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JP5578101B2 - Manufacturing method of wire bonding structure - Google Patents

Manufacturing method of wire bonding structure Download PDF

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JP5578101B2
JP5578101B2 JP2011025910A JP2011025910A JP5578101B2 JP 5578101 B2 JP5578101 B2 JP 5578101B2 JP 2011025910 A JP2011025910 A JP 2011025910A JP 2011025910 A JP2011025910 A JP 2011025910A JP 5578101 B2 JP5578101 B2 JP 5578101B2
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bonding
case
wire bonding
bonded
hot plate
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JP2012164918A (en
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景介 中野
格 石井
昌明 田中
為治 太田
丈司 篠田
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

本発明は、被ボンディング部材のボンディングパッドにワイヤボンディングしてなるワイヤボンディング構造体の製造方法に関する。   The present invention relates to a method of manufacturing a wire bonding structure formed by wire bonding to a bonding pad of a member to be bonded.

一般に、この種の製造方法では、一面にボンディングパッドを有する半導体チップや配線基板などの被ボンディング部材を用意し、ボンディングパッドにワイヤボンディングを行ってワイヤを接続することにより、ワイヤボンディング構造体を製造する。   In general, in this type of manufacturing method, a member to be bonded such as a semiconductor chip having a bonding pad on one side or a wiring board is prepared, and wire bonding is performed on the bonding pad to manufacture a wire bonding structure. To do.

ここで、ボンディングを行う際、接合性を得るためにボンディングパッドの温度を上げておく必要があるが、従来では、ボンディングパッドが存在する一面を上に向けた状態で被ボンディング部材を熱板上に搭載し、被ボンディング部材の全体を加熱することでボンディングパッドの加熱を行うようにしている（たとえば、特許文献１参照）。   Here, when performing bonding, it is necessary to raise the temperature of the bonding pad in order to obtain bonding properties. Conventionally, the member to be bonded is placed on the hot plate with one surface where the bonding pad is present facing up. The bonding pad is heated by heating the entire member to be bonded (see, for example, Patent Document 1).

しかしながら、この方法では、被ボンディング部材において、ボンディングパッドが位置する一面は熱板との接触面に対向する位置にあり、熱板上における被ボンディング部材の高さが高い場合や、被ボンディング部材が熱伝導性の小さいもの（たとえばセラミック等）である場合には、ボンディングパッドまで十分に熱が伝わらない可能性が出てくる。また、十分に加熱するには、時間がかかるし、また、被ボンディング部材全体が加熱されるため、過熱を嫌う部材の場合には、温度や時間の制約が発生する。   However, in this method, in the member to be bonded, one surface where the bonding pad is located is at a position facing the contact surface with the hot plate, and when the height of the member to be bonded on the hot plate is high, When the thermal conductivity is low (for example, ceramic), there is a possibility that heat is not sufficiently transmitted to the bonding pad. In addition, it takes time to sufficiently heat, and since the entire member to be bonded is heated, in the case of a member that dislikes overheating, there are restrictions on temperature and time.

一方で、熱板を用いない方法として、ボンディングパッドに高周波電流を流してパッドをその表層から加熱する方法（特許文献２参照）や、ボンディングパッドに赤外線を放射して所望の温度まで加熱する方法（特許文献３参照）が提案されている。   On the other hand, as a method not using a hot plate, a method of heating a pad from its surface by supplying a high-frequency current to the bonding pad (see Patent Document 2), or a method of heating the bonding pad to a desired temperature by emitting infrared rays (See Patent Document 3).

特開２００２−１７６０７３号公報JP 2002-176073 A 特開平５−９０３５５号公報Japanese Patent Laid-Open No. 5-90355 特表２００４−５０３９３９号公報JP-T-2004-503939

しかしながら、上記高周波電流による加熱方法では、電流による被ボンディング部材へのダメージが懸念されるし、電流による間接的な加熱であるため熱板を用いる場合に比べて温度調整が困難である。また、上記赤外線放射による加熱方法では、熱板による方法に比べて赤外線出力や照射時間により温度が変動しやすく、過昇温によるダメージも懸念される。   However, in the heating method using the high frequency current, there is a concern about damage to the member to be bonded due to the current, and since it is indirect heating due to the current, it is difficult to adjust the temperature as compared with the case where a hot plate is used. Further, in the heating method using infrared radiation, the temperature is likely to fluctuate depending on infrared output and irradiation time as compared with the method using a hot plate, and there is a concern about damage due to excessive temperature rise.

本発明は、上記問題に鑑みてなされたものであり、被ボンディング部材の一面に位置するボンディングパッドにワイヤボンディングしてワイヤボンディング構造体を製造するにあたって、被ボンディング部材の過熱を抑制しつつボンディングランドの加熱を適切に行えるようにすることを目的とする。   The present invention has been made in view of the above problems, and in manufacturing a wire bonding structure by wire bonding to a bonding pad located on one surface of a member to be bonded, bonding land is suppressed while suppressing overheating of the member to be bonded. It aims at enabling it to perform heating of appropriately.

上記目的を達成するため、請求項１に記載の発明では、一面（１２、２２）にボンディングパッド（１１、２１）を有する被ボンディング部材（１０、２０）を用意し、ボンディングパッド（１１、２１）にワイヤボンディングを行ってワイヤ（３０）を接続してなるワイヤボンディング構造体の製造方法において、ボンディングパッド（１１、２１）を避けるように、被ボンディング部材（１０、２０）における一面（１２、２２）もしくは一面（１２、２２）寄りの部位に、加熱された加熱物（５０、５３）を接触させた状態とし、この状態にて、加熱物（５０、５３）から被ボンディング部材（１０、２０）を介してボンディングパッド（１１、２１）に熱を伝えながら、ワイヤボンディングを行うものであって、
加熱物として、棒状をなす棒部材（５３）を用い、この棒部材（５３）を被ボンディング部材（１０、２０）の一面（１２、２２）の外郭に位置する側面（１３、２３）のうち一面（１２、２２）寄りの部位のみに接触させた状態で、ボンディングパッド（１１、２１）に前記ワイヤボンディングを行うことを特徴とする。 In order to achieve the above object, in the invention described in claim 1, a member to be bonded (10, 20) having a bonding pad (11, 21) on one surface (12, 22) is prepared, and the bonding pad (11, 21) is prepared. In the method of manufacturing a wire bonding structure in which the wire (30) is connected by performing wire bonding to the bonding member (10, 20), one surface (12, 22) or the heated object (50, 53) is brought into contact with a portion near the one surface (12, 22), and in this state, the member to be bonded (10, while conveying the heat to the bonding pads (11, 21) through 20), there is carried out a wire bonding,
Of the side surfaces (13, 23) positioned on the outer surface of one surface (12, 22) of the member to be bonded (10, 20), a rod member (53) having a rod shape is used as the heated object. The wire bonding is performed on the bonding pads (11, 21) in a state where only the portion near the one surface (12, 22) is in contact .

それによれば、被ボンディング部材（１０、２０）のうちボンディングパッド（１１、２１）およびその周辺部を部分的に加熱することができるから、被ボンディング部材（１０、２０）の過熱を抑制しつつボンディングパッド（１１、２１）の加熱を適切に行うことができる。また、この場合、被ボンディング部材（１０、２０）の一面（１２、２２）に凹凸などがあって、当該一面（１２、２２）に加熱物を接触させにくい場合でも側面（１３、２３）に接触できるから、加熱物である棒部材（５３）と被ボンディング部材（１０、２０）との接触を適切に確保できる。 According to this, since it is possible to partially heat the bonding pads (11, 21) and the peripheral portion of the members to be bonded (10, 20), it is possible to suppress overheating of the members to be bonded (10, 20). The bonding pads (11, 21) can be appropriately heated. Further, in this case, even if there is unevenness on one surface (12, 22) of the members to be bonded (10, 20) and it is difficult to contact the heated object with the one surface (12, 22), the side surface (13, 23) Since it can contact, the contact with the to-be-bonded member (10, 20) and the rod member (53) which is a heating thing can be ensured appropriately.

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

本発明の第１実施形態に係るワイヤボンディング構造体の概略断面図である。1 is a schematic cross-sectional view of a wire bonding structure according to a first embodiment of the present invention. 第１実施形態のワイヤボンディング工程に用いる熱板を示す概略平面図である。It is a schematic plan view which shows the hot plate used for the wire bonding process of 1st Embodiment. （ａ）、（ｂ）はそれぞれ、ワイヤボンディング前の配線基板およびケースの概略平面図、概略断面図である。(A), (b) is the schematic plan view and schematic sectional drawing of the wiring board and case before wire bonding, respectively. （ａ）、（ｂ）はそれぞれ、ワイヤボンディング中の配線基板およびケースの概略平面図、概略断面図である。(A), (b) is the schematic plan view and schematic sectional drawing of a wiring board and a case, respectively, during wire bonding. 本発明の第２実施形態に係るワイヤボンディング工程を示す工程図であり、（ａ）は概略平面図、（ｂ）は概略断面図である。It is process drawing which shows the wire bonding process which concerns on 2nd Embodiment of this invention, (a) is a schematic plan view, (b) is a schematic sectional drawing. 本発明の第３実施形態に係るワイヤボンディング工程を示す工程図であり、（ａ）は概略平面図、（ｂ）は概略断面図である。It is process drawing which shows the wire bonding process which concerns on 3rd Embodiment of this invention, (a) is a schematic plan view, (b) is a schematic sectional drawing. 本発明の第４実施形態に係るワイヤボンディング工程を示す工程図であり、（ａ）は本工程に用いる棒部材の概略平面図、（ｂ）は（ａ）中のＡ矢視側面図、（ｃ）は、棒部材の取り付け状態を示す概略断面図である。It is process drawing which shows the wire bonding process which concerns on 4th Embodiment of this invention, (a) is a schematic plan view of the bar member used for this process, (b) is the A arrow side view in (a), ( c) is a schematic cross-sectional view showing an attached state of the bar member. 本発明の第５実施形態に係るワイヤボンディング工程を示す工程図である。It is process drawing which shows the wire bonding process which concerns on 5th Embodiment of this invention. 本発明の他の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows other embodiment of this invention.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係るワイヤボンディング構造体の概略断面構成を示す図である。本実施形態のワイヤボンディング構造体は、大きくは、配線基板１０をケース２０に搭載し、配線基板１０のボンディングパッド１１とケース２０のボンディングパッド２１とを、ボンディングワイヤ３０で結線して電気的に接続したものである。 (First embodiment)
FIG. 1 is a diagram showing a schematic cross-sectional configuration of a wire bonding structure according to a first embodiment of the present invention. The wire bonding structure according to the present embodiment is roughly configured by mounting the wiring board 10 on the case 20 and electrically connecting the bonding pads 11 of the wiring board 10 and the bonding pads 21 of the case 20 with bonding wires 30. Connected.

配線基板１０は、セラミック基板やプリント基板などよりなり、多層、単層を問わない。また、この配線基板１０の一方の主面である一面１２には、半導体チップやコンデンサなどの図示しない電子部品が実装されていてもよい。   The wiring board 10 is made of a ceramic board, a printed board or the like, and may be a multilayer or a single layer. Further, an electronic component (not shown) such as a semiconductor chip or a capacitor may be mounted on one surface 12 which is one main surface of the wiring substrate 10.

そして、配線基板１０は、その一面１２をケース２０の上方に向けた状態にて、ケース２０の底部に接着剤４０を介して搭載され、接着固定されている。ここで、接着剤４０は、シリコーン樹脂やエポキシ樹脂などよりなる一般的なものである。   The wiring board 10 is mounted and fixed to the bottom of the case 20 via an adhesive 40 with the one surface 12 facing upward of the case 20. Here, the adhesive 40 is a general one made of a silicone resin or an epoxy resin.

このケース２０は、たとえばセラミックパッケージなどよりなるもので、その一面２２にボンディングパッド２１を備えている。これら配線基板１０およびケース２０におけるボンディングパッド１１、２１は、ワイヤボンディング可能なものであればよく、たとえばアルミニウムや銅などの金属などよりなる薄膜や板状のチップ、あるいはリードフレームの一部などでもよい。   The case 20 is made of, for example, a ceramic package and has a bonding pad 21 on one surface 22 thereof. The bonding pads 11 and 21 in the wiring substrate 10 and the case 20 are only required to be capable of wire bonding. For example, a thin film or plate-shaped chip made of a metal such as aluminum or copper, or a part of a lead frame may be used. Good.

こうして、配線基板１０およびケース２０は、一面１２、２２にボンディングパッド１１、２１を有する部材、すなわち被ボンディング部材として構成されており、これら両被ボンディング部材１０、２０のボンディングパッド１１、２１が、ワイヤボンディングにより形成されたボンディングワイヤ３０により接続されている。   Thus, the wiring board 10 and the case 20 are configured as members having bonding pads 11 and 21 on one surface 12 and 22, that is, members to be bonded, and the bonding pads 11 and 21 of both the members to be bonded 10 and 20 are They are connected by bonding wires 30 formed by wire bonding.

次に、このワイヤボンディング構造体の製造方法について述べる。この構造体は、ケース２０に接着剤４０を介して配線基板１０を搭載、接着した後、ワイヤボンディングを行って、両被ボンディング部材１０、２０のボンディングパッド１１、２１同士を接続することにより製造される。このワイヤボンディング工程について、図２、図３、図４を参照して、より具体的に述べる。   Next, a method for manufacturing this wire bonding structure will be described. This structure is manufactured by mounting and bonding the wiring substrate 10 to the case 20 via the adhesive 40, and then performing wire bonding to connect the bonding pads 11 and 21 of the members to be bonded 10 and 20 to each other. Is done. This wire bonding process will be described more specifically with reference to FIGS. 2, 3, and 4. FIG.

図２は、本工程に用いる加熱物としての熱板５０を示す概略平面図であり、図３（ａ）、（ｂ）はそれぞれ、ワイヤボンディング前の配線基板１０およびケース２０の概略平面図、概略断面図であり、図４（ａ）、（ｂ）はそれぞれ、ワイヤボンディング中の配線基板１０およびケース２０の概略平面図、概略断面図である。   FIG. 2 is a schematic plan view showing a hot plate 50 as a heating object used in this step, and FIGS. 3A and 3B are schematic plan views of the wiring substrate 10 and the case 20 before wire bonding, respectively. FIGS. 4A and 4B are a schematic plan view and a schematic cross-sectional view, respectively, of the wiring substrate 10 and the case 20 during wire bonding.

まず、図３に示されるように、互いに組み付けられた配線基板１０およびケース２０を用意する。また、ワイヤボンディングは、図４に示される一般的なキャピラリ６０を有するワイヤボンディング装置により行われる。   First, as shown in FIG. 3, a wiring board 10 and a case 20 assembled to each other are prepared. The wire bonding is performed by a wire bonding apparatus having a general capillary 60 shown in FIG.

そして、本ワイヤボンディング工程では、図４に示されるように、ボンディングパッド１１、２１を避けるように、被ボンディング部材１０、２０における一面１２、２２に、加熱された熱板５０を接触させた状態とし、この状態にて、熱板５０から被ボンディング部材１０、２０を介してボンディングパッド１１、２１に熱を伝えながら、ワイヤボンディングを行う。   In this wire bonding step, as shown in FIG. 4, the heated hot plate 50 is in contact with the surfaces 12 and 22 of the members to be bonded 10 and 20 so as to avoid the bonding pads 11 and 21. In this state, wire bonding is performed while transferring heat from the hot plate 50 to the bonding pads 11 and 21 through the bonded members 10 and 20.

ここで、熱板５０は、図２および図４に示されるように、ボンディングパッド１１、２１に対応する位置に開口部５１を有し、各被ボンディング部材１０、２０の一面１２、２２のうちボンディングパッド１１、２１の近傍部位を部分的に被覆する板状をなすものである。ここでは、熱板５０は、鉄やアルミニウム、銅などよりなるとともに、当該熱板５０を通電により加熱する電源５２を有するものである。   Here, as shown in FIG. 2 and FIG. 4, the hot plate 50 has an opening 51 at a position corresponding to the bonding pads 11, 21, and one of the surfaces 12, 22 of each of the members to be bonded 10, 20. It is a plate that partially covers the vicinity of the bonding pads 11 and 21. Here, the hot plate 50 is made of iron, aluminum, copper, or the like, and has a power source 52 that heats the hot plate 50 by energization.

また、ここでは、ボンディングパッド１１、２１が位置する配線基板１０、ケース２０の各一面１２、２２は、同一平面であり、これら両一面１２、２２を跨ぐ熱板５０も平板形状をなすことで、両一面１２、２２に接触している。   Further, here, the wiring substrate 10 where the bonding pads 11 and 21 are located and the surfaces 12 and 22 of the case 20 are the same plane, and the hot plate 50 straddling both surfaces 12 and 22 also has a flat plate shape. , Both surfaces 12 and 22 are in contact.

なお、これら両一面１２、２２が段差をもって位置している場合、熱板５０を当該段差に対応して曲げられた板形状、もしくは段差面形状のものとすれば、両一面１２、２２と熱板５０との接触が確保できることはもちろんである。   When these two surfaces 12 and 22 are positioned with a step, if the hot plate 50 has a bent plate shape corresponding to the step or a step surface shape, both the surfaces 12 and 22 and the heat Of course, contact with the plate 50 can be secured.

そして、図４に示されるように、この熱板５０を配線基板１０、ケース２０の各一面１２、２２に搭載して接触させる。このとき熱板５０は、電源５２によって通電され加熱されているので、熱板５０の熱は配線基板１０、ケース２０を介して、各ボンディングパッド１１、２１に伝わり、当該各パッド１１、２１はワイヤボンディングに適した温度に加熱されている。   Then, as shown in FIG. 4, this hot plate 50 is mounted and brought into contact with each surface 12, 22 of the wiring substrate 10 and the case 20. At this time, since the hot plate 50 is energized and heated by the power source 52, the heat of the hot plate 50 is transmitted to the bonding pads 11 and 21 via the wiring board 10 and the case 20, and the pads 11 and 21 are It is heated to a temperature suitable for wire bonding.

そして、この状態で、開口部５１を介してボンディングパッド１１、２１にワイヤボンディングを行い、ボンディングワイヤ３０を形成する。その後は、被ボンディング部材１０、２０から熱板５０を取り外すことによって、本実施形態のワイヤボンディング構造体ができあがる。   In this state, wire bonding is performed to the bonding pads 11 and 21 through the opening 51 to form the bonding wire 30. Thereafter, by removing the hot plate 50 from the members to be bonded 10 and 20, the wire bonding structure of this embodiment is completed.

なお、ここでは、個々の開口部５１は、両ボンディングパッド１１、２１およびこれら両パッド１１、２１の間の部分にて連続して開口する１個の貫通穴であり、熱板５０の取り外しにあたっては、熱板５０とワイヤ３０とが干渉することはない。   Here, each opening 51 is one through hole that opens continuously at both bonding pads 11, 21 and a portion between both pads 11, 21. The hot plate 50 and the wire 30 do not interfere with each other.

このように、本実施形態によれば、配線基板１０およびケース２０のうちボンディングパッド１１、２１およびその周辺部を部分的に加熱することができるから、配線基板１０およびケース２０の過熱を抑制しつつボンディングパッド１１、２１の加熱を適切に行うことができる。   As described above, according to the present embodiment, the bonding pads 11 and 21 and their peripheral portions of the wiring board 10 and the case 20 can be partially heated, so that overheating of the wiring board 10 and the case 20 is suppressed. The bonding pads 11 and 21 can be appropriately heated.

また、本実施形態の構造体について、仮に従来方法でワイヤボンディングする場合、たとえば上記図３に示されるものにおいて、ケース２０の底部側の外面にヒータを接触させて、配線基板１０およびケース２０を加熱しながら、ワイヤボンディングを行うこととなる。   Further, if the structure of the present embodiment is wire-bonded by a conventional method, for example, as shown in FIG. 3 above, a heater is brought into contact with the outer surface on the bottom side of the case 20 to connect the wiring substrate 10 and the case 20 to each other. Wire bonding is performed while heating.

しかし、この場合、当該ヒータ上における配線基板１０およびケース２０の高さが高い場合や、これらの材質が熱伝導性の小さいものである場合、ボンディングパッド１１、２１まで熱が十分に伝わりにくいものとなる。その点、本実施形態によれば、ボンディングパッド１１、２１が位置する一面１２、２２に熱源である熱板５０を接触させるから、効率良く、パッドの加熱が行える。   However, in this case, when the wiring board 10 and the case 20 are high on the heater, or when these materials have low thermal conductivity, heat is not sufficiently transmitted to the bonding pads 11 and 21. It becomes. In this respect, according to the present embodiment, the heat plate 50 as a heat source is brought into contact with the surfaces 12 and 22 where the bonding pads 11 and 21 are located, so that the pad can be efficiently heated.

なお、熱板５０の開口部５１は、ボンディングパッド１１、２１が挿入可能であって且つワイヤボンディング後にワイヤ３０に干渉することなく熱板５０を取り外すことが可能なサイズ、形状であればよく、図２に示される開口部５１に限定されるものではない。   The opening 51 of the hot plate 50 may be any size and shape that allows the bonding pads 11 and 21 to be inserted and allows the hot plate 50 to be removed without interfering with the wire 30 after wire bonding. It is not limited to the opening 51 shown in FIG.

また、熱板５０としては、上記電源５２を有する通電加熱されるもの以外にも、たとえば上記電源を持たない熱板５０であって当該熱板５０を予めヒータなどで加熱しておくものとしてもよい。   Further, as the hot plate 50, in addition to the heating plate having the power source 52, for example, the hot plate 50 having no power source, and the hot plate 50 may be heated in advance by a heater or the like. Good.

（第２実施形態）
図５は、本発明の第２実施形態に係るワイヤボンディング工程を示す工程図であり、（ａ）はボンディング前の配線基板１０、ケース２０および熱板５０の概略平面図、（ｂ）はワイヤボンディング中の配線基板１０およびケース２０の概略断面図である。ここでは、第１実施形態との相違点を中心に述べることとする。 (Second Embodiment)
FIGS. 5A and 5B are process diagrams showing a wire bonding process according to the second embodiment of the present invention. FIG. 5A is a schematic plan view of the wiring board 10, the case 20 and the hot plate 50 before bonding, and FIG. It is a schematic sectional drawing of the wiring board 10 and the case 20 during bonding. Here, the difference from the first embodiment will be mainly described.

上記第１実施形態では、複数枚の熱板５０を分けて配置する方法としたが、図５に示されるように、本実施形態では、１枚の熱板５０によって配線基板１０およびケース２０の一面１２、２２を被覆するようにしたものである。この場合、熱板５０の外郭サイズは、配線基板１０の一面１２およびケース２０の一面２２の両方にわたって連続して広がるサイズとされている。   In the first embodiment, the plurality of hot plates 50 are arranged separately, but as shown in FIG. 5, in the present embodiment, the wiring board 10 and the case 20 are formed by one hot plate 50. One side 12 and 22 are covered. In this case, the outer size of the hot plate 50 is a size that continuously spreads over both the one surface 12 of the wiring board 10 and the one surface 22 of the case 20.

なお、上記第１実施形態では、ワイヤボンディング工程の前に、たとえば配線基板１０の一面１２に電子部品などが実装されている場合には、熱板５０間に当該電子部品を位置させるようにすればよい。   In the first embodiment, when an electronic component or the like is mounted on one surface 12 of the wiring board 10 before the wire bonding process, the electronic component is positioned between the hot plates 50, for example. That's fine.

しかし、本実施形態のように一枚の熱板５０で被覆する場合には、たとえば配線基板１０の一面１１に電子部品を実装する前に、ワイヤボンディングを行うことが望ましい。または、当該電子部品実装後にワイヤボンディングする場合には、この熱板５０に当該電子部品を回避する開口部を設けてやればよい。   However, in the case of covering with one hot plate 50 as in the present embodiment, it is desirable to perform wire bonding before mounting electronic components on one surface 11 of the wiring board 10, for example. Alternatively, when wire bonding is performed after mounting the electronic component, an opening for avoiding the electronic component may be provided in the hot plate 50.

（第３実施形態）
図６は、本発明の第３実施形態に係るワイヤボンディング工程を示す工程図であり、（ａ）はボンディング前の配線基板１０、ケース２０および棒部材５３の概略平面図、（ｂ）はワイヤボンディング中の配線基板１０およびケース２０の概略断面図である。ここでは、第１実施形態との相違点を中心に述べることとする。 (Third embodiment)
6A and 6B are process diagrams showing a wire bonding process according to the third embodiment of the present invention. FIG. 6A is a schematic plan view of the wiring substrate 10, the case 20 and the bar member 53 before bonding, and FIG. It is a schematic sectional drawing of the wiring board 10 and the case 20 during bonding. Here, the difference from the first embodiment will be mainly described.

上記第１、第２実施形態では、加熱物として熱板５０を用いる方法としたが、図５に示されるように、本実施形態では、熱板５０に代えて、加熱物として棒状をなす棒部材５３を用いるようにしたものである。   In the first and second embodiments, the hot plate 50 is used as a heated object. However, as shown in FIG. 5, in the present embodiment, instead of the hot plate 50, a rod having a rod shape as a heated object. The member 53 is used.

この場合、図５に示されるように、被ボンディング部材１０、２０の一面１２、２２の外郭に位置し当該一面１２、２２と交差する側面１３、２３のうち一面１２、２２寄りの部位に接触させた状態で、ボンディングパッド１１、２１にワイヤボンディングを行うようにする。   In this case, as shown in FIG. 5, contact is made with a portion closer to the first surface 12, 22 among the side surfaces 13, 23 located on the outer surface of the first surface 12, 22 of the members 10, 20 and intersecting the first surface 12, 22. In this state, wire bonding is performed on the bonding pads 11 and 21.

ここでは、配線基板１０は矩形板状をなし、その配線基板１０の対向する側面１３の外側には、ケース２０の側面２３が隙間を有して対向している。そして、棒部材５３は、この配線基板１０の対向する側面１３に沿って延びる２本のものよりなり、上記両側面１３、２３間の隙間に挿入されて、当該両側面１３、２３に接触するものである。   Here, the wiring board 10 has a rectangular plate shape, and the side face 23 of the case 20 faces the outside of the facing side face 13 of the wiring board 10 with a gap. The bar member 53 is composed of two members extending along the opposite side surfaces 13 of the wiring board 10 and is inserted into the gap between the side surfaces 13 and 23 to come into contact with the side surfaces 13 and 23. Is.

この場合、棒部材５３の熱は、当該側面１３、２３から配線基板１０、ケース２０を介してボンディングパッド１１、２１に伝わり、ボンディングパッド１１、２１は適切に加熱・昇温される。   In this case, the heat of the bar member 53 is transmitted from the side surfaces 13 and 23 to the bonding pads 11 and 21 through the wiring substrate 10 and the case 20, and the bonding pads 11 and 21 are appropriately heated and heated.

このように、本実施形態によっても、配線基板１０およびケース２０のうちボンディングパッド１１、２１およびその周辺部を部分的に加熱することができるから、配線基板１０およびケース２０の過熱を抑制しつつボンディングパッド１１、２１の加熱を適切に行うことができる。   As described above, even in this embodiment, the bonding pads 11 and 21 and the peripheral portion thereof can be partially heated in the wiring board 10 and the case 20, so that overheating of the wiring board 10 and the case 20 is suppressed. The bonding pads 11 and 21 can be appropriately heated.

なお、この棒部材５３においても、上記熱板５０と同様に、加熱方法としては、電源５２を有する通電加熱以外に、たとえば棒部材５３を予めヒータなどで加熱しておく方法としてもよい。   In the bar member 53 as well, the heating method may be a method in which, for example, the bar member 53 is preheated with a heater or the like in addition to the energization heating having the power source 52, as in the case of the hot plate 50.

（第４実施形態）
図７は、本発明の第４実施形態に係るワイヤボンディング工程を示す工程図であり、（ａ）は本工程に用いる棒部材５３の概略平面図、（ｂ）は（ａ）中の矢印Ａ方向から見た側面図、（ｃ）は、この棒部材５３を配線基板１０およびケース２０に取り付けた状態を示す概略断面図である。本実施形態は、上記第３実施形態の棒部材５３を一部変形したものである。 (Fourth embodiment)
FIGS. 7A and 7B are process diagrams showing a wire bonding process according to the fourth embodiment of the present invention. FIG. 7A is a schematic plan view of a bar member 53 used in this process, and FIG. 7B is an arrow A in FIG. A side view seen from the direction, (c), is a schematic cross-sectional view showing a state in which the bar member 53 is attached to the wiring board 10 and the case 20. In the present embodiment, the bar member 53 of the third embodiment is partially modified.

本実施形態では、図７に示されるように、棒部材５３として、配線基板１０およびケース２０の各一面１１、２１に引っ掛かる引っ掛かり部５３ａを有するものを用いる。ここでは、棒部材５３の幅方向（長手方向と直交する方向）に張り出した部分が引っ掛かり部５３ａとされている。   In the present embodiment, as shown in FIG. 7, a bar member 53 having a hook part 53 a that hooks on each surface 11, 21 of the wiring board 10 and the case 20 is used. Here, the protruding portion in the width direction (direction orthogonal to the longitudinal direction) of the bar member 53 is the hook portion 53a.

それによれば、図７（ｃ）に示されるように、棒部材５３を被ボンディング部材１０、２０の一面１１、２１に引っ掛けて支持させることができ、棒部材５３と被ボンディング部材１０、２０との接触状態が安定する。   According to this, as shown in FIG. 7C, the bar member 53 can be hooked and supported on the surfaces 11 and 21 of the members to be bonded 10 and 20, and the bar member 53 and the members to be bonded 10 and 20 can be supported. The contact state of is stable.

（第５実施形態）
図８は、本発明の第５実施形態に係るワイヤボンディング工程を示す工程図である。本実施形態は、複数個の被ボンディング部材１０、２０に対して順番にワイヤボンディングを行うものである。 (Fifth embodiment)
FIG. 8 is a process diagram showing a wire bonding process according to the fifth embodiment of the present invention. In the present embodiment, wire bonding is performed on a plurality of members to be bonded 10 and 20 in order.

そして、この場合、加熱物としての熱板５０を複数個用意し、１個の被ボンディング部材１０、２０毎に、熱板５０を取り替えながらワイヤボンディングを行うものである。この場合、熱板５０は、上記同様、電源５２によって通電加熱するものであってもよいし、予めヒータなどで加熱されたものでもよい。   In this case, a plurality of hot plates 50 as heated objects are prepared, and wire bonding is performed while replacing the hot plate 50 for each of the members to be bonded 10 and 20. In this case, the hot plate 50 may be energized and heated by the power source 52 as described above, or may be heated in advance by a heater or the like.

複数個の被ボンディング部材１０、２０のワイヤボンディングを、１個の熱板５０で行う場合、１回のワイヤボンディング工程ごとに熱板５０を加熱しなおす必要が出てくるが、それに比べて、本実施形態では、予め熱板５０を十分に加熱しておくことで、加熱に要する時間の短縮が図れる。特に、通電加熱よりもヒータで加熱しておくタイプの場合に効果的である。   When wire bonding of a plurality of members to be bonded 10 and 20 is performed with one hot plate 50, it is necessary to reheat the hot plate 50 for each wire bonding step. In the present embodiment, the time required for heating can be shortened by sufficiently heating the hot plate 50 in advance. In particular, it is more effective in the case of heating with a heater than with electric heating.

なお、図８では加熱物として熱板５０を用いたが、棒部材５３であっても本実施形態は同様に行えることは言うまでもない。   In FIG. 8, the hot plate 50 is used as the heating object, but it goes without saying that the present embodiment can be similarly performed even with the bar member 53.

（他の実施形態）
上述したように、ワイヤボンディング時に、被ボンディング部材１０、２０の一面１２、２２上には、ボンディングパッド１１、２１以外に、実装された電子部品などによる凸部分が存在する場合があるが、この場合、上記第１実施形態のように分割された複数の熱板５０を部分的に配置したり、または、熱板５０における凸部分に対応した位置に開口部を設けたりすれば、この凸部分と熱板５０との干渉を回避することができる。 (Other embodiments)
As described above, at the time of wire bonding, in addition to the bonding pads 11 and 21, there may be a convex portion due to mounted electronic components on the surfaces 12 and 22 of the members to be bonded 10 and 20. In this case, if the plurality of divided heat plates 50 are partially arranged as in the first embodiment, or if an opening is provided at a position corresponding to the protruded portion in the heat plate 50, this protruded portion. And the hot plate 50 can be avoided.

さらに、図９に示されるように、その凸部分（ここでは電子部品に相当）１４にて熱板５０にプレスなどにより凹部５０ａを形成することによっても、当該干渉の回避が可能である。   Furthermore, as shown in FIG. 9, the interference can also be avoided by forming a concave portion 50 a on the hot plate 50 by pressing or the like at the convex portion (corresponding to an electronic component here) 14.

また、上記各実施形態では、配線基板１０とケース２０との両方に接触する共通の熱板５０、棒部材５３を用いたが、配線基板１０用、ケース２０用とで別々の加熱物を用いてもよい。つまり、たとえば配線基板１０のみに接触する加熱物と、これとは別体にケース２０のみに接触する加熱物とを用いるようにしてもよい。   Further, in each of the above embodiments, the common hot plate 50 and the bar member 53 that are in contact with both the wiring board 10 and the case 20 are used. However, separate heating objects are used for the wiring board 10 and the case 20. May be. That is, for example, a heated object that contacts only the wiring substrate 10 and a heated object that contacts only the case 20 may be used separately.

また、被ボンディング部材としては、一面にボンディングパッドを有するものであれば上記した配線基板１０やケース２０に限定されるものではなく、たとえば半導体チップやパッケージ、あるいはリードフレームの一部がボンディングパッドとして構成されたものなどであってもよい。   The member to be bonded is not limited to the wiring substrate 10 or the case 20 as long as it has a bonding pad on one side. For example, a part of a semiconductor chip, a package, or a lead frame is used as a bonding pad. It may be configured.

１０ 被ボンディング部材としての配線基板
１１ 配線基板のボンディングパッド
１２ 配線基板の一面
１３ 配線基板の側面
２０ 被ボンディング部材としてのケース
２１ ケースのボンディングパッド
２２ ケースの一面
２３ ケースの側面
５０ 加熱物としての熱板
５１ 熱板の開口部
５３ 加熱物としての棒部材
５３ａ 引っ掛かり部 DESCRIPTION OF SYMBOLS 10 Wiring board | substrate as a to-be-bonded member 11 Bonding pad of a wiring board 12 One side of a wiring board 13 Side surface of a wiring board 20 Case as a to-be-bonded member 21 Bonding pad of a case 22 One side of a case 23 Side of a case 50 Heat as a heating thing Plate 51 Opening portion of hot plate 53 Bar member 53a as a heated object Hook portion

Claims (1)

一面（１２、２２）にボンディングパッド（１１、２１）を有する被ボンディング部材（１０、２０）を用意し、前記ボンディングパッド（１１、２１）にワイヤボンディングを行ってワイヤ（３０）を接続してなるワイヤボンディング構造体の製造方法において、
前記ボンディングパッド（１１、２１）を避けるように、前記被ボンディング部材（１０、２０）における前記一面（１２、２２）もしくは前記一面（１２、２２）寄りの部位に、加熱された加熱物（５０、５３）を接触させた状態とし、
この状態にて、前記加熱物（５０、５３）から前記被ボンディング部材（１０、２０）を介して前記ボンディングパッド（１１、２１）に熱を伝えながら、前記ワイヤボンディングを行うものであって、
前記加熱物として、棒状をなす棒部材（５３）を用い、
この棒部材（５３）を前記被ボンディング部材（１０、２０）の前記一面（１２、２２）の外郭に位置する側面（１３、２３）のうち前記一面（１２、２２）寄りの部位のみに接触させた状態で、前記ボンディングパッド（１１、２１）に前記ワイヤボンディングを行うことを特徴とするワイヤボンディング構造体の製造方法。 A member to be bonded (10, 20) having bonding pads (11, 21) on one side (12, 22) is prepared, and wire bonding is performed on the bonding pads (11, 21) to connect the wires (30). In the method of manufacturing a wire bonding structure,
In order to avoid the bonding pads (11, 21), the heated object (50) is heated on the one surface (12, 22) or a portion near the one surface (12, 22) of the member to be bonded (10, 20). 53) are in contact with each other,
In this state, the wire bonding is performed while transferring heat from the heated object (50, 53) to the bonding pad (11, 21) via the member to be bonded (10, 20) ,
As the heated object, a rod member (53) having a rod shape is used,
This bar member (53) is in contact with only the portion near the one surface (12, 22) of the side surfaces (13, 23) located on the outer surface of the one surface (12, 22) of the member to be bonded (10, 20). A method of manufacturing a wire bonding structure , wherein the wire bonding is performed on the bonding pads (11, 21) in a state of being applied .
JP2011025910A 2011-02-09 2011-02-09 Manufacturing method of wire bonding structure Expired - Fee Related JP5578101B2 (en)

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