparatus 110. FIG. 10 is an assembly process diagram of the semiconductor manufacturing apparatus 110. FIG. 10 is an assembly process diagram of the semiconductor manufacturing apparatus 110. 2 is a broken sectional view showing an outline of a semiconductor manufacturing apparatus 310. FIG. FIG. 6 is a partially enlarged view near the chuck side terminal of the semiconductor manufacturing apparatus 310.

[First Embodiment]
FIG. 1 is a broken sectional view showing an outline of the semiconductor manufacturing apparatus 10 of the first embodiment, and FIG. 2 is a partially enlarged view of the vicinity of a chuck side terminal of the semiconductor manufacturing apparatus 10.

  As shown in FIG. 1, the semiconductor manufacturing apparatus 10 includes an electrostatic chuck 20 having a wafer mounting surface S and a built-in electrostatic electrode 22 and a heater electrode 24, and a wafer mounting surface of the electrostatic chuck 20. A metal base member 30 fixed to the surface (back surface) opposite to S by an adhesive, and a chuck-side terminal 40 connected to each of the electrostatic chuck 20 and the heater electrode 24 are provided. . The electrostatic chuck 20 corresponds to the ceramic substrate in the present invention, and the chuck side terminal 40 corresponds to the semiconductor manufacturing apparatus side terminal in the present invention.

  The electrostatic chuck 20 is a disk-shaped member made of a ceramic sintered body (for example, an alumina ceramic sintered body), and an electrostatic electrode that attracts the wafer placed on the wafer placement surface S by electrostatic force therein. 22 and a heater electrode 24 that generates heat when a voltage is applied are embedded. A plurality of electrode terminals 26 are provided on the back surface of the electrostatic chuck 20. The electrode terminal 26 includes one connected to the electrostatic electrode 22 and one connected to the heater electrode 24.

  The base member 30 is a disk-shaped member made of metal (for example, aluminum alloy), and has a through hole 32 at a position facing each electrode terminal 26. The base member 30 serves to cool the electrostatic chuck 20 and has a cooling water passage (not shown) formed therein.

  The chuck side terminal 40 is a female connector and is provided in each through hole 32 of the base member 30. As shown in FIG. 2, the chuck side terminal 40 is connected to the electrode terminal 26 via a flexible cable 36. The cable 36 is accommodated in a space between the chuck side terminal 40 and the electrode terminal 26 in a bent state. The through hole 32 has a small diameter portion 32a on the side close to the electrostatic chuck 20 and a large diameter portion 32b on the side far from the electrostatic chuck 20, and has a step 32c between the small diameter portion 32a and the large diameter portion 32b. Yes. An insulating sleeve 34 is inserted into the through hole 32, and the inner peripheral surface of the through hole 32 and the outer peripheral surface of the insulating sleeve 34 are fixed with an adhesive. In addition, the level | step difference 32c provided in the inside of the through-hole 32 is equivalent to the latching | locking part of this invention.

  The insulating sleeve 34 has a flange 34 a that engages with the step 32 c of the through hole 32. The length L from the tip 34b of the insulating sleeve 34 to the flange 34a is the depth D of the small diameter portion 32a of the through hole 32 (the length from the surface of the base member 30 bonded to the electrostatic chuck 20 to the step 32c). ) Designed to be shorter. Therefore, in a state where the flange 34 a of the insulating sleeve 34 is hooked on the step 32 c of the through hole 32, the tip 34 b (end near the electrostatic chuck 20) of the insulating sleeve 34 is separated from the electrostatic chuck 20. Yes. Such an insulating sleeve 34 is made of an electrically insulating material such as a ceramic material or a resin material. A chuck side terminal 40 is screwed inside the insulating sleeve 34. Specifically, a male screw 40 a provided in the center of the outer periphery of the chuck-side terminal 40 is screwed and fixed to a female screw 34 c provided on the inner periphery of the insulating sleeve 34. A gap between the tip 34 b of the insulating sleeve 34 and the electrostatic chuck 20 is filled with an insulating resin 38. This insulating resin 38 also enters the inside of the insulating sleeve 34.

  The semiconductor manufacturing apparatus 10 is used by being connected to a processing apparatus 80 (see FIG. 1, corresponding to another apparatus) according to the processing purpose of the wafer. The processing apparatus 80 is provided with a processing apparatus side terminal 82 (male connector) at a position facing each chuck side terminal 40 (female connector) of the semiconductor manufacturing apparatus 10. When the semiconductor manufacturing apparatus 10 is connected to the processing apparatus 80, the terminals facing each other are connected in a state where the base member 30 is fixed to a support base (not shown). At this time, a force in a direction approaching the electrostatic chuck 20 is applied to the chuck side terminal 40. Since the insulating sleeve 34 is integrated with the chuck side terminal 40, the insulating sleeve 34 receives a force in a direction approaching the electrostatic chuck 20. However, the insulating sleeve 34 has a flange 34a that is hooked on the step 32c of the through hole 32, and the tip 34b is designed to be separated from the electrostatic chuck 20 when the flange 34a is hooked on the step 32c. Yes. For this reason, the tip 34 b of the insulating sleeve 34 does not push the electrostatic chuck 20 away from the base member 30. Even if the insulating resin 38 is pressed toward the electrostatic chuck by the tip 34 b of the insulating sleeve 34, the insulating resin 38 deforms itself and absorbs the pressure, and therefore hardly exerts a force on the electrostatic chuck 20. Further, even if the cable 36 is pressed toward the electrostatic chuck by the chuck-side terminal 40, the cable 36 is bent and absorbs the pressure, so that the cable 36 hardly exerts a force on the electrostatic chuck 20. As a result, even if the chuck-side terminal 40 and the processing apparatus-side terminal 82 are repeatedly inserted and removed, there is no possibility that a gap will be generated between the electrostatic chuck 20 and the base member 30 due to this.

  Next, a manufacturing method of the semiconductor manufacturing apparatus 10 will be described. 3 and 4 are assembly process diagrams of the semiconductor manufacturing apparatus 10.

  First, an electrostatic chuck 20 shown in FIG. 3 is prepared. A chuck side terminal 40 is connected in advance to the electrode terminal 26 of the electrostatic chuck 20 via a flexible cable 36. On the other hand, a base member 30 provided with a through hole 32 with a step 32c is also prepared. Then, an adhesive is applied to the back surface of the electrostatic chuck 20 so that the opening of the small diameter portion 32a of the through hole 32 faces the chuck side terminal 40, and the chuck side terminal 40 is inserted into the through hole 32 and electrostatic The chuck 20 and the base member 30 are attached.

  Next, an insulating sleeve 34 is prepared. Then, a flexible insulating resin 38 is injected into the through hole 32 of the base member 30 on the electrostatic chuck side. Next, the insulating sleeve 34 is inserted into the through-hole 32 from the tip 34 b while rotating the insulating sleeve 34 in a state where an adhesive is applied to the outer peripheral surface of the insulating sleeve 34. At this time, the chuck side terminal 40 is fixed so as not to rotate. Specifically, a cross groove (not shown) is provided in the head of the chuck side terminal 40, and the tip of a plus driver is inserted into the cross groove and fixed so as not to rotate. Then, since the insulating sleeve 34 rotates with respect to the chuck side terminal 40 that is prevented from rotating, the male screw 40 a of the chuck side terminal 40 is screwed into the female screw 34 c of the insulating sleeve 34. At this time, since the insulating resin 38 and the cable 36 have flexibility and flexibility, they hardly exert a force on the electrostatic chuck 20. Finally, the flange 34a is engaged with the step 32c of the through hole 32, and the male screw 40a is completely screwed into the female screw 34c. The semiconductor manufacturing apparatus 10 is completed through the above steps.

  According to the semiconductor manufacturing apparatus 10 described in detail above, even when the chuck side terminal 40 is pressed to the back of the through hole 32 when connecting the chuck side terminal 40 and the processing apparatus side terminal 82, the tip of the insulating sleeve 34. 34 b does not push the electrostatic chuck 20 away from the base member 30. As a result, there is no possibility that a gap is generated between the electrostatic chuck 20 and the base member 30.

  Also, since the gap between the tip 34 b of the insulating sleeve 34 and the electrostatic chuck 20 is filled with a flexible insulating resin 38, the insulation is broken from the gap between the insulating sleeve 34 and the electrostatic chuck 20. Can be prevented.

  Furthermore, an electrostatic chuck 20 having a chuck side terminal 40 connected in advance to the electrode terminal 26 via a flexible cable 36 is prepared, and the semiconductor manufacturing apparatus 10 can be assembled using the electrostatic chuck 20. Therefore, the semiconductor manufacturing apparatus 10 can be assembled relatively easily. Further, since the cable 36 is not twisted when the chuck-side terminal 40 is attached to the insulating sleeve 34, the joint portion between the electrode terminal 26 and the cable 36 is not twisted. On the other hand, as shown in FIG. 10, for example, when the chuck side terminal 340 is connected to the flexible cable 336 in the final process, there is flexibility in the insulating sleeve 334 which is not enough space. Since the cable 336 and the chuck-side terminal 340 are connected, the connection work is not easy and there is a problem in workability.

[Second Embodiment]
FIG. 5 is a partially enlarged view of the vicinity of the chuck side terminal of the semiconductor manufacturing apparatus 110 of the second embodiment. The semiconductor manufacturing apparatus 110 has substantially the same structure as that of the semiconductor manufacturing apparatus 10 except that the structures of the chuck side terminal 140 and the insulating sleeve 134 are different. For this reason, the same components as those of the semiconductor manufacturing apparatus 10 are denoted by the same reference numerals and description thereof is omitted, and different components will be described below.

  The chuck side terminal 140 is a female connector and is provided in each through hole 32 of the base member 30. The chuck side terminal 140 is connected to the electrode terminal 26 via a flexible cable 36. An insulating sleeve 134 is inserted into the through hole 32, and the inner peripheral surface of the through hole 32 and the outer peripheral surface of the insulating sleeve 134 are fixed with an adhesive.

  The insulating sleeve 134 has a flange 134 a that engages with the step 32 c of the through hole 32. The length L from the tip 134b of the insulating sleeve 134 to the flange 134a is the depth D of the small diameter portion 32a of the through hole 32 (the length from the surface of the base member 30 bonded to the electrostatic chuck 20 to the step 32c). ) Designed to be shorter. Therefore, in a state where the flange 134a of the insulating sleeve 134 is hooked on the step 32c of the through hole 32, the tip 134b of the insulating sleeve 134 (the end near the electrostatic chuck 20) is separated from the electrostatic chuck 20. Yes. Such an insulating sleeve 134 is made of an electrically insulating material such as a ceramic material or a resin material. A chuck side terminal 140 is fixed inside the insulating sleeve 134. Specifically, a recess 134c is provided on the inner periphery of the flange 134a of the insulating sleeve 134, and the outer periphery of the ring member 150 is fixed to the inner periphery of the recess 134c with an adhesive. That is, the inner diameter of the recess 134c (the inner diameter of the base end side of the insulating sleeve 134) substantially matches the outer diameter of the ring member 150. A female screw 150 a is provided on the inner peripheral surface of the ring member 150. A male screw 140 a provided on the outer periphery of the opening of the chuck side terminal 140 is fixed by being screwed into the female screw 150 a of the ring member 150.

  Since the usage example of this semiconductor manufacturing apparatus 110 is the same as that of the semiconductor manufacturing apparatus 10 of 1st Embodiment, the description is abbreviate | omitted here.

  Next, a manufacturing method of the semiconductor manufacturing apparatus 10 will be described. 6 to 8 are assembly process diagrams of the semiconductor manufacturing apparatus 110.

  First, an electrostatic chuck 20 shown in FIG. 6 is prepared. A chuck side terminal 140 is connected in advance to the electrode terminal 26 of the electrostatic chuck 20 via a flexible cable 36. A male screw 140 a is provided on the outer peripheral surface of the chuck side terminal 140 on the opening side. On the other hand, a base member 30 provided with a through hole 32 with a step 32c is also prepared. Then, an adhesive is applied to the back surface of the electrostatic chuck 20 so that the opening of the small diameter portion 32a of the through hole 32 faces the chuck side terminal 140, and the chuck side terminal 140 is inserted into the through hole 32 and electrostatic The chuck 20 and the base member 30 are attached.

  Next, an insulating sleeve 134 shown in FIG. 7 is prepared. Then, a flexible insulating resin 38 is injected into the through hole 32 of the base member 30 on the electrostatic chuck side. Subsequently, the insulating sleeve 134 is inserted into the through hole 32 from the tip 134 b in a state where an adhesive is applied to the outer peripheral surface of the insulating sleeve 134. As a result, the insulating sleeve 134 is fixed to the through hole 32. Note that the insulating resin 38 is rich in flexibility and hardly exerts a force on the electrostatic chuck 20.

  Next, as shown in FIG. 8, a ring member 150 having an internal thread 150a on the inner peripheral surface is prepared. A cross groove (not shown) is provided at the head of the chuck-side terminal 140, and the tip of a plus driver is inserted into the cross groove and fixed so as not to rotate. In this state, the ring member 150 is inserted into the chuck side terminal 140 while rotating. Then, since the ring member 150 rotates with respect to the chuck side terminal 140 that is prevented from rotating, the male screw 140a of the chuck side terminal 140 is screwed into the female screw 150a of the ring member 150. Thereafter, an adhesive is applied to the outer peripheral surface of the ring member 150, and the ring member 150 is fitted into and fixed to the recess 134c. At this time, the chuck-side terminal 140 approaches the electrode terminal 26, but the cable 36 is bent by itself, so that almost no force is applied to the electrostatic chuck 20. The semiconductor manufacturing apparatus 110 is completed through the above steps.

  According to the semiconductor manufacturing apparatus 110 described in detail above, even when the chuck side terminal 140 is pressed to the back of the through hole 32 when connecting the chuck side terminal 140 and the processing apparatus side terminal 82, the tip of the insulating sleeve 134. 134 b does not push the electrostatic chuck 20 away from the base member 30. As a result, there is no possibility that a gap is generated between the electrostatic chuck 20 and the base member 30.

  Also, since the gap between the tip 134b of the insulating sleeve 134 and the electrostatic chuck 20 is filled with a flexible insulating resin 38, the insulation is broken from the gap between the insulating sleeve 134 and the electrostatic chuck 20. Can be prevented.

  Furthermore, an electrostatic chuck 20 having a chuck-side terminal 140 connected in advance to the electrode terminal 26 via a flexible cable 36 is prepared, and the semiconductor manufacturing apparatus 110 can be assembled using the electrostatic chuck 20. Therefore, the semiconductor manufacturing apparatus 110 can be assembled relatively easily. In addition, since the cable 36 is not twisted when the chuck-side terminal 140 is attached to the insulating sleeve 134 using the ring member 150, the joint portion between the electrode terminal 26 and the cable 36 is not twisted. Further, when the chuck side terminal 140 is removed from the insulating sleeve 134, it can be removed by rotating the ring member 150 without rotating the chuck side terminal 140, so that the joint portion between the electrode terminal 26 and the cable 36 is twisted. Does not occur.

  It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that the present invention can be implemented in various modes as long as it belongs to the technical scope of the present invention.

  For example, in the above-described embodiment, the chuck side terminals 40 and 140 are female connectors and the processing apparatus side terminals 82 are male connectors. However, the chuck side terminals 40 and 140 are male connectors and the processing apparatus side terminals 82 are used. May be a female connector.

  In the embodiment described above, in the manufacturing process of the semiconductor manufacturing apparatuses 10 and 110, a cross groove (not shown) is provided on the heads of the chuck side terminals 40 and 140, and the tip of a plus driver is inserted into the cross groove so as not to rotate. Although it fixed, the structure which fixes the chuck | zipper side terminals 40 and 140 so that it may not rotate is not limited to this, What kind of structure may be sufficient.

  In the above-described embodiment, the electrostatic chuck 20 including the electrostatic electrode 22 and the heater electrode 24 is employed as the ceramic substrate. However, an electrostatic chuck including the electrostatic electrode but not including the heater electrode is employed. Alternatively, a ceramic heater that incorporates a heater electrode but does not incorporate an electrostatic electrode may be employed.

  In the above-described embodiment, the step 32c is provided inside the through hole 32. However, the through hole 32 is a straight hole having no step 32c (the inner diameter is the diameter of the small diameter portion 32b) and insulated from the opening edge of the through hole 32. It is good also as a structure which latches the flange 34a of the sleeve 34. FIG. In that case, the opening edge of the through hole 32 corresponds to the latching portion of the present invention. Note that the latching portion is preferably on the processing apparatus side in the thickness direction of the base member 30. In this way, even if the insulating sleeves 34 and 134 are pressed, the base member 30 is distorted, and the electrostatic chuck 20 (ceramic member) is not pressed.

  In the above-described embodiment, the flanges 34a and 134a are provided on the opening peripheral edge of the base end side of the insulating sleeves 34 and 134. Instead of providing the flanges 34a and 134a on the opening peripheral edge, an annular protrusion is provided around the trunk of the insulating sleeves 34 and 134. You may provide so that it may become.

  The semiconductor manufacturing apparatus 10 of the first embodiment, the semiconductor manufacturing apparatus 110 of the second embodiment, and the conventional semiconductor manufacturing apparatus 310 were produced. Each apparatus 10, 110, 310 has the same size of electrostatic chuck and the same number of electrode terminals. The base member is also the same size, and the number of through holes in the base member is the same as the number of electrode terminals. The same adhesive was used. Furthermore, for the apparatuses 10 and 110, an evaluation chamber having the same form as the processing apparatus 80 was prepared, and for the apparatus 310, an evaluation chamber having the same form as the processing apparatus 380 was prepared.

  Then, each apparatus 10, 110, 310 is mounted in a corresponding evaluation chamber, and the ceramic temperature is set to 80 ° C. (heating using a heater electrode) in an atmosphere with a pressure of less than 10 Pa. The temperature of the refrigerant to be circulated was set to 50 ° C., and the temperature of the electrostatic chuck surface (wafer mounting surface) immediately above the electrode terminal was measured using an IR camera. The temperature at this time was defined as the initial temperature. Subsequently, after each device 10, 110, 310 was attached / detached to / from the corresponding evaluation chamber three times using a dedicated attachment / detachment jig, the temperature was measured under the same conditions as when the initial temperature was measured. Then, the temperature level after the attachment / detachment three times with respect to the initial temperature was examined. Further, the number of attachments / detachments was increased to 10 times, and the temperature was measured in the same manner, and the temperature level after attachment / detachment 10 times with respect to the initial temperature was examined. The results are shown in Table 1.

  As is apparent from Table 1, in the semiconductor manufacturing apparatus 310 having the conventional structure, the bonding between the electrostatic chuck and the base member is peeled off by repeatedly attaching and detaching, and the temperature of the wafer mounting surface immediately above the electrode terminal is increased. . On the other hand, in the semiconductor manufacturing apparatuses 10 and 110 according to the first and second embodiments, even when the attachment and detachment are repeated, the junction between the electrostatic chuck and the base member is not peeled off, and the wafer mounting surface directly above the electrode terminal is not observed. The temperature did not change.

DESCRIPTION OF SYMBOLS 10 Semiconductor manufacturing apparatus, 20 Electrostatic chuck, 22 Electrostatic electrode, 24 Heater electrode, 26 Electrode terminal, 30 Base member, 32 Through hole, 32a Small diameter part, 32b Large diameter part, 32c Level difference, 34 Insulating sleeve, 34a Flange, 34b tip, 34c female screw, 36 cable, 38 insulating resin, 40 chuck side terminal, 40a male screw, 80 processing device, 82 processing device side terminal, 110 semiconductor manufacturing device, 134 insulating sleeve, 134a flange, 134b tip, 134c recess , 140 chuck side terminal, 140a male screw, 150 ring member, 150a female screw, 310 semiconductor manufacturing apparatus, 320 electrostatic chuck, 322 electrostatic electrode, 324 heater electrode, 326 electrode terminal, 330 base member, 332 through hole, 334 Insulation sleeve, 3 4a female thread, 334b ends 336 cable, 340 chuck-side terminals, 340a male thread, 380 processing unit, 382 terminal, S wafer mounting surface

Claims (2)

(A) A semiconductor having an electrode terminal connected to a built-in electrode on the surface opposite to the wafer mounting surface, and connected to the electrode terminal via a flexible cable and provided with a male screw on the outer peripheral surface A ceramic substrate having a manufacturing apparatus side terminal and a base member having a through hole with a latching portion at a position facing the electrode terminal are prepared, and the semiconductor manufacturing apparatus side terminal is inserted into the through hole to form the ceramic A step of bonding the substrate and the base member with an adhesive;
(B) A flange is provided at the periphery, and the length from the tip to the flange is designed to be shorter than the length from the surface of the base member bonded to the ceramic substrate to the hooking portion, and the inner peripheral surface has a female Prepare an insulating sleeve with a screw, and insert the adhesive sleeve on the outer peripheral surface of the insulating sleeve from the tip to the through-hole until the flange is hooked to the hooking portion while rotating the insulating sleeve A step of screwing and fixing the male screw of the semiconductor manufacturing apparatus side terminal to the female screw of the insulating sleeve;
Of semiconductor manufacturing equipment including (A) A semiconductor having an electrode terminal connected to a built-in electrode on the surface opposite to the wafer mounting surface, and connected to the electrode terminal via a flexible cable and provided with a male screw on the outer peripheral surface A ceramic substrate having a manufacturing apparatus side terminal and a base member having a through hole with a latching portion at a position facing the electrode terminal are prepared, and the semiconductor manufacturing apparatus side terminal is inserted into the through hole to form the ceramic A step of bonding the substrate and the base member with an adhesive;
(B) An insulating sleeve having a flange at the periphery and designed so that the length from the tip to the flange is shorter than the length from the surface of the base member bonded to the ceramic substrate to the hooking portion is prepared. A step of inserting the insulating sleeve into the through-hole from the tip until the flange is hooked on the hooking portion with an adhesive applied to the outer peripheral surface of the insulating sleeve;
(C) A ring member having a female screw on the inner peripheral surface and having an outer diameter that matches the inner diameter of the base end side of the insulating sleeve is prepared, and the ring member is coated with an adhesive on the outer peripheral surface of the ring member. Inserting the male screw of the semiconductor manufacturing apparatus side terminal into the female screw of the ring member and fixing the male screw of the semiconductor manufacturing apparatus to the female screw of the ring member, and bonding the ring member and the insulating sleeve;
Of semiconductor manufacturing equipment including

Images