JP5333493B2 - Back-illuminated image sensor and imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image sensor having superior focus detection accuracy even if the miniaturization of pixels is progressed, a method of manufacturing the same, and an image pickup apparatus equipped with the same. <P>SOLUTION: A backside-irradiation-type image sensor includes a plurality of pixels disposed in a two-dimensional arrangement where the plurality of pixels include pixels 211 for focus detection in addition to pixels for image sensing. The pixels for image sensing and pixels 211 for focus detection are provided with a semiconductor layer 16 on the front side surface of which photoelectric conversion sections 15a are formed while the backside surface of which is defined as a light receiving surface, and provided with a wiring layer 17 which includes wiring for reading out signals from the photoelectric conversion sections 15a. The wiring layer 17 for the pixels for image sensing and that for the pixels for focus detection are formed on respective portions of the front side surface of the semiconductor layer 16. The pixels for image sensing are provided with color filters that pass the light of specific wavelength regions on the backside surface side of the semiconductor layer, while the pixels 211 for focus detection are provided with light shielding films 18 that cut off a part of the light incident on the backside surface of the semiconductor layer 16 in a layer that corresponds to the color filter for the pixels for image sensing. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a back-illuminated image sensor and an image pickup apparatus using the image sensor.

  A surface-illuminated imaging device having focus detection pixels together with imaging pixels is known as a conventional technique (for example, Patent Document 1).

JP 2000-305010 A

  In the conventional surface irradiation type imaging device as described in Patent Document 1, wiring for reading a signal from the photoelectric conversion unit, a color filter, and a light shielding layer must be formed between the macro lens and the light receiving unit. Therefore, the distance from the microlens to the light receiving unit becomes long (deep). For this reason, there is a problem that focus detection accuracy deteriorates as the pixels become finer.

According to the first aspect of the present invention, in the back-illuminated imaging device in which a plurality of pixels are arranged two-dimensionally, the plurality of pixels include a pixel for focus detection together with a pixel for imaging. The pixel and the focus detection pixel each include a semiconductor layer having a photoelectric conversion portion formed on one surface and a light receiving surface on the other surface, and a wiring layer having a wiring for reading a signal from the photoelectric conversion portion. The wiring layer of the imaging pixel and the wiring layer of the focus detection pixel are formed on the one surface side of each semiconductor layer, and the imaging pixel is a semiconductor layer of the imaging pixel. A color filter that transmits light in a specific wavelength range, and the focus detection pixel is formed on the other surface side of the focus detection pixel semiconductor layer, A light-shielding film that shields part of the incident light For example, said a spacing from the other surface of the semiconductor layer to the surface of the light shielding film is formed from the other surface distance between the semiconductor layer to a surface of the color filter is formed are the same It is characterized by.
The invention of claim 6 is a back-illuminated image sensor having imaging pixels for imaging a subject image and focus detection pixels for calculating a defocus amount, wherein the imaging pixels are first An imaging semiconductor layer having a surface and a second surface opposite to the first surface, and including an imaging photoelectric conversion unit between the first surface and the second surface; and the imaging semiconductor layer An imaging wiring layer formed on the second surface side with respect to the first surface of the imaging and having an imaging wiring for reading a signal output from the imaging photoelectric conversion unit; and the first of the imaging semiconductor layer A color filter that is formed on a surface and transmits light in a specific wavelength range, and the focus detection pixel has a third surface and a fourth surface opposite to the third surface, A focus detection semiconductor layer including a focus detection photoelectric conversion unit between the third surface and the fourth surface; and the focus detection semiconductor A focus detection wiring layer formed on the fourth surface side with respect to the third surface of the layer and having a focus detection wiring for reading a signal output from the focus detection photoelectric conversion unit; and the focus detection semiconductor A light-shielding film that is formed on the third surface of the layer and shields a part of the light incident on the focus detection photoelectric conversion unit, from the first surface to the surface on which the color filter is formed The interval and the interval from the third surface to the surface on which the light shielding film is formed are the same.

  According to the present invention, since the distance from the microlens to the photoelectric conversion unit can be shortened, the focus detection accuracy can be improved.

It is a figure which shows the structure of the electronic camera of one embodiment. It is a figure which shows the focus detection area | region on the imaging screen set to the scheduled image formation surface of an interchangeable lens. It is a figure which shows the Bayer arrangement | sequence of a color filter. It is a figure which shows the detailed structure of an image pick-up element. It is a figure which shows the structure of an imaging pixel. It is a figure which shows the structure of a focus detection pixel. It is a figure for demonstrating the focus detection method by a pupil division system. It is a figure which shows the basic pixel structure of an image pick-up element. It is a figure for demonstrating the wiring contained in one pixel. It is a figure which shows the wiring of a wiring layer. It is a figure for demonstrating the manufacturing method of an image pick-up element. It is a figure for demonstrating the manufacturing method of an image pick-up element. It is a figure for demonstrating the manufacturing method of an image pick-up element.

  An embodiment in which the present invention is applied to an electronic camera as an imaging apparatus will be described. FIG. 1 is a diagram illustrating a configuration of an electronic camera according to an embodiment. An electronic camera 101 according to an embodiment includes an interchangeable lens 102 and a camera body 103, and the interchangeable lens 102 is attached to a mount portion 104 of the camera body 103.

  The interchangeable lens 102 includes lenses 105 to 107, a diaphragm 108, a lens drive control device 109, and the like. The lens 106 is for zooming, and the lens 107 is for focusing. The lens drive control device 109 includes a CPU and its peripheral components, and performs drive control of the focusing lens 107 and the diaphragm 108. Further, the lens drive control device 109 detects the positions of the zooming lens 106, the focusing lens 107, and the aperture 108, and transmits lens information and receives camera information by communication with the control device of the camera body 103. .

  On the other hand, the camera body 103 includes an image sensor 111, a camera drive control device 112, a memory card 113, an LCD driver 114, an LCD 115, an eyepiece lens 116, and the like. The image sensor 111 is disposed on the planned image plane (planned focal plane) of the interchangeable lens 102, captures the subject image formed by the interchangeable lens 102, and outputs an image signal. An imaging pixel (hereinafter simply referred to as an imaging pixel) is two-dimensionally arranged in the imaging element 111, and a portion corresponding to the focus detection position in the imaging element 111 is replaced with an imaging pixel (hereinafter referred to as a focus detection pixel). A column (simply called focus detection pixels) is incorporated.

  The camera drive control device 112 includes a CPU and its peripheral components, and controls the drive of the image sensor 111, processing of the captured image, focus detection and focus adjustment of the interchangeable lens 102, control of the aperture 108, display control of the LCD 115, lens drive control. Communication with the apparatus 109, sequence control of the entire camera, and the like are performed. The camera drive control device 112 communicates with the lens drive control device 109 via an electrical contact 117 provided on the mount unit 104.

  The memory card 113 is an image storage that stores captured images. The LCD 115 is used as a display of a liquid crystal viewfinder (EVF: electronic viewfinder), and a photographer can visually recognize a captured image displayed on the LCD 115 via an eyepiece lens 116.

  The subject image formed on the image sensor 111 through the interchangeable lens 102 is photoelectrically converted by the image sensor 111, and the image output is sent to the camera drive control device 112. The camera drive control device 112 calculates the defocus amount at the focus detection position based on the output of the focus detection pixel, and sends this defocus amount to the lens drive control device 109. In addition, the camera drive control device 112 sends an image signal generated based on the output of the imaging pixel to the LCD driver 114 and displays it on the LCD 115 and also stores it in the memory card 113.

  The lens drive control device 109 detects the positions of the zooming lens 106, the focusing lens 107, and the diaphragm 108, and calculates lens information based on the detected positions, or a lens corresponding to the detected position from a lookup table prepared in advance. Information is selected and sent to the camera drive controller 112. The lens drive control device 109 calculates a lens drive amount based on the defocus amount received from the camera drive control device 112, and drives and controls the focusing lens 107 based on the lens drive amount.

  The image sensor 111 is a back-illuminated 4TR-CMOS (Complementary Metal Oxide Semiconductor) sensor. The 4TR-CMOS sensor includes a photoelectric conversion unit and four transistors including a transfer gate transistor, a source follower transistor, a row selection transistor, and a reset transistor. Details will be described later.

  FIG. 2 shows a focus detection area on the imaging screen G set on the planned imaging plane of the interchangeable lens 102. The focus detection areas G1 to G5 are set on the imaging screen G, and the focus detection pixels of the imaging element 111 are linearly arranged in the longitudinal direction of the focus detection areas G1 to G5 on the imaging screen G. That is, the focus detection pixel row on the image sensor 111 samples the images of the focus detection areas G1 to G5 in the subject image formed on the shooting screen G. The photographer manually selects an arbitrary focus detection area from the focus detection areas G1 to G5 according to the shooting composition.

  FIG. 3 shows an arrangement of color filters installed in the image sensor 211. A Bayer array color filter shown in FIG. 3 is installed on the imaging pixels arranged in a two-dimensional array on the substrate of the imaging element 111. 3 shows an arrangement of color filters for four pixels (2 × 2) of image pickup pixels. An image pickup pixel unit having the color filter arrangement for four pixels is two-dimensionally developed on the image pickup device 111. To do. In the Bayer array, two pixels having a G (green) filter are arranged at diagonal positions, and a pair of pixels having a B (blue) filter and an R (red) filter are arranged at diagonal positions orthogonal to the G filter pixels. Be placed. Therefore, in the Bayer array, the density of green pixels is higher than the density of red pixels and blue pixels.

  FIG. 4 is a front view showing a detailed configuration of the image sensor 111. FIG. 4 is an enlarged view of the periphery of one focus detection area on the image sensor 111. The image pickup device 111 includes an image pickup pixel 210 and a focus detection pixel 211 for focus detection.

  FIG. 5A is a front view of the imaging pixel 210. FIG.5 (b) is AA sectional drawing of Fig.5 (a). The imaging pixel 210 includes a microlens 10, a microlens fixing layer 11, a color filter 12, a planarization layer 13, a semiconductor layer 16, and a wiring layer 17. On one surface of the semiconductor layer 16, a photoelectric conversion unit 15a and a channel stop unit 15b are formed.

  The microlens 10 collects the light that has reached the surface of the imaging pixel 210 and applies it to the photoelectric conversion unit 15a. The microlens fixing layer 11 fixes the microlens 10 to the color filter 12. The color filter 12 is a resin layer that transmits light in a specific wavelength range. The planarization layer 13 is a layer for planarizing the surface after forming the color filter 12 after the support substrate 60 is removed in a manufacturing process described later (see FIG. 12A).

  The photoelectric conversion unit 15a photoelectrically converts the reached light and accumulates signal charges. The channel stop unit 15b is formed at a boundary portion between the two imaging pixels 210, and prevents signal charges generated in the photoelectric conversion unit 15a from entering the surrounding pixels. The wiring layer 17 includes wirings such as a signal output line, a power supply line, a reset control line, a transfer gate control line, and a row selection control line, which will be described later. Details of the wiring will be described later.

  FIG. 6A is a front view of the focus detection pixel 211. FIG.6 (b) is BB sectional drawing of Fig.6 (a). The focus detection pixel 211 includes the microlens 10, the microlens fixing layer 11, the light shielding film 18, the planarization layer 13, the semiconductor layer 16, and the wiring layer 17. On one surface of the semiconductor layer 16, a photoelectric conversion unit 15a and a channel stop unit 15b are formed. The microlens 10, the microlens fixing layer 11, the planarization layer 13, the photoelectric conversion unit 15 a, the channel stop unit 15 b, and the wiring layer 17 have the same functions as the imaging pixel 210, and thus the description thereof is omitted.

  The light shielding film 18 is formed so as to open to the right half or the left half of the photoelectric conversion unit 15a shown in FIG. The focus detection pixels 211a in which light enters the right half of the photoelectric conversion unit 15a and the focus detection pixels 211b in which light enters the left half of the photoelectric conversion unit 15a are alternately arranged. The defocus amount is calculated by comparing the output distribution of the focus detection pixel 211a with the output distribution of the focus detection pixel 211b.

  Next, the focus detection method will be described with reference to FIG. In the embodiment of the present invention, the focus is detected by a so-called pupil division method. FIG. 7 is a diagram illustrating an output distribution of the focus detection pixel 211 when the interchangeable lens 102 is out of focus. A curve 21 is a curve showing the output distribution of the focus detection pixel 211a. A curve 22 is a curve showing the output distribution of the focus detection pixel 211b. The focus detection pixels 211a and the focus detection pixels 211b are alternately arranged. Since the curve 21 is shifted to the right side of the curve 22, it can be seen that the position of the focus detection pixel 211 is the rear pin.

  By multiplying the image shift amount of the two output distributions 21 and 22 by a predetermined conversion coefficient, the current image plane relative to the planned image plane (the focus detection position corresponding to the position of the microlens 10 on the planned image plane) The deviation (defocus amount) of the imaging plane) can be calculated. When the interchangeable lens 102 is in focus, the curve 21 and the curve 22 coincide.

The basic pixel configuration of the image sensor 111 will be described with reference to FIG. As described above, the imaging device 111 is a back-illuminated 4TR-CMOS sensor, and the basic pixel 300 includes the photoelectric conversion unit 33, the charge-voltage conversion unit 34, the transfer gate transistor 32, the source follower transistor 35, the row. The selection transistor 36 and the reset transistor 31 are four transistors. The basic pixel 300 is connected to the signal output line V _OUT , the power supply line Vdd, the reset control line φR, the transfer gate control line φTG, and the row selection control line φRS.

  The reset transistor 31 resets the charge-voltage converter 34 to the initial potential. The transfer gate transistor 32 transfers the photoelectrically converted signal charge to the charge / voltage converter 34. The photoelectric conversion unit 33 photoelectrically converts the light that has arrived as described above, and accumulates signal charges. The charge-voltage converter 34 is a stray capacitance that converts a signal charge into a potential, and this stray capacitance is generated by a diode that functions as a capacitor. The source follower transistor 35 amplifies the potential change of the charge-voltage conversion unit 34 due to the accumulated charge. The row selection transistor 36 performs switching for selecting the basic pixel 300 to which a signal is transferred.

The signal output line _VOUT is a wiring for transferring a signal output from the basic pixel 300 and is connected to the drain of the row selection transistor 36. The power supply line Vdd is a wiring that supplies power for amplifying the potential change of the charge-voltage conversion unit 34 and is connected to the source of the reset transistor 31. The reset control line φR is a wiring for controlling on / off of the reset transistor 31 and is connected to the gate of the reset transistor 31. The transfer gate control line φTG is a wiring for controlling the transfer of signal charges to the charge-voltage converter 34 and is connected to the gate of the transfer gate transistor 32. The row selection control line φRS is a wiring for controlling on / off of the row selection transistor 36 and is connected to the gate of the row selection transistor 36.

With reference to FIG. 9, a wiring included in one pixel will be described. As shown in FIG. 9, the image sensor 111 includes a signal output line V _OUT , a power supply line Vdd, a reset control line φR, a transfer gate control line φTG, and a row selection control line φRS in one row of pixels arranged in parallel. There are two each, and each column has four signal output lines _VOUT . Thereby, the signals of the plurality of basic pixels 300 can be read at a time, and the detection speed of the image sensor 111 can be increased. Accordingly, the wiring included in one pixel 51 indicated by a dotted line in FIG. 9 includes, in addition to the wiring connected to the basic pixel 300, the basic pixel 300 of another pixel that is not connected to the basic pixel 300. Wiring to connect to is also included. For this reason, the number of wirings included in one pixel increases.

The wiring in the wiring layer 17 of the image sensor 111 will be described with reference to FIG. FIG. 10A is a plan view when the wiring of the wiring layer 17 is viewed from the microlens 10 side. FIG.10 (b) is CC sectional drawing of Fig.10 (a). As shown in FIGS. 10A and 10B, the wiring of the wiring layer is formed in a lattice shape over three layers. As viewed from the photoelectric conversion unit 15a, four signal output lines _VOUT and two bias lines Vb are formed in the first layer, and two power supply lines Vdd and 2 are formed in the second layer. A reset control line φR is formed. In the third layer, two transfer gate control lines φTG and two row selection control lines φRS are formed. The bias line Vb is formed to prevent interference.

  As shown in FIG. 10B, the wiring layer 17 is formed on the opposite side of the light incident side with respect to the photoelectric conversion unit 15a, so that it is not subject to the restriction (constraint) of the position of the photoelectric conversion unit 15a. Wiring can be freely formed. That is, in the present embodiment, the wiring can be formed also in a region overlapping the projection when the light receiving region of the photoelectric conversion unit 15a is projected from the light receiving surface side of the image sensor 111. On the other hand, when the imaging device is a surface irradiation type, since the wiring layer is formed on the light incident side with respect to the photoelectric conversion unit 15a, it is necessary to form a wiring so as not to overlap the light receiving region of the photoelectric conversion unit. .

  In the present embodiment, since the wiring layer 17 of the image sensor 111 is not limited by the position of the photoelectric conversion unit 15a, the line width of the wiring can be widened to increase the signal transmission efficiency.

  Next, with reference to FIGS. 11-13, the manufacturing method of the image pick-up element 111 in embodiment of this invention is demonstrated. FIGS. 11 to 13 show the focus detection pixel 211 in the image sensor 111 in particular.

  As shown in FIG. 11A, a P-type epitaxial layer 61 is formed on a semiconductor substrate 60, a diffusion layer is formed on the surface of the P-type epitaxial layer 61, and a photoelectric conversion unit 15a, a channel stop unit 15b, Another element (not shown) constituting a transistor or the like is formed. This P-type epitaxial layer 61 corresponds to the semiconductor layer 16. Next, as shown in FIG. 11B, the formation of the silicon oxide film by CVD and the formation of the Al wiring by sputtering are repeated to form the wiring layer 17 on the P-type epitaxial layer 61. Then, as shown in FIG. 11C, a support substrate 62 is bonded on the wiring layer 17.

  As shown in FIG. 12A, the semiconductor substrate 60 is removed by etching. Next, as shown in FIG. 12B, in order to flatten the removal surface of the semiconductor substrate 60, a resin for forming the planarization layer 13 is uniformly applied to the semiconductor substrate removal surface, and then the resin is applied and applied. The light-shielding film 18 and the color filter (not shown) are formed by repeating the steps of drying the resin, exposing the pattern, and developing the resin. The light shielding film 18 is obtained by dispersing a black pigment such as titanium black or carbon black in a resin, or coloring a resin with a black dye. A color filter (not shown) is obtained by dispersing a pigment corresponding to each color (for example, R, G, B) in a resin or coloring a resin with a dye corresponding to each color (for example, R, G, B). Is.

  As shown in FIG. 13A, a resin for forming the microlens fixing layer 11 is applied on the light-shielding film 18 and a color filter (not shown), and then a resin for forming the microlens 10 is applied to the well-known lithography. The microlens base 63 is formed by patterning in a desired shape. Next, as shown in FIG. 13B, the microlens base 63 is heat-formed into a hemispherical shape using a hot plate or the like to form the microlens 10. Then, the support substrate 62 is removed, and the image sensor 111 is completed.

  In the imaging device, the microlens fixing layer 11 and the planarization layer 13 may be omitted as long as the microlens 10, the color filter 12, and the light shielding film 18 can be formed.

According to the embodiment described above, the following operational effects can be obtained.
(1) The imaging pixel 210 and the focus detection pixel 211 have the semiconductor layer 16 having the photoelectric conversion portion 15a on one surface and the other surface as a light receiving surface, and wiring for reading a signal from the photoelectric conversion portion 15a. The wiring layer 17 of the imaging pixel 210 and the wiring layer 17 of the focus detection pixel 211 are formed on one surface side of each semiconductor layer 16, and the imaging pixel 210 is the other side of the semiconductor layer 16. A color filter 12 that transmits light in a specific wavelength region is provided on the surface side, and the focus detection pixel 211 is configured to transmit light incident on the other surface of the semiconductor layer 16 to a layer corresponding to the color filter 12 of the imaging pixel 210. A light-shielding film 18 that shields a part is provided. As a result, a wiring for reading a signal from the photoelectric conversion unit is not formed between the macro lens 10 and the photoelectric conversion unit 15a, and the light shielding film 18 is not formed to overlap the color filter 12. The distance from the microlens 10 to the photoelectric conversion unit 15a can be shortened (shallow), and the focus detection accuracy can be improved.

(2) A material obtained by dispersing a black pigment such as titanium black or carbon black in a resin, or a material obtained by coloring a resin with a black dye was used as the material of the light shielding film 18. Thereby, reflection of incident light by the light shielding film 18 can be suppressed.

(3) A material in which a black pigment such as titanium black or carbon black is dispersed in a resin, or a resin obtained by coloring a resin with a black dye is used as a material for the light shielding film 18, and each color (for example, R, G, A material in which a pigment corresponding to B) is dispersed in a resin or a resin colored with a dye corresponding to each color (for example, R, G, B) was used as the material of the color filter 12. Since both are resin materials, the light shielding film 18 can be conveniently formed by a method similar to the method of forming the color filter 12. For example, the light shielding film 18 can be formed in the same manner as the color filter 12 by repeating the steps of resin application, drying of the applied resin, pattern exposure, and development processing. Further, when the light shielding film 18 is manufactured by the same method as that for the color filter 12, the control of the film thickness of the light shielding film 18 is easy, and thus the input characteristics can be adjusted. Furthermore, since the light-shielding film 18 that shields part of incident light is provided in the layer corresponding to the color filter 12 of the imaging pixel 210, the light-shielding film 18 can be formed in the process of forming the color filter 12, which is convenient. is there.

(4) A P-type epitaxial layer 61 is formed on the surface of the semiconductor substrate 60, a photoelectric conversion unit 15a is formed on the surface of the P-type epitaxial layer 61, a wiring layer 17 is formed on the photoelectric conversion unit 15a, and a P-type epitaxial layer is formed. The semiconductor substrate 60 is removed from the layer 61, the light shielding film 18 and the color filter 12 are formed on the surface of the P-type epitaxial layer 61 from which the semiconductor substrate 60 is removed, and the microlens 10 is formed on the light shielding film 18 and the color filter 12. The image pickup device 111 is manufactured by forming the above. Thereby, since the light shielding film 18 and the color filter 12 are formed in one process, the image sensor 111 can be manufactured efficiently.

(5) The focus detection pixel 211 does not read out the signal from the photoelectric conversion unit 15 a, and includes a wiring for reading out the signal from the photoelectric conversion unit in another pixel on one surface side of the semiconductor layer 16. Thereby, wiring can be formed so as to read out signals of the plurality of basic pixels 300 at a time, and the detection speed of the image sensor 111 can be increased.

(6) The wiring overlaps with the projection when the light receiving area of the photoelectric conversion unit 15a is projected from the light receiving surface side of the image sensor 111. As a result, a large number of wirings can be formed in the focus detection pixel 211 or the width of the wiring can be increased without increasing the number of wiring layers. On the other hand, when the imaging device is a front-illuminated type, it is necessary to form wiring so as not to overlap with the light receiving region of the photoelectric conversion unit. Therefore, when many wirings are formed, the number of wiring layers increases, The width may not be increased.

The above embodiment can be modified as follows.
(1) The thickness of the light shielding film 18 may be different from the thickness of the color filter 12. Thereby, the focus position of the focus detection pixel 211 can be adjusted.

(2) The position of the light shielding film 18 may be shifted from the position of the color filter 12 in the thickness direction of the image sensor 111. Thereby, the focus position of the focus detection pixel 211 can be adjusted.

(3) Although the number of wiring layers in the wiring layer 17 is three in the above embodiment, the number of wiring layers is not limited to three. For example, the number of wiring layers of the wiring layer 17 may be increased up to 10 to increase the number of pixels that can be read or controlled simultaneously. Unlike the front-illuminated image sensor, the distance between the microlens 10 and the photoelectric conversion unit 15a does not increase even if the number of wiring layers is increased. In addition, the number of wiring layers in the wiring layer 17 may be reduced to two to limit the function and reduce the manufacturing cost.

(4) Light shielding is achieved by dispersing all the pigments corresponding to R, G, and B of the color filter 12 in the resin, or coloring the resin using all the dyes corresponding to R, G, and B of each color filter. It may be used as a material for the film 18. Alternatively, the light shielding film 18 may be formed by stacking R color filters, G color filters, and B color filters.

(5) The image sensor 111 is a 4TR-CMOS sensor. However, the image sensor 111 is not limited to a 4TR-CMOS sensor as long as it is a back-illuminated image sensor. For example, another CMOS sensor or a CCD (Charge Coupled Device) may be used.

  It is also possible to combine one or a plurality of embodiments and modifications. It is possible to combine the modified examples in any way.

  The above description is merely an example, and the present invention is not limited to the configuration of the above embodiment.

DESCRIPTION OF SYMBOLS 10 Micro lens 11 Micro lens fixed layer 12 Color filter 13 Flattening layer 15a, 33 Photoelectric conversion part 15b Channel stop part 16 Semiconductor layer 17 Wiring layer 18 Light shielding film 31 Reset transistor 32 Transfer gate transistor 34 Charge voltage conversion part 35 Source follower Transistor 36 Row selection transistor 60 Semiconductor substrate 61 P-type epitaxial layer 62 Support substrate 101 Electronic camera 102 Interchangeable lens 111 Imaging element 210 Imaging pixels 211, 211a, 211b Focus detection pixel 300 Basic pixel

Claims (10)

In the backside-illuminated image sensor in which a plurality of pixels are arranged two-dimensionally,
The plurality of pixels include pixels for focus detection together with pixels for imaging,
The imaging pixel and the focus detection pixel each include a semiconductor layer having a photoelectric conversion portion formed on one surface and a light receiving surface on the other surface, and a wiring for reading a signal from the photoelectric conversion portion With layers,
The wiring layer of the imaging pixel and the wiring layer of the focus detection pixel are formed on the one surface side of each semiconductor layer,
The imaging pixel includes a color filter that is formed on the other surface side of the semiconductor layer of the imaging pixel and transmits light of a specific wavelength range.
The focus detection pixel includes a light shielding film that is formed on the other surface side of the semiconductor layer of the focus detection pixel and shields a part of incident light.
The distance from the other surface of the semiconductor layer to the surface on which the color filter is formed and the distance from the other surface of the semiconductor layer to the surface on which the light shielding film is formed are the same. A back-illuminated image sensor. In the backside illuminated image sensor according to claim 1,
The back-illuminated image sensor , wherein the thickness of the light shielding film is different from the thickness of the color filter. In the backside illumination type imaging device according to claim 1 or 2,
The focus detection pixel includes a wiring for reading a signal from the photoelectric conversion unit on the one surface side of the semiconductor layer, and a wiring for reading a signal from the photoelectric conversion unit in an adjacent focus detection pixel. A back-illuminated image pickup device comprising: In the back side illumination type image sensor according to any one of claims 1 to 3,
The backside-illuminated image sensor, wherein the wiring overlaps with a projection when a light-receiving region of the photoelectric conversion unit is projected from the light-receiving surface side of the backside-illuminated image sensor.   An imaging apparatus comprising the backside illumination type imaging device according to any one of claims 1 to 4. A back-illuminated imaging device having imaging pixels for imaging a subject image and focus detection pixels for calculating a defocus amount,
  The imaging pixel has a first surface and a second surface opposite to the first surface, and includes an imaging photoelectric conversion unit between the first surface and the second surface. An imaging wiring layer having an imaging wiring that is formed on the second surface side with respect to the first surface of the imaging semiconductor layer and reads a signal output from the imaging photoelectric conversion unit; A color filter that is formed on the first surface of the imaging semiconductor layer and transmits light in a specific wavelength range; and
  The focus detection pixel has a third surface and a fourth surface opposite to the third surface, and includes a focus detection photoelectric conversion unit between the third surface and the fourth surface. A focus having a detection semiconductor layer and a focus detection wiring which is formed on the fourth surface side with respect to the third surface of the focus detection semiconductor layer and reads a signal output from the focus detection photoelectric conversion unit. A detection wiring layer; and a light-shielding film that is formed on the third surface of the focus detection semiconductor layer and shields part of the light incident on the focus detection photoelectric conversion unit,
  The back-illuminated image sensor, wherein an interval from the first surface to the surface on which the color filter is formed and an interval from the third surface to the surface on which the light shielding film is formed are the same. The back-illuminated image sensor according to claim 6,
  The back-illuminated image sensor, wherein the thickness of the light shielding film is different from the thickness of the color filter. In the backside illumination type imaging device according to claim 6 or 7,
  The imaging pixel and the focus detection pixel are arranged adjacent to each other,
  The back-illuminated image sensor, wherein the focus detection wiring layer further includes the imaging wiring. The back-illuminated image sensor according to claim 8,
  The focus detection wiring and the imaging wiring overlap a projection when the focus detection photoelectric conversion unit is projected from the third surface side of the focus detection semiconductor layer. . An imaging apparatus comprising the backside illumination type imaging device according to any one of claims 6 to 9.

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