JP5535750B2 - 発光素子モジュール - Google Patents
発光素子モジュール Download PDFInfo
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- JP5535750B2 JP5535750B2 JP2010104767A JP2010104767A JP5535750B2 JP 5535750 B2 JP5535750 B2 JP 5535750B2 JP 2010104767 A JP2010104767 A JP 2010104767A JP 2010104767 A JP2010104767 A JP 2010104767A JP 5535750 B2 JP5535750 B2 JP 5535750B2
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- light emitting
- emitting element
- lead
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- element module
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
1,2 リード
11,21 端子部
12 ダイボンディング部
12a 搭載面
13 ワイヤボンディング部
22 ボンディング部
3 LEDチップ(発光素子)
31,32 電極端子
4 支持部材
41 反射面
42 保護部
42A 開口部
42a,42b 傾斜部
5 透光部材
61,62 ワイヤ
Claims (11)
- 厚み方向における一方側に搭載面を具備するダイボンディング部を有する第1のリードと、
ボンディング部を有し、上記第1のリードから離間し、かつ、上記第1のリードと同じ厚み方向となるように配置された第2のリードと、
上記搭載面に搭載されており、上記第1のリードと導通する第1の電極端子および上記第2のリードと導通する第2の電極端子を有する発光素子と、
上記第1のリードと上記第2のリードとを支持する支持部材と、
を備えており、
上記第2の電極端子は、上記厚み方向における上記発光素子の一方側の端面に形成されており、かつ、上記ボンディング部とワイヤにより接続されている発光素子モジュールであって、
上記支持部材は、上記第1のリードの厚み方向における一方側の面を覆うとともに、上記搭載面を露出させるように形成された保護部を有しており、
上記保護部は、上記ワイヤが延びる方向において、上記ダイボンディング部から遠ざかるにつれて厚みが薄くなる傾斜部を有しているとともに、
上記ダイボンディング部が、上記厚み方向において、上記第1のリードの上記保護部に覆われている部分よりも一方側に膨出しており、
上記第2リードの上記ボンディング部の表面は上記厚み方向において上記第1リードの上記ダイボンディング部の表面よりも他方側に位置しており、
上記傾斜部は、上記ダイボンディング部の表面よりも上記厚み方向において他方側に位置していることを特徴とする、発光素子モジュール。 - 上記傾斜部が、上記厚み方向視において上記第2のリードの一部と重なるように形成されている、請求項1に記載の発光素子モジュール。
- 上記ボンディング部の上記厚み方向における一方側に金属メッキが施されている、請求項1または2に記載の発光素子モジュール。
- 上記第1の電極端子が上記ダイボンディング部に接合されている、請求項1ないし3のいずれかに記載の発光素子モジュール。
- 上記第1の電極端子が上記厚み方向における上記発光素子の一方側に形成されており、
上記第1のリードは、上記第1の電極端子と追加のワイヤを介してワイヤボンディングされるワイヤボンディング部を有しており、
上記保護部は、上記ワイヤボンディング部を露出させるように形成されている、請求項1ないし3のいずれかに記載の発光素子モジュール。 - 上記保護部は、上記追加のワイヤが延びる方向において、上記ダイボンディング部から遠ざかるにつれて厚みが薄くなる追加の傾斜部を有している、請求項5に記載の発光素子モジュール。
- 上記ワイヤボンディング部の上記厚み方向における一方側に金属メッキが施されている、請求項5または6に記載の発光素子モジュール。
- 上記支持部材は、上記発光素子が発光する光を反射する樹脂により形成されており、かつ、上記厚み方向と直交する方向において上記発光素子から遠ざかるにつれて上記厚み方向において上記発光素子から遠ざかるように傾斜する反射面を備えている、請求項1ないし7のいずれかに記載の発光素子モジュール。
- 上記反射面は、上記厚み方向視において上記発光素子を囲む枠状に形成されており、
上記保護部は、上記反射面と繋がるように形成されている、請求項8に記載の発光素子モジュール。 - 上記厚み方向視における上記反射面の内周は長矩形状であり、その短手方向における中央に上記ダイボンディング部が配置されている、請求項9に記載の発光素子モジュール。
- 上記厚み方向視における上記反射面の内周は長矩形状であり、その長手方向における中央に上記ダイボンディング部が配置されている、請求項9または10に記載の発光素子モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010104767A JP5535750B2 (ja) | 2010-04-30 | 2010-04-30 | 発光素子モジュール |
PCT/JP2011/060435 WO2011136357A1 (ja) | 2010-04-30 | 2011-04-28 | Ledモジュール |
US13/695,075 US9748448B2 (en) | 2010-04-30 | 2011-04-28 | LED module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010104767A JP5535750B2 (ja) | 2010-04-30 | 2010-04-30 | 発光素子モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011233800A JP2011233800A (ja) | 2011-11-17 |
JP5535750B2 true JP5535750B2 (ja) | 2014-07-02 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2010104767A Active JP5535750B2 (ja) | 2010-04-30 | 2010-04-30 | 発光素子モジュール |
Country Status (3)
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US (1) | US9748448B2 (ja) |
JP (1) | JP5535750B2 (ja) |
WO (1) | WO2011136357A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552374B (zh) * | 2011-02-28 | 2016-10-01 | Nichia Corp | 發光裝置 |
CN103178191B (zh) * | 2011-12-24 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管 |
JP2013251422A (ja) * | 2012-06-01 | 2013-12-12 | Apic Yamada Corp | Ledチップ実装用基板、ledパッケージ、金型、並びに、ledチップ実装用基板及びledパッケージの製造方法 |
KR102019499B1 (ko) * | 2012-11-05 | 2019-09-06 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
JP6532200B2 (ja) | 2014-09-04 | 2019-06-19 | 日亜化学工業株式会社 | パッケージ及びそれを用いた発光装置 |
CN106384775B (zh) * | 2016-10-27 | 2019-06-14 | 广东工业大学 | 一种led倒装结构 |
JP6669217B2 (ja) * | 2018-08-30 | 2020-03-18 | 日亜化学工業株式会社 | パッケージ及びそれを用いた発光装置 |
US11417808B2 (en) | 2019-09-12 | 2022-08-16 | Nichia Corporation | Light emitting device |
KR20210143452A (ko) | 2020-05-20 | 2021-11-29 | 삼성전자주식회사 | 반도체 발광소자 및 이를 구비한 발광소자 패키지 |
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DE19829197C2 (de) * | 1998-06-30 | 2002-06-20 | Siemens Ag | Strahlungsaussendendes und/oder -empfangendes Bauelement |
DE10020465A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US20030141563A1 (en) * | 2002-01-28 | 2003-07-31 | Bily Wang | Light emitting diode package with fluorescent cover |
JP2004127988A (ja) | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | 白色発光装置 |
TWI237546B (en) * | 2003-01-30 | 2005-08-01 | Osram Opto Semiconductors Gmbh | Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component |
US20050133808A1 (en) * | 2003-09-11 | 2005-06-23 | Kyocera Corporation | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
US20050253159A1 (en) * | 2004-04-28 | 2005-11-17 | Creswick Steven B | Semiconductor (LED) chip attachment |
KR100665117B1 (ko) * | 2005-02-17 | 2007-01-09 | 삼성전기주식회사 | Led 하우징 및 그 제조 방법 |
JP4739842B2 (ja) * | 2005-07-25 | 2011-08-03 | スタンレー電気株式会社 | 表面実装型led |
US20070040182A1 (en) * | 2005-08-16 | 2007-02-22 | Julian Lee | Light emitting diode packaging structure |
TWM295339U (en) * | 2005-10-28 | 2006-08-01 | Turning Prec Ind Co Ltd | Multilayer LED package structure |
JP4952233B2 (ja) * | 2006-04-19 | 2012-06-13 | 日亜化学工業株式会社 | 半導体装置 |
JP2008060344A (ja) | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
EP2109157B1 (en) * | 2006-12-28 | 2018-11-28 | Nichia Corporation | Light emitting device and method for manufacturing the same |
JP5380774B2 (ja) * | 2006-12-28 | 2014-01-08 | 日亜化学工業株式会社 | 表面実装型側面発光装置及びその製造方法 |
JP2009099771A (ja) * | 2007-10-17 | 2009-05-07 | Rohm Co Ltd | 半導体発光モジュール |
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JP5493553B2 (ja) * | 2009-07-31 | 2014-05-14 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
-
2010
- 2010-04-30 JP JP2010104767A patent/JP5535750B2/ja active Active
-
2011
- 2011-04-28 US US13/695,075 patent/US9748448B2/en active Active
- 2011-04-28 WO PCT/JP2011/060435 patent/WO2011136357A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2011233800A (ja) | 2011-11-17 |
US9748448B2 (en) | 2017-08-29 |
WO2011136357A1 (ja) | 2011-11-03 |
US20130043501A1 (en) | 2013-02-21 |
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