JP5459025B2 - Substrate laminating apparatus, laminated semiconductor device manufacturing method, laminated semiconductor device, substrate laminating method, and laminated semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a substrate bonding apparatus, a method for manufacturing a laminated semiconductor device, and a laminated semiconductor device.

Patent Document 1 discloses a substrate bonding apparatus that stacks two substrates on which circuits are formed so that electrodes to be bonded are in contact with each other, and bonds the two substrates while applying pressure and heating. Have been described.
Patent Document 1 Japanese Unexamined Patent Application Publication No. 2009-49066

  However, in the substrate bonding process, each time a plurality of superimposed substrates are put into the substrate bonding apparatus, the temperature is heated from room temperature to a predetermined temperature, and the temperature is maintained until the substrates are bonded while applying pressure. Then, the temperature is lowered to room temperature, and the process of taking out the bonded substrate is repeated. Since it takes a considerable amount of time to raise, keep, and lower the temperature, the process of bonding the substrates becomes a bottleneck in the manufacturing throughput of the laminated semiconductor device, and it is necessary to provide a plurality of substrate bonding apparatuses to improve it. .

  In order to solve the above problems, in the first aspect of the present invention, there is provided an apparatus for laminating a plurality of substrates, wherein the temperature of a superposed substrate obtained by laminating the plurality of substrates is increased to a predetermined temperature. There is provided a substrate bonding apparatus including a temperature raising unit and a heat retaining unit that holds the temperature of the superimposed substrate at a temperature at which the substrates of the plurality of superimposed substrates heated by the temperature raising unit are bonded to each other. .

  According to a second aspect of the present invention, there is provided a method for manufacturing a laminated semiconductor device including bonding a substrate with the substrate bonding apparatus.

  In a third aspect of the present invention, a stacked semiconductor device manufactured by the above-described stacked semiconductor device manufacturing method is provided.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

It is a top view which shows typically the whole structure of the board | substrate bonding apparatus 100 which is one Embodiment. 3 is a front view schematically showing a temperature raising unit 250. FIG. The process by which the temperature raising unit 250 presses the superimposed substrate is shown. A process in which the upper stage 310 separates the upper substrate holder 124 from the superimposed substrate 420 is shown. A process in which the push-up pins 322 push up the overlapping substrate 420 and separate from the lower substrate holder 125 is shown. A process in which the push-up pins 322 push up the overlapping substrate 420 and separate from the lower substrate holder 125 is shown. It is a front view which shows the heat retention part 260 typically. A process in which the pressure head 414 of the heat retaining unit 260 pressurizes the superimposed substrate 420 is shown. The AA cross section in FIG. 6 is shown. An embodiment of a heat retaining unit 260 using a heating member 460 is shown. It is a flowchart of the manufacturing method which manufactures a laminated semiconductor device.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 is a plan view schematically showing the overall structure of a substrate bonding apparatus 100 according to an embodiment. The substrate bonding apparatus 100 includes a housing 102, a room temperature unit 104, a high temperature unit 106, and substrate cassettes 112, 114, and 116. The normal temperature part 104 and the high temperature part 106 are provided in the common housing 102.

  The substrate cassettes 112, 114, and 116 are detachably attached to the housing 102 outside the housing 102. The substrate cassettes 112, 114, and 116 accommodate the first substrate 122 and the second substrate 123 that are bonded in the substrate bonding apparatus 100. A plurality of first substrates 122 and second substrates 123 are collectively loaded into the substrate bonding apparatus 100 by the substrate cassettes 112, 114, and 116. Further, the first substrate 122 and the second substrate 123 bonded in the substrate bonding apparatus 100 are collected in a lump.

  The room temperature unit 104 includes a pre-aligner 126, a stage device 140, a substrate holder rack 128, and a pair of robot arms 132 and 134, which are disposed inside the housing 102. The inside of the housing 102 is temperature-controlled so as to maintain substantially the same temperature as the room temperature of the environment where the substrate bonding apparatus 100 is installed. The room temperature unit 104 transports the first substrate 122 and the second substrate 123 in the atmosphere.

  Since the pre-aligner 126 is highly accurate, the position of each first substrate 122 or the second substrate 123 is temporarily aligned so that the position of the first substrate 122 or the second substrate 123 is within the narrow adjustment range of the stage device 140. To do. Thereby, the stage apparatus 140 can position the position of the 1st board | substrate 122 and the 2nd board | substrate 123 reliably.

  The substrate holder rack 128 accommodates and waits for a plurality of upper substrate holders 124 and a plurality of lower substrate holders 125. The upper substrate holder 124 and the lower substrate holder 125 hold the first substrate 122 and the second substrate 123 by electrostatic adsorption, respectively.

  The stage device 140 aligns the positions of the electrodes to be bonded on the first substrate 122 and the second substrate 123 to be bonded and superimposes them. A heat insulating wall 145 and a shutter 146 are provided surrounding the stage device 140. The space surrounded by the heat insulating wall 145 and the shutter 146 is communicated with an air conditioner or the like, and the temperature is controlled, so that the alignment accuracy in the stage device 140 is maintained.

  The stage apparatus 140 includes a first stage 141, a second stage 142, and a control unit 148. The first stage 141 is fixed to the lower surface of the top plate of the stage device 140. The lower surface of the first stage 141 holds the upper substrate holder 124 by vacuum suction.

  The second stage 142 is disposed on the bottom plate of the stage device 140 so as to be movable in the XYZ direction so as to face the first stage 141. The second stage 142 has a tilt function. The upper surface of the second stage 142 holds the lower substrate holder 125 by vacuum suction.

  The control unit 148 controls the movement of the second stage 142. The controller 148 moves the second stage 142 and aligns the position of the second substrate 123 with respect to the first substrate 122 held on the first stage 141. The controller 148 can raise the second stage 142 so that the first substrate 122 and the second substrate 123 overlap each other. Thereafter, the first substrate 122 and the second substrate 123 sandwiched between the upper substrate holder 124 and the lower substrate holder 125 are temporarily fixed by a positioning mechanism provided in the upper substrate holder 124 and the lower substrate holder 125.

  Here, the first substrate 122 and the second substrate 123 that are overlapped and before the main bonding are sometimes described as “overlapped substrates”. The first substrate 122 and the second substrate 123 that are joined together may be described as a “laminated substrate”. The combination of the upper substrate holder 124 and the lower substrate holder 125 and the first substrate 122 and the second substrate 123 sandwiched between them may be described as a “holder pair”.

  The first substrate 122 and the second substrate 123 loaded in the substrate bonding apparatus 100 are devices in which elements, circuits, terminals, and the like are formed in addition to a single silicon wafer, a compound semiconductor wafer, a glass substrate, and the like. It's okay. Further, the loaded first substrate 122 and second substrate 123 may be laminated substrates that are already formed by laminating a plurality of wafers.

  Of the pair of robot arms 132, 134, the robot arm 132 disposed on the side closer to the substrate cassettes 112, 114, 116 is the first substrate 122 between the substrate cassettes 112, 114, 116, the pre-aligner 126 and the stage apparatus 140. The second substrate 123 is transported. On the other hand, the robot arm 134 arranged on the side far from the substrate cassettes 112, 114, 116 is between the stage device 140, the substrate holder rack 128, and the load lock chamber 220, the first substrate 122, the second substrate 123, and the upper substrate. The holder 124 and the lower substrate holder 125 are transported.

  The robot arm 134 is also responsible for loading and unloading the upper substrate holder 124 and the lower substrate holder 125 with respect to the substrate holder rack 128. When holding the first substrate 122 on the first stage 141, the robot arm 134 first takes out one upper substrate holder 124 from the substrate holder rack 128 and places it on the second stage 142. The second stage 142 moves to the side closer to the substrate cassettes 112, 114, and 116. The robot arm 132 takes out the pre-aligned first substrate 122 from the pre-aligner 126 and places it on the upper substrate holder 124 on the second stage 142 for electrostatic adsorption.

  The second stage 142 moves again to the side far from the substrate cassettes 112, 114, 116. The robot arm 134 receives the upper substrate holder 124 that electrostatically attracts the first substrate 122 from the second stage 142, turns it over, and approaches the first stage 141. The first stage 141 holds the upper substrate holder 124 by vacuum suction.

  The robot arm 134 places the lower substrate holder 125 on the second stage 142. The robot arm 132 places and holds the second substrate 123 thereon. Thus, the surface of the second substrate 123 held on the second stage 142 on which the circuits and the like are formed is opposed to the surface of the first substrate 122 held on the first stage 141 and on which the circuits and the like are formed. Placed in.

  The high temperature unit 106 includes a heat insulating wall 108, a load lock chamber 220, a robot arm 230, a temperature increasing unit 240, a temperature increasing unit 250, a heat retaining unit 260, and a cooling chamber 270. The heat insulating wall 108 surrounds the high temperature part 106 and blocks heat radiation to the outside of the high temperature part 106. Thereby, the influence which the heat of the high temperature part 106 has on the normal temperature part 104 is suppressed. The inside of the high temperature part 106 is maintained in a constant vacuum state. Thereby, contamination and oxidation of the substrate carried into the high temperature part 106 can be suppressed.

  The robot arm 230 includes a first substrate 122, a second substrate 123, an upper substrate holder 124, and a lower substrate holder 125 between the temperature raising unit 240, the temperature raising unit 250, the heat retaining unit 260, and the cooling chamber 270 and the load lock chamber 220. Transport.

  The load lock chamber 220 connects the normal temperature part 104 and the high temperature part 106. The load lock chamber 220 includes shutters 222 and 224 that open and close alternately on the room temperature section 104 side and the high temperature section 106 side.

  When a holder pair including the first substrate 122, the second substrate 123, the upper substrate holder 124, and the lower substrate holder 125 is carried into the high temperature unit 106 from the normal temperature unit 104, first, the shutter 222 on the normal temperature unit 104 side is opened. Then, the robot arm 134 carries the holder pair into the load lock chamber 220. Next, the shutter 222 on the room temperature section 104 side is closed, and the inside of the load lock chamber 220 is evacuated. When the degree of vacuum inside the load lock chamber 220 becomes the degree of vacuum on the high temperature part 106 side, the shutter 224 on the high temperature part 106 side is opened. The robot arm 230 unloads the holder pair from the load lock chamber 220 and loads it into the temperature raising unit 240.

  The temperature raising unit 240 and the temperature raising unit 250 sequentially raise the temperature of the holder pair to a higher temperature. For example, when the substrate bonding temperature is 450 ° C., the temperature raising unit 240 heats the holder pair from room temperature to 200 ° C. Thereafter, the robot arm 230 unloads the holder pair from the temperature raising unit 240 and inserts the holder pair into the temperature raising unit 250. The temperature raising unit 250 further heats the holder pair to 450 ° C. Here, the substrate bonding temperature refers to a temperature at which electrodes to be bonded on the first substrate 122 and the second substrate 123 to be bonded are bonded to each other, and a temperature at which bumps provided on the electrodes are bonded. including.

  The temperature raising unit 250 presses the holder pair at the substrate bonding temperature to temporarily bond the overlapping substrates. Thereafter, the temperature raising unit 250 removes the upper substrate holder 124 and the lower substrate holder 125 from the pair of holders, takes out the superimposed substrate to which the robot arm 230 is temporarily bonded, and inserts it into the heat retaining unit 260 having the bonding temperature. Instead of this, each of the temperature raising unit 240 and the temperature raising unit 250 heats the received holder pair from room temperature to a predetermined temperature, for example, 450 ° C. The superposed substrate may be transferred to the heat retaining unit 260 from each.

  The heat retaining unit 260 accommodates a plurality of superposed substrates heated by the temperature raising unit 250, heats and pressurizes the superposed substrates at the substrate bonding temperature, and completes the bonding of the substrates. The robot arm 230 takes out the finally bonded laminated substrate from the heat retaining unit 260 and inserts it into the cooling chamber 270 to cool it.

  The temperature raising unit 240, the temperature raising unit 250, the heat retaining unit 260, and the cooling chamber 270 each have a carry-in port through which a substrate and a substrate holder can be carried in and out by the robot arm 230. In the temperature raising unit 240, the temperature raising unit 250, the heat retaining unit 260, and the cooling chamber 270, the carry-in entrance is closed by a shutter in a case other than carry-in / out, and is shut off from the outside to prevent mutual temperature effects.

  When the upper substrate holder 124, the lower substrate holder 125, and the laminated substrate are carried out from the high temperature unit 106 to the normal temperature unit 104, a series of operations for carrying in the high temperature unit 106 from the normal temperature unit 104 is executed in reverse order. By a series of these operations, the holder pair can be carried into or out of the high temperature unit 106 without leaking the internal atmosphere of the high temperature unit 106 to the normal temperature unit 104 side.

  The laminated substrate unloaded from the high temperature unit 106 is returned to and stored in one of the substrate cassettes 112, 114, 116 by the robot arms 134, 132 and the second stage 142. The upper substrate holder 124 and the lower substrate holder 125 that are carried out are returned to the substrate holder rack 128 and wait.

  In many areas in the substrate bonding apparatus 100, the robot arms 134, 230 and the first arm 122 are held with the upper substrate holder 124 holding the first substrate 122 or with the lower substrate holder 125 holding the second substrate 123. It is conveyed by the two stage 142. When the upper substrate holder 124 that holds the first substrate 122 or the lower substrate holder 125 that holds the second substrate 123 is transported, the robot arms 134 and 230 are arranged such that the upper substrate holder 124 or the lower substrate by vacuum adsorption or electrostatic adsorption. The holder 125 is sucked and held.

  FIG. 2 is a front view schematically showing the structure of the temperature raising unit 250. The temperature raising unit 250 includes a heat insulating chamber 300, an upper stage 310, a lower stage 320, and an elevating unit 330. The heat insulation chamber 300 accommodates the upper stage 310, the lower stage 320, and the elevating part 330 therein.

  The heat insulating chamber 300 has a heat insulating wall formed of a heat insulating material. When the holder pair is heated, heat radiation to the outside is cut off, and adverse effects on devices and equipment existing around the robot arm and the like are prevented. Can do. In the heat insulating chamber 300, the upper stage 310 is fixed to the top plate, and the base of the elevating unit 330 is fixed to the bottom plate. The heat insulating chamber 300 is formed of a highly rigid material for the purpose of preventing deformation due to the reaction force of the apparatus when the holder pair is pressed by the upper stage 310 and the lower stage 320.

  The upper stage 310 has a function of heating and cooling, and can heat and cool the holder pair. The elevating part 330 includes a cylinder 334 fixed to the base and a piston 332 coupled to the cylinder. The piston 332 moves up and down by a control signal from the outside.

  The lower stage 320 is installed on the upper surface of the piston 332. The lower stage 320 can move up and down together with the piston 332. The lower stage 320 has a function of heating and cooling, and can heat and cool the holder pair.

  FIG. 2 shows a state where the holder pair is loaded in the temperature raising unit 250 and installed on the lower stage 320. After the holder pair is placed on the lower stage 320, when the piston 332 is raised, the holder pair can be sandwiched between the upper stage 310 and the lower stage 320.

  The temperature raising unit 250 further raises the piston 332 according to the pressurization control signal, and applies a predetermined pressure to the first substrate 122 and the second substrate 123 via the upper substrate holder 124 and the lower substrate holder 125 to join them. can do. By applying pressure, the electrodes to be bonded can be uniformly contacted between the first substrate 122 and the second substrate 123, and uniform bonding can be realized.

  The temperature raising unit 240 and the cooling chamber 270 may have the same structure as the temperature raising unit 250. The cooling chamber 270 may have only a cooling mechanism without having a heating mechanism on the upper and lower stages.

  However, until the first substrate 122 and the second substrate 123 are completely joined, it takes a long time to heat and pressurize the holder pair with the temperature raising unit 250. For example, it may take about 30 minutes to complete the main joining by the temperature raising unit 250. Therefore, the heat retention and pressurization in the substrate bonding becomes a bottleneck of throughput in manufacturing the laminated semiconductor device. On the other hand, if the temperature raising unit 250 is simply increased, the temperature raising unit 250 has the lower stage 320 and the raising / lowering unit 330 that operate precisely, so that the entire apparatus becomes expensive.

  Therefore, in the present embodiment, after the first substrate 122 and the second substrate 123 are temporarily joined by heating and pressurizing in the temperature raising unit 250 in a short time, the temporarily joined superposed substrate is moved to the heat retaining unit 260. Keep warm for a long time. For example, even if the superimposed substrate is removed from the upper substrate holder 124 and the lower substrate holder 125 and conveyed, the first substrate 122 and the second substrate 123 are not separated from each other by the temperature raising unit 250. 122 and the second substrate 123 are temporarily joined. The temporary joining time is, for example, 10 minutes. After the temporary bonding, the overlapped substrate is moved to the heat retaining portion 260, and the plurality of overlapped substrates are simultaneously heated and pressurized until the first substrate 122 and the second substrate 123 are completely bonded. This heat retention and pressurization time is, for example, 20 minutes. By this method, the rotation rate of the temperature raising unit 250 can be increased, and the overall throughput of manufacturing the stacked semiconductor device can be increased.

  FIG. 3 shows a process in which the temperature raising unit 250 presses the overlapping substrate. The lower stage 320 rises, sandwiches the holder pair from above and below together with the upper stage 310, and applies pressure to the holder pair. The temperature raising unit 250 heats and pressurizes the holder pair in a short time, thereby temporarily joining the first substrate 122 and the second substrate 123. The upper stage 310 and the lower stage 320 can hold the upper substrate holder 124 and the lower substrate holder 125 by vacuum suction, respectively.

  The upper stage 310 has three presser pins 312 that can be vertically expanded and contracted by control. The presser pin 312 presses the stacked substrate 420 when the upper substrate holder 124 is separated from the holder pair. The upper substrate holder 124 is provided with three through holes 164 through which the presser pins 312 pass. The upper stage 310 further includes a heater 314 and a cooling mechanism 316. The heater 314 and the cooling mechanism 316 heat, cool and keep the holder pair.

  The lower stage 320 has three push-up pins 322 that can be vertically expanded and contracted by control. The push-up pins 322 lift the superimposed substrate 420 when separating the superimposed substrate 420 from the lower substrate holder 125. The lower substrate holder 125 is provided with three through holes 165 through which the push-up pins 322 pass. The lower stage 320 further includes a heater 324 and a cooling mechanism 326. The heater 324 and the cooling mechanism 326 heat, cool and keep the holder pair.

  FIG. 4 shows a process in which the upper stage 310 separates the upper substrate holder 124 from the superimposed substrate 420. After the temporary bonding, the upper stage 310 and the lower stage 320 suck the upper substrate holder 124 and the lower substrate holder 125, respectively, by vacuum suction. The lower stage 320 descends a predetermined distance while maintaining vacuum suction. As the lower stage 320 is lowered, the presser pin 312 advances downward to press the back surface of the first substrate 122. Accordingly, the upper substrate holder 124 remains held on the upper stage 310 by vacuum suction, but the superimposed substrate 420 is pressed by the presser pin 312 and descends together with the lower substrate holder 125 sucked by the lower stage 320. The upper substrate holder 124 is separated from the superimposed substrate 420.

  FIG. 5 shows a process in which the push-up pins 322 push up the overlapping substrate 420 and separate it from the lower substrate holder 125. After weakening the force with which the presser pin 312 presses the overlapping substrate 420, the push-up pin 322 pushes up the overlapping substrate 420 with a force larger than the pressing force of the presser pin 312. Since the lower substrate holder 125 remains attracted to the lower stage 320 by vacuum, the superimposed substrate 420 is separated from the lower substrate holder 125. Since the overlapping substrate 420 is pressed from above by the presser pins 312 with a weak force, it does not jump and be displaced when it is pushed up by the presser pins 322.

  As shown in FIG. 6, after the push-up pins 322 lift the overlapping substrate 420, the presser pins 312 are retracted. Thereafter, the robot arm 230 carries the superimposed substrate 420 out of the temperature raising unit 250 and moves it to the heat retaining unit 260.

  7 and 8 are front views schematically showing the heat retaining unit 260. FIG. FIG. 9 is a cross-sectional view of the heat retaining portion 260 observed from the AA direction shown in FIG. The heat retaining unit 260 includes a heat retaining unit casing 400, a press unit 402, a press unit 404, a support unit 406, a pressure head 412, a pressure head 414, and a transport robot 430.

  The heat insulation unit housing 400 has a heat insulating wall formed of a heat insulating material, and when the laminated substrate 420 is heated, heat radiation to the outside is blocked and the robot arm and other devices and equipment existing in the periphery are blocked. Adverse effects can be prevented. The heat retaining unit casing 400 includes a press unit 402 and a press unit 404 on both sides. A support portion 406 is provided between the press portion 402 and the press portion 404.

  The support portion 406 has an arc-shaped holding surface that holds the superimposed substrate 420 on the top. The support surface extends in the left-right direction in FIG. 7, and the support unit 406 supports the plurality of superimposed substrates 420 in the vertical direction so that the bonding surface of the superimposed substrate 420 is vertical to the support surface. be able to. The support portion 406 is provided with a heater 446 therein, and can heat and keep the overlapping substrate 420 while holding the overlapping substrate 420. The heat retaining unit casing 400 has a double structure, the outer side is formed of a heat insulating material, and the inner side is provided with a heater around the superimposed substrate 420 held by the support unit 406. The structure which can be heated and kept warm may be sufficient.

  The press unit 402 and the press unit 404 have a pressure head 412 and a pressure head 414, respectively. As shown in FIG. 9, the pressure head 412 and the pressure head 414 have a columnar shape having a diameter larger than that of the superimposed substrate 420, and the arrows in FIG. 7 indicate that the press unit 402 and the press unit 404 are driven. Thus, it can move in the left-right direction. The pressure head 412 and the pressure head 414 can press a plurality of stacked substrates 420 held by the support portion 406 and arranged in series in a horizontal direction from both sides. The heat retaining unit housing 400 is formed of a highly rigid material for the purpose of preventing deformation due to the reaction force of the apparatus when the pressure head 412 and the pressure head 414 press the overlapping substrate 420. Further, the pressure head 412 and the pressure head 414 include a heater 442 and a heater 444, respectively, and can heat and keep the overlapping substrate 420 held by the support portion 406 from both the left and right sides.

  The transfer robot 430 transfers the superimposed substrate 420 inside the heat retaining unit 260. The transfer robot 430 can move laterally along a rail 436 provided on the ceiling of the heat retaining unit casing 400. The transfer robot 430 has an elevating mechanism, and can place the superimposed substrate 420 held by the vertical movement on the support portion 406 or lift the superimposed substrate 420 placed on the support portion 406.

  The transfer robot 430 includes a horizontal axis rotation mechanism 432. The transfer robot 430 can hold the superposed substrate 420 held vertically as shown by the solid line in FIG. 7 horizontally as shown by the broken line through the horizontal axis rotation mechanism 432. The transfer robot 430 can be rotated around the Z axis by a vertical axis rotation mechanism 434. Accordingly, the transfer robot 430 can arbitrarily change the orientation of the held overlapping substrate 420 through the horizontal axis rotation mechanism 432 and the vertical axis rotation mechanism 434. The transfer robot 430 delivers the superimposed substrate 420 to and from the robot arm 230, thereby loading the temporarily bonded superimposed substrate 420 and placing it on the support unit 406. Unload.

  FIG. 7 shows a process in which a new superimposed substrate 420 is carried into the heat retaining unit 260 on which a plurality of superimposed substrates 420 are already placed. The pressure head 414 is retracted to the left, leaving a space where a new overlapping substrate 420 can be placed, and the overlapping substrate 420 lowered and held by the transfer robot 430 is placed on the support unit 406. Thereafter, as indicated by the solid line arrow in FIG. 8, the pressure head 414 advances to the right, sandwiches the overlapping substrate 420 together with the pressure head 412, and pressurizes.

  In this manner, the heat retaining unit 260 can pressurize while keeping a plurality of stacked substrates 420 stacked at the same time. As shown in FIG. 7, the stacked substrates 420 transferred from the temperature raising unit 250 are loaded on the support unit 406 one after another from the left side. Therefore, in the row of the superimposed substrates 420, the superimposed substrates 420 are arranged in a long time toward the right side.

  The laminated substrate 422 that has been subjected to heat retention and pressurization for a predetermined time and is finally bonded is taken out from the right side of the support portion 406 and carried out. For example, when the laminated substrate 422 is taken out, as shown by the broken line arrows in FIG. 8, the pressure head 412 and the pressure head 414 stop the pressurization, and the pressure head 412 is slightly retracted in the right direction to be conveyed. The robot 430 takes out the rightmost laminated substrate 422 in the row of the superimposed substrates 420, transfers it to the robot arm 230, and carries it out. Then, the pressure head 414 advances in the right direction, fills an empty space, and presses with the overlapping substrate 420 remaining together with the pressure head 412 interposed therebetween.

  As described above, in the substrate bonding process, the heat retention and pressure that requires time is shared by the heat retaining unit 260, and the plurality of stacked substrates 420 are simultaneously retained and pressurized by the heat retaining unit 260. Therefore, the throughput of the entire process can be increased without increasing the temperature raising unit.

  FIG. 10 shows an embodiment of the heat retaining unit 260 using the heating member 460. The heat retaining unit 260 further includes a heating member 460 that is sandwiched between the superimposed substrates 420 when the superimposed substrates 420 are placed on the support unit 406. The heating member 460 can be heated and kept at a bonding temperature. By the heat insulation of the heating member 460 sandwiched between the overlapping substrates 420, the overlapping substrate 420 can be more stably and uniformly maintained.

  The heating member 460 may be, for example, a disk having the same or larger diameter as the superimposed substrate 420. The heating member 460 may be provided with a heater inside. As an example of the heater of the heating member 460, an electric heater provided with a heat wire may be used. A receiving electrode for the electric heater is provided on the side surface of the heating member 460, and a rail-like power supply electrode extending in the overlapping direction of the overlapping substrate 420 (left and right direction in FIG. 10) is provided on the support portion 406. Good. When the heating member 460 is placed on the support portion 406, the heating member 460 can be placed so that the power receiving electrode on the side surface is in contact with the power feeding electrode provided on the support portion 406 and can receive power. In addition, since the power receiving electrode can slide on the rail of the power feeding electrode of the support portion 406, the heating member 460 can maintain power reception even if it is moved left and right on the support portion 406 when being pressurized.

  In the above-described embodiment, the holder pair is disassembled by the temperature raising unit 250, and only the superposed substrate 420 is put into the heat retaining unit 260, but the holder pair is put into the heat retaining unit 260 as it is and kept warm and pressurized. May be. In the above-described embodiment, the first substrate 122 and the second substrate 123 are held and transported by the upper substrate holder 124 and the lower substrate holder 125, respectively, until the superimposed substrate 420 is temporarily bonded. The second substrate 123 may be directly transferred without using the upper substrate holder 124 and the lower substrate holder 125.

In the above-described embodiment, the heat retaining unit 260 horizontally presses the plurality of stacked substrates 420 arranged in the horizontal direction from both sides, and the heat retaining unit 260 moves the plurality of stacked substrates 420 aligned in the vertical direction up and down. It may have a structure in which it is sandwiched and pressurized. In addition, when the superposition substrate 420 temporarily joined in the temperature raising unit 250 can be completed even if it is not pressurized and kept warm, the heat retaining part 260 does not have a press part and keeps the heat. The superposed substrate 420 may be subjected to main bonding only by this. Further, N ₂ may be introduced into the heat retaining unit 260, and the laminated substrate 420 may be kept warm and pressurized in an N ₂ atmosphere. In this case, a load lock may be provided at the carry-in entrance of the heat retaining unit 260 instead of the shutter. Further, the heat retaining unit 260 retains the temperature of the superimposed substrate 420 before the completion of the main bonding or until a predetermined time after the completion of the completion, and even if the superimposed substrate 420 is subsequently unloaded from the heat retaining unit 260. Good.

  The heat retaining unit 260 may include a movable support unit instead of the fixed support unit 406. For example, the heat retaining unit 260 includes a heat retaining chamber that is maintained at the bonding temperature and a conveyor that passes through the heat retaining chamber. The overlapped substrate 420 is placed on the conveyor and passes through the heat retaining chamber in advance. It may have a structure in which heat is maintained for a predetermined time and the main joining can be completed. In this case, the conveyor may be a rotary type that rotates.

  FIG. 11 shows an outline of a manufacturing method for manufacturing a stacked semiconductor device. As shown in FIG. 11, the laminated semiconductor device is a base material for the laminated semiconductor device, Step S110 for designing the function / performance of the laminated semiconductor device, Step S120 for producing a mask (reticle) based on the design step. The substrate is manufactured through a step S130 for manufacturing a substrate, a substrate processing step S140 including lithography using a mask pattern, a device assembly step S150 including a substrate bonding process using the above-described substrate bonding apparatus, an inspection step S160, and the like. The device assembly step S150 includes processing processes such as a dicing process, a bonding process, and a package process following the substrate bonding process.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

  DESCRIPTION OF SYMBOLS 100 Substrate bonding apparatus, 102 Case, 104 Normal temperature part, 106 High temperature part, 108 Heat insulation wall, 112 Substrate cassette, 114 Substrate cassette, 116 Substrate cassette, 122 First substrate, 123 Second substrate, 124 Upper substrate holder, 125 Lower substrate holder, 126 Pre-aligner, 128 Substrate holder rack, 132 Robot arm, 134 Robot arm, 140 Stage device, 141 First stage, 142 Second stage, 145 Heat insulation wall, 146 Shutter, 148 Control unit, 164 Through hole, 165 Through-hole, 220 Load lock chamber, 222 Shutter, 224 Shutter, 230 Robot arm, 240 Heating unit, 250 Heating unit, 260 Heat retaining unit, 270 Cooling chamber, 300 Heat insulation chamber, 310 Upper stage, 312 Presser pin 314 Heater, 316 Cooling mechanism, 320 Lower stage, 322 Push-up pin, 324 Heater, 326 Cooling mechanism, 330 Lifting / lowering unit, 332 Piston, 334 Cylinder, 400 Thermal insulation unit housing, 402 Press unit, 404 Press unit, 406 Support unit 412 Pressure head, 414 Pressure head, 420 Stacked substrate, 422 Stacked substrate, 430 Transport robot, 432 Horizontal axis rotation mechanism, 434 Vertical axis rotation mechanism, 436 Rail, 442 Heater, 444 Heater, 446 Heater, 460 Heating Element

Claims (35)

A device for bonding a plurality of semiconductor substrates each having a circuit formed thereon,
An accommodating portion for accommodating a plurality of overlapping substrates each having the plurality of semiconductor substrates superimposed;
A bonding portion for bonding the plurality of semiconductor substrates of each of the plurality of superimposed substrates accommodated in the accommodating portion;
With
The accommodating portion holds a plurality of stacked substrates arranged in series,
The bonding unit is a substrate bonding apparatus that starts bonding of the other overlapping substrates before the bonding of at least one of the plurality of overlapping substrates is completed.   The substrate bonding apparatus according to claim 1, wherein the bonding unit includes a heating unit that heats the plurality of stacked substrates.   The substrate bonding apparatus according to claim 1, wherein the bonding unit includes a pressing unit that presses the plurality of stacked substrates in series.   The said bonding part is a board | substrate bonding apparatus as described in any one of Claim 1 to 3 which further has a heating member arrange | positioned between these several laminated substrates. A temporary bonding portion for temporarily bonding the plurality of semiconductor substrates of the superimposed substrate;
The said bonding part is a board | substrate bonding apparatus as described in any one of Claim 1 to 4 which joins these several overlapping substrates temporarily joined.   The substrate bonding apparatus according to claim 5, wherein the superimposed substrate is carried in at least the temporary bonding portion while being held by a substrate holder. The temporary bonding portion heats the superimposed substrate at a first temperature,
The substrate according to claim 5 or 6, wherein the bonding portion heats the overlapping substrate at a second temperature at which the substrates of the plurality of overlapping substrates heated by the temporary bonding portion are bonded to each other. Bonding device.   The substrate bonding apparatus according to claim 7, wherein a heating time in the temporary bonding portion is shorter than a heating time in the bonding portion.   The substrate bonding apparatus according to claim 8, wherein the first temperature and the second temperature are the same.   The said temporary joining part is a board | substrate bonding apparatus as described in any one of Claim 6 to 9 which has several temperature raising units which heat up the said overlapping board | substrate to different temperature, respectively.   The superposed substrate is inserted in order from a low temperature rising unit to a high temperature rising unit among the plurality of temperature rising units, and after being unloaded from the joint, the temperature is low from the high temperature rising unit. The board | substrate bonding apparatus of Claim 10 thrown in order toward the direction. A device for bonding a plurality of semiconductor substrates each having a circuit formed thereon,
A first heating unit that heats the stacked substrate including the plurality of stacked semiconductor substrates at a first temperature;
A second heating unit configured to serially heat a plurality of the stacked substrates heated by the first heating unit and to heat the stacked substrates at a second temperature;
A substrate bonding apparatus comprising:   The substrate bonding apparatus according to claim 12, wherein a heating time in the first heating unit is shorter than a heating time in the second heating unit.   The substrate bonding apparatus according to claim 13, wherein the first temperature and the second temperature are the same. A device for bonding a plurality of semiconductor substrates each having a circuit formed thereon,
A first heating unit that heats the stacked substrate having the plurality of stacked semiconductor substrates for a first time;
A second heating unit configured to heat a plurality of the stacked substrates heated by the first heating unit in series and heat for a second time longer than the first time;
A substrate bonding apparatus comprising: A device for bonding a plurality of semiconductor substrates each having a circuit formed thereon,
A bonding portion for bonding the plurality of semiconductor substrates of the overlapping substrate having the plurality of semiconductor substrates superimposed;
An accommodating portion for accommodating the plurality of superimposed substrates to which the plurality of semiconductor substrates are bonded;
A heating unit for heating the plurality of superimposed substrates housed in the housing unit;
With
The accommodating portion holds a plurality of stacked substrates arranged in series,
The heating unit is a substrate bonding apparatus that starts heating the other overlapping substrate before the heating of at least one of the plurality of overlapping substrates is completed.   A method for manufacturing a laminated semiconductor device, comprising: bonding a substrate with the substrate bonding apparatus according to claim 1.   A stacked semiconductor device manufactured by the method for manufacturing a stacked semiconductor device according to claim 17. A method of bonding a plurality of semiconductor substrates each having a circuit formed thereon,
An overlaying step of creating an overlay substrate by overlaying a plurality of semiconductor substrates;
A housing step of housing a plurality of the stacked substrates in a housing portion;
A bonding step of bonding the plurality of semiconductor substrates of each of the plurality of stacked substrates stored in the storage unit;
Including
The accommodating step holds the plurality of superimposed substrates in series,
The bonding step is a substrate bonding method in which the bonding of the other overlapping substrates is started before the bonding of at least one of the plurality of overlapping substrates is completed.   The substrate bonding method according to claim 19, wherein the bonding step includes a heating step of heating the plurality of stacked substrates.   The substrate bonding method according to claim 19 or 20, wherein the bonding step includes a pressing step of pressing the plurality of stacked substrates in series.   The substrate bonding method according to any one of claims 19 to 21, wherein the bonding step further includes a step of arranging a heating member between the plurality of overlapping substrates. A temporary bonding step of temporarily bonding the plurality of semiconductor substrates of the superimposed substrate;
The substrate bonding method according to any one of claims 19 to 22, wherein, in the bonding step, the plurality of temporarily bonded substrates are bonded. A holding step of holding the superimposed substrate on a substrate holder;
The substrate bonding method according to claim 23, wherein in the temporary bonding step, the plurality of semiconductor substrates of the superimposed substrate held by the substrate holder are bonded. Before the bonding step, including a separation step of separating the substrate holder and the overlapping substrate,
The substrate bonding method according to claim 24, wherein in the bonding step, the plurality of semiconductor substrates of the superimposed substrate separated from the substrate holder are bonded. In the temporary bonding step, the overlapping substrate is heated at a first temperature,
26. The substrate according to claim 23, wherein the bonding step heats the overlapping substrate at a second temperature at which the substrates of the plurality of overlapping substrates heated by the temporary bonding step are bonded to each other. Pasting method.   27. The substrate bonding method according to claim 26, wherein a heating time in the temporary bonding step is shorter than a heating time in the bonding step.   The substrate bonding method according to claim 27, wherein the first temperature and the second temperature are the same.   In the temporary bonding step, among the plurality of temperature rising units, the superposed substrate is put in order from a temperature rising unit having a low temperature to a temperature rising unit having a high temperature. 29. The substrate bonding method according to any one of claims 24 to 28, wherein the stacked substrates are introduced in order from the lowest. A method of bonding a plurality of semiconductor substrates each having a circuit formed thereon,
A first heating step of heating the stacked substrate having the plurality of semiconductor substrates stacked at a first temperature;
A second heating step in which a plurality of the stacked substrates heated in the first heating step are arranged in series and heated at a second temperature;
A substrate bonding method including:   The substrate bonding method according to claim 30, wherein a heating time in the first heating step is shorter than a heating time in the second heating step.   The substrate bonding method according to claim 31, wherein the first temperature and the second temperature are the same. A method of bonding a plurality of semiconductor substrates each having a circuit formed thereon,
A first heating step of heating the stacked substrate having the plurality of stacked semiconductor substrates for a first time;
A second heating step in which a plurality of the stacked substrates heated in the first heating step are arranged in series and heated for a second time longer than the first time;
A substrate bonding method including: A method of bonding a plurality of semiconductor substrates each having a circuit formed thereon,
A bonding step of bonding the plurality of semiconductor substrates of the overlapping substrate having the plurality of semiconductor substrates superimposed;
A housing step of housing a plurality of the stacked substrates to which the plurality of semiconductor substrates are bonded in a housing portion;
A heating step of heating the plurality of stacked substrates housed in the housing portion;
Including
The accommodating step holds the plurality of superimposed substrates in series,
The heating step is a substrate bonding method in which heating of the other overlapping substrate is started before the heating of at least one of the plurality of overlapping substrates is completed. A step of bonding the plurality of semiconductor substrates by the substrate bonding method according to any one of claims 19 to 34;
Dividing the stacked substrate on which the plurality of semiconductor substrates are bonded into a laminated semiconductor device;
A method for manufacturing a laminated semiconductor device comprising:

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